127 results about "Ridge waveguides" patented technology

Embodiments of the present application relate to the technical field of semiconductor lasers, and provide a semiconductor laser and a manufacturing method therefor, which are used to mitigate the problem of chirp in semiconductor lasers. The semiconductor laser comprises: a substrate; a ridge waveguide which is arranged on the substrate and extends in a first direction of the substrate; and a grating which is arranged at a top portion of the ridge waveguide. The grating comprises first regions and second regions periodically arranged in the first direction, each first region comprises a semiconductor material, each second region comprises an insulating dielectric material, and the refractive index of the insulating dielectric material is greater than the refractive index of the semiconductor material.

The present application relates to a kind of on-chip photo-thermal gas sensor and on-chip photo-thermal gas sensor assembly, the refractive index of the upper waveguide material layer of sensor ridge waveguide layer is greater than the refractive index of lower waveguide material layer, can support TM mode pump light and TE mode probe light simultaneously. That is, both high absorption of pump light and weak influence of probe light on the gas to be measured are considered, and the detection accuracy of the gas is improved. Moreover, a simpler waveguide structure is used, and the waveguide preparation process is simple, and the waveguide loss is relatively low. Compared with the photo-thermal interference method in optical fiber sensing, the interaction between pump light and the gas to be measured is greatly improved, the length of the detection waveguide is greatly shortened while ensuring high sensitivity, and the device size can be reduced to micrometer level. In addition, the waveguide structure of the on-chip photo-thermal gas sensor disclosed in the present application is prepared from chalcogenide glass, which has more obvious advantages for gas detection in the mid-infrared waveband.

The utility model relates to the technical field of lasers, and discloses a high-slope-efficiency surface grating surface emitting laser which comprises a substrate, a lower waveguide layer, an active layer and an upper waveguide layer from bottom to top along the cross section. A ridge-shaped waveguide is formed in the middle area of the uppermost layer of the upper waveguide layer, and a Bragg grating is etched on the surface of the ridge-shaped waveguide; the Bragg grating comprises a section of second-order grating located in the middle and two sections of first-order gratings located at the two ends; a lambda / 4 phase shift is arranged in the second-order grating; the lambda / 4 phase shift is located in an etching area or a non-etching area of the first-order grating closest to the second-order grating; when the lambda / 4 phase shift is located in the etching region of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is maximum, and the downward diffraction light power is minimum; when the lambda / 4 phase shift is located in the non-etching area of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is minimum, and the downward diffraction light power of the second-order grating is maximum. According to the invention, high-slope efficiency lasing can be realized.

The invention relates to the technical field of semiconductor devices, in particular to a semiconductor laser device, which comprises a substrate; the ridge waveguide array comprises a fundamental mode waveguide array and a coupling waveguide array, the fundamental mode waveguide array comprises N fundamental mode waveguides, the coupling waveguide array comprises a plurality of coupling waveguides, and at least one coupling waveguide is provided with an optical loss structure; an electrical isolation structure; the coupling waveguide array is located on one side of the fundamental mode waveguide array, and the number of the coupling waveguides is N-1; or, the two coupling waveguide arrays are located on the two opposite sides of the fundamental mode waveguide array respectively, and the number of the coupling waveguides in each coupling waveguide array is N-1; or, the two coupling waveguide arrays are located on the two opposite sides of the fundamental mode waveguide array respectively, and the total number of the coupling waveguides of the two coupling waveguide arrays is N-1. The semiconductor laser device is at least beneficial to realizing high-power output of the fundamental mode of the semiconductor laser device.

The invention provides a double-FP waveguide type laser integrated with a surface grating. The double-FP waveguide type laser comprises an N-face metal electrode layer; an N-type substrate, a lower separation limiting layer, an active layer, an upper separation limiting layer and a double-FP-type ridge waveguide layer are sequentially stacked on the N-face metal electrode layer, and the double-FP-type ridge waveguide layer comprises two FP-type ridge waveguides which are arranged in parallel in the first direction; the ohmic contact layer is arranged on each FP type ridge waveguide; and the P-surface metal electrode layer is arranged on the ohmic contact layer. The laser is high in integration, external light feedback and external light injection are not needed, weak periodicity caused by light feedback is avoided, intra-cavity mode distribution is regulated and controlled by changing waveguide distribution and current injection conditions, multiple nonlinear states such as single-period, multi-period and four-wave mixing are achieved, and on-chip chaotic light signal output of a single longitudinal mode is generated.

The embodiment of the utility model relates to the technical field of electronic devices, provides a waveguide antenna, a waveguide antenna assembly, a radio frequency device, a radar and electronic equipment, and can realize signal transmission between the waveguide antenna and a chip without arranging an additional conversion structure, thereby greatly reducing the structural complexity and the production cost. The waveguide antenna comprises a plurality of waveguide interfaces arranged in an array, and the adjacent waveguide interfaces are orthogonally arranged; the waveguide interface comprises a single ridge-shaped waveguide port, and the single ridge-shaped waveguide port is used for transmitting radio frequency signals radiated and / or received by the waveguide antenna.

The invention discloses an electro-optical modulator and a preparation method thereof. The electro-optical modulator comprises a substrate layer; the resin layer is arranged on one side of the substrate layer; the film lithium niobate layer is arranged on the side, away from the substrate layer, of the resin layer, and ridge waveguides are arranged on the surface of the part, close to the resin layer, of the film lithium niobate layer; and the metal electrode layer is arranged on the partial surface, far away from the resin layer, of the thin film lithium niobate layer. The thin-film lithium niobate electro-optical modulator with the metal electrode layer and the ridge waveguide in different planes is adopted, low half-wave voltage and low light absorption loss can be achieved, meanwhile, the speed and impedance matching of microwaves and light waves are achieved, and therefore microwave loss is reduced.

An electro-optic device is described. The electro-optic device includes a ridge waveguide and a channel waveguide. The ridge waveguide includes a first portion of at least one electro-optic material. The first portion of the electro-optic material(s) includes a slab and a ridge on the slab. The ridge has a ridge height. The slab has a slab height less than the ridge height. The channel waveguide is optically coupled with the ridge waveguide and includes a second portion of the electro-optic material(s). The channel waveguide has a channel height less than the slab height.

An electro-optic device is described. The electro-optic device includes at least one optical material having an electro-optic effect. Further, the optical material(s) include lithium. The optical material(s) have a slab and a ridge waveguide. The slab has a top surface. The slab includes free surfaces. Each of the free surfaces is at a nonzero angle from the top surface of the slab and mitigates stress in the slab.

The invention relates to the technical field of optical communication, and provides a polarization separation rotator and optical communication equipment. The polarization separation rotator comprises an input coupling waveguide, a ridge waveguide and a separation waveguide, and the input coupling waveguide, the ridge waveguide and the separation waveguide are sequentially arranged in the light propagation direction; the input coupling waveguide is used for coupling an input optical signal to the ridge waveguide, and the input optical signal comprises two polarization modes; the vertical section of the ridge waveguide is in a step shape to form a vertical asymmetric structure, and the vertical section is perpendicular to the light propagation direction. And the separation waveguide is used for separating the optical signals in the two polarization modes so as to respectively transmit the optical signals to different output ports. According to the polarization separation rotator provided by the invention, the defects that the size is difficult to further reduce and the polarization extinction ratio is reduced in the prior art are overcome, efficient polarization mode hybridization is realized by increasing the asymmetry in the vertical direction, and miniaturization of the polarization separation rotator is facilitated.

The invention provides a high-order mode filter and a preparation method thereof. The high-order mode filter comprises a substrate, a flat plate groove, a first stray light absorption region and a reflection region, wherein the substrate comprises a base, an insulating layer and a semiconductor top layer which are arranged in sequence; the flat plate grooves are arranged in the semiconductor top layer at intervals, and a ridge waveguide is formed between every two adjacent flat plate grooves; the first stray light absorption areas are distributed in the semiconductor top layer on the two sides of the ridge waveguide and are used for absorbing stray light in incident light; the reflection areas are arranged in the flat plate grooves in the two sides of the ridge waveguide, an inclination angle is formed between the length direction of the reflection areas and the light propagation direction in the ridge waveguide, the inclination angle is smaller than 90 degrees, and the reflection areas are used for reflecting light emitted from the outer sides of the reflection areas to the ridge waveguide. The stray light reflected by the side wall of the flat plate groove can be blocked to a great extent, the stray light is prevented from entering the waveguide again, and attenuation of stray light is greatly increased.

A waveguide for an optical modulator system includes multiple tapered portions, or regions, designed to couple a CMBH laser light source to a ridge modulator. Using a waveguide with different tapered portions, transmission efficiency between the CMBH light source and the ridge modulator is improved, thus allowing the optical modulator to be used in high-speed applications. Waveguide described herein may include tapered portions in which, along a single direction, include one portion that tapers to a reduced width while another portion tapers to an increased width.

An electro-optic device is described. The electro-optic device includes at least one optical material having an electro-optic effect. Further, the optical material(s) include lithium. The optical material(s) have a slab and a ridge waveguide. The slab has a top surface. The slab includes free surfaces. Each of the free surfaces is at a nonzero angle from the top surface of the slab and mitigates stress in the slab.

The invention discloses a mid-infrared laser based on three-device on-chip integration and a preparation method thereof, relates to the crossing field of a semiconductor laser technology and an optical communication technology, and solves the problem that the existing quantum cascade laser QCL technology cannot give consideration to both high modulation rate and high power. An intermediate infrared laser comprises a QCL unit, an EAM unit and an SOA unit which are sequentially arranged on a substrate. The substrate comprises a semi-insulating InP (Indium Phosphate); the QCL unit, the EAM unit and the SOA unit share the same ridge-shaped waveguide structure and grow through epitaxy butt joint. The method provided by the invention is suitable for a mid-infrared band space communication scene with high requirements on the laser modulation rate, the output power and the single-mode stability.

The utility model discloses a composite multimode waveguide structure, which belongs to the technical field of optoelectronic devices and comprises a plasmon unit made of a metal material or a material with a negative real part dielectric function. The plasmon unit is structurally characterized by comprising nanoparticles, nanowires, nanopore arrays or gradient structures; the dielectric waveguide is made of a semiconductor material with a high refractive index, and the dielectric waveguide is designed to be one of a strip-shaped waveguide, a ridge-shaped waveguide or a slit waveguide; and the substrate layer is located below the plasmon unit and the dielectric waveguide and comprises at least one low-refractive-index supporting layer, and the material system of the low-refractive-index supporting layer is one of an oxide material, a nitride material, a fluoride material or a composite substrate structure. According to the scheme, the contradiction of a plasma device and silicon photonics among mode degree of freedom, loss and process compatibility is solved.

The present invention discloses a lithium niobate thin film phase modulator heterogeneously integrated with silicon nitride, belonging to the field of integrated optical gyroscopes; comprising a substrate, a silicon dioxide cladding, a lithium niobate thin film-silicon nitride optical waveguide core layer, and a modulation electrode; wherein the optical waveguide core layer is a ridge structure, comprising a lithium niobate thin film layer, a silicon nitride layer, and a silicon nitride carrier strip, satisfying single-mode transmission conditions; the silicon nitride carrier strip constitutes a multimode interference coupler, a bending unit, and a modulation arm; the multimode interference coupler adopts a one-to-two structure with a splitting ratio close to 1:1; the ridge waveguide structure is used for light transmission, and the multimode interference coupler unit is used for light splitting; simultaneously, three modulation electrodes generate an electric field, causing the light transmitted in the two modulation arms to undergo phase changes, thereby outputting two beams of light with a certain phase difference. Polarization is achieved based on the different binding effects of the ridge waveguide on the TE mode and the TM mode, that is, the loss of the TE mode and the TM mode in the waveguide is different, achieving a high polarization extinction ratio.

A dual-polarized four-ridge horn antenna disclosed by the present invention comprises a horn section and a waveguide section, the horn section comprises a horn shell and four ridges which are located in the horn shell and have the same structure, the four ridges form a cross-shaped structure, two ridges located on the same straight line are a pair, two feeder lines are configured in the waveguide section, and the waveguide section is provided with two feed lines. The two feeder lines respectively excite the pair of ridges at the same time, so that dual polarization is realized. The two pairs of ridges are excited at the same time to realize two polarization directions at the same time, and low-frequency cut-off wavelength is effectively reduced and high-frequency cut-off wavelength is improved by means of smooth transition of the ridge waveguides, so that the bandwidth of the horn antenna is widened.

The present invention discloses a curved ridge waveguide millimeter wave radar antenna, comprising a 1-to-2 power splitter, two curved ridge waveguides, a horn, and n rectangular radiating waveguides, where n is an even number greater than or equal to 4. The n rectangular radiating waveguides are distributed along a straight line and are evenly divided into two groups of rectangular radiating waveguides. The 1-to-2 power splitter equally splits an electromagnetic wave signal generated by excitation into two electromagnetic wave signals, which are then output to two curved ridge waveguides in a one-to-one correspondence. Both curved ridge waveguides transmit the electromagnetic wave signal transmitted thereto to the n rectangular radiating waveguides. Each rectangular radiating waveguide couples the electromagnetic wave signal transmitted thereto to the horn, which radiates the electromagnetic wave signal thereto into free space. The antenna has the advantages of low loss, low side lobes on the H-plane, a wide E-plane 3dB beamwidth, and a small size. When used as an antenna unit in an antenna array, the antenna can meet the condition that each antenna unit is arranged according to half a wavelength, and is easy to process.

The invention provides a visible light modulator which is small in size and capable of high-speed driving at low voltage. An optical modulator (1) is provided with: a substrate (2); an optical waveguide layer (3) comprising lithium niobate in which a plurality of MZ-type waveguides including first and second ridge waveguides that propagate visible light are arranged in parallel; a signal electrode having an interaction portion disposed along the MZ-type waveguide; the optical modulator includes a first ridge waveguide, a second ridge waveguide, a signal electrode disposed above the first ridge waveguide, a first ground electrode disposed above the second ridge waveguide, and signal electrode lead-out portions (62R-3, 62B-3, 62G-3) connecting the signal electrode and a pad disposed at an end edge portion (S3), and a second ground electrode disposed above the first ridge waveguide and the second ridge waveguide, the signal electrode lead-out portions (62R-3, 62B-3, 62G-3) connecting the signal electrode and the pad disposed at the end edge portion (S3). And a light multiplexing unit (40) that is disposed downstream of the Mach-Zehnder waveguide and multiplexes the plurality of visible light, in which the first ground electrode, the second ground electrode, and the signal electrode lead-out unit are disposed at positions that do not overlap the light multiplexing unit in plan view.

A silicon-phase change material hetero-integrated waveguide structure includes a silicon flat plate layer and a phase change material deposited on the silicon flat plate layer. A non-volatile waveguide phase shifter includes a base layer, a hetero-integrated waveguide structure and a silicon waveguide mode spot conversion structure fixed on the base layer, two ends of the hetero-integrated waveguide structure are symmetrically connected to the silicon waveguide mode spot conversion structure; the silicon waveguide mode spot conversion structure includes two silicon waveguides with narrow-to-wide and an ridge waveguide with wide-to-narrow arranged in axial symmetry; an aluminum oxide film is covered on the phase change material, a single-layer graphene is on the aluminum oxide film, and a metal layer is on the single-layer graphene, the metal layer includes two metal electrodes. The single-layer graphene forms ohmic contact with the metal electrodes, current passes through the graphene to generate heat, the heat is conducted through the aluminum oxide film below the single-layer graphene to provide heat required for phase change of the low-loss phase change material. The phase shifter has the advantages of compact structure, low insertion loss, small driving voltage, low phase change power consumption, non-volatile phase adjustment, etc. and can be used as a core optical path regulation device in an integrated optoelectronic chip.

The invention provides a broadband horizontal polarization waveguide slot antenna array, which comprises a radiation slot layer, a slot coupling layer, a feed network layer and a standard waveguide interface, and is characterized in that the radiation slot layer is provided with 16 independent ridge waveguides, 16 V-shaped slots are cut on each ridge waveguide, each ridge waveguide is blocked by three cavity isolation walls to form four ridge waveguide sections, and each cavity isolation wall is provided with one V-shaped slot. Four V-shaped slots are distributed on each ridge waveguide section, 64 I-shaped coupling slots are formed in the slot coupling layer, the I-shaped coupling slots are located under the ridge waveguide sections, and the feed network layer adopts a flattened narrow-edge ridge waveguide design. Comprising a five-order one-to-two ridge waveguide power divider, a ridge waveguide-to-common waveguide converter, a multi-branch waveguide impedance transformer and an E-plane T-shaped joint. The antenna has the beneficial effects that the antenna is light in weight and low in profile; the antenna bandwidth is improved; the antenna structure is simple.

A silicon modulator with lateral capacitance structure includes, from bottom to top, substrate (3), dielectric layer (2), ridge waveguide (10), capacitive dielectric layer (20), first transparent electrode (108), second transparent electrode (101), first contact metal (130), second contact metal (131), third contact metal (132), fourth contact metal (133), and upper cladding layer (4). Ridge waveguide (10) includes PN junction, P-doped region (105), N-doped region (102), P+ region (106), P++ region (107), N+ region (103), and N++ region (104). First transparent electrode (108) is arranged on upper left side of capacitive dielectric layer (20), and together with capacitive dielectric layer (20), P-doped region (105), P+ region (106), and P++ region (107), forms P-region lateral capacitance structure. Second transparent electrode (101) is arranged on upper right side of capacitive dielectric layer (20), and together with capacitor dielectric layer (20), N-doped region (102), N+ region (103), and N++ region (104), forms N-region lateral capacitance structure. Silicon modulator bandwidth is enhanced according to the technical solution.

The present invention relates to an on-chip dual silicon carbide color center HOM interferometer device based on stress regulation. Using this device, a completely monolithic SiC photonic circuit can be realized. Two frequency-matched color center single-photon sources are connected to an on-chip beam splitter via a single-mode ridge waveguide, making it possible to perform two-photon interference experiments on the chip.

The embodiment of the invention provides a distributed feedback laser, relates to the technical field of lasers, and is used for solving the problem that the performance is affected by insertion of a phase shift grating. The laser comprises a ridge waveguide and feedback gratings arranged on the two sides of the ridge waveguide, each feedback grating comprises a Bragg grating and a phase shift grating inserted into the Bragg grating, the Bragg grating comprises two connecting gratings located on the two sides of the phase shift grating respectively, and each connecting grating comprises a chirp grating and a uniform grating which are connected. The uniform grating is away from the phase shift grating relative to the chirp grating. The length of grating teeth in the chirp grating is a first length, and the duty ratio is a first duty ratio; the width of a part, corresponding to the chirp grating, of the ridge waveguide is a first waveguide width; in the process of approaching the uniform grating from the phase shift grating along the first direction, at least one of the first length, the first duty ratio and the first waveguide width is gradually changed to realize grating coupling coefficient chirp of the chirp grating. The laser can be applied to the field of optical communication.

The utility model provides a terahertz wide-spectrum radiation source device based on a nonlinear crystal, which relates to the technical field of electromagnetic radiation and terahertz, and comprises a coupling prism, the bottom of the coupling prism is connected with a ridge-shaped waveguide, and the side surface of the ridge-shaped waveguide is coated with a buffer layer; the top of the ridge-shaped waveguide substrate is connected with a middle layer, and the top of the middle layer is connected with the bottom of the ridge-shaped waveguide. The terahertz wide-spectrum radiation source device has the beneficial effects that the ridge-shaped waveguide coupling prism forms the terahertz wide-spectrum radiation source device, the middle layer and the ridge-shaped waveguide substrate are arranged below the ridge-shaped waveguide, the coupling prism is attached to the ridge-shaped waveguide, the coupling prism is tightly attached to the buffer layer, pump light can be limited in the ridge-shaped waveguide to be transmitted, the operating distance of a nonlinear crystal is increased, and the effect of the nonlinear crystal is improved. And meanwhile, the loss of the terahertz waves in the transmission process is also reduced.

The application discloses a photonic device, a cross waveguide and a waveguide layer thereof. The waveguide layer comprises a flat plate sublayer, a first waveguide and a second waveguide intersecting with the first waveguide, wherein the first waveguide and the second waveguide are both ridge waveguides; the first waveguide and the second waveguide are arranged on the flat plate sublayer, and the flat plate sublayer, the first waveguide and the second waveguide are integrally formed. The application solves the technical problem of fast loss of the ridge waveguide in the related art.

The application relates to the technical field of lasers, and provides a structure and a manufacturing method of an electro-absorption modulation laser chip. The electro-absorption modulation laser chip is composed of a laser region 1, an isolation region 2 and a modulation region 3 which are coupled in sequence, and specifically, the laser region 1, the isolation region 2 and the modulation region 3 have respective ridge waveguide structures; wherein the quantum well width under the ridge waveguide structure of the modulation region 3 is larger than the quantum well width under the ridge waveguide structure of the laser region 1 by a preset value. In the application, the ridge waveguide process is adopted, the growth of an iron-doped buried layer is not needed, the failure phenomenon caused by the epitaxial steps and the iron-doped buried growth is reduced, and the application has the advantages of high yield and low cost.

A silicon-photonic optical modulator includes at least one optical input and at least one optical waveguide that is connected to the at least one optical input. The at least one optical waveguide is configured to propagate quasi-transverse-magnetic (quasi-TM) polarized light, where each of the at least one optical waveguide is configured as a rib waveguide that includes a rib arranged on a slab. The silicon-photonic optical modulator also includes at least one electrode configured to apply at least one electric field to the quasi-TM polarized light in the at least one optical waveguide. In some implementations, a height of the rib waveguide is greater than 0.85 λ / n, where λ is a free-space wavelength of light and n is a refractive index of silicon in the silicon-photonic optical modulator, and a width of the rib waveguide is greater than a thickness of the slab.

The application discloses an active flat-plate-passive ridge structure gain waveguide and a preparation method thereof. The scheme can break through the strong light field limitation, significantly increase the mode field area, and fully utilize the low-loss transmission characteristics of the ridge waveguide structure by limiting the injected ions in the active flat-plate area and guiding light only in the ridge. Moreover, the structure has excellent process friendliness and preparation economy. The two preparation technologies provided by the application are completely based on mature semiconductor planar processes, do not need to introduce complex and expensive special equipment or steps, and can be realized through core steps such as single patterning etching, thin film growth, polishing and thinning and ion implantation. The process flow is greatly simplified, which means that the preparation process has higher process tolerance and production yield and lower preparation cost. The preparation process can realize rapid large-scale production relying on the existing semiconductor manufacturing line and provide a feasible process solution for the industrialization of integrated photonic devices.

The invention discloses an ultra-compact reconfigurable light beam splitter based on reverse design, and the device comprises a multimode interference coupler which is realized based on a ridge waveguide and comprises a phase change material region, an N-type doped silicon waveguide and a P-type doped silicon waveguide, and the N-type doped silicon waveguide and the P-type doped silicon waveguide are arranged at the two sides of the phase change material region. The phase change material region is arranged on the ridge of the ridge waveguide and is obtained through reverse design; the metal electrode is used for applying voltage to the N-type doped silicon waveguide and the P-type doped silicon waveguide on the two sides of the phase change material area, so that the phase state of the phase change material in the phase change material area is changed; and the conical input waveguide and the conical output waveguide are arranged at the input end and the output end of the multimode interference coupler. The fixed light beam splitting mode of a traditional device is broken through, the light beam splitter integrates the optical regulation and control characteristics of the phase change material and the degree of freedom of a reversely designed structure, and an innovative solution with high dynamic range, low insertion loss and chip-level integration is provided for an optical interconnection system.