106results about How to "Improve external quantum efficiency" patented technology

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer. The buffer layer sequentially comprises a first AlN layer, a second AlN layer, a third AlN layer, a first superlattice layer, a first AlGaN layer, a second superlattice layer and a first GaN layer; the first superlattice layer comprises a fourth AlN layer and a second AlGaN layer which are alternately stacked, and the second superlattice layer comprises a third AlGaN layer and a second GaN layer which are alternately stacked; a first V-shaped pit extending to the second superlattice layer is formed in the third AlN layer, a second V-shaped pit is formed in the first superlattice layer, and the second V-shaped pit is filled and leveled up by the first AlGaN layer; the second superlattice layer forms a third V-shaped pit, and the first V-shaped pit and the third V-shaped pit are filled and leveled up by the first GaN layer. By implementing the invention, the luminous efficiency can be improved.

The invention belongs to the technical field of organic electroluminescent materials, and relates to a boron-containing seven-membered fused ring compound and application thereof. According to the boron-containing seven-membered fused ring compound provided by the invention, a double-naphthalene ring and a boron atom form a seven-membered ring, the seven-membered ring and an N or O atom form a ring at an adjacent position to form a large-conjugate rigid plane structure, an electron donating or electron withdrawing group is introduced at a specific position for modification, the distorted conformation at the periphery of a molecule is adjusted, and the compound has a large-conjugate rigid structure. According to the present invention, the organic light-emitting diode compound inhibits the close packing generated due to the pi-pi effect among molecules, obtains the high external quantum efficiency, has characteristics of high decomposition temperature, suitable energy level and color coordinate, and good color purity, can be used as the blue light doping in the organic light-emitting device, and can be used for the organic light-emitting device, such that the organic light-emitting device can be used for the organic light-emitting device. And the device performance of the organic light-emitting device can be obviously improved.

The invention relates to a dimer non-fullerene acceptor molecule based on a pyrone-ring lock structure, preparation of the dimer non-fullerene acceptor molecule and application of the dimer non-fullerene acceptor molecule as an acceptor photovoltaic material, and belongs to the technical field of organic solar cell materials. An A-D-A '-D-A type dimer non-fullerene acceptor molecule is designed and synthesized based on a pyrone structure, A is an electron withdrawing unit, D is an electron donating unit, and A' is an electron withdrawing unit based on the pyrone structure. The dimer molecule has a structural general formula I shown in the specification. Wherein EG is selected from conjugated groups with electron withdrawing capability, Ar is selected from conjugated groups with electron donating capability, and X is selected from hydrogen atoms or halogen. The dimer acceptor molecule shows a small dihedral angle, which is beneficial to accumulation between molecules, so that the material has high carrier mobility. The dimer acceptor molecule with the pyrone structure shows obviously improved stability under illumination and attack of a nucleophilic reagent, and the organic solar cell device shows good photoelectric conversion efficiency.

The invention discloses an organic electroluminescent material and a device thereof. The organic electroluminescent material is a compound with a structure as shown in a formula 1. The novel compounds can be used as luminescent materials in organic electroluminescent devices, and can provide better device performance, such as narrower half-peak width, higher current efficiency and external quantum efficiency. The invention further discloses an organic electroluminescent device containing the compound with the structure shown in the formula 1 and a compound composition.

The invention discloses a multiplication type organic photoelectric detector based on a hole barrier layer. The detector comprises a cathode, an anode, a photosensitive layer arranged between the cathode and the anode, the hole barrier layer arranged between the anode and the photosensitive layer, and an electron transport layer arranged between the cathode and the photosensitive layer. Wherein the photosensitive layer comprises at least one donor material; the donor material with the lowest HOMO energy level in the photosensitive layer and the hole blocking layer meet the following relation: Hmin-HP is greater than or equal to 0.5 eV; the donor material with the highest HOMO energy level in the photosensitive layer and the hole blocking layer meet the following relation: LP-Hmax is greater than or equal to 2.0 eV; wherein Hmin represents the HOMO energy level of the donor material with the lowest HOMO energy level in the photosensitive layer, HP represents the HOMO energy level of the hole blocking layer, Hmax represents the HOMO energy level of the donor material with the highest HOMO energy level in the photosensitive layer, and LP represents the LUMO energy level of the hole blocking layer.

The invention provides an organic compound and application thereof, and an organic electroluminescent device comprising the same, the organic compound has a structure as shown in a formula (I), through the design of a molecular structure, the organic compound has good TADF characteristics, meanwhile, the carrier transport performance and stability are remarkably improved, and the organic compound is endowed with excellent photoelectric properties. The organic compound is used for a light-emitting layer of an organic electroluminescent device, so that the device has higher light-emitting efficiency and excellent color purity, the external quantum efficiency is improved, and the driving voltage is reduced. # imgabs0 #

The invention belongs to the technical field of organic photoelectric materials, and particularly relates to preparation and application of an indolo-indole quinoxaline phenazine MR-TADF blue light material. The material has a rigid large-plane skeleton and is modified by a plurality of chemical sites, and efficient and narrow-spectrum blue light emission of the material can be realized by simply regulating and controlling a peripheral hooking group. The blue-light-doped electroluminescent device prepared by the method has the advantages that the blue-light-doped electroluminescent device prepared by the aid of the method has the advantages that the blue-light-doped electroluminescent device prepared by the aid of the method is high in light emitting efficiency, the thermal decomposition temperature can reach 426.1 DEG C, the blue-light-doped electroluminescent device is excellent in thermal stability, the maximum photoluminescence emission peak in methylbenzene solution is 458 nm, the half-peak width of the blue-light-doped electroluminescent device is 40 nm, the fluorescence quantum efficiency of the blue-light-doped electroluminescent device is 78.2%, the maximum emission peak of the obtained blue-light-doped electroluminescent device is 468 nm, color coordinates of the blue-light-doped electroluminescent device are (0.15 and 0.25), and the corresponding maximum external quantum efficiency The MR-TADF blue light-emitting material with an innovative structure and multiple expandability has an attractive application prospect. # imgabs0 #

The invention provides a reversed-polarity LED structure, and relates to the technical field of semiconductor devices. The reversed-polarity LED structure comprises an epitaxial structure, the epitaxial structure comprises an N-type limiting layer, an active layer, a P-type limiting layer and a P-type GaP window layer which are sequentially stacked in the growth direction, and the P-type GaP window layer comprises a P-type base layer located on the P-type limiting layer and a P-type pattern surface layer located on the side, away from the P-type limiting layer, of the P-type base layer; and the ITO contact layer is positioned on one side, deviating from the P-type limiting layer, of the P-type pattern surface layer. The ITO contact layer and the P-type pattern surface layer are combined to serve as the P-face ohmic contact structure of the LED structure, the reliability of the P-face ohmic contact structure can be improved, and the light absorption condition of the P-face ohmic contact structure can be effectively reduced. And moreover, the alloying time and the alloying temperature required when the ITO contact layer and the P-type pattern surface layer form the P-surface ohmic contact structure are relatively low, so that the difficulty of the preparation process of the reversed-polarity LED structure is reduced.

A light detection element with reduced dark current and improved external quantum efficiency. The light detection element comprises: an anode; a cathode; and an active layer disposed between the anode and the cathode and comprising a p-type semiconductor material and an n-type semiconductor material, wherein the thickness of the active layer is greater than 800 nm, and the value obtained by subtracting the absolute value of the LUMO of the n-type semiconductor material from the work function of the surface in contact with the cathode side surface of the active layer is 0.0 to 0.5 eV. In addition, the above-mentioned n-type semiconductor material has an absolute value of the LUMO of 2.0 eV to 10.0 eV.

The present application discloses a WS based on rare earth ion co-doping technology. 2 (Er 3+ +Yb 3+ ) / WSe 2 (Er 3+ +Yb 3+ ) optical detector, involving two-dimensional material rare earth ion co-doping technology and two-dimensional material micro-area fixed-point transfer technology, using the micro-area fixed-point transfer method to transfer WS synthesized by chemical vapor deposition 2 (Er 3+ +Yb 3+ ) layer was successfully transferred to WSe 2 (Er 3+ +Yb 3+ ) surface, and WS 2 (Er+Yb) / WSe 2 (Er+Yb)vdW heterojunction; the surface is successively spin-coated with LOR photoresist and S1805 photoresist, and soft-baked respectively, to obtain sample 1, and laser direct writing is performed on the selected area of ​​the sample 2, and the deteriorated photoresist is removed by developer, and sample 3 is obtained after cleaning, and sample 3 is plated with chromium and gold by magnetron sputtering technology to obtain sample 4, sample 4 is immersed in acetone to dissolve the photoresist, and the excess metal layer is peeled off under a microscope to obtain a van der Waals heterojunction electrode device. Therefore, the present application provides a WS based on rare earth ion co-doping technology 2 (Er 3+ +Yb 3+ ) / WSe 2 (Er 3+ +Yb 3+ ) photodetector, increasing the rare earth doping concentration of the two-dimensional material and obtaining excellent WS 2 (Er 3+ +Yb 3+ ) and WSe 2 (Er 3+ +Yb 3+ ) Photoelectric properties of two-dimensional semiconductor materials.

The present invention provides a blue light material containing anthracene and benzimidazole, and a preparation method and application thereof, belonging to the technical field of organic photoelectric materials. Anthracene and its derivatives have good film-forming properties, stability and appropriate carrier transport characteristics, and at the same time have good photoelectric properties. Benzimidazole has good electron transport properties. The present invention combines anthracene and benzimidazole to obtain a bipolar blue light material and solve the stability problem of the blue light material. The present invention uses benzophenone to separate the anthracene and benzimidazole groups, which can block the conjugation of the material, thereby maintaining the color purity of the blue light material, enhancing the luminous efficiency and photoelectric properties of the material. The obtained blue light material containing anthracene and benzimidazole has good thermal stability, high luminous efficiency, and high luminous color purity, and can be used to produce organic electroluminescent devices, organic solar cells, organic thin film transistors, organic photodetectors, organic field effect transistors, organic integrated circuits or organic photoreceptors.

The invention provides an organic compound taking an anthrone-like derivative as a core, a preparation method and application of the organic compound, and application of an organic electroluminescent device, and relates to the field of semiconductors. Due to the pi-pi conjugation effect of the organic compound, the organic compound has very strong electron transmission capability and high electron transmission rate, so that the initial voltage of a device can be reduced, and the efficiency of the organic electroluminescent device can be improved; the group rigidity in the organic compound is relatively strong, and the anthrone group where Z is located increases the asymmetry of molecules, so that the molecules of the organic compound are not easy to crystallize and aggregate, and the organic compound has good film-forming property, high glass transition temperature and thermal stability, and therefore, when the organic compound is applied to an OLED device, the film layer stability can be maintained, and the organic compound can be applied to the OLED device. And the service life of the OLED device is prolonged.

The invention discloses a germanium-containing organic compound, a germanium-containing exciplex and application of the germanium-containing organic compound and the germanium-containing exciplex, and relates to the technical field of organic electroluminescent materials. The germanium-containing organic compound is a compound as shown in a general formula A; the germanium-containing exciplex is composed of a first main body material and a second main body material, the first main body material and the second main body material are both selected from a compound shown in a general formula A and / or a compound shown in a general formula B, at least one material is a germanium-containing organic compound, the first main body material contains a substituted or unsubstituted hole transport type group, and the second main body material contains a substituted or unsubstituted electron transport type group. The germanium-containing exciplex has excellent carrier transport capacity due to the fact that the germanium-containing exciplex contains the germanium with the metalloid property and has the beneficial effect of balancing hole and electron transport capacity, meanwhile, the heavy atom effect of germanium atoms can promote reverse intersystem crossing of a main body material, the effective utilization rate of exciton energy is increased, and therefore the germanium-containing exciplex can be applied to the field of organic light emitting devices. According to the invention, the luminous efficiency and the efficiency roll-off of the organic electroluminescent element can be more effectively improved.

The invention discloses an organic electroluminescent material and a device thereof. The organic electroluminescent material is a compound with a structure as shown in a formula 1. The novel compounds have dark blue luminescence, can be used as luminescent materials in organic electroluminescent devices, and can provide better device performance, such as high external quantum efficiency and high current efficiency. The invention further discloses an organic electroluminescent device containing the compound with the structure shown in the formula 1 and a compound composition.

According to the field effect transistor based on component and gate voltage combined regulation and control and the preparation method thereof, a silicon dioxide layer is arranged on an intrinsic low-resistance silicon substrate, a source metal electrode and a drain metal electrode are arranged on the silicon dioxide layer, the source metal electrode and the drain metal electrode are metal composite electrodes and comprise a chromium electrode and a gold electrode, the bottom layer filled with channels of the source electrode and the drain electrode is a bismuth-selenium-oxygen nanosheet, and the bottom layer filled with the bismuth-selenium-oxygen nanosheet is a bismuth-selenium-oxygen nanosheet. A black arsenic-phosphorus nanosheet and a top gate bismuth-selenium-oxygen nanosheet dielectric layer are arranged on the bismuth-selenium-oxygen nanosheet, and the source electrode, the drain electrode and the gate electrode are connected with corresponding lead electrodes and are used for being connected with an external test circuit. According to the field effect transistor based on combined regulation and control of the components and the gate voltage and the preparation method of the field effect transistor, through packaging of the bismuth-selenium-oxygen nanosheets, the components of black arsenic and phosphorus and the gate voltage of the top gate are adjusted, so that the photoelectric performance of the device in the visible light, near-infrared and medium-wave infrared ranges is optimized.

The invention is applicable to the technical field of luminescent devices, and provides a preparation method of a red light electroluminescent device based on metal nanoclusters, which comprises the following steps: dissolving thiophane gold and 4 '-ethynylbenzo 15-crown-5 in a dichloromethane solution; dropwise adding a triethylamine solution, volatilizing the solvent, and re-dissolving with a dichloromethane solution to obtain an orange red solution; sealing, carrying out diffusion crystallization, and collecting orange red needle-like crystals; dissolving the orange red acicular crystal and Cu (NCMe) 4PF6 in a dichloromethane solution to obtain a transparent red solution; sealing, carrying out diffusion crystallization, and collecting red needle-like crystals; dissolving the red acicular crystal in a dichloromethane solution containing TCTA and OXD-7 to obtain a subject-object mixed solution; and preliminarily preparing the cluster red light electroluminescent device modified by the subject, the object and the insulating layer: transferring the product into a vacuum cavity, and sequentially depositing an ultrathin LiF layer, a PO-T2T layer, a LiF layer and an Al layer. According to the red light electroluminescent device, the brightness is obviously improved, the external quantum efficiency is high, and the device stability is good.

The present invention discloses a blue light-emitting composition and an organic electroluminescent device and a display device containing the same. The blue light-emitting composition includes a compound with a general structural formula as shown in Formula I, and a compound with a general structural formula as shown in Formula II. The present invention introduces a fluorene or heterofluorene fragment, especially a dibenzofuran fragment, into both the host and guest materials, which can improve the electron transport properties of the host and guest materials, and the fragment on the guest material has a cycloalkyl structure, which increases the distance between the host and the guest, thereby reducing concentration quenching, and the cycloalkyl structure increases the steric hindrance during the aggregation process of the host and guest materials in the film, which is beneficial to limit the free rotation of the single bonds connecting the fragments on the host and guest materials to a certain extent, which is beneficial to reduce the non-radiative transition of solid molecules in the film, increase the radiation probability of the composite exciton, and can significantly improve the performance of the organic electroluminescent device in terms of driving voltage, external quantum efficiency and life. I, II

The invention relates to a preparation method of a metal cluster-based infrared electroluminescent device, and belongs to the field of electronic device manufacturing. The preparation method comprises the following steps: taking methylbenzene containing Me2SAuCl, adding 4-tBuPhC = CH and Et3N, stirring, adding Cu (MeCN) 4BF4 powder, adding an ethanol solution of new BH3.tBuNH2, reacting, stirring and rotationally evaporating the mixture to obtain a solid, dissolving the solid in a mixture of dichloromethane and methylbenzene, centrifuging, filtering precipitate, collecting filtrate, standing and crystallizing to obtain dark red blocky crystal Au16Cu6, and then adding a main body material composed of mCP and PO-T2T, and preparing through a spin coating and evaporation process. The method has the advantages that the metal nanocluster Au16Cu6 and the host materials mCP and PO-T2T are utilized to construct a host-guest material system for preparing the metal cluster infrared LED, and the introduction of the host materials improves the electrical parameters of the device and ensures the smoothness of the cluster film.

This invention relates to an organic electroluminescent element, a display device, a lighting device, and an anthracene compound, comprising a pair of electrodes and a light-emitting layer, wherein the pair of electrodes includes an anode and a cathode, the light-emitting layer is disposed between the pair of electrodes, and the light-emitting layer comprises an anthracene compound represented by the following formula (1) as the host material, and a polycyclic aromatic compound or polymer thereof represented by the following formula (2) as the dopant material (in formula (1), Ar...). c For aryl, etc., R c For hydrogen, etc., Ar 11 ~Ar 18 Any two of them are aryl, etc., and the others are hydrogen, etc., at least one hydrogen in formula (1) can be substituted by deuterium, etc., in formula (2), ring A, ring B and ring C are substituted aryl rings, etc., X 1 and X 2 For example, >O, >N-R (R is aryl, etc.).

The invention discloses an epitaxial structure, a preparation method thereof and a light-emitting diode, and belongs to the technical field of semiconductors. The epitaxial structure comprises a substrate, a light-emitting layer formed on the substrate, an N-type current expansion layer and a P-type current expansion layer which are formed on the two sides of the light-emitting layer, and an electron blocking layer formed between the light-emitting layer and the P-type current expansion layer. Wherein the light-emitting layer comprises at least one pair of quantum well layer In < x > Ga < 1-x > N and quantum barrier layer In < y > Ga < 1-y > N, and y < lt > is greater than or equal to 0; x < 1. The material components of the quantum well layer InxGa1-xN and the quantum barrier layer InyGa1-yN both comprise indium, gallium and nitrogen, so that lattice mismatch is reduced, compression stress caused by lattice mismatch is reduced, the piezoelectric polarization effect is weakened, meanwhile, the recombination efficiency of current carriers is improved, the external quantum efficiency is improved, and the performance of the light emitting diode is improved.

This invention relates to luminescent materials, specifically to a red-light perovskite luminescent material, its preparation method, and a light-emitting diode device. The red-light perovskite luminescent material comprises an iodine-based perovskite, wherein the iodine-based perovskite includes at least two spacer cations, and the iodine-based perovskite comprises a structure with the structural formula NMA. x PPA y Cs w Pb m I i The compound, of which 0.08

Disclosed are aromatic amine derivative organic electroluminescent materials and devices thereof. The compound is a pyrene compound substituted with an aromatic amine, wherein substituents are introduced into the N-ortho positions of both aryl groups of the aromatic amine of the compound, and a (hetero)aryl group is introduced into the N-para position of one of the aryl groups, and a substituent is introduced into the N-meta position of the other aryl group. The compound can be used as a luminescent material in an organic electroluminescent device. These novel compounds can provide better device performance, such as device life and external quantum efficiency. Also disclosed is an electroluminescent device and a compound formula.

The present invention relates to a deep ultraviolet micro-LED chip with enhanced light emission from photonic crystals and a method for preparing the same, and belongs to the field of light-emitting electronic technology. The present invention uses nanosphere etching technology to prepare a periodic photonic crystal structure on the n-AlGaN epitaxial layer exposed around the MESA table, thereby improving the light extraction of the deep ultraviolet micro-LED. The present invention proposes to increase the light scattering path through the grating diffraction effect and improve the light extraction efficiency of the deep ultraviolet micro-LED by introducing a photonic crystal structure with a period equivalent to the emission wavelength of the active layer into the exposed n-AlGaN layer; at the same time, an Al-based metal film with a high reflectivity for ultraviolet light is selected as the N-electrode connecting metal, which can not only connect the N electrodes around different table tops to form a complete loop, but also reflect ultraviolet light to one side of the substrate, further improving the light extraction efficiency of the chip, and ultimately improving the external quantum efficiency of the entire deep ultraviolet chip.

The present invention provides an LED chip and a preparation method thereof, wherein etching is performed in a local area of ​​an epitaxial stack to a part of the N-type semiconductor layer, so that the epitaxial stack forms an N-electrode manufacturing area and a first table; a P-electrode manufacturing area is provided on the surface of the first table, and a plurality of holes are provided on the edge of the first table, each of the holes extending from the P-type semiconductor layer through the active area to a part of the N-type semiconductor layer; a light-transmitting insulating material is filled inside each of the holes, and each of the holes is filled at least to the same horizontal surface as the active area; and then, under the condition that the driving current of the LED chip is constant, the current density is effectively improved to achieve the effect of enhancing the internal quantum efficiency of the LED chip; at the same time, light can be emitted through the side walls of the holes, the light emission area is increased, and the external quantum efficiency of the LED chip is further improved; thereby, the light extraction rate of the LED chip is effectively improved.

The present invention provides a high-reflection LED flip chip and a manufacturing method and packaging structure thereof. The present invention reduces the distance between contact electrodes, adds a second transparent insulating layer, and opens welding holes on the second transparent insulating layer so that the welding spacing remains unchanged, which can not only greatly improve the chip's external quantum efficiency, but also reduce the light output from the side and electrode surface, thereby effectively improving the brightness without changing the packaging form. The problem of low light output efficiency caused by the large distance between contact electrodes in the prior art is solved.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The invention discloses a method for improving the performance stability of a QLED device through negative pressure processing. According to the method, after functional layer deposition and electrode evaporation of the QLED device are completed, the QLED device is placed in a negative pressure environment to be processed. Compared with a natural positive aging process which is long in time consumption and unstable in the prior art, the negative pressure treatment provided by the invention is a simple, convenient, efficient and controllable technological means. According to the method, rapid pre-stabilization of the device can be completed in only about three days, and the processing time is remarkably shortened. After being processed by the method, key performance parameters such as brightness, external quantum efficiency and the like of the QLED device are remarkably improved and stabilized, the problem of color shift caused by inconsistent aging of red, green and blue light devices is effectively relieved, the batch consistency and predictability of device production are improved, and the method has important industrial application prospects.

The invention provides a compound based on a sulfur-phosphorus heterocyclic ring receptor and a nitrogen-containing heterocyclic ring donor, and in the compound, the sulfur-phosphorus heterocyclic ring receptor is used as a parent and has a nitrogen-containing heterocyclic ring substituent group. The compound has thermal excitation delayed fluorescence luminescence performance, the ICT effect of a system is optimized by utilizing the moderate electron withdrawing capability of phosphine oxide groups in molecules, the RISC efficiency is improved, and meanwhile, exciton quenching caused by excited state structure relaxation and intermolecular interaction is inhibited by utilizing the steric effect of the phosphine oxide groups, so that the luminescence efficiency is improved. Therefore, the photoluminescence quantum yield, the luminescence efficiency and the device stability of the blue light TADF luminescent material are improved.

A deep ultraviolet photodetector based on large-size hexagonal boron nitride single crystals and a preparation method thereof, comprising: a substrate; an adhesive, spin-coated on the upper surface of the substrate; a large-size hexagonal boron nitride single crystal, covering the surface of the substrate spin-coated with the adhesive; and a pair of electrodes, partially covering the upper surface of the large-size hexagonal boron nitride single crystal. The present invention prepares a deep ultraviolet photodetector with high response speed, high switching ratio, and high spectral selectivity in the deep ultraviolet region through large-area, high-quality, and moderately thick large-size hexagonal boron nitride single crystals. The detector has great application prospects in space optical communications, military early warning detection, ozone hole monitoring, and aerospace fields.

The present invention relates to the technical field of organic electroluminescent materials, and in particular to a silyfluorene derivative as shown in Formula I and an organic electroluminescent element comprising the same. The compound shown in Formula I provided by the present invention improves the thermal stability of the material and the ability to transport carriers. The material of the present invention can be used in an organic electroluminescent element to significantly reduce the driving voltage, improve the luminous efficiency and lifespan.