189results about How to "Reduce absorption loss" patented technology

An optoelectronic device includes a planar active element, a vertical waveguide surrounding the active element in the vertical direction, and a lateral waveguide comprising at least one active section and at least one filter section following each other in the longitudinal direction. At least part of the active element within the active section generates optical gain in response to above-threshold pumping. The broad lateral waveguide in the active section can localize multiple lateral optical modes. In the filter section, no lateral confinement is provided for the lateral optical modes. The device further comprises means to ensure low absorption loss in the filter section and, therefore, ensure high efficiency. In one embodiment low absorption loss is achieved by pumping of at least part of the active element within the filter section. In another embodiment, the active element has small overlap with the vertical optical modes.

This invention discloses an anti-reflection film of silicon solar cell used in solar cells by depositing a rich silicon SiN film on the positive surface of a silicon chip and a SiN film with ideal match on the rich silicon SiN film, in which, and the film content closing to the Si chip surface is high and the surface pasivation effect is better than the SiN film approaching to the idea match, the surface composition speed is more than one time less than the normal matched SiN film, and the rich Si film is thin and only absorbs 20%-30% short waves with the wavelength about 300nm and does not absorb long-middle lightwaves and other composition approaches to ideal chemical match.

The invention relates to a two-dimensional stratified material based practical saturable absorber and a production method thereof, and belongs to the field of saturable absorbers of lasers. The two-dimensional stratified material based practical saturable absorber comprises a substrate, a high-reflection layer, a saturable absorption layer and a functional layer. One end face of the functional layer is connected with the saturable absorption layer, one end face of the saturable absorption layer is connected with the high-reflection layer, and one end face of the high-reflection layer is connected with the substrate. By the two-dimensional stratified material based practical saturable absorber and the production method thereof, application of the lasers, such as Q-switching, mode locking and optical signal processing, is realized. By the high-reflection layer formed by composite materials, absorption loss is reduced and reflection rate is increased, and optimal material combinations can be found in terms of different wave lengths.

The invention relates to a practical saturable absorption device based on black phosphorus and belongs to the field of saturable absorption devices of laser devices. The practical saturable absorption device based on the black phosphorus is formed by combining four layers of materials or mutual combining three layers of the four layers of materials or combining the four layers of materials combined mutually and functional insertion layers added on the upper portion and the lower portion of the four layers of materials at will or combining the saturable absorption layers and any one layer of materials or combining the saturable absorption layers, and each saturable absorption layer comprises at least one of a black phosphorus film, black phosphorus nano lamella particles, black phosphorus ramifications and functionalization black phosphorus. According to the practical saturable absorption device based on the black phosphorus, the application of Q regulation and mode locking of the laser device, optical signal processing and the like is achieved, and more importantly, the effect that the modulation depth can be flexibly regulated by giving play to the property of the black phosphorus is achieved.

The present invention provides a microstructured hollow-core optical fiber. The optical fiber comprises first type medium circular tubes, second type medium circular tubes, and a third type medium circular tube; the first type medium tubes are nested in the second type medium circular tubes and are periodically distributed along the circumference of the second type medium circular tubes; intervalsbetween the outer walls of the adjacent first type medium circular tubes are greater than 0; the second type medium circular tubes are nested in the third type medium circular tube; and the first type medium circular tubes, the second type medium circular tubes and the third type medium circular tube are connected with one another in a tangent or intersecting manner. According to the microstructured hollow-core optical fiber of the invention, confinement loss can be lowered by simply increasing the number of the second type medium circular tubes, so that a difficulty that the confinement lossof a negative-curvature anti-resonant hollow-core optical fiber cannot be reduced by simply adopting a means of increasing annular layers which assists in reducing the confinement loss of a hollow-core photonic band gap optical fiber can be eliminated. According to the optical fiber provided by the invention, too many nodes will not be introduced into the cross section of the optical fiber, and anew scheme and idea can be provided for the design and manufacture of a broadband low-loss hollow-core optical fiber.

The invention discloses a packaging method for white light LED surface light source module, which insists of processing steps such as making circuit boards, fixing crystal, bonding, packaging basic bond line and so on. The invention adopts steps: distributing multiparticulate miniwatt LED chips on a circuit board and packaging integrally to form a high power LED light source, dispersing the heat source, reducing heat productivity on a unit area, reducing heat dispersion requirement standard. Adopting white colloid as solid crystal glue can improve more than 70% of back face emergent light utilance. The basic bond line packaging makes microcosmic light source points distribute uniformly on a bigger area, reduce luminous intensity on a unit area. The light flux on a unit area of traditional LED light source is more than 100 lm/cm<2> generally, while light flux on a unit area of the invention is less than 51 lm/cm<2> generally, thereby glaring is overcame.

The invention relates to the technical field of T-Hz waveguide and provides a high-birefringence sub-wavelength porous T-Hz optical fiber. An ellipse ventage structure of which the size is much smaller than the wave length is added in an optical fiber core of the high-birefringence sub-wavelength porous T-Hz optical fiber; and the invention has the sub-wavelength mode bound capability while the high birefringence is provided at the T-Hz wave band, and also has high-birefringence property in the wider T-Hz bandwidth. The high-birefringence sub-wavelength porous T-Hz optical fiber can be used for the manufacturing of a sub-wavelength size T-Hz device, thereby being applied in the fields of sensing and detection and communication of T-Hz.

The invention provides a fluorine-containing polyimide optical waveguide material and the preparing method thereof relating to the integrating polymer material preparing method in optical device, which can be applied in waveguide optics device, the material is obtained from condensation and copolymerization of three monomers, that is the fluorine-containing polyimide is condensed and copolymerized from two diamine monomers and one dianlydride monomer or from two diamine monomers and one dianlydride monomer, after purification, the fluorine-containing polyimide n-methyl-2-pyrrolidone solution is obtained, and is then dropped on center of clean substrate for spin coating to form film, and desiccation and curing. The glass transition temperature of the material is above 200 DEG C, in the field of optical communication on 1550nm the optical loss is less than 0.6dB/cm, the refractive index on 1550nm is 1.5-1.6.

The invention discloses a quantum cascade laser regular polygonal microcavity laser, comprising a substrate of a quantum cascade epitaxial layer, a lower limiting layer positioned on the substrate, an active area/an injecting area positioned on the lower limiting layer; an upper limiting layer arranged on the active area/an injecting area, and an upper wrapping layer containing an ohmic contact layer, wherein the side walls of the lower limiting layer, the active area/the injecting area, the upper limiting layer and the upper wrapping layer are wrapped by an insulating layer which is wrapped by a front electrode layer. The invention discloses a manufacturing method of the quantum cascade laser regular polygonal microcavity laser simultaneously. The invention uses a SiO2 insulating layer and a Ti/Ag/Au electrode layer to wrap the etched side wall of the quantum cascade laser regular polygonal microcavity laser, thus enhancing the limitation for the light field in a microcavity, and improving the quality factor of the mode in the microcavity; and the laser has simple structure and convenient manufacturing technique.

The invention relates to a thin-film photovoltaic cell and a manufacturing method thereof. The thin-film photovoltaic cell comprises a lining, an electrode layer, a p-type absorption layer, an n-type buffer layer, a high-resistance layer and a window layer, which are sequentially arranged in an overlapping way from the bottom up. The window layer is a near infrared waveband low-absorption high-conductivity ZnO-based transparent conductive window layer. The thin-film photovoltaic cell is in a light trapping structure. The manufacturing method of the thin-film photovoltaic cell comprises the steps of: providing a lining; depositing an electrode layer; depositing a p-type absorption layer; depositing an n-type buffer layer; depositing a high-resistance layer; depositing a near infrared low-absorption ZnO-based window layer; and forming a light trapping structure. The thin-film photovoltaic cell has the absorption layer of small thickness and has higher effective light utilization ratio.

The invention relates to a manufacturing method of a quartz optical fiber image bundle. A quartz perform with a core skin structure is drawn into a quartz optical fiber filament, wherein the filament diameter of the quartz optical fiber filament is less than 50 microns; during the wire drawing process, a glass fiber impregnating compound is coated on the optical fiber filament, so that the optical fiber filament is protected; and a sliding filament trolling method is utilized to carry out processing on the drawn quartz optical fiber filament to manufacture a quartz optical fiber image bundle.

The invention relates to the field of solar cells, and particularly provides a flexible organic solar cell and a full-printing preparation method thereof. The silver conductive ink is printed on a flexible substrate to form a comb-shaped silver electrode. Meanwhile, a high-conductivity transmission layer is used, so that the absorption loss of the light is reduced. The dependence of a battery device on an ITO electrode is reduced. A conductive polymer blended solution is dispensed or printed on an active layer, and then a top electrode layer of hole transmission and electrode blending is formed. Or, the silver conductive ink is printed on a second transmission layer and then a comb-shaped silver electrode is formed. The damage of the solvent to the thin film of the active layer is reduced.The yield of the flexible organic solar cell is improved.

An embodiment of the invention provides a quantum dot light-emitting component, a backlight module and a display device, relates to the field of photoelectric devices, and can reduce back scattering light loss and improve light-emitting efficiency of the quantum dot light-emitting component. The quantum dot light-emitting component comprises a support frame, an excitation light source, a refraction layer and a quantum dot layer, wherein the support frame is in a groove shape; the excitation light source is arranged at the bottom of a groove in the support frame, and is used for emitting excitation light; the refraction layer is arranged in the light output direction of the excitation light source, and the refraction layer is made of a light transmitting material; the propagation direction of the excitation light emitted by the excitation light source deflects to the center normal direction of a light output plane of the excitation light source after the excitation light passes through the refraction layer; the quantum dot layer is arranged on the refraction layer, and the quantum dot layer emits light when excited by the excitation light; and the excitation light source, the refraction layer and the quantum dot layer as well as the support frame are packaged together to form an integrated enclosed structure. The embodiment of the invention is used for manufacturing the quantum dot light-emitting component.

The embodiment of the invention discloses a photodiode and a manufacturing method thereof, relating to the field of opto-electrical technology, wherein the photodiode is capable of reducing the energy loss. The photodiode comprises a substrate positioned on a bottom layer, a lower cladding layer boss covering the substrate, an incident wave core guiding layer covering the lower cladding layer boss, an upper cladding layer covering the incident wave core guiding layer, an optical matching layer positioned above the upper cladding layer and an avalanche photodiode positioned above the middle part of the back end of the optical matching layer, wherein the width of the lower cladding layer boss at the tail end in the incident wave direction is wider than that of the beginning end in the incident wave direction, both sides of the lower cladding layer boss at the tail end in the incident wave direction are parallel, and both sides of the lower cladding layer boss at the beginning end in the incident wave direction are parallel; and the optical matching layer comprises an optical matching layer front end and an optical matching layer back end, wherein the optical matching layer front end comprises at least one air seam extended along the incident wave direction, and the optical matching layer front end is divided into characteristic units partitioned by the air seams. The embodiment of the invention is applied to manufacturing the photodiode.

The invention relates to a low-loss deep-ultraviolet multilayer film production method, belongs to the application field of the deep-ultraviolet optical technology, and aims at solving the problems of the deep-ultraviolet optical film in the prior art that an optical film system is large in absorption loss by adopting a total oxide film layer and is large in scattering loss by adopting a total fluoride film layer. The low-loss deep-ultraviolet multilayer film production method includes the following steps: 1 an optical substrate needing film plating is subjected to ultrasonic cleaning, slow pulling and dewatering and N2 drying; 2 an oxide film layer stack is prepared on the optical substrate obtained in the step 1 by aid of the ion assisted electron beam evaporation technology according to a film system structure of the film design; and 3 a fluoride film layer stack is prepared on the oxide film layer stack by aid of the thermal evaporation process. The low-loss deep-ultraviolet multilayer film production method overcomes shortcomings of the loose interior structure and large surface roughness of films in a total fluoride multilayer film system and the shortcoming of large absorption loss of a total oxide multilayer film system caused by acting of middle-and-outer-layer oxide films and laser.

The invention discloses a novel fully passivated contact crystalline silicon solar cell and a preparation method thereof. The novel fully passivated contact crystalline silicon solar cell comprises acrystalline silicon layer, an ultra-thin silicon oxide passivation layer is arranged on the two sides, a mixed phase silicon oxide/nanocrystalline silicon layer is arranged on the front surface, an intrinsic hydrogenated amorphous silicon layer and a p-type hydrogenated amorphous silicon layer are arranged on the reverse surafce, and an ITO layer and an Ag electrode are arranged outside the two sides. The mp-SiOx/nc-Si is applied to replace the poly-Si layer in the SiOx/poly-Si passivation contact structure of the TOPCon cell to act as the front passivation contact of the cell, and the intrinsic hydrogenated amorphous silicon (a-Si: H (i)) and the doped a-Si: H stack layer are used as the reverse passivation contact and the fully passivated contact crystalline silicon solar cell is designed and prepared so that the electrical and optical properties of the front surface of the passivated contact crystalline silicon solar cell can be enhanced.

The polarization beam splitting element splits an entering beam according to polarization directions. The element includes, in order from a beam entrance side, an entrance side multi-layered film layer constituted by laminated multiple dielectric films, and a one-dimensional grating structure having a grating period smaller than a wavelength of the entering beam and formed of a metal. When a medium existing on the beam entrance side further than the entrance side multi-layered film layer is referred to as an entrance medium, the multiple dielectric films constituting the entrance side multi-layered film layer include at least one dielectric film having a higher refractive index than that of the entrance medium and at least one dielectric film having a lower refractive index than that of the entrance medium.

The invention discloses a high-reflectivity deep ultraviolet micro-LED with an inverted structure and a preparation method of the deep ultraviolet micro-LED. P-type ohmic contact metal is etched, thereserved P-type ohmic contact metal is a two-dimensional array composed of a plurality of small pattern units arranged periodically, a micro-grid P-type ohmic contact electrode is formed, Al metal isdeposited on the micro-grid P-type ohmic contact electrode, a reflecting layer is formed to cover a micro-mesa, the Al metal is completely embedded into a gap of the micro-grid P-type ohmic contact electrode, and the inclination angle of the side wall of the micro-mesa is adjusted between 30 degrees and 90 degrees. According to the invention, the micro-grid P-type ohmic contact electrode is adopted, the absorption loss of ultraviolet light in the LED structure is reduced, and the reflection of the ultraviolet light at the electrode is enhanced by the Al metal, so that most of emergent light isemitted from the back surface of the inverted structure, and the light extraction efficiency of the ultraviolet light in the UV LED is greatly improved; and the deep ultraviolet micro-LED is high inflexibility, is compatible with in-plane and vertical-structure inverted micro-LEDs, mini-LEDs and the like, facilitates the improvement of the performance of a device, and achieves the batch production.

A lithography illumination system, along the transmission direction of the laser light, successively comprising a laser light source, a collimating and expanding unit, a pupil shaping unit, a first micro-lens array, a micro-integrator rod array, a micro-scanning slit array, a second micro-lens array, a condenser lens group, a mask, and and a motion control unit for controlling the motion of the micro scanning slit array.

The invention discloses a vertical cavity surface emitting laser and a fabrication method thereof. The laser comprises a semiconductor substrate, a main laser and a seed source laser, wherein the mainlaser comprises a first buffer layer, a first N-side current guide layer, a first active area, a first high-aluminum layer, a first P-type distributed Bragg reflector layer and a first P-side currentguide layer, which are arranged in sequence from bottom to top; the method comprises the following steps: I. growing a semiconductor laser chip; II. fabricating a first oxidation confinement layer; III. fabricating a first current blocking layer, a first N-side electrode and a first P-side electrode; IV. fabricating a second oxidation confinement layer; V. fabricating a second current blocking layer, a second N-side electrode and a second P-side electrode. The vertical cavity surface emitting laser has the advantages of simple structure, reasonable design and small size, improving the beam quality of a high-power laser beam output by a main laser through a seed source laser, and being able to compress the laser line width, and achieving high practicability.