9931 results about "Protection layer" patented technology

The invention provides a 2.5 D substrate manufacturing method and a packaging structure. The 2.5 D substrate manufacturing method comprises the following steps: providing a first carrier on which a metal part and an intermediate layer are mounted; a metal column is arranged in the intermediate layer; forming a protective layer covering the metal component and the interposer on the first carrier; a first recess is formed on the metal feature. The interposer and the protective layer are ground such that the interposer and protective layer surfaces are lower than the surface of the metal feature. Forming a first dielectric layer with a first opening on the surfaces of the intermediate layer and the protective layer; the first opening exposes the metal column. Forming a seed layer in the first opening; the seed layer extends to the surface of the metal part and fills the first groove. A wiring layer is formed on the seed layer. The bonding force of the seed layer and the first dielectric layer can be improved, the corrosion to the side wall of the interposer in the etching process is prevented, and the packaging quality and precision are improved.

The invention discloses a primary and secondary fusion pole-mounted intelligent circuit breaker. The primary and secondary fusion pole-mounted intelligent circuit breaker comprises a fault detection module, a protection action module, a reclosing module and an information reporting module, the fault detection module collects multi-dimensional electrical quantity through a current transformer and a voltage transformer, and judges a fault and identifies the type in combination with a dynamic normal range and a duration threshold. The protection action module calculates the fault distance based on the correction impedance, judges whether to act or not by combining the current flow direction and the protection range, and selects a protection level according to the fault severity; the reclosing module dynamically sets an observation time window, distinguishes instantaneous or permanent faults through a retest verification mechanism, and adaptively adjusts a reclosing strategy; and the information reporting module uploads fault related information. According to the method, the problems of high misjudgment rate, poor protection selectivity, rigid reclosing logic and the like of a traditional circuit breaker are solved, and the accuracy, quickness and self-healing capability of power distribution network fault processing are remarkably improved.

Highly flame-retardant, heat-insulating and environmentally friendly cable with a copper core, wherein an insulating sheath (2) is permanently provided on the outside of the copper core (1), and a protective layer (3) is permanently provided on the outside of the insulating sheath (2), wherein four cavities (4) are arranged in the protective layer (3) in a uniform circular arrangement, wherein each of the four cavities (4) is filled with a flame retardant consisting of magnesium hydroxide powder, wherein a reinforcing layer (5) is permanently provided on the outside of the protective layer (3), and a hardening layer (6) is permanently provided on the outside of the reinforcing layer (5), wherein a thermal insulation layer (7) is permanently provided on the outside of the hardening layer (6), and wherein four protective units are provided on the outside of the copper core (1) in a uniform circular arrangement.

The invention discloses a semiconductor device and a preparation method thereof. The preparation method of the semiconductor device comprises the steps that a substrate is provided, a stacking layer formed by alternately arranging a plurality of first sacrificial layers and a plurality of second sacrificial layers is formed on the substrate, and the second sacrificial layers and the substrate are made of the same material; forming a vertical opening penetrating through the stack layer, extending into the substrate, and forming a cavity in the substrate; forming a protective layer in the concave cavity of the substrate; taking the protection layer as an etching stop layer, and transversely etching a part of the second sacrificial layer in the stack layer along the vertical opening to form a plurality of side cavities which are arranged at intervals in the vertical direction; forming a plurality of lower electrodes on the surface of the second sacrificial layer exposed by the plurality of side cavities; forming a capacitor dielectric layer on the surfaces of the plurality of lower electrodes, wherein the capacitor dielectric layer is also located in the vertical opening and is in contact with the protection layer; an upper electrode is formed on the surface of the capacitor dielectric layer, and the multiple lower electrodes, the capacitor dielectric layer and the upper electrode form a capacitor structure. The embodiment of the invention can improve the performance of the device.

The embodiment of the invention discloses an embedded substrate, a power supply device and electronic equipment. The embedded substrate comprises a front surface first adding layer jointed with the first surface of the core part maintaining body, a conduction structure electrically connected with a circuit layer of the dielectric layer is arranged in the dielectric layer of the front surface first adding layer, and the conduction structure comprises a first conduction structure electrically connected with a bonding pad on the chip; the dielectric layer of the first additional layer on the front side is made of an exposable and developable material, an open pore for constructing the conduction structure is formed through exposure and development, the open window of the outer protection layer has a first projection on the first surface, the first open pore for constructing the first conduction structure has a second projection on the first surface, and the second projection covers the first projection. Through the arrangement, the first conduction structure with a larger through-flow cross section is constructed and formed by utilizing the windowing size of the chip side, so that the through-flow capability is effectively improved, and the heat conduction capability is high. In addition, the bonding stress between the circuit layer and the front surface of the chip can be reduced, the layering risk is reduced, and the reliability is better.

The invention discloses an explosive environment airtight medium-voltage power transmission cable, and relates to the technical field of power cables, the explosive environment airtight medium-voltage power transmission cable comprises a central conductor, the outer side of the central conductor is tightly coated with an internal conductor insulator, and the outer side of the internal conductor insulator is tightly coated with an insulated conductor shield; the outer sides of the multiple insulated conductor shields are jointly coated with a steel tape armoring, the outer side of the steel tape armoring is tightly coated with a PVC protection sleeve, and the outer side of the PVC protection sleeve is provided with an external telescopic expansion protection mechanism. A fireproof barrier is constructed on the outer side of the cable through the flame-retardant metal thin net, it is ensured that combustible gas outside the cable cannot be ignited even if open fire appears in the cable, the overall fireproof and explosion-proof performance of the cable is further effectively improved, and meanwhile the outer diameter of a fault position is actively increased, so that the service life of the cable is prolonged. A high-voltage breakdown protection layer in the cable is prevented from igniting external combustible gas, and the overall protection performance of the cable is improved.

The invention discloses an anti-fracture low-voltage power cable, and relates to the technical field of low-voltage cables, the anti-fracture low-voltage power cable comprises three core bodies, the surfaces of the three core bodies are all sleeved with shielding layers, the surfaces of the shielding layers are wrapped with insulating layers, the outer sides of the three core bodies are sleeved with an inner protection layer, the surface of the inner protection layer is sleeved with a thermal insulation layer, and the thermal insulation layer is wrapped with an outer protection layer. The outer side of the thermal insulation layer is sleeved with an outer protection layer, the surface of the outer protection layer is provided with a sliding protection mechanism, and the inner side of the outer protection layer is provided with a reinforcing anti-breaking mechanism in an embedded manner. And when the cable slides, the outer protection layer is not rubbed with the ground, so that the outer protection layer of the cable is prevented from being rubbed and scraped to influence subsequent normal use, the cable is protected to a certain degree, and impurities such as dust and soil adhered to the surface of the cable in the cable transportation and laying process can be scraped.

The invention provides a light-emitting diode chip and a preparation method thereof, and the light-emitting diode chip comprises a conductive silicon wafer, a metal bonding layer, an N-type conductive metal layer, a first insulation protection layer, a P-type conductive metal layer, a P-type reflection metal layer, a current blocking layer, a current expansion layer, and an epitaxial layer which are stacked from bottom to top. The projection of the edge of the P-type conductive metal layer on the current expansion layer is located in the projection of the isolation groove on the current expansion layer, and the ratio of the distance between the projection of the edge of the P-type conductive metal layer on the current expansion layer and the projection of the edge of the isolation groove on the current expansion layer to the width of the isolation groove is 1 / 3-2 / 3. The isolation groove and the cutting wall are arranged on the current expansion layer, and the distance proportion relation between the edge of the P-type conductive metal layer and the isolation groove is favorable for controlling the distribution of current in the light-emitting diode chip, so that the current is prevented from being excessively concentrated, the current is more uniformly expanded to the epitaxial layer, and the overall light-emitting efficiency and stability of the light-emitting diode chip are improved.

The invention discloses an automatic transverse and longitudinal splitting device and method for a flexible assembly battery piece. The automatic transverse and longitudinal splitting device comprises a rack, a conveying mechanism, a first splitting mechanism and a second splitting mechanism, and the battery pieces are sequentially conveyed to pass through the first splitting mechanism and the second splitting mechanism through the conveying mechanism; the protection layer and the silicon wafer are fractured along the scratches from the first direction through a first wafer splitting mechanism, so that the battery piece is split into a plurality of pieces which are connected through adhesive glue; and then the protective layer and the silicon wafer are broken along the scratches from a second direction through a second wafer breaking mechanism, so that the plurality of battery pieces are split into a plurality of small battery pieces which are connected with one another through adhesive glue. According to the invention, the protective layer and the silicon wafer in the three-layer structure of the battery piece can be cracked without cracking the adhesive, so that the cracked battery piece can be kept in an adhesion state, and conditions are provided for subsequent cracking, shaping and distance-expanding film coating production. According to the invention, the automation degree is high, and the productivity and the product quality can be effectively improved.

According to the floor support plate, the continuously-bent bottom of a web bar in a combined frame is not transversely bent, manufacturing is easy, material consumption is low, connection with a bottom plate is more stable, force is directly transmitted between the combined frame and a metal bottom plate, the combined frame and the metal bottom plate are jointly stressed, the material properties of the combined frame and the metal bottom plate are brought into play, and the rigidity of the whole structure is higher. The upper chord is of a steel pipe or profile steel or other metal rod piece structures, the strength of the structure can be improved, the steel consumption can be reduced, economical efficiency is better, and the strength, rigidity and overall bearing capacity are higher. Side ribs can be arranged on the side faces of the web ribs according to engineering requirements and act together with the bottom plate. The structural construction requirement of the steel bars in the floor support plate can be met, and the steel bars can not only be combined with metal bottom plates, but also be used for the floor support plate with the requirement of a protective layer. Compared with a traditional truss floor support plate, the steel consumption can be reduced by 8-15%, and the rigidity can be improved by about 10%.

The invention discloses an anti-interference flame-retardant cable, which relates to the technical field of power cables, and is characterized by comprising an outer protection layer consisting of a rubber outer sheath, a metal armor and a protection mechanism, an inner protection layer consisting of a wrapping tape, a fireproof layer and a waterproof insulating layer, and a plurality of groups of guide cores wrapped in the waterproof insulating layer, the rubber outer sheath, the metal armoring and protection mechanism, the wrapping tape, the fireproof layer and the waterproof insulating layer are arranged in sequence from outside to inside, the overall layer of the cable is effectively divided through the protection mechanism formed by a plurality of annular assemblies, and the metal annular seats of the annular assemblies are arranged in the fireproof layer. The annular assemblies can resist the pressure directly generated by the outside of the cable, when torsion is generated outside the cable, the annular seats buffer the external torsion through the springs among the annular seats, the influence on the inner protection layer is reduced to a large extent, in addition, when the cable is connected, the position of the inner protection layer can be finely adjusted through the rotating structures of the annular assemblies, and therefore the stability of the cable is improved. And the connection of the cable is accurate.

The invention relates to the technical field of waterproof construction, and discloses a roof waterproof structure and a construction method thereof.The roof waterproof structure comprises a roof, and a slope making layer, a waterproof coating layer, a waterproof roll layer, a heat preservation layer and a protection layer are sequentially and upwards arranged from the roof; a vent pipe with one end penetrating and extending to the outer side of the protective layer is arranged in the roof. By arranging the vent pipe, the vent pipe and the surrounding structure design of the vent pipe comprehensively consider multiple aspects such as waterproofness, air permeability and durability, the design measures not only improve the waterproof effect of the roof, but also enhance the adaptability and durability of the structure, powerful guarantee is provided for long-term stable operation of the roof, and the service life of the roof is prolonged. The problem of leakage at the joint of the pipe root of the vent pipe in traditional waterproof construction after long-term use is effectively solved.

The invention discloses a rigid-flex circuit board slotting process based on a laser depth control technology. The rigid-flex circuit board slotting process comprises the steps that the surface of a rigid layer of a rigid-flex circuit board is pretreated, and a laser sensitive layer is sprayed; cNC depth-controlled milling is adopted to form a grooved rough blank structure on the surface of the pretreated rigid layer; positioning laser is used for scanning, a three-dimensional model is established through collected reflected signals, then layered depth-controlled ablation is conducted, second-power laser is sequentially adopted for fine cutting, third-power laser is sequentially adopted for depth calibration, and a groove body structure is formed; cleaning an interface, scanning a groove bottom area and synchronously introducing low-temperature gas; performing morphology repairing treatment, and generating a periodic micro-nano structure on the groove wall by adopting short pulse laser to form a stress concentration resistant surface; depositing an insulating medium layer, and forming a continuous packaging protection layer on the groove wall and the bottom through a vacuum coating process; the high-precision depth-controlled slotting of the rigid-flex circuit board is realized, and meanwhile, the ultra-low thermal damage and anti-fatigue structure and long-acting environmental stability are realized.

The utility model discloses a pressure-resistant cross-linked polyethylene power cable which comprises an outer sheath, an armor layer, an oxygen isolation inner protection layer and a flame-retardant wrapping tape layer which are sequentially arranged from outside to inside, and a pressure-resistant cable core, a plurality of power cable cores and a plurality of interval units are arranged in the flame-retardant wrapping tape layer. According to the power cable, the oxygen isolation inner protection layer effectively prevents oxygen permeation and delays aging of the cable, and the flame-retardant belting layer improves the fireproof performance of the cable. The multiple surrounding plate bodies surround the pressure-resistant cable core, and the spacing plate bodies play a role in separating and fixing the power cable core, so that the pressure-resistant capability of the cable is improved, and the overall structure of the cable is more compact and stable. In addition, the insulating layer is made of the cross-linked polyethylene material, so that the cable has good insulating performance, short circuit can be effectively prevented, the safety and reliability of the cable are improved, and power transmission is stable and efficient.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a substrate with a first surface and a second surface which are opposite to each other; at least performing doping treatment on the first surface to form a doped layer with a first doped element; performing first laser processing on a part of the doping layer to form an activation part, wherein the residual doping layer is a doping part; performing first etching treatment on the first surface by taking the residual doped layer as a dead layer so as to remove the activated part and form a first suede surface; forming a doped polycrystalline silicon layer with a second doping element and a silica glass layer at least on one side, far away from the doping part, of the substrate; performing second laser treatment on at least part of the silica glass layer to form a loose part; taking the residual silica glass layer as a protective layer, at least carrying out second etching treatment on the second surface to remove the loose part and the doped polycrystalline silicon layer opposite to the loose part, and forming a second textured surface; the laser types adopted by the first laser treatment and the second laser treatment are different, so that the manufacturing process is at least simplified.

The invention discloses a flexible circuit board made of weldable low-temperature silver paste and a preparation process of the flexible circuit board, and relates to the technical field of flexible electronic device manufacturing, and the flexible circuit board comprises a base material layer, a low-temperature weldable silver paste conductive layer and a protective layer. According to the invention, the collaborative design of the weldable low-temperature silver paste and the self-repairing protection layer is integrated, the efficient preparation of the flexible circuit board is realized through the printing technology, the weldable low-temperature silver paste breaks through the traditional high-temperature limitation, supports a wide range of substrates and can be directly welded without surface treatment, and in addition, the polyurethane protection layer containing the dynamic disulfide bond has a self-repairing function. Compared with a traditional FPC, only two core processes of printing and baking are needed, the process is greatly simplified, the equipment investment is reduced, and double reduction of the manufacturing cost and the material cost is achieved.

An adaptive modular multimodal communication and computing panel includes a multilayer stack with a protective layer transmissive in selected bands, a reconfigurable communication layer operable in phased array, reflectarray, hybrid phased reflector, free space optical, or quantum modes, and electronics with heterogeneous processors. A multi scale interconnect and input and output fabric couples electrical, radio frequency, guided optical, and free space optical domains through interfaces including electro optic transduction and RF or baseband conversion. The fabric may implement programmable true time delay, resonators, and comb referenced timing. A management system coordinates beamforming, sensing, routing, calibration, workload placement, and security. Panels tessellate and connect by electrical, radio frequency, and fiber optic interfaces, supporting hot swappable modules, blind mate connectors, robotic servicing, and anti tamper features. Power and thermal subsystems harvest, store, regulate, and dissipate energy. The architecture scales from chip level modules to vehicle, airborne, maritime, orbital, and deployable systems.

A manufacturing method of a semiconductor structure and the semiconductor structure, the manufacturing method of the semiconductor structure comprising: providing a substrate comprising a first region and a second region; forming a laminated structure formed by alternately stacking a plurality of first material layers and a plurality of second material layers on the first region; first etching is executed, a groove is formed in one end of the laminated structure, and the second area is exposed out of the bottom of the groove; executing second etching, removing part of the plurality of second material layers through the grooves and keeping the plurality of first material layers arranged at intervals; wherein before the second etching is executed, a protection layer is formed on the surface of the second area, and the protection layer at least extends towards the surface of the first area. According to the method, the semiconductor device with relatively high reliability can be obtained.

The invention discloses a solar cell and a photovoltaic module. The solar cell comprises a silicon substrate; the silicon substrate is provided with a light receiving surface and a backlight surface which are opposite, and a side surface arranged between the light receiving surface and the backlight surface; a protective layer is arranged on the side surface and comprises a first conductive layer, an insulating layer and a second conductive layer which are sequentially arranged on the side surface; the first conductive layer and the second conductive layer are opposite in conductivity type. The first conductive layer and the second conductive layer are insulated and isolated by using the insulating layer, so that the conductive layer formed on the side surface of the silicon substrate through winding plating does not need to be specially removed in the preparation process of the battery, and the production process of the battery is simplified. Moreover, shielding protection is formed on the side surface of the silicon substrate by using the protective layer, so that the risks of damage and electric leakage caused by direct exposure of the side surface of the silicon substrate can be avoided, carrier recombination on the side surface of the silicon substrate can be reduced, and the conversion efficiency of the battery is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention discloses an INS film with excellent comprehensive performance, which comprises a surface protection layer, an upper base material layer, a printing ink layer, a bonding glue layer and a lower base material layer which are sequentially superposed from top to bottom, the surface protection layer is prepared from the following raw materials in parts by weight: 75-135 parts of polyester polyol resin, 30-60 parts of hydroxy acrylic resin, 2-25 parts of an isocyanate curing agent, 2-17 parts of a closed curing agent, 2-25 parts of a chain extender, 0.5-8 parts of a catalyst, 0.5-2 parts of an antioxidant and 0.5-3 parts of an ultraviolet light absorber. According to the surface protection layer of the INS film, the high-temperature condition of a high-temperature plastic uptake procedure of the INS film in preparation of INS parts is well utilized, so that the closed curing agent is effectively excited to perform secondary cross-linking curing reaction. The INS film is good in surface chemical reagent resistance, has the characteristics of high heat stretch rate, high hardness and scratch resistance, has excellent ultraviolet irradiation yellowing resistance, and is particularly suitable for the field of in-mold decoration.

The invention discloses a multilayer three-dimensional stacked circuit board and a preparation method thereof, and the method specifically comprises the steps: obtaining a substrate with a single conductive surface, and carrying out the spraying of a stress buffer layer on the conductive surface of the substrate; covering a layer of insulating material on the stress buffer layer, and forming a pattern insulating layer through photoetching; performing pulse electroplating processing on the exposed pattern of the pattern insulating layer to obtain a first circuit board; silk-screening a flexible connection layer on the pattern bonding pad layer of the first circuit board, and carrying out three-dimensional stacking processing on the flexible connection layer to obtain a second circuit board; and assembling a circuit protection layer on the second circuit board, and processing a stress release groove between the second circuit board and the circuit protection layer to obtain the multi-layer three-dimensional stacked circuit board. Through the design of the stress buffer layer and the stress release groove, interlayer stress can be reduced, circuit board breakage or cracking caused by overlarge interlayer stress is avoided, and the technical problem that large interlayer stress is generated in the circuit board preparation process in the prior art is solved.

The invention provides a composite material with excellent heat insulation performance, which relates to the field of fireproof heat insulation structures, and sequentially comprises a fireproof layer, a transition layer, a first protection layer, a first heat insulation layer, a second heat insulation layer and a second protection layer, wherein the fireproof layer adopts an intumescent fireproof coating, the transition layer adopts a primer, the first protection layer and the second protection layer adopt metal titanium foils, the first heat insulation layer adopts an aerogel felt, the second heat insulation layer adopts a phase change material, the phase change material is formed by compounding a phase change raw material and a base material, and the phase change raw material is microcapsules. A packaging material of the microcapsule is a mixture of melamine, formaldehyde and urea, and a phase change inner core of the microcapsule is paraffin; the base material is epoxy resin. The composite material not only has the characteristics of excellent fireproof and heat-insulating performance, thin thickness, light weight, good long-term stability and the like, but also has the advantages of simple structure, convenience in installation, wide application range and the like.

The present invention relates to the technical field of wires and cables, and in particular to a high-temperature and high-voltage cable for an energy storage device and a manufacturing method thereof, comprising: a plurality of wire cores, a flame-retardant filling layer, a sheathing layer, an armor layer and an outer sheath, wherein the wire core comprises a conductor with a circular cross-section, the outer side of the conductor is coated with a protective layer, a gap filling layer is provided between the conductor and the protective layer, and the gap filling layer is formed by filling a plurality of matrices provided with a conductive skin layer and a phase-change heat storage inner layer; the matrix can fill the cuts formed on the outer side of the conductor due to twisting, and the conductive skin layer enables the gap filling layer to conduct electricity, thereby balancing the electric field and avoiding local discharge, and at the same time, through the heat absorption and heat release of the phase-change heat storage inner layer, the heating and cooling rates of the conductor can be slowed down, thereby reducing the influence of high-frequency thermal expansion and contraction on the material, and avoiding the formation of a gap between the conductor and the protective layer due to thermal expansion and contraction.

The invention discloses a 0.6 / 1kV cross-linked polyethylene cable and a preparation method thereof, and relates to the technical field of cross-linked polyethylene cables, the 0.6 / 1kV cross-linked polyethylene cable comprises a wire core, a cross-linked polyethylene bottom layer, a protective outer layer and a composite protective layer, and the composite protective layer is prepared by mixing expanded graphite and a thermal response hard generator; when the thermal response hard generating agent is heated and is at the heating reaction temperature, a solid hard object used for improving the hardness of the composite protection layer is generated, and after the expanded graphite is heated to expand and the thermal response hard generating agent is heated to generate the solid hard object, it can be guaranteed that the composite protection layer has the good hardness, and the service life of the composite protection layer is prolonged. When the composite protective layer is impacted in the heating process, the composite protective layer can still resist impact by using a solid hard object generated by heating, so that the situation that the impact resistance of the composite protective layer is seriously reduced after the expanded graphite is heated and expanded is avoided; therefore, the cross-linked polyethylene bottom layer and the wire cores in the cross-linked polyethylene bottom layer can still be well protected after the composite protection layer is impacted in the heating process.

The invention relates to a composite electromagnetic shielding structure for a power terminal and a preparation method thereof, the structure comprises an accommodating shell, the accommodating shell is formed by connecting a plurality of composite electromagnetic shielding plates, and each composite electromagnetic shielding plate comprises an inner surface shielding layer and an outer surface shielding layer which are attached to each other; a heat conduction layer is arranged between the inner surface shielding layer and the outer surface shielding layer, and the inner surface shielding layer is located in the accommodating shell; a protective layer is arranged on the outer layer of the outer surface shielding layer and comprises an insulating layer and a waterproof layer, and the waterproof layer is located on the outer layer of the insulating layer; the outer surface shielding layer is made of a low-frequency electromagnetic field shielding material formed by mixing amorphous magnetic alloy powder, magnetic fibers and nickel powder; and the inner surface shielding layer is made of a high-frequency electromagnetic shielding material formed by mixing silicon carbide and resin foam rubber fibers. The structure can cope with various electromagnetic interference environments, provides electromagnetic shielding protection, and also has better electromagnetic shielding effectiveness for electromagnetic interference of different frequency bands.

In order to solve the problems of heat conduction, excessive ceramization, influence on the performance of a part which is not subjected to a fire disaster and increase of maintenance cost, an armored protection layer and a separation assembly are arranged at an interval, and the separation assembly is of a continuous broken-line-shaped tubular structure, so that the bending difficulty of the cable can be reduced, and the cable is suitable for being laid in a narrow and small space; the partition assembly comprises a folding cavity, an outer layer shell and an inner layer shell, a V-shaped groove is formed in the downward bending position of the outer layer shell, ceramization powder accounting for two thirds of the volume of the outer layer shell is contained in the V-shaped groove, the powder can enter the folding cavity after a plugging piece in a side circulation hole is heated and melted, and according to the design, ceramization reaction spreading is controlled through a sectional structure, thermal stress concentration is relieved, and the service life of the ceramic is prolonged. The heat insulation effect is enhanced, continuous work of the cable in a fire disaster is guaranteed, the problem of flexibility reduction caused by unnecessary ceramization is avoided, and construction flexibility and fire-resistant reliability are both considered.

The invention provides a network cable with a dehumidification function. The network cable comprises an outer protection layer, a central shaft, a plurality of supports and a plurality of sliding assemblies. The central shaft is rotatably arranged in the accommodating cavity of the outer protective layer; a movable cavity for containing the sliding assembly is formed between any two adjacent supports, the sliding assembly comprises a sliding frame, a wire core and an opening and closing structure, the sliding frame is arranged in the movable cavity in a sliding mode, the sliding frame is provided with a first air hole communicated with the wire cavity, and a first air cavity is formed between the opening and closing structure and the outer protective layer. A second air cavity communicated with the first air hole can be formed between the opening and closing structure and the sliding frame; a supporting cavity is formed between any adjacent support and sliding frame, the support is provided with a second air hole, the second air hole is communicated with the supporting cavity and the second air cavity, and the center shaft can abut against the sliding frame to slide in the radial direction of the center shaft when rotating so that the sliding frame can control on-off of air channels of the first air cavity and the second air cavity.

An embedded substrate, a power supply apparatus, and an electronic device. The embedded substrate comprises a front first additional layer, which is joint with a first surface of a chip holding body, wherein a conduction structure which is electrically connected to a circuit layer of the front first additional layer is provided in a dielectric layer of the front first additional layer, the conduction structure comprising a first conduction structure electrically connected to a pad on a chip; the dielectric layer of the front first additional layer is made of an exposable and developable material, and openings for constructing the conduction structure are formed by means of exposure and development; and a window of an outer protection layer has a first projection on the first surface, a first opening for constructing the first conduction structure has a second projection on the first surface, and the second projection covers the first projection. By means of such arrangements, a first conduction structure having a relatively large through-flow section is constructed by using the size of a window on a chip side, thereby effectively improving a through-flow capability, and achieving a good thermal conductivity capability. In addition, the joining stress between a circuit layer and the front surface of the chip can be reduced, thereby lowering the risk of delamination, and providing relatively good reliability.

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, and a photovoltaic module, the photovoltaic cell comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite, and the first surface is provided with first areas and second areas which are alternately arranged along a first direction; the substrate in the second area is provided with a groove which is recessed towards the interior of the substrate, and the bottom surface forming the groove is a first suede comprising a plurality of first pyramids; and the first protection layer at least covers the surface of the first pyramid. The embodiment of the invention is at least beneficial to maintaining the morphology of the first pyramid so as to improve the light absorption and utilization rate of the second region, thereby improving the photoelectric conversion efficiency of the photovoltaic cell.