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Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.
Single transistor reservoir computer using bti
A reservoir computing method (700) and related system (100) are disclosed. The reservoir computing system includes at least one non-linear computing node (103) with a computing node MOSFET (113), a drive circuit (110) coupled with the at least one non-linear computing node (103), and a readout unit (104) for acquiring an output sequence associated with the at least one non-linear computing node (103). The MOSFET has charge trapping sites positioned in a gate dielectric that exhibit a bias temperature instability when subjected to a voltage stress and exhibit a threshold voltage recovery after removal of the voltage stress. The drive circuit is configured to apply an input pulse and a readout pulse to a gate of the MOSFET. The readout unit (104) is configured to detect a current flowing through a channel region of the MOSFET when the drive circuit is applying the readout pulse. The readout pulse has a smaller voltage amplitude than the input pulse.
Owner:INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)