9results about How to "Reduce absorption loss" patented technology

The application discloses a flue gas analyzer with a flue gas pretreatment structure, and aims to provide a flue gas analyzer with compact structure and reduced absorption effect of condensed water on flue gas. The application comprises a host, wherein a flue gas pretreatment structure is arranged in the host, the flue gas pretreatment structure comprises a gas-liquid separation module, a desiccant module and a heat dissipation module which are connected in sequence, the gas-liquid separation module comprises a gas chamber shell, a cavity is arranged in the gas chamber shell, an air inlet nozzle, an air outlet nozzle and a water outlet nozzle which are in communication with the cavity are arranged on the gas chamber shell, the desiccant module comprises a temperature control module, a frost film and a temperature detector, the temperature control module is arranged on the inner side of the heat dissipation module, and the frost film and the temperature detector are both arranged on a temperature control surface of the temperature control module. The application is applied to the technical field of flue gas analyzers.

The invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, the quantum tunneling hole injection layer is arranged in the laser, and SIMS test Al ion strength or Al atom concentration distribution in the quantum tunneling hole injection layer has asymmetric double-S-type function distribution. A peak value region of valence band effective state density and a valley value region of hole mobility are formed in the quantum tunneling hole injection layer, and the peak value position of the valence band effective state density just corresponds to the valley value position of the hole mobility, so that a quantum tunneling region is formed, and diffusion, migration and hot electron emission of hole carriers are blocked. The hole tunneling probability of the layer is enhanced, hole carriers are made to jump and pass through the upper limiting layer and the upper waveguide layer in a quantum tunneling mode, hole wave function distribution and light field distribution injected into the active layer are regulated and controlled, the quantum recombination efficiency of the gallium nitride laser is enhanced, light absorption loss is reduced, and the threshold value and the lasing power of the laser are reduced; and the aging light attenuation of the laser is improved.

The present application relates to the technical field of functional film, in particular to a low-radiation energy-saving base film for building and a preparation method thereof.The present application overcomes the problem that the mechanical property and optical property of the energy-saving base film in the prior art cannot be considered simultaneously.The present application is prepared from a PET substrate with a skin-core structure, a functional coating and a seven-layer magnetron sputtering film;the skin layer of the PET substrate is PET modified by melt grafting with UVA and HALS additives;the functional coating comprises a water-based PUA emulsion, nano-silicon dioxide and KH550;the seven-layer magnetron sputtering film comprises, from bottom to top, a TiON bottom layer, a Nb2O5 lower layer, an Ag-Pd-Ti lower layer, an AZO layer, an Ag-Pd-Ti upper layer, a Nb2O5 upper layer and a TiON top layer.Through the synergistic effect of grafting modification, functional coating and multi-layer sputtering, the present application maintains the mechanical property while realizing the balance of visible light transmittance and infrared thermal radiation reflectance, and can be applied to the energy-saving field such as building glass.

The application provides a semiconductor laser element provided with an ion conjugate layer, and relates to the technical field of semiconductor photoelectric devices, and sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper limiting layer from bottom to top; the ion conjugate layer is arranged between the active layer and the upper wave layer and between the active layer and the lower waveguide layer; the ion conjugate layer can improve the molar absorption coefficient and compensate the polarization field, induce local polarization, and then regulate the carrier and Fermi level, improve the small rabbit degeneracy of the laser element, reduce the absorption loss of the free carrier, promote the stimulated radiation to exceed the spontaneous radiation, improve the particle inversion of the non-equilibrium carrier in the resonant cavity of the laser element, reduce the lasing threshold, realize the room-temperature continuous oscillation, improve the slope efficiency of the laser element, reduce the valence band step of the active layer, improve the hole injection efficiency and injection uniformity, and improve the peak gain and gain uniformity of the laser element.

The present application relates to a kind of deep ultraviolet grating polarizers and preparation method thereof, belong to polarizer technical field, including from bottom to top sequentially connected substrate, first dielectric layer, second dielectric layer and interval setting line grid on the upper surface of second dielectric layer, the upper surface of second dielectric layer between adjacent line grid is provided with metal layer, line grid includes from bottom to top sequentially connected first dielectric layer, second dielectric layer and metal layer;The present application is by adding high low refractive index alternately between substrate and metal line grid first, second dielectric layer, and metal layer is set on the upper surface of second dielectric layer in line grid gap, constructs the medium-metal composite structure with resonance coupling effect.The design effectively controls the equivalent optical admittance of deep ultraviolet band, significantly enhances the transmittance of TE polarized light, while maintaining the efficient inhibition to TM polarization, so as to improve the polarization efficiency while reducing metal absorption loss.As a whole, the polarizer has the advantages of high transmittance, high extinction ratio and the like.

The application relates to the technical field of semiconductors, and particularly relates to a high-brightness red LED chip for display and a manufacturing method thereof. The high-brightness red LED chip for display comprises, from bottom to top, an AlN substrate, an Au bonding layer, an In bonding layer, a barrier layer, a silver mirror layer, a transparent conductive layer, a silicon dioxide pattern layer, a magnesium fluoride pattern layer, a P-type window layer, a P-type transition layer, a P-type confinement layer, an MQW light-emitting layer, an N-type confinement layer, an N-type current expansion layer, an N-type electrode protection layer and an N-type ohmic contact layer; the chip sidewall has a step cutting path etched from the chip upper surface to the P-type window layer, the step cutting path is locally widened on the opposite side of the N electrode to form a step surface, the step surface is used for arranging the P electrode, and the P electrode expansion pad is embedded in the transparent conductive layer; the above LED chip structure provided by the application has good current expansion uniformity, luminous brightness, heat dissipation and reliability.

This invention discloses a rare-earth-doped optical imaging film and its preparation method. The method specifically includes: providing an optical glass substrate and pre-treating its surface; sputtering a base layer onto the surface of the optical glass substrate; depositing a rare-earth-doped layer onto the surface of the base layer; etching micro / nano structures onto the surface of the doped layer; using the micro / nano structures to enhance the luminescence efficiency of the doped layer; depositing a hydrophobic layer onto the surfaces of the doped layer and the micro / nano structures; and annealing the optical glass substrate forming the base layer, doped layer, and hydrophobic layer to obtain the rare-earth-doped optical imaging film. Through optimized design of the base layer, doped layer, and micro / nano structures, the optical imaging film exhibits higher luminescence efficiency, lower light loss, and maintains stable optical properties during long-term use. Therefore, this invention solves the technical problem of the imbalance between high refractive index and low absorption loss in existing optical imaging films.

The utility model discloses a nitride semiconductor laser, which comprises a heat dissipation heat sink and a laser structure, and is characterized in that the laser structure comprises a first type waveguide layer, a quantum well layer and a second type waveguide layer which are stacked in sequence; wherein the first type is a P type, and the second type is an N type; or, the first type is an N type, and the second type is a P type; the doping concentration of the P-type waveguide layer is gradually changed along the growth direction of the device; the nitride semiconductor laser is obtained by growing and stripping on the gallium surface of the gallium nitride substrate. The gallium-based solar cell is obtained by growing and stripping on a gallium surface, thereby being beneficial to heat scattering and improving the high-power output performance of the device; and meanwhile, in cooperation with gradient doping of the P-type waveguide layer, penetration dislocation can be reduced through staged lattice matching.

The application provides a passive room-division monitoring system and a monitoring tag for inhibiting room-division antenna intermodulation degradation. The working frequency band of the tag antenna is designed as 920-960 MHz, so that the working frequency band of the tag antenna covers the intermodulation interference frequency band, then a duplexer is used to decouple the radio frequency signals received through the tag antenna, effectively strips the radio frequency signals of the intermodulation frequency band from the working frequency band of the monitoring tag and transmits the radio frequency signals to a resistance load for heat consumption, and decouples the radio frequency signals of the effective frequency band and transmits the radio frequency signals to an RFID tag chip, so that the invasion of the intermodulation frequency generated by the monitoring tag to the working frequency band of the room-division antenna is avoided, and the degradation influence on the intermodulation performance of the room-division antenna is fully inhibited.