7results about How to "Improve external quantum efficiency" patented technology

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

This invention provides materials for photoelectric conversion elements, which facilitate the fabrication of photoelectric conversion elements with low dark current, high external quantum efficiency, and excellent responsiveness. This invention uses photoelectric conversion element materials containing a fused-ring compound represented by the following formula (1). In formula (1), ring A represents the structure represented by the following formula (2); R 1 ~R 8 Each of the following groups independently represents a hydrogen atom, an alkyl group with 1 to 18 carbon atoms (with or without substitution), an alkenyl group with 1 to 18 carbon atoms, a cycloalkyl group with 1 to 18 carbon atoms, a bicycloalkyl group with 1 to 18 carbon atoms, a tricycloalkyl group with 1 to 20 carbon atoms, an aromatic hydrocarbon group with 6 to 30 carbon atoms (with or without substitution), a heteroaryl group with 3 to 30 carbon atoms (with or without substitution), or -NR. 21 R 22 OR 23 .

This application belongs to the field of display technology and relates to a composite thin film, a light-emitting device, and a display apparatus. The composite thin film includes a first film layer, a barrier layer, and a second film layer sequentially stacked. The first film layer is made of a metal oxide, the second film layer is made of a p-type doped material, and the barrier layer is made of a polymer. The light-emitting device of this application has a composite film layer, and the composite film layer has a highly dense barrier layer, which can improve the external quantum efficiency and lifespan of the light-emitting device.

This invention proposes a simple and easy-to-operate method for preparing core-shell quantum dots that suppress Auger recombination, and develops Mn-doped CsPbCl3@Cs4PbCl6 core-shell nanocrystals. The Auger suppression performance was studied using wavefunction engineering. The method includes the following steps: ① Synthesizing CsPbCl3 nanocrystals via thermal injection. ② Forming a Cs4PbCl6 shell nanocrystal on the CsPbCl3 nanocrystals. An oleic acid solution containing Cs is added to the CsPbCl3 nanocrystals; Cs ions tend to react with free Pb ions, and the Cs4PbCl6 shell nanocrystals grow epitaxially on the surface of the CsPbCl3 core nanocrystals. ③ Injecting a MnCl2 precursor into the pre-synthesized core-shell nanostructure at room temperature yields highly efficient Mn-emitting nanocrystals with promising applications in optoelectronics, generating significant social and economic benefits.

The present application relates to the technical field of chip manufacturing, in particular to a high-speed photoelectric detector and a manufacturing method thereof, the antireflection film prepared based on the spraying process of the polymer has good antireflection effect on the communication waveband light signal, the external quantum efficiency of the photoelectric detector is increased, and the antireflection effect on the light signal is improved; meanwhile, the antireflection film prepared based on the spraying process of the polymer has good interface contact, the polymer releases thermal stress due to the periodic distribution of nano-pores when the temperature changes, the temperature influence on the photoelectric detector is reduced, and no defects are generated on the surface of the photoelectric detector, the influence of the degradation of the photoelectric detector is avoided, and the high-speed response characteristics of the photoelectric detector are ensured.

This invention provides a triarylboron-modified fluorescent material, its preparation method, and its applications. The triarylboron-modified fluorescent material is as shown in Compound I. The compound of this invention utilizes the electron-withdrawing ability and high steric hindrance of triarylboron to effectively accelerate the antisystem crossing rate of narrow-band luminescent materials, reducing intermolecular interactions, thereby improving quantum efficiency and suppressing the efficiency roll-off problem of organic electroluminescent devices. Furthermore, due to the typical electron-donating characteristics, strong resonance effect, and rigid molecular structure of this type of molecule, the emission spectrum becomes narrower, thus achieving very high purity green light emission.

This invention relates to the field of organic electroluminescent materials, specifically to an iridium metal complex, and more particularly to an iridium metal complex for deep red-near-infrared emission and its applications, as well as organic electroluminescent devices using the iridium metal complex of this invention. The iridium metal complex of this invention has the structure shown in formula (1). OLED devices prepared using the iridium metal complex of this invention exhibit higher luminous efficiency and better lifespan, demonstrating promising application prospects.