The invention provides a high-density three-dimensional vertical structure memory and a preparation method thereof. The preparation method comprises the following steps: forming a word
line structure in a stacking structure on a substrate; filling an insulating medium, and forming a through hole structure in the insulating medium at two sides of the word
line structure; forming a storage medium layer in the through hole structure; and forming a top
electrode layer in the through hole structure. Aiming at the
bottleneck of a laminated hole
etching process, the invention provides a scheme of only performing through hole
processing in a single insulating medium to form a through hole array, and the
etching precision and the yield are optimized by utilizing the material uniformity, so that the
etching difficulty is greatly reduced; the storage density is doubled by optimizing the position of the
bit line circuit and the efficient arrangement of the multiple
layers of storage units; the high-density three-dimensional vertical structure memory provided by the invention is compatible with a plurality of storage media such as resistance change materials and
phase change materials, and has the advantages of high-density integration and manufacturing stability. According to the method, an efficient solution is provided for high-density nonvolatile storage requirements in the fields of
artificial intelligence,
cloud computing and the like.