44results about How to "Improve the exit rate" patented technology

The invention relates to a novel LED die bonding method which comprises the steps: firstly, coating a thin layer of die bonding glue on a bottom die bonding surface of a LED crystal particle fixing concave pit with a reflection layer on a metal base; after completion, placing the LED crystal particles at a base die bonding surface dispensed with die bonding glue, compacting and completing primary die bonding, then welding gold thread, coating fluorescent powder, and finally encapsulating by silica gel so as to wholly wrap LED crystal particles in the silica gel, thus completing final die bonding. The traditional LED carry out die bonding by the die bonding glue, while in the invention, only a thin layer of die bonding glue is coated for playing a role of primary die bonding, and finally the die bonding protection is carried out by encapsulating the silica gel. The method does not influence LED solid luminescence, and the light emitted from the periphery thereof is reflected out by the fixing concave pit, thus improving light extraction efficiency.

The invention discloses a backlight source structure and a working method thereof. Emergent blue light can be mixed with long-wavelength yellow light obtained by the transformation of the blue light in the excitation of fluorescent powder to obtain required white light by adopting a rational fluorescent powder proportion and distributing fluorescent powder dots on a light guide plate according to proper rules. Compared with the conventional method in which white-light light emitting diodes (LED) form a light source, the method is convenient to operate, reduces the cost of the light source, reduces optical loss, increases the exitance of the light, can further reduce the power of a backlight source and has great significance in energy saving popularization.

The invention discloses a producing method for a graphical sapphire substrate. A flat substrate is provided; a mask layer is formed on the surface; a graphical mask layer is produced on the surface of the mask layer by utilizing a photolithography; a graph is formed on the surface of the substrate by adopting a wet process corrosion or dry process etching technology by utilizing the graphical mask layer; the mask layer is removed; an insulating medium film is formed on the surface of the graphical substrate; the insulating medium film in the clearance of the graphical substrate is protected by utilizing the photolithography; the insulating medium film out of the photolithography protection is removed by adopting the wet process corrosion or dry process etching technology. According to the invention, epitaxy cannot grow on the surface of the insulating medium film; the epitaxial growth in the vertical direction is avoided; lateral epitaxial growth is increased; the dislocation density in a glowing area is reduced; the insulating medium film with certain film thickness is adopted to fill the clearance of the graphical substrate; the depth of the clearance is reduced; epitaxial growth cycle is reduced.

The invention discloses a novel scintillation detector with high photon transmission efficiency. The novel scintillation detector has the principle that when rays enters a crystal, secondary electronsare generated near the surface of the incidence end of the crystal (3), and fluorescence is generated; a part of fluorescence photons can be absorbed and consumed by the crystal and can escape to a position outside the crystal. The light path is reduced in a lateral window opening emitting mode; the photon collection is more facilitated. The escaped photon returns into the crystal (3) through thereflection by a reflecting layer; the generated photons pass through an antireflection film (5), a coupling agent (11), an optical glass convex lens (13) and a light guide cavity (12) to enter an optical cathode (9) of an electronics system (22) for generating photoelectrons; the photoelectrons are amplified and shaped by the subsequent electronic element to from a pulse signal; the event is finally recorded as a radiation event.

The invention discloses a double-sided electroluminescent display panel and a display device. The display panel comprises a first absorption polarization structure arranged on a first light-emitting face of a transparent EL structure, and a first reflection polarization structure arranged on a second light-emitting face of an EL structure, wherein the homology axis of the first absorption polarization structure and the homology axis of the first reflection polarization structure are perpendicular to each other, the first absorption polarization structure is used for absorbing light of a first wave component and transmitting light of a second wave component, and the first reflection polarization structure is used for transmitting light of the first wave component and reflecting light of the second wave component. Through the common effect of the first absorption polarization structure and the first reflection polarization structure, the intensity of environment light can be weakened when the high emission ratio of self-illumination is ensured, the contrast ratio of the double-sided display panel is increased, the influences of environment light on the double-sided display panel are reduced, and the problem that an existing double-sided display panel is low in contrast ratio due to the transparent EL structure is solved.

The invention relates to the field of display technology, in particular to a light guide structure, an OLED (Organic Light-Emitting Diode) display component and a display device. The light guide structure comprises a first medium layer and a second medium layer which have different dielectric constants; metal nanoparticles for enhancing the light guide effect are arranged between the interfaces of the first medium layer and the second medium layer. The light guide structure, the OLED display component and the display device which are provided by the invention have the advantage that because the metal nanoparticles are arranged between the two light guide layers, the luminous exitance can be increased to the max.

The invention provides a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of light emitting diodes. An insertion layer is added between a p-type GaN layer and a p-type contact layer, and the insertion layer comprises an Mg quantum dot layer and a first GaN layer which are sequentially stacked on the p-type GaN layer. The Mg quantum dot layercomprises a plurality of Mg quantum dots distributed on the p-type GaN layer, the interfaces between the plurality of Mg quantum dots and the p-type GaN layer and between the plurality of Mg quantumdots and the first GaN layer are rough, diffuse reflection of light rays at the interface of the p-type GaN layer can be increased, total reflection of the light rays possibly occurring at the interface of the p-type GaN layer is reduced, and therefore the light emitting rate is improved. The first GaN layer can cover the rough surface of the Mg quantum dot layer, and the quality of the p-type contact layer growing on the first GaN layer is ensured. The light extraction rate of the finally obtained light-emitting diode epitaxial wafer can be improved.

The invention discloses an LED graphic optimized packaging substrate provided with inverted conical groove patterns. The radius of the bottoms of the inverted conical grooves ranges from 0.3 to 1mm, the incline angle of the inverted conical grooves ranges from 45 to 75 degrees, and the distance between the centers of the inverted conical grooves ranges from 0.5 to 1mm; a silver layer is planted on the horizontal surface and the surfaces of the inverted conical grooves of the packaging substrate. The invention further discloses an LED packaging member with the graphic optimized packaging substrate and a manufacture method thereof. Compared with the prior art, the substrate has the advantages that the direct emitting opportunity is provided for fully reflected light, and the light emitting efficiency is improved by 13.5% around.

The invention relates to a deep ultraviolet LED with high external quantum efficiency and a production method thereof. The deep ultraviolet LED comprises a patterned sapphire substrate, the upper surface and the lower surface of the patterned sapphire substrate are respectively provided with a micro-dome-shaped structure arranged in a regular hexagonal array shape, the upper surface of the patterned sapphire substrate is provided with an epitaxial lamination layer, the epitaxial lamination layer is provided with an mesa step exposing an n-AlGaN layer, and a nano-particle array of an Al-SiO2 core-shell structure is arranged on the side, close to the multiple quantum wells in the epitaxial laminated layer, of the surface of the n-AlGaN layer. By using the micro-dome type patterned sapphire substrate which is symmetrical up and down, the light emitting probability can be improved, the light extraction efficiency can be increased, the defect density of the AlGaN epitaxial layer can be reduced, the non-radiative recombination can be decreased, and the internal quantum efficiency can be improved; and the nano-particle array resonates with photons emitted by an LED through the local surface plasmon resonance effect of Al nanoparticles so that the field intensity near a quantum well is enhanced, and the internal quantum efficiency is improved.

The invention discloses an organic electroluminescent displayer and a manufacturing method thereof and belongs to the technical field of displayer manufacturing. The organic electroluminescent displayer comprises a PS microsphere layer embedded in one side of a PDMS layer; a substrate, a plurality of parallel positive electrode units, an organic light emitting layer and a plurality of parallel negative electrode units are sequentially arranged on the other side of the PDMS layer; the positive electrode units and the negative electrode units are parallel and staggered; the organic light emitting layer is provided with a first refraction layer, the negative electrode units are provided with second refraction layers, and the refractive index of the first refraction layer is larger than that of the second first refraction layers. By means of the organic electroluminescent displayer and the manufacturing method thereof, light emitting efficiency of the organic electroluminescent displayer can be improved, double-side light emission is achieved, and color mixing between pixels is prevented.

The invention relates to a self-indicating patch semiconductor laser and a packaging method thereof. The self-indicating patch semiconductor laser comprises a tube socket and a tube cap arranged on the tube socket, and in a space formed by the tube socket and the tube cap, a COS, a 45-degree right-angle semi-reflection table, a crystal and a 45-degree right-angle total reflection table are sequentially arranged on the tube socket along an optical path; two 45-degree reflective modules are arranged on the tube socket; the first 45-degree light reflection module (45-degree right-angle half-reflection table) reflects 50% of laser, so that a light path is changed by 90 degrees, the laser is emitted in a direction vertical to the tube socket, 50% of laser can also pass through the lens, a crystal is arranged on the light path, a 808nm laser is pumped into a 1064nm laser, then the 532nm laser green laser is generated through a frequency doubling crystal, and after the green laser passes through a second 45-degree reflection module (45-degree right-angle total reflection table), the light path is changed by 90 degrees and is emitted out perpendicular to the tube base.