158 results about "Autoxidation" patented technology

A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

Various methods of fabricating a silicide structure are provided. In one aspect, a method of fabricating a circuit structure on a silicon surface is provided that includes exposing the silicon surface to a plasma ambient containing hydrogen and an inert gas, and depositing a metallic material capable of forming silicide on the silicon surface. The metallic material is heated to form a metal silicide on the silicon surface. The method provides for low sheet resistance silicide structures by eliminating native oxide films without the risk of spacer material backsputtering.

The invention provides a super-hydrophobic textile prepared from a modified polyester fiber based on dopamine and a preparation method thereof, the preparation method comprises the steps that a polyester fabric is soaked into different buffer solutions in sequence, nano-particles produced by dopamine polymerization are deposited on the fiber surface adhered with polydopamine, the fiber is finally treated by a low surface energy modifier to obtain the super-hydrophobic textile; the buffer solution at east comprises two kinds of different buffer solutions, namely, a phosphate buffer solution of the dopamine and a trihydroxymethyl aminomethane buffer solution of the dopamine. According to the super-hydrophobic textile prepared from the modified polyester fiber based on the dopamine and the preparation method thereof, the characteristic that the sizes of polydopamine nano particles produced by dopamine polymerization in different buffer solution systems is utilized, autoxidation polymerization of dopamine is utilized to be adhered to and deposited on the fiber surface to form a rough structure required by the super-hydrophobic surface, and the super-hydrophobic surface can be prepared after the rough structure is treated by the low surface energy; the reaction process is simple, the condition is mild; and the water drop contact angle of the super-hydrophobic surface prepared by the invention is more than 150 degree.

A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH₃ gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH₃ gas.

The invention provides a biodegradable flame resistance material. The flame resistance material is characterized in that starch and chitosan are used as main components, red phosphorus is used as flame resistance additive, starch/chitosan can provides a great deal of carbon, chitosan contains nitrogen element, when acid source is added in red phosphorus, the flame resistance of the biodegradable material is effectively improved and the usable range of the biodegradable composite material is expanded so that the biodegradable composite material has wider application area; the preparation methodadopts solution method, ultrasonic dispersion and mechanical high-speed agitation so that red phosphorus used as fire retardant can be dispersed in solution on nano-scale and the autoxidation of thecomposite material can be effectively avoided, thus the composite material can have better mechanical performance.

The invention discloses a preparation method of an adsorbent for olefin/alkane mixed gas separation. the preparation method comprises the following steps: after vanadium chloride, terephthalic acid, hydrofluoric acid and water are mixed, a hydrothermal reaction is carried out to obtain MIL-47(V<3+>) containing impurities; under the assistance of ultrasonic wave, low temperature activation treatment is carried out to remove impurities so as to obtain MIL-47(V<3+>); and by a solution impregnation method, Cu<2+> is loaded on MIL-47(V<3+>), and autoxidation-reduction is carried out to reduce the loaded Cu<2+> to Cu<+> so as to obtain the adsorbent. By using MIL-47(V<3+>) obtained by low temperature activation treatment as a carrier, Cu<2+> is firstly loaded, and then the loaded Cu<2+> is reduced to Cu<+> by the process of autoxidation-reduction. The preparation process is simple, and conditions are mild. The prepared adsorbent can be used to realize high-selective separation of olefin/alkane mixed gases.

The present invention provides a dense-coverage, adherent phosphorous-based coating on the native oxide surface of a material. Disclosed phosphorous-based coatings include phosphate and organo-phosphonate coatings. The present invention also provides further derivatization of the phosphorous-based coatings to yield dense surface coverage of chemically reactive coatings and osteoblast adhesion-promoting and proliferation-promoting coatings on the native oxide surface of a titanium material.

The present invention provides a dense-coverage, adherent phosphorous-based coating on the native oxide surface of a material. Disclosed phosphorous-based coatings include phosphate and organo-phosphonate coatings. The present invention also provides further derivatization of the phosphorous-based coatings to yield dense surface coverage of chemically reactive coatings and osteoblast adhesion-promoting and proliferation-promoting coatings on the native oxide surface of a titanium material.

Process for forming a coated article by (a) depositing a layer of an omega functionalized organophosphorous compound on an oxide substrate; (b) heating the substrate of step (a) to a temperature sufficient to bond the omega functionalized organophosphorous compound to the oxide substrate; (c) depositing a separate layer onto the layer produced by step (b); and (d) bonding the layers produced by steps (b) and (c) through the omega functional group.

The invention provides an attapulgite-loaded zero-valent iron repair material. The attapulgite-loaded zero-valent iron repair material uses attapulgite as a carrier; zero-valent iron is of monodisperse spherical or ellipsoidal morphology; and the average particle size of the zero-valent iron is in a range of 50 to 150 nm. A preparation method for the attapulgite-loaded zero-valent iron repair material comprises the following steps: (1) successively adding a ferric salt or/and a ferrous salt and attapulgite into oxygen-free anoxic water and carrying out stirring under the protection of inert gas so as to obtain mixed liquid; and (2) adding a reducing agent into the mixed liquid and carrying out stirring and solid-liquid separation so as to obtain a solid, i.e., attapulgite-loaded zero-valent iron. The attapulgite-loaded zero-valent iron prepared in the invention can make full use of interlayer and surface space of attapulgite, has better dispersibility and stability and more uniform particle size distribution, is not prone to particle agglomeration and autoxidation and presents better suspensibility and stability in an aqueous solution; and when applied to pollutants, the attapulgite-loaded zero-valent iron has longer reaction time and better adsorption capability.

The invention provides a pretreatment method for SiGe selective epitaxial growth. The method comprises the following steps that: hydrogen plasma is introduced into a device in a reaction cavity; chemical reaction is carried out on a native oxide on the device and the hydrogen plasma and then steam is generated and is volatilized; and SiGe selective epitaxial growth is carried out on source/drain regions of the device. According to the above-mentioned technical scheme, etching on a side wall by the plasma during the pretreatment process can be avoided, so that the quality of SiGe film growth can be improved.

Conventional gas-phase catalytic oxidation reaction apparatus comprising two reactors for production of acrylic acid is subject to problems of high equipment costs for the reactors and piping, necessity for wide installation area and easy accumulation of carbides generated by autoxidation of acrolein. On the other hand, conventional reaction apparatus comprising a single reactor has the drawbacks that the composition of gas in the first stage reaction and in the second stage reaction cannot be optimized independently of each other, and that the allowable concentration of starting propylene is limited because of the risk of explosion. As a reaction apparatus to solve these problems, this invention provides a fixed bed shell-and-tube reaction apparatus comprising a single reactor, characterized in that the inside of the reactor is divided into two reaction zones of the first reaction zone and the second reaction zone, and that a space equipped with a mechanism for introducing a gaseous substance from outside is provided between the two reaction zones.

The invention discloses a surface passivation method for a germanium-based MOS device substrate, which belongs to the field of semiconductor material devices. The method comprises the steps of: firstly, washing a semiconductor germanium substrate which is used as a substrate for removing organic, inorganic and metallic granular contaminations on a surface and removing an autoxidation layer on thesurface of the substrate; performing plasma treatment on the substrate through use of silicon fluoride or silicone and fluorin containing hydrogen compound for depositing a silicon passivation layer on the substrate; and finally, after depositing a layer of high-k gate dielectric material, and annealing. The surface passivation method disclosed by the invention has the advantages of greatly reducing the density of an interface state between interfaces of the germanium substrate and the gate dielectric material, effectively restraining the diffusion of the germanium in the substrate into the gate dielectric material, and obviously enhancing the passivation efficiency.

Abstract Provided is an oil/fat composition comprising 60 to 100 wt. % of a diglyceride wherein the diglyceride has, as the fatty acid constituent thereof, 15 to 90 wt. % of an ω 3-unsaturated fatty acid having less than 20 carbon atoms and a cis ω 3-unsaturated fatty acid/(cis ω 6-unsaturated fatty acid+saturated fatty acid+trans unsaturated fatty acid) at a weight ratio of 1 to 6. The composition is excellent in visceral fat burning property, body fat burning property and stability against autoxidation.

The invention provides a method for pre-cleaning oxide on the surface of a thin film before sedimentation. The pre-cleaning method adopts a dry-method chemical pre-cleaning process which mainly comprises the following steps: A, a remote plasma etching step: etching gas comprises nitrogen fluoride and ammonia gas; the nitrogen fluoride and ammonia gas are converted into fluoride through plasma with low power; and the fluoride reacts with the oxide on the surface of the thin film to generate silicate; and B, an in-situ annealing step: the silicate obtained in the step A is heated and sublimed to a gaseous state; and the gaseous silicate is pumped out. The disclosed method for pre-cleaning the oxide on the surface of the thin film before sedimentation adopts the dry-method chemical pre-cleaning process, can effectively clean the natural oxide of the bottom of a contact layer, can not degrade the performance of a device on the bottom layer and can simultaneously reduce the contact resistance.

A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF3 while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.

The invention discloses an Si-substrate medium/long wave laminated bicolor HgCdTe material and a preparation method thereof. The method comprises the steps of cleaning an epitaxial-level Si substrate, removing an autoxidation layer of the Si substrate, forming an artificial oxidation layer, removing the oxidation layer of the Si substrate, conducting As passivation, allowing a ZnTe buffer layer to grow through transfer enhancement MME (melanin metabolic enzyme), allowing a CdTe buffer layer to grow, and allowing three HgCdTe thin layers with different components and thicknesses to grow.

The invention relates to a method for recovering and utilizing waste metal sludge. It is characterized in that the waste metal sludge can be recycled as renewable resources, which causes no pollution and avoids the harm for water resource and human environment brought from industrial solid waste deep bury. The method comprises adding hydrogen peroxide and potassium permanganate into waste metal sludge for oxidation, which combines with autoxidation to form metal powder that is suitable for extraction.