Non-volatile memory device and programming method

A non-volatile and programming method technology, applied in the field of non-volatile storage devices and programming, can solve the problem of increasing overall data density and achieve the effect of enhancing data density

Active Publication Date: 2014-02-12
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Regardless, the replacement of SLC by providing MLC for non-volatile memory cell arrays has resulted in a dramatic increase in overall data density

Method used

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  • Non-volatile memory device and programming method
  • Non-volatile memory device and programming method

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Embodiment Construction

[0041] Certain embodiments of the inventive concept will be described in some additional detail below with reference to the accompanying drawings. The inventive concept may, however, be embodied in many different forms and should not be construed as limited to only the embodiments shown. Rather, these embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. Accordingly, conventionally understood processes, elements and techniques may not be described in detail with respect to some of the illustrated embodiments. Unless stated otherwise, the same reference numbers and labels are used throughout the drawings and written description to refer to the same or like elements.

[0042] It should be understood that although the terms "first", "second", "third" etc. may be used herein to describe various elements, components, regions, layers and / or sections, these ele...

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Abstract

The invention discloses a non- volatile memory device and a programming method; the non- volatile memory device comprises a memory unit array of multilayer memory units arranged in physic pages; the programming method for the non- volatile memory device comprises: receiving first data and dividing the first data according to a single bit page capacity of the physic pages so as to form the divided first data; programming the divided first data serving signal bit data to a plurality of physic pages; receiving second data and programming the second data serving multi bit data to a selected physic page of the plurality of physic pages, wherein the second data is simultaneously programmed to the multilayer memory units of the selected physic page.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0086805 filed on Aug. 8, 2012, the subject matter of which is incorporated herein by reference. technical field [0003] The inventive concept relates to a semiconductor memory device and a programming method thereof. More particularly, the inventive concepts relate to semiconductor memory devices incorporating multi-level nonvolatile memory cells and programming methods thereof. In certain embodiments, the inventive concept relates to a semiconductor memory device having a three-dimensional (3D) memory cell array of nonvolatile memory cells and a programming method thereof. Background technique [0004] Semiconductor memory devices can generally be classified as volatile or nonvolatile according to their operational properties. Volatile memory devices lose stored data in the absence of applied power, while non-volatile memory devices retain ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/24G11C16/06
CPCG11C16/10G11C11/5628G11C16/3459
Inventor 郭东勋
Owner SAMSUNG ELECTRONICS CO LTD
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