150 results about "Microelectronics" patented technology

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and / or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO3 to various conventional substrates in a process for making various novel optical and acoustic devices.

The invention relates to the technical field of microelectronics, and discloses a three-dimensional stacked near-memory computing architecture, a chip and a data access method. The memory device comprises at least one computing chip layer and at least one memory chip layer which are stacked along a first direction, a plurality of vertical interconnection channels extending along the first direction; the memory chip layer comprises a plurality of memory banks; the computing chip layer comprises a plurality of computing cluster units; the computing cluster unit comprises at least one storage controller; and the storage controller is connected with at least one of the plurality of storage banks through the vertical interconnection channel and is used for managing data in the correspondingly connected storage banks. The problems that in a three-dimensional stacking computing architecture, storage access delay is high, and the bandwidth expansion capacity is limited are solved.

A microneedle array system with heterogeneous needles, designed for the enhanced transdermal delivery of bioactive agents for therapeutic and diagnostic purposes. This system includes a variety of microneedle 140 configurations, such as primary and secondary microneedles that differ in size, shape, and material to optimize delivery and functionality. Secondary needles are specifically designed with additional features such as sensors, specialized coatings, and microelectronics to perform tasks beyond simple delivery, such as in-situ detection and measurement of physiological responses, and stimulation for enhanced drug absorption and therapeutic effect.

The invention belongs to the technical field of preparation of new energy materials and supercapacitors, and particularly relates to a Mo-Fe co-doped MnO2 / Ag-CNTs composite electrode and a preparation method and application thereof. The method comprises the following steps: firstly, preparing an activated carbon cloth substrate, a deposition solution A and a deposition solution B; then the deposition solution A and the deposition solution B are mixed to obtain a Mo-Fe-MnO2 deposition solution, and an Ag-CNTs deposition solution is prepared; and finally, electro-deposition is alternately carried out in the Mo-Fe-MnO2 deposition solution and the Ag-CNTs deposition solution, and the Ag-CNTs / Mo-Fe-MnO2 / Ag-CNTs composite material is obtained. The preparation process provided by the invention is simple and controllable, and the large-scale preparation of the high-performance composite electrode is easy. The electrode is unique in structure and excellent in performance, and a flexible solid-state PSCSC device assembled by the electrode has high energy storage density and efficient mechanical energy self-charging capacity and shows huge application potential in the field of self-powered wearable / implantable microelectronics.

The application provides a GaN amplitude-phase control multifunctional chip and a phased array system, and belongs to the technical field of microelectronics. The GaN amplitude-phase control multifunctional chip comprises an input port, an output port, a distributed current multiplexing amplifier, a phase shifter, a first DC blocking capacitor and a second DC blocking capacitor; the distributed current multiplexing amplifier comprises a first switch tube, a second switch tube, a first gate voltage supply circuit, a DC self-bias circuit, a negative feedback circuit, a first choke filter circuit, a second gate voltage supply circuit, a second choke filter circuit and a voltage source. The application is based on the above-mentioned components and the connection relationship between the components, so that the push stage amplifier in the GaN amplitude-phase control multifunctional chip adopts a distributed current multiplexing structure, thereby reducing the power consumption of the push stage amplifier, improving the efficiency of the GaN amplitude-phase control multifunctional chip, and enabling the GaN amplitude-phase control multifunctional chip to realize high efficiency under the condition of small size and high power.

The present application relates to a kind of polyimide film and its preparation method and application, mainly solve the optical transparency of polyimide film in prior art and the dimensional stability difficult to be compatible with the problem of difficulty.This colorless transparent polyimide film provided by the present application has excellent comprehensive performance, simple preparation method, wide raw material source, and has excellent application prospect in the field of flexible display, advanced microelectronics and the like.

The invention relates to the technical field of vacuum microelectronics, and discloses a microwave plasma CVD cavity structure and MPCVD equipment, the CVD cavity structure comprises a copper table body and a substrate bearing surface arranged at the top of the copper table body, a copper column is arranged above the copper table body, a sunken part is arranged on one side, opposite to the copper table body, of the copper column, and the substrate bearing surface is arranged on the other side of the copper column. The substrate bearing surface is semi-surrounded by the sunken part, a gap delta H is reserved between the sunken part and the substrate bearing surface, and delta H is larger than or equal to 5mm and smaller than or equal to 50mm; the included angle theta between the axial center line of the copper column and the center axis of the copper table body is larger than or equal to 0 degree and smaller than or equal to 60 degrees. The invention aims to effectively enhance the intensity of the electric field above the substrate and greatly improve the distribution uniformity of the electric field on the premise of not obviously increasing the manufacturing cost and the process complexity, thereby providing a reliable solution for realizing large-area, high-uniformity and high-stability plasmas.

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal direct bonding creates high-density electrical interconnects on the same bonding interface as the bonded optical interconnect. Known-good-dies may be used, which is not possible conventionally, and photolithography over their top surfaces can scale to high density.

Provided is a micromechanical electrical signal amplifier, which can be applied to the field of microelectronics. The structure of the amplifier comprises: an electro-mechanical conversion structure for generating an electrostatic driving displacement; a mechanical resonance structure for generating an amplified electrical signal in response to the amplified electrostatic driving displacement; and a mechanical-electric conversion structure for outputting the amplified electrical signal, wherein the mechanical resonance structure comprises a first surface and a second surface arranged oppositely; the electro-mechanical conversion structure is connected to the first surface of the mechanical resonance structure; and the mechanical-electric conversion structure is connected to the second surface of the mechanical resonance structure. The elastic beam group in the mechanical resonance structure adopts a piezoresistive material, and the self-amplification effect of the mechanical resonance structure is used to amplify the electrostatic force response displacement and further amplify the electrical signal.

The application belongs to the technical field of microelectronics, discloses a micromechanical resonator and a preparation method thereof, and improves the Q value of the micromechanical resonator Q The application provides the micromechanical resonator, which comprises a resonant unit and a coupling block; the coupling block is used for realizing mechanical energy transmission between adjacent resonant units; at least one coupling block contained in the micromechanical resonator is provided with a thermal resistance enhancement structure; the thermal resistance enhancement structure is an etching groove formed in the coupling block, or the thermal resistance enhancement structure is composed of the etching groove formed in the coupling block and a low-thermal-conductivity material located in the etching groove; the thermal conductivity of the low-thermal-conductivity material is less than that of a main material of the coupling block. Q The application can effectively improve the Q value of the micromechanical resonator without affecting mechanical coupling between the resonant units.

A Plasma Enhanced Anneal (PEA) includes a exposing a top surface region of a substrate to a plasma to reduce the required activation energy temperature to anneal dopants for microelectronic devices. The plasma in a PEA process bombards surfaces with ions and atoms created in the plasma which allows controllable kinetic energy and ion flux to be transferred to the top surface region of the substrate and activate dopants at temperatures as low as 300° C. The plasma energy of the ions is known to dissipate into a region only a few nanometers in depth with energy densities large enough to activate dopants. PEA processing may be a promising method for dopant activation at temperatures lower than thermal techniques alone. PEA processing may also result in reduced thermal budget necessary for form silicides, anneal silicides, and anneal high-k dielectric materials.

The application discloses an LED unit substrate, an LED panel, an LED device and a preparation method, relates to the technical field of microelectronics, and can reduce the number of pins for electrically connecting the LED and a driving substrate, reduce the number of piece-making processes, improve the space utilization of the driving substrate, and realize the LED device with high PPI. An LED unit substrate comprises a control signal generator and a plurality of LEDs; the control signal generator comprises a first signal input end and a signal output end, the first signal input end is used for accessing a driving signal, and the signal output end is electrically connected with the LEDs; the control signal generator is used for generating a control signal based on the received driving signal, and the control signal is used for controlling the lighting state of the corresponding connected LEDs.

The invention discloses a foreground calibration method for relieving capacitor mismatch in an SAR ADC, and relates to the field of microelectronics and solid-state electronics, in particular to the field of high-precision SAR ADCs. According to the invention, an additional DAC is not introduced or an original DAC array structure is not modified, a complex calibration algorithm is not needed, all calibration modules are integrated in a chip, and the method is suitable for full-integration application. According to the technology, the linearity of the SAR ADC can be improved, and then the DNL / INL of the ADC is improved. The SAR ADC high-order capacitor array is sequenced and recoded, so that error accumulation caused by capacitor mismatch can be avoided, and small INL can be realized.

A microelectronic device package includes: a package substrate having a first set of leads spaced from a first die pad configured for mounting semiconductor devices, and a second set of leads spaced from a second die pad configured for mounting additional semiconductor devices, the first die pad and the first set of leads spaced from the second die pad and the second set of leads. Semiconductor devices are mounted to the first die pad and second die pad. A ceramic interposer is mounted to the package substrate in thermal contact with at least the first die pad. Mold compound covers the semiconductor devices, a portion of the ceramic interposer, and portions of the first set and the second set of leads.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

The present application relates to the field of microelectronics, and particularly relates to a single-molecule memristor based on a viologen derivative and a preparation method thereof.The single-molecule memristor based on the viologen derivative comprises an electrode pair and an organic functional molecule, the organic functional molecule is selected from a viologen derivative, and is assembled between the electrode pair through an amide condensation reaction.The organic functional molecule provided by the present application is modified in function on the basis of a viologen molecular structure, effectively reduces the energy barrier of a reversible redox reaction of a viologen unit, and thus significantly improves the performance of the single-molecule memristor;at the same time, the switching ratio of the device is also improved by an order of magnitude.The preparation method provided by the present application can ensure the stability and repeatability of the single-molecule device, and effectively improves the conductive stability and durability of a molecular junction of the organic functional molecule.The method is simple to operate and the reaction conditions are easy to control, and is conducive to realizing the large-scale production of molecular devices.

The invention discloses an ohmic contact device for improving boron doping by inducing graphite and a preparation method of the ohmic contact device, and relates to the technical field of microelectronics. The substrate is an intrinsic diamond substrate; the lightly doped diamond epitaxial layer is positioned on the upper surface of the substrate; the heavily-doped diamond epitaxial layer is located on the upper surface of the lightly-doped diamond epitaxial layer; the nano graphite layer is positioned on the upper surface of the heavily doped diamond epitaxial layer; the composite conductive layer is located on the upper surface of the nano-graphite layer; and the electrode is positioned on the upper surface of the composite conductive layer and forms ohmic contact with the composite conductive layer. According to the invention, good ohmic contact performance can be realized.

The invention relates to the technical field of microelectronics, and discloses a charge pump current mismatch compensation circuit and method and a phase-locked loop system, and the compensation circuit comprises a time-to-digital conversion module which is connected to a phase frequency detector of a phase-locked loop and is configured to detect the pulse width of an uplink signal and a downlink signal output by the phase frequency detector; the compensation current control module is connected with the time-to-digital conversion module and is configured to generate compensation current based on the uplink signal pulse width and the downlink signal pulse width; wherein the compensation current is configured to be input to a charge pump of the phase-locked loop so as to counteract current mismatch of the charge pump in real time. The problem that dynamic compensation cannot be achieved through static optimization in the prior art is solved, output voltage fluctuation of the loop filter is reduced, the stability and precision of the output frequency of the phase-locked loop system are improved, and meanwhile introduction of noise or limitation of the working range is avoided.

This invention relates to the field of silicone oil technology, and more particularly to a high-temperature resistant, high-film-forming release agent silicone oil, its preparation method, and its applications. The method is based on polymethylhydrosiloxane, and involves the introduction of phenyl groups, long-chain alkyl groups, and ≤3 mol% of 3,3,3-trifluoropropyl side chains through a multi-step hydrosilylation reaction. Finally, a high-performance release silicone oil is obtained through end-sealing and high-temperature release. The resulting silicone oil possesses excellent thermal stability, lubricity, and film-forming properties, making it suitable for efficient release applications in high-temperature composite materials, precision injection molding, and microelectronics processing, significantly superior to existing technologies.

The invention relates to the technical field of microelectronics, and discloses an impedance calibration device and method, the impedance calibration device comprises a circuit board, an impedance line and a characteristic impedance, and the copper surface of the circuit board is provided with a first contact; the impedance line is arranged on the circuit board, and a second contact and a third contact are arranged on the impedance line; and one characteristic impedance is arranged at each of the two ends of the impedance line. One signal pin of the probe is inserted into the second contact, and the other signal pin of the probe is inserted into the third contact, so that differential impedance calibration is realized; one signal pin of the probe is inserted into the first contact, and the other signal pin of the probe is inserted into the second contact or the third contact, so that single-end impedance calibration is realized; one device realizes two operations of differential impedance calibration and single-ended impedance calibration, and can perform impedance test on an impedance line in a board. According to the impedance calibration device provided by the invention, the problem that impedance test calibration cannot be carried out on in-board lines in a board edge impedance line test mode in the prior art is solved.

The present disclosure relates to improving the robustness and reliability of magnetoelectric (ME) films by fine-tuning different parameters of the films and providing additional features for operation of the ME films for long periods of time. The additional features may include e.g. mechanical holding such as a hermetic enclosure, electrical connections, hermetic protection, while parameters of the ME film may include geometric configurations including shape and the point of placement. Other additional features may include incorporating additional elements such as microelectronics into the hermetic enclosure as a system on module, adding desiccant elements, and bias magnets to enhance strain on the ME films. The ME films can also be miniaturized to make them suitable for integration into small-scale devices due to their compact size, low power consumption, and a high sensitivity to electric and magnetic fields.

This invention provides a single-particle-resistant Ga2O3 MOSFET device with an interdigitated gate pillar composite structure, belonging to the field of microelectronics technology. The device, from bottom to top, includes a substrate, an N-type Ga2O3 channel layer, a SiO2 dielectric layer, a lightly doped P-type NiO layer, a heavily doped P-type NiO layer, a first interdigitated gate pillar, a second interdigitated gate pillar, and an extended gate field plate. The lightly doped P-type NiO layer is located above the N-type Ga2O3 channel layer, and the heavily doped P-type NiO layer is connected to the extended gate field plate via the first and second interdigitated gate pillars. This invention enhances the device's resistance to single-particle burn-out through a dual synergistic mechanism, effectively mitigating the electric field concentration effect at the traditional gate edge, and successfully shifting the peak electric field location most susceptible to single-particle breakdown from the gate edge to the edge of the outermost interdigitated gate pillar. This invention significantly improves the overall single-particle burn-out threshold voltage of the device, providing key technical support for the application of Ga2O3 devices in high-radiation environments such as aerospace.

The invention discloses a method for preparing polyimide by reducing the imidization temperature of polyamide acid, which comprises the following steps: carrying out polymerization reaction on an aromatic diamine monomer and an aromatic dianhydride monomer in an organic solvent to generate polyamide acid, and then adding ZIFs to obtain a polyamide acid solution / ZIFs compound; the polyamide acid solution / ZIFs compound solvent is volatilized to obtain a polyamide acid / ZIFs compound, and then the polyamide acid / ZIFs compound is heated, so that the polyimide acid in the polyamide acid / ZIFs compound is subjected to imidization reaction to generate polyimide. By adopting the method to prepare the polyimide, the reaction temperature for generating the polyimide through imidization of polyamide acid can be obviously reduced, namely, the imidization temperature is reduced to 220 DEG C from the traditional imidization temperature greater than 300 DEG C, and the obtained polyimide has good thermal stability and transparency and can be applied to the high and new technical fields of display devices, photoelectrons, microelectronics, aerospace and the like.

The present disclosure provides a control method and device for a resistive random access memory (RRAM) array, which can be applied to the field of microelectronics technology. The control method comprises: for each RRAM in the RRAM array, performing a shaping operation on the RRAM based on a first preset voltage, a second preset voltage and a third preset voltage to obtain an activated RRAM in an activated state; and performing a setting operation on the activated RRAM based on the first preset voltage and the second preset voltage to obtain a first target RRAM with a resistance value in a first preset range, wherein the first preset voltage, the second preset voltage and the third preset voltage are generated by sub-circuits of a voltage generation circuit, and the first preset voltage, the second preset voltage and the third preset voltage are not equal to each other.

The invention discloses a splicable low-light-storage integrated power supply module, and belongs to the technical field of new energy and microelectronics. The module adopts a three-dimensional heterogeneous integrated stacking framework, and an optical window layer, a photoelectric conversion layer, a signal processing and power management layer and an energy storage layer are vertically integrated in a single packaging body. High-density vertical interconnection among the functional layers is realized through a system-level packaging technology, and a standardized interface is arranged on the side wall of the module, so that mechanical splicing and electrical interconnection among a plurality of modules are supported. Extreme miniaturization, high reliability and intelligent expandability of the optical storage power supply system are achieved, the problems that an existing discrete power supply scheme is low in space utilization rate, damaged in system efficiency, poor in reliability and the like are solved, and the optical storage power supply system is particularly suitable for application scenes such as Internet of Things equipment, portable electronic equipment and distributed sensing networks.

The embodiment of the application relates to the technical field of microelectronics, in particular to an actuator control method and system, an electronic device and a storage medium. The actuator control method comprises the following steps: obtaining a capacitance value of the actuator; obtaining position information of the actuator based on a preset position algorithm and the capacitance value; and controlling a working parameter of the actuator according to the position information when the position information does not satisfy a preset position condition. The working parameter of the actuator can be controlled according to the capacitance value of the actuator, so that the position of the actuator can be quickly and accurately detected based on capacitance detection, and the working parameter of the actuator is controlled according to the position of the actuator to quickly realize gain adjustment of the actuator.

The invention relates to an electromagnetic reinforcement GaN HEMT (High Electron Mobility Transistor) with a carrier diversion channel, and belongs to the technical field of microelectronics. The device aims at solving the problem that a traditional GaN HEMT is prone to thermal burnout due to grid edge current concentration in a high-power electromagnetic environment. According to the technical scheme, a carrier diversion channel composed of p-AlGaN and i-InGaN is introduced between an AlGaN barrier layer and a p-AlGaN cap layer. The structure can effectively guide a part of breakdown current to laterally expand and remarkably reduce the current density peak value of the edge of the grid, so that the local temperature rise rate of the device is slowed down, the electromagnetic burning time is finally prolonged by about 43%, and the reliability and robustness of the device are improved.

The invention discloses a low-power-consumption buffer circuit for neuron stimulation, which belongs to the technical field of microelectronics and comprises a neuron model, a current driving module, a buffer stage operational amplifier and a feedback resistance network. The neuron model is used for simulating electrical characteristics of biological neurons, the input end of the neuron model is connected with a node WE of the current driving module, and the output end is connected with a node RE; the current driving module is used for generating a current stimulation pulse under the control of the enable signal and providing the current stimulation pulse to the input end of the neuron model for electrical stimulation; the buffer stage operational amplifier is used for stabilizing the port voltage of the neuron model at a node RE, and comprises an amplification stage, a bias stage, a current buffer stage, an output stage and an auxiliary current stimulation stage; and the feedback resistance network is used for sampling voltage from a node RE and providing feedback voltage for the buffer stage operational amplifier after voltage division. The high-performance buffer circuit under low power consumption is realized, the standby time is prolonged, the chip area cost is saved, and integration is facilitated.

The invention relates to the technical field of microelectronics, in particular to a high-frequency acoustic resonator and a communication device. The high-frequency acoustic resonator comprises a supporting substrate, a bottom electrode, a piezoelectric film and a top electrode which are sequentially arranged in a stacked mode from bottom to top, the top electrode comprises an interdigital transducer, the interdigital transducer at least comprises an interdigital electrode pair and a bus bar, the normal direction of the interdigital electrode pair serves as the first direction, the electrode extending direction of the interdigital electrode pair serves as the second direction, and the bus bar is arranged in the first direction. The normal direction of the surface of the piezoelectric film is a third direction, setting the relative relationship of three volume wave sound velocities of the supporting substrate according to the relative magnitude of kinetic energy corresponding to polarization components of the target mode in three directions, and setting the relationship between the sound velocity of the target mode and the sound velocity of the supporting substrate, therefore, the sound wave in the target mode is restrained on the surface of the supporting substrate, so that a higher Q value and a higher target mode cutoff sound velocity can be realized on the premise that the slow shear wave sound velocity of the supporting substrate is the same, and the photoetching requirement is reduced.

The invention relates to the technical field of electrochemical energy storage devices, in particular to a high-compactness special film and a preparation method thereof. The modified PET base film is prepared from the following components in parts by weight: 100 parts of PET resin, 8 to 16 parts of modified polyamide acid, 10 to 15 parts of coupling agent modified filler, 2 to 6 parts of compatilizer, 0.5 to 1.5 parts of lubricant and 0.5 to 1 part of antioxidant. According to the invention, the high-density and strong-interface modified PET base film is obtained mainly by carrying out modification and enhancement treatment on the base film layer. Compared with a traditional PET film, the high-compactness special film prepared through the method is remarkably improved in compactness, mechanical performance, thermal stability and adhesive force, and can be widely applied to the fields of microelectronics, aerospace, new energy and the like.