The invention discloses an
electroplating-
chemical plating integrated process for an ultra-thin
wafer. The process comprises the following steps: bonding an ultra-thin
wafer of a glass carrier plate or an ultra-thin
wafer with a gentle slope-shaped edge, jointing the ultra-thin wafer with a power supply contact point of an
electroplating bath, starting an
electroplating process, fixing the ultra-thin wafer into a rotary spraying cavity by an annular clamp after electroplating is finished, removing a
photoresist, conducting a pretreatment process of seed layer
etching and
chemical plating, allowing the annular clamp to continue to fix the ultrathin wafer, enabling the clamped ultrathin wafer to enter a
chemical plating tank, carrying out various metallization plating processes separately, cleaning and
drying the annular clamp and the ultrathin wafer, and separating the annular clamp from the ultrathin wafer. According to the electroplating-chemical plating integrated process for the ultrathin wafer, horizontal / vertical matching, rotating and soaking matching of
process equipment can be achieved to achieve optimal
process efficiency, the ultrathin wafer is continuously conveyed and positioned in different types of reaction tanks to complete each process, and natural oxidation or
pollution during intervals is avoided.