141results about How to "High data density" patented technology

The preferred embodiment of the present invention provides a write head having an interlaced conductor coil winding and method of fabrication. The interlaced winding of the present invention may have alternating turns of a first and a second coil. In the preferred embodiment, the side walls of successive coil turns are separated by an ultra thin inorganic insulation which defines the distance between successive turns of the first and second coil. In one method of fabrication, a conductive seed layer is deposited on a generally planar insulative surface, a resist mask is formed on the seed layer, and a conductive material deposited on the exposed seed layer to form the turns of the first coil. The masked portions of the seed layer are removed, after resist mask removal, to electrically isolate the turns of the first coil. The inorganic insulation may be formed in a layer conformal with the first coil. The second coil is formed between the turns of the first coil. A seed layer and mask may be used to facilitate second coil deposition. Etching, or planarization, may be used to electrically isolate the turns of the second coil. A capping layer may be formed over any exposed conductor material to insulate the winding from an upper pole structure or other overlying structure. Embodiments of the present invention may have multiple layers of conductor winding having some conventional, or all interlaced coil structure.

A memory device configurable for independent double gate cells, storing multiple bits per cell includes multilayer stacks of conductive strips configured as word lines. Active pillars are disposed between pairs of first and second stacks, each active pillar comprising a vertical channel structure, a charge storage layer and an insulating layer. The insulating layer in a frustum of an active pillar contacts a first arcuate edge of a first conductive strip in a layer of the first stack and a second arcuate edge of a second conductive strip in a same layer of the second stack. A plurality of insulating columns serve, with the active pillars, to divide the stacks of word lines into even and odd lines contacting opposing even and odd sides of each active pillar. The active pillar can be generally elliptical with a major axis parallel with the first and second conductive strips.

A memory device configurable for independent double gate cells, storing multiple bits per cell, includes multilayer stacks of conductive strips configured as word lines. Active pillars are disposed between pairs of first and second stacks, each active pillar comprising a vertical channel structure extending from an underlying bounded conductive layer, a charge storage layer and an insulating layer. The insulating layer in a frustum of an active pillar contacts a first arcuate edge of a first conductive strip in a layer of the first stack and a second arcuate edge of a second conductive strip in a same layer of the second stack. The conductive strips can comprise a metal. The active pillar can be generally elliptical with a major axis parallel with the first and second conductive strips.

Implantable medical devices, including stents, grafts, covered stents, catheters, patches or the like having regions of the device which are functionalized employing microelectromechanical systems that are capable of acting as electromechanical sensors or biosensors in response to either an endogenous event, such as tissue growth, biochemical binding events, pressure changes, or respond to an externally applied stimulus, such as RF energy, to cause a change in the state of the device, such as to induce an oscillation signal which may be interrogated and interpreted external the body or may generate an induced electrical or electromagnetic potential in the device to activate micromotors to effect a geometric change in the device.

A storage device equipped with NAND flash memory and method for storing information thereof includes a SLC processing structure to provide fast information access and improve processing performance and a MLC processing structure to increase data density of each storage unit and reduce the cost and size of each unit of information. The data storing method includes storing important information such as operating system programs, application programs and information that have been accessed frequently in the SLC processing structure, and storing ordinary information in the MLC processing structure to reduce the cost and size of each unit of information.

Methods and systems for data recording and reading for increasing overall tape data storage density, especially for data written in azimuth style. The principles of the invention provide servo formats and systems that allow accurate on track guidance for higher density applications and that are less sensitive to off track error. Preferred embodiments of the invention offer servo formats and systems of the invention that allows positive track and group identification at the beginning, end, and optionally periodically along the length of a tape.

The invention is in the field of Computer Engineering and can be used in memory devices for various computers, specifically in developing a universal memory system with high data reading and writing speed along with capabilities for long term storage and high information density, as well as in developing video and audio equipment of a new generation, in developing associative memory systems, and in creating synapses (electric circuit elements with programmable electric resistance) for neuronal nets. The lack of such an element holds back the development of true neuronal computers. The invention is based on the task of creating an essentially new kind of memory cell that would allow to store several bits of data, would have fast resistance switching and require low operating voltage but at the same time would allow to combine its manufacturing technology with the modern semiconductor manufacturing technology. FIG. 6 shows an implementation option of the claimed memory cell containing two continuous aluminum electrodes 1 and 2 between which there is a multilayer functional zone consisting of one active layer 3, one barrier layer 4 and one passive layer 5. This structure of the functional zone allows to change electric resistance of the active zone and/or form highly conductive areas or lines with metallic conduction in the active zone under the influence of the external electric field and/or its light emission on the memory cell and to retain its electric resistance for long periods of time without applying external electric fields. The memory cell is advantageously distinctive from the currently used single bit memory elements, in that it can store several bits of information. The data storage time depends on the memory cell structure, the material used for the functional zone and the writing mode. It can vary from several seconds (can be used to build dynamic memory) to several years (can be used for building long term memory, such as Flash memory). It is possible to create universal memory that can work in both dynamic and long-term modes, depending on the data-writing mode.

A spin torque oscillation magnetoresistive sensor for measuring a magnetic field. The sensor uses a change in precessional oscillation frequency of a magnetization of a magnetic layer to determine the magnitude of a magnetic field. The sensor can include a magnetic free layer, a magnetic pinned layer and a non-magnetic layer sandwiched therebetween. Circuitry is connected with these layers to induce an electrical current through the layers. Spin polarization of electrons traveling through the device causes a spin torque induced precession of the magnetization of one or more of the layers. The frequency of this oscillation modulates in response to a magnetic field. The modulation of the oscillation frequency can be measured to detect the presence of the magnetic field, and determine its magnitude.

A system for remotely controlling, acquiring and monitoring the acquisition of seismic data. The system includes remote equipment for collecting seismic data and for transmitting and receiving communication signals to and from a remote location. The system also includes local equipment for transmitting and receiving communication signals to and from the remote location. In this manner, the collection of seismic data at remote locations can be controlled and monitored locally.

A mass storage device having at least one flash memory device and DRAM or SRAM-based cache within a package, and which comprises co-processor means within the package for performing compression and decompression of cached data before writing the cached data to the flash memory device.

The optical storage medium comprises a substrate layer and a data layer with a mark/space structure arranged in tracks, wherein a sequence of marks of a first track have a first width, and a sequence of marks of a neighboring track have a second width being different from the first width. The optical storage medium is in particular an optical disc, on which the tracks are arranged as spirals, circular rings or segmented circular rings.

Methods, devices, and media for improving data storage reliability and efficiency comprising: creating at least one logical storage drive comprising a plurality of logical blocks; mapping the at least one logical storage drive to at least one physical storage drive based on many-to-one mapping or one-to-many mapping, wherein the at least one physical storage drive comprises a plurality of physical blocks; and applying a compression algorithm to data held in one or more logical blocks, aggregating units of the data, and storing the units of the data into one or more physical blocks.

A method of real time dynamic CD control in a system for patterning resist coated wafers. The method includes lithographically patterning the resist coated wafers using predetermined exposure dose and focus settings. The method further includes obtaining CD metrology data from test areas on the patterned wafers, where different groups of test areas are selected for two or more of the patterned wafers. A CD metrology data map is constructed using the CD metrology data, adjusted exposure dose and/or focus settings are established using the CD metrology data, and additional wafers are then patterned.

Methods, devices, and media for improving data storage reliability and efficiency comprising: creating at least one logical storage drive comprising a plurality of logical blocks; mapping the at least one logical storage drive to at least one physical storage drive based on many-to-one mapping or one-to-many mapping, wherein the at least one physical storage drive comprises a plurality of physical blocks; and applying a compression algorithm to data held in one or more logical blocks, aggregating units of the data, and storing the units of the data into one or more physical blocks.

The invention discloses a non- volatile memory device and a programming method; the non- volatile memory device comprises a memory unit array of multilayer memory units arranged in physic pages; the programming method for the non- volatile memory device comprises: receiving first data and dividing the first data according to a single bit page capacity of the physic pages so as to form the divided first data; programming the divided first data serving signal bit data to a plurality of physic pages; receiving second data and programming the second data serving multi bit data to a selected physic page of the plurality of physic pages, wherein the second data is simultaneously programmed to the multilayer memory units of the selected physic page.