452 results about "Single electron" patented technology

A Single Electron MOS Memory (SEMM), in which one bit of information is represented by storing only one electron, has been demonstrated at room temperature. The SEMM is a floating gate Metal-Oxide-Semiconductor (MOS) transistor in silicon with a channel width (about 10 nanometers) which is smaller than the Debye screening length of a single electron stored on the floating gate, and a nanoscale polysilicon dot (about 7 nanometers by 7 nanometers by 2 nanometers) as the floating gate which is positioned between the channel and the control gate. An electron stored on the floating gate can screen the entire channel from the potential on the control gate, and lead to: (i) a discrete shift in the threshold voltage; (ii) a staircase relation between the charging voltage and the shift; and (iii) a self-limiting charging process. The structure and fabrication of the SEMM is well adapted to the manufacture of ultra large-scale integrated circuits.

The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers, one or more nanoparticles attracted to and in contact with the at least one monolayer, and at least one tunneling barrier in contact with the one or more nanoparticles. Typically, the single electron structure or device formed therefrom further comprise a drain, a gate and a source to provide single electron behavior, wherein there is a defined gap between source and drain and the one or more nanoparticles is positioned between the source and drain.

A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.

Devices and methods for detecting the constituent parts of biological polymers are disclosed. A molecular analysis device comprises a molecule sensor and a molecule guide. The molecule sensor comprises a single electron transistor including a first terminal, a second terminal, and a nanogap or at least one quantum dot positioned between the first terminal and the second terminal. A nitrogenous material disposed on the at least one quantum dot is configured for an interaction with an identifiable configuration of a molecule. The molecule sensor develops an electronic effect responsive to the interaction. The molecule guide is configured for guiding at least a portion of the molecule substantially near the molecule sensor to enable the interaction.

A molecular analysis device comprises a molecule sensor and a nanopore that passes through, partially through, or substantially near the molecule sensor. The molecule sensor may comprise a single electron transistor including a first terminal, a second terminal, and a nanogap or at least one quantum dot positioned between the first terminal and the second terminal. The molecular sensor may also comprise a nanowire that operably couples a first and a second terminal. A nitrogenous material that may be disposed on at least part of the molecule sensor is configured for a chemical interaction with an identifiable configuration of a molecule. The molecule sensor develops an electronic effect responsive to a molecule or responsive to a chemical interaction.

A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a quantum dot in the portion of the nanowire channel insulated by the plurality of oxide channel areas, and a gate electrode surrounding the quantum dot.

A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.

It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5;

wherein said field-effect transistor 1A comprises:

an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; and

a gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.

A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.

A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.

Disclosed herein are nanoscale heterojunctions and methods of making and using thereof. The heterojunctions comprise at least one carbon nanotube with at least one nanostructure such as a quantum dot connected, immobilized, attached, or affixed thereto. The carbon nanotubes may be single walled, multi-walled, or a combination of both. The nanostructure is preferably a quantum dot such as a ZnS capped CdSe core. The carbon nanotube heterojunctions may be employed in various nanoscale electronics and optoelectronic devices and multilayered systems including light emitting diodes, single electron transistors, spintronic devices, field emission flat panel displays, vacuum microelectronic sources, biosensors, random access memories, spin valves, and the like.

The present invention relates to a device for data storage. In particular the invention relates to a single electron memory device utilizing multiple tunnel junctions, and arrays or matrixes of such devices. The data storage device according to the invention comprises at least one nanowhisker adapted to store a charge. Each of the nanowhiskers comprises a sequence of axial segments of materials of different band gaps, arranged to provide a sequence of conductive islands separated by tunnel barriers and a storage island arranged at one end of the conductive island/tunnel barrier sequence, whereby to provide a data storage capability. The number of conductive islands should preferably be between five and ten.

The present invention provides an MFM or MRFM analytical device comprising a micro-dimensional probe that is capable of detecting single proton and single electron spin. Furthermore, it provides an MFM or MRFM device comprising a micro-dimensional probe, that is capable of detecting magnetic structures of size of order one nanometer. In particular, the present invention provides a micro-dimensional probe for an MFM or MRFM device that comprises a CNT cantilever that comprises a nanoscale ferromagnetic material. The CNT cantilever can be attached to an electrode as a component of a microscopic probe which is coupled with an electrical circuit as a component of a device for nanoscale MFM or MRFM micro-dimensional probes. The device comprising the probe and electrical circuit can be incorporated into an existing scanning probe microscope (SPM) apparatus having accommodation for electrical readout.

A preferred method for transmission electron microscopy includes a step of generating a microscopy signal. The microscopy signal is then detected with an active pixel detector that includes a plurality of pixels. Each of the pixels includes at least one photodiode. Each pixel integrates an incident signal over a collection time period. Using a massibel parallel on chip analog to digital conversion, very fast read out times can be achieved, e.g., many frames per second. In a preferred embodiment, the read out time permits there to be a single electron event recorded per pixel, indicating either a single electron or the lack thereof. This permits simple accumulation of the pixel counts for each pixel in read-out and storage electronics.

The present invention relates to a method for synthesizing high luminescence semiconductor quantum dots with a core-shell structure in a short time in large quantity. Using the method of synthesizing the quantum dots in accordance with the present invention, a large quantity of quantum dots can be economically synthesized in a rapid time without an explosion. And, the present invention can be applied to the fields employing various luminous materials since the luminous semiconductor quantum dots synthesized by the present invention has a high luminous efficiency and they can emit a light at various wavelengths in the whole range of a visible ray. And also, the present invention can be applied to a light emission device, a single electron transistor, a solar cell photo-sensitizer material and a bio-labelling tag since it is excellently stable.

An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal, an input terminal for receiving an electrical current or being supplied with a voltage to be measured, a bipolar transistor having a base, an emitter and a collector, wherein a first PN junction is formed between the base and the collector and a second PN junction is formed between the base and the emitter, wherein the emitter is coupled to the input terminal and the base is coupled to the second voltage supply terminal, and wherein the first PN junction is designed for reverse biased operation as an avalanche diode, and a quenching and recharging circuit having a first terminal coupled to the first voltage supply terminal and a second terminal coupled to the collector of the bipolar transistors, the quenching and recharging circuit permitting operation of the first PN junction reverse biased above the breakdown voltage of the first PN junction.

A single electron transistor device for sensing at least one particle, includes at least two electrodes positioned with a gap formed between the electrodes and an activation object positioned in the gap with an insulating layer between the activation object and each electrode. The activation object which is able to transfer electrons is arranged with at least one binding structure bonded to it for receiving the at least one particle. The electrodes are formed with an inter distance of less than 50 nm and the electrodes are connectable directly or indirectly to a signal acquisition system. The sensing device is arranged to allow a tunnelling current proportional to the presence of the at least one particle in the binding structure, to flow through the activation object. A method, and system using a single electron transistor device fabricated with micro/nano fabrication methods are also disclosed.