Micron forward-installed LED device for inhibiting SRH non-radiative recombination and preparation method and application of micron forward-installed LED device

A LED device, non-radiative technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of affecting device performance, reducing the external quantum efficiency of devices, SRH recombination and leakage current increase, etc., to increase the output probability, Effect of Improving External Quantum Efficiency

Pending Publication Date: 2022-07-12
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When the size of the LED chip is reduced to the micron level, the ratio of its specific surface area (sidewall area / volume) will gradually increase, so that the overall influence of the sidewall dangling bonds will increase, and in the process of chip preparation, the etching process will be Damage to the sidewall of the chip makes Micro-LEDs face more serious surface defects, which ultimately reduces the external quantum efficiency (EQE) of the device
At the same time, sidewall defects are prone to generate leakage channels, making the carriers in the device easy to diffuse in the direction of the edge, so that SRH recombination and leakage current increase, affecting the performance of the device

Method used

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  • Micron forward-installed LED device for inhibiting SRH non-radiative recombination and preparation method and application of micron forward-installed LED device
  • Micron forward-installed LED device for inhibiting SRH non-radiative recombination and preparation method and application of micron forward-installed LED device
  • Micron forward-installed LED device for inhibiting SRH non-radiative recombination and preparation method and application of micron forward-installed LED device

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Experimental program
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Effect test

Embodiment 1

[0067] In this embodiment, a micron-sized front-mounted LED device that suppresses SRH non-radiative recombination is prepared, and the specific process is as follows:

[0068] A1. Select a 2-inch epitaxial wafer. The substrate of the epitaxial wafer is a sapphire structure with a thickness of 300 μm. The substrate is arranged with a 3.5 μm undoped GaN buffer layer, a 2.5 μm N-type GaN layer, and a 166.5 nm multi-quantum Well layer, 20nm P-type electron blocking layer and 300nm P-type GaN layer. ITO was evaporated on the GaN-based epitaxial layer using electron beam evaporation coating technology. The thickness of ITO was 100nm. It was evaporated in two steps. The first evaporation thickness was 16.7nm without oxygen doping. nm, and the oxygen flow rate was 2sccm. Then, the rapid thermal annealing technique is used for annealing treatment, that is, in the pure nitrogen environment, 200 sccm of nitrogen and 35 sccm of oxygen are continuously fed, and the annealing treatment is...

Embodiment 2

[0075] In this example, a micron-sized front-mounted LED device that suppresses SRH non-radiative recombination is prepared, and the specific process is as follows:

[0076] B1. Select a 2-inch epitaxial wafer. The substrate of the epitaxial wafer is a sapphire structure with a thickness of 300 μm. The substrate is arranged with a 3.5 μm undoped GaN buffer layer, a 2.5 μm N-type GaN layer, and a 166.5 nm multi-quantum Well layer, 20nm P-type electron blocking layer and 300nm P-type GaN layer. A photoresist mask layer is formed with a mask with a micro-hole array structure combined with ordinary ultraviolet lithography technology, and then the micro-hole array structure is transferred to the GaN-based epitaxial layer by ICP etching technology, and the micro-hole depth is etched to The lower surface of the AlGaN electron blocking layer 11, after which the photoresist is removed using acetone and a stripper solution, such as Figure 8 shown;

[0077]B2. Evaporate ITO on the GaN...

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Abstract

According to the micron normally-installed LED device for inhibiting SRH non-radiative recombination and the preparation method and application of the micron normally-installed LED device, a micron hole array is prepared on a micro-size device, an N-type material is injected, the effect of the micron hole array is to form a circle of high-resistance area on the edge of a P-type semiconductor material transmission layer, and therefore current is limited to be expanded to an area with many side wall defects on the edge of the device. And when the carriers are diffused to the edge, SRH recombination can be caused due to the existence of etching defects, so that the SRH recombination of the carriers can be fundamentally reduced, and the external quantum efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of Micro-LED devices for display, and in particular relates to a micro-front-mounted LED device for suppressing non-radiative recombination of SRH, and a preparation method and application thereof. Background technique [0002] With the development of the information age, display technology has become a key link in realizing information interaction. Micro-LED has become the focus of many companies and researchers due to its advantages of self-luminescence, high integration, high efficiency, high stability and low power consumption. Compared with liquid crystal display (LCD) and organic light-emitting diode (OLED), Micro-LED can have more obvious display advantages. [0003] When the size of the LED chip is reduced to the micron level, the ratio of its specific surface area (sidewall area / volume) will gradually increase, so that the overall influence of the sidewall dangling bonds will increase, and in the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/24H01L33/06H01L33/14H01L33/00
CPCH01L33/0075H01L33/24H01L33/06H01L33/145
Inventor 耿魁伟徐香琴刘玉荣姚若河
Owner SOUTH CHINA UNIV OF TECH
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