14 results about "Ridge waveguides" patented technology

A silicon-phase change material hetero-integrated waveguide structure includes a silicon flat plate layer and a phase change material deposited on the silicon flat plate layer. A non-volatile waveguide phase shifter includes a base layer, a hetero-integrated waveguide structure and a silicon waveguide mode spot conversion structure fixed on the base layer, two ends of the hetero-integrated waveguide structure are symmetrically connected to the silicon waveguide mode spot conversion structure; the silicon waveguide mode spot conversion structure includes two silicon waveguides with narrow-to-wide and an ridge waveguide with wide-to-narrow arranged in axial symmetry; an aluminum oxide film is covered on the phase change material, a single-layer graphene is on the aluminum oxide film, and a metal layer is on the single-layer graphene, the metal layer includes two metal electrodes. The single-layer graphene forms ohmic contact with the metal electrodes, current passes through the graphene to generate heat, the heat is conducted through the aluminum oxide film below the single-layer graphene to provide heat required for phase change of the low-loss phase change material. The phase shifter has the advantages of compact structure, low insertion loss, small driving voltage, low phase change power consumption, non-volatile phase adjustment, etc. and can be used as a core optical path regulation device in an integrated optoelectronic chip.

The application discloses an active flat-plate-passive ridge structure gain waveguide and a preparation method thereof. The scheme can break through the strong light field limitation, significantly increase the mode field area, and fully utilize the low-loss transmission characteristics of the ridge waveguide structure by limiting the injected ions in the active flat-plate area and guiding light only in the ridge. Moreover, the structure has excellent process friendliness and preparation economy. The two preparation technologies provided by the application are completely based on mature semiconductor planar processes, do not need to introduce complex and expensive special equipment or steps, and can be realized through core steps such as single patterning etching, thin film growth, polishing and thinning and ion implantation. The process flow is greatly simplified, which means that the preparation process has higher process tolerance and production yield and lower preparation cost. The preparation process can realize rapid large-scale production relying on the existing semiconductor manufacturing line and provide a feasible process solution for the industrialization of integrated photonic devices.

The invention relates to an integrated photonic circuit (10) comprising at least one waveguide (12) for guiding light and at least one coupling device (14) for coupling light into and / or out of the waveguide (12), wherein the waveguide (12) has at least one end (16) for coupling light in and / or out, wherein the waveguide (12) has a taper section (18) at its end (16), wherein the taper section (18) extends at least partially, in particular completely, in a longitudinal direction (11), wherein the waveguide (12) is designed to taper along the taper section (18) towards the end (16) of the waveguide (12), wherein the taper section (18) has a first section (20) in which the waveguide (12) is designed as a ridge waveguide, wherein the taper section (18) has a second section (22) adjoining the first section (20), in which the waveguide (12) is designed as a strip waveguide, wherein the coupling device (14) at least partially covers the taper section (18), in particular the second section (22), in particular wherein the coupling device (14) is designed to taper at least partially, in particular completely, in the longitudinal direction (11) towards the end (16) of the waveguide (12). The invention also relates to a kit consisting of at least one such integrated photonic circuit and at least one optical fiber (36).

The application discloses a waveguide device structure manufacturing method and a waveguide device structure, and relates to the technical field of waveguide device structures. The method comprises the following steps: forming a waveguide layer and a hard mask on a substrate; etching the waveguide layer through the hard mask to form a ridge-shaped waveguide pattern; using a first fluorine-containing free radical, a first nitrogen-containing free radical and a first oxygen-containing free radical to perform first processing on a first sidewall of the ridge-shaped waveguide pattern with the hard mask to remove a first protruding part; using a second nitrogen-containing free radical and a second oxygen-containing free radical to perform second processing on the first sidewall to perform surface passivation protection; the first processing and the second processing are alternately cycled for multiple times to reduce the surface roughness of the first sidewall; after the hard mask is removed, using a first hydrogen-containing free radical and a hydroxyl-containing free radical to perform third processing on the first sidewall to remove a second protruding part, and the surface roughness of the first sidewall is further reduced. The application can significantly improve the smoothness of the surface of the ridge-shaped waveguide pattern, thereby improving the key performance of the device.

The application provides a broadband slot scattering flat panel antenna applied to the field of communication systems. The antenna comprises, from top to bottom, a radome, a radiation slot layer, a coupling cavity layer and an H-T type broadband ridge waveguide feed network layer; the radiation slot layer comprises a radiation cavity, the bottom of the radiation cavity is provided with a plurality of radiation slots arranged uniformly and at intervals, and a radiation metal ridge is arranged between two adjacent rows of radiation slots; the coupling cavity layer comprises a plurality of coupling cavities, each coupling cavity corresponds to an antenna unit, each antenna unit comprises four radiation slots, the bottom center of each coupling cavity is connected with a ridge waveguide through a coupling slot, and the coupling slot is located on one side of the center of the wide side of the ridge waveguide; the H-T type broadband ridge waveguide feed network layer is internally provided with an H-T type broadband ridge waveguide feed network composed of a plurality of ridge waveguides, and a taper pin type power distribution is adopted to perform amplitude and phase weighting on input excitation signals so as to radiate out through the radiation slots. The antenna has an ultra-low profile, a lightweight design and higher radiation efficiency.

This invention discloses a millimeter-wave ultra-wideband gapped waveguide mechanical synchronous phase-shifting feed device with anisotropic pulse width modulation, belonging to the field of microwave and millimeter-wave antenna technology. The device includes a stacked top cover plate, an intermediate layer, a fixed base plate, and a movable base plate. Fixed and movable pins are arranged alternately to form four rectangular waveguide channels. When the movable base plate is translated, the width of the first channel decreases to achieve phase lead, while the width of the remaining channels increases to achieve phase delay, forming anisotropic pulse width modulation offset to counteract nonlinear phase disturbances. The intermediate layer integrates stepped transitions, cross-shaped transition ridges, and oblique ridge waveguides to achieve cross-layer broadband coupling and path compensation. The power divider is loaded with capacitive grooves and inductive steps, and the second stage uses asymmetric steps and tuning pillars to achieve tapered distribution. An electromagnetic bandgap structure is provided at the gap to suppress leakage. This invention achieves compact, low-error multi-channel synchronous phase shifting in the 32-42 GHz frequency band.

This invention relates to a photonic device (DP) comprising a hybrid waveguide capable of propagating an optical mode. The device includes an element layer (2) disposed on a support substrate (1e) via a first surface, and includes at least one ridge waveguide (2a) formed by a base flush with a second surface of the element layer (2) and at least one ridge oriented toward the support substrate (1e). A dielectric layer (1b) is disposed on and in contact with the second surface of the element layer (2). It is arranged to cover the peripheral contour (Zb) of the base of the ridge waveguide (2a) without extending over its central portion. A heterostructure (4) is disposed on the central portion (Zc) of the base of the waveguide (2a). The heterostructure (4) and the ridge waveguide (2a) together form the hybrid waveguide.

This invention provides a wide-tunable single-mode emitting semiconductor laser, comprising: a semiconductor substrate, a first linear ridge waveguide forming a first coupling cavity, and a second linear ridge waveguide forming a second coupling cavity, wherein the first coupling cavity is separated from the second coupling cavity by a gap. The first and second coupling cavities respectively include p-contacts and n-contacts for allowing laser currents I1 and I2 to be injected into the first and second coupling cavities. The first and second coupling cavities respectively include a first heating resistor and a second heating resistor, which are used to heat the first and second coupling cavities respectively when heating currents H1 and H2 are applied to them. The heating resistors are provided for heating the semiconductor substrate of the semiconductor laser to regulate the base temperature of the chip (i.e., the semiconductor substrate). T .

The application provides a high-order mode filter and a preparation method thereof. The high-order mode filter comprises a substrate, a flat plate groove, a first stray light absorption area and a reflection area. The substrate comprises a base, an insulating layer and a semiconductor top layer arranged in sequence. The flat plate groove is arranged in the semiconductor top layer at intervals, and a ridge waveguide is formed between two adjacent flat plate grooves. The first stray light absorption area is distributed in the semiconductor top layer on both sides of the ridge waveguide and is used for absorbing stray light in incident light. The reflection area is arranged in the flat plate groove on both sides of the ridge waveguide. The length direction of the reflection area has an inclination angle with the light propagation direction in the ridge waveguide, and the inclination angle is less than 90 degrees, and the reflection area is used for reflecting light incident from the outside of the reflection area to the ridge waveguide. The application can greatly block stray light reflected by the side wall of the flat plate groove, prevent the stray light from re-entering the waveguide, and greatly increase the attenuation of the stray light.

This application discloses a ridge waveguide device structure and fabrication method with improved performance, comprising: forming a waveguide layer on a substrate; partially etching the waveguide layer through a first hard mask to form a first waveguide pattern; performing a first treatment on the first sidewall of the first waveguide pattern to reduce the surface roughness of the first sidewall; after removing the first hard mask, fully etching the waveguide layers on both sides of the first waveguide pattern through a second hard mask covering the first waveguide pattern; forming a second waveguide pattern below the first waveguide pattern to form a ridge waveguide; performing a second treatment on the second sidewall of the second waveguide pattern to reduce the surface roughness of the second sidewall; and after removing the second hard mask, performing a third treatment on the first and second sidewalls to further reduce the surface roughness of the first and second sidewalls. This application can significantly improve the sidewall smoothness of the ridge waveguide, thereby improving the key performance of the device.

The application discloses a preparation method of a ridge waveguide structure and the ridge waveguide structure, and comprises the following steps: forming a first waveguide cladding layer, a waveguide layer and a hard mask on a substrate; etching the waveguide layer to form a ridge waveguide pattern through the hard mask; using first hydrogen radicals to perform first processing on the sidewall of the ridge waveguide pattern with the hard mask, so as to remove first protruding parts on the sidewall; using first hydroxyl radicals to perform second processing on the sidewall, so as to perform surface passivation protection on the sidewall; alternately performing the first processing and the second processing for multiple times, so as to reduce the sidewall roughness; removing the hard mask; using second hydrogen radicals and second hydroxyl radicals to perform third processing on the exposed surface of the ridge waveguide pattern, so as to reduce the surface roughness; and forming a second waveguide cladding layer for covering the ridge waveguide pattern. The application can significantly improve the smoothness of the surface of the ridge waveguide pattern, thereby improving the key performance of a device.

This application relates to the fields of photonics and optical communication technology, and particularly to a low-loss thin-film lithium niobate waveguide based on a hybrid etching process and its fabrication method, comprising: a substrate layer, a Z-cut thin-film lithium niobate functional layer, a dual waveguide structure, a sidewall grating, a thermoelectric heating layer, an isolation layer, an electrode system, and a protective layer. Amorphous Ag is used. 4‑ x TeS thermoelectric material, used as a heating layer, significantly improves device reliability while enhancing thermo-optical tuning efficiency. By integrating this heating layer into a Z-cut thin-film lithium niobate dual-waveguide reverse coupler, continuous and precise Bragg wavelength tuning is achieved using the thermo-optical effect, meeting the requirements of reconfigurable optical networks. Combined with hybrid etched ridge waveguides to reduce transmission loss, and thermally adiabatic tapered abutments and anti-reflection gratings to optimize spectral sidelobes and self-reflection, while leveraging the advantages of Z-cut wafers to improve mass production consistency, this solution addresses existing device problems such as untunable wavelength, poor consistency, high loss, high interference, and low heating module efficiency.

A method includes performing a first etch on a substrate, wherein the substrate includes six cross sections arranged in sequence to define five zones along a first direction, wherein the first etch forms a first protrusion region extending from the first to fifth zones and two first connecting regions on two sides of the first protrusion region; performing a second etch on the two first connecting regions to form a strip waveguide along the sixth cross section; performing a third etch on the two first connecting regions to form a rib waveguide along the third cross section; and performing a fourth etch on the two first connecting regions to form a deep-rib waveguide along the first cross section.