51507results about How to "Reduce the temperature" patented technology

An electrosurgical instrument that allows precise modulation of active Rf density in an engaged tissue volume. The working end of the instrument has a tissue-contacting surface of a conductive-resistive matrix that is variably resistive depending on its temperature. The matrix comprises a positive temperature coefficient (PTC) polymeric material hat exhibits very large increases in resistivity as any local portion increases beyond a selected temperature. In a method of use, the polymeric PTC material senses the temperature of engaged tissue in a manner akin to pixel-by-pixel sensing and thereby changes its resistance in a corresponding pixel-by-pixel manner. The instrument further carries cooling means to cause accelerated thermal relaxation of the PTC matrix during use to make the engagement surface highly responsive to temperature changes that in turn alter the matrix between being electrically conductive and electrically resistive.

The invention relates to a preparation method of a porous fiber non-woven fabric. The aim of the preparation method is to improve the product performance of the conventional non-woven fabric, so that the non-woven fabric meets the requirements on high-precision and high-performance filter. The technical scheme is that the preparation method of the porous fiber non-woven fabric comprises the following steps in sequence: (1) uniformly mixing a polymer and a diluent to obtain a blend with 10 to 60 percent of polymer; (2) melting and extruding the blend in the step (1) by adopting a screw extruder granulator, and directly cooling and granulating in air; (3) producing master batches in the step (2) by melt-down equipment to obtain a primary non-woven fabric; (4) extracting to remove the diluent from the primary non-woven fabric in the step (3), performing pore-forming on fibers in the non-woven fabric, and drying to obtain the porous fiber non-wave fabric; (5) recovering mixed waste liquid of the diluent and an extraction agent for reuse.

The present invention relates to a transdermal drug delivery system comprising a dermal drug delivery patch and a heating element compartment securable to the dermal drug delivery patch. A freely transferrable heating element is securable within the heating element compartment. A drug can be administered transdermally using the present invention by placing the dermal drug delivery patch upon a patient's skin at an administration site. A heating element compartment is secured to the dermal drug delivery patch and a freely transferrable heating element is placed within the heating element compartment. The heating element provides controlled heat to the dermal drug patch and the patient's skin aid thereby improves dermal drug administration.

Low temperature electronic vaporization devices and method are described herein for emulating smoking wherein the devices generate an aerosol for inhalation by a subject by heating a viscous material that can have a tactile response in the mouth or respiratory tract.

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and / or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

A lighting device comprises, or consists essentially of, a housing, a solid state light emitter and conductive tracks. The conductive tracks are positioned on the housing and are coupleable with a power supply. The conductive tracks comprise a positive conductive track and a negative conductive track. Each of the solid state light emitters is in electrical contact with a positive conductive track and a negative conductive track. Another lighting device comprises a fixture and a solid state light emitter in which the fixture comprises conductive elements which are coupleable to at least one power supply and the solid state light emitter is mounted on the fixture. There is also provided a lighting device which provides light of an intensity which is at least 50 percent of its initial intensity after 50,000 hours of illumination.

An ultrasonic medical probe has an elongate shaft with a head portion having a distal end face oriented at least partially transversely to a longitudinal axis of the shaft. The head portion has a lateral surface extending substantially parallel to the longitudinal axis, the lateral surface being provided with outwardly or radially extending projections. The shaft of the probe is provided with an internal longitudinal channel or bore and at least one ancillary or tributary channel communicating at an inner end with the longitudinal channel or bore and extending to the lateral surface. The ancillary or tributary channel has an outer end disposed in a region about the projections. The projections may be finely configured and distributed so as to form a knurled surface on the head portion.

A method and apparatus is disclosed for heating of formations using fired heaters. Each fired heater may consist of two concentric tubulars emplaced in the formation, connected via a wellhead to a burner at the surface. Combustion gases from the burner go down to the bottom of the inner tubular and return to the surface in the annular space between the two tubulars. The two tubulars may be insulated in an overburden zone where heating is not desired. A plurality of fired heaters can be connected together such that the combustion gases from a first fired heater well are piped through insulated interconnect piping to become the air inlet for a second fired heater well, which also has a burner at its wellhead. This can be repeated for other heater wells, until the oxygen content of the combustion gas is reduced near zero. The combustion gas from the last fired heater well may be routed through a heat exchanger in which the fresh inlet air for the first heater well is preheated. A substantially uniform temperature is maintained in each heater well by using a high mass flow into the heater well.

A liquid material vaporization apparatus for a semiconductor processing apparatus includes: a vaporization tank; an inner partition wall disposed in the tank for dividing the interior of the tank into a charging compartment and a vaporization compartment which are liquid-communicatable with each other over an upper edge of the inner partition wall. A liquid material charged in the charging compartment overflows over the upper edge of the inner partition wall toward the vaporization compartment to store and vaporize the liquid material in the vaporization compartment.

Apparatus and method for forming a polycrystalline silicon thin film by converting an amorphous silicon thin film into the polycrystalline silicon thin film using a metal are provided. The method includes: a metal nucleus adsorbing step of introducing a vapor phase metal compound into a process space where the glass substrate having the amorphous silicon formed thereon is disposed, to adsorb a metal nucleus contained in the metal compound into the amorphous silicon layer; a metal nucleus distribution region-forming step of forming a community region including a plurality of silicon particles every metal nucleus in a plane boundary region occupied by the metal compound by a self-limited mechanism due to the adsorption of the metal nucleus; and an excess gas removing step of purging and removing an excess gas which is not adsorbed in the metal nucleus distribution region-forming step.

A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and / or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

A cooled electrosurgical system includes an electrosurgical device having at least one electrode for applying electrical energy to tissue. In one embodiment, the electrode includes an internal cavity in which a cooling medium such as water is contained. The internal cavity is closed at both ends of the device such that the cooling medium is contained within the electrode at the surgical site such that the cooling medium does not contact the tissue being treated. The electrosurgical device has an electrode and a heat pipe to conduct heat from the electrodes where substantially all heat conducted from the electrode through the heat pipe is dissipated along the length of the heat pipe. The heat pipe can have a thermal time constant less than 60 seconds and preferably less than 30 seconds.

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and / or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.

A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering atmosphere comprises an oxidizing gas and an inert gas such as argon. In order to prevent fixed electric charges from being generated in the film and to obtain an oxide film of good properties, the proportion of argon is adjusted to 20% or less. Alternatively, a gas including halogen elements such as fluorine is added to the above sputtering atmosphere at a proportion less than 20%. Hereupon, alkali ions and dangling bonds of silicon in the oxide film are neutralized by the halogen elements, whereby a fine oxide film is obtained.

A smokeless pipe comprises a bowl (1), a shank (2), a stem (3) with a bit (4) and an air channel (5) inside of the pipe, which is used for placing a carrier of a nicotine-containing or flavoring agent (10) and a heating unit (7) connected to a power supply (8). According to the invention at least one of elements (7) of a heating unit is arranged in the stem (3) and is shifted to the bit (4). The invention ensures preservation of the health of a pipe smoker while fully simulating the process of smoking.

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and / or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

Apparatus and methods for ablating, severing, cutting, shrinking, coagulating, or otherwise modifying a target tissue to be treated. In a method for treating a target tissue, an active electrode of an electrosurgical probe is positioned in at least close proximity to the target tissue in the presence of an electrically conductive fluid. A high frequency voltage is then applied between the active electrode and a return electrode, wherein, the high frequency voltage is sufficient to volumetrically remove (ablate), sever, or modify at least a portion of the target tissue. The probe comprises a multi-lumen shaft having a plurality of internal lumens, and a return electrode coil oriented substantially parallel to the shaft distal end. The active electrode may be in the form of a metal disc, a hook, or an active electrode coil. In the latter embodiment, the active electrode coil is typically arranged substantially orthogonal to the return electrode coil. Methods of making an active electrode coil, a return electrode coil, and an electrosurgical probe are also disclosed.

A resin composition for production of an optical element being adapted to form the optical element has a characteristics of which, when W1 / 2 (° C.) represents, regarding a crest portion in a loss factor / temperature curve obtained by measuring the loss factor of the resin composition relative to a change in the temperature, the width of the crest portion at the position of ½ of the maximum value of the loss factor in the crest portion temperature range; W0.1 (° C.) represents, regarding the crest portion, the width of the crest portion at the position of 0.1 of the maximum value of the loss factor; and DeltaW (° C.), the difference between the widths of the two crest portions, is set to be DeltaW=W0.1-W1 / 2, the DeltaW is in the range of from 16° C. to 31° C.

In accordance with the present invention, structural and other composite materials have been developed which have superior performance properties, including high compressive strength, high tensile strength, high shear strength, and high strength-to-weight ratio, and methods for preparing same. Invention materials have the added benefits of ease of manufacture, and are inexpensive to manufacture. The superior performance properties of invention materials render such materials suitable for a wide variety of end uses. For example, a variety of substances can be applied to invention materials without melting, dissolving or degrading the basic structure thereof. This facilitates bonding invention materials to virtually any surface or substrate. Moreover, the bond between invention materials and a variety of substrates is exceptionally strong, rendering the resulting bonded article suitable for use in a variety of demanding applications. Invention materials can be manufactured in a wide variety of sizes, shapes, densities, in multiple layers, and the like; and the performance properties thereof can be evaluated in a variety of ways.

A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.

Provided is an emission treatment system and method for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The emission treatment system has an oxidation catalyst upstream of a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia. Also provided is a method for disposing an SCR catalyst composition on a wall flow monolith that provides adequate catalyst loading, but does not result in unsuitable back pressures in the exhaust.

The devices and methods described herein relate to improved structures for removing obstructions from body lumens. Such devices have applicability in through-out the body, including clearing of blockages within the vasculature, by addressing the frictional resistance on the obstruction prior to attempting to translate and / or mobilize the obstruction within the body lumen

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Provided is an emission treatment system and method for simultaneously remediating the nitrogen oxides (NOx), particulate matter, and gaseous hydrocarbons present in diesel engine exhaust streams. The emission treatment system has an oxidation catalyst upstream of a soot filter coated with a material effective in the Selective Catalytic Reduction (SCR) of NOx by a reductant, e.g., ammonia. Also provided is a method for disposing an SCR catalyst composition on a wall flow monolith that provides adequate catalyst loading, but does not result in unsuitable back pressures in the exhaust.

A method for forming a magnetic tunneling junction (MJT) is provided. In some embodiments, the method may include patterning one or more magnetic layers to form an upper portion of a MTJ. The method may further include patterning one or more additional layers to form a lower portion of the MTJ. In some cases, the lower portion may include a tunneling layer of the MTJ having a width greater than the upper portion. In addition, in some embodiments the method may further include patterning an electrode below the lower portion. In some cases, the electrode may include a lowermost layer with a thickness equal to or less than approximately 100 angstroms. In addition or alternatively, the electrode may have a width greater than the width of the tunneling layer. In yet other embodiments, the method may include forming spacers along the sidewalls of the upper and / or lower portions.

A resecting device is disclosed. The resecting device comprises: a handle having a jaw trigger slidably engaged with the handle and mechanically engaged with a spring mechanism communicating a biasing force to the jaw trigger; a fixed shaft portion having a first and a second end, wherein the fixed shaft portion first end is affixed to the housing, wherein the fixed shaft portion second end forms a first jaw member, and wherein the first jaw member has a tissue contact area; and a slidable shaft portion in communication with the spring mechanism and slidable relative to the fixed shaft portion.

An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors.

A catheter includes a cryoablation tip with an electrically-driven ablation assembly for heating tissue. The cryoablation tip may be implemented with a cooling chamber through which a controllably injected coolant circulates to lower the tip temperature, and having an RF electrode at its distal end. The RF electrode may be operated to warm cryogenically-cooled tissue, or the coolant may be controlled to conductively cool the tissue in coordination with an RF treatment regimen, allowing greater versatility of operation and enhancing the lesion size, speed or placement of multi-lesion treatment or single lesion re-treatment cycles. In one embodiment a microwave energy source operates at a frequency to extend beyond the thermal conduction depth, or to penetrate the cryogenic ice ball and be absorbed in tissue beyond an ice boundary, thus extending the depth and / or width of a single treatment locus. In another embodiment, the cooling and the application of RF energy are both controlled to position the ablation region away from the surface contacted by the electrode, for example to leave surface tissue unharmed while ablating at depth or to provide an ablation band of greater uniformity with increasing depth. The driver or RF energy source may supply microwave energy at a frequency effective to penetrate the ice ball which develops on a cryocatheter, and different frequencies may be selected for preferential absorption in a layer of defined thickness at depth in the nearby tissue. The catheter may operate between 70 and minus 70 degrees Celsius for different tissue applications, such as angioplasty, cardiac ablation and tissue remodeling, and may preset the temperature of the tip or adjacent tissue, and otherwise overlay or delay the two different profiles to tailor the shape or position where ablation occurs or to speed up a treatment cycle.