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Low power consumption electro-optical modulator with silicon-based cascade resonator structure

An electro-optic modulator and resonant cavity technology, which is applied in optics, instruments, clad optical fibers, etc., can solve the problems of low performance such as extinction ratio and speed, and achieve the effects of low power consumption, high speed, and increased extinction ratio

Inactive Publication Date: 2010-02-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are electro-optic modulators based on a single F-P resonator, but because the F-P resonator has only one-dimensional limitation on the light wave, the Q value of the F-P resonator is not as high as that of the microring and microdisk resonators, so the performance such as extinction ratio and speed is not high. very high

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  • Low power consumption electro-optical modulator with silicon-based cascade resonator structure
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  • Low power consumption electro-optical modulator with silicon-based cascade resonator structure

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] The electro-optic modulator provided by the present invention is made up of two Fabry-Perot (F-P) resonators 4 connected in series on an SOI substrate, and the two Fabry-Perot resonators 4 adopt a vernier type A low-power electro-optic modulator with a cascaded resonant cavity structure is formed in series in a cascaded form. The Fabry-Perot resonator 4 is composed of two Bragg gratings 3 and a ridge waveguide 1 between the two Bragg gratings, and the Bragg grating 3 is used as a reflector of the Fabry-Perot resonator 4 . In the two Bragg gratings constituting the Fabry-Perot resonator and the SOI substrate plate region 2 on both sides of the ridge waveguide between the two Bragg gratings, the heavily doped P regi...

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Abstract

The invention discloses a low power consumption electro-optical modulator with a silicon-based cascade resonator structure, which is formed by serially connecting two Fabry-Perot resonant cavities (4)manufactured on an silicon-on-insulator (SOI) substrate on an insulator, wherein the two Fabry-Perot resonant cavities (4) are serially connected by adopting a form of cursor cascade to form a low power consumption electro-optical modulator with a cascade resonator structure. Each Fabry-Perot resonant cavity (4) consists of two Bragg gratings (3) and a ridge waveguide (1) positioned between the two Bragg gratings, and the Bragg gratings (3) are taken as reflecting mirrors of the Fabry-Perot resonant cavities (4). The low power consumption electro-optical modulator greatly improves parametersof the resonant cavities such as F values, FSR, Q values and the like, ensures that the extinction ratio of the electro-optical modulator is greatly increased, needs lower power consumption for the modulation, and has quicker speed; a device has a compact structure; and the production technology is compatible with a mature microelectronic CMOS process.

Description

technical field [0001] The invention relates to the field of silicon-based optoelectronics, in particular to a silicon-based cascaded resonant cavity structure low-power electro-optic modulator that can improve the extinction ratio and response rate. Background technique [0002] As the size of microelectronic devices continues to shrink, the performance of traditional microelectronic devices is gradually approaching the physical limit. Optical interconnection is the most promising way to solve the bottleneck of electrical interconnection. An essential way of interconnection, the optical modulator is one of the important devices of optoelectronic integration and photonic integrated circuit. Due to cost and technical considerations, silicon-based materials are most likely to become a commercial optoelectronic integration platform. [0003] Electro-optic modulators made of silicon-based materials are compatible with mature CMOS processes and realize large-scale photonic integ...

Claims

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Application Information

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IPC IPC(8): G02F1/015G02B6/02
Inventor 孙阳陈少武徐学俊
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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