155results about How to "Increase temperature coefficient" patented technology

A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.

The invention relates to the field of nonlinear compensation of band-gap reference, which is characterized in that: two branch circuit currents are added according to a principle of nonlinear subsection compensation; the currents are extracted and introduced into divider resistances of a reference output branch circuit according to an internal temperature negative feedback structure of the output branch circuit; and the temperature characteristics of an output reference voltage source are changed according to the influence of temperature coefficients of current extraction and introducing on output voltages in different temperature ranges to ensure that the output reference voltages repeatedly reach local extreme points in the whole working temperature range. The output voltage reference first derivatives with respect to the temperatures at the points are zero, so that the aim of subsection compensation is fulfilled, and the temperature coefficients of the output reference voltage source are effectively reduced.

The invention discloses a current / frequency conversion circuit, which comprises an integrator, a logic control circuit, a constant current source, an analog electronic switch and a temperature compensation circuit, wherein the input end of the integrator is connected to the input current, and the output end of the integrator is connected to the logic control circuit; the control signal output endof the logic control circuit is connected to the analog electronic switch, and the logic control circuit is further provided with a digital output end used for outputting a digital pulse frequency anda clock input end used for inputting an external clock; one end of the analog electronic switch is connected to the output end of the constant current source, and the other end of the analog electronic switch is connected to the input end of the integrator; and the temperature compensation circuit is connected to an adjusting port of the constant current source. The reference voltage is directlychanged through the temperature compensation circuit, so that the output of the constant current source is changed, the temperature change of the whole circuit is compensated, and the current / frequency conversion circuit is good in temperature coefficient. The temperature coefficient of the circuit is greatly improved without depending on an index of a single device. Meanwhile, the line structureis simple and the stability of a converter cannot be affected.

The invention discloses a rare earth permanent magnet material, a raw material composition, a preparation method, application and a motor. The rare earth permanent magnet material comprises the following components in percentage by weight: 28.5-33.0 wt% of R; more than 1.5wt% of RH; 0-0.08 wt% of Cu of which the percentage by weight is more than 0 wt%; 0.5-2.0wt% of Co; 0.05-0.30wt% of Ga; 0.95-1.05wt% of B; and Fe and inevitable impurities which are adopted as balance. The R-T-B series permanent magnet material is excellent in performance; under the condition that the content of heavy rare earth elements in the permanent magnet material is 3.0-4.5 wt%, Br is larger than or equal to 12.78 kGs, and Hcj is larger than or equal to 29.55 kOe; and under the condition that the content of the heavy rare earth elements in the permanent magnet material is 1.5-2.5 wt%, Br is larger than or equal to 13.06 kGs, and Hcj is larger than or equal to 26.31 kOe.

The invention discloses a high-order temperature compensating current reference source. The current reference source comprises a start-up circuit, an inversely proportional to absolute temperature (IPTAT) current source and a reference current output unit, wherein the start-up circuit serves as the start-up circuit of the IPTAT current source; and reference current obtained by the IPTAT current source is output through the reference current output unit. The current reference source of the invention has a simple circuit structure, and the output reference current is hardly influenced by temperature.

The detector includes a thin-film resistive component (3), at least two first electrical contacts (6, 7) electrically connected to the resistive component (3) that provide for biasing and signal readout, at least one second electrical contact (1) electrically connected to the resistive component (3) that provides bias control, an integral infra-red absorption means (4, 5) and thermal isolation means (10, 11). The detector may further include a readout integrated microcircuit (RIOC).

The invention discloses a new preparing method of MnCoNi film material through wetting-chemical method, which is characterized by the following: enlarging area at lower temperature; stabilizing the heat-sensitive material of MnCoNi film; breaking the limit of traditional ceramic element to satisfy the request of aviation and astronautic technological element.

The invention discloses a samarium cobalt permanent magnetic material and a preparation method thereof. The samarium cobalt permanent magnetic material is prepared from the following chemical ingredients by mass percent: 24.5-26% of samarium, 52-56% of cobalt, 7.5-12% of iron, 6.5-8% of copper, and 2-4% of zirconium. The samarium cobalt permanent magnet disclosed by the invention has high coercivity and low temperature coefficient; the magnetic performance at the temperature of 400-450 DEG C is that the residual magnetism Br is 0.783-0.907 T; the intrinsic coercivity Hcj is 704-1092.5 kA / m; the maximal magnetic level (BH)max is 108.5-164 kJ / m<3>; the temperature coefficient alpha of the residual magnetism is -0.0368% / DEG C to -0.054% / DEG C; and the temperature coefficient beta of the intrinsic coercivity is -0.132% / DEG C to -0.198% / DEG C. Thus, the samarium cobalt permanent magnetic material is simple in process and low in manufacturing cost.

The invention discloses a high-power yttrium-gadolinium garnet ferrite having the composition chemical formula specifically expressed as Sm[x]Y[3-x-y-2z-p-q-q']Gd[y]Ca[2z+p+q+q']V[z]Ge[p]Sn[q]Ti[q']In[q'']Al[w]Mn[w']Fe[5-z-p-q-q'-q''-w-w'-[delta]]O[12], wherein 0<=x<=0.20, 0<=y<=3.0, 0<=z<=1.3, 0<=p<=0.9, 0<=q<=0.7, 0<=q'<=0.7, 0<=q''<=0.70, 0<=w<=1.3, 0<=w'<=0.10, 0<=delta<=0.8, and delta represents iron deficient quantity. The high-power garnet ferrite material having high spin wave line width [delta]Hk, low ferromagnetic resonance line width [delta]H and high dielectric constant epsilon' can be obtained.

The invention relates to an integrated circuit and discloses a voltage reference source circuit and a method for generating a voltage reference source. The method comprises the following steps of: generating a self-adaption nonlinear PTAT (positive temperature coefficient) current through a high-order temperature coefficient compensation circuit; converting the current into a self-adaption nonlinear PTAT voltage and then superposing the voltage with a first-order reference voltage; and generating the reference voltage approximate to zero-temperature coefficient, as the voltage reference source. The self-adaption nonlinear PTAT voltage counteracts the nonlinear negative temperature coefficient in the first-order reference voltage, so the voltage reference source has lower temperature coefficient. In addition, the structure is simple, the compensation branch stability is better and the influence on the initial precision of the voltage reference source is small.

An acoustic wave device includes a piezoelectric substrate, comb electrodes formed above the piezoelectric substrate, and a first dielectric film provided so as to cover the comb electrodes, the first dielectric film having empty spaces associated with fingers of the comb electrodes.

The invention discloses a flexible magnetic field measurement device and a manufacturing method and belongs to the magnetic sensor field. The device comprises a flexible substrate layer, a metal buffer layer, a magnetostrictive layer, a piezoelectric film layer and a protection layer which are sequentially laminated from down to up, wherein a side of the piezoelectric film layer corresponding to the protection layer is provided with an energy transducer layer embedded in the protection layer, and the energy transducer layer is a single-end or double-end resonance type structure composed of aninterdigital energy transducer and a reflecting grating. The measurement device is advantaged in that through utilizing the flexible substrate material, compared with a sensor prepared from a traditional rigidity substrate material, besides surface acoustic wave modes including common rayleigh waves and Love waves, a new wave mode, e.g., lamb waves can be further generated by the flexible magneticsensor, so bending property, high magnetic field sensitivity, integrated processing and low cost are realized, and the measurement device is suitable for miniaturization and intelligentization development of sensors, and the measurement device is applicable to magnetic field measurement and intelligent wearing fields.

An electronic part includes: a substrate; a comb-shaped electrode having a plurality of electrode fingers arranged parallel to one another on the upper surface of the substrate; and a protective film formed on the upper surface of the substrate so as to cover the comb-shaped electrode. The protective film has convex portions and concave portions. The convex portions are upwardly convex at the positions corresponding to the electrode fingers, and the concave portions are downwardly concave between the convex portions. The cross section of the protective film in the direction orthogonal to the extending direction of the electrode fingers has a downward convex curve between apex portions of the convex portions.

The invention belongs to the technical field of electronic circuits and particularly relates to a band-gap reference circuit with high-order temperature compensation. The band-gap reference circuit with the high-order temperature compensation comprises the band-gap reference circuit and a voltage regulation circuit. According to the band-gap reference circuit with the high-order temperature compensation, with addition of nonlinear temperature compensation and a feedback regulation circuit, a temperature coefficient is better improved; reference output voltage can be more stable through negative feedback action of the voltage regulation circuit, and thus band-gap reference voltage with high-order temperature compensation is obtained; and compared with the traditional band-gap reference voltage, the band-gap reference voltage with the high-order temperature compensation has lower temperature coefficient and is more accurate and stable in the reference output voltage. The band-gap reference circuit with the high-order temperature compensation can be applied to various analog integrated circuits including oscillators, data converters and the like.

The invention relates to a novel packaging method of an MEMS (Micro-electromechanical Systems) structure and a processing circuit integrated system. The method comprises the following steps: (1) preserving a plurality of circuit chip holding areas on each substrate unit of an MEMS wafer, and putting circuit chips on the MEMS wafer to form integration of the MEMS structure with a processing circuit; (2) utilizing a vertical intercoupling technique, using silicon as a cover plate in which a vertical through hole is formed, filling a conductive material into the through hole to form an input port and an output port of the structure; (3) forming a plurality of grooves in the binding surface of the cover plate for providing a vacuum airtight environment necessary for working of an MEMS device and a space required by the circuit, wherein an air sucking agent film inside the cover plate groove is used for maintaining the vacuum degree; (4) performing wafer binding on the cover plate and the MEMS wafer so as to achieve the wafer grade vacuum integrated packaging. The method is not only simple in process, wide in application range and remarkable in effect, but also can avoid thermal stress caused by the coefficient of thermal expansion, and can remarkably improve the temperature coefficient of a device.

The invention relates to a linear voltage stabilizer with current-limiting short circuit protection. The linear voltage stabilizer comprises a starting circuit, a reference voltage circuit, a comparison amplifying circuit, a short circuit protection circuit, a current sampling circuit, a voltage sampling circuit and an adjusting pipe, wherein the starting circuit delivers the input voltage sourceinto the reference voltage circuit; the reference voltage circuit provides the adjusted reference voltage to the comparison amplifying circuit; an output end of the adjusting pipe is connected in series with the current sampling circuit; the current sampling circuit feeds back the sampled output current signal to the comparison amplifying circuit; the voltage sampling circuit feeds back the sampled output voltage signal to the comparison amplifying circuit; the comparison amplifying circuit processes the output current signal and the output voltage signal and delivers to a control end of the adjusting pipe so that the adjusting pipe works in a linear area and the aim of current limiting and voltage regulation is achieved; and the short circuit protection circuit processes the acquired output voltage signal and delivers to the control end of the adjusting pipe so that the adjusting pipe is adjusted from the linear area to a shutoff area and the aim of short circuit protection is achieved.

The invention provides a poly-silicon resistor structure and a production method thereof. According to the invention, the production method of the poly-silicon resistor structure capable of adjusting resistance and temperature coefficient of a poly-silicon resistor comprises the following steps of: forming an insulation area in a substrate, wherein the insulation area is exposed or extends out of the surface of the substrate; forming a first poly-silicon layer on the surface of a silicon wafer, wherein the first poly-silicon layer covers the insulation area, and is an in-situ doped n-type poly-silicon layer; injecting P-type doped ions into the first poly-silicon layer, so as to neutralize N-type doped ions in the former first poly-silicon layer; etching the first poly-silicon layer subjected to an injection, so that the first poly-silicon layer on the insulation area is reversed; isolating the first poly-silicon layer from a second poly-silicon layer formed next; forming the second poly-silicon layer on the surface of the silicon wafer; and etching the second poly-silicon layer.

The invention discloses a transmission detection device for a radio frequency terminal and a control method thereof. The device comprises a radio frequency feedback receiver and a calibration controller. The output end of the radio frequency feedback receiver is connected with the calibration controller. The radio frequency feedback receiver comprises a test signal generator, a gating switch and apreprocessing circuit. The input end of the preprocessing circuit is selectively connected with the test signal generator or a detection point of a radio frequency terminal through the gating switch.The preprocessing circuit is used for preprocessing an input signal. The output end of the preprocessing circuit is taken as the output end of the feedback receiver. The calibration controller comprises a digital signal processor. The digital signal processor is used for controlling the gating switch of the feedback receiver and calibrating the radio frequency feedback receiver or the radio frequency terminal according to an output signal of the radio frequency feedback receiver. The accuracy of the device and the control method are relatively high.

The disclosed Rb-atom frequency scale digital servo comprises: a filter amplification circuit with input end connected with light-detection signal output end of the frequency scale system and output end connected with input end of a SCM, the SCM with output end for lock indication and SP10 port isolated by a optical-coupling circuit and connected to spi port of a 20-bit ADC, a voltage reference circuit with output connected ADC voltage reference input, and the output of ADC connected with the input of an isolation amplification circuit. This invention overcomes defects in prior art, and fit to precise control and fast lock.

The invention provides an MEMS wafer level vacuum package structure and a manufacturing method thereof. The package structure comprises a silicon cover plate and an MEMS wafer with a movable structure, wherein a vertical through hole is formed on the cover plate, the through hole is internally filled with a conductive material, a bonding surface of the cover plate is provided with a groove, a layer of getter film is arranged at the bottom of the groove, and the silicon cover plate and the MEMS wafer with the movable structure form the vacuum package structure by wafer bonding. The manufacturing method provided by the invention comprises the following steps: at first, manufacturing the through hole on the cover plate, and filling the conductive material in the hole; and then, forming the groove on the bonding surface, depositing a layer of getter film on the bottom of the groove, depositing a layer of multilayer metal film in a bonding area, and wafer bonding the cover plate with the MEMS wafer with the movable structure in a vacuum environment. According to the MEMS wafer level vacuum package structure provided by the invention, the groove with the getter and the through hole are formed on the silicon cover plate to export an electrode from the closed groove without carrying out wire bonding, so that the procedures are simple, meanwhile, the vacuum maintenance ability in the package structure is improved, contamination of granules to the movable structure during cutting is avoided, and performance of the device is guaranteed.

The invention relates to a functional thin film material preparing technology, which adopts improved ion beam amplify deposited method to make the film and combines the subsequent crystallization and annealing to achieve the impurity element even immersing and the effective place-replacing to vanadium so that the phase starting temperature of the thin film reduces to 12-16 deg. It adjusts the argon / hydrogen ratio film craft and crystallizing heat treatment condition so that when the polycrystalline VO2 thin film transfers to the mental phase from the semiconductor phase, the change of the resistance ratio over 2 magnitude orders.

The invention discloses a bandgap reference circuit which comprises a starting circuit, a PTAT (Proportional To Absolute Temperature) current generating circuit and an output buffer and reference voltage generating circuit, wherein the output buffer and reference voltage generating circuit comprises two triodes and three mirror image circuits which form mirror images together with PTAT current, drain electrodes of a first NMOS (N-channel Metal Oxide Semiconductor) tube and a second NMOS tube are respectively connected with the second mirror image circuit and the third mirror image circuit, and a grid electrode and the drain electrode of the first NMOS tube are connected with a grid electrode of the second NMOS tube; the first and second triodes are respectively connected between source electrodes of the first and second NMOS tubes and the ground, and the first mirror image circuit is connected with the source electrode of the first NMOS tube; an output path comprises a first PMOS (P-channel Metal Oxide Semiconductor) tube and a first resistor, a grid electrode of the first PMOS tube is connected with the drain electrode of the second NMOS tube, the first resistor is connected between a drain electrode of the first PMOS tube and the source electrode of the second NMOS tube, and reference voltage is output by the drain electrode of the first PMOS According to the bandgap reference circuit, the driving capability of an output end can be increased, and a temperature coefficient can be improved.

The invention relates to a high-performance rare earth composite ferrite with low temperature coefficient and a manufacturing process technology thereof, which is characterized in that: (1) burdening is carried out according to a stoichiometry mol ratio that is as follows: Sr1-XPX (Fe12-YMy) 2O19, wherein, X is less than or equal to 0.55 and is more than or equal to 0.03; Z is less than or equal to 1.3 and is more than or equal to 0.6; M is equal to Zn, Ca, Al, Co and Si; evenly mixing, pelleting, sintering at a temperature of 1190 to 1210 DEG C for 1 to 1.5h, grinding, adding with dimethylbenzene, molding in a magnetic field and multi-section sintering at a temperature of 1210 to 1240 DEG C are carried out in sequence; (2) according to Ba1-XPX (Fe12-YMY) 2O19 (wherein, X, Z and M are the same as (1)), preburning at a temperature of 1280 to 1295 DEG C for 2h, milling, molding in a magnetic field and multi-section sintering at a temperature of 1000 DEG C and 1150 DEG C to 1300 DEG C are carried out in sequence. Temperature coefficient is improved and magnetic performance is increased. High-quality ferrites with high performance and low temperature coefficient are obtained.

A laminate includes an insulating substrate, and a temperature-sensitive resistor made of crystals of a metal based on a platinum group element and laminated on the insulating substrate; and has a percentage of (111) planes of crystals oriented at 10° or less from the normal direction (ND direction) in a layer of the temperature-sensitive resistor being 90% or more. By controlling the orientation of crystals forming the temperature-sensitive resistor, laminates suitable as a thin-film sensor, thin-film sensors including the laminate, thin-film sensor modules including the thin-film sensor, and methods for producing the thin-film sensors are provided.

The invention provides a micro-current amplifier comprising a plurality of micro-current amplification branch circuits with different gains and a multipath electronic switch connected with the micro-current amplification branch circuits, wherein each micro-current amplification branch circuit comprises a photodetector, a matched resistor and a current-voltage converting circuit which are sequentially connected; and part of the micro-current amplification branch circuits also comprises DC amplifiers, and the input ends of the DC amplifiers are connected with the output ends of the current-voltage converting circuits. The invention has the advantages of low disturbance and high circuit reliability, and the like and can measure a rapidly changed weak signal in a wide range.

The invention relates to a high-accuracy band gap reference voltage source. The high-accuracy band gap reference voltage source is formed by connecting an operational amplifier OP, a plurality of PMOS transistors PM, a plurality of NMOS transistors NM, a plurality of PNP triodes Q and a plurality of resistors R; a method of respectively carrying out temperature compensation in positive and negative temperature intervals is adopted to respectively shunt a current by the NMOS tubes on the resistors and the triodes so as to fulfill the aim; by introducing a negative feedback between the operational amplifier OP and a power supply VCC, a voltage rejection ratio of the band gap reference voltage source is improved, so that the band gap reference voltage source obtains a high-accuracy reference voltage; the high-accuracy band gap reference voltage source has a temperature coefficient of 8.20 ppm / DEG C and below within a temperature range from minus 40 to 120 DEG C, has a power supply voltage rejection ratio of 83.0dB under the low frequency and can be widely applied to a civil or military integrated circuit required to be supplied with a high-accuracy reference potential.

The use of silicon or vanadium oxide nanocomposite consisting of graphene deposited on top of an existing amorphous silicon or vanadium oxide microbolometer can result in a higher sensitivity IR detector. An IR bolometer type detector consisting of a thermally isolated nano-sized (<one micron feature size) electro-mechanical structure comprised of Si3N4, SiO2 thins films, suspended over a cavity with a copper thin film reflecting surface is described. On top of the suspended thin film is a nanostructure composite comprised of graphene monolayers, covered with various surface densities of VoXy or amorphous nanoparticles, followed by another graphene layer. The two conducting legs are connected to a readout integrated circuit (ROIC) fabricated on a CMOS wafer underneath. The nanostructure is fabricated after the completion of the ROIC process and is integrate able with the CMOS process.

The invention discloses a high-precision constant flow source circuit which consists of two parts of a PTAT current generation circuit and a core circuit, wherein the PTAT current generation circuit generates a PTAT current with a certain negative temperature coefficient for the core circuit based on a principle of a BANGAP circuit. The core circuit mainly comprises a control MOS pipe, a positive temperature coefficient resistor and a current mirror image circuit and obtains a high-precision and low temperature coefficient constant current through a certain control relation by utilizing the PTAT current provided by a pre-stage circuit. The invention has the advantages of providing the high-precision and low temperature coefficient constant current for a relevant application occasion, and not only improves the overall performance of the application circuit, but also simplifies a peripheral circuit and reduces the application cost compared with a conventional method. The invention adopts a CMOS process, has good processing compatibility, saves the cost and better meets the requirement of the industrialization production of integrated circuits.

The invention provides a high-precision temperature measuring system based on a micro resonator, which comprises a micro resonator, a driving circuit, a frequency measuring circuit and a temperature calibration circuit, wherein the micro resonator is composed of a double-end fixedly supported tuning fork, a plate capacitor and a substrate, the driving circuit and the micro resonator form a closed-loop circuit, the micro resonator is ensured to generate stable oscillation signals, the frequency measuring circuit measures the signal frequency changing along with the temperature, a current environment temperature value is converted through the temperature calibration circuit. According to the micro resonator in the high-precision temperature measuring system, the double-end fixedly supported tuning fork is driven by the plate capacitor, thereby being high in sensitivity and good in linearity, and having very high measurement accuracy.