The invention relates to the technical field of
semiconductor photoetching, and discloses a super-resolution photoetching and guided self-
assembly-based graphic structure preparation method, which comprises the following steps of: S1, forming a guide layer, a reflective
metal layer and a photosensitive film layer which are sequentially stacked on a substrate; s2, exposing and developing the photosensitive film layer by adopting super-resolution photoetching equipment, and forming a photoetching pattern on the photosensitive film layer; s3, the reflective
metal layer and the guide layer are sequentially etched to the upper surface of the substrate, and the photoetching pattern is transmitted to the guide layer; s4, taking the photoetching pattern as a guide structure, and
coating a molecular
brush material in a groove of the guide structure to form an affinity
polymer layer; s5, the groove of the guide structure is internally coated with a block
copolymer, and after annealing, guide self-
assembly is conducted to form a block
copolymer layer; and S6, selectively removing part of the
polymer block region to obtain a graphic structure. According to the method, a super-resolution photoetching process is combined with guided self-
assembly of the block
copolymer, so that higher process expansion is realized, and a graphic structure with the resolution within 20nm is obtained.