14results about How to "Improve external quantum efficiency" patented technology

This invention relates to an organic electroluminescent element, a display device, a lighting device, and an anthracene compound, comprising a pair of electrodes and a light-emitting layer, wherein the pair of electrodes includes an anode and a cathode, the light-emitting layer is disposed between the pair of electrodes, and the light-emitting layer comprises an anthracene compound represented by the following formula (1) as the host material, and a polycyclic aromatic compound or polymer thereof represented by the following formula (2) as the dopant material (in formula (1), Ar...). c For aryl, etc., R c For hydrogen, etc., Ar 11 ~Ar 18 Any two of them are aryl, etc., and the others are hydrogen, etc., at least one hydrogen in formula (1) can be substituted by deuterium, etc., in formula (2), ring A, ring B and ring C are substituted aryl rings, etc., X 1 and X 2 For example, >O, >N-R (R is aryl, etc.).

This invention relates to luminescent materials, specifically to a red-light perovskite luminescent material, its preparation method, and a light-emitting diode device. The red-light perovskite luminescent material comprises an iodine-based perovskite, wherein the iodine-based perovskite includes at least two spacer cations, and the iodine-based perovskite comprises a structure with the structural formula NMA. x PPA y Cs w Pb m I i The compound, of which 0.08

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The invention discloses a method for improving the performance stability of a QLED device through negative pressure processing. According to the method, after functional layer deposition and electrode evaporation of the QLED device are completed, the QLED device is placed in a negative pressure environment to be processed. Compared with a natural positive aging process which is long in time consumption and unstable in the prior art, the negative pressure treatment provided by the invention is a simple, convenient, efficient and controllable technological means. According to the method, rapid pre-stabilization of the device can be completed in only about three days, and the processing time is remarkably shortened. After being processed by the method, key performance parameters such as brightness, external quantum efficiency and the like of the QLED device are remarkably improved and stabilized, the problem of color shift caused by inconsistent aging of red, green and blue light devices is effectively relieved, the batch consistency and predictability of device production are improved, and the method has important industrial application prospects.

This invention provides materials for photoelectric conversion elements, which facilitate the fabrication of photoelectric conversion elements with low dark current, high external quantum efficiency, and excellent responsiveness. This invention uses photoelectric conversion element materials containing a fused-ring compound represented by the following formula (1). In formula (1), ring A represents the structure represented by the following formula (2); R 1 ~R 8 Each of the following groups independently represents a hydrogen atom, an alkyl group with 1 to 18 carbon atoms (with or without substitution), an alkenyl group with 1 to 18 carbon atoms, a cycloalkyl group with 1 to 18 carbon atoms, a bicycloalkyl group with 1 to 18 carbon atoms, a tricycloalkyl group with 1 to 20 carbon atoms, an aromatic hydrocarbon group with 6 to 30 carbon atoms (with or without substitution), a heteroaryl group with 3 to 30 carbon atoms (with or without substitution), or -NR. 21 R 22 OR 23 .

This application belongs to the field of display technology and relates to a composite thin film, a light-emitting device, and a display apparatus. The composite thin film includes a first film layer, a barrier layer, and a second film layer sequentially stacked. The first film layer is made of a metal oxide, the second film layer is made of a p-type doped material, and the barrier layer is made of a polymer. The light-emitting device of this application has a composite film layer, and the composite film layer has a highly dense barrier layer, which can improve the external quantum efficiency and lifespan of the light-emitting device.

The application discloses a polycyclic compound and an organic electroluminescent device containing the same. The compound structure is shown as formula I, which is a boron-nitrogen material with a planar structure. By introducing a bridged cycloalkyl group, the rigidity of the polycyclic compound is increased, and the introduction of a π electron-containing structure is reduced, so that the π-π mutual attraction in the molecule is minimized. The compound has similar molecular vibration modes and energy levels as existing boron-nitrogen materials, avoids the occurrence of red shift of the emission wavelength, and has a narrow emission spectrum and a half peak width. The compound is suitable for a blue host / dopant system in a blue series of AM-OLED and an organic electroluminescent device. The organic electroluminescent device containing the compound has a high external quantum efficiency, and the lifetime performance is particularly excellent.

This invention proposes a simple and easy-to-operate method for preparing core-shell quantum dots that suppress Auger recombination, and develops Mn-doped CsPbCl3@Cs4PbCl6 core-shell nanocrystals. The Auger suppression performance was studied using wavefunction engineering. The method includes the following steps: ① Synthesizing CsPbCl3 nanocrystals via thermal injection. ② Forming a Cs4PbCl6 shell nanocrystal on the CsPbCl3 nanocrystals. An oleic acid solution containing Cs is added to the CsPbCl3 nanocrystals; Cs ions tend to react with free Pb ions, and the Cs4PbCl6 shell nanocrystals grow epitaxially on the surface of the CsPbCl3 core nanocrystals. ③ Injecting a MnCl2 precursor into the pre-synthesized core-shell nanostructure at room temperature yields highly efficient Mn-emitting nanocrystals with promising applications in optoelectronics, generating significant social and economic benefits.

The present application relates to the technical field of chip manufacturing, in particular to a high-speed photoelectric detector and a manufacturing method thereof, the antireflection film prepared based on the spraying process of the polymer has good antireflection effect on the communication waveband light signal, the external quantum efficiency of the photoelectric detector is increased, and the antireflection effect on the light signal is improved; meanwhile, the antireflection film prepared based on the spraying process of the polymer has good interface contact, the polymer releases thermal stress due to the periodic distribution of nano-pores when the temperature changes, the temperature influence on the photoelectric detector is reduced, and no defects are generated on the surface of the photoelectric detector, the influence of the degradation of the photoelectric detector is avoided, and the high-speed response characteristics of the photoelectric detector are ensured.

This invention provides a compound containing a phosphate ester group, its preparation method, and its application in perovskite light-emitting devices. The compound structure is shown in formula (I). This invention utilizes the strong electron affinity of the phosphate ester group to regulate charge carriers in the device, increasing the local carrier concentration on the perovskite film surface and promoting carrier radiative recombination. The phosphoxy groups in the compound have physical and / or chemical interactions with the perovskite components, influencing the kinetic behavior of different components during crystallization, regulating phase composition, passivating unsaturated lead defects in the perovskite lattice, reducing non-radiative energy loss, and improving the fluorescence quantum yield of the perovskite film. By introducing different substituents, the defect passivation effect can be adjusted. Devices obtained using the compound of this invention as an additive achieve high external quantum efficiency without significantly affecting the structure and luminescent properties of the perovskite itself.

The present application provides a compound for a cover layer represented by the following Chemical Formula 1 and an organic light emitting element comprising the same: <Chemical Formula 1>

This invention provides a triarylboron-modified fluorescent material, its preparation method, and its applications. The triarylboron-modified fluorescent material is as shown in Compound I. The compound of this invention utilizes the electron-withdrawing ability and high steric hindrance of triarylboron to effectively accelerate the antisystem crossing rate of narrow-band luminescent materials, reducing intermolecular interactions, thereby improving quantum efficiency and suppressing the efficiency roll-off problem of organic electroluminescent devices. Furthermore, due to the typical electron-donating characteristics, strong resonance effect, and rigid molecular structure of this type of molecule, the emission spectrum becomes narrower, thus achieving very high purity green light emission.

This invention relates to the field of organic electroluminescent materials, specifically to an iridium metal complex, and more particularly to an iridium metal complex for deep red-near-infrared emission and its applications, as well as organic electroluminescent devices using the iridium metal complex of this invention. The iridium metal complex of this invention has the structure shown in formula (1). OLED devices prepared using the iridium metal complex of this invention exhibit higher luminous efficiency and better lifespan, demonstrating promising application prospects.

The invention relates to a high-brightness-ratio chip coarsening etching solution and a preparation method and application thereof, and the high-brightness-ratio chip coarsening etching solution comprises the following components by weight: 20-50 parts of quaternary ammonium hydroxide; 20-50 parts of ammonium salt; 1-15 parts of a buffer agent; 0.1 to 1 part of a surfactant; and 30-50 parts of ultrapure water. The addition of the buffer agent can inhibit the generation of precipitates, balance the pH and Factivity, control the etching rate, form a uniform and fine pyramid structure on the surface of the epitaxial layer, and avoid the problem of over-etching caused by too fast local micro-chemical reaction; and meanwhile, the buffer agent can also enable the quaternary ammonium hydroxide to be uniformly adsorbed on the LED chip, so that further lateral erosion is avoided.