The invention provides an aluminum-free active region 808nm high-power quantum-well laser with asymmetric structure. From the bottom to the top, the structure of the laser sequentially comprises a substrate, a buffer layer, an N-type lower limiting layer, a lower waveguide layer, a quantum-well layer, an upper waveguide layer, a potential barrier limiting layer, a P-type upper limiting layer, a transition layer and an ohmic contact layer, wherein, the upper waveguide layer and the lower waveguide layer are made of aluminum-free material Indium gallium phosphide, the quantum-well layer made of gallium indium arsenide phosphide material, the waveguide layer and the quantum-well layer form the aluminum-free active region, and one layer potential barrier limiting layer which is made of P-type aluminum gallium indium phosphide material and 50nm-150nm thick and has a band gap wider than that of the upper limiting layer is arranged between the upper limiting layer and the upper waveguide layer. The laser of the invention can increase the optical limiting factor of the P-type material region, reduce the optical leakage towards the P-type material region, reduce optical absorption loss of a current carrier at the highly doped area, and improve the work efficiency of the laser; the structure of the invention also improves the limiting effect of the active region on the carrier, reduce the leakage of the carrier and is favorable to the decrease of the threshold current.