639 results about "Vanadium oxide" patented technology

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at pressure less than atmospheric pressure; a pump-out / evacuation tube extending at least partly into an aperture in one of the substrates; and a pump-out / evacuation tube seal. The pump-out / evacuation tube seal may include at least one of: (a) from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, wherein the pump-out tube seal comprises more TeO3 than TeO4 by wt. %; and / or (b) tellurium oxide and from about 10-50 wt. % vanadium oxide, wherein the pump-out tube seal by wt. % comprises more tellurium oxide than vanadium oxide, and wherein the vanadium oxide comprises VO2 and V2O5, and wherein more V in the pump-out tube seal is in a form of VO2 than V2O5. A substantially donut-shaped laser beam may be used to heat pump-out tube material in order to form a pump-out tube seal.

The invention discloses a light-operated reconfigurable metasurface for full-space terahertz wave beam regulation and control, solves the problem of how to provide ubiquitous full-space wave beam coverage for multi-user wireless communication application, and belongs to the field of artificial electromagnetic metamaterials. The super subunit comprises N super subunits which are arranged periodically, each super subunit comprises 4 * 4 identical coding units, corresponding codes are '0' and '1' respectively when illumination exists or not, and the phase response difference of the two coding units at 0.7 THz is 180 degrees. Each super subunit comprises five layers, the third layer is used for switching between reflection and transmission, when vanadium dioxide is in a medium state, the super surface is in a transmission mode, and when vanadium dioxide is in a metal state, the super surface is in a reflection mode. The first layer, the second layer, the fourth layer and the fifth layer are used for controlling the amplitude and the phase of the total-space terahertz wave, the conductivity of the photosensitive silicon pattern is changed under excitation of light with different intensities, the phase of the total-space terahertz wave beam is effectively modulated, and one-bit terahertz information coding is achieved.

The invention discloses a selective separation and resource utilization method of chromium in a sodium vanadium solution, which comprises the following steps: S1, measuring a predetermined volume of sodium vanadium solution, and heating to a predetermined temperature; s2, a preset amount of divalent manganese salt is added into the sodium vanadium solution, so that hexavalent chromium is subjected to a reduction reaction; s3, after the reaction is finished, carrying out solid-liquid separation and washing to obtain chromium and vanadium removed liquid and precipitates; s4, vanadium precipitation and calcination are conducted on the chromium and vanadium removal liquid, and a vanadium oxide product is obtained; and calcining the precipitate at high temperature to obtain the chromium-manganese oxide. According to the method, the sodium vanadium solution is used as a raw material, the divalent manganese salt is used as a reducing agent, hexavalent chromium is reduced into trivalent chromium, the trivalent chromium generates chromium hydroxide precipitate under the alkaline condition, vanadium is not reduced and is reserved in the solution, and efficient separation of vanadium and chromium is achieved; the dechromed vanadium liquid is subjected to vanadium precipitation and calcination, and a vanadium oxide product is obtained; after the precipitate is subjected to high-temperature calcination, chromium-manganese oxide is obtained and can be used for preparing chromium-manganese alloy, and resource utilization is achieved.

The invention belongs to the field of hydrometallurgy, and particularly discloses a high-purity vanadium oxide electrode and a preparation method thereof. The method comprises the following steps: pre-treating the alkaline vanadium leaching solution by using an activated aluminum oxide adsorption column to obtain a pre-treated solution; adding a composite impurity removal agent taking modified lignosulfonate as a main agent into the pretreatment liquid for primary impurity removal to obtain primary impurity-removed filtrate; adding a calcium hydroxide suspension and a flocculating agent into the primary impurity-removed filtrate for secondary impurity removal to obtain secondary impurity-removed filtrate; purifying the secondary impurity-removed filtrate by using an ion exchange column to obtain a purified solution; ammonium salt is added into the purified liquid for vanadium precipitation, and ammonium metavanadate crystals are obtained; calcining the ammonium metavanadate crystal to obtain high-purity vanadium pentoxide; and preparing the high-purity vanadium oxide electrode by using the high-purity vanadium pentoxide. According to the scheme, the high-purity vanadium pentoxide is prepared by taking the alkaline vanadium leaching solution as a raw material through a multi-stage deep impurity removal process, and the high-purity vanadium oxide electrode is prepared by taking the alkaline vanadium leaching solution as the raw material.

The invention relates to the field of chemical industry, and discloses a method for preparing high-purity vanadium oxide by purifying ammonium vanadate, which comprises the following steps: adding a carbonate solution into ammonium vanadate, stirring, and heating to 75-95 DEG C to obtain a vanadium-containing return solution; keeping the temperature of the vanadium-containing return solution, and adding a calcium salt impurity removal agent to obtain a vanadium-containing purified solution and first-stage impurity removal slag; oxalate is added into the vanadium-containing purified liquid, the temperature of the vanadium liquid is kept, and deeply-purified vanadium liquid and second-stage impurity removal slag are obtained; cooling the deeply purified vanadium liquid to 5-35 DEG C, stirring and reacting, and then carrying out solid-liquid separation to obtain ammonium metavanadate and secondary vanadium precipitation supernatant; adding pure water into the ammonium metavanadate product, pulping, stirring, and heating to 80-95 DEG C to obtain a secondary return solution; the pH of the secondary return solution is adjusted to 1.6-2.0, the temperature is raised to 95-98 DEG C, and ammonium polyvanadate and a third-section vanadium precipitation supernatant are obtained; and drying the ammonium polyvanadate, raising the temperature to 500-600 DEG C in an oxidizing atmosphere, and carrying out heat preservation and calcination to obtain a vanadium pentoxide product. The method can be used for preparing a high-purity vanadium pentoxide product.

The invention relates to the technical field of hydrogen energy, and provides a vanadium oxide catalytic magnesium-based hydrogen storage material based on alkali metal enhancement and a preparation method. The material is prepared from spherical MgH2 powder and lamellar XV6O15 (at) C powder through a high-energy ball milling method, wherein X is one of alkali metals Li, Na and K. The material has a nanoscale composite structure, and the hydrogen storage performance can be remarkably improved. The preparation method comprises the following steps: 1) preparing XV6O15 (at) C nano powder through acid etching, alkali metal modification and heat treatment; and 2) mixing the powder with MgH2 in a protective atmosphere, and preparing the composite material by adopting high-energy ball milling. Results show that the catalyst improves the hydrogen absorption and desorption rate of MgH2, the hydrogen storage temperature is reduced to 50 DEG C for hydrogen absorption, and the hydrogen is rapidly desorbed at 200-225 DEG C. The hydrogen storage dynamics and temperature performance are remarkably optimized, an effective strategy is provided for design and application of a novel magnesium-based composite hydrogen storage material, and the method is suitable for hydrogen energy industrial application.

The invention provides a preparation method of a vanadium electrolyte for an all-vanadium redox flow battery, the vanadium electrolyte and application. The method comprises the following steps: (1) dissolving concentrated sulfuric acid in water to obtain a sulfuric acid solution with a preset concentration, then adding vanadium pentoxide into the sulfuric acid solution, and reacting to obtain a first vanadium solution; (2) the temperature of the first vanadium solution is kept to be the preset temperature, low-valence vanadium oxide is added into the first vanadium solution for reaction, water or hydrochloric acid is supplemented in the reaction process, a second vanadium solution is obtained, and the low-valence vanadium oxide is vanadium oxide with the valence of 3-3.5; and (3) filtering the second vanadium solution to obtain the vanadium electrolyte. The method provided by the invention can save energy consumption, reduce cost and improve dissolution efficiency.

The invention discloses a bifunctional chiral metamaterial surface capable of switching polarization conversion and wave absorption, and belongs to the technical field of electromagnetic metamaterials. The method is used for solving the problem that most existing chiral super-structure surfaces cannot realize dynamic adjustability and quantitative controllability and cannot have dual functions of polarization conversion and wave absorption at the same time. The super-structure surface unit structure is composed of a graphene film layer, a gold-vanadium dioxide resonance layer, a silicon dielectric layer and a bottom-layer continuous gold film. Switching of two functions of polarization conversion and wave absorption is realized by changing the conductivity of vanadium dioxide; polarization conversion and dynamic regulation and control of the wave absorbing efficiency are realized by changing the Fermi level of the graphene; quantitative controllability of polarization conversion and a wave absorbing function is realized by controlling a function weighting function. Besides, the chiral super-structure surface also has the advantages of incident angle robustness, small thickness and small size, has double functions of broadband, and has potential application value in the fields of optical devices, communication equipment, biomedical sensors and the like.

The invention belongs to the field of semiconductor bridge current protection, and particularly relates to a semiconductor bridge current protection method based on a vanadium dioxide thick film thermistor. Firstly, copper, nickel and gold interdigital electrodes are deposited and grown on an aluminum oxide ceramic substrate, then a methanol solution of vanadyl acetylacetonate is sprayed on the surface of the heated interdigital electrode, a vanadium dioxide thermistor device is obtained, the vanadium dioxide thermistor device is connected with a semiconductor bridge in parallel, and current protection of the semiconductor bridge thermistor is achieved. Vanadium dioxide with a single valence state can be synthesized by adjusting the synthesis method and process, M-phase vanadium dioxide is synthesized on the interdigital electrode in one step, the vanadium dioxide prepared by the method avoids the tedious process that vanadium dioxide powder is firstly prepared and then transplanted to the surface of the interdigital electrode, and the preparation method is simple and convenient to operate. And the vanadium dioxide can be more stably combined on the surface of the interdigital electrode.

The invention provides a coding metasurface with terahertz wave absorption and reflection functions and application, the coding metasurface comprises at least one coding unit arranged in an array, each coding unit comprises a top resonance layer, a dielectric layer and a metal reflection layer which are sequentially arranged from top to bottom, the top resonance layer comprises a graphene resonance layer and a vanadium dioxide phase change layer, and the dielectric layer comprises a dielectric layer and a metal reflection layer. The graphene resonance layer comprises square graphene, the vanadium dioxide phase change layer comprises a square vanadium dioxide outer ring and a vanadium dioxide strip embedded in the vanadium dioxide outer ring, the vanadium dioxide outer ring is located on the inner side of the graphene, and the square edge of the vanadium dioxide outer ring and the square edge of the graphene are arranged in parallel at an interval; wherein the vanadium dioxide strips are arranged at the diagonal positions of the vanadium dioxide outer ring and are arranged at intervals with the vanadium dioxide outer ring, the advantages of a wave-absorbing metasurface and a reflection coding metasurface are integrated, and the signal generation power of 6G communication is greatly optimized.

A vacuum insulating panel may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first substrate and the second substrate, the seal comprising a first seal layer; wherein the first seal layer comprises tellurium oxide and vanadium oxide; wherein the first seal layer comprises, on a wt. %, more tellurium oxide than vanadium oxide, and has a density of from about 2.8-4.0 g / cm3.

The invention discloses a vanadium oxide-based supported platinum catalyst and a preparation method and application thereof, and the preparation method comprises the following steps: a) carrying out high-temperature heat treatment on a V precursor to obtain orange V2O5 carrier powder; b) adding V2O5 powder, a Pt metal precursor and a sacrificial reagent into the solution, carrying out ultrasonic treatment, stirring, and reacting under the irradiation of a xenon lamp to obtain a dark brown suspension; c) centrifuging, washing, drying, grinding and roasting the dark brown suspension to obtain dark brown powder; and d) carrying out three times of high-temperature heat treatment on the dark brown powder under different protective gases, and sequentially carrying out three processes of oxidation, reduction and partial oxidation to obtain the vanadium oxide-based platinum-loaded catalyst. The catalyst prepared according to the invention is applied to a carbon monoxide oxidation reaction, and has the advantages of excellent catalytic performance, long-time stability and good recycling stability at a high space velocity.

The invention provides a vanadium dioxide composite electrode material and a preparation method and application thereof. The method comprises the following steps: taking vanadium leachate as a raw material, reacting with a reducing agent under the condition that the pH value is 2-6, mixing the obtained tetravalent vanadium solution with a precipitator, carrying out precipitation reaction, filtering, washing and drying the precipitate to obtain vanadium dioxide precursor particles, grafting a silane coupling agent with sulfydryl onto the surface of the vanadium dioxide precursor through coupling reaction, and carrying out vacuum drying to obtain the vanadium dioxide precursor. Silver ions are chelated under the action of sulfydryl, and silver elementary substances are deposited on the surfaces of vanadium dioxide precursor particles through reduction. And coating the composite slurry of the vanadium dioxide precursor and the carbon nanotube on the surface of a substrate, and calcining to obtain the vanadium dioxide composite electrode material. The vanadium dioxide composite electrode material is used as a negative electrode material of a battery, and the obtained battery is found to have excellent stability and reaction dynamic characteristics.

The invention relates to a phase change regulation and control Van der Waals junction type transistor infrared detection chip and a preparation method and application thereof. The unit structure of the Van der Waals junction type transistor infrared detection chip comprises a two-dimensional material layer, a metal electrode, a vanadium dioxide micro-nano structure, an electrical channel and a CMOS reading circuit from top to bottom. The metal electrode comprises a metal grid electrode, an auxiliary electrode, a metal source electrode and a metal drain electrode; two ends of the vanadium dioxide micro-nano structure are respectively connected with the metal grid electrode and the auxiliary electrode, and two ends of the two-dimensional material layer are respectively connected with the metal source electrode and the metal drain electrode; and the electrical channel is connected with the metal electrode and the CMOS reading circuit on the substrate. According to the infrared detection chip prepared by the invention, the response speed of a device is remarkably improved, the response range is widened, ultra-sensitive detection is realized, a self-powered infrared detection chip can be realized, and the infrared detection chip has important significance for reducing the power consumption and the cost of the device.

The invention discloses a vanadium dioxide-based spin coupling and decoupling dynamic switching metasurface. The unit structure of the metasurface is divided into three reflecting layers; a dielectric layer; the metal layer is of an S-shaped structure and comprises a rectangle in the middle and circular arcs at the two ends, the rectangle is made of gold, and the circular arcs are made of vanadium dioxide; when vanadium dioxide is in a metal state, adjusting an opening angle alpha between the arc and the rectangle and a rotation angle theta of the metal layer around an X axis, and realizing decoupling of left-handed polarized light and right-handed polarized light through combination of a PB phase and a transmission phase; when vanadium dioxide is in an insulated state, the PB phase is regulated and controlled only by rotating the angle theta, and coupling of left-handed polarized light and right-handed polarized light is achieved. Compared with other coding metasurfaces, the modulation mode is simpler, the design is more flexible, the functions are more diversified, the defect that the function of the metasurface is fixed is overcome, the coupling characteristic and the decoupling characteristic of left-handed and right-handed polarized light are integrated together, and the application prospect of a coding metasurface device is expanded.

The invention relates to the technical field of vanadium slag roasting, and discloses a method for preparing high-purity vanadium oxide from vanadium slag, which comprises the following steps: carrying out calcification roasting and acid leaching on the vanadium slag to obtain an acidic vanadium-containing solution; adding an excessive impurity removal agent into the acidic vanadium-containing solution to remove impurity ions in the solution; adding a reducing agent into the acidic vanadium-containing solution to reduce pentavalent vanadium into tetravalent vanadium; extracting the acidic vanadium-containing solution by adopting an extracting solvent to obtain a negative vanadium organic phase; washing the negative vanadium organic phase; carrying out back extraction on the washed negative vanadium organic phase by using a back extraction agent to obtain back extraction raffinate and a blank organic phase, wherein the blank organic phase is recycled as an extraction solvent; and precipitating the reverse extraction raffinate, drying and calcining to obtain vanadium pentoxide. The method is simple in process, low in cost and environmentally friendly, 95% or above of vanadium in the vanadium liquid can be recycled, and the purity of the obtained product vanadium pentoxide is about 99%.

The invention discloses an AgVO material with modified vanadium dioxide doped with silver ions, a preparation method of the AgVO material and application of the AgVO material in an aqueous zinc ion battery. The silver ion doped modified vanadium dioxide AgVO material is prepared by the following steps: firstly, enabling vanadium pentoxide and anhydrous oxalic acid to react in water to obtain a clear dark blue solution; and then carrying out hydrothermal reaction on the dark blue solution and silver nitrate at 175-185 DEG C to obtain the silver vanadium oxide composite material with a nanofiber bundle microstructure, wherein the silver vanadium oxide composite material is formed by doping silver ions on the surface and inside of a VO2 material. The silver ion doped modified vanadium dioxide AgVO material provided by the invention has a nanofiber bundle microstructure, and an aqueous zinc ion battery taking the silver ion doped modified vanadium dioxide AgVO material as a positive electrode active material has excellent capacity, cycling stability and rate capability and excellent electrochemical performance.

The invention relates to a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate, wherein the semiconductor substrate is provided with a first surface and a second surface which are oppositely arranged; a hole transport layer and an electron transport layer, the hole transport layer and the electron transport layer are arranged on the first surface at an interval, the material of the hole transport layer comprises vanadium oxide, and the material of the electron transport layer comprises titanium oxide; the first passivation layer is located on the surface, away from the semiconductor substrate, of the hole transport layer; and the second passivation layer covers the surface, far away from the semiconductor substrate, of the first passivation layer, the surface, far away from the semiconductor substrate, of the electron transport layer and the first surface. According to the solar cell, a good electric contact effect between the electrode and the semiconductor region can be achieved, and therefore the high photoelectric conversion efficiency of the IBC solar cell is achieved.

The invention discloses a VO2-based polarization modulator, a polarization characteristic analysis method and a modulation method, and belongs to the field of optical devices, the VO2-based polarization modulator comprises a metal substrate layer, a Si dielectric layer and a metasurface unit periodically arranged at the top end of the Si dielectric layer, and the metasurface unit is of a chiral structure formed by compounding VO2 and metal; each metasurface unit comprises a middle structure composed of a first middle metal frame and a second middle metal frame and side metal strips arranged on the two sides of the middle structure, and VO2 is embedded in the middle positions of the opposite sides of the first middle metal frame and the second middle metal frame. Metal protrusions are connected to the middle positions of the opposite sides of the first middle metal frame and the second middle metal frame. By adopting the VO2-based polarization modulator, the polarization characteristic analysis method and the modulation method, the polarization state of incident light can be adjusted by the metasurface by adjusting the conductivity of vanadium dioxide, and a dynamic tunable function is realized.

An optical component includes a substrate and an anti-reflective film. The substrate has an aspherical surface through which light passes. The anti-reflective film is disposed at least on the aspherical surface and includes a nanostructure layer and an intermediate layer. The nanostructure layer includes ridge-like protrusions that are non-directionally extended. A bottom of the ridge-like protrusions is closer to the substrate than a top of the ridge-like protrusions. The ridge-like protrusions gradually taper from the bottom toward the top. An average structural height of the ridge-like protrusions ranges from 108 to 368 nm. The intermediate layer is between the nanostructure layer and the substrate. A main component of the nanostructure layer is aluminum oxide. The nanostructure layer includes a metallic doping agent at least partially distributed inside the ridge-like protrusions. The metallic doping agent includes at least one of titanium, vanadium, chromium, titanium oxide, vanadium oxide, and chromium oxide.

The invention discloses a micron-sheet rare-earth-based denitration and chlorobenzene removal catalyst as well as a preparation method and application thereof. The catalyst takes micron-sheet reduced graphene oxide as a carrier, a composite oxide of cerium oxide and vanadium oxide as an active component and a hexahydrotriazinyl covalent organic framework as an active site protective agent; on the basis of the mass of the carrier, the mass percentage of the active component is 5-10%, and the mass percentage of the active site protective agent is 1-5%. The catalyst synthesized by the method has the advantages of high specific surface area, difficult deposition of ammonium bisulfate, long service life, stable activity and the like, and can realize the target of low-temperature denitration and chlorobenzene removal in the non-electric industry.

The present disclosure provides a process for the separation and purification of radium and actinium from acidic solution using composite adsorbents. The process includes preparing polyoxometalates (POMs)-based mesoporous composite metal-infused resins using phosphate recovered from waste buffer solution. The resins are prepared using a modified sol-gel technique to form inorganic composite metal-oxide clusters. Embodiments of the resins include silica-coated composite metal oxide particles, including antimony-vanadium oxide particles, and tungsten-doped mesoporous titanium oxide particles. The resins have differing adsorption affinities for actinium, radium, and other metal ions and may thus be utilized for selectively separating radium and actinium from irradiated thorium targets.

The invention discloses a vanadium oxide material for an aqueous zinc ion battery. The material is constructed by self-assembling small organic molecules on the surface of vanadium oxide at room temperature under the dual action of hydrogen bonds and hydrophilic functional groups. When the material is used as a positive electrode material, on one hand, small molecules are tightly adsorbed on the outer layer of the vanadium-based material through hydrogen bond acting force to inhibit dissolution and structure collapse of the vanadium-based material; on the other hand, the tail ends of the small organic molecules can adsorb water molecules, so that structure collapse caused by excessive water molecules rushing into the interlayer of the vanadium-based positive electrode material is prevented. In the electrochemical reaction period, the small molecular coating vanadium-based material shows high capacity and good cycling stability. The battery installed by the positive electrode material can stably circulate for 275 circles under the current density of 0.5 A g <-1 >, and the capacity can be kept at 270 mAh g <-1 >.

A vacuum insulating panel includes may include: a first substrate; a second substrate; a plurality of spacers provided in a gap between at least the first and second substrates, wherein the gap is at a pressure less than atmospheric pressure; a seal provided between at least the first and second substrates, the seal comprising a first seal layer and / or a second seal layer; and wherein the first seal layer may include from about 20-80 wt. % tellurium oxide, the tellurium oxide comprising TeO4 and TeO3, and wherein the first seal layer comprises more TeO3 than TeO4 by wt. %.

[Problem] To provide an organic-inorganic hybrid coating film which contains a large amount of silver ions, copper ions, and zinc ions, which has an excellent antibacterial / antiviral function, antifungal function, and a deodorization function, which makes it possible to reliably eliminate germs, various viruses, various mold fungi and which makes it possible to reliably remove unpleasant odors. [Solution] A organic-inorganic hybrid coating film that is a glass coating film which contains silicon oxide (SiO2) as a base, wherein in the coating film, glass particles are electrically conductive glass which includes at least one type of ion from among silver ions (Ag+), copper ions (Cu2+), and zinc ions (Zn2+), and the glass particles include glass which contains, as a base, at least one oxide from among vanadium oxide (V2O5), tungsten oxide (WO3), and molybdenum oxide (MoO3), and phosphorus oxide (P2O5).

The invention belongs to the technical field of trichlorosilane purification, and discloses an adsorbent for adsorbing phosphorus impurities in trichlorosilane and a preparation method and application thereof.The preparation method comprises the steps that activated carbon is immersed in a solution containing ammonium metavanadate and oxalic acid, ultrasonic treatment and drying are conducted, and a vanadium oxide / carbon material mixture is obtained; calcining the vanadium oxide / carbon material mixture, and performing reduction treatment to obtain the oxygen vacancy-rich activated carbon loaded vanadium oxide adsorbent. The activated carbon loaded vanadium oxide adsorbent rich in oxygen vacancies is prepared by using a dipping-calcining-reducing method, and phosphorus impurities are adsorbed and removed by using the interaction of the activated carbon loaded vanadium oxide adsorbent and PCl3. The active carbon loaded vanadium oxide adsorbent rich in oxygen vacancies interacts with PCl3, so that trace PCl3 can be efficiently removed.

A solar cell and a method for preparation the solar cell are provided. The solar cell includes a semiconductor substrate, a hole transport layer and an electronic transport layer, a first passivation layer and a second passivation layer. The semiconductor substrate includes a first surface and a second surface opposite to each other. The hole transport layer and the electronic transport layer are disposed on the first surface at interval. A material of the hole transport layer includes vanadium oxide, and a material of the electronic transport layer includes titanium oxide. The first passivation layer is located on a surface of the hole transport layer away from the semiconductor substrate. A surface of the first passivation layer away from the semiconductor substrate, a surface of the electronic transport layer away from the semiconductor substrate, and the first surface are all covered by the second passivation layer.

The invention provides sintering flue gas denitration activated carbon and a preparation method thereof.The preparation method comprises the steps that coal-based activated carbon raw material powder and an aqueous solution of a nitrogen-containing compound and a phosphorus-containing compound are evenly mixed, impregnated and dried, and a nitrogen-phosphorus co-doped precursor is obtained; blending the catalytic components to obtain raw material strips; primarily forming pores, and activating for the first time in a water vapor atmosphere; carrying out secondary loading and pore regulation, and carrying out secondary activation to obtain a secondary carbon body; and carrying out heat treatment on the secondary carbon body in an oxygen-containing atmosphere to convert the loaded metal precursor into a metal oxide. According to the invention, through a cascade catalytic network constructed by nitrogen and phosphorus doping and titanium, tungsten and vanadium oxides and an optimized pore channel formed by step-by-step activation of water vapor and carbon dioxide, the denitration efficiency of the catalyst breaks through 80% and is far higher than that of common activated carbon. The sintering flue gas denitration system has high activity and high stability, can greatly reduce the series number of denitration towers, obviously reduces the system resistance and operation energy consumption, and provides an efficient scheme for solving the problems of low sintering flue gas denitration efficiency and high cost.

The invention discloses a nickel-vanadium oxide catalyst, a preparation method thereof and a method for preparing propylene by catalyzing oxidative dehydrogenation of propane. The invention aims to provide the preparation method of the nickel-vanadium oxide catalyst, and the nickel-vanadium oxide catalyst has relatively high selectivity for catalyzing oxidative dehydrogenation of propane to prepare propylene under a low-temperature condition. The technical scheme is as follows: (1) preparing a vanadium trichloride aqueous solution; (2) adding nickel chloride hexahydrate and urea into the vanadium trichloride aqueous solution, and stirring for 1 hour at normal temperature; (3) putting the obtained solution into a reaction kettle for hydrothermal reaction; (4) centrifuging, washing with deionized water, and drying in vacuum to obtain a solid product; and (5) calcining the solid product at 600 DEG C for 4 hours to obtain a finished product. Belongs to the technical field of thermocatalytic materials and environmental protection.

The invention discloses a molybdenum-vanadium-aluminum intermediate alloy and a low-cost preparation method thereof. The molybdenum-vanadium-aluminum intermediate alloy comprises the following chemical components in percentage by mass: 39-41% of Mo, 39-41% of V and the balance of Al. The method comprises the following steps: uniformly mixing vanadium oxide (tablets replace powder), molybdenum trioxide, metal aluminum, calcium fluoride, calcium oxide and a cold material according to a mass ratio of (28-32): (24-26): (32-35): (10-13): (1.5-4): (5-10); then putting the mixture into a graphite crucible for tamping treatment; and finally, the metal powder is directly ignited for a reduction reaction, and the molybdenum-vanadium-aluminum intermediate alloy can be obtained. According to the method, the recovery rates of the molybdenum and the vanadium are increased by adjusting the components and the ratio of the raw materials and the auxiliary materials and adopting a one-step aluminothermic reduction method, and the recovery rates of the molybdenum and the vanadium can reach 95 wt% or above and 96 wt% or above respectively.