215results about How to "Manufacturing process compatible" patented technology

A panel structure and a manufacturing method thereof are provided. The panel structure is disposed in a display device. The panel structure includes a substrate, several first transistors and second transistors. The substrate has a display circuit and a control circuit. The first transistors are disposed at the display circuit of the substrate. Each of the first transistors has a first active layer. The second transistors are disposed at the control circuit of the substrate. Each of the second transistors has a second active layer. The materials of at least one of the first active layer and the second active layer include ZnO.

Filter for microwaves and millimetER waves, characterised in that it comprises a planar transmission medium (1) that it includes a conductor strip (3), metallic ground plane (4) and dielectric substrate (2) and in that it includes at least one split rings resonator (5a, 5b, 5c, 5d, 5e and 5f)

The invention discloses an Al2O3/AlN/GaN/AlGaN/GaN double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and a manufacturing method. The double-channel MOS-HEMT device comprises a GaN nucleating layer 9, a GaN buffer layer 8, an AlGaN lower barrier layer 7, a GaN channel layer 6, an AlN upper barrier layer 5, an Al2O3 gate dielectric layer 4, a source electrode 1, a drain electrode 3 and a gate electrode 2, wherein the GaN nucleating layer 9, the GaN buffer layer 8, the AlGaN lower barrier layer 7, the GaN channel layer 6 and the AlN upper barrier layer 5 are formed on a sapphire substrate 10 in sequence, the Al2O3 gate dielectric layer 4, the source electrode 1 and thea drain electrode 3 are formed on the AlN upper barrier layer 5, and the gate electrode 2 is formed on the Al2O3 gate dielectric layer 4. The invention is characterized in that an AlN material with good heat conductivity and greater forbidden band width is used as the upper barrier layer, so that the self heating effect of the device is reduced, and the threshold voltage of the device in a depletion mode is reduced; a depth potential well made from AlN and GaN is used for suppressing the hot electron effect under high voltage, so that the current collapse effect of the device is reduced; the strong polarization feature of the AlN material is used to increase the electron concentration in the channel and increase the saturation current and the output power of the device; and the Al2O3 material deposited by using the atomic layer deposition process is used as the gate dielectric layer, so that the leakage current of the gate electrode is reduced, and the breakdown voltage of the device is increased.

The invention discloses a flexible thin film solar cell and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a hard support plate; forming a stripping layer on the surface of the hard support plate; forming a thin film solar cell layer series on the surface of the stripping layer; forming a flexible support layer on the surface of the thin film solar cell layer series; and separating the flexible support layer and the whole thin film solar cell layer series from the hard support plate. In the invention, the flexible thin film solar cell can be manufactured directly on the surface of the hard support plate such as glass without depending on traditional flexible substrates which are high in requirements for physical and chemical characteristics and high in expense and without the complicated flexible thin film solar cell manufacturing process of firstly adhering the flexible substrate on the surface of the hard support plate and then carrying out thin film deposition, therefore, the method of the invention is a revolutionary method for directly manufacturing a large-area and internal cascade flexible thin film solar cell on the hard support plate.

A vertical pixel structure for emi-flective display and a method thereof are provided. The vertical pixel structure has a substrate, a emitting pixel unit arranged on the substrate and a reflective pixel unit arranged on the emitting pixel unit. By using the vertical pixel structure the aperture of the display can be increased, and the power consumption can be reduced as well.

The invention provides a phase change memory unit and a method for manufacturing the phase change memory unit. A memory medium layer of the phase change memory unit is a superlattice thin film structure which is composed of an Sb[x]Te[1-x] layer and a Ti[y]Te[1-y] layer, and then a stable layered (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material is obtained, wherein 0.4<=x<=0.8, 0.33<=y<=0.56, the thickness of the Sb[x]Te[1-x] layer is between 1 nm and 10 nm, and the thickness of the Ti[y]Te[1-y] layer is between 1 nm and 10 nm. The phase-change mechanism of the superlattice (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material manufactured with the method is completely different from that of a traditional Ge-Sb-Te phase change material, and thus an obtained phase change memory device has the advantages of being lower in power consumption, higher in phase change speed, higher in retentivity, longer in service life and the like.

The invention provides a display device and a display substrate thereof. The display substrate comprises a display area, a porose area, and a partition area between the display area and the porose area. The partition area is provided with at least one partition ring surrounding the porose area, and is used for partitioning an organic light-emitting material layer. The partition ring comprises at least a support portion and a partition portion. The partition portion is provided with a tensile stress layer used for applying tensile stress to the partition portion. When the organic light-emittingmaterial layer is vapor-deposited, partial section of the partition portion in the partition ring is suspended. The partitioning effect on the organic light-emitting material layer is good, and external water and oxygen can be prevented from entering the display area from the opening. In addition, the partition portion can automatically block the organic light-emitting material layer. The use oflaser burning to remove the organic light-emitting material layer around the porose area is avoided. A hot process is omitted. The spacing between the porose area and the display area is shortened. The border of the porose area is reduced. Third, the tensile stress layer can apply tensile stress to the partition portion to prevent the suspended partition portion from collapsing and falling off. The partitioning performance of the partition portion is reliable.

A simple SCM (Self Cascode MOSFET) structure to generate a sub-1V reference voltage in the SCM intermediate node. The structure requires only 2 transistors to create a temperature-compensated reference voltage. When sized correctly, the transistors in the SCM will operate both at weak, moderate or strong inversion, and in the saturation region or saturation and triode regions, providing good correspondence and low part to part variation. The following proposal innovates by operating with supply voltages on a broad variation range, from 3.6V through below 1V (sub-1V operation), with bias currents in the range of tens of nA (nano Amperes) and temperature variation smaller than ±1% from −40° C. through 85° C. This is an extremely low cost implementation (in terms of area and complexity), compatible with standard CMOS manufacturing processes, and very robust (in terms of fab-to-fab transference, technology mapping, and also well controlled part-to-part variation).

The invention provides a method for bridging electrodes of LED light-emitting units isolated by deep trenches. The method is specifically implemented for large LED chips with a plurality of light-emitting units isolated by deep trenches. The method includes steps of depositing first passivation layers; performing spin-coating for liquid insulating materials to fill the liquid insulating materials in the isolation trenches among the light-emitting units and forming a flat film on the surface of a chip; curing the liquid insulating materials at a high temperature; etching the film formed by the insulating materials so as to expose the passivation layers on surfaces of the light-emitting units and enabling surfaces, which are positioned at the isolation trenches, of the insulating materials to be flush with surfaces of the passivation layers; depositing second passivation layers to seal parts, which are positioned at the isolation trenches, of the insulating materials in the passivation layers; and etching the passivation layers and manufacturing electrode grooves; depositing metal, manufacturing the electrodes by a lift-off technology and manufacturing connecting bridges of the electrodes on upper surfaces of the passivation layers. The method has the advantages the electrode bridging yield is increased, and the method is applicable to light-emitting unit structures with rectangular, regularly trapezoidal or reversely trapezoidal cross sections, and is particularly applicable to isolation trenches with high depth-to-width ratios.

The invention, which belongs to the technical field of the non-refrigerated infrared detection, relates to a non-refrigerated infrared detection focal plane device. The device comprises a substrate structure, a support structure, and a bridge deck structure. The bridge deck structure is supported on a substrate by bridge legs and bridge piers, an infrared resonant cavity is formed between an infrared absorbed layer film and a reflecting layer. And a thermo-sensitive layer film is on a surface of the infrared absorbed layer film outside the infrared resonant cavity. According to the invention, a customary thinking employed in the invention of a present device structure is broken through; a position relation of the infrared absorbed layer film and the thermo-sensitive layer film within the bridge deck structure is inversed, so that the thermo-sensitive layer film is arranged on the surface of the infrared absorbed layer film outside the infrared resonant cavity, and thus an infrared absorptivity of the infrared detection focal plane device is increased; and therefore, a detection efficiency of the non-refrigerated infrared detection focal plane device is further improved. Furthermore, an anti-reflection film is not required by the device, so that the device structure is simplified to some extent and device cost is also reduced appropriately.

The invention discloses a memristor device and a manufacturing method thereof. The memristor device comprises a substrate, a lower electrode formed above the substrate, a memory storage layer formed above the lower electrode and an upper electrode formed above the memory storage layer, wherein the memory storage layer comprises two layers of oxide materials with different oxygen contents. The method for manufacturing the memristor device comprises the following steps of: growing a conducting material on the substrate as the lower electrode; growing the memory storage layer on the lower electrode, wherein the memory storage layer comprises two layers of oxide materials, and the oxygen contents of the two layers of oxide materials are different; and growing a conducting material on the memory storage layer as the upper electrode. The manufacturing method provided by the invention is simple, and the manufacturing technology is compatible with the traditional CMOS (Complementary Metal Oxide Semiconductors) technology and has certain application prospect in the field of memories.

The invention discloses a tunneling field effect transistor and a preparation method thereof. The transistor comprises: a semiconductor substrate, a first channel region and a second channel region, a first gate stack zone, a second gate stack zone, a first source zone, a leakage zone, a second source zone a third insulating layer and a source electrode S, wherein the first conducting layer in the first gate stack zone is connected with the second conducting layer of the second gate stack outside the channel region to form a interdigital grid; the electrodes of the first source zone and second source zone, the drain electrode in the leakage zone and the gate electrode G on the interdigital grid are formed in the third insulating layer. According to the invention, the work current of the tunneling field effect device provided in the invention is a tunneling current and the work current is a current of an MOS (Metal-Oxide-Semiconductor) field effect transistor. The driving current is substantially improved. Meanwhile, the manufacture technology is compatible with the tradition technology and the area is saved, because the interdigital structure is adopted and the first source zone plays a role in substrate lead-out.

A vertical pixel structure for emi-flective display and a method thereof are provided. The vertical pixel structure has a substrate, a emitting pixel unit arranged on the substrate and a reflective pixel unit arranged on the emitting pixel unit. By using the vertical pixel structure the aperture of the display can be increased, and the power consumption can be reduced as well.

A reflective touch display panel and a manufacturing method thereof are provided. An incident light enters the display panel through a front substrate thereof. A plurality of pixel structures and a plurality of light sensing devices are disposed on an inner surface of the front substrate. The light sensing device includes a light sensing transistor having a transparent gate electrode. The manufacturing method for the reflective touch display panel includes the following steps. A first patterned transparent conductive layer, including the transparent gate electrode and a capacitance lower electrode, is formed on the front substrate. A first patterned conductive layer, a dielectric layer, a patterned semi-conductive layer, a second patterned conductive layer and a second patterned transparent conductive layer are sequentially formed on the front substrate to respectively form the light sensing device and the pixel structure. A reflective material layer and a back substrate are. assembled on the front substrate to complete the reflective touch display panel.

A non-refrigerating film infrared focal plane array detector structure comprises a first substrate provided with reading circuits, and a second substrate provided with thermal isolation microbridge arrays and sensitive element arrays. The first substrate and the second substrate are integrally bonded. The etched second substrate serves as a pier for each thermal isolation microbridge unit in the thermal isolation microbridge arrays, and a support layer tightly attached to the top of the pier serves as a deck. The deck of each thermal isolation microbridge unit is provided with one sensitive element array. Each sensitive element array is electrically connected with the corresponding reading circuit of the first substrate through a lead electrode. A production method of the non-refrigerating film infrared focal plane array detector structure includes: preparing a pattern on a bonding surface of the first substrate, preparing the support layer, preparing the sensitive element arrays, protecting the front side of the second substrate, preparing the thermal isolation microbridge arrays, bonding the first substrate and the second substrate, removing a front protective layer of the second substrate, and connecting electrodes of the sensitive element electrode reading circuits.

The invention discloses a method for producing an organic electroluminescence device. The method comprises the followings steps: frirstly, conducting polymer or conducting polymer nano-particle composite materials are formed on the anode of a device, and are used as the hole injection layers of the device; and secondly, other functional layers and membrane electrodes of the device are produced. The conducting polymers in the hole injection layers include conducting polymers and nano-particles thereof, and the device has the characteristics of high electrical conductivity and good membrane planeness. The method can not only be used for producing the organic electroluminescence device with the advantages of high luminous efficiency and long service life, but also can be applied to the fields of backlights, luminance light panels, and the like for color LED display.

The invention provides a preparation method of a CsPbI3 thin film. The preparation method includes the following steps that the surface of a monocrystalline silicon substrate is cleaned, and the monocrystalline silicon substrate is placed in a vacuum growth room of a pulse laser deposition system after the surface is blown to be dry through nitrogen; a target material is etched through the pulse laser deposition technology, and a layer of CsPbI3 thin film grows on the surface of monocrystalline silicon; the CsPbI3 thin film is placed under an iodine steam environment to be subjected to annealing treatment, and in other words, the CsPbI3 thin film is recrystallized under the iodine steam environment; and a sample is taken out after growth ends, is cleaned with deionized water and is blown to be dry through nitrogen. The preparation method is simple, the reaction temperature is low, the reaction time is short, cost is low, and the preparation method is suitable for industrialized production; and the large-area uniform and compact CsPbI3 thin film high in crystallization quality and excellent in photoelectric property can be obtained, and application of the CsPbI3 thin film to the field of photoelectric devices such as luminescent materials and solar cells is met.

The invention discloses a reverse blocking type IGBT and a manufacturing method therefor, and belongs to the technical field of a semiconductor power device. By introducing trench emitter and trench collector structures, the reverse breakdown voltage of a device is improved without influencing the threshold voltage and switch-on of an IGBT device; the overall gate capacitance is lowered, the switching speed of the device is improved, the switching loss and driving power consumption of the device are lowered, and the compromising relation between forward switch-on voltage drop and switch-off loss of the conventional CSTBT structure is improved; the problems of current, voltage oscillation and EMI in the device starting dynamic process can be avoided, and device reliability is improved; theelectric field concentration effect at the bottom of the trench is improved, the forward breakdown voltage of the device is improved, and reliability of the device is further improved; and the currentcarrier enhancement effect at the emitter end of the device is further improved, the current carrier concentration distribution in a drift region can be improved, and compromising between forward switch-on voltage drop and switch-off loss can be further improved. The manufacturing method disclosed in the invention is compatible with the existing manufacturing process of a CSTBT device.

The present invention provides a structure for forming an optical splitting lens. Through changing the material of a lens material layer and the shape of a lens, the light splitting characteristics of different light wave ranges can be obtained, and the requirement from ultraviolet light to infrared light is satisfied. The invention also provides a method for forming an optical splitting lens, through forming different recesses with lens shapes by using crystal orientation etching in a substrate and depositing lens materials in the recesses to form lenses, various optical splitting lenses can be formed conveniently, and the method can be fully compatible with an existing integrated circuit manufacturing process.