41 results about "Vacancy defect" patented technology

The present application discloses a quantum dot, a preparation method for the quantum dot, and a photoelectric device. The quantum dot comprises a core structure and a shell structure; the shell structure wraps the core structure; the material of the core structure is selected from one or two of CdSe and ZnCdSe; the shell structure is doped with molybdenum ions. The molybdenum ions can compensate for a vacancy defect of a core-shell structure to release surface stress caused based on the vacancy defect, and coordinate exposed anions of the core-shell structure to improve the light-emitting efficiency and stability of the quantum dot.

The invention relates to a method for constructing a deep learning potential function of a lithium alloy, which comprises the following steps of: establishing initial crystal models of magnesium-lithium alloys with different lithium contents, and carrying out structure optimization on the models to obtain equilibrium state lattice constants; and respectively constructing an elastic constant calculation model, a surface energy calculation model, an interstitial atom defect model and a vacancy defect model. The method comprises the following steps: applying a strain component, calculating a strain energy fitting elastic constant component, calculating surface energy after cutting a supercell structure and optimizing, calculating formation energy after determining a gap position, and introducing a vacancy to form the supercell structure and calculating the formation energy. And inputting the data set into a deep learning framework, optimizing model precision by adjusting truncation radius parameters, and finally generating a magnesium-lithium alloy deep learning potential function. Compared with the prior art, the method has the advantages that the problem that a classic MEAM potential function cannot accurately predict the variation trend of the basal plane fault energy along with the lithium content is solved, the defect of low calculation efficiency of a first principle is overcome, and the calculation efficiency close to that of an empirical potential function is realized.

The application discloses a kind of high-entropy dual-phase sulfide and its preparation method and application, belong to electromagnetic wave absorbing material field.The application wants to solve how to enhance the weak interface polarization effect of high-entropy sulfide in electromagnetic attenuation problem.The application introduces Cu and Al metal elements into multi-metal sulfide by solvothermal and annealing method, and synthesizes a kind of six-component high-entropy sulfide wave-absorbing material (6-HES) with dual-phase structure, wherein all metal elements are uniformly distributed in M9S8 and MS (M represents metal element) two phases with crystal lattice defects.The high-entropy dual-phase sulfide prepared by the method has heterogeneous interface structure and rich vacancy defects, which not only can improve its conductance loss, but also can enhance defect-induced polarization and interface loss.The application taps the potential of multi-metal sulfide in the field of electromagnetic attenuation.

The present invention provides a cadmium telluride crystal annealing device, which belongs to the technical field of annealing devices, and includes an annealing furnace and a feeding assembly arranged in the annealing furnace, and the inner walls of the openings at both ends of the annealing furnace are installed with outer sealing rings. In the invention, during the cadmium telluride annealing process, argon gas is used to reduce the biochemical dynamics of cadmium, inhibit the formation of new vacancy defects, and enable the crystal structure to maintain relatively better integrity. At the same time, the added chromium chloride, indium and aluminum are vaporized during the heating process to interact with the relevant elements in the crystal, so that the distribution of the elements inside the crystal is more uniform. Two groups of mounting seats are set to feed the crystals after annealing and the crystals to be annealed at the same time, so as to improve the continuity of the annealing process and thus improve the efficiency of annealing. In addition, the set limit frame limits and fixes the crystals entering the furnace body during the feeding process, and releases the fixation of the crystals after unloading, so as to abandon manual work to achieve rapid fixation of the cadmium telluride crystals.

The present invention provides a method for identifying and counting different types of vacancy defects in a material. It belongs to the field of simulation technology. The method includes establishing a system model corresponding to the material; setting simulation parameters, and using molecular dynamics methods to perform defect evolution simulation calculations on the system model; obtaining the defect evolution process until each system structure after the defect evolution is completed, and obtaining the vacancy defects in the system structure and their coordinate information; using cluster analysis to divide the vacancy defects into different types of vacancy clusters; counting the number of vacancy clusters of the same type, and according to the information of the vacancy clusters in each system structure, obtaining the relationship between the evolution of different types of vacancy defects over time. The present invention can intuitively and accurately characterize the existence of various types of vacancy defects in semiconductor materials after irradiation, and the method has clear logic, simple steps, and is easy to operate.

A method for adjusting the wide spectrum detection of transition metal chalcogenides by using vacancy defects belongs to the field of two-dimensional materials. In the method, transition metal oxides are used as metal sources, two different chalcogen elements are used as sulfur sources, and a single-layer ternary transition metal chalcogen compound with uniform element distribution is grown by using a chemical vapor deposition method. By using the difference in the stability of the chemical bonds between alloy elements, the unstable chemical bonds are broken by hydrogen-assisted annealing, and the generated chalcogen element vacancy defects are uniformly distributed in the ternary transition metal chalcogen compound. The chalcogen element vacancy defects introduce defect energy levels between the conduction band and the valence band of the transition metal chalcogen compound, generate new photoluminescence peaks, and widen the spectrum detection range. The experimental method is simple in process, good in repeatability, can accurately control the type, distribution and number of defects, and is suitable for large-scale production.

The invention relates to a construction method of a high-spin-selectivity photoelectric detector, and the method comprises the steps: setting a scattering region in the middle of a photoelectric detector model constructed by an armchair type Janus WSSe lattice, and enabling the regions at the two ends to serve as a left electrode and a right electrode respectively; the method comprises the following steps: introducing a vacancy defect of a single atomic level into a scattering region of a photoelectric detector, carrying out electronic local state analysis and impurity doping analysis on the scattering region after the defect is introduced, and screening out transition metal elements meeting preset conditions as doping elements; and performing bias voltage regulation and control on the photoelectric detector doped with the elements to construct a cooperative regulation and control strategy so as to complete construction of the photoelectric detector. According to the invention, through atomic scale defect introduction and transition metal doping modes, the photo-generated spinning current intensity, the spinning polarizability and the selective response ability to polarized light are significantly improved.

The invention provides a czochralski silicon single crystal growth method and device for cooperatively controlling volume microdefects and a silicon wafer. According to the method, a nitrogen-oxygen-vacancy ternary cooperative control strategy is implemented in the crystal pulling process, and the method specifically comprises the steps that the nitrogen doping amount is calculated in the charging stage, the rotating speed of a crucible and an airflow field are controlled in the melting and stabilizing stage to adjust the oxygen content, and a thermal field is shaped through an inverted-cone-shaped guide cylinder in the equal-diameter growth stage. And locking the V / G ratio of a silicon single crystal solid-liquid growth interface in a pure vacancy defect generation region by executing pulling speed locking logic. According to the invention, the nitrogen concentration in the crystal is limited in a low concentration range of 1 * 10 < 13 > to 5 * 10 < 13 > atoms / cm < 3 >, the oxygen concentration is controlled in a range of 11 to 13 ppma, and the high-concentration vacancy of the pure vacancy region is utilized to compensate the insufficient nucleation power under the low-nitrogen condition, so that the nitrogen-related defects are inhibited, the volume micro-defects with high density and uniformly distributed in the radial direction are obtained, and the high-purity nitrogen-containing crystal is obtained. And the gate oxide integrity of the silicon wafer is improved.

The invention belongs to the technical field of preparation of high-performance thermoelectric materials, and particularly relates to a method for assisting in optimizing a P-type tin telluride thermoelectric material grain boundary and defect structure through fused salt. The polycrystalline SnTe material is synthesized by adopting a molten salt medium auxiliary melting method. According to the method, directional attachment in the crystal growth process can be promoted in a high-temperature liquid phase environment, large-size crystal grains are formed, the density of large-angle crystal boundaries is remarkably reduced, meanwhile, a sub-crystal structure composed of small-angle crystal boundaries is formed in the crystal grains through induction, the carrier mobility is improved, and the electron transport performance is optimized. Besides, cation vacancy defects are introduced by regulating and controlling a reaction environment and a doping strategy, so that the carrier concentration can be effectively regulated, and the Seebeck coefficient is further improved. On the basis, multi-scale interface scattering can be further realized and the lattice thermal conductivity can be obviously reduced by compounding an exogenous nano structure such as Mg2Yb, and finally collaborative optimization of the electric heating performance is realized, so that the material obtains excellent thermoelectric performance in a wide temperature range.

The invention relates to a class of electrochemical energy storage materials and a preparation method and application thereof. A porous metal oxide-based electrochemical energy storage material at least comprises a host metal oxide with a hierarchical pore structure; wherein, the host metal oxide is a single crystal, quasicrystal, or twin crystal structure with ordered atomic lattice arrangement, the crystal is rich in oxygen atom vacancy defects, the structural general formula is MxOy-z, wherein M is selected from one or more combinations of niobium element, molybdenum element, titanium element, vanadium element, manganese element, iron element, cobalt element, nickel element, copper element, zinc element, tungsten element, tantalum element, and zirconium element; and 1≤x≤2, 1≤y≤5, and 0.1≤z≤0.9, preferably Nb2O5-z.

The invention provides a Cr2Se3 single crystal and a preparation method thereof, and relates to the technical field of crystal materials. According to the preparation method of the Cr2Se3 single crystal, the steps from raw material proportioning, cooked powder preparation to the single crystal growth process cooperate to inhibit impurity introduction and impurity phase generation, meanwhile, ordered arrangement of atoms is promoted, lattice vacancy and dislocation are eliminated, and the Cr2Se3 single crystal good in single-phase property, high in crystallinity and extremely low in defect density is prepared. Due to the high-purity and low-defect single-crystal structure, the semiconductor transport characteristic and antiferromagnetic orderliness of the single-crystal structure are guaranteed; meanwhile, interference of impurity scattering and lattice distortion is eliminated, the regulation and control effect of a magnetic field on the Cr atom magnetic moment is optimized, and the single crystal has the strong CMR effect close to-100%. And through cooperation of all the steps, it is ensured that the prepared Cr2Se3 single crystals are consistent in size, phase composition and structural integrity, and the preparation success rate and the controllability and repeatability of the process are greatly improved.

This disclosure enables the generation and patterning of color centers with nanometer-scale spatial control in a variety of materials in repeatable fashion and without the use of radiation. Embodiments in accordance with the present disclosure employ a layer of vacancy-injection material disposed on a host-material, where the vacancy-injection material forms a compound with host-material atoms at elevated temperatures. During compound formation, lattice vacancies are generated in the host material and diffuse within the substrate lattice to bond with impurity atoms, thereby forming color centers. High-resolution lithographic patterning of the vacancy-injection film and the short diffusion lengths of the lattice vacancies enables nanometer-level spatial control over the lateral positions of the color centers. Furthermore, the depth of the color centers in the substrate can be controlled by controlling the coating material, thickness, anneal time, and anneal temperature.

The invention belongs to the technical field of semiconductors, and relates to a method for improving single-layer WSe2 second harmonic signal intensity, which comprises the following steps of: preparing a single-layer WSe2 material; carrying out heavy ion radiation on the single-layer WSe2 material to generate defects in the single-layer WSe2 material; by controlling the energy of the heavy ion radiation, the defect concentration in the single-layer WSe2 material is controlled, so that the second harmonic signal intensity of the single-layer WSe2 material is improved. Vacancy defects and tiny disordered regions are introduced into the material, and intrinsic enhancement is realized on the basis that intrinsic photoelectric characteristics of a single-layer material are not changed. Compared with an external field regulation and control method, the defect caused by ion irradiation is permanent structural change, once the defect is formed, the enhancement effect always exists and does not need to be maintained by continuously consuming energy, and the key requirements of non-volatile property and low power consumption are met.

The invention discloses a GaN-based blue-green light LED epitaxial wafer based on a Zn-doped gradient composite buffer layer and a preparation method of the GaN-based blue-green light LED epitaxial wafer. The epitaxial wafer comprises a substrate, a zinc-doped gradient composite buffer layer and a gallium nitride-based epitaxial laminated structure, and the zinc element concentration is in gradient distribution along the growth direction, preferably, the zinc element concentration is gradually reduced from the side close to the substrate to the side far away from the substrate. And the buffer layer comprises at least two of a Zn3N2 layer, a constant component ZnGaN layer or a component gradient ZnGaN layer. During preparation, the buffer layer is grown at the temperature of 400-850 DEG C, concentration gradient is realized by adjusting the flow ratio of zinc-containing and gallium-containing precursors, and forced doping is realized by adopting a 10-50-time high-flow compensation strategy in a high-temperature interval. According to the invention, lattice constant soft landing is realized by supercell matching of Zn3N2 and GaN, and nitrogen vacancy point defects are passivated in situ by using Zn atoms. Experiments prove that the luminous efficiency of the chip can be improved by about 0.81%, the ESD (Electro-Static Discharge) 4000V yield is improved to more than 98.2%, and the crystal quality and the reliability of the device are obviously enhanced.

The invention provides a perovskite single crystal diode device based on spatial position defect regulation and a preparation method thereof. The method comprises the following steps: dropwise adding a precursor solution on a substrate layer on which metal with a high heat conductivity coefficient is deposited, and then heating to evaporate a solvent to form a perovskite single crystal layer. As the heat conductivity coefficient of the metal of the electrode layer is relatively high, the parts close to the two ends of the gold electrode in the perovskite single crystal growth process are faster in heat conduction and easy to generate more defect accumulation, and the middle overhead part is slower in heat conduction and relatively generates fewer defects, so that the regulation and control of defect distribution are realized; and a diode rectification effect of polarity reversal along with the change of a light spot position is realized on a transverse structure of a perovskite absorption layer. Structural defects are reasonably utilized, the photoelectric property of a perovskite device is flexibly regulated and controlled to expand application, the halogen vacancy defect concentration of different areas on the perovskite single crystal is regulated and controlled through the reaction temperature of the synthetic material, the overall charge transfer mechanism is changed, and the rectification characteristic that polarity can be reversed along with the change of the light spot position is achieved.

The invention discloses a reference lattice adaptive reconstruction method for Wigner-Seitz point defect identification, which is characterized in that based on an off-location lattice, defects in the off-location lattice are classified, in the first type of defects, firstly, interstitial sub defects in local defects are removed, so that only vacancy defects are left in a system, and in the second type of defects, the interstitial sub defects in local defects are removed; then, defect areas of vacancy defects are gradually replaced by perfect lattices through lattice symmetry operation, if the defect areas are still not replaced, additional lattice symmetry operation is iterated in the process until all the defect areas are replaced by the perfect lattices, and finally, a reconstructed perfect reference lattice is obtained through combination. The reference lattice self-adaptive reconstruction method is still effective even in a very complex environment, and the defects of a traditional WS and other point defect recognition method are overcome or solved.

This invention provides a Cr2Se3 single crystal and its preparation method, relating to the field of crystal materials technology. The Cr2Se3 single crystal preparation method, from raw material proportioning and powder preparation to single crystal growth, involves coordinated steps to suppress impurity introduction and impurity phase formation, while simultaneously promoting ordered atomic arrangement and eliminating lattice vacancies and dislocations, resulting in a Cr2Se3 single crystal with good single-phase properties, high crystallinity, and extremely low defect density. The high-purity, low-defect single crystal structure ensures its semiconductor transport properties and antiferromagnetic order; it also eliminates interference from impurity scattering and lattice distortion, optimizing the magnetic field's control over the magnetic moments of Cr atoms, enabling the single crystal to exhibit a strong CMR effect approaching -100%. Furthermore, the coordinated steps ensure consistency in size, phase composition, and structural integrity of the prepared Cr2Se3 single crystal, significantly improving the success rate, process controllability, and repeatability.

The invention discloses a preparation method and application of an acanthosphere-shaped S-doped O vacancy bismuth oxide material, and belongs to the technical field of functional materials. The invention aims to solve the problems that the Bi2O3 nano material prepared in the prior art is agglomerated and has few active sites, and the functional characteristics of the material are reduced. The method comprises: 1, preparing a reaction liquid; 2, hydrothermal reaction; 3, centrifugal cleaning; and 4, high-temperature sintering. The acanthosphere-shaped S-doped O vacancy bismuth oxide material is used as a gas sensitive material. The S-Bi2O3-x material disclosed by the invention is of an acanthosphere-shaped hierarchical structure, agglomeration of nanowires is effectively reduced, more active surfaces are exposed, the S-Bi2O3-x material contains rich O vacancy defects, reaction sites are increased, and the room-temperature NO2 sensing characteristic is shown. According to the invention, the acanthosphere-shaped S-doped O vacancy bismuth oxide material can be obtained.

The application discloses a kind of high-temperature-resistant cubic boron nitride single crystals and preparation method thereof.The method uses BN raw material as main body, adjusts boron and nitrogen activity by using B / N chemical potential buffer fluxing system, and realizes carbon and silicon cooperative introduction by C-Si slow-release doping system;At the same time, oxygen trapping agent is spatially isolated from the main growth zone to reduce the oxygen activity of the reaction system and reduce the entry of oxygen trapping agent into the crystal growth interface.After growth is completed, high-pressure in-situ annealing is carried out under non-pressure relief condition to promote point defect migration, combination and local structure adjustment.The obtained cBN single crystal has low oxygen content, low sp2 related signal, narrow Raman half-width, high room temperature hardness and high hardness retention rate after high temperature treatment.The method can effectively reduce oxygen pollution, vacancy defects and sp2 impurities, improve the structure quality, hardness and high-temperature service stability of cBN single crystal.

The present invention discloses a method for optimizing vacancy-type defect structures at interfaces. The main steps include: obtaining the lattice position and affected region with minimum vacancy formation energy, deleting atoms in the region that may be affected by vacancy occupation; dividing the affected region after the atoms are deleted into a grid; inserting atoms into the divided grid; optimizing the occupied positions of the inserted atoms on the grid; and relaxing the optimized occupied positions to obtain the vacancy ground-state atomic structure. This optimization method does not restrict the atomic lattice position and can search for vacancy structures at all positions in a certain spatial region. It can effectively access the potential energy surface characteristics near the interface and obtain the ground-state structure of the vacancy.

The invention provides a method for determining radiation defects of a scintillator. The method comprises the following steps: constructing a crystal defect model of a Cs3Cu2I5 scintillator; carrying out first principle calculation on the crystal defect model and the Cs3Cu2I5 intermediate product model to obtain atomic position information and lattice system energy of each model; an intermediate product and a final product are prepared through linear programming analysis to form constraint conditions, and defect crystal formation energy is calculated in the constraint conditions; according to the calculated defect crystal formation energy, selecting different elements to form a vacancy defect system with the lowest energy, and calculating energy band structures of primitive cells and the vacancy defect systems Cs, Cu and I through an electron wave function; calculating the electronic state density of the I vacancy defect to obtain the total state density and the partial wave state density; and calculating to obtain the optical property of each defect system. According to the invention, the radiation defect condition of the scintillator can be obtained.

A method for evaluating a silicon wafer cut from a silicon single crystal ingot grown by a CZ method, comprising Measuring a generation rate of thermal donors generated when a thermal donor generation heat treatment is applied to the silicon wafer, and Determining the presence / absence of a crystal defect region or the type of a crystal defect based on the measured generation rate of thermal donors, wherein measuring a generation rate of thermal donors includes: Calculating a first thermal donor generation rate, which is the generation rate of the thermal donors generated at a first measurement point on a first silicon wafer cut from the silicon single-crystal ingot when the thermal donor generation heat treatment is applied in a state where the first silicon wafer contains oxygen clusters, Calculating a second generation rate of thermal donors, which is the generation rate of the thermal donors generated at a second measurement point on a second silicon wafer different from the first silicon wafer cut from the silicon single crystal ingot when a donor removal treatment and the thermal donor generation heat treatment are applied sequentially, and wherein Determining the presence / absence of a crystal defect region or the type of crystal defect includes: Determining, based on a thermal donor generation rate ratio, which is a ratio of the first thermal donor generation rate to the second thermal donor generation rate, which region, selected from a region with OSF nuclei, a region with vacancy defects, and a defect-free region, the first measurement point corresponds to.

The invention relates to the technical field of material analysis and detection, in particular to a magnesium oxide single crystal target material light analysis and detection system which comprises a spectrum acquisition module, a data processing module and a data analysis and calculation module. The spectrum acquisition module is used for irradiating the magnesium oxide single crystal sample through ultraviolet light and visible light respectively to obtain a sample ultraviolet light spectrum and a sample visible light spectrum, and synthesizing the sample ultraviolet light spectrum and the sample visible light spectrum into a first spectrum; the method comprises the following steps: extracting absorption peak spectral characteristics of vacancy defects of iron impurities in a magnesium oxide single crystal sample and absorption peak spectral characteristics of magnesium vacancies and oxygen vacancies in a magnesium oxide single crystal target material, and comparing the absorption peak spectral characteristics to find out the vacancy defects of the iron impurities which are mistakenly identified as the magnesium vacancies and the oxygen vacancies in the magnesium oxide single crystal target material; and the calculation error of the iron impurity concentration of the magnesium oxide single crystal target material caused by neglect of the iron impurities due to misjudgment is avoided.

The invention relates to the technical field of semiconductor photocatalytic materials, in particular to a preparation method of crystal face controllable nano titanium dioxide, which comprises the following steps: establishing an anatase type TiO2 model; one or more external atom sources selected from a C atom source, an N atom source, a Fe atom source, a Co atom source, a Ni atom source, a Cu atom source, a Zn atom source, a Mo atom source, a Sn atom source and a W atom source are introduced into crystal lattices of the TiO2 model according to the doping proportions of the different external atom sources, the specific positions of the different external atom sources in the crystal lattices and the like. Foreign atoms are introduced into TiO2 crystal lattices and surfaces, the crystal lattice structure, electron cloud distribution, the surface dangling bond state and vacancy defects of the TiO2 crystal lattices are changed, the surface energy of the {101} crystal face and the {001} crystal face is regulated and controlled fundamentally, and accurate regulation and control of the exposure proportion of the crystal faces can be achieved without depending on a traditional fluorine ion additive.

This invention discloses a method, system, and substrate for single-molecule detection based on defect-engineered two-dimensional materials. The method includes the following steps: obtaining a two-dimensional material layer; subjecting the two-dimensional material layer to plasma bombardment to introduce nanopore defects of a predetermined density and size, thereby forming a defect-engineered two-dimensional material substrate, wherein the nanopore defects include vacancy defects, which are used to modulate the band gap of the two-dimensional material layer and enhance the charge transfer effect between it and the analyte molecule; adsorbing the analyte molecule onto the surface of the defect-engineered two-dimensional material substrate; and performing Raman spectroscopy on the defect-engineered two-dimensional material substrate with the adsorbed analyte molecule to obtain a surface-enhanced Raman scattering signal. This invention enables the defect-engineered two-dimensional material substrate to generate an extremely strong surface-enhanced Raman scattering signal, thereby achieving ultra-high sensitivity detection of analytes at low concentrations or even single-molecule levels.

This application belongs to the field of microelectronic devices, specifically disclosing a self-rectified memristor and its fabrication method. This application employs multi-element synergistic ion implantation into the functional layer. Rare gas ions introduce pure vacancy defects to regulate the interface barrier between the first electrode and the functional layer, forming a barrier difference and achieving a self-rectification effect. Non-metallic elements, acting as interstitial atoms or substitutional impurities, convert some vacancy defects into first composite defects. By changing the charge distribution, the energy level of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve the Poul-Frenkel electron emission mechanism. Metallic elements, acting as substitutional impurities, convert some comprehensive defects into second composite defects. By changing the bonding valence state, the concentration of the comprehensive defect at the interface between the first electrode and the functional layer is regulated to achieve resistive switching stability. This allows for precise control of the defect concentration and energy level, resulting in a fixed site that does not frequently move, thus preventing leakage current and improving its fatigue resistance and consistency.

The invention discloses an n-type Ag4Sn0. 5S2Te liquid thermoelectric material with low thermal conductivity and a preparation method and application thereof, the chemical formula of the n-type Ag4Sn0. 5S2Te liquid thermoelectric material with low thermal conductivity is Ag4Sn0. 5S2Te, and the n-type Ag4Sn0. 5S2Te liquid thermoelectric material with low thermal conductivity belongs to a # imgabs0 # space group of a cubic system; the chemical formula of the Te vacancy defect of the Ag4Sn0. 5S2Te after thermoelectric performance optimization is Ag4Sn0. 5S2Te < 0.92 >; according to the n-type Ag4Sn0. 5S2Te liquid thermoelectric material with low thermal conductivity, an anion rigid frame is formed by a SnS4 tetrahedron element at the edge center and Te at the face center position, and Ag ions move in the anion rigid frame; according to the method, the material Ag4Sn0. 5S2Te is synthesized through a high-temperature vacuum solid-phase method, the ultralow heat conductivity of 0.22-0.32 Wm <-1 > K <-1 > is achieved at 300-823 K, the material is a consistent molten compound and keeps a stable cubic phase at 200-1100 K, and the thermoelectric figure of merit of 0.74 is achieved through Te vacancy defect regulation and control and Ag4Sn0. 5S2Te0. 92 and is improved by 95% compared with intrinsic thermoelectric figure of merit of 0.74.

The invention provides a quantum magnetic sensor based on oxygen injection silicon carbide and a magnetic field sensing method thereof. The device is simple in structure, relatively low in cost, relatively convenient to use and very easy to popularize and use. The silicon carbide double-vacancy defect is prepared by adopting oxygen ion implantation and subsequent annealing processes, so that the yield and the defect density of the double-vacancy defect are greatly improved, and the sensitivity of magnetic field sensing is improved. According to the invention, the laser and microwave power used during detection is optimized, the measurement sensitivity is improved to a great extent, and the sensing sensitivity obtained by an experiment can reach hundreds of nT magnitude.

The invention relates to a non-equilibrium surface oxygen vacancy induced rapid optical transition material and a preparation method thereof. The non-equilibrium surface oxygen vacancy induced rapid optical transition material has an ATiO3-at-ATiO3-x core-shell structure, the core structure is a complete and ordered ATiO3 crystal lattice, and the shell structure is a disordered ATiO3-x amorphous structure containing non-equilibrium surface oxygen vacancy defects; wherein A is Mg, Ca, Sr or Ba; x is more than 0 and less than 1.5.

This invention relates to the field of thin film material preparation technology, specifically to a method for preparing a single-crystal transition metal nitride epitaxial thin film with an anti-perovskite structure. In a molecular beam epitaxy (MBE) apparatus, after heating the single-crystal substrate, a transition metal atom beam and an active nitrogen atom beam generated by a radio frequency plasma source are supplied simultaneously and independently. By precisely controlling the beam ratio, growth is kept within a narrow stoichiometric window. During growth, in-situ real-time monitoring is performed using reflective high-energy electron diffraction to ensure the film grows in a two-dimensional layered manner. Finally, the film is slowly cooled in an active nitrogen atmosphere. This method can prepare single-crystal thin films with atomically flat surfaces, high phase purity, excellent crystallinity, and a clear epitaxial relationship, exhibiting fewer nitrogen vacancy defects and significantly optimized magnetic and other physical properties.