42results about How to "Reduce absorption loss" patented technology

The invention discloses a back contact solar cell, an assembly and a system. The back contact solar cell comprises a silicon substrate, the back surface of the silicon substrate comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged at intervals, and each of the first areas and the second areas comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area of the first area comprises a first passivation layer, a selective transmission layer and a first metal electrode which are sequentially stacked on the surface of the silicon substrate from inside to outside. According to the back contact solar cell, the passivation layer and the selective transmission layer are arranged in the first region and combined with the passivation anti-reflection layer, the excellent passivation contact effect is achieved, a narrow-band-gap highly-doped silicon material does not need to be used, the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and then the performance of the back contact solar cell is improved.

The invention relates to the technical field of laser processing, in particular to a double-laser processing device. Comprising a first laser transmitter and a second laser transmitter, the laser engraving machine further comprises a laser engraving head, a rear reflector switching mechanism, a middle reflector switching mechanism and a front reflector adjusting mechanism. The front reflector adjusting mechanism comprises a first front reflector, a second front reflector and a front adjusting mechanism; the middle reflector switching mechanism comprises a first middle reflector, a second middle reflector and a middle switching mechanism; the rear reflector switching mechanism comprises a first rear reflector, a second rear reflector and a rear switching mechanism. By arranging the reflector switching mechanism, when different lasers need to be used, the corresponding reflectors are switched, the absorption loss of the lasers can be effectively reduced, and the laser utilization rate is improved.

The invention discloses a lithium niobate electro-optical modulator based on interdigital electrodes. The lithium niobate electro-optical modulator comprises a coplanar waveguide electrode structure containing periodically arranged interdigital electrodes, two groups of six modulation waveguides, two groups of four optical waveguide delay lines, two groups of multimode interference couplers, an input waveguide, an output waveguide and a pair of coupling gratings. According to the device, an interdigital electrode structure is used for constructing six electro-optical modulation sections in an upper group and a lower group, and optical waveguide delay lines are used for aligning phases of different electro-optical modulation sections to form an upper group of modulation arms and a lower group of modulation arms. An optical signal enters the input waveguide from the coupling grating on the left side, is divided into two beams through the multi-mode interference coupler, is subjected to equal-size and opposite modulation effects on the upper and lower groups of modulation arms, is combined and coupled in the second multi-mode interference coupler to generate an intensity modulation effect, and is output through the output waveguide and the coupling grating. The electro-optical modulator provided by the invention can be further expanded on the number of times of electrode multiplexing, and is compatible with other multiplexing technologies at the same time.

The invention provides a terahertz suspension core optical fiber, which belongs to the technical field of optical fibers and comprises an outer sleeve, a plurality of I-type dielectric tubes and a plurality of II-type dielectric tubes with the same number as the I-type dielectric tubes, wherein the plurality of I-type medium pipes are arranged in the outer sleeve, and each I-type medium pipe is tangent to the outer sleeve; the multiple II-type medium pipes are arranged in the outer sleeve, and one II-type medium pipe is arranged on the outer wall of each I-type medium pipe in a tangent mode; based on a modified total internal reflection principle, the dependence of a traditional suspension core optical fiber on a thin arm in structure is avoided; the simple optical fiber structure with all structural units being circular boundaries has more prominent advantages in optical fiber manufacturing. The hollow porous structure can ensure that most of energy in the mode is distributed in the air, so that the absorption loss is effectively reduced.

The invention provides a vertical perovskite soft X-ray detector, a preparation method and an imaging array, which can be applied to the technical field of X-ray detection. The vertical perovskite soft X-ray detector comprises a bottom electrode, a carrier transport layer, a perovskite light absorption layer, a passivation layer and a top electrode from bottom to top, wherein the top electrode comprises a plurality of nano holes, the plurality of nano holes in the top electrode penetrate through the top electrode, the carrier transport layer is located on a lower interface of the perovskite light absorption layer, and the passivation layer is located on an upper interface of the perovskite light absorption layer.

The invention discloses an electro-absorption modulated laser chip and a manufacturing method thereof, and relates to the technical field of semiconductor devices.The chip comprises a substrate, a modulator layer, a passive waveguide layer, a laser layer, an amplifier layer, a wrapping layer and a contact layer, the passive waveguide layer is arranged in a spacer region between the laser layer and the modulator layer in a butt-joint growth mode, the amplifier region is arranged on the other side of the modulator layer, the laser layer is arranged in the laser region on one side of the passive waveguide layer in the spacer region in a butt-joint growth mode, and the amplifier layer is arranged above the passive waveguide layer in the amplifier region. The cladding layer and the contact layer are sequentially arranged above the functional layer, a mask is used for covering a specific area in the butt-joint growth process, and the mask is removed after growth; according to the technical scheme, the active gain material of the amplifier region can be manufactured on the passive waveguide material while the manufacturing steps are simplified, the optical signal loss is reduced, and the chip saturated light output power is improved.

The invention belongs to the technical field of spectrum detection, and particularly relates to a light LIBS (laser-induced breakdown spectroscopy) online detection device and method capable of automatically focusing, and the device sequentially comprises a photoelectric switch, a pre-detection system, a controller, a delayer, a pulse laser, a reflector, a zooming unit, an ellipsoidal reflector, a displacement adjusting table and a transmission diaphragm according to a control logic and a light propagation path, an optical fiber coupling unit, a spectrometer and a signal intensity detector. According to the telecentric lens imaging pre-detection system, zooming can be easily achieved in the mode that the zoom lens and the displacement adjusting table drive the ellipsoidal reflector and the optical fiber coupling unit to move synchronously, the telecentric lens imaging pre-detection system can adapt to objects of different heights and forms, the problem that the motion load is large in the zooming process is solved, light weight is achieved, and the imaging precision is improved through the telecentric lens imaging pre-detection system. The focusing range can be judged in advance without changing from the maximum focusing range to the minimum focusing range, so that the detection and analysis efficiency is improved.

The invention discloses a novel passivation selective contact structure, a solar cell, an assembly and a system. The novel passivation selective contact structure comprises a silicon substrate, wherein the surface of the silicon substrate comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area comprises a passivation layer, a selective transmission layer and a metal electrode which are sequentially stacked from inside to outside, the passivation layer covers a partial area of the surface of the silicon substrate, and the projection of the selective transmission layer on the surface of the silicon substrate covers a partial area of the surface of the silicon substrate. According to the invention, the passivation anti-reflection layer, the selective transmission layer and the passivation layer act synergistically, so that an excellent passivation contact effect is realized; and a narrow-band-gap highly-doped silicon material does not need to be used, so that the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and the performance of the solar cell is further improved.

The invention discloses an electro-optical modulator and a preparation method thereof. The electro-optical modulator comprises a substrate layer; the resin layer is arranged on one side of the substrate layer; the film lithium niobate layer is arranged on the side, away from the substrate layer, of the resin layer, and ridge waveguides are arranged on the surface of the part, close to the resin layer, of the film lithium niobate layer; and the metal electrode layer is arranged on the partial surface, far away from the resin layer, of the thin film lithium niobate layer. The thin-film lithium niobate electro-optical modulator with the metal electrode layer and the ridge waveguide in different planes is adopted, low half-wave voltage and low light absorption loss can be achieved, meanwhile, the speed and impedance matching of microwaves and light waves are achieved, and therefore microwave loss is reduced.

The invention discloses a GaN-based photoelectric refractive index sensor integrated with a guided-mode resonant grating and a preparation method of the GaN-based photoelectric refractive index sensor, and relates to the technical field of semiconductor photoelectric sensors. The LED light source comprises a substrate layer, a silicon dioxide bonding layer is formed above the substrate layer, an LED structure and a light detector structure are formed on the upper portion of the silicon dioxide layer, and an electric isolation area is arranged between the LED structure and the light detector structure. The gallium nitride buffer layer and the undoped gallium nitride layer are removed by adopting the inductive coupling plasma etching technology, the n-type gallium nitride layer is further etched and thinned, and finally the grating structure is formed by etching, so that the integration of the thinning process and the grating optimizes the light propagation path, improves the light extraction efficiency, enhances the coupling effect between the light and the medium to be detected, and improves the detection accuracy. In addition, monolithic integration of the light emission function and the light detection function is achieved, a system-level sensor chip can be achieved by combining the driving circuit and the signal processing circuit, and the integration level of the system is improved.

The present invention relates to a laser with a strain-modulated upper waveguide layer and a growth method thereof. The semiconductor laser comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein the upper waveguide layer is a strain-modulated upper waveguide layer; the semiconductor laser forms a strain-modulated upper waveguide layer by regulating the peak electron drift rate distribution, deformation potential distribution, bulk elastic modulus distribution, and polarization optical phonon energy distribution of the upper waveguide layer, thereby suppressing spontaneous polarization and piezoelectric polarization effects, improving crystal quality, reducing non-radiative recombination, suppressing QCSE effects, reducing energy band tilt, and increasing the spatial overlap probability of electron-hole wave functions, thereby improving radiative recombination efficiency and reducing light absorption loss.

The invention belongs to the field of solar cells, and particularly relates to a passivation contact composite layer and a perovskite-crystalline silicon laminated solar cell. According to the passivation contact composite layer structure, surface passivation, electron selective transmission and carrier recombination of the silicon-bottom battery can be realized at the same time. The passivation contact composite layer comprises a SiO2 tunneling layer, a ZnO-based electron selective transmission layer and a hydrogen passivation cover layer. The wide-band-gap ZnO-based electron selective transmission layer can avoid the problem of optical parasitic absorption caused by passivation contact of the silicon thin film and has high electron concentration and bulk conductivity, and the ZnO-based electron selective transmission layer can further optimize the optical and electrical properties of the ZnO-based electron selective transmission layer by doping one or more of B, Al, Ga and H elements. In addition, in order to form good contact, the hydrogen passivation cap layer can be reserved or removed according to the conductivity type and the device structure. The ZnO-based electron selective transmission layer can be covered with interface layers such as MgOx, Mg, Al or Ti, so that the carrier recombination effect is further enhanced.

The invention provides a single crystal thin film and a preparation method and application thereof, the single crystal thin film comprises a substrate layer, an isolation layer, a conductive layer and a pyroelectric crystal thin film layer which are sequentially stacked, the resistivity of the conductive layer is less than 100 ohm cm, and the transparent window of the conductive layer is 500 nm to 1.6 [mu] m. The single-crystal thin film provided by the invention can avoid polarization defects, so that the single domain rate of the single-crystal thin film can be improved, and the preparation process of the single-crystal thin film is simple.

The invention discloses an electro-optical modulation structure with high modulation efficiency, which comprises a ground electrode, a signal electrode, an optical waveguide and a substrate, and is characterized in that the ground electrode, the signal electrode and the optical waveguide are all arranged on the substrate, the optical waveguide is positioned between the ground electrode and the signal electrode, and the electrode materials of the ground electrode and the signal electrode are near-zero refractive index electrode materials; the ground electrode and the signal electrode are used for generating an electric field acting on the optical waveguide, so that the electro-optical characteristic of the optical waveguide is changed. The embodiment of the invention is simple in structure, can effectively improve the electro-optical modulation efficiency, and can be widely applied to the technical field of electro-optical modulation.

The invention provides a semiconductor laser with a light absorption loss suppression layer, which comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer which are sequentially arranged from bottom to top, and is characterized in that the light absorption loss suppression layer is arranged between the electron blocking layer and the upper coating layer; the light absorption loss suppression layer and the electron blocking layer both have a dielectric constant change trend, an electron effective mass change trend and a conduction band effective state density change trend. The dielectric constant change trend, the electron effective mass change trend and the conduction band effective state density change trend in the light absorption loss suppression layer and the electron blocking layer are set, and the carrier distribution of the laser and the laser light field distribution of stimulated radiation are regulated and controlled, so that the internal light field is far away from the highlight absorption area of the electron blocking layer and the upper coating layer; and the absorption loss of a non-ionized Mg acceptor in a high light absorption area to a light field is reduced.

The invention relates to a low-loss bridge type heater structure and application thereof, the heater structure comprises a plurality of heater units arranged in parallel, the length of each heater unit is larger than that of a heated unit so as to form a bridge type, and the heater units are connected with a metal layer. According to the low-loss bridge type heater structure, light absorption of heater materials can be reduced, absorption loss can be reduced, the distance between the heater and a heated unit can be further reduced, the heat regulation efficiency is improved, power consumption is reduced, the heat regulation rate is increased, meanwhile, the resistance value of a heating device is reduced through the designed bridge type structure, and the heat regulation efficiency is improved. The compatibility with an electrical system is improved, the condition of overheat breakdown is avoided, and the method has a good application prospect.

The application discloses a flue gas analyzer with a flue gas pretreatment structure, and aims to provide a flue gas analyzer with compact structure and reduced absorption effect of condensed water on flue gas. The application comprises a host, wherein a flue gas pretreatment structure is arranged in the host, the flue gas pretreatment structure comprises a gas-liquid separation module, a desiccant module and a heat dissipation module which are connected in sequence, the gas-liquid separation module comprises a gas chamber shell, a cavity is arranged in the gas chamber shell, an air inlet nozzle, an air outlet nozzle and a water outlet nozzle which are in communication with the cavity are arranged on the gas chamber shell, the desiccant module comprises a temperature control module, a frost film and a temperature detector, the temperature control module is arranged on the inner side of the heat dissipation module, and the frost film and the temperature detector are both arranged on a temperature control surface of the temperature control module. The application is applied to the technical field of flue gas analyzers.

The invention discloses a vertically stacked full-color Micro-LED display device based on a photonic crystal structure, the vertically stacked full-color Micro-LED display device comprises a substrate layer, a red light Micro-LED layer, a two-dimensional photonic crystal connecting layer, a green light Micro-LED, a two-dimensional photonic crystal connecting layer, a blue light Micro-LED, a GaP connecting layer and an ITO / air interface layer from bottom to top in sequence, the two-dimensional photonic crystal is composed of indium bumps and air holes, the period of the two-dimensional photonic crystal is 100nm-2000nm, and the interval of the indium bumps and the air holes is 100nm-2000nm. The duty ratio is 20%-80%, and the height is 20 nm-500 nm. A two-dimensional photonic crystal structure is used and optimized, and red light and green light are reflected by adjusting the forbidden bandwidth of the photonic crystal, so that the light extraction efficiency of the bottom red light-emitting unit and the middle green light-emitting unit is improved, and the absorption loss of the red light and the green light is reduced; the problems that due to the fact that different-color connecting layers of an existing vertical stacking type Micro-LED display device absorb light seriously, the overall light emitting efficiency of the device is low, the chromaticity is not good, and use is affected are solved.

The present invention relates to an 808nm semiconductor laser device with an oxidation confinement structure and a preparation method thereof, and belongs to the field of optoelectronic technology. The device comprises, from bottom to top, an N-type ohmic contact electrode, a substrate, a buffer layer, a lower confinement layer, a lower waveguide layer, a quantum well, an upper waveguide layer, an upper confinement layer, an Al x6 Ga 1‑x6 As high Al composition layer and ohmic contact layer, Al x6 Ga 1‑x6 An oxide insulating confinement layer is arranged between the As high Al component layer and the ohmic contact layer, and a P-type ohmic contact electrode is arranged on the upper side of the oxide insulating confinement layer. The present invention adopts an extremely double asymmetric structure design of a thin P confinement layer, and adds a high Al component layer between the P confinement layer and the cap layer to compensate for the fundamental mode field leakage that may be caused by the extremely thin confinement layer, thereby compressing the light field, reducing losses, and improving output power and conversion efficiency.

The invention discloses a semiconductor laser with a lower waveguide layer for suppressing heat fading, which sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer from bottom to top, the waveguide layer under the low oscillation threshold is any one or any combination of an InGaN / GaN superlattice, an InGaN / AlGaN superlattice, an InGaN / AlInGaN superlattice, an InGaN / AlInN superlattice, a GaN / AlGaN superlattice, a GaN / AlInGaN superlattice and a GaN / AlN superlattice, and the thickness of the waveguide layer under the low oscillation threshold is 5-1000 nm. The waveguide side wall scattering loss and quantum well absorption loss of the laser are reduced, the internal light absorption loss of the laser is reduced, heat fading caused by non-radiative recombination is inhibited, the threshold current of the laser is reduced, and the slope efficiency is improved.

The invention discloses a multi-component doped ultralow-loss optical fiber and a preparation method thereof. The optical fiber comprises a fiber core layer, a secondary core layer, a gradient control layer, a nonlinear functional layer, an absorption layer, an isolation layer, a thermal stability layer, a supporting layer, a transition protection layer and an outer cladding which are arranged from inside to outside. According to the optical fiber, the 1550nm wave band attenuation is reduced to 0.145 dB / km, and ultralow loss is realized; the diameter of a mode field reaches 11-16 [mu] m, and mode interference is effectively reduced; the optical fiber supports communication of S + C + L wave bands of 1300-1625 nm, when 100 circles of looping with the radius of 60 mm are carried out, the maximum additional attenuation at the position of 1550 nm does not exceed 0.01 dB, and the optical fiber is suitable for long-distance communication; the environment adaptability of the optical fiber is high, the stability of the optical fiber in high-temperature, high-humidity and strong-mechanical-stress environments is enhanced by arranging the thermal stability layer and the supporting layer and combining the zirconium doping design of the outer cladding, and the optical fiber is particularly suitable for submarine optical cables and high-reliability backbone networks.

The invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, the quantum tunneling hole injection layer is arranged in the laser, and SIMS test Al ion strength or Al atom concentration distribution in the quantum tunneling hole injection layer has asymmetric double-S-type function distribution. A peak value region of valence band effective state density and a valley value region of hole mobility are formed in the quantum tunneling hole injection layer, and the peak value position of the valence band effective state density just corresponds to the valley value position of the hole mobility, so that a quantum tunneling region is formed, and diffusion, migration and hot electron emission of hole carriers are blocked. The hole tunneling probability of the layer is enhanced, hole carriers are made to jump and pass through the upper limiting layer and the upper waveguide layer in a quantum tunneling mode, hole wave function distribution and light field distribution injected into the active layer are regulated and controlled, the quantum recombination efficiency of the gallium nitride laser is enhanced, light absorption loss is reduced, and the threshold value and the lasing power of the laser are reduced; and the aging light attenuation of the laser is improved.

The present application relates to the technical field of functional film, in particular to a low-radiation energy-saving base film for building and a preparation method thereof.The present application overcomes the problem that the mechanical property and optical property of the energy-saving base film in the prior art cannot be considered simultaneously.The present application is prepared from a PET substrate with a skin-core structure, a functional coating and a seven-layer magnetron sputtering film;the skin layer of the PET substrate is PET modified by melt grafting with UVA and HALS additives;the functional coating comprises a water-based PUA emulsion, nano-silicon dioxide and KH550;the seven-layer magnetron sputtering film comprises, from bottom to top, a TiON bottom layer, a Nb2O5 lower layer, an Ag-Pd-Ti lower layer, an AZO layer, an Ag-Pd-Ti upper layer, a Nb2O5 upper layer and a TiON top layer.Through the synergistic effect of grafting modification, functional coating and multi-layer sputtering, the present application maintains the mechanical property while realizing the balance of visible light transmittance and infrared thermal radiation reflectance, and can be applied to the energy-saving field such as building glass.

The application provides a semiconductor laser element provided with an ion conjugate layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; the ion conjugate layer is arranged between the active layer and the upper wave layer and between the active layer and the lower waveguide layer; the ion conjugate layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization, and then regulate the carrier and Fermi level, improve the small rabbit degeneracy of the laser element, reduce the absorption loss of the free carrier, promote the stimulated radiation to exceed the spontaneous radiation, improve the particle inversion of the non-equilibrium carrier in the resonant cavity of the laser element, reduce the lasing threshold, realize the room-temperature continuous oscillation, improve the slope efficiency of the laser element, reduce the valence band step of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

The present application relates to a kind of deep ultraviolet grating polarizers and preparation method thereof, belong to polarizer technical field, including from bottom to top sequentially connected substrate, first dielectric layer, second dielectric layer and interval setting line grid on the upper surface of second dielectric layer, the upper surface of second dielectric layer between adjacent line grid is provided with metal layer, line grid includes from bottom to top sequentially connected first dielectric layer, second dielectric layer and metal layer;The present application is by adding high low refractive index alternately between substrate and metal line grid first, second dielectric layer, and metal layer is set on the upper surface of second dielectric layer in line grid gap, constructs the medium-metal composite structure with resonance coupling effect.The design effectively controls the equivalent optical admittance of deep ultraviolet band, significantly enhances the transmittance of TE polarized light, while maintaining the efficient inhibition to TM polarization, so as to improve the polarization efficiency while reducing metal absorption loss.As a whole, the polarizer has the advantages of high transmittance, high extinction ratio and the like.

The invention discloses a GaN-based semiconductor laser with a limiting factor enhancement layer, which sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper coating layer from bottom to top, and is characterized in that the limiting factor enhancement layer is arranged between the electron blocking layer and the upper coating layer; the limiting factor enhancement layer comprises a first limiting factor enhancement layer and a second limiting factor enhancement layer; and the thickness of the limiting factor enhancement layer is 5-1000 nm. According to the invention, refractive index coefficients, electron mobility, breakdown field strength and change angles and change curves of electron affinity of the first limiting factor enhancement layer and the second limiting factor enhancement layer are designed, an effective refractive index difference is regulated and controlled to realize a high kink level, a far-image FFP image with a low aspect ratio is realized, a horizontal divergence angle is reduced, stray light and leakage light are reduced, and the performance of the device is improved. The far-field FFP image with local interference is reduced, and the optical confinement effect and the light beam quality factor are improved.

The invention relates to the technical field of silicon-based integrated photoelectronics, and particularly discloses a silicon-based electro-optical modulator with an enhanced modulation bandwidth and a manufacturing method of the silicon-based electro-optical modulator. According to the traveling wave electrode structure, the effective refractive index is reduced through the specific electrode width W and the specific electrode distance D, phase velocity matching of light waves and microwaves is achieved, and therefore the modulation efficiency and the bandwidth are improved; the ridge waveguide structure optimizes the overlapping degree of an optical mode and a microwave mode by adjusting the ridge height H and the width B, and carrier absorption loss is reduced; the electro-optical modulator adopts the periodically loaded coplanar waveguide traveling wave electrode, so that the refractive index is effectively reduced, phase velocity matching of light waves and microwaves is realized, and the modulation efficiency and the bandwidth are remarkably improved. Meanwhile, by introducing the ridge-shaped waveguide structure and accurately adjusting the size parameter of the ridge-shaped waveguide structure, the overlapping degree of an optical mode and a microwave mode is optimized, the carrier absorption loss is reduced, and the device performance is further improved.

The invention discloses a gallium nitride-based semiconductor laser chip with a low-oscillation-threshold lower waveguide layer, which sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper coating layer from bottom to top, and is characterized in that the lower waveguide layer is the low-oscillation-threshold lower waveguide layer; the waveguide layer under the low oscillation threshold is any one or any combination of InGaN, GaN, InN and AlInGaN; and the deformation potential distribution of the waveguide layer under the low oscillation threshold value has broken line type distribution. According to the invention, the deformation potential of the lower waveguide layer and the active layer of the laser is regulated and controlled, the carrier delocalization of the active layer and the lower waveguide layer is reduced, the electron hole injection and transport uniformity is improved, the population inversion is accelerated, and the threshold current density is reduced.

The application relates to the technical field of semiconductors, and particularly relates to a high-brightness red LED chip for display and a manufacturing method thereof. The high-brightness red LED chip for display comprises, from bottom to top, an AlN substrate, an Au bonding layer, an In bonding layer, a barrier layer, a silver mirror layer, a transparent conductive layer, a silicon dioxide pattern layer, a magnesium fluoride pattern layer, a P-type window layer, a P-type transition layer, a P-type confinement layer, an MQW light-emitting layer, an N-type confinement layer, an N-type current expansion layer, an N-type electrode protection layer and an N-type ohmic contact layer; the chip sidewall has a step cutting path etched from the chip upper surface to the P-type window layer, the step cutting path is locally widened on the opposite side of the N electrode to form a step surface, the step surface is used for arranging the P electrode, and the P electrode expansion pad is embedded in the transparent conductive layer; the above LED chip structure provided by the application has good current expansion uniformity, luminous brightness, heat dissipation and reliability.

The invention discloses a narrow linewidth vertical cavity surface emitting laser regulated by an asymmetric inner cavity, and relates to the field of semiconductor lasers, in particular to a narrow linewidth vertical cavity surface emitting laser regulated by an asymmetric inner cavity and a preparation method thereof. The laser is provided with a first electrode, a P-type Bragg reflection unit, an oxidation restriction layer, an active layer, an expansion layer, an N-type Bragg reflection unit, a substrate and a second electrode in sequence from top to bottom. The P-type Bragg reflection unit comprises a P-type Bragg reflection layer with a preset P-DBR pair number stacked, and the N-type Bragg reflection unit comprises an N-type Bragg reflection layer with a preset N-DBR pair number stacked, thereby solving the problem of large linewidth of the existing vertical cavity surface emitting laser.