High-frequency coil structure capable of simultaneous producing four silicon cores and other crystal material

Abstract

The invention discloses a high-frequency coil structure capable of simultaneously producing four silicon cores and other crystalline materials, and relates to the technical field of the high-frequency coils. The high-frequency coil structure comprises splitter boxes (14) for guiding current (15), and four inner bores one inner bore (8) of which is arranged at the middle part of the high-frequency coil and three inner bores of which are evenly distributed around the inner bore at the middle part; an oblique opening (13) arranged on one side of a current delivery and cooling water delivery copper pipe A(11) and a current delivery and cooling water delivery copper pipe B(12) is in through connection with the inner bore at the middle part; and the splitter boxes extend outwards to the position between every two inner bores except for the oblique opening from the inner bore at the middle part. The oblique opening is connected with the inner bore at the middle part, and the two splitter boxes extend upwards to the position between two inner bores without the oblique openings from the inner bore at the middle part, which causes the current to evenly surround the four inner bores for running under the current splitting action of the splitter boxes while the current is running, thus realizing the purpose that the current is evenly distributed around the four inner bores.

Description

Technical field: [0001] The invention relates to the technical field of high-frequency coils, in particular to a new type of coil that can distribute current evenly around the inner hole, heat silicon cores or other crystal materials evenly through the current, and produce four silicon cores and other crystal materials at the same time. High frequency coil structure. Background technique: [0002] At present, silicon cores are used in a huge amount in China; in the existing process of producing silicon cores, monocrystalline silicon and other material crystal zone melting methods, most of them use a monocular high-frequency coil, and its working principle is as follows: When working, pass high-frequency current to the high-frequency coil, so that the high-frequency coil generates current to inductively heat the raw material rod, and the upper end of the heated raw material rod forms a melting zone, and then inserts the crystal into the melting zone, and slowly lifts the crys...

AI Technical Summary

Problems solved by technology

[0006] After two years of use, the current running around the inner hole failed to achieve the expected purpose. As shown in the above two patent application documents, when the current runs around each inner hole, the inner hole in the middle will appear There are many currents running, and the surrounding current of the other three inner holes is affected by the principle of high-frequency current operation, so that the temperature of the middle inner hole is much higher than that of the lower and upper inner holes on both sides (that is, the current takes a shortcut) due to the current The phenomenon of taking shortcuts, the result is that the diameter of the lifted seed crystals is very different, resulting in an increase in the number of defective products.

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