Method for testing temperature instability under minus bias pressure

An unstable, negative bias technology, applied in the direction of single semiconductor device testing, semiconductor/solid-state device testing/measurement, electrical measurement, etc., can solve problems such as temperature instability and inaccurate NBTI effect test results, and improve production Efficiency, saving manpower and material resources, and accurate test results

Inactive Publication Date: 2009-05-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

[0010] In order to solve the problem of inaccurate test results of the NBTI effect mentioned above, a method for testing temperature instability optimization under negative bias voltage is proposed, which can accurately obtain test results and improve production efficiency

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  • Method for testing temperature instability under minus bias pressure
  • Method for testing temperature instability under minus bias pressure
  • Method for testing temperature instability under minus bias pressure

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Embodiment Construction

[0020] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] In the study of the NBTI effect, it was found that the recovery of NBTI degradation has an obvious saturation property. The saturation nature of the NBTI recovery effect is: after various stress conditions, after about a period of recovery time (at this time, the V gate voltage is 0V or a voltage value lower than the operating voltage Vdd), the further recovery phenomenon of NBTI degradation It's almost negligible. figure 2 is a schematic illustration of the saturation nature of the recovery process for the NBTI effect. Such as figure 2 As shown, the abscissa is the recovery time of the NBTI effect, and the ordinate is the saturation leakage current drift. In this embodiment, the stress voltage applied to the gate voltage is -2V, and the temperature is 105°C. In the recovery stage, the gate voltage is 0.0V, and the same temperatur...

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Abstract

A method for testing temperature instability under negative bias relates to the field of semiconductor technology processing procedure. The method comprises the following steps: 1. the method for testing temperature instability under negative bias is characterized in that step 1, stress is applied to gate voltage to lift the gate voltage to gate voltage and then the gate voltage is reduced to an absolute value smaller or equal to working voltage in t; step 2, when the recovery stage finishes and before the next stress stage begins, an MOS transistor is measured; step 3, step 1 and step 2 are circularly executed until the accumulated stress time reaches reliability test standard. The method has the advantages of accurately testing temperature instability effect under negative bias, improving the accuracy of reliability assessment of semiconductor products, being beneficial to improving the technology of temperature instability under negative bias, shortening the cycle of product development and saving production cost.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for testing temperature instability under negative bias voltage. Background technique [0002] As described in the article "Research on Related Factors Affecting NBTI Effect in PMOSFET" published in "Microelectronics" in October 2004 (the authors are Han Liang, Hao Yue, and Liu Hongxia from the Institute of Microelectronics, Xidian University): Over the past few decades, the semiconductor industry has developed at an extraordinary speed and has made great achievements in the production of integrated circuits. At present, high-performance SOC products have been produced. As the semiconductor process enters the ultra-deep sub-micron level, some key issues affect the production of semiconductor integrated circuits, including NBTI (Negative Bias Temperature Instability, temperature instability under negative bias). [0003] The NBTI effect is an important factor aff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R31/00H01L21/66
Inventor 靳磊
Owner SEMICON MFG INT (SHANGHAI) CORP
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