57 results about "Growth room" patented technology

The invention discloses a growth device and method suitable for mass production of crystals by a fluxing agent method / liquid phase method. The growth method comprises the following steps: putting a seed crystal and a liquid phase growth raw material into a first growth container, putting the seed crystal into a second growth container, keeping the temperature of a first temperature zone at a first temperature T1, keeping the temperature of a second temperature zone at a second temperature T2, keeping the temperature of a third temperature zone at a third temperature T3, other growth conditions required by crystal growth are provided in the growth chamber; and rotating the rotary lifting frame to drive the second growth container and the seed crystal carried by the second growth container to rotate along a selected rotating track, so that the second growth container and the seed crystal carried by the second growth container are repeatedly transferred between the first temperature zone and the second temperature zone and are repeatedly immersed into the liquid phase growth raw material in the first growth container. The method can be used for industrially producing high-quality single crystals such as gallium nitride with different sizes in batches, and the production efficiency and quality are improved.

An ingot puller apparatus for producing a single crystal ingot includes a housing defining a growth chamber and a growth chamber outlet, a crucible positioned in the growth chamber for containing a melt of semiconductor material, a cooling jacket positioned in the growth chamber between the crucible and the growth chamber outlet, the cooling jacket defining a cooling passage having an inlet proximate the crucible and an outlet proximate the growth chamber outlet, a puller positioned to contact a seed crystal with a surface of the melt and pull the single crystal ingot from the melt and through the cooling passage, and an actuator connected to the cooling jacket and operable to move the cooling jacket in the growth chamber to control a cooling profile of the single crystal ingot.

A plant growing apparatus is provided that comprises a transport and positioning system, the transport and positioning system comprising a mobile plant container with a first set of wheels configured to allow selective movement of the mobile plant container to engage with or disengage from the growing chamber; and a track assembly configured to guide movement of the mobile plant container along a pathway from outside the growing chamber to inside the growing chamber.

The invention belongs to the technical field of temperature control, and particularly relates to an intelligent temperature control method for an edible mushroom cultivation growth room, which comprises the following steps of: judging temperature abnormity by combining a comprehensive evaluation function of an instantaneous overrun proportion and a standard deviation, and determining a regulation priority according to the temperature abnormity, so that the conversion from average temperature control to abnormal region priority regulation is realized; a shelf two-dimensional temperature distribution diagram is constructed, gradient calculation is carried out, a high-temperature area and the orientation thereof are accurately positioned, the deflection direction and angle of a guide plate are directly controlled through coordinate transformation and nonlinear mapping, cold air flow preferentially flows to the high-temperature area, the problem of uneven horizontal and vertical temperature caused by a three-dimensional cultivation shelf is effectively solved, and the quality of the cultivation shelf is improved. Temperature regulation and control effect verification is intelligently fused with the mycelial growth speed conformity and the fruiting uniformity of the edible mushrooms, the growth conformity is quantified through image analysis, graded early warning is performed based on a secondary verification result, and a complete intelligent closed-loop control system is formed.

A hydroponic system for optimizing a growing environment is disclosed. The system includes a growth chamber, with one or more growing racks disposed in therein. An air unit is configured to force air into a first end wall and a second end wall on opposite sides of the growth chamber. An exhaust fan is disposed on a top wall and generally centered with respect to the growth chamber. The exhaust fan is configured to draw the forced air out of the growth chamber. A controller controls the make-up air unit and the exhaust fan to achieve a desired vapor pressure deficit.

A misting device for aeroponically cultivating plants in a growing chamber provided with fluid in a water reservoir, comprising: an ultrasonic atomization transducer (UAT) configured to generate a misting spray in the presence of fluid; and a wicking means configured to transport fluid from the water reservoir by capillary action to the ultrasonic atomization transducer, when the lower end of the wicking means is disposed in contact with the water reservoir. Also disclosed is a growing system for aeroponically cultivating plants comprising: a growing chamber for containing the plants, and provided with a water reservoir containing fluid; and misting devices. The misting devices are oriented such that the respective misting sprays interact with each other to create an ultra-fine mist inside the growing chamber. In some aspects, the water reservoir may further comprise nanobubbles to maintain elevated dissolved oxygen levels and improve root-zone oxygenation.

A plant growing apparatus including a light diffusion and recycling chamber for growing plants. The plant growing apparatus includes interior sides which define a plant growing space. A plurality of light emitting diodes may be mounted directly or indirectly on each interior side, wherein the light emitting diodes may be configured to emit light into the plant growing space such that each side of a plant disposed in the growing space would receive substantially similar light levels from the bottom to the top of the plant. The plant growing apparatus includes a transport and positioning system comprising to allow selective movement of the mobile plant container to engage with or disengage from the growing chamber and to guide movement of the mobile plant container along a pathway from outside the growing chamber to inside the growing chamber.

The invention provides a phosphorus recovery processing system and a recovery processing method thereof. During recovery processing, cooling equipment is communicated with a growth chamber of molecular beam epitaxy equipment, so that the pressure of the cooling equipment is lower than atmospheric pressure, and a phosphorus material in the growth chamber is driven into the cooling equipment through baking; isolating the growth chamber from the cooling equipment, introducing heated nitrogen into the cooling equipment, purging phosphorus-containing gas in the cooling equipment, and discharging the phosphorus-containing gas outwards; phosphorus-containing gas is conveyed to a first treatment main body of the treatment equipment and is subjected to cooling, hydrogen peroxide treatment, copper sulfate treatment, potassium permanganate treatment and inspection treatment in sequence, and finally waste liquid is discharged to a first neutralizing tank for alkaline neutralization treatment. Through the configuration, the safety and the treatment efficiency of phosphorus recovery treatment are remarkably improved.

The present invention relates to a polygonal, underground, and protected prismatic plant factory for the production of vegetables, characterized by comprising a support structure that defines a polygonal base of "n" sides, configured to fix and vertically support a cultivation panel, which together define a polygonal plant growth chamber; wherein each cultivation panel comprises on its inner face, multiple levels of plant supports and growth, with a hydroponic irrigation system; said base centrally comprises an automated system for regulating the distance of panels with LED lighting means for providing light to the plants, configured to extend or retract from the respective inner faces of the cultivation panels, and wherein between the automated distance regulation system and the plurality of cultivation panels there is a service corridor;further comprising a central control and processing unit configured to control and operate a user interface, a plurality of sensors such as temperature, relative humidity, luminosity, flow, water level, distance of lighting panels and machine vision cameras; actuators for controlling the LED luminaires, at least one irrigation pump, temperature regulation means, the linear stroke actuator and an electrical power supply for the operation of the system as a whole.

The invention relates to a growing unit (10) for living organisms. the system comprises a growing chamber (100) having a growing space (101) inside the growing chamber 5 (100), movable growing containers (60), the grooving containers being arranged to receive one or more living organisms, a support system (40) comprising vertically superposed platforms (42), the platforms (42) being arranged to support the movable growing containers (60) 10 inside the growing chamber (100), conditioning modules (50) configured provide conditioning medium towards one or more growing containers (60) supported to the vertically superposed platforms (42) for conditioning living organisms; and a transport system (20, 22, 24, 25, 27) arranged to move 15 the growing containers (60) inside the growing chamber (100) to and from the platforms (42).

Disclosed herein is an apparatus for producing a single crystal, the apparatus comprising: a furnace wherein the furnace comprises a furnace wall, a furnace substrate, and a furnace lid; the furnace wall is arranged between the furnace base plate and the furnace cover; the growth chamber comprises an outer pipe, a growth chamber bottom plate and a growth chamber top plate; wherein the furnace lid has an opening through which the growth chamber protrudes, and wherein the growth chamber operates to contain a crucible containing a melt for producing a single crystal; a pull rod contacting the melt to produce an ingot; and a conduit disposed between the furnace wall and the outer tube of the growth chamber; wherein the conduit is operative to transport an inert gas through the furnace to heat the inert gas and deposit the heated inert gas into the growth chamber.

An ingot puller apparatus includes a housing defining a growth chamber and a growth chamber outlet, an isolation valve having a first valve end connected to the growth chamber outlet and a second valve end, an ingot receiving vessel defining an ingot receiving chamber and a receiving chamber inlet at a receiving vessel end, a clamp including a clamp base connected to the second valve end. The clamp includes at least one clamping finger for releasably connecting the ingot receiving vessel end to the clamp base. The at least one clamping finger is pivotably connected to the clamp base to pivot relative to the clamp base and into engagement with the receiving vessel end to connect the receiving vessel end to the clamp base.

The application relates to a preparation method of an upright graphene nanorod, the upright graphene nanorod, application and concentration detection method, which comprises the following steps: placing a substrate in a growth chamber, then heating the substrate to T1, wherein 500 DEG C <= T1 <= 600 DEG C; opening a radio frequency plasma source, and introducing methane into the growth chamber to grow upright graphene on the substrate for the first time; closing the radio frequency plasma source, and stopping the introduction of methane into the growth chamber; heating the substrate to T2, wherein 620 DEG C <= T2 <= 660 DEG C; again opening the radio frequency plasma source, introducing methane and ammonia into the growth chamber to grow upright graphene on the substrate for the second time, and further obtaining the upright graphene nanorod.

In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.

Processes, systems, and methods for producing combustible gas from wet biomass are provided. In one aspect, for example, a process for generating a combustible gas from a wet biomass in a closed system is provided. Such a process may include growing a wet biomass in a growth chamber, moving at least a portion of the wet biomass to a reactor, heating the portion of the wet biomass under high pressure in the reactor to gasify the wet biomass into a total gas component, separating the gasified component into a liquid component, a non-combustible gas component, and a combustible gas component, and introducing the liquid component and non-combustible gas component containing carbon dioxide into the growth chamber to stimulate new wet biomass growth.

The present invention provides a chemical vapor deposition (CVD) apparatus, comprising: a sample preparation chamber, an operation chamber, a reaction chamber, and a sampling chamber. The sample preparation chamber is adapted to provide a space for placing trays loaded with substrate wafers; the operation chamber comprises: a manipulator and an air trap, wherein the manipulator is adapted to grab the trays in the sample preparation chamber and transport them to the corresponding reaction chamber; the air trap is adapted to exhaust the gas entering the operation chamber; the reaction chamber comprises: a plurality of growth chambers and a transfer chamber, wherein the plurality of growth chambers are adapted to provide reaction spaces for growing corresponding epitaxial layers; the transfer chamber is adapted to provide temporary storage space for the plurality of trays when the corresponding epitaxial layers are grown simultaneously in the plurality of growth chambers; the sampling chamber is adapted to place trays loaded with wafers after the reaction is completed; the operation chamber is configured to be located at the center of the CVD apparatus, and the other chambers are configured to be located around the operation chamber; the operation chamber and the other chambers are connected via valves.

An ingot puller apparatus for producing a single crystal ingot includes a housing defining a growth chamber and a growth chamber outlet, a crucible positioned in the growth chamber for containing a melt of semiconductor material, a cooling jacket positioned in the growth chamber between the crucible and the growth chamber outlet, the cooling jacket defining a cooling passage having an inlet proximate the crucible and an outlet proximate the growth chamber outlet, a puller positioned to contact a seed crystal with a surface of the melt and pull the single crystal ingot from the melt and through the cooling passage, and an actuator connected to the cooling jacket and operable to move the cooling jacket in the growth chamber to control a cooling profile of the single crystal ingot.

The application discloses a gallium oxide LPCVD epitaxial reaction chamber and a gallium oxide film preparation method, and the reaction chamber comprises a metal outer cavity and a growth chamber which are arranged in a nested mode; a gallium source furnace is arranged at the bottom center of the growth chamber, and metallic gallium is arranged in the gallium source furnace; resistance wires are arranged on the outside of the gallium source furnace and between the metal outer cavity and the growth chamber, so that the growth chamber and the gallium source furnace can be heated to a preset reaction temperature; a spraying device and multiple sets of transmission assemblies are arranged at the top of the growth chamber, and the multiple sets of transmission assemblies are uniformly arranged around the periphery of the spraying device; the spraying device is connected with multiple gas inlet pipes, and is used for conveying process-required gas; and the transmission assemblies are used for adsorbing a substrate and driving the substrate to rotate in the growth chamber. The application has the characteristics of simple principle, convenient operation, high reliability and the like; a gas curtain is formed by inert gas, so that the premature mixing reaction of gallium vapor and an oxygen source is avoided, process gas loss and pre-reaction are reduced, process raw material utilization efficiency is effectively improved, cost is reduced, and epitaxial reaction quality is improved.

The invention discloses a production device and a production method of a single-walled carbon nanotube. The device comprises a water gas preparation chamber, a quenching growth chamber, a cyclone separation chamber and a collection chamber which are hermetically connected, the water gas preparation chamber comprises at least one independent cavity; the rear end of the chamber is connected with the quenching growth chamber, and the rear end of the quenching growth chamber is connected with the collecting chamber through the cyclone separator; wherein a movable plasma gun is arranged in each cavity, a material containing box is arranged at the bottom of each cavity, and materials in the material containing boxes are gasified through high-temperature heat flow generated by the plasma guns; the plasma gun is further connected with gas modulation equipment, and gasification products are adjusted by adjusting gas composition output by the gas modulation equipment. Continuous operation of the electric arc can be achieved by supplementing raw materials to the bottom of the cavity, the defect that an electric arc gun is short in service life is overcome, the automation degree is high, and the conversion rate is high.

An ingot puller apparatus for producing a single crystal ingot includes a housing defining a growth chamber and a growth chamber outlet, a crucible positioned in the growth chamber for containing a melt of semiconductor material, a cooling jacket positioned in the growth chamber between the crucible and the growth chamber outlet, the cooling jacket defining a cooling passage having an inlet proximate the crucible and an outlet proximate the growth chamber outlet, a puller positioned to contact a seed crystal with a surface of the melt and pull the single crystal ingot from the melt and through the cooling passage, and an actuator connected to the cooling jacket and operable to move the cooling jacket in the growth chamber to control a cooling profile of the single crystal ingot.

A cranial remodeling orthosis (CRO) device for shaping an infant's deformed head shape as the infant's head grows includes an interior surface configuration based upon a modified shape derived from the deformed head shape. The interior surface comprises hold areas to restrain growth of said infant's head. The hold locations and amounts are determined from the modified shape. The interior surface also comprises one or more second areas providing growth room for the infant's head. The second areas are determined from the modified shape. At least one of the second areas is configured to provide extra growth room for the infant's head.

The invention relates to a preparation method of a vertical graphene nanorod, the vertical graphene nanorod, application and a concentration detection method, and the preparation method comprises the following steps: placing a substrate in a growth chamber, and then heating the substrate to T1 (500 DEG C < = T1 < = 600 DEG C); starting a radio frequency plasma source, and introducing methane into the growth chamber so as to grow upright graphene on the substrate for the first time; turning off the radio frequency plasma source, and stopping introducing methane into the growth chamber; the substrate is heated to T2, and T2 is larger than or equal to 620 DEG C and smaller than or equal to 660 DEG C; and starting the radio frequency plasma source again, and introducing methane and ammonia gas into the growth chamber so as to grow upright graphene on the substrate for the second time, thereby obtaining the upright graphene nanorod.

The invention relates to flower-cluster-shaped vertical graphene, a flower-cluster-shaped vertical graphene heterojunction, a preparation method and application, and the preparation method comprises the following steps: placing a substrate in a growth chamber, and vacuumizing the growth chamber; heating the substrate to T2, then starting a plasma source and introducing methane and hydrogen into the growth chamber so as to grow a three-dimensional graphene matrix on the substrate; after the growth of the three-dimensional graphene matrix is finished, turning off the plasma source, turning off the methane and the hydrogen, and controlling the temperature of the substrate to T3; after the temperature of the substrate is T3, the plasma source is started again, and ammonia gas and methane are introduced into the growth chamber, so that the three-dimensional graphene matrix further grows and is converted into flower-cluster-shaped upright graphene; wherein in the process of converting the three-dimensional graphene matrix into the flower-cluster-shaped upright graphene, the flow ratio of the ammonia gas to the methane is (1: 4)-(1: 6).

The embodiments of the present invention disclose a method for cultivating mycelium in a controlled environment including loading sterile substrate into sealed growth chambers and initializing an artificial intelligence (AI)-controlled system to manage environmental parameters. The method involves regulating oxygenation and temperature using sensor feedback, agitating the substrate while delivering nutrients, and continuously monitoring growth conditions. The AI system dynamically adjusts environmental settings based on real-time and historical data to optimize mycelial development. Upon reaching a predetermined growth threshold, the mycelium is harvested and transferred for further processing. The chambers are then sterilized and prepared for the next cultivation cycle. This method enables consistent, scalable production of high-quality mycelial biomass.

The invention discloses multi-element thermal resistance evaporation equipment which comprises a growth chamber and a vacuumizing device arranged on the growth chamber, the growth chamber is connected with an oxygen source, and the growth chamber is provided with a sample table, an electronic gun and an evaporation source; the sample table comprises a substrate placement disc, the substrate placement disc is rotationally connected with the growth chamber, and an upper heating disc assembly and a lower heating disc assembly are arranged on the upper portion and the lower portion of the substrate placement disc correspondingly. And a single-layer film, a multi-layer film, a monometal film, a compound film and the like can be prepared. The equipment adopts a single-cavity door to take and replace samples, so that the reliability and the stability of the equipment are improved.

The invention belongs to the technical field of mushroom stick recovery, and particularly relates to an artificial cultivation method for cultivating collybia albuminosa based on pleurotus nebrodensis waste, which comprises the following steps: recovering original mushroom sticks after pleurotus nebrodensis is harvested, and supplementing water to the matrix of the original mushroom sticks to form new mushroom sticks; sterilizing the new mushroom sticks; inoculating strains of termitomyces albuminosus to the mushroom sticks; moving the mushroom sticks into a spawn running room for spawn running; after spawn running is completed, fungus bags on the fungus sticks are stripped off, the fungus sticks are placed on the ground of a growth room, the inoculation positions of the fungus sticks are arranged upwards, and the fungus sticks are covered with covering soil with the thickness of 3-5 cm; performing ventilation, illumination and temperature and humidity management on the growth room, performing moisture management on the covering soil in a spraying form, and harvesting after fruiting; after harvesting, the surface of the covering soil is cleaned, water spraying is stopped for 2-3 days, then the step S6 is repeated, and cultivation of the next crop of collybia albuminosa is carried out, according to the planting method, mushroom sticks of pleurotus nebrodensis can be recycled, the productivity is increased, and the planting cost is effectively saved.

According to the invention there is provided a controlled environment production facility, including: a climate controlled growing chamber, and an absorption chiller. The climate controlled growing chamber includes artificial lighting and at least one cooling and dehumidification unit. The cooling and dehumidification unit is supplied with chilled water from the absorption chiller.

The application discloses a single crystal growth device and method capable of controlling melt dropping mode, and belongs to the technical field of semiconductor material preparation. The single crystal growth device comprises: a heat preservation layer, comprising an upper heat preservation layer and a lower heat preservation layer, wherein the upper heat preservation layer is provided with a through hole; a growth chamber located in the heat preservation layer; a heat insulation plate with a through hole, which divides the growth chamber into two parts; a heating body arranged above the heat insulation plate, which is heated by an external induction coil; a supporting column arranged below the growth chamber, which is used for supporting a seed crystal and controlling the lifting of the seed crystal; and an adjustable feeding structure, which is used for making raw material melt drop on the surface of the seed crystal and controlling the dropping amount and frequency of the raw material melt. The application adopts the adjustable feeding structure, can realize accurate adjustment of the dropping amount of the raw material melt, can accurately control the dropping frequency of the raw material melt, and meets the growth process requirements of different single crystal growth processes or the same single crystal in different growth stages. The adjustable feeding mode can effectively improve the quality and efficiency of single crystal growth and reduce crystal defects caused by uncontrollable feeding.

A plant growing apparatus is provided that comprises a transport and positioning system, the transport and positioning system comprising a mobile plant container with a first set of wheels configured to allow selective movement of the mobile plant container to engage with or disengage from the growing chamber; and a track assembly configured to guide movement of the mobile plant container along a pathway from outside the growing chamber to inside the growing chamber.

In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.