Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The disclosure provides a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of light-emitting diodes. An insertion layer is added between the p-type GaN layer and the p-type contact layer, and the insertion layer includes a Mg quantum dot layer and a first GaN layer sequentially stacked on the p-type GaN layer. The Mg quantum dot layer includes a plurality of Mg quantum dots distributed on the p-type GaN layer. The interface between the multiple Mg quantum dots and the p-type GaN layer and the first GaN layer will be relatively rough, which can increase the light transmission rate in the p-type GaN layer. The diffuse reflection at the interface of the GaN layer reduces the total reflection of light that may occur at the interface of the p-type GaN layer, thereby increasing the light output rate. The first GaN layer can cover the relatively rough surface of the Mg quantum dot layer to ensure the quality of the p-type contact layer grown on the first GaN layer. The light extraction rate of the finally obtained light emitting diode epitaxial wafer can be improved.

Description

technical field [0001] The disclosure relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light-emitting diodes are widely used light-emitting devices, often used in traffic lights, car interior and exterior lights, urban lighting and landscape lighting, etc., and light-emitting diode epitaxial wafers are the basic structure used to prepare light-emitting diodes. The light emitting diode epitaxial wafer at least includes a substrate and an n-type GaN layer, an active layer, a p-type GaN layer and a p-type contact layer sequentially stacked on the substrate. [0003] In the related art, the p-type GaN layer in the light-emitting diode epitaxial wafer is a semiconductor material used to provide holes, and the p-type GaN layer is usually set thicker to ensure that the p-type GaN layer has better crystal quality and can provide Plenty of holes. However, ...

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Problems solved by technology

However, when the light emitted from the active layer passes through the p-type GaN layer with a large thickness, it will be absorbed and reflected by the p-type GaN layer, resulting in the light emission rate of the light-emitting diode is still not high enough.

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