18 results about "Graphene monolayer" patented technology

A THz-band TM polarization double-band tunable spectrum selective absorber comprises a graphene single layer, a square nanopore array, a dielectric medium thin film layer, an antireflection thin film layer and a dielectric medium substrate from top to bottom, the square nanopore array is composed of two-dimensional periodic nanopore arrays, and when TM polarized light is vertically incident, the two-dimensional periodic nanopore arrays form a two-dimensional periodic nanopore array; incident light in two narrow frequency ranges will be absorbed, along with changes of structure parameters and incident angles, small frequency shift of absorption spectrum occurs, small change of peak absorption efficiency occurs accordingly, absorption higher than 50% can be always kept at each peak frequency, and the full width at half maximum of an absorption spectrum line is always smaller than 0.005 THz. Dynamic tuning is carried out in a large frequency range by changing the Fermi level of graphene. The device is processed by combining an electron beam direct writing device with a microelectronic deep etching process, can be produced in batches, and has an important practical prospect.

A method for the manufacture of a graphene laminate (400, figure 4) comprises providing a growth substrate comprising a support layer 205 and a first layer 210 provided thereon, the first layer having a growth surface distal from the support, the growth surface having a <111> crystallographic orientation and being formed of either scandium-aluminium oxide or scandium-gallium oxide, and forming a graphene layer structure (405) on the growth surface of the first layer by CVD. The support layer may comprise silicon. The graphene layer structure is preferably a graphene monolayer. The first layer may comprise a first sublayer 215 as a buffer layer, preferably comprising scandium oxide, yttrium oxide or erbium oxide, and a second sublayer 220 consisting of the scandium-aluminium oxide or the scandium-gallium oxide. An electronic device comprising the graphene laminate is also disclosed.

The present invention provides an all-optical switch based on Period-Doubling photonic crystal, which belongs to the technical field of all-optical communication. It includes a plurality of first dielectric layers, a plurality of second dielectric layers and two graphene monolayers, the first dielectric layer is denoted as H, the second dielectric layer is denoted as L, and the graphene monolayer is denoted as G. The layered structure of the all-optical switch is represented as: HL1GL2HH1GH1HL2GL1HL, wherein L1GL2 and L2GL1 both represent a three-layer structure formed by a graphene monolayer embedded in the second dielectric layer, H1GH1 represents a three-layer structure formed by a graphene monolayer embedded in the middle of the first dielectric layer, the thickness of the first dielectric layer and the second dielectric layer are 1 / 4 of their respective optical wavelengths, and the first dielectric layer and the second dielectric layer are two uniform dielectric sheets with high and low refractive indices, respectively. The present invention can be applied to all-optical switches.

The present invention discloses a method for removing a single layer of graphene based on a pulsed ion beam, including controlling the sputtering energy and pulse width of the pulsed ion beam to be maintained between the sputtering thresholds of the defective surface layer and the complete bottom layer of the multilayer graphene, and bombarding the multilayer graphene with the pulsed ion beam at an angle, thereby selectively removing carbon atoms in the defective surface layer and retaining carbon atoms in the complete bottom layer at the same time. The present invention can be used for selective and controlled removal of atomic layers, and achieves precise exfoliation of large-scale single atomic layers. Compared with conventional technologies, the present invention is more controllable, has a wider processing window, higher performance and quality, and the pulsed ion beam can achieve batch acquisition of complete atomic layer surfaces over a large area, which can solve the problems of uncontrollable number of layers and low efficiency in existing graphene material removal methods, and provides a new graphene removal solution for graphene applications in semiconductors, light detection, and synthetic catalysis, expanding the potential for innovative applications of two-dimensional materials.

The invention relates to the technical field of electrochemical energy storage, and discloses a negative electrode material preparation method, a performance prediction method, a negative electrode material and a battery, and the negative electrode material preparation method comprises the following steps: constructing a graphene single-layer structure model; performing boron doping on the graphene single-layer structure model to construct a boron-doped graphene single-layer structure model; and constructing an adsorption model of lithium atoms on specific sites of the boron-doped graphene single-layer structure model. By doping boron atoms into the graphene material, the electronic structure and inherent properties of the boron-doped graphene are effectively regulated and controlled, and the dynamic process of an interface chemical reaction is further remarkably influenced, so that the electrochemical performance is greatly improved, the boron-doped graphene still keeps a planar structure, and the boron-doped graphene is good in structural stability. After the boron-doped graphene adsorbs lithium, the adsorption energy is gradually reduced and is smaller than the cohesive energy of lithium atoms, so that dendritic crystals can be inhibited by boron doping.

The present invention provides an optical storage device based on Rudin-Shapino photonic crystals, belonging to the field of all-optical communication technology. The optical storage device comprises a plurality of first dielectric layers, a plurality of second dielectric layers and two graphene monolayers, wherein the first dielectric layer is denoted as H, the second dielectric layer is denoted as L, and the graphene monolayer is denoted as G. The layered structure of the optical storage device is represented as: HHHLHHL1GL2HHL2GL1HHLHHH, wherein L1GL2 and L2GL1 both represent a three-layer structure formed by embedding a graphene monolayer in a second dielectric layer, the thickness of the first dielectric layer and the second dielectric layer are 1 / 4 of their respective optical wavelengths, and the first dielectric layer and the second dielectric layer are two uniform dielectric sheets with high and low refractive indices, respectively; the optical storage device based on Rudin-Shapino photonic crystals can realize a low-threshold optical bistable state, and the upper and lower thresholds of the bistable state correspond to the write and read decision thresholds of the optical storage device, respectively. The present invention has the advantages of being applicable to optical storage devices, etc.

The application belongs to the technical field of modified graphene oxide, and provides a polysiloxane modified single-layer graphene oxide and a preparation method thereof. The method comprises the following steps: mixing single-layer graphene oxide, hydrogen-containing polysiloxane, an organic solvent and a catalyst, and performing a reaction to obtain the polysiloxane modified single-layer graphene oxide. The silicon hydrogen bond in the hydrogen-containing polysiloxane is used to perform a condensation reaction with the hydroxyl group in the single-layer graphene oxide, so that the single-layer graphene oxide is modified, and the method has the advantages of high reaction activity, short reaction time and no by-products except hydrogen. The polysiloxane modified single-layer graphene oxide prepared by the application has macromolecular polysiloxane grafted on the surface of the single-layer graphene oxide, and the single-layer graphene oxide modified by the macromolecular polysiloxane has better hydrophobicity than that modified by a small-molecule silane modifier. In addition, the application can accurately control the molecular weight of the polysiloxane grafted on the surface of the single-layer graphene oxide, and has a wide application prospect.

This disclosure generally relates to graphene-based diagnostic sensor devices. More particularly, the disclosure relates to graphene-based diagnostic sensor devices for the multiplex detection of target nucleic acids in fluid samples, including biological fluid samples. In certain aspects, the graphene-based multiplex diagnostic devices disclosed herein comprise a graphene-based FET sensor array chip, wherein each sensor in the array comprises an independent sensing regions, each sensing region having a nucleic acid probe attached to a graphene monolayer, for hybridizing and detecting a target nucleic acid.

The present invention provides a trigger threshold adjustable optical logic device based on graphene, which belongs to the field of all-optical communication technology. The optical logic device includes a plurality of first dielectric layers A, a plurality of second dielectric layers B and four graphene monolayers G, represented as ABABBBABABB 1 GB 2 BB 3 GB 4 BB 4 GB 3 BB 2 GB 1 BABABBBABA, where B 1 GB 2 , B 2 GB 1 , B 3 GB 4 and B 4 GB 3 Both represent a sandwich structure formed by embedding a graphene monolayer in a second dielectric layer; the first dielectric layer and the second dielectric layer are two uniform dielectric sheets with different refractive indices; the optical logic device has four optical sub-forms, and the electric field corresponding to the optical sub-form has a local effect. The four graphene monolayers are respectively embedded in the strongest position of the local electric field corresponding to one of the sub-forms, so that the third-order nonlinear effect of the graphene monolayer is enhanced, thereby realizing a low-threshold optical bistability; the thickness of the first dielectric layer and the second dielectric layer is 1 / 4 of their respective optical wavelengths. The present invention has the advantages of low optical bistability threshold and the like.

The present invention provides an optical logic device based on Period‑Doubling photonic crystals, which belongs to the field of all-optical communication technology. It includes a plurality of first dielectric layers, a plurality of second dielectric layers and two graphene monolayers, the first dielectric layer is denoted as H, the second dielectric layer is denoted as L, the graphene monolayer is denoted as G, and the layered structure of the optical logic device is represented as: HLH1GH2HH2GH1LHL, wherein H1GH2 and H2GH1 both represent a three-layer structure formed by graphene monolayers embedded in the first dielectric layer, the thickness of the first dielectric layer and the second dielectric layer are 1 / 4 of their respective optical wavelengths, and the first dielectric layer and the second dielectric layer are two uniform dielectric sheets with high and low refractive indices, respectively. The optical logic device based on PD photonic crystals can realize low-threshold optical bistable states, and the upper and lower thresholds of the bistable states correspond to the decision thresholds of logic 1 and logic 0 of the optical logic device, respectively. The present invention has the advantages of being able to be used as an optical logic device.

The present invention provides an adjustable dual-channel photon filter, belonging to the field of optical technology. It includes five first dielectric layers and three second dielectric layers, and the first dielectric layer and the second dielectric layer are arranged in the order of the incident direction to the exit direction: the first dielectric layer, the second dielectric layer, the first dielectric layer, the first dielectric layer, the first dielectric layer, the second dielectric layer, the first dielectric layer, the second dielectric layer; the first dielectric layer and the second dielectric layer are two uniform dielectrics with different refractive indices; the thickness of the first dielectric layer and the second dielectric layer is 1 / 4 of the optical wavelength corresponding to their respective refractive indices; a graphene monolayer is embedded at the boundary of adjacent first dielectric layers or at the boundary of the first dielectric layer and the second dielectric layer; the transverse magnetic wave is vertically incident from the incident side of the adjustable dual-channel photon filter. The dual-channel photon filter can adjust the transmittance and center frequency of the filter channel.

The application provides a method for preparing graphene from needle coke, and belongs to the technical field of graphene preparation. The method comprises the following steps: 1) mixing needle coke, a strong oxidizing agent and a solvent, and performing ultrasonic treatment on the mixture to obtain an ultrasonic material; 2) performing high-temperature and high-pressure treatment on the ultrasonic material, and instantaneously releasing pressure after the high-temperature and high-pressure treatment is completed to obtain exfoliated needle coke; and 3) performing vacuum microwave treatment on the exfoliated needle coke to obtain graphene. The method provided by the application is simple in process, suitable for industrial production, and can prepare graphene with a high single-layer rate and good quality.

The application belongs to the technical field of lithium-sulfur batteries, and relates to a nitrogen-doped graphite-like intercalated MoS2 heterostructure and a preparation method and application thereof. The preparation method is as follows: after molybdenum salt and thiourea are completely dissolved in deionized water or ultrapure water, polyethylene imine is added, and the mixture is stirred to obtain a mixed solution; the mixed solution is subjected to a hydrothermal reaction to obtain a precipitate; the precipitate is washed, centrifuged and dried for multiple times to obtain a MoS2 / PEI composite material; the MoS2 / PEI composite material is subjected to annealing treatment at 550 DEG C to 850 DEG C for 2 h to 10 h under the protection of argon to obtain a MoS2 / g-CM heterostructure. The application successfully constructs and systematically verifies that the nitrogen-doped graphite-like single-layer carbon inserted into the interlayer of MoS2 forms a heterostructure as a multifunctional catalyst and interface regulation material for high-performance lithium-sulfur batteries. On the premise of ensuring excellent catalytic properties, the conductivity is improved, and the defects of active site scarcity and easy collapse of the layered structure are overcome.

A TM polarization three-band tunable spectrum selective absorber based on a guided mode resonance effect comprises a graphene single layer, a hexagonal lattice point nanopore array, a dielectric medium thin film layer, an antireflection thin film layer and a dielectric medium substrate from top to bottom, and the nanopore array is composed of a two-dimensional periodic hexagonal lattice point nanopore array. Under vertical incidence of TM polarized light, incident light in three narrow frequency ranges can be absorbed, an absorption spectrum is subjected to micro-frequency shift along with structural parameters and incident angles, but the absorption rate at each peak frequency is higher than 30%, and the full width at half maximum is smaller than 0.005 THz; by adjusting the Fermi level of the graphene, the absorption performance can be dynamically tuned in a large frequency range. The TM polarization three-band tunable spectrum selective absorber is processed by combining an electron beam direct writing device with a micro-electronic deep etching process, is convenient in material taking and low in manufacturing cost, can be produced on a large scale, and has important practical prospects.

The present invention provides an optical logic device based on Rudin-Shapino photonic crystals, belonging to the field of all-optical communication technology. It includes two symmetrically distributed binary RS photonic crystals and two graphene monolayers, the binary RS photonic crystals include a plurality of first dielectric layers and a plurality of second dielectric layers, the first dielectric layer is denoted as H, the second dielectric layer is denoted as L, the graphene monolayer is denoted as G, the binary RS photonic crystal is denoted as HHHLHHLH, and the optical logic device is denoted as HHHLHHLH 1 GH 2 H 2 GH 1 LHHLHHH, where H 1 GH 2 and H 2 GH 1 Both represent a three-layer structure formed by embedding a single layer of graphene in a first dielectric layer, the thickness of the first dielectric layer and the second dielectric layer are 1 / 4 of their respective optical wavelengths, and the first dielectric layer and the second dielectric layer are two uniform dielectric sheets with high and low refractive indices, respectively. The present invention has the advantages of low judgment threshold and the like.

The invention provides a hyperbolic metamaterial based on aperiodic graphene-dielectric and application of the hyperbolic metamaterial, and belongs to the technical field of optical sensors. The graphene single layer A and the dielectric layer B form a hyperbolic metamaterial heterostructure according to the rule of a cantor sequence; incident light is emitted to the surface layer plane of the hyperbolic metamaterial heterostructure, and for a given incident wavelength, the dispersion space of the hyperbolic metamaterial heterostructure shows hyperbolic dispersion characteristics related to the weight occupied by the dielectric thickness by modulating the Fermi level of graphene; by adjusting the Fermi level, the relaxation time, the number of layers and the thickness of a dielectric medium of the graphene single layer A, the phase of a reflection coefficient changes greatly near a phase change point from hyperbolic dispersion to elliptic dispersion, so that huge GH displacement is realized at a resonance angle, and the angle displacement sensor utilizes the corresponding relation between the GH displacement and an incident angle.

This disclosure generally relates to graphene-based diagnostic sensor devices. More particularly, the disclosure relates to graphene-based diagnostic sensor devices for the multiplex detection of target nucleic acids in fluid samples, including biological fluid samples. In certain aspects, the graphene-based multiplex diagnostic devices disclosed herein comprise a graphene-based FET multiplex sensor array having multiple independent sensors, each having a nucleic acid probe, for hybridizing and detecting a target nucleic acid, attached to a graphene monolayer.