529 results about "Very large scale integrated circuits" patented technology

A Single Electron MOS Memory (SEMM), in which one bit of information is represented by storing only one electron, has been demonstrated at room temperature. The SEMM is a floating gate Metal-Oxide-Semiconductor (MOS) transistor in silicon with a channel width (about 10 nanometers) which is smaller than the Debye screening length of a single electron stored on the floating gate, and a nanoscale polysilicon dot (about 7 nanometers by 7 nanometers by 2 nanometers) as the floating gate which is positioned between the channel and the control gate. An electron stored on the floating gate can screen the entire channel from the potential on the control gate, and lead to: (i) a discrete shift in the threshold voltage; (ii) a staircase relation between the charging voltage and the shift; and (iii) a self-limiting charging process. The structure and fabrication of the SEMM is well adapted to the manufacture of ultra large-scale integrated circuits.

Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated.

A circuit for distributing a clock signal in an integrated circuit includes a capacitive clock distribution circuit having at least conductor therein. At least one inductor is formed in a metal layer of the integrated circuit and is coupled to the clock distribution circuit. The inductor, generally in the form of a number of spiral inductors distributed throughout the integrated circuit, provides an inductance value selected to resonate with the capacitive clock distribution circuit. By operating the clock distribution circuit at resonance, power dissipation is reduced while skew and jitter performance can be improved.

The invention relates to a method for decoding high efficient and concurrent CABAC (adaptive binary arithmetic coding based on context) and a device thereof. The method and the device is in particular used for realizing novel VLSI (Very Large Scale Integrated circuits) with video decoding standard H.264 as well as aims at the CABAC decoding process regulated in main grade. The invention includes a method for decoding variable arithmetic, a device for decoding the concurrent binary arithmetic as well as a device for generating and updating concurrent probability. The decoding device can guarantees real time decoding of a video image with high definition (1080i system 30Mbps) in the worst situation.

The invention relates to a plate heat pipe radiator, which comprises a sheet sealed case made from metallic sheet, whose inner chamber is vacuum and filled with liquid working substance which can be gasified when heated; the outer side of the bottom of case has a heat adsorption end face which is close to the surface of heating electric element to adsorb the heat; the chamber of case has a support element which is connected to the inner surface of said case to eliminate the case deformation caused by the pressure generated by the outer atmosphere pressure of the gasified liquid working substance. The invention via the heat pipe and strengthening the structure of sheet case, overcomes the defects of traditional aluminum alloy heat radiator on the miniaturization and high speed development.

A shorter gate length FET for very large scale integrated circuit chips is achieved by providing a wafer with multiple threshold voltages. Multiple threshold voltages are developed by combining multiple work function gate materials. The gate materials are geometrically aligned in a predetermined pattern so that each gate material is adjacent to other gate materials. A patterned linear array embodiment is developed for a multiple threshold voltage design. The method of forming a multiple threshold voltage FET requires disposing different gate materials in aligned trenches within a semiconductor wafer, wherein each gate material represents a separate work function. The gate materials are arranged to be in close proximity to one another to accommodate small gate length designs.

A method for timing verification of very large scale integrated circuits reduces required CPU speed and memory usage. The method involves steps including partitioning the circuit into a plurality of blocks and then partitioning the verification between shell path components and core path components. Timing verification is then conducted for only shell path components while core path components are abstracted or ignored. Finally, timing verification for core path components in each block completes the process for the entire design.

A low impedance power distribution structure and method for substrate packaging of semiconductor chips containing very large scale integrated circuit (VLSI) circuits, such as microprocessors and associated memory, is presented. The power distribution structure incorporates under bump metallurgy (UBM) solder bump forming technology to produce not only solder bump connections that are vertically oriented, but also low impedance distribution wires that are horizontally oriented, and which provide electrical interconnection between various selected electrical contact points, such as solder bumps. These low impedance distribution wires introduce the benefits of low characteristic impedance to the substrate's power distribution structure.

The invention discloses a preparation method of hexaaniline cyclotriphosphazene and non-halogen flame retardant epoxy resin composition. The preparation method of hexaaniline cyclotriphosphazene comprises the following steps: adding solvent, hexachlorocyclotriphosphazene, aniline and acid-binding agent into a reaction device, stirring and introducing nitrogen for protection, heating the mixture to 50-120 DEG C, adding catalyst into the reaction device, reacting for 5-16h and cooling to room temperature, filtering, carrying out reduced pressure distillation on the filtrate, carrying out evaporation to remove solvent to obtain brown thick product, placing the product in a drying oven, drying for 8h in vacuum at 40-70 DEG C, crushing to obtain powder product, namely the hexaaniline cyclotriphosphazene. The non-halogen flame retardant epoxy resin composition applied to large-scale and very-large-scale integrated circuits encapsulation is prepared by mixing the prepared hexaaniline cyclotriphosphazene with o-cresol formaldehyde epoxy resin, microsilica, curing catalyst, silane coupling agent, lubricant, flexibilizer and stearic acid, milling, crashing and demagnetizing.

The invention discloses polyamide resin and intermediate compound thereof as well as the preparation method and the application. The polyamide resin is provided with the chemical structure shown in formula II, wherein, X1 and X2 can be identical or different, representing quadrivalent aryl; Ar represents bivalent aryl, and T represents end capping reagent. The polyamide resin is obtained by polyamic acid shown in formula I structure general formula through chemical imidization or thermal imidization. The polyamide resin is dipped through prosomatic polyamic acid solution or polyamic acid solution being obtained after being dissolved with solvent with a low-boiling point, the basal body is strengthened, and the prepreg is obtained. After the heat-press forming operation is performed, a metal foil layer is covered, and a metal foil layer pressing plate is obtained. The polyamide resin provided by the invention has the advantages of excellent heat resisting property, high mechanical property, low dielectric constant and dissipation, high electrical insulation property and low water absorbing capacity, thereby being especially suitable for manufacturing core plates of packaging subsctrates for packaging super large-scale integrated circuits.

The invention relates to a method and a device for analyzing the reliability of an integrated circuit. In the analytical method, a unit circuit delayed aging stochastic analysis reference model in consideration with both negative bias temperature instability (NBTI) effect and process parameter perturbation is established, a scaling function and an equivalent aging time concept are provided to solve the delayed statistical distribution of a unit circuit under the actual work environment quickly from the reference model, and the pre-clipping process of the circuit is provided to reduce the complexity of reliable analysis. The device of the invention comprises an input unit, an output unit, a program storage unit, an external bus, a memory, a storage administration unit, an input/output bridging unit, a system bus and a processor. In the method and the device, the effect of the process parameter perturbation, the NBTI effect and the work environment of the circuit on reliability are considered simultaneously, and the complexity of the reliable analysis can be reduced effectively by utilizing the scaling function, equivalent aging time and the pre-clipping technology so as to realize the quick analysis on the reliability of super-large-scale integrated circuits in consideration with process deviation.

The invention discloses an LED visible light wireless communication system for a mine, which comprises a signal I/O processing part, a receiving end part, an emitting end part, a main control chip set and a software control part, wherein hardware equipment comprises an LED mine lamp and an LED head lamp. In the invention, the communication system can avoid that the communication reliability is influenced because an optical detector is easily polluted due to large dust in the mine for the traditional LED visible light communication technology by adopting a communication mode of combining a UWB (Ultra-wide Band) wireless communication technology with an LED visible light communication technology on the basis of the design scheme of a programmable super-large-scale integration circuit chip, and can fully utilize the advantages of green illumination of LED visible light, wide coverage range, large transmission capacity and high modulation rate. The LED visible light wireless communication system is extremely low in power consumption, has the power consumption of hundreds mu W to tens mW which is only 1/10-1/100 that of the traditional radio station during high-speed communication, and is more easily realized in intrinsic safety design suitable for the mine.

2-dimensional (2-D) convolution calculation is widely applied in the field of image processing. The invention discloses a 2-D convolver. By decomposing the 2-D convolution calculation into parallel calculation of multiple 1-D convolution calculation windows and adopting the strategy that image data are input in a row or column leading Zigzag scanning format, the capacity of an on-chip memory is reduced, and on-chip resource overhead is reduced; because the 2-D convolver can accept two different image data input formats of row or column leading Zigzag scanning formats, the 2-D convolver is suitable for different application systems; and by adjusting the depth W of each double-port system random access memory (SRAM) in an intermediate result temporary storage unit and making good compromise between the capacity of the on-chip memory and the external bandwidth, flexibility of system design is brought. Compared with the conventional 2-D convolver, the 2-D convolver occupies fewer hardware resources, the throughput can meet the real-time requirements of most image processing systems, and the 2-D convolver can be used for realizing the 2-D convolution calculation in a low-cost embedded system. The 2-D convolver belongs to the field of super-large-scale integrated circuit structure design.

The invention discloses a preparing method of liquid crystal epoxy resin oligomer and epoxy resin composition. The method comprises that: p-phenylphenol, epoxy chloropropane, phase transfer catalyst, sodium hydroxide and distilled water as raw materials are reacted to prepare the liquid crystal epoxy resin oligomer. The epoxy resin composition comprises: mixing the prepared liquid crystal epoxy resin oligomer and other raw materials based on weight proportionality: 10-30 parts of liquid crystal epoxy resin oligomers by weight, 10-30 parts of o-cresol-formaldehyde epoxy resins by weight, 5-25 parts of melamine modified linear phenol aldehyde resins by weight, 60-150 parts of spherical silicon micronized quartz powders by weight, 0.1-2 parts of curing accelerators by weight, 2-10 parts of flexibilizers by weight, 0.6-5 parts of resin acceptors by weight and 0.5-5 parts of lubricants by weight, which are mixed for smelting, crushed and demagnetizing to prepare the epoxy resin composition comprising side chain liquid crystal structure. The epoxy composition has good heat-resistant property and good physical mechanical property, is suitable for the encapsulations of large scale and grand scale integrated circuits.

The invention relates to an overall wiring method for a super-large-scale integrated circuit under an X structure. The overall wiring method comprises the following steps of an initial stage: discomposing a multi-terminal wire network into a plurality of two-terminal wire networks by using a Steiner minimum tree method, and performing side connection on connectable two-terminal wire networks by using the X structure, namely performing initial wiring to obtain approximate wiring crowded distribution conditions; a main stage: selecting the most crowded area from the approximate initial wiring result as a current wiring area, establishing an integral linear programming model for the current wiring area, solving the integral linear programming model, continuously expanding the wiring area, and sequentially solving the wiring area until the wiring area is expanded to a whole chip; and an aftertreatment stage: redefining wiring side cost, and performing wiring on the two-terminal wire networks which are not communicated to one another by using a labyrinth algorithm based on the wiring side cost so as to obtain the final overall wiring result. By using the overall wiring method, the quality of a wiring scheme can be improved; and the overall wiring method is easy to implement, and is high in using effect.

A system and method for generating a power efficient clock gating network for a Very Large Scale Integration (VLSI) circuit. Statistical analysis is performed upon the activity of component registers of the circuit and registers having correlated toggling behavior are clustered into sets and provided with common clock gaters. The clock gating network may be generated independently from the logical structure of the circuit.

The invention relates to a multilayer obstacle-avoiding Steiner minimal tree construction method for a very large scale integration. The method includes the following steps: 1, reading benchmark test circuit network data; 2, initializing parameters such as population sizes and iterations, and generating initial populations randomly; 3, updating positions and speeds of particles according to a particle updating formula; 4, calculating fitness values of new particles according to a punishment mechanism based fitness calculation function, judging whether or not the fitness values of the new particles are smaller than historical optimal values of the particles, and if yes, updating the new particles as historical optimal particles of the particles; 5, judging whether or not the fitness values of the new particles are smaller than global optimal values of the populations, and if yes, updating the new particles as global optimal particles of the populations; 6, judging whether iteration end conditions are met or not, if yes, outputting final wiring trees, and if not, returning to the step 3 for next iteration. By the method, total wiring cost is reduced, and quality of the wiring trees is improved.

The invention provides an epoxy resin composite taking home-made spherical silicon powder as a filler. The epoxy resin composite consists of an epoxy resin, a phenolic resin, spherical silicon dioxide powder, a flame retardant, an accelerant, a coupling agent, a release agent and a colorant, wherein the spherical silicon dioxide powder is prepared by a melted jet method by taking natural silicon dioxide powder as a raw material; and the silicon powder with median particle diameter of 5-20 microns is prepared from the spherical silicon powder with different grain diameters. The epoxy resin composite comprises 84-90 percent of filler. The invention has the advantages of excellent fluidity, few overflow materials, good moulding processing property and capability of packaging large-scale or super-large scale integrated circuit.

The invention discloses a method for restraining integrated circuit electricity supply network transient voltage drop noise by using decoupling capacitance, belonging to the physical design field of superlarge-scale integrated circuit, in particular to the technical category of optimizing network noise of transient power wire earth wires, which is characterized in that the creation points lie in that: (1) proposing a rapid method for estimating a decoupling capacitance demand in a layout stage; proposing a two-dimensional function showing the decoupling capacitance demand in a chip; (3) establishing a supply and demand system for the demand of the decoupling capacitance by utilizing the two-dimensional function to guide that the layout process is performed toward the direction being beneficial for reducing the demand of the decoupling capacity; and (4) proposing a layout algorithm for adding the decoupling capacitance through integrating the above model and the method into a force direction layout. Experiments prove that the method of the invention is effective, and can achieve the layout result that the total amount of the decoupling capacity is decreased by about 35% with the cost that the on-line length is increased by about 0.5%.

The provided double-fin channel enclose-grid FET belonged to MOSFET technique in ULSI comprises: a silicon substrate, a grid anode and multicrystal silicon grid enclosing the channel to form the enclose-grid structure, both source and drain connecting with the substrate, two rectangular-section fins as the channels, and a thick SiO2 layer between the right bottom of channel and substrate. This invention reduces cost and power consumption, provides high-speed and high-performance circuit application.