The utility model provides a
plasma etching device, which is characterized in that a
gas supply structure introduces process gas into a
branch gas inlet structure in a process cavity through a
branch pipeline, and the
branch gas inlet structure is provided with gas orifices; and the second ICP
coil structure is provided with more than two control branch coils with independently adjustable
radio frequency power and a bearing structure which is fixed below the branch air inlet structure and is used for bearing the control branch coils. According to the utility model, the
plasma density at the edge of the
wafer is finely adjusted by adjusting the
radio frequency power of each control sub-coil, so that the
plasma etching uniformity at the edge of the
wafer is improved; meanwhile, a plug and a switch structure in the branch air inlet structure are matched to adjust the
plasma etching uniformity of the edge of the
wafer; in addition, the angle adjusting structure adjusts the angle of the air injection surface, and the adjusting freedom degree of the wafer edge
plasma density is improved; and finally, the
central symmetry distribution of the branch coils and the air injection holes is controlled to adapt to the hot spot area distribution needing to be adjusted for the wafer edge
plasma etching uniformity, and the wafer edge
plasma etching uniformity is further improved.