89 results about "Ultraviolet light emitting diodes" patented technology

According to the deep ultraviolet light-emitting diode provided by the invention, the first sub-layer in the electron blocking layer is made of AlN or AlGaN material with relatively high Al content, has a relatively large band gap, can form a relatively high potential barrier, has a very strong blocking effect on electrons, and reduces electron leakage, so that more electrons can be remained in an active region to participate in compounding with holes, and thus the light-emitting efficiency of the deep ultraviolet light-emitting diode is improved. Therefore, the number of generated photons is increased, and the output power is improved. Meanwhile, by reasonably setting the Al component content difference of the first sub-layer and the second sub-layer, the electric field distribution situation in the electron blocking layer can be adjusted, the injection speed, injection direction and the like of electrons can be optimized through the internal electric field, the electrons can be more evenly and appropriately injected into the quantum well active layer, and the quantum well performance is improved. And better matched injection with holes is formed, so that the recombination probability of electrons and holes is improved, and finally, the output efficiency of the deep ultraviolet light-emitting diode is improved.

The invention discloses a deep ultraviolet light emitting diode, and relates to the technical field of semiconductor illumination. The deep ultraviolet light emitting diode comprises an epitaxial structure and a composite function layer, the epitaxial structure further comprises a first step channel and a second step channel which are of a step structure, and the first step channel is arranged to be sunken downwards from the top face of a p-type injection layer to the top face of an n-type injection layer. The second step channel is arranged on one side, far away from the first step channel, of the n-type electrode layer and is recessed downwards from the top surface of the n-type injection layer to the AlN intrinsic layer, the top surface of the p-type injection layer, the surface of the p-type electrode layer, the first step channel and the second step channel. Each composite functional layer comprises at least two adjacent insulating layers with different refractive indexes, and the distance between the bottom surface of the second step channel and the top surface of the substrate layer is any one of 0-10 [mu] m. The deep ultraviolet light-emitting diode provided by the invention has relatively high light output power and device reliability at the same time.

The present invention provides an agricultural system for cultivating solanaceous plants comprising a plant cultivation area which is deficient in solar UV radiation, wherein said system comprises an UV-LED light source. The present invention further provides method for cultivating solanaceous plants in a controlled plant cultivation environment deficient in solar UV radiation, said method comprises subjecting the plant to supplemental UV radiation emitted by an UV-LED light source. The present invention further provides the use of supplemental UV radiation emitted by an UV-LED light source for reducing intumescence injury of solanaceous plants cultivated in a plant cultivation area which is deficient in solar UV radiation.

The invention discloses a deep ultraviolet light-emitting diode and an optimization method thereof, which are applied to the technical field of deep ultraviolet light-emitting equipment. The method comprises the following steps that a structure optimization device model of the deep ultraviolet light emitting diode is established, a substrate nano array is arranged on the light emitting surface of a transparent substrate of the device, and a p-GaN nano array is arranged on the surface of a p-GaN layer and / or a p-AlGaN layer of the device; parameters of the p-GaN nano array and the substrate nano array are set as to-be-optimized parameters, corresponding to-be-optimized parameter constraint ranges are set according to the to-be-optimized parameters, and a multi-dimensional parameter space is constructed according to the to-be-optimized parameters and the corresponding to-be-optimized parameter constraint ranges; and with maximization of the total light extraction efficiency of the deep ultraviolet light emitting diode model as an optimization target, performing global collaborative optimization in the multi-dimensional parameter space by adopting a global optimization algorithm to obtain the optimal parameter of each to-be-optimized parameter. And the light extraction efficiency of the deep ultraviolet light-emitting diode is effectively improved.

The application discloses a deep ultraviolet light emitting diode with light scattering structure and a preparation method thereof. The light emitting diode comprises, in sequence along a wafer epitaxial growth direction, a substrate layer, a buffer layer and an N-type semiconductor transmission layer; wherein the N-type semiconductor transmission layer has an upper and lower part in shape, a multi-quantum well active layer, a P-type semiconductor transmission layer and a P-GaN contact layer are sequentially arranged on the surface of the upper part of the N-type semiconductor transmission layer; and a horizontal direction light scattering structure layer and a vertical direction light scattering structure are respectively arranged in the inner part of the upper and lower parts of the N-type semiconductor transmission layer. The application improves the scattering effect of light in the N-type semiconductor transmission layer, breaks the light waveguide effect of the N-type semiconductor transmission layer, effectively blocks the light propagation to the metal n electrode, simultaneously scatters the light, improves the bottom light extraction efficiency of the deep ultraviolet LED and improves the light extraction efficiency.

Exemplary devices such as ultraviolet light emitting diodes (UV LEDs) are disclosed which include conductive Be-doped p-type material with greatly improved efficiency over UV LEDs employing other dopants such as Mg. Exemplary processes for producing Be-doped p-type regions in semiconductor devices are also described.

The application discloses a deep ultraviolet light emitting diode epitaxial wafer and a preparation method thereof and a deep ultraviolet LED, and the deep ultraviolet light emitting diode epitaxial wafer comprises a substrate and a buffer layer, an N-type semiconductor layer, a multi-quantum well layer, a P-type semiconductor layer, an electron blocking layer, a P-type transition layer and a P-type contact layer which are sequentially stacked on the substrate; the P-type semiconductor layer comprises an Al x GaN gradient layer, an Al m Ga(In n )N hole injection layer and an Al y GaN gradient layer in sequence on the multi-quantum well layer, wherein x ranges from 0.3 to 1, y ranges from 0.3 to 1, 0.3<=m<=0.8 and n<=0.05. The deep ultraviolet light emitting diode epitaxial wafer provided by the application can improve the hole injection efficiency and quality of the P-type material, enhance the matching degree of the active region electron hole, and thus improve the light emitting efficiency of the ultraviolet light emitting diode.

The present invention relates to a massage device, and more particularly, to a warm massage device provided with a UV LED. According to one aspect of the present invention, a warm massage device provided with a UV LED comprises: a main body part provided with a massage module for performing warm massage on the body of a user and a first support surface for supporting a part of the body of the user; the auxiliary part is provided with a second supporting surface for supporting the rest part of the body of the user, and the auxiliary part is movably arranged, so that when the massage module is used, the first supporting surface and the second supporting surface are arranged in a row in the length direction, and when the massage module is not used, the first supporting surface and the second supporting surface are arranged in a row in the length direction. The second supporting surface is arranged at the upper part of the first supporting surface in the height direction; a sterilization part provided with a UV LED to sterilize at least one of the first support surface and the second support surface; and the control part is used for controlling the actions of the massage module and the sterilization part.

This invention discloses an AlGaN-based deep ultraviolet light-emitting diode injection structure and its application. The injection structure provided by this invention is a periodic structure, and each periodic structure includes the following components: p-Al with a gradually changing Al component proportion. m Ga 1‑m N layers; in each periodic structure, the proportion of Al component m gradually changes linearly from x to y along the growth direction, with x ranging from 0.6 to 0.85 and y ranging from 0.3 to 0.7, and x > y. The injection structure provided by this invention can utilize the negatively polarized body charge induced by the piezoelectric effect to modulate the energy band of the p-type region, reduce the hole injection barrier, and suppress electron leakage. This method integrates the p-type region of the deep ultraviolet light-emitting device into a unified periodic structure, avoiding the use of an electron blocking layer (p-EBL), improving the device carrier injection efficiency while effectively reducing the device operating voltage, which is of great significance for improving the electro-optical conversion efficiency of AlGaN-based DUV-LEDs and promoting their industrial applications.

Techniques for reducing biofouling on optical equip- ment, using minimum power in a marine environment are provided. An example of an apparatus according to the disclosure includes a housing including a cavity and an ultraviolet transparent window disposed over the cavity, an optical device disposed in the cavity and directed towards the ultraviolet transparent window, one or more ultraviolet light emit- ting diodes disposed in the cavity and directed towards the ultraviolet transparent window, and a controller operably coupled to the one or more ultraviolet light emitting diodes and configured to provide at least one lamp power function to the one or more ultraviolet light emitting diodes, wherein the at least one lamp power function is based on at least a flash power value, a flash duration, a rest power value and a rest duration.

To provide a high safety ultraviolet irradiation device or the like.SOLUTION: An ultraviolet irradiation device includes: a housing body which forms a housing space housing a subject to be irradiated with ultraviolet light; an ultraviolet light-emitting diode which emits ultraviolet light toward the subject housed in the housing space; an electric current supply part for supplying an electric current to the ultraviolet light-emitting diode; a lock device which locks a body part and a lid part openably and closably connected to the body part when the housing space is closed by the lid part and the body part, where the lock device has an unlocking operation part which is an operation part that releases the lock, and is formed of a conductor, and an electric current is supplied to the unlocking operation part in emitting light from the ultraviolet light-emitting diode.SELECTED DRAWING: Figure 9

A device configured for disinfecting a desired touchpoint may include a flexible housing, which may be field configurable into two or more different shapes to accommodate the desired touchpoint. The flexible housing may house a plurality of ultraviolet-C (UVC) light-emitting diodes (LEDs), a power source, and a controller which may be operatively coupled to the plurality of UVC LEDs, the power source, and a motion sensor. In response to receiving a motion signal from the motion sensor indicating motion near the desired touchpoint, the controller waits until the motion sensor no longer detects motion and then activates one or more of the plurality of UVC LEDs for a predetermined period of time to disinfect the desired touchpoint.

This invention discloses an ultraviolet light-emitting diode and its fabrication method. The ultraviolet light-emitting diode includes a substrate and an N-type semiconductor layer, an active light-emitting layer, an electron blocking layer, a P-type semiconductor layer, and a P-type contact layer sequentially stacked on the substrate, as well as an N-electrode disposed on the N-type semiconductor layer and a P-electrode disposed on the P-type contact layer; the P-type contact layer includes porous Al atoms sequentially stacked on the P-type semiconductor layer. x Ga (1‑x) The invention provides an ultraviolet light-emitting diode (UVLED) with an N-layer and a P-type GaN layer. While maintaining good P-type ohmic contact, it reduces in-plane total internal reflection and light absorption loss in the P-type material, thus improving the light extraction efficiency of the UVLED.

The application discloses an epitaxial wafer preparation method, an epitaxial wafer and an ultraviolet light emitting diode. The epitaxial wafer preparation method comprises the following steps: providing a substrate; sequentially stacking a buffer layer and an N-type semiconductor layer on the substrate; sequentially and alternately stacking a preset number of quantum well layers and quantum barrier layers to form a multi-quantum well layer on the N-type semiconductor layer; sequentially stacking an electron blocking layer and a P-type semiconductor layer on the last quantum barrier layer; wherein a first quantum barrier sublayer, a second quantum barrier sublayer, an insertion sublayer and a third quantum barrier sublayer are sequentially stacked on the quantum well layer to form the quantum barrier layer; the quantum well layer, the first quantum barrier sublayer, the second quantum barrier sublayer and the third quantum barrier sublayer are all AlGaN layers; the insertion sublayer is an MgN layer; and the Al component content of the first quantum barrier sublayer and the third quantum barrier sublayer is lower than that of the second quantum barrier sublayer. By adopting the application, the problem of low internal quantum efficiency in the epitaxial wafer in the prior art can be solved.

An HVAC UVC light projection unit for providing UVC illumination within an air duct includes at least one UVC light source comprising a UVC LED and a lens configured to receive UVC light from the UVC LED. The UVC light projection unit further comprises a mounting platform for securing to the outside of the duct. An elongate support configured to support the at least one UVC light source connects the mounting platform with the UVC light source via a hole in the wall of the duct such that the UVC light source is inside the duct. The UVC light source is oriented toward the longitudinal direction of the air duct to direct UVC light along the length of the duct.

Provided is an ultraviolet-curable inkjet ink containing a polymerizable compound and a photopolymerization initiator, the polymerizable compound containing a monofunctional (meth) acrylate, the monofunctional (meth) acrylate comprising an amino group-containing monofunctional (meth) acrylate (A), and the photopolymerization initiator comprising an ethoxyphenyl (2, 4, 6, 7, 8, 8, 9, 10, 11, 12, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, 13, the content of the monofunctional (meth) acrylate is 0.1-15% by mass on the basis of the total mass of the ultraviolet-curable inkjet ink, and the content of the monofunctional (meth) acrylate is 0.1-15% by mass on the basis of the total mass of the ultraviolet-curable inkjet ink. An inkjet recording method includes: discharging the ultraviolet curable inkjet ink from an inkjet head onto a recording medium; and curing the ultraviolet curable inkjet ink on the recording medium by irradiating ultraviolet light from an ultraviolet light emitting diode.

Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower surface and an upper surface, the semiconductor stacked layer includes a first semiconductor layer, a light emitting layer and a second semiconductor layer; focusing a first laser beam and a second laser beam into the substrate, a focusing position of the first laser beam is closer to the lower surface than that of the second laser beam, the first laser beam is focused to form at least one first laser cutting line, laser scratches of each first laser cutting line are quasi-circular, and the at least one first laser cutting line includes a laser cutting line closest to the lower surface; and separating the LED wafer to form LED chips.

The application discloses an electrophoretic display device, and relates to the electrophoretic display field, and comprises an electrophoretic display unit, a refractive layer and an ultraviolet light source layer; an ultraviolet light source device area of the ultraviolet light source layer is arranged in opposite corner areas of the electrophoretic display unit, and the ultraviolet light source device area of the ultraviolet light source layer is provided with an ultraviolet light emitting diode; wherein fluorescent electrophoretic particles of the electrophoretic display unit are excited to fluoresce under ultraviolet irradiation; an anode, a UV light emitting layer and a cathode of the ultraviolet light emitting diode are arranged in a slant stack mode; UV light first passes through a transparent electrode, then passes through the refractive layer, and then is refracted to the electrophoretic display unit due to the change of the refractive index from high to low, and then photo luminescence occurs, and finally the light is emitted through a display window area. In addition, the application further discloses a driving method of the electrophoretic display. The application provides the ultraviolet light source for the electrophoretic particles of the electrophoretic display layer by arranging the UV diode light source on the side of the electrophoretic display, excites fluorescence, and effectively improves the brightness of the electrophoretic display layer and the uniformity of light emission.

The utility model relates to a structure of an ultraviolet light emitting diode, which comprises a lamp holder, a plurality of ultraviolet lamp strips, a plurality of light emitting diodes, a lamp shell and at least one anti-disassembly mechanism, the anti-disassembly mechanism comprises a mounting guide groove, a guide inclined plane formed in the mounting guide groove, a non-return wall formed on one side of the guide inclined plane, and a positioning block which enters from the mounting guide groove and is limited by one side of the non-return wall. Therefore, when the lamp holder and the lamp shell are assembled, the positioning block on the lamp shell is placed in from the mounting guide groove of the lamp holder, and then rotates along the mounting guide groove to cross the guide inclined surface, so that the positioning block can be sealed in the mounting guide groove through the non-return wall, and an ultraviolet lamp strip with a light-emitting diode is mounted in the mounting guide groove through the anti-disassembly mechanism. The LED lamp is sealed in the lamp holder and the lamp housing in a non-detachable manner, and has the characteristics of safety, durability and environmental protection.

Provided is an ink curing conveyor including a detachable structure for LED modules to which an ultra-violet light emitting diode (UV-LED) that generates ultraviolet rays having different wavelengths has been applied, an elevation structure of an elevation body for the LED modules, a conveyor including the elevation body, and a controller installed in the conveyor so that the controller is dockable. The wavelengths of UVs that are radiated by the LED modules are different from each other. The detachable structure of the LED module includes a pair of banana plugs and a pair of banana sockets.

A method of exposing a layer of liquid photopolymer resin to actinic radiation from a UV light source to crosslink and cure the layer of liquid photopolymer resin. The liquid photopolymer resin is capable of being selectively crosslinked and cured upon exposure to actinic radiation at a desired wavelength, The exposure unit includes a plurality of UV LED light tubes arranged at a distance from a surface of the layer of liquid photopolymer resin.

To provide a compact virus infection preventing apparatus capable of effectively preventing virus infection, having high treatment capacity for inactivating viruses and good in operability.SOLUTION: In the virus infection prevention device, the air washing section includes a tubular barrel section having a connection port with the air supply hose at one end and an opening at the other end, a first air supply fan and a first ultraviolet light emitting diode provided in this order inward of the connection port, a second air supply fan and a second ultraviolet light emitting diode provided in this order inward of the opening, and a reflecting mirror between the first ultraviolet light emitting diode and the second ultraviolet light emitting diode. The reflecting mirror has a cylindrical body portion, a first inclined portion provided at one end portion of the cylindrical body portion and substantially matching a light distribution angle of ultraviolet rays emitted from the first ultraviolet ray emitting diode, and a second inclined portion provided at the other end portion of the cylindrical body portion and substantially matching a light distribution angle of ultraviolet rays emitted from the second ultraviolet ray emitting diode.SELECTED DRAWING: Figure 2

An ultraviolet sterilization and plant growth system can be mounted to an air duct to sterilize the air and then selectively removed and used in a portable mode to sterilize surfaces or enhance plant growth. The system includes a housing, a heatsink element, an array of ultraviolet light-emitting diodes (LEDs) to generate directional beams of ultraviolet radiation, and an electronic driver to control the LEDs. One or more power interfaces allow for operation in AC mode when connected to a power receptacle or in DC mode when powered by a portable source. In addition to its sterilization capabilities, the system incorporates tunable LEDs and programmable light recipes designed to support plant health and growth. These include specific light frequencies for vegetative growth, flowering, and pest control, making the system a versatile solution for both sterilization and horticultural applications.

An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

To improve the emission efficiency of ultraviolet light emitting diodes in the Far-UVC wavelength range, the ultraviolet light emitting diode 100A in the embodiment of the present disclosure has an AIGaN-based crystal or an InAIGaN-based crystal, and comprises an light emitting layer 134, a spacer layer 136A, an electron blocking layer 138 in this order along the electron flow, wherein the Al composition ratio in the spacer layer varies along the position in the thickness direction of the layers. Simultaneously or optionally, the ultraviolet light emitting diode of the embodiment of the present disclosure is provided with the emitting layer 134 comprising at least one barrier layer 13B and at least two quantum well layers 13W sandwiching the barrier layer, wherein the barrier layer is configured as a thinned layer.

The invention provides an intelligent refrigerator peculiar smell detecting and processing device, and belongs to the technical field of refrigerator production.The intelligent refrigerator peculiar smell detecting and processing device is characterized in that a multi-dimensional data acquisition system comprising a gas sensor array and a temperature and humidity sensor is constructed, and low-frequency trend components of sensor signals are extracted through wavelet transformation; a sparse coding-based dictionary learning and deep expansion network combined temperature drift compensation model is used to realize self-adaptive correction of a sensor baseline, and feature matrix construction and cosine similarity calculation are combined to complete peculiar smell type identification and concentration level quantification. And the power of the ultraviolet light emitting diode and the rotating speed of the fan are dynamically adjusted through a thermodynamic entropy increase minimization purification control algorithm to realize efficient purification, so that the technical problem of insufficient detection accuracy caused by serious baseline drift of the refrigerator odor sensor in a temperature fluctuation environment is solved.

The present invention relates to the field of semiconductor manufacturing technology, and in particular to an ultraviolet light-emitting diode and a manufacturing method thereof, comprising the following steps: 1. providing an LED wafer, the LED wafer comprising a substrate and a semiconductor stack located on an upper surface of the substrate, the semiconductor stack having a lower surface close to a side of the substrate and an opposite upper surface, the semiconductor stack sequentially comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer from the lower surface to the upper surface; 2. providing a laser beam for multiple irradiations focused on the interior of the substrate, the laser beam comprising a first laser beam and a second laser beam, wherein the focusing position of the first laser beam is closer to the lower surface of the semiconductor stack than the focusing position of the second laser beam, the first laser beam being focused on the interior of the substrate to form a first laser cutting line, the laser scratch of the first laser cutting line being quasi-circular, and the first laser cutting line comprising the laser cutting line closest to the lower surface of the semiconductor stack; and 3. separating the LED wafer into a plurality of LED chips.

The utility model relates to the technical field of UVLED (Ultraviolet Light Emitting Diode) lamps, and discloses curing equipment convenient for disassembling UVLED lamps, which comprises a rack, a curing equipment body and an LED lamp body, the curing equipment body is arranged on the rack, a support frame is arranged in the curing equipment body, and the LED lamp body is arranged in the support frame. By using the mechanical structure of the push rod and the control rod, the LED lamp can be fixed and released only by rotating the control rod, so that not only is the working efficiency of maintenance personnel improved, but also the possibility of quickly replacing the LED lamp is provided, the shutdown time of equipment due to maintenance is shortened, the push rod can be moved through a simple rotating action, and the maintenance cost is reduced. And the clamping block is separated from the clamping groove. The operation mode is visual and easy to grasp, and even an operator without professional skills can easily complete dismounting and mounting operation.

The present invention relates to the field of semiconductor technology, and in particular to a deep ultraviolet light-emitting diode epitaxial wafer and a preparation method thereof, comprising: providing a substrate; sequentially epitaxially growing a buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multi-quantum well layer, an electron blocking layer, a P-type AlGaN layer, and a P-type contact layer on the substrate; the undoped AlGaN layer comprising a three-dimensional nucleation layer / a two-dimensional lateral growth layer, a three-dimensional-two-dimensional transition layer, and a two-dimensional planarization layer sequentially deposited along the epitaxial growth direction; the three-dimensional nucleation layer / two-dimensional lateral growth layer comprising a three-dimensional nucleation layer and a two-dimensional lateral growth layer that are periodically and sequentially grown alternately, wherein the Al component content and growth temperature of the three-dimensional-two-dimensional transition layer gradually increase from the Al component content and growth temperature of the two-dimensional lateral growth layer to the Al component content and growth temperature of the two-dimensional planarization layer. The present invention can effectively reduce the dislocation density of the epitaxial wafer, form high-quality high-Al component AlGaN material, and thereby effectively improve the photoelectric performance of the deep ultraviolet light-emitting diode.

A robotic surface cleaning device is described. The robotic surface cleaning device can be configured to traverse a floor surface in a room area to disinfect various surfaces, as well as disinfect the air in the room. The robotic surface cleaning device may include a maneuvering base. The robotic surface cleaning device may also include a support tower attached to the maneuvering base and at least one deployable structure attached to the support tower, wherein the at least one deployable structure is capable of extending and retracting to pass over surfaces in the room area. The at least one deployable structure may include one or more ultraviolet (UV) light sources configured to disinfect surfaces in the room area.The support tower may include at least one air intake vent configured to draw in room air, at least one air sanitizing unit configured with at least one array of UV light-emitting diodes (LEDs), and at least one exhaust vent configured to emit sanitized air.