16 results about "Growth room" patented technology

A plant growing apparatus including a light diffusion and recycling chamber for growing plants. The plant growing apparatus includes interior sides which define a plant growing space. A plurality of light emitting diodes may be mounted directly or indirectly on each interior side, wherein the light emitting diodes may be configured to emit light into the plant growing space such that each side of a plant disposed in the growing space would receive substantially similar light levels from the bottom to the top of the plant. The plant growing apparatus includes a transport and positioning system comprising to allow selective movement of the mobile plant container to engage with or disengage from the growing chamber and to guide movement of the mobile plant container along a pathway from outside the growing chamber to inside the growing chamber.

The present invention relates to a polygonal, underground, and protected prismatic plant factory for the production of vegetables, characterized by comprising a support structure that defines a polygonal base of "n" sides, configured to fix and vertically support a cultivation panel, which together define a polygonal plant growth chamber; wherein each cultivation panel comprises on its inner face, multiple levels of plant supports and growth, with a hydroponic irrigation system; said base centrally comprises an automated system for regulating the distance of panels with LED lighting means for providing light to the plants, configured to extend or retract from the respective inner faces of the cultivation panels, and wherein between the automated distance regulation system and the plurality of cultivation panels there is a service corridor;further comprising a central control and processing unit configured to control and operate a user interface, a plurality of sensors such as temperature, relative humidity, luminosity, flow, water level, distance of lighting panels and machine vision cameras; actuators for controlling the LED luminaires, at least one irrigation pump, temperature regulation means, the linear stroke actuator and an electrical power supply for the operation of the system as a whole.

An ingot puller apparatus includes a housing defining a growth chamber and a growth chamber outlet, an isolation valve having a first valve end connected to the growth chamber outlet and a second valve end, an ingot receiving vessel defining an ingot receiving chamber and a receiving chamber inlet at a receiving vessel end, a clamp including a clamp base connected to the second valve end. The clamp includes at least one clamping finger for releasably connecting the ingot receiving vessel end to the clamp base. The at least one clamping finger is pivotably connected to the clamp base to pivot relative to the clamp base and into engagement with the receiving vessel end to connect the receiving vessel end to the clamp base.

The application discloses a gallium oxide LPCVD epitaxial reaction chamber and a gallium oxide film preparation method, and the reaction chamber comprises a metal outer cavity and a growth chamber which are arranged in a nested mode; a gallium source furnace is arranged at the bottom center of the growth chamber, and metallic gallium is arranged in the gallium source furnace; resistance wires are arranged on the outside of the gallium source furnace and between the metal outer cavity and the growth chamber, so that the growth chamber and the gallium source furnace can be heated to a preset reaction temperature; a spraying device and multiple sets of transmission assemblies are arranged at the top of the growth chamber, and the multiple sets of transmission assemblies are uniformly arranged around the periphery of the spraying device; the spraying device is connected with multiple gas inlet pipes, and is used for conveying process-required gas; and the transmission assemblies are used for adsorbing a substrate and driving the substrate to rotate in the growth chamber. The application has the characteristics of simple principle, convenient operation, high reliability and the like; a gas curtain is formed by inert gas, so that the premature mixing reaction of gallium vapor and an oxygen source is avoided, process gas loss and pre-reaction are reduced, process raw material utilization efficiency is effectively improved, cost is reduced, and epitaxial reaction quality is improved.

A cranial remodeling orthosis (CRO) device for shaping an infant's deformed head shape as the infant's head grows includes an interior surface configuration based upon a modified shape derived from the deformed head shape. The interior surface comprises hold areas to restrain growth of said infant's head. The hold locations and amounts are determined from the modified shape. The interior surface also comprises one or more second areas providing growth room for the infant's head. The second areas are determined from the modified shape. At least one of the second areas is configured to provide extra growth room for the infant's head.

The application discloses a single crystal growth device and method capable of controlling melt dropping mode, and belongs to the technical field of semiconductor material preparation. The single crystal growth device comprises: a heat preservation layer, comprising an upper heat preservation layer and a lower heat preservation layer, wherein the upper heat preservation layer is provided with a through hole; a growth chamber located in the heat preservation layer; a heat insulation plate with a through hole, which divides the growth chamber into two parts; a heating body arranged above the heat insulation plate, which is heated by an external induction coil; a supporting column arranged below the growth chamber, which is used for supporting a seed crystal and controlling the lifting of the seed crystal; and an adjustable feeding structure, which is used for making raw material melt drop on the surface of the seed crystal and controlling the dropping amount and frequency of the raw material melt. The application adopts the adjustable feeding structure, can realize accurate adjustment of the dropping amount of the raw material melt, can accurately control the dropping frequency of the raw material melt, and meets the growth process requirements of different single crystal growth processes or the same single crystal in different growth stages. The adjustable feeding mode can effectively improve the quality and efficiency of single crystal growth and reduce crystal defects caused by uncontrollable feeding.

A cranial remodeling orthosis (CRO) device for shaping an infant's deformed head shape as the infant's head grows includes an interior surface configuration based upon a modified shape derived from the deformed head shape. The interior surface comprises hold areas to restrain growth of said infant's head. The hold locations and amounts are determined from the modified shape. The interior surface also comprises one or more second areas providing growth room for the infant's head. The second areas are determined from the modified shape. At least one of the second areas is configured to provide extra growth room for the infant's head. Trimlines are provided and the trimlines are used to define the second areas.

A method of manufacturing a model for manufacturing a custom cranial remodeling orthosis device for an infant's deformed head includes the steps of receiving a head shape digital file corresponding to the deformed head and processing the head shape digital file to generate a modified shape data file. The modified shape defines hold areas on the deformed head where head growth is to be constrained and at least one growth area where head growth is to occur. The method includes processing the modified shape digital file to produce an extra growth room shape data file comprising extra growth room contiguous to the growth area and utilizing the extra growth room shape data file to manufacture the model.

A cranial remodeling orthosis (CRO) device for shaping an infant's deformed head shape as the infant's head grows includes an interior surface configuration based upon a modified shape derived from the deformed head shape. The interior surface comprises hold areas to restrain growth of said infant's head. The hold locations and amounts are determined from the modified shape. The interior surface also comprises one or more second areas providing growth room for the infant's head. The second areas are determined from the modified shape. At least one of the second areas is configured to provide extra growth room for the infant's head.

A method of manufacturing a custom cranial remodeling orthosis device for an infant's deformed head includes the step of receiving a head shape digital file corresponding to the deformed head. The method also includes processing the head shape digital file to generate a modified shape data file. The modified shape defines hold areas on the deformed head where head growth is to be constrained and growth areas where head growth is to occur. The method further includes processing the modified shape digital file to produce an extra growth room shape data file comprising one or more extra growth room areas contiguous with corresponding one or more of the growth areas and utilizing trim lines to further define the extra growth room.

A method of manufacturing a custom cranial remodeling orthosis device for an infant's deformed head includes the step of receiving a head shape digital file corresponding to the deformed head. The method also includes processing the head shape digital file to generate a modified shape data file. The modified shape defines hold areas on the deformed head where head growth is to be constrained and growth areas where head growth is to occur. The method further includes processing the modified shape digital file to produce an extra growth room shape data file comprising one or more extra growth room areas contiguous with corresponding one or more of the growth areas. The method further includes utilizing the extra growth room head shape data file to manufacture a modified shape with extra growth room and utilizing the modified shape with extra growth room to manufacture said custom cranial remodeling orthosis device.

A method of manufacturing a custom cranial remodeling orthosis device for an infant's deformed head includes the step of receiving a head shape digital file corresponding to the deformed head. The method also includes processing the head shape digital file to generate a modified shape data file. The modified shape defines hold areas on the deformed head where head growth is to be constrained and growth areas where head growth is to occur. The method further includes processing the modified shape digital file to produce an extra growth room shape data file comprising one or more extra growth room areas contiguous with corresponding one or more of the growth areas. The method further includes utilizing the extra growth room head shape data file to manufacture a modified shape with extra growth room and utilizing the modified shape with extra growth room to manufacture said custom cranial remodeling orthosis device.

A method of manufacturing a model for manufacturing a custom cranial remodeling orthosis device for an infant's deformed head includes the steps of receiving a head shape digital file corresponding to the deformed head and processing the head shape digital file to generate a modified shape data file. The modified shape defines hold areas on the deformed head where head growth is to be constrained and at least one growth area where head growth is to occur. The method includes processing the modified shape digital file to produce an extra growth room shape data file comprising extra growth room contiguous to the growth area and utilizing the extra growth room shape data file to manufacture the model.

The application relates to a compact molecular beam epitaxy thin film growth device and a method thereof, and belongs to the technical field of vacuum thin film deposition. The device comprises a growth chamber, a sample transfer chamber and a vacuum pumping system. The growth chamber adopts a compact design, reduces the configuration requirement of the vacuum pumping system, and only needs a small molecular pump to make the cavity vacuum degree optimal in a short time, the sample transfer speed is fast, and the cost is significantly reduced; the sample transfer chamber is connected with an angular valve through a bellows to draw a vacuum pumping device, so that the risk of damage of the vacuum pumping device is reduced; an ultrahigh temperature heating table heated by an electron beam is arranged in the growth chamber, the working distance and length of a filament are adjusted to meet the processing requirements of different samples, the highest working temperature of the sample is increased to 1600 DEG C, and rapid temperature rise and fall of more than 100 DEG C / s can be realized; meanwhile, a plurality of evaporation source installation openings are reserved in the side wall of the growth chamber, so that the functional flexibility and material compatibility of the device are improved. The application has the advantages of high performance, high flexibility, low cost and easy maintenance.

A controlled environment agriculture system including multiple environmental grow zones through which plants and / or lighting or other equipment that influence environmental equipment are cycled during the growth phase of farm production. In one implementation, the system includes multiple grow zones through which plants are cycled during the growth phase of farm production. The system may include a first environmentally-controlled growing chamber, a second environmentally-controlled growing chamber, and one or more interfaces to allow a conveyance mechanism to transfer grow containers between the chambers. Each growth chamber may include environmental control systems, and associated sensors, for regulating at least one environmental condition, such as air temperature, airflow speed, relative air humidity, and ambient carbon dioxide gas content.