109 results about "Ridge waveguides" patented technology

The present application relates to a kind of on-chip photo-thermal gas sensor and on-chip photo-thermal gas sensor assembly, the refractive index of the upper waveguide material layer of sensor ridge waveguide layer is greater than the refractive index of lower waveguide material layer, can support TM mode pump light and TE mode probe light simultaneously. That is, both high absorption of pump light and weak influence of probe light on the gas to be measured are considered, and the detection accuracy of the gas is improved. Moreover, a simpler waveguide structure is used, and the waveguide preparation process is simple, and the waveguide loss is relatively low. Compared with the photo-thermal interference method in optical fiber sensing, the interaction between pump light and the gas to be measured is greatly improved, the length of the detection waveguide is greatly shortened while ensuring high sensitivity, and the device size can be reduced to micrometer level. In addition, the waveguide structure of the on-chip photo-thermal gas sensor disclosed in the present application is prepared from chalcogenide glass, which has more obvious advantages for gas detection in the mid-infrared waveband.

The utility model relates to the technical field of lasers, and discloses a high-slope-efficiency surface grating surface emitting laser which comprises a substrate, a lower waveguide layer, an active layer and an upper waveguide layer from bottom to top along the cross section. A ridge-shaped waveguide is formed in the middle area of the uppermost layer of the upper waveguide layer, and a Bragg grating is etched on the surface of the ridge-shaped waveguide; the Bragg grating comprises a section of second-order grating located in the middle and two sections of first-order gratings located at the two ends; a lambda / 4 phase shift is arranged in the second-order grating; the lambda / 4 phase shift is located in an etching area or a non-etching area of the first-order grating closest to the second-order grating; when the lambda / 4 phase shift is located in the etching region of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is maximum, and the downward diffraction light power is minimum; when the lambda / 4 phase shift is located in the non-etching area of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is minimum, and the downward diffraction light power of the second-order grating is maximum. According to the invention, high-slope efficiency lasing can be realized.

An electro-optic device is described. The electro-optic device includes a ridge waveguide and a channel waveguide. The ridge waveguide includes a first portion of at least one electro-optic material. The first portion of the electro-optic material(s) includes a slab and a ridge on the slab. The ridge has a ridge height. The slab has a slab height less than the ridge height. The channel waveguide is optically coupled with the ridge waveguide and includes a second portion of the electro-optic material(s). The channel waveguide has a channel height less than the slab height.

The invention relates to the technical field of optical communication, and provides a polarization separation rotator and optical communication equipment. The polarization separation rotator comprises an input coupling waveguide, a ridge waveguide and a separation waveguide, and the input coupling waveguide, the ridge waveguide and the separation waveguide are sequentially arranged in the light propagation direction; the input coupling waveguide is used for coupling an input optical signal to the ridge waveguide, and the input optical signal comprises two polarization modes; the vertical section of the ridge waveguide is in a step shape to form a vertical asymmetric structure, and the vertical section is perpendicular to the light propagation direction. And the separation waveguide is used for separating the optical signals in the two polarization modes so as to respectively transmit the optical signals to different output ports. According to the polarization separation rotator provided by the invention, the defects that the size is difficult to further reduce and the polarization extinction ratio is reduced in the prior art are overcome, efficient polarization mode hybridization is realized by increasing the asymmetry in the vertical direction, and miniaturization of the polarization separation rotator is facilitated.

A waveguide for an optical modulator system includes multiple tapered portions, or regions, designed to couple a CMBH laser light source to a ridge modulator. Using a waveguide with different tapered portions, transmission efficiency between the CMBH light source and the ridge modulator is improved, thus allowing the optical modulator to be used in high-speed applications. Waveguide described herein may include tapered portions in which, along a single direction, include one portion that tapers to a reduced width while another portion tapers to an increased width.

An electro-optic device is described. The electro-optic device includes at least one optical material having an electro-optic effect. Further, the optical material(s) include lithium. The optical material(s) have a slab and a ridge waveguide. The slab has a top surface. The slab includes free surfaces. Each of the free surfaces is at a nonzero angle from the top surface of the slab and mitigates stress in the slab.

The invention discloses a mid-infrared laser based on three-device on-chip integration and a preparation method thereof, relates to the crossing field of a semiconductor laser technology and an optical communication technology, and solves the problem that the existing quantum cascade laser QCL technology cannot give consideration to both high modulation rate and high power. An intermediate infrared laser comprises a QCL unit, an EAM unit and an SOA unit which are sequentially arranged on a substrate. The substrate comprises a semi-insulating InP (Indium Phosphate); the QCL unit, the EAM unit and the SOA unit share the same ridge-shaped waveguide structure and grow through epitaxy butt joint. The method provided by the invention is suitable for a mid-infrared band space communication scene with high requirements on the laser modulation rate, the output power and the single-mode stability.

The utility model discloses a composite multimode waveguide structure, which belongs to the technical field of optoelectronic devices and comprises a plasmon unit made of a metal material or a material with a negative real part dielectric function. The plasmon unit is structurally characterized by comprising nanoparticles, nanowires, nanopore arrays or gradient structures; the dielectric waveguide is made of a semiconductor material with a high refractive index, and the dielectric waveguide is designed to be one of a strip-shaped waveguide, a ridge-shaped waveguide or a slit waveguide; and the substrate layer is located below the plasmon unit and the dielectric waveguide and comprises at least one low-refractive-index supporting layer, and the material system of the low-refractive-index supporting layer is one of an oxide material, a nitride material, a fluoride material or a composite substrate structure. According to the scheme, the contradiction of a plasma device and silicon photonics among mode degree of freedom, loss and process compatibility is solved.

The present invention discloses a lithium niobate thin film phase modulator heterogeneously integrated with silicon nitride, belonging to the field of integrated optical gyroscopes; comprising a substrate, a silicon dioxide cladding, a lithium niobate thin film-silicon nitride optical waveguide core layer, and a modulation electrode; wherein the optical waveguide core layer is a ridge structure, comprising a lithium niobate thin film layer, a silicon nitride layer, and a silicon nitride carrier strip, satisfying single-mode transmission conditions; the silicon nitride carrier strip constitutes a multimode interference coupler, a bending unit, and a modulation arm; the multimode interference coupler adopts a one-to-two structure with a splitting ratio close to 1:1; the ridge waveguide structure is used for light transmission, and the multimode interference coupler unit is used for light splitting; simultaneously, three modulation electrodes generate an electric field, causing the light transmitted in the two modulation arms to undergo phase changes, thereby outputting two beams of light with a certain phase difference. Polarization is achieved based on the different binding effects of the ridge waveguide on the TE mode and the TM mode, that is, the loss of the TE mode and the TM mode in the waveguide is different, achieving a high polarization extinction ratio.

A dual-polarized four-ridge horn antenna disclosed by the present invention comprises a horn section and a waveguide section, the horn section comprises a horn shell and four ridges which are located in the horn shell and have the same structure, the four ridges form a cross-shaped structure, two ridges located on the same straight line are a pair, two feeder lines are configured in the waveguide section, and the waveguide section is provided with two feed lines. The two feeder lines respectively excite the pair of ridges at the same time, so that dual polarization is realized. The two pairs of ridges are excited at the same time to realize two polarization directions at the same time, and low-frequency cut-off wavelength is effectively reduced and high-frequency cut-off wavelength is improved by means of smooth transition of the ridge waveguides, so that the bandwidth of the horn antenna is widened.

The present invention discloses a curved ridge waveguide millimeter wave radar antenna, comprising a 1-to-2 power splitter, two curved ridge waveguides, a horn, and n rectangular radiating waveguides, where n is an even number greater than or equal to 4. The n rectangular radiating waveguides are distributed along a straight line and are evenly divided into two groups of rectangular radiating waveguides. The 1-to-2 power splitter equally splits an electromagnetic wave signal generated by excitation into two electromagnetic wave signals, which are then output to two curved ridge waveguides in a one-to-one correspondence. Both curved ridge waveguides transmit the electromagnetic wave signal transmitted thereto to the n rectangular radiating waveguides. Each rectangular radiating waveguide couples the electromagnetic wave signal transmitted thereto to the horn, which radiates the electromagnetic wave signal thereto into free space. The antenna has the advantages of low loss, low side lobes on the H-plane, a wide E-plane 3dB beamwidth, and a small size. When used as an antenna unit in an antenna array, the antenna can meet the condition that each antenna unit is arranged according to half a wavelength, and is easy to process.

The invention provides a visible light modulator which is small in size and capable of high-speed driving at low voltage. An optical modulator (1) is provided with: a substrate (2); an optical waveguide layer (3) comprising lithium niobate in which a plurality of MZ-type waveguides including first and second ridge waveguides that propagate visible light are arranged in parallel; a signal electrode having an interaction portion disposed along the MZ-type waveguide; the optical modulator includes a first ridge waveguide, a second ridge waveguide, a signal electrode disposed above the first ridge waveguide, a first ground electrode disposed above the second ridge waveguide, and signal electrode lead-out portions (62R-3, 62B-3, 62G-3) connecting the signal electrode and a pad disposed at an end edge portion (S3), and a second ground electrode disposed above the first ridge waveguide and the second ridge waveguide, the signal electrode lead-out portions (62R-3, 62B-3, 62G-3) connecting the signal electrode and the pad disposed at the end edge portion (S3). And a light multiplexing unit (40) that is disposed downstream of the Mach-Zehnder waveguide and multiplexes the plurality of visible light, in which the first ground electrode, the second ground electrode, and the signal electrode lead-out unit are disposed at positions that do not overlap the light multiplexing unit in plan view.

A silicon-phase change material hetero-integrated waveguide structure includes a silicon flat plate layer and a phase change material deposited on the silicon flat plate layer. A non-volatile waveguide phase shifter includes a base layer, a hetero-integrated waveguide structure and a silicon waveguide mode spot conversion structure fixed on the base layer, two ends of the hetero-integrated waveguide structure are symmetrically connected to the silicon waveguide mode spot conversion structure; the silicon waveguide mode spot conversion structure includes two silicon waveguides with narrow-to-wide and an ridge waveguide with wide-to-narrow arranged in axial symmetry; an aluminum oxide film is covered on the phase change material, a single-layer graphene is on the aluminum oxide film, and a metal layer is on the single-layer graphene, the metal layer includes two metal electrodes. The single-layer graphene forms ohmic contact with the metal electrodes, current passes through the graphene to generate heat, the heat is conducted through the aluminum oxide film below the single-layer graphene to provide heat required for phase change of the low-loss phase change material. The phase shifter has the advantages of compact structure, low insertion loss, small driving voltage, low phase change power consumption, non-volatile phase adjustment, etc. and can be used as a core optical path regulation device in an integrated optoelectronic chip.

The invention provides a broadband horizontal polarization waveguide slot antenna array, which comprises a radiation slot layer, a slot coupling layer, a feed network layer and a standard waveguide interface, and is characterized in that the radiation slot layer is provided with 16 independent ridge waveguides, 16 V-shaped slots are cut on each ridge waveguide, each ridge waveguide is blocked by three cavity isolation walls to form four ridge waveguide sections, and each cavity isolation wall is provided with one V-shaped slot. Four V-shaped slots are distributed on each ridge waveguide section, 64 I-shaped coupling slots are formed in the slot coupling layer, the I-shaped coupling slots are located under the ridge waveguide sections, and the feed network layer adopts a flattened narrow-edge ridge waveguide design. Comprising a five-order one-to-two ridge waveguide power divider, a ridge waveguide-to-common waveguide converter, a multi-branch waveguide impedance transformer and an E-plane T-shaped joint. The antenna has the beneficial effects that the antenna is light in weight and low in profile; the antenna bandwidth is improved; the antenna structure is simple.

A silicon modulator with lateral capacitance structure includes, from bottom to top, substrate (3), dielectric layer (2), ridge waveguide (10), capacitive dielectric layer (20), first transparent electrode (108), second transparent electrode (101), first contact metal (130), second contact metal (131), third contact metal (132), fourth contact metal (133), and upper cladding layer (4). Ridge waveguide (10) includes PN junction, P-doped region (105), N-doped region (102), P+ region (106), P++ region (107), N+ region (103), and N++ region (104). First transparent electrode (108) is arranged on upper left side of capacitive dielectric layer (20), and together with capacitive dielectric layer (20), P-doped region (105), P+ region (106), and P++ region (107), forms P-region lateral capacitance structure. Second transparent electrode (101) is arranged on upper right side of capacitive dielectric layer (20), and together with capacitor dielectric layer (20), N-doped region (102), N+ region (103), and N++ region (104), forms N-region lateral capacitance structure. Silicon modulator bandwidth is enhanced according to the technical solution.

The present invention relates to an on-chip dual silicon carbide color center HOM interferometer device based on stress regulation. Using this device, a completely monolithic SiC photonic circuit can be realized. Two frequency-matched color center single-photon sources are connected to an on-chip beam splitter via a single-mode ridge waveguide, making it possible to perform two-photon interference experiments on the chip.

The embodiment of the invention provides a distributed feedback laser, relates to the technical field of lasers, and is used for solving the problem that the performance is affected by insertion of a phase shift grating. The laser comprises a ridge waveguide and feedback gratings arranged on the two sides of the ridge waveguide, each feedback grating comprises a Bragg grating and a phase shift grating inserted into the Bragg grating, the Bragg grating comprises two connecting gratings located on the two sides of the phase shift grating respectively, and each connecting grating comprises a chirp grating and a uniform grating which are connected. The uniform grating is away from the phase shift grating relative to the chirp grating. The length of grating teeth in the chirp grating is a first length, and the duty ratio is a first duty ratio; the width of a part, corresponding to the chirp grating, of the ridge waveguide is a first waveguide width; in the process of approaching the uniform grating from the phase shift grating along the first direction, at least one of the first length, the first duty ratio and the first waveguide width is gradually changed to realize grating coupling coefficient chirp of the chirp grating. The laser can be applied to the field of optical communication.

The application discloses a photonic device, a cross waveguide and a waveguide layer thereof. The waveguide layer comprises a flat plate sublayer, a first waveguide and a second waveguide intersecting with the first waveguide, wherein the first waveguide and the second waveguide are both ridge waveguides; the first waveguide and the second waveguide are arranged on the flat plate sublayer, and the flat plate sublayer, the first waveguide and the second waveguide are integrally formed. The application solves the technical problem of fast loss of the ridge waveguide in the related art.

The application relates to the technical field of lasers, and provides a structure and a manufacturing method of an electro-absorption modulation laser chip. The electro-absorption modulation laser chip is composed of a laser region 1, an isolation region 2 and a modulation region 3 which are coupled in sequence, and specifically, the laser region 1, the isolation region 2 and the modulation region 3 have respective ridge waveguide structures; wherein the quantum well width under the ridge waveguide structure of the modulation region 3 is larger than the quantum well width under the ridge waveguide structure of the laser region 1 by a preset value. In the application, the ridge waveguide process is adopted, the growth of an iron-doped buried layer is not needed, the failure phenomenon caused by the epitaxial steps and the iron-doped buried growth is reduced, and the application has the advantages of high yield and low cost.

A silicon-photonic optical modulator includes at least one optical input and at least one optical waveguide that is connected to the at least one optical input. The at least one optical waveguide is configured to propagate quasi-transverse-magnetic (quasi-TM) polarized light, where each of the at least one optical waveguide is configured as a rib waveguide that includes a rib arranged on a slab. The silicon-photonic optical modulator also includes at least one electrode configured to apply at least one electric field to the quasi-TM polarized light in the at least one optical waveguide. In some implementations, a height of the rib waveguide is greater than 0.85 λ / n, where λ is a free-space wavelength of light and n is a refractive index of silicon in the silicon-photonic optical modulator, and a width of the rib waveguide is greater than a thickness of the slab.

The application discloses an active flat-plate-passive ridge structure gain waveguide and a preparation method thereof. The scheme can break through the strong light field limitation, significantly increase the mode field area, and fully utilize the low-loss transmission characteristics of the ridge waveguide structure by limiting the injected ions in the active flat-plate area and guiding light only in the ridge. Moreover, the structure has excellent process friendliness and preparation economy. The two preparation technologies provided by the application are completely based on mature semiconductor planar processes, do not need to introduce complex and expensive special equipment or steps, and can be realized through core steps such as single patterning etching, thin film growth, polishing and thinning and ion implantation. The process flow is greatly simplified, which means that the preparation process has higher process tolerance and production yield and lower preparation cost. The preparation process can realize rapid large-scale production relying on the existing semiconductor manufacturing line and provide a feasible process solution for the industrialization of integrated photonic devices.

The invention discloses an ultra-compact reconfigurable light beam splitter based on reverse design, and the device comprises a multimode interference coupler which is realized based on a ridge waveguide and comprises a phase change material region, an N-type doped silicon waveguide and a P-type doped silicon waveguide, and the N-type doped silicon waveguide and the P-type doped silicon waveguide are arranged at the two sides of the phase change material region. The phase change material region is arranged on the ridge of the ridge waveguide and is obtained through reverse design; the metal electrode is used for applying voltage to the N-type doped silicon waveguide and the P-type doped silicon waveguide on the two sides of the phase change material area, so that the phase state of the phase change material in the phase change material area is changed; and the conical input waveguide and the conical output waveguide are arranged at the input end and the output end of the multimode interference coupler. The fixed light beam splitting mode of a traditional device is broken through, the light beam splitter integrates the optical regulation and control characteristics of the phase change material and the degree of freedom of a reversely designed structure, and an innovative solution with high dynamic range, low insertion loss and chip-level integration is provided for an optical interconnection system.

The present disclosure is directed toward photonic elements comprising rib-waveguide-based ring resonators having high coupling efficiency between their bus and ring waveguides within the coupling region of the ring resonator, as well as operability over a wide spectral range. Embodiments disclosed herein employ a small-diameter ring waveguide and a bus waveguide that collectively define an asymmetrical coupler having a coupling region at which the optical confinement of the bus waveguide is stronger on side of the bus waveguide distal to the ring waveguide than on the side of the bus waveguide that is proximal to the ring waveguide. In some embodiments, in the coupling region, the bus waveguide has ridge and an inner bus-slab portion that is shared with the ring waveguide, while the outer bus-slab portion is at least partially removed to give rise to stronger optical confinement at the outer edge of the ridge of the bus waveguide.

The present disclosure provides a mode spot converter and a preparation method thereof, which are used for directly coupling an optical fiber and a photoelectric detector chip. The mode spot converter comprises a substrate, a ridge waveguide formed on the substrate, and the ridge waveguide comprises a ridge single-mode waveguide, a tapered ridge waveguide and a widened ridge waveguide connected in sequence along a direction parallel to the surface of the substrate. The widened ridge waveguide is used for connecting an optical fiber and matching the mode field of the optical fiber. The tapered ridge waveguide is used for amplifying and concentrating the mode spot of the light wave output by the optical fiber. The ridge single-mode waveguide is used for coupling the light wave after mode spot conversion to the photoelectric detector chip. The mode spot converter improves the coupling efficiency, accuracy and tolerance, and transmission efficiency, greatly reduces the loss of directly coupling a single-mode optical fiber and a ridge single-mode waveguide, and has high compact integration and low packaging cost.

The present disclosure relates to the field of electro-optical devices. Specifically, the present disclosure provides a monolithically integrated electro-optical phase modulator fabricated using a III-V semiconductor process on silicon. The phase modulator includes a silicon-based n-type substrate base layer and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. In addition, the phase modulator includes one or more insulating layers provided on the ridge waveguide, and a silicon-based p-type cap layer provided on the one or more insulating layers, at least above the ridge waveguide, wherein the one or more insulating layers have a total thickness of 1-100 nm.

The invention relates to an integrated photonic circuit (10) comprising at least one waveguide (12) for guiding light and at least one coupling device (14) for coupling light into and / or out of the waveguide (12), wherein the waveguide (12) has at least one end (16) for coupling light in and / or out, wherein the waveguide (12) has a taper section (18) at its end (16), wherein the taper section (18) extends at least partially, in particular completely, in a longitudinal direction (11), wherein the waveguide (12) is designed to taper along the taper section (18) towards the end (16) of the waveguide (12), wherein the taper section (18) has a first section (20) in which the waveguide (12) is designed as a ridge waveguide, wherein the taper section (18) has a second section (22) adjoining the first section (20), in which the waveguide (12) is designed as a strip waveguide, wherein the coupling device (14) at least partially covers the taper section (18), in particular the second section (22), in particular wherein the coupling device (14) is designed to taper at least partially, in particular completely, in the longitudinal direction (11) towards the end (16) of the waveguide (12). The invention also relates to a kit consisting of at least one such integrated photonic circuit and at least one optical fiber (36).

The application discloses a waveguide device structure manufacturing method and a waveguide device structure, and relates to the technical field of waveguide device structures. The method comprises the following steps: forming a waveguide layer and a hard mask on a substrate; etching the waveguide layer through the hard mask to form a ridge-shaped waveguide pattern; using a first fluorine-containing free radical, a first nitrogen-containing free radical and a first oxygen-containing free radical to perform first processing on a first sidewall of the ridge-shaped waveguide pattern with the hard mask to remove a first protruding part; using a second nitrogen-containing free radical and a second oxygen-containing free radical to perform second processing on the first sidewall to perform surface passivation protection; the first processing and the second processing are alternately cycled for multiple times to reduce the surface roughness of the first sidewall; after the hard mask is removed, using a first hydrogen-containing free radical and a hydroxyl-containing free radical to perform third processing on the first sidewall to remove a second protruding part, and the surface roughness of the first sidewall is further reduced. The application can significantly improve the smoothness of the surface of the ridge-shaped waveguide pattern, thereby improving the key performance of the device.

An antenna module comprises a circuit board and a radio frequency integrated circuit. The circuit board is provided with a first surface and a second surface opposite to the first surface, and comprises a slot antenna, a ridge-shaped waveguide tube and a groove. The slot antenna is arranged on the first surface. The ridge waveguide tube is connected to the slot antenna and has an inner wall. The groove is recessed from the second surface to the first surface. The radio frequency integrated circuit is arranged in the groove. The antenna module can reduce the volume and improve the electrical performance.

The utility model relates to the technical field of semiconductor lasers, in particular to a semiconductor laser chip, which comprises a substrate, a growth buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper cladding and a cover layer which are sequentially stacked from bottom to top in the longitudinal direction, a plurality of current injection regions with different widths and a plurality of ion injection regions with different widths are arranged in the transverse direction of the semiconductor laser chip; a plurality of current injection regions are distributed between the two ion injection regions on the two sides; the ion implantation region penetrates through the cover layer and a part of the upper cladding layer in the longitudinal direction; forming a ridge waveguide structure on the cover layer; processing the ridge waveguide structure through ion implantation to form a lateral chirp electric injection modulation ridge waveguide structure; the chirp electric injection structure formed by the utility model can regulate and control each order mode from the aspects of gain and loss, so that the loss of a high-order mode is greater than that of a fundamental mode, and finally, the effects of reducing the output of the high-order mode, reducing the divergence angle and improving the beam quality of a far field are achieved.

The application provides a broadband slot scattering flat panel antenna applied to the field of communication systems. The antenna comprises, from top to bottom, a radome, a radiation slot layer, a coupling cavity layer and an H-T type broadband ridge waveguide feed network layer; the radiation slot layer comprises a radiation cavity, the bottom of the radiation cavity is provided with a plurality of radiation slots arranged uniformly and at intervals, and a radiation metal ridge is arranged between two adjacent rows of radiation slots; the coupling cavity layer comprises a plurality of coupling cavities, each coupling cavity corresponds to an antenna unit, each antenna unit comprises four radiation slots, the bottom center of each coupling cavity is connected with a ridge waveguide through a coupling slot, and the coupling slot is located on one side of the center of the wide side of the ridge waveguide; the H-T type broadband ridge waveguide feed network layer is internally provided with an H-T type broadband ridge waveguide feed network composed of a plurality of ridge waveguides, and a taper pin type power distribution is adopted to perform amplitude and phase weighting on input excitation signals so as to radiate out through the radiation slots. The antenna has an ultra-low profile, a lightweight design and higher radiation efficiency.