547 results about "Microelectromechanical systems" patented technology

The invention discloses a micro-cantilever geometric structure parameter inversion system, method and device, and belongs to the technical field of micro-electro-mechanical systems. According to the system, a dynamic model containing geometry, material and electromechanical coupling nonlinearity is constructed, a PINNs network fused with physical constraints is designed, a staged training optimization strategy is adopted, and efficient inversion of micro-cantilever geometric parameters is achieved. The core of the method is that a nonlinear kinetic equation is used as a constraint to be embedded into a neural network for training, experimental data and physical residual errors are combined to construct a composite loss function, and the problems that a traditional method neglects a nonlinear effect, depends on finite element simulation and is low in inversion precision are solved. The average relative error of inversion of the system is lower than 1%, which is obviously superior to that of a traditional method, and the method can be widely applied to MEMS device design, online detection and closed-loop control scenes.

The technology described herein is directed towards a metasurface arranged with unit cells for narrowband sound absorption, in which the unit cells are based on Helmholtz resonators that can have their resonant frequencies adjusted via MEMS actuators. A sound absorbing unit-cell is designed and constructed based on a general resonance frequency, and includes a neck portion and air chamber dimensioned to resonate close to the desired resonance frequency and thereby inverse phase cancel corresponding narrowband frequencies of incoming sound waves. A bimorph MEMS actuator and / or moveable part in the resonators, controlled by a controller, facilitates changing of the airflow the unit cells to adjust the resonant frequencies thereof, to cancel acoustic waves of different frequencies corresponding to noise, which can change over time. The unit cells can be distributed as part of a metasurface, which can be positioned proximate to a noise source to phase cancel the noise.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a diaphragm including a piezoelectric material attached to the support substrate and configured to deform and generate an electrical potential responsive to impingement of sound waves on the diaphragm, and a compliant anchor formed of a material with a greater compliance than a compliance of the piezoelectric material, the compliant anchor defined in the diaphragm in an anchor region between the piezoelectric material of the diaphragm and the support substrate to improve sensitivity and reduce residual stress impact of the piezoelectric microelectromechanical system microphone.

The invention discloses an electroplating process method for preparing a deep-etching thick metal mask, and belongs to the technical field of micro electro mechanical system electroplating processes. Comprising the following steps: firstly, carrying out photoetching and patterning on the surface of a wafer by using positive photoresist; then, carrying out seed layer sputtering on the wafer subjected to pattern photoetching, and forming a to-be-electroplated region with a preset pattern through a stripping process; then, photoetching is carried out on the to-be-electroplated area through negative photoresist, and a thick photoresist layer with the thickness larger than that of a preset metal coating is formed; and finally, the electroplating area is electroplated, and the metal coating with the preset thickness is obtained. According to the method, the negative photoresist process is adopted, so that the transverse growth of the metal coating is effectively inhibited, the perpendicularity of the side wall of the metal coating is improved, and meanwhile, the damage to the surface of the wafer when the seed layer in the non-electroplating area is removed is avoided. The problems that mushroom-shaped protrusions are easily formed on the edge of a plating layer, crystal grains are coarsened and the like in the electroplating process of an existing electroplating method are solved.

The invention relates to the technical field of manufacturing of micro electro mechanical systems, in particular to a metallization method of a micro-hemispherical harmonic oscillator for trimming after assembly, which comprises the following steps of: establishing a micro-hemispherical harmonic oscillator structure model, simulating and calculating modal parameters of the harmonic oscillator; calculating an influence rule of the trimming width and the trimming depth on frequency splitting of the micro-hemispherical harmonic oscillator model by adopting finite element software to obtain a relation curve of trimming quality and frequency splitting change; measuring the resonant frequency f and the frequency cracking f of the working mode of the harmonic oscillator to be processed, estimating the removal mass required by the corresponding frequency cracking according to the calculated relation curve, carrying out mass trimming to obtain a relation curve of the actual removal mass and the frequency cracking, and confirming the minimum width wmin required by the actual trimming; and removing the film layer with the ring width of wmin by adopting laser. According to the invention, quality trimming is carried out on the premise of not influencing the capacitance value of the harmonic oscillator, and driving and detection gain errors caused by quality trimming are reduced.

The technology described herein is directed towards a metasurface arranged with unit cells for narrowband sound absorption, in which the unit cells are based on Helmholtz resonators that can have their resonant frequencies adjusted via MEMS actuators. A sound absorbing unit-cell is designed and constructed based on a general resonance frequency, and includes a neck portion and air chamber dimensioned to resonate close to the desired resonance frequency and thereby inverse phase cancel corresponding narrowband frequencies of incoming sound waves. A moveable partition in the resonators, controlled by MEMS actuators, facilitates changing of the resonators' air cavity dimensions, to adjust the resonant frequencies to cancel acoustic waves of different frequencies corresponding to noise, which can change over time. The unit cells can be distributed as part of a metasurface, which can be positioned proximate to a noise source to phase cancel the noise.

Laser-scanning systems for augmented reality glasses displays and LiDAR (light detection and ranging) use photonic integrated circuits to generate multiple collimated (or low-divergence) modulated laser beams. Laser light is guided on the photonic chip, expanded, and emitted from the surface of the chip (using grating coupler devices) as one or more large-diameter (e.g., millimeter-scale), collimated or low-divergence beams. These gratings may be integrated onto movable microelectromechanical systems (MEMS) plates to steer the beam along two angular axes. Alternatively, the beam(s) from the grating(s) may be steered by a separate MEMS mirror integrated onto the photonic chip or on another chip. Such systems enable multi-beam laser scanning systems without collimation lenses, reducing the size and packaging complexity of high-performance laser scanning systems for augmented reality glasses and LiDAR.

A visualization system for dynamically visualizing an eye includes a laser module operable for outputting a primary laser beam along a beam axis, a beam splitter positioned in the beam axis and configured to direct a first beam portion along the beam axis and a second beam portion along a detection axis that is orthogonal to the beam axis. A microelectromechanical system (MEMS) scanner is arranged on the beam axis and configured, in response to the first beam portion, to output a scanning laser along a visualization path. An avalanche photodiode (APD) detector receives the second beam portion. A 4F correlator optical system has a spatial filter arranged along the visualization path. An optional optical flat may be disposed between the eye and the 4F correlator optical system to achieve stereo parallax.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

Microelectromechanical systems (MEMS) have found widespread applications across biotechnology, medicine, communications, and consumer electronics. These are typically one-dimensional MEMS (e.g. rotation, linear translation on a single axis) or two-dimensional MEMS (e.g. linear translation in two directions in the plane of the MEMS). It would be beneficial therefore for designers of components, circuits, and systems to exploit MEMS elements that produce both out-of-plane and in-plane motion thereby allowing for novel two-dimensional and three-dimensional MEMS micropositioners.

MEMS device (10) with a movable displacement element (12) and a drive device (14) for driving the movable displacement element (12), wherein the drive device (14) has at least one drive electrode (16), characterized in that the drive electrode (16) is segmented and at least one functional electrode (18) is provided for measuring the deflection of the displacement element (12).

A circuit for a MEMS gyroscope having at least one mass excitable to an oscillatory motion. The circuit includes: a signal generator circuit for generating a periodic test signal, the test signal being applicable to a first MEMS-side signal input of a driver circuit and / or to a second MEMS-side signal input of a readout circuit and causing a response measurement signal, so that the phase offset between a demodulation signal and the response measurement signal can be determined on the basis of the response measurement signal. A corresponding method for operating a MEMS gyroscope is also described.

Disclosed herein are a microelectromechanical system (MEMS) devices comprising a first electrode layer, an aluminum nitride based piezoelectric layer, and a second electrode layer. The aluminum nitride based piezoelectric layer comprises a piezoelectric material of formula AlxScyYbzN, wherein x+y+z=1. Also disclosed are acoustic components comprising the piezoelectric material.

A device for switching a differential signal includes an input port, a first output port, a second output port, a first micro electromechanical system (MEMS) switch, and a second MEMS switch. The first and second MEMS switches selectively couple the input port to either the first output port or the second output port. The differential input port is separated into two single-ended paths. One single-ended path is switched through the first MEMS switch, and the other single-ended path is switched through the second MEMS switch. The single-ended paths are spatially matched with respect to length and orientation, and are at least partially distributed through at least two layers of electrical conductors, with adjacent layers of electrical conductors separated by electrically insulating layers.

Silicon Photonics is a candidate technology for adding integrated optics functionality, either passive or active optical waveguides) to integrated circuits by leveraging the economies of scale of the CMOS microelectronics industry and using materials for the waveguide core such as silicon nitride (SiXNY) and silicon oxynitride (SiOXN1-X) for example. Microelectromechanical systems (MEMS) provide for movable platforms relative to the substrate allowing additional functionality to be added to a silicon circuit but also Silicon Photonics. Accordingly, by combining “fixed” waveguides formed upon the substrate with “movable” waveguides formed upon one or more movable platforms the inventors have established a series of Integrated Optics MEMS (IO-MEMS) based on Silicon Photonics. Such IO-MEMS include optical switches, optical attenuators, optical gates, optical switch matrices, configurable wavelength division multiplexer / demultiplexer devices, etc. exploiting both platforms and deformable beams.

The invention discloses an MEMS (Micro Electro Mechanical System) sandwich accelerometer, and relates to the technical field of MEMS, a lower electrode structure layer comprises lower electrode bulk silicon, and a bottom insulating layer, a wiring layer, a surface insulating layer and a lower electrode bonding ring which are sequentially arranged on the front surface of the lower electrode bulk silicon from bottom to top; the lower electrode bonding ring is used for bonding the lower electrode structure layer and the movable mass block silicon; a lead hole is formed in the surface insulating layer; the lower electrode bonding ring is connected with the wiring layer through a lead hole; the surface insulating layer is provided with a second bonding pad and is connected with the wiring layer through a lead hole; the lower electrode bonding ring horizontally leads an electric signal of the movable mass block silicon to the second bonding pad through the wiring layer; the upper electrode structure layer comprises upper electrode body silicon, and a back insulating layer and an upper electrode bonding ring which are sequentially arranged on the back surface of the upper electrode body silicon from top to bottom; the upper electrode bonding ring is used for bonding the upper electrode structure layer and the movable mass block silicon; the lower electrode bonding ring and the upper electrode bonding ring are metal bonding rings, and the three layers of silicon structures are bonded through metal eutectic. According to the invention, horizontal leading-out of the signals of the movable structure layer is realized, bonding pads on planes with different heights are prevented from being manufactured after bonding of the multilayer structure, and the process difficulty is reduced.

In a microelectromechanical system (MEMS) sensor, movement of a component such as a proof mass due to a force of interest is sensed capacitively. A capacitance-to-voltage (C2V) converter receives a capacitance signal from the sensor and outputs a signal that includes an offset in addition to a signal of interest. The output signal is analyzed to identify the offset portion of the output signal and to modify values one or more variable capacitors coupled to the C2V input reduce the offset portion of the output signal.

In some embodiments, a semiconductor structure includes a semiconductor layer, a micro-electromechanical systems structure defined in the semiconductor layer, and a metallization structure bonded to the semiconductor layer. The metallization structure includes a sensing pad, a first barrier layer comprising a first material under the sensing pad, a conductive pad, and a second barrier layer under the conductive pad. The second barrier layer includes a first layer comprising the first material and a second layer comprising a second material different than the first material over the first layer. The second barrier layer is compressively stressed, and hillocks are defined in the conductive pad.

Encapsulated MEMS devices and methods of fabrication with wafer-level fabrication processes are described which address small molecule diffusion into hermetically sealed cavities. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed during a back-end-of-the-line (BEOL) processing over a cap wafer including a planarized surface formed during a via reveal griding operation. In some configurations a small molecule barrier layer is not formed over the planarized surface during BEOL processing in order to allow an escape path for small molecules. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed on a bottom side of a cap wafer prior to bonding the cap wafer to a device wafer during wafer-level fabrication.

The present disclosure relates to ultra-high density, low profile edge card connectors. The present disclosure increases interconnect density by using a different technology approach than currently used in the industry (stamping and molding). By using a microelectromechanical system (MEMS) technology approach, better geometry and impedance control is achieved to reduce impedance discontinuities and feature sizes. In addition, the present disclosure also includes low connector insertion force, no contact wiping, and precise alignment mechanisms between the connector contacts and the connector contacts on the mating substrate.

The present disclosure relates to a method for manufacturing a layered structure for a MEMS apparatus, a layered structure which is a layered structure produced by the method, and a MEMS apparatus 200 which comprises such a layered structure. For the layered structure or the MEMS apparatus 200, an exemplary starting substrate is used in the manufacturing process, which forms the mechanically effective functional layer 10, wherein the mechanically effective functional layer 10 comprises a ferroelectric and / or piezoelectric material.

A method is disclosed of fabricating a MEMS device that includes one or more wafers configured as pump or valve. The pump or valve includes an inlet port to receive fluid and an outlet port to release the fluid within the pump or valve. The method comprises growing silicon dioxide on a silicon layer of the one or more wafers to form a silicon dioxide layer on the silicon layer, depositing silicon nitride on the silicon dioxide layer of the one or more wafers to form a silicon nitride layer on the silicon dioxide layer, spinning a front side to create a pattern thereon defining an area for the pump or valve, dry etching the one or more wafers at the area for the pump or valve to remove the silicon dioxide and silicon nitride layers to define an opening for the pump or valve.

The invention discloses a V-Ti-Ni shape memory alloy with high elasticity modulus and high hardness and a preparation method of the V-Ti-Ni shape memory alloy. The preparation method comprises the steps of raw material proportioning, V-Ni pre-alloy smelting, vacuum induction smelting and argon protection pouring, multi-pass hot forging and hot rolling and fine cold drawing, and particularly, 7-9 at% of vanadium element is introduced, so that the diameter phi of the prepared V-Ti-Ni shape memory alloy wire is 0.10-0.50 mm. According to the V-Ti-Ni shape memory alloy prepared through the method, the elasticity modulus at the room temperature reaches 100-110 GPa, the microhardness is 320-360 HV, the phase transition temperature regulation and control range of the NiTi-based shape memory alloy is widened, and the structural rigidity, abrasive resistance, plasticity and cycle stability of the V-Ti-Ni shape memory alloy material are remarkably improved. The V-Ti-Ni shape memory alloy prepared through the method is mature in process route, can be produced in batches and is suitable for precise elastic components in medical instruments, micro electro mechanical systems, thermal actuators and spaceflight structures.

This application provides an earphone and a terminal device. The earphone includes a housing with a cavity structure inside, and a sound outlet communicating with the cavity structure. A first sound unit, a second sound unit, and a third sound unit are disposed within the cavity structure, and the third sound unit is a microelectromechanical system (MEMS) unit. The sound frequency of the second sound unit is greater than but less than the sound frequency of the first sound unit. The third sound unit, being a MEMS unit, is located between the first sound unit and the sound outlet. By incorporating the first sound unit, the second sound unit, and the MEMS unit within the earphone, the output bandwidth of the earphone can be fully guaranteed, achieving better full-frequency coverage and superior sound quality.

Provided is an acoustic processing apparatus in which a microelectromechanical systems (MEMS) device is effectively arranged. The acoustic processing apparatus includes an enclosure, a sound duct extending from the enclosure, and a MEMS device housed in the sound duct.

This invention discloses an apparatus, system, and method for optimizing the geometry of a beam array in a multi-beam detection tool. In some embodiments, a microelectromechanical system (MEMS) may include a first column of apertures; a second column of apertures positioned below the first column of apertures; a third column of apertures positioned below the second column of apertures; and a fourth column of apertures positioned below the third column of apertures; wherein the first, second, third, and fourth columns are parallel to each other in a first direction; the first and third columns are offset from the second and fourth columns in a second direction perpendicular to the first direction; the first and third columns have a first length; the second and fourth columns have a second length; and the first length is greater than the second length in the second direction.

The invention discloses temperature-sensitive fluorescent coating ink based on quantum dots as well as a preparation method and application of the temperature-sensitive fluorescent coating ink. The ink is prepared from quantum dots, a polymer substrate material and a solvent, a temperature-sensitive fluorescent coating is formed on the surfaces of electronic components including an electronic chip, a micro-fluidic chip, an energy storage battery, a sensor and a micro-electro-mechanical system through a dispensing method, a spin-coating method, a blade coating method or a spraying method, and a uniform fluorescent film is prepared on the surface of the chip; exciting the fluorescent film by using laser; and according to a pre-calibrated temperature-spectrum relation curve, reconstructing a micro-scale two-dimensional or three-dimensional temperature distribution diagram of the chip in a working state. According to the invention, non-contact and high-resolution real-time temperature imaging of a chip working state microcell is realized, and a key technology is provided for temperature anomaly detection, thermal management optimization and failure analysis of a miniature electronic component.

A micro-electromechanical system (MEMS) component, comprising a MEMS chip (11) and a magnet apparatus (12). The MEMS chip (11) comprises: a movable part (111), a fixed frame (112), a cantilever (113), and a sensor (114), the movable part (111) being connected to the fixed frame (112) by means of the cantilever (113). The magnet apparatus (12) is used for generating a magnetic field, and the movable part (111) is located in the magnetic field. The sensor (114) is disposed on the movable part (111), and the sensor (114) comprises a first connection end (a), a second connection end (b), a third connection end (c) and a fourth connection end (d), which are sequentially adjacent. The first connection end (a) is connected to a first feedback signal line (s1), the third connection end (c) is connected to a second feedback signal line (s2), the first feedback signal line (s1) and the second feedback signal line (s2) are used for transmitting a feedback signal of the sensor (114), and the feedback signal is a voltage signal indicating the angle or position of the MEMS component. The first feedback signal line (s1) and the second feedback signal line (s2) are arranged along a first direction of the movable part (111). The described MEMS device reduces feedback crosstalk, and improves precision. Also provided is a laser device.

A semiconductor device (100) comprising: an interconnect structure (114) disposed over a semiconductor substrate (104); a dielectric structure (130) disposed over the interconnect structure (114); a plurality of cavities (148) disposed in the dielectric structure (130) and arranged in an array (502) having rows (504) and columns (506); a MEMS substrate (136) disposed over the dielectric structure (130), the MEMS substrate (136) defining upper surfaces of the cavities (148), the MEMS substrate (136) comprising a plurality of movable membranes (150), the movable membranes (150) overlying the respective cavity (148); and a plurality of flow connection channels (152) arranged in the dielectric structure (130), wherein the upper surfaces of the flow connection channels (152) are defined by the MEMS substrate (136),and wherein each of the flow connection channels (152) extends laterally between two adjacent cavities (148) of the cavities (148) such that all cavities (148) are in flow communication with one another, wherein the semiconductor device (100) comprises a buffer tank (1002) arranged in the dielectric structure (130) and arranged vertically between the semiconductor substrate (104) and the MEMS substrate (136), wherein the dielectric structure (130) at least partially defines side walls of the buffer tank (1004), wherein the semiconductor device (100) comprises a buffer tank channel (1004) extending laterally from the buffer tank (1004) to one of the cavities (146), wherein the semiconductor device (100) comprises a sealing structure (1006) extending vertically through the MEMS substrate (136) and into the buffer tank channel (1004), wherein the Sealing structure (1006) seals the buffer tank (1002) against the cavity (148),so that the buffer tank (1002) is not in flow connection with the cavity (148).,