39 results about "Single electron" patented technology

The invention relates to a quantum chemistry Hamiltonian rapid generation method and device based on a stability sub-table, and the method comprises the steps: obtaining a single electron integral item, a double electron integral item and a nuclear energy item of a target Fermi Hamiltonian, and storing the nuclear energy item; dividing the equal double-electron integrals into the same calculation object class, and deleting double-electron integral items corresponding to the double-electron integrals of which the absolute values are smaller than a threshold value; converting the single-electron integral item and the double-electron integral item into a Bose Hamiltonian expression form; filling the stable sub-form table based on all Fouli items to obtain a Fouli check matrix, and recording a coefficient vector; the same row vectors in the Follicle check matrix are merged, the Follicle coefficients corresponding to the merged row vectors are added, and the row vectors with the Follicle coefficients being 0 are deleted; and storing the Follicle check matrix and the coefficient vector. According to the technical scheme, the efficiency of converting the Fermi Hamiltonian into the Bose Hamiltonian can be improved.

The invention discloses a quantum capacitor system based on a single electron tunneling pump technology and an implementation method, relates to the technical field of quantum precision measurement, and solves the problems that in the prior art, geometric dependence cannot be gotten rid of, and a dynamic closed-loop and wide-range electronic capacitor cannot be realized. A Josephson quantum voltage standard and a single-electron tunneling pump technology are cooperatively fused, the single-electron tunneling pump, a frequency synchronization and control module, a differential current detection module and a capacitance coupling and feedback control module are included, quantization voltage reference is utilized, and high-sensitivity quantization current detection is carried out, so that the single-electron tunneling pump is obtained. Double breakthrough of absolute precision and dynamic response of capacitance measurement is achieved, direct quantization calibration of the real object carrier capacitance is achieved, and the method has the advantages of being high in measurement accuracy, high in calibration speed and the like. In conclusion, the capacitance can be converted from'geometric quantity depending on absolute length measurement 'into'quantum calculable quantity generated by basic constants', and the electrical precision bottleneck restricting quantum science and technology development is solved.

The application discloses a synthesis method of 1-chlorobenzo[4,5]thieno[2,3-c]pyridine, and relates to the technical field of preparation of heterocyclic organic compounds containing thiophene and pyridine; the application comprises the following steps: taking 5-bromo-2-chloropyridine and phenylboronic acid as raw materials, and preparing 2-chloro-5-phenylpyridine intermediate product through Suzuki coupling; adding sulfur as a cyclization thiophene raw material; under electrocatalysis conditions, sulfur is solidified through nucleophilic addition, sulfur free radicals are generated through single electron transfer, and the cyclization thiophene synthesis under mild conditions is completed; 1-chlorobenzo[4,5]thieno[2,3-c]pyridine is obtained by separating the crude product; the raw materials are cheap and easy to obtain, the cost is low, the reaction process is simple and easy to operate, the reaction period is simplified, the reaction condition is mild, the three wastes are less, the product yield is good, and the method is suitable for large-scale production.

A method for determining a performance parameter of an electron multiplier (e.g. parameter indicative of gain) comprises comparing an electron flux of a first electron emissive surface with an electron flux of a second electron emissive surface, or of an electron collector. The electron emissive surfaces form part of an electron multiplication chain, and may be discrete dynodes or provided by a single electron emission surface (e.g. a channel of a channel electron multiplier, or a plate of a microchannel plate electron multiplier). The first electron emissive surface may be earlier in the chain and less susceptible to electron flux-mediated gain degradation. A current ratio from the two electron emissive surfaces may be determined and compared with a comparator. An operating parameter (e.g. voltage bias) of the electron multiplier may be altered based on the determined performance parameter or current ratio. The invention may obviate or reduces the need for manual gain adjustment by adjusting the gain continuously and automatically to account for gain instability based on the comparison.

This invention provides a quantum current combined measurement device and method based on high-precision vacuum pressure control. The device includes: a vacuum chamber; a vacuum pump connected to the vacuum chamber; a vacuum pressure control component connected to the vacuum chamber; a high-current measurement component disposed within the high-current chamber; and a low-current measurement component disposed within the vacuum chamber. This invention regulates the vacuum level within the vacuum chamber through the vacuum pressure control component. When measuring extremely weak currents in a single electron stage, the vacuum level is reduced, and the signal is guided and collected by the low-current measurement component, enabling signal ion multiplication detection. When the current increases to the nanoampere level or above, the vacuum level is increased, switching to the high-current measurement component for direct charge collection measurement. This quantum current combined measurement device uses vacuum level as a key control variable, integrating the high sensitivity of the low-current measurement component to weak signals with the high-precision measurement capability of the high-current measurement component to strong signals into a single system.

The invention relates to a cross-scale electron microscope image generation method and a cross-scale electron microscope image generation system based on deep learning, and provides a solution scheme based on low-definition video shooting, video frame extraction, image reconstruction and image splicing, and the solution scheme is named as a cross-scale electron microscope image generation system (CEMIGS). The automation degree of electron microscope image shooting is improved through the video shooting mode, and complicated manual operation such as sample moving and focusing is omitted. The image super-resolution mode greatly improves the acquisition efficiency of the high-definition image. The problem of limited electron microscope representation range is solved by image splicing. Through the cross-scale electron microscope image, on one hand, the problem that the representation range of a single electron microscope image is limited can be solved, and on the other hand, the cross-scale information carried by the cross-scale image provides a new tool for research on the microstructure and properties of the material. The invention focuses on scanning electron microscopes and material images, and can also be applied to other types of microscopes and other scientific fields.

The invention relates to the field of semiconductor technology and manufacturing. According to the method for preparing the single-electron transistor by utilizing island-junction nanowire growth regulation and control, the defect that the preparation of the existing single-electron transistor needs to depend on high-precision photoetching and a complex semiconductor processing technology is overcome, and a self-localized island-junction structure is directly formed in the nanowire growth process; the island region can serve as a quantum dot, the junction part can serve as a stable tunneling potential barrier, island-junction accurate positioning growth is achieved, plane array layout can be formed on the surface of the wafer, and the effect is difficult to achieve in a traditional spontaneous growth system.

The application relates to an axially tuned time-sharing work type double-waveband coaxial transit time oscillator, which comprises a cathode, a cathode seat, an inner conductor, an outer first conductor, an outer second conductor, an axially movable conductor, an outer third conductor, a first microwave output port and a second microwave output port, and the whole structure is rotationally symmetrical about a central axis OO'; the application adjusts and tunes the conductor section in an axial direction, so that the beam-wave interaction cavity is axially relatively misaligned, the electric field distribution of the intrinsic mode in the resonant cavity is changed, the time-sharing switching and high-efficiency output of the double waveband are stably realized, the resonant cavity is axially cascaded in the structural design, under the drive of a single electron beam, the time-sharing output of the double-waveband high-power microwave is stably realized in cooperation with the axial tuning mechanism, and compared with the traditional double-electron-beam nested structure, the radial size of the device is effectively reduced, and the miniaturization and integration of the device are more facilitated.

A silicon-based quantum processor is disclosed comprising a plurality of unit cells having respective qudits that can interact with one another, directly or indirectly. Each unit cell comprises a charge reservoir (101) and a plurality of single-electron boxes, SEBs, (103a,b,c,d) that are gated charged islands separated from the charge reservoir by a tunnel barrier. A first plurality of qudits for use as ancilla qudits (105a,b) are provided around each SEB. A second plurality of qudits (107a,b) for use as data qudits are provided around the first plurality of qudits. Each of the second plurality of qudits can interact with at least one of the first plurality of qudits so that the state of each of the second plurality of qudits can be read by one of the plurality of SEBs from a neighbouring one of the first plurality of qudits.

A quantum electronic device with a charge detector for determining a property of a qubit, and a method for determining said property. The invention concerns to a quantum electronic device with at least one charge detector (3) configured to determine a property of a semiconductor quantum dot (5), and a method for determine a property of a semiconductor quantum dot (5) controlled by a plunger gate (13). The charge detector (3) is arranged at or in vicinity of the semiconductor quantum dot (5). The charge detector is a single electron box, SEB, detector including a conductive island (10) separated from an electrode (9) by means of a quantum tunnel barrier (11), wherein the quantum tunnel barrier is configured to facilitate electron tunneling indicative of quantum state variations. The tunneling is used to infer a state of a qubit associated with the quantum dot, wherein the electrode is connected to a circuitry configured to enable readout of the state of the qubit associated with the quantum dot.

The invention discloses a luminescent material based on two-component light-induced single electron transfer stable luminescent free radicals, a method and application. The invention provides a novel strategy for preparing light-emitting free radicals based on a bi-component synergistic stabilization mechanism, benzophenone (BP) with an electron-withdrawing property and triphenylphosphine (TPP) with an electron-donating property are doped, and the triphenylphosphine free radicals are stabilized by virtue of benzophenone; and the light-emitting wavelength and intensity of the bi-component free radicals can be adjusted by changing substituent groups of BP and TPP. According to the invention, the combination of a bi-component stable mechanism and an optical excitation single electron transfer donor-acceptor method is realized, and the problems of complex synthesis steps, high degree of luminophor and matrix structures and the like in the existing stable free radical luminescence method can be effectively solved; the method is expected to provide a novel visual and rapid way for preparation of luminescent materials with the stimulation response function, drug impurity inspection and the like, and has a wide application prospect.

The application provides an electron accelerator-based electric current sub-energy measurement method and device, which is applied to a quantum current measurement system, and the strength of a magnetic field is determined by the energy of a reference electron beam emitted by a microwave electron gun and the deflection amount of the reference electron beam on a secondary iron; the energy of a to-be-measured electron beam is obtained by analyzing a beam spot image of the to-be-measured electron beam on a fluorescent screen captured by a CCD camera; the energy of the to-be-measured electron beam is compared with the energy of the reference electron beam, and the energy of the to-be-measured electron beam is adjusted according to the comparison result. The existing quantum current reference device counts based on single electrons, resulting in a narrow range of counting values, and there is uncertainty in the electron parameters in the generation, transmission and counting process of the electron beam. The scheme introduces the technology in the field of particle accelerators, generates and counts the electron beam by using the accelerator technology, can overcome the problem of small range caused by counting based on single electrons, and can use the magnetic deflection method to measure the energy of the electron beam in real time and adjust the experimental parameters in time.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

The application discloses a synthetic method for constructing N-B bond-containing pyrazole derivatives, and the method is characterized in that, under light conditions, an iridium metal complex is used as a photosensitizer, and an alkenyl diazo compound 1 is reacted with an azaheterocyclic carbene borane compound 2 in a solvent. In the reaction process, the azaheterocyclic carbene borane compound 2 generates an azaheterocyclic carbene boron radical cation through a single electron transfer process under the action of visible light and the photosensitizer, and the azaheterocyclic carbene boron radical cation then completes an addition-cyclization reaction on the alkenyl diazo compound 1. The method is driven by visible light as a green energy source, and the reaction is carried out in an air atmosphere, has a short reaction time and high efficiency, and is easy to operate.

The invention discloses a method for removing acetochlor in water by using ferrous ion activated persulfate, and belongs to the field of water treatment. Ferrous ions activate persulfate through single electron transfer, sulfate free radicals SO4 <-> with strong oxidizing property are generated, SO4 <-> attacks acetochlor molecules, ring opening and mineralization are achieved through electron transfer, hydrogen extraction or addition reaction, and a good removal effect on acetochlor in water is achieved. The operation method comprises the following steps: adding ferrite, hydroxylamine hydrochloride and persulfate into a pre-acidified water sample containing acetochlor according to a certain concentration, and stirring to react for a certain time, so as to remove acetochlor in the water sample. Compared with the prior art, the method has the characteristics of simplicity in operation, high reaction rate, good removal effect and low cost, the removal rate of 98-99% can be realized by only about 15 minutes for a natural water body with low background concentration of acetochlor, and the acetochlor index in effluent meets the requirements of Standard for Sanitary Drinking Water (GB 5749-2022).

The invention belongs to the technical field of organic chemical synthesis, and relates to an aromatic diaza-tribole compound as well as a synthesis method and application thereof. According to the present invention, the alkali metal is adopted to reduce the dibromo-diaza-tribolole, and the nitrogen heterocyclic carbene is added so as to achieve the stable coordination, such that the aromatic diaza-tribolole compound is synthesized for the first time; the compound has relatively strong reducibility, and can be subjected to single-electron, double-electron and four-electron oxidation reactions to obtain a positive ion type diazabicyclo [3, 1, 1] heptane free radical, a double positive ion type diazabicyclo [3, 1, 1] heptane and a double positive ion type diazabicyclo [3, 1, 1] heptane free radical. The BNS-hetero 6, 5-fused bicyclic derivative can also be subjected to a continuous ring increasing / cycloaddition reaction with an unsaturated substrate such as carbon disulfide to generate the BNS-hetero 6, 5-fused bicyclic derivative.

This invention discloses a triarylamine crosslinked molecule with a halostyrene side chain, its preparation method, and its applications, belonging to the field of optoelectronic materials technology. This triarylamine crosslinked molecule with a halostyrene side chain exhibits good structural symmetry and good orbital separation characteristics, effectively suppressing nonradiative recombination of electrons and holes during carrier transport, which is beneficial to improving the carrier separation and transport efficiency of the device. When applied to the fabrication of perovskite solar cells, it improves the photoelectric performance of the device. Single-electron and single-hole device tests show that after adding this crosslinked molecule, the trap filling threshold voltage is significantly reduced, the trap density decreases, and the electron mobility and hole mobility increase. This crosslinked molecule can effectively passivate perovskite defects and improve carrier transport capability, making it suitable for high-efficiency and stable perovskite solar cells.

Synchronized STEM and TEM microscopy. A method for investigating a sample by TEM and STEM techniques using a single electron microscope system includes the steps of: emitting electrons toward the sample; forming the electrons into two beams; and then modifying a focusing property of at least one of the two beams so that the two beams have different focal planes. Once the two beams have different focal planes, a first electron beam is focused so that the first electron beam acts as a STEM beam focused at the sample, and a second electron beam is focused so that the second electron beam acts as a TEM beam as a parallel beam when incident on the sample. Emissions resulting from the STEM beam and the TEM beam incident on the sample can then be detected by a single detector or an array of detectors, and the emissions used to produce a TEM image and a STEM image.

A quantum device includes an actuator including a graphene material and having a proximal end mounted to an actuator anchor; an electrode disposed on a distal end of the actuator; a quantum dot, configured to localize a single electron, the quantum dot and the electrode disposed within a common vacuum to define a tunneling gap; and a quantum dot anchor, including the graphene material, disposed in a same plane as the quantum dot relative to the electrode. The quantum device may include a modulator configured to emit electromagnetic signaling within a particular frequency range. The graphene material is tuned to increase a Casimir force between the electrode and the quantum dot anchor in response to the electromagnetic signaling. The increased Casimir force causes the actuator to deform to bring the electrode within an electron tunneling range of the quantum dot, or lowers a tunneling barrier on a static electrode.

The present invention is a novel and useful apparatus and method of sensing spin state to enhance spin-qubit readout in qubit arrays, in particular, a single electron box (SEB) based spin state charge sensing circuit and related control algorithms for quantum charge sensing in a quantum dot array. To overcome limitations of thermal noise and scalability issues, the system utilizes floating lead readout mechanisms to amplify potential shifts and multi-island architectures that leverage Coulomb interactions for higher-temperature operation. An adaptive golden mean control mechanism mitigates nonlinear dynamics and signal drift. By identifying the steepest slope of the sensor signal for maximum sensitivity, the system employs rule-based feedback and reinforcement learning (RL) agents to dynamically tune control gate voltages. These agents maximize the differentiation between charge states by adjusting the step magnitude or autonomously determining the full control gate voltage, ensuring high-fidelity, autonomous sensor stabilization in complex, noisy quantum environments.

A silicon-based quantum processor is disclosed that includes a plurality of unit cells having qudits of interest that can interact with each other directly or indirectly. Each unit cell includes a charge reservoir (101) and a plurality of single electron boxes (SEBs) (103a, b, c, d), which are gated charged islands separated from the charge reservoir by tunneling barriers. A first plurality of qudits (105a, b) for use as ancillary qudits is provided around each SEB. A second plurality of qudits (107a, b) for use as data qudits is provided around the first plurality. Each of the second plurality of qudits can interact with at least one of the first plurality of qudits such that the state of each of the second plurality of qudits can be read out from a neighbor of the first plurality by one of the SEBs.

The invention discloses a multimode scanning probe of a monolithic integrated single electron transistor and a method, and relates to the technical field of nano electronic devices. The scanning probe comprises a monocrystalline silicon main body structure, and the monocrystalline silicon main body structure is formed in a monocrystalline silicon device layer of a silicon-on-insulator substrate; the monocrystalline silicon main body structure comprises a micro-cantilever which is released and suspended, and a probe tip which is located at the free end of the micro-cantilever and a probe tip which is located at the free end of the micro-cantilever are integrally integrated on the micro-cantilever; the single electron transistor comprises a source electrode, a drain electrode, a grid electrode and a coulomb island; and the coulomb island is arranged near the tip of the probe so as to sense electrostatic information below the tip of the probe in an electric field coupling mode. According to the invention, through a core framework that a single crystal silicon main body structure is integrated with a cantilever beam and a single electron transistor, in-situ, synchronous, high-sensitivity and performance-compromise-free correlation measurement of sample morphology and electrostatic characteristics under a nanoscale is realized.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

This invention belongs to the field of vacuum electronic devices, specifically relating to an electron gun design method for a circular single-electron-beam G-band extended interaction klystron. The invention introduces an n (2≤n≤10) periodic structure on the electron gun focusing electrode surface to regulate the electrostatic field distribution, thereby increasing the total emission current of the electron gun cathode and enhancing the electron beam power. This method employs a circular single electron beam, ensuring simple design and fabrication of the magnetic focusing system and stable electron beam transmission. The electron gun focusing electrode uses an n-periodic corrugated control structure, guaranteeing that under G-band conditions and high electron beam voltage, the cathode emission current density is less than 12 A / (cm^2), the total cathode emission current is approximately 0.334 A, and its static flux density is 100%. This invention solves the problems of stable and efficient high-energy electron beam focusing and transmission in existing G-band extended interaction klystrons, while also considering the simplicity of electron gun fabrication and assembly, long cathode life, and a simple magnetic focusing system.

The invention discloses a multi-electron transfer quinone derivative as well as a preparation method and application thereof. The multi-electron transfer quinone derivative has a structure as shown in a formula I, the multi-electron transfer quinone derivative takes a series of pyrene as a substrate, carbonyl redox centers are introduced to 4, 5, 9 and 10 sites through a low-cost metal catalytic oxidation reaction, then hydrophilic through a sulfonation reaction and used as a reversible couple, and the multi-electron transfer quinone derivative can be directly used as an electrolyte for an aqueous organic flow battery after being dissolved in water without subsequent treatment. The pyrene tetraketone derivative couple can realize two-to-four-step four-electron transfer in the oxidation-reduction process, and compared with a traditional organic active couple with single electron transfer, the volume capacity is improved by four times; meanwhile, due to the expanded conjugated structure of the pyrene tetraketone parent nucleus, the electron delocalization range is enlarged, and the rigidity of an organic framework is enhanced, so that the couple has excellent redox kinetics and cycling stability.

The present invention is a novel and useful apparatus and method of sensing spin state to enhance spin-qubit readout in qubit arrays, in particular, a single electron box (SEB) based spin state charge sensing circuit and related control algorithms for quantum charge sensing in a quantum dot array. To overcome limitations of thermal noise and scalability issues, the system utilizes floating lead readout mechanisms to amplify potential shifts and multi-island architectures that leverage Coulomb interactions for higher-temperature operation. An adaptive golden mean control mechanism mitigates nonlinear dynamics and signal drift. By identifying the steepest slope of the sensor signal for maximum sensitivity, the system employs rule-based feedback and reinforcement learning (RL) agents to dynamically tune control gate voltages. These agents maximize the differentiation between charge states by adjusting the step magnitude or autonomously determining the full control gate voltage, ensuring high-fidelity, autonomous sensor stabilization in complex, noisy quantum environments.

This invention discloses a method for single-stage electron beam cold hearth melting of high-quality titanium alloy ingots, belonging to the field of titanium alloy melting technology. The method includes: constructing a C-shaped refining zone using a refining lance and a holding lance with zoned control; one refining lance is divided into two sections covering the transverse refining zone, and another refining lance covers the longitudinal refining zone; two holding lances precisely cover the outer and inner circumferences of a circular crystallizer, respectively; and a slag-blocking plate is inclinedly installed between the transverse refining zone and the crystallization zone. This invention, through the heat distribution design of the C-shaped cold hearth refining zone combined with the powerful stirring of the crystallizer by an external magnetic field, effectively solves the problems of microscopic segregation and compositional inhomogeneity in single-stage EB melting. This allows the EB ingots produced by single-stage melting to fully match or even surpass traditional secondary or tertiary VAR melting ingots in terms of chemical composition uniformity and the removal of high and low density inclusions.

The invention relates to the technical field of capacitance measurement, in particular to a capacitance measurement system and method based on a continuously-charged single-electron transistor, electronic equipment and a storage medium, and the system comprises a capacitance detection circuit which enables the capacitance value to change when a gyroscope rotates, so that the voltage difference between the two ends of a bridge changes; the circuit balancing unit closes the discharge switch according to the target frequency to balance the bridge voltage; the single-electron pump module comprises a first single-electron transistor and a second single-electron transistor which are connected in series, the first single-electron transistor and the second single-electron transistor are both connected with the two ends of the bridge, and the first single-electron transistor and the second single-electron transistor are continuously charged through pumping electrons to expand the pressure difference between the two ends of the bridge until the pumping limit is reached; the counting module is used for counting the number of single electrons flowing through the single electron pump; the processing module calculates capacitance variation according to the number of single electrons and calculates the capacitance of the gyroscope according to the capacitance variation and the limit voltage difference between the two ends of the bridge. Therefore, the problems of limited signal-to-noise ratio, large noise interference, insufficient measurement precision and the like in capacitance measurement are solved.

An organic electroluminescent device comprising: a first electrode, a second electrode, and an organic emissive layer (EML) comprising: a metal-organic host compound MOH, and an organic emitter compound OE, and wherein the metal-organic host compound MOH has a total spin of > = 1 / 2 and / or has one or more unpaired electrons, the lowest electron excited state in the emissive layer EML is the exciplex EXMOH / OE formed by a single electron transfer between MOH and OE, the first excited triplet energy T1OE of the organic emitter resonates with or is higher than the exciplex energy EEEX: T1OE > = EEEX; the energy difference between the emitted first excitation singlet S1OE and the energy of the exciplex is less than 0.4 eV: S1OE-EEEX < = 0.4 eV.

The invention provides a quantum current combined measurement device and method based on high-precision vacuum pressure control. The apparatus comprises: a vacuum chamber; the vacuum pump is communicated with the vacuum chamber; the vacuum pressure control assembly is communicated with the vacuum chamber; the high flow intensity measuring assembly is arranged in the vacuum intensity chamber; the low flow intensity measuring assembly is arranged in the vacuum chamber. The vacuum degree in the vacuum chamber is regulated and controlled through the vacuum pressure control assembly, when single-electron-grade extremely weak current is measured, the vacuum degree is reduced, signals are guided and collected through the low-current-intensity measurement assembly, and signal ions are multiplied and detected; and when the current is increased to a nanoampere level and above, the vacuum degree is improved, and the high-current-intensity measurement assembly is switched to carry out direct charge collection measurement. According to the quantum current combined measurement device, the vacuum degree serves as a key control variable, and the high sensitivity of a low-current-intensity measurement assembly to weak signals and the high-precision measurement capacity of a high-current-intensity measurement assembly to strong signals are integrated into one system.