Non-volatile memory device and programming method

Abstract

The invention discloses a non- volatile memory device and a programming method; the non- volatile memory device comprises a memory unit array of multilayer memory units arranged in physic pages; the programming method for the non- volatile memory device comprises: receiving first data and dividing the first data according to a single bit page capacity of the physic pages so as to form the divided first data; programming the divided first data serving signal bit data to a plurality of physic pages; receiving second data and programming the second data serving multi bit data to a selected physic page of the plurality of physic pages, wherein the second data is simultaneously programmed to the multilayer memory units of the selected physic page.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0086805 filed on Aug. 8, 2012, the subject matter of which is incorporated herein by reference. technical field [0003] The inventive concept relates to a semiconductor memory device and a programming method thereof. More particularly, the inventive concepts relate to semiconductor memory devices incorporating multi-level nonvolatile memory cells and programming methods thereof. In certain embodiments, the inventive concept relates to a semiconductor memory device having a three-dimensional (3D) memory cell array of nonvolatile memory cells and a programming method thereof. Background technique [0004] Semiconductor memory devices can generally be classified as volatile or nonvolatile according to their operational properties. Volatile memory devices lose stored data in the absence of applied power, while non-volatile memory devices retain ...

AI Technical Summary

Problems solved by technology

Regardless, the replacement of SLC by providing MLC for non-volatile memory cell arrays has resulted in a dramatic increase in overall data density

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