41 results about "Crystalline materials" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

A toner comprising a toner particle comprising a binder resin, a crystalline material, and a silica particle, wherein a number average particle diameter D1 of the silica particle comprised in the toner particle is 400 to 3000 nm; the silica particle has a pointed portion; and the crystalline material comprises a compound having an ester group.

The invention relates to a composite structure comprising: - a seed layer of single-crystal III-V composite material extending in a principal plane, - a support substrate of crystalline material, on which the seed layer is deposited via a bonding interface, the support substrate comprising a peripheral rim devoid of a seed layer, the peripheral rim extending around an edge of the seed layer in the principal plane, - an intermediate layer of amorphous material, disposed between the seed layer and the support substrate and present on the peripheral rim, - at least one trench present in the peripheral rim, extending, along an axis normal to the principal plane, through the intermediate layer to the support substrate, or even into the support substrate, the trench being located less than 100 micrometers from the edge in the principal plane. The invention also relates to a method for manufacturing said structure.Figure to be published with the abbreviation: -.

This invention discloses a polyimide film and its preparation method. The polyimide film is a crystalline material with grains oriented along directions parallel to the film surface plane. Specifically, the crystal orientation factor in the MD direction is 0.08–0.65, and the crystal orientation factor in the TD direction is also 0.08–0.65. The polyimide film exhibits a dielectric constant less than or equal to 3.1 at 10 GHz, a dielectric loss less than or equal to 0.010 at 10 GHz, a dielectric constant less than or equal to 3.1 at 30 GHz, and a dielectric loss less than or equal to 0.012 at 30 GHz. The polyimide film possesses characteristics such as low dielectric constant, low dielectric loss, and low moisture absorption, and the crystal orientation in the MD / TD directions is individually controllable.

This invention discloses a discrete element method, system, medium, and equipment for simulating equivalent crystalline materials, relating to the field of numerical simulation of rock mechanics. The method includes: converting granite images into binary images using a binarization method to identify various minerals within the binary images; determining the size data of various minerals in the binary images based on a particle size statistical algorithm; extracting micromechanical parameters using nanoindentation experiments combined with a trial-and-error method, and constructing multiple sets of equivalent crystalline models based on the mineral size data; dividing each set of equivalent crystalline models into multiple regions using a Brazilian splitting experiment; determining the optimal magnification for each region of each set of equivalent crystalline models by magnifying from non-critical regions to critical regions using a magnification algorithm, obtaining differentiated equivalent crystalline models; and performing Brazilian splitting numerical simulation using these differentiated equivalent crystalline models to obtain simulation results.

The application provides an ultramicroporous zinc-based MOF material, a preparation method thereof and application thereof in ammonia adsorption, and belongs to the technical field of crystalline materials. The material is an ultramicroporous zinc-based metal organic framework material with a three-dimensional periodic network structure, which is formed by coordination self-assembly of Zn 2+ ions, squarate ligands and triazoles ligands, wherein Zn 2+ ions exist in two coordination modes of hexa-coordinated octahedron and tetra-coordinated tetrahedron; the molecular formula of the material is [Zn2(C4O4)(C2H2N3)2], wherein C4O4 2‑ is a squarate ligand, and C2H2N3 ‑ is a triazole ligand. The application also provides application of the ultramicroporous zinc-based MOF material in ammonia adsorption. The MOF material has good stability, can maintain the integrity of the framework structure after being soaked in water for 7 days, and has good ammonia adsorption performance.

All-solid-state battery and method of manufacturing the same. The all-solid-state battery includes a multilayer structure, a first cover layer, and a second cover layer opposite the first cover layer. The multilayer structure includes a solid electrolyte layer including a solid electrolyte, a positive electrode layer provided on a first side of the solid electrolyte layer, a portion of the positive electrode layer extending to a first edge of the solid electrolyte layer, a first edge layer provided on an area of the first side of the solid electrolyte layer, a negative electrode layer provided on a second side of the solid electrolyte layer, and a second edge layer provided on an area of the second side of the solid electrolyte layer. Also, at least one of the first cover layer, the second cover layer, the first edge layer, or the second edge layer includes an oxide including a pyrochlore crystalline material.

Provided is a shock absorber in which trivalent chromium is used to achieve both high hardness and low frictional force at a high level without using hexavalent chromium which is suspected of causing damage to the human body and the environment, and a method for manufacturing the shock absorber.A shock absorber (100) of the present invention includes: a cylinder (1) which is filled with hydraulic oil (3); a piston rod (2) which is movable in the cylinder (1); and an oil seal (8) which is fixed to the cylinder (1) and slides on the piston rod (2), in which a hard layer mainly containing chromium obtained from a trivalent chromium plating bath is provided on a surface of the piston rod (2), and the hard layer contains both a crystalline material and an amorphous material, and also contains an additive other than chromium.

This description relates to a battery element comprising the following: - Electrodes including an anode and a cathode, and - An electrolyte comprising a crystalline material having the composition M2B2O5.x(HOH).y(NOH) between the electrodes. Here, M and N are alkali metals or hydrogen or a mixture of alkali metals or hydrogen, B is titanium, O and H represent elemental oxygen and hydrogen, respectively, and x and y are between 0 and 4 and indicate the presence of H+, OH-, and N+ ions that can move within the crystalline material. In particular, at least one type of ion among H+, OH-, N+, and M+ is mobile to move toward at least one of the electrodes within the crystalline material, and at least one of the electrodes is made of a material suitable for performing chemical interactions with at least one of the H+, OH-, N+, and M+ ions.

The application provides a Ce / Cu-MOF crystalline material, a preparation method and application, and relates to the technical field of materials.The chemical formula of the Ce / Cu-MOF material is: {[Cu6Ce2(MNA)6]·H2O·3DMA} n By coordinating and assembling Ce and Cu bimetallic nodes with thiol-containing pyridine carboxylic acid ligands, a multi-nuclear heterometallic organic framework structure with wide spectrum light response is successfully constructed.The material has simple preparation process, controllable reaction condition, good structural stability, and practical application prospect.

The application discloses a method for determining the Debye temperature of a crystal material, and comprises the following steps: collecting the isobaric heat capacity data C P (T) of a crystal material in a temperature range; P (T) of the crystal material, and finding the temperature T0 corresponding to the extreme point of C P (T) by derivation; P (T) of the crystal material, and calculating the isochoric heat capacity C P (T) of the crystal material according to a thermodynamic formula; V (T) of the crystal material according to a Debye isochoric heat capacity evaluation model; V (T) of the crystal material according to the extreme temperature T0; P (T0) determined according to the extreme temperature T0 and the isochoric Debye temperature θ V (T0) of T0, and the temperature closest to the isochoric Debye temperature θ (T0) is the Debye temperature of the material. The method for determining the Debye temperature of the crystal material is simple and easy to implement, and can provide strong support for rapid evaluation and accurate design of material performance in the material research and development process.

Direct thermal print media comprising side chain crystalline material are disclosed. The print media are substantially free of bis-phenols, and can retain color when subjected to light and / or temperatures ranging from, for example, −15° C. to 45° C. for long durations.

This invention belongs to the technical field of crystalline materials, and discloses a praseodymium-based complex crystalline material, its preparation method, and its fluorescence recognition application, with the chemical formula {[Pr(L 1.5 The compound is 2,2'-(2,3,5,6-tetramethyl-1,4-phenylene)bis(methylene)bis(sulfonyl)diethyl)benzoic acid. The preparation method involves dissolving Pr(NO3)3·6H2O, H2L, and the auxiliary uncoordinated ligand 1,4-bis(imidazol-1-yl)benzene in a DMF / ethanol / water mixed solvent, reacting at 90°C for 3 days, and then cooling to obtain plate-like crystals. This material is effective against Fe... 3+ It exhibits highly selective and sensitive fluorescence quenching response with a quenching rate of 99.8%; it can specifically recognize ethoxyquinoline (fluorescence enhancement) and 2,4-dichlorophenoxyacetic acid (fluorescence quenching); it can specifically recognize the antibiotic oxytetracycline with a fluorescence quenching rate exceeding 99%.

Capsule for beverage preparation comprising a core material and a shell, wherein the core material contains crystallizable substances. The shell comprises a crystallization inhibitor and / or the shell is hydrophobized.

The application discloses a kind of Ni doped nano SnO2 semiconductor HCHO sensing materials and preparation method and application thereof, and the preparation method of sensing material includes the following steps: step one, Sn salt-Ni salt solution is configured;Step two, using supercritical hydrothermal synthesis (CSHS) reaction device, Sn salt-Ni salt solution is contacted with supercritical water and crystallization is generated nano doped oxide, and reaction liquid is discharged and collected after cooling, and the crystalline material is separated, i.e. the Ni doped nano SnO2 semiconductor HCHO sensing material of the application.The Ni doped nano SnO2 semiconductor HCHO sensing material prepared by the method of the application has good structural consistency and excellent sensing performance.

Disclosed is a supramolecular polyhedron comprising 12 identical macrocyclic molecules wherein the macrocyclic molecules interact via 144 C-H hydrogen bonds, including 24 [C-H... F], 48 [C-H... O], and 72 [C-H... Pi]. A supramolecular assembly, a composite system, a crystalline material, and a porous material are also disclosed. The invention further discloses application of the supramolecular polyhedron, the supramolecular assembly and the composite system. Further, the invention discloses a preparation method.

Transistor structures with silicon source and drain semiconductor material that is protected from a backside silicon subfin material removal process by an intervening barrier material layer. A source / drain barrier material layer may comprise a crystalline material, such as SiGe, grown on the subfin prior to growth of the source / drain material. Optionally, a growth mask may be deposited over channel material before growing source / drain barrier material layer to avoid a heterojunction between channel and source / drain semiconductor materials. Alternatively, a source / drain barrier material layer may comprise an amorphous dielectric material deposited on the subfin prior to growth of the source / drain material. Following frontside processing, a workpiece may be inverted and subfin material removed selectively over the source / drain barrier material layer.

The application relates to the technical field of centrifugal pumps, in particular to an energy-saving high-temperature-resistant centrifugal pump capable of conveying crystallized materials, which comprises a motor, a support and a pump body, and further comprises an inner rotor assembly, an outer rotor assembly, a jacket assembly and a flow guiding part; the inner rotor assembly is connected with the pump body and is used for driving the pump body to convey liquid; the outer rotor assembly is connected with the motor and transmits mechanical energy of the motor to the inner rotor assembly through magnetic coupling. The flow guiding part driven by medium pressure is arranged, automatic switching of two working conditions is cleverly realized. When medium flows in the pump, the static pressure of the medium makes the flow resistance assembly open, the medium itself is allowed to flow through the bearing cavity for flushing and lubrication, meanwhile, the flushing liquid passage of the jacket assembly is closed, so that pollution of external flushing liquid to the conveying medium is avoided. When there is no medium in the pump, the medium channel is automatically closed and the flushing liquid passage of the jacket assembly is opened, external flushing liquid is used for flushing, cooling and anti-crystallization protection of the bearing.

The present application relates to the field of fluorescent sensing technology, and particularly relates to a Eu(III) metal organic framework crystalline material, a preparation method and application thereof. The Eu(III) metal organic framework crystalline material is formed by assembling a multi-nuclear Eu ion cluster and a polycarboxyl organic ligand, and an asymmetric structural unit thereof comprises a plurality of valence states of Eu ions, monodentate coordination water molecules and partially deprotonated H(DDODA) 3‑ ligands. The Eu(III) is in an octahedral coordination configuration, and the Eu(II) is in a nonahedral coordination configuration, and a trinuclear {Eu3(H2O)5(COO) 18} secondary structural unit is formed by chelation and bridging action of carboxyl oxygen atoms. The secondary structural unit is further connected to form a one-dimensional chain structure through bridging carboxyl of the ligand, and the one-dimensional chains are further connected through carboxyl not participating in bridging and pyridine / pyridine groups, and finally a stable three-dimensional metal organic framework structure is constructed. The Eu(III) metal organic framework crystalline material has good fluorescence properties and stability, and can be applied to the field of fluorescent sensing.

This invention provides a method for constructing ordered porous organic crystalline materials based on templates. This method utilizes supramolecular interactions such as hydrogen bonding, halogen bonding, and π-π interactions to successfully construct ordered porous structures, particularly ordered macroporous structures. This method innovatively solves the problem of achieving large-sized (diameter greater than or equal to 50 nanometers) ordered permanent pores in traditional (hydrogen-bonded) organic crystalline materials, while ensuring the material's excellent stability and ordered macroporous properties. The ordered porous (especially ordered macroporous) (hydrogen-bonded) organic crystalline materials constructed by this invention, due to their unique structure and properties, are expected to show broad application prospects in catalysis, biomedicine, and other fields.

A site-selective hydration strategy that enables site-selective atomic layer deposition (ALD). ALD is utilized to target specific locations on a crystalline material for deposition.

The application provides a kind of porous crystalline material and its preparation method and application as variable temperature luminescent material, belong to metal organic framework material technical field.The molecular formula is: C 25 H 21 NO8PLn, wherein Ln is europium ion or terbium ion.The material contains dynamic molecular rotor module ligand H3TPO, and the energy level of the lowest excited singlet state (S1) and triplet state (T1) can be elastically adjusted with temperature change, and this characteristic makes isomorphic materials Eu-PO and Tb-PO exhibit rare and completely opposite thermoluminescence behavior.The application not only provides a new idea for regulating the energy level of dynamic antenna to construct artificial intelligent luminescent material, but also opens up a new direction for developing high-performance X-ray scintillators based on Ln-MOFs.

This invention discloses a crystalline form of cimicifuga glycoside, its preparation method, and its uses. This crystalline form has good stability, higher solubility and bioavailability, and advantages in gut microbiota.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention relates to a composite structure comprising: - a seed layer made of a monocrystalline III-V compound material extending in a main plane, - a support substrate made of crystalline material, on which the seed layer is arranged, via a bonding interface, the support substrate comprising a peripheral perimeter without a seed layer, the peripheral perimeter extending around an edge of the seed layer in the main plane, - an intermediate layer made of amorphous material, arranged between the seed layer and the support substrate and on the peripheral perimeter, - at least one trench in the peripheral perimeter, extending, along an axis normal to the main plane, through the intermediate layer to the support substrate, or even into the support substrate, the trench being at least 100 micrometres from the edge in the main plane. The invention also relates to a method for manufacturing the structure.

An automatic grading and iron removal device for crystalline material crushing includes a housing with a support at the lower end. A sealing frame is located at the lower interior of the housing, with a conical inner wall and a smaller lower end. A drain pipe is located at the lower end of the housing. The housing is used to store an acidic solution. An acid washing hopper is placed inside the housing to hold the powdered material. Multiple perforations are formed on the outer periphery of the acid washing hopper. A lower sealing frame is located on the lower wall of the acid washing hopper, with a smaller lower end on its outer wall, and its outer periphery is tightly fitted against the inner wall of the sealing frame. During acid washing, the combination of the lower sealing frame and the sealing frame allows the acidic solution to remain within the housing, facilitating the acid washing operation. After acid washing is complete, the acid washing hopper can be lifted for easy removal of the powdered material. A pair of top covers are provided at the top of the housing to prevent acid evaporation and environmental pollution during the acid washing process.

This invention discloses a slope-gradient cutting simulation method for complex surfaces of crystalline materials. This method utilizes a slope function to define the cutting path, breaking away from the constraints of traditional constant depth-of-cut simulation. It can accurately simulate the entire process of tool entry, exit, and variable load during the machining of complex structures such as microlens arrays, significantly improving the accuracy of the simulation. Atomic coordination number variation data is obtained through atomic structure analysis, clarifying the phase transition critical points of the crystalline material before, during, and after the cutting depth, determining whether they are fixed values, and providing theoretical support for the dynamic adjustment of process parameters. Chip formation data is obtained through chip formation analysis, judging the influence of cutting depth and entry angle on chip morphology. Crystal plane optimization is performed before cutting to select the plane that minimizes lattice damage during cutting, guiding the selection of wafer crystal orientation and clamping positioning in actual machining, ensuring that actual machining is based on sound theoretical foundations.

The conventional crystal structure modeling method used to model crystalline materials to the atomic level is modified to determine point placement for radiation processing. The cross-sectional shape of the processing target is specified 202; the location (peak) in the density field inside the shape is determined using the crystal structure model 204; the location of points in the processing target is determined for point scanning 206, where the location corresponds to the location (peak) inside the shape determined using the crystal structure model; and the location of the points is stored as candidates to be potentially included in the radiation processing plan 208.