2203 results about "Seed crystal" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention relates to a czochralski method-based crystal growth interface shape detection method and device. The method comprises the steps that: a seed crystal temperature T and an interface electromotive force U at the same time in a crystal growth process are collected, and a T-U curve of the interface electromotive force U changing with the seed crystal temperature T is obtained; the change trend of the shape of a crystal growth interface in real time is judged by observing the deviation between the T-U curve and a reference line, wherein the reference line is a straight line passing through the starting point of the T-U curve, and the slope of the straight line is the Seebeck coefficient of the crystal. The invention also relates to a device used by the method. The detection method provided by the invention can detect the change trend of the shape of the crystal growth interface in real time in the crystal growth process, and can be applied to Czochralski method growth equipment for various single crystals such as lithium niobate, lithium tantalate, sapphire, yttrium aluminum garnet and the like.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The invention discloses a high-stability layered oxide sodium-ion battery positive electrode material and a preparation method thereof.The high-stability layered oxide sodium-ion battery positive electrode material comprises a layered oxide matrix and a surface coating layer, a sodium source, a nickel source, a manganese source, a lithium source and a magnesium source are mixed according to the stoichiometric ratio, a pre-sintered product is heated to 850-950 DEG C at the speed of 0.5-2 DEG C / min to be calcined, and the high-stability layered oxide sodium-ion battery positive electrode material is obtained. The calcined product, lithium phosphate and aluminum nitrate are subjected to ball milling and mixing in a citric acid solution with the pH value of 3-5 according to the mass ratio of 1: (0.005-0.03): (0.002-0.02), and the capacity retention ratio of the battery is larger than or equal to 88% after 500 times of circulation under the voltage range of 2.0-4.0 V and the multiplying power of 0.5 C. The comprehensive protection from the bulk phase to the interface is realized by triple doping and gradient coating, and the cycle life is prolonged by two times. Interlayer spacing expansion and coating layer ion conduction cooperate to reduce polarization, and the applicable temperature range is widened to-30 DEG C to 60 DEG C. Seed crystal induction and segmented sintering ensure batch consistency, and the method is suitable for large-scale production. Cheap Fe / Mn is adopted to replace part of Ni, and the material cost is reduced by 40% compared with similar products.

The utility model relates to the technical field of single crystal preparation by a liquid phase epitaxy method, in particular to a leading forced convection introducing device for single crystal growth by a resistance heating LPE method, which comprises a graphite crucible and a graphite heating component arranged on the outer side of the graphite crucible, one end of the graphite seed crystal rod extends into the graphite crucible and is connected with the graphite seed crystal support; the seed crystal is adhered to the bottom surface of the graphite seed crystal support; the graphite annular turbofan is arranged in the graphite crucible; the graphite annular turbofan is connected with the graphite seed rod through a jackscrew clamp; the other end of the graphite seed crystal rod is externally connected with a seed crystal lifting and rotating mechanism; and the graphite seed crystal rod drives the seed crystal and the graphite annular turbofan to do lifting and rotating motion. According to the device, the influence of adverse convection on the whole flow field is weakened, and the controllability of the whole flow field can be improved; and meanwhile, an ideal temperature field for growing high-quality silicon carbide crystals in the growth cavity is ensured.

The invention provides an SSZ-13 molecular sieve as well as a preparation method and application thereof, the preparation method comprises the following steps: mixing activated silica-alumina minerals, SSZ-13 seed crystals, a silicon source, a template agent and a second alkali source to obtain dry glue, and then carrying out crystallization treatment on the dry glue in the presence of water vapor to obtain the SSZ-13 molecular sieve. According to the preparation method, a solvent is not adopted, a small amount of deionized water is used for providing a steam phase, the utilization rate of the raw materials can be increased, the high solid yield is obtained, the loss of a solid phase is reduced, no alkaline wastewater is generated, and the synthesis cost of the SSZ-13 molecular sieve is remarkably reduced. When the SSZ-13 molecular sieve prepared by the method is used for CO2 / CH4 adsorption separation, the SSZ-13 molecular sieve has relatively high separation selectivity.

According to the large-size single crystal diamond structure and the preparation method thereof, at least two diamond seed crystals are embedded into the grooves penetrating through the metal iridium film layer and the yttria-stabilized zirconia layer in the thickness direction, so that the single crystal diamond epitaxial layer can be grown on the diamond seed crystals through the homoepitaxy technology; meanwhile, the monocrystal diamond epitaxial layer is grown on the metal iridium body between the diamond seed crystals by utilizing a heteroepitaxy technology, so that the quality of the corresponding monocrystal diamond epitaxial layer between the diamond seed crystals can be improved; the problem that in the prior art, a splicing growth technology is adopted to obtain a large-size single crystal diamond epitaxial layer, steps or defects appear at splicing seams is solved, and therefore the large-size and high-quality single crystal diamond epitaxial layer can be obtained through the homoepitaxy and heteroepitaxy combined growth mode.

The invention relates to the technical field of molten salt, in particular to nitro binary molten salt and a preparation method thereof. The preparation method comprises the following steps: mixing sodium carbonate and a potassium hydroxide solution, and then adding a starch-based grafted crystal inhibitor to inhibit crystallization; adding a nitric acid aqueous solution in two stages, and introducing eutectic seed crystals to guide nucleation at the end of the first stage; crystal distribution is optimized through falling film evaporation and concentration and setting of partial reflux; and after spraying granulation, carrying out short-time melting reforming and controlled cooling in an inert atmosphere. According to the method, the composition uniformity and the structural stability of the molten salt are remarkably improved, so that the product has a melting point close to a theoretical eutectic point, low supercooling degree, high melting latent heat and excellent thermal cycling stability and corrosion resistance, and is suitable for an industrial heat storage system running for a long time.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

In a first step S101, the raw material is directly induction heated using a high-frequency induction heating coil (103) while cooling the outer periphery of a raw material (151) to or below the melting point of the raw material by a cooling mechanism (102) to form a raw material melt (152) (raw material melting step). In a second step S102, a seed crystal (161) is brought into contact with the melt (seeding step). In a third step S103, a crystal (153) is grown from the seed crystal (crystal growth step). In the third step S103, the high-frequency induction heating coil and the seed crystal are gradually separated from each other while maintaining the relative distance between the high-frequency induction heating coil and the outer periphery of the raw material, and the crystal is grown in the melt.

The invention discloses a growth device and method suitable for mass production of crystals by a fluxing agent method / liquid phase method. The growth method comprises the following steps: putting a seed crystal and a liquid phase growth raw material into a first growth container, putting the seed crystal into a second growth container, keeping the temperature of a first temperature zone at a first temperature T1, keeping the temperature of a second temperature zone at a second temperature T2, keeping the temperature of a third temperature zone at a third temperature T3, other growth conditions required by crystal growth are provided in the growth chamber; and rotating the rotary lifting frame to drive the second growth container and the seed crystal carried by the second growth container to rotate along a selected rotating track, so that the second growth container and the seed crystal carried by the second growth container are repeatedly transferred between the first temperature zone and the second temperature zone and are repeatedly immersed into the liquid phase growth raw material in the first growth container. The method can be used for industrially producing high-quality single crystals such as gallium nitride with different sizes in batches, and the production efficiency and quality are improved.

Provided is a SiC polycrystal manufacturing method based on a sublimation recrystallization method using a SiC seed crystal. In the method, a polycrystalline SiC substrate that is a SiC polycrystal produced by a sublimation recrystallization method and contains a greater amount of α-SiC than β-SiC is used as the SiC seed crystal.

The invention discloses a catalyst for an n-butene isomerization reaction and a preparation method thereof, and belongs to the technical field of catalysts. The preparation method comprises the following steps: mixing a silicon source, an aluminum source, tetrapropylammonium hydroxide and water, adding boric acid, and crystallizing to obtain a seed crystal; the method comprises the following steps: mixing a silicon source, an aluminum source, pyridine and water, adding a seed crystal and ammonium fluoride, and crystallizing to obtain a core-shell type molecular sieve; adding the core-shell type molecular sieve into the bimetallic complex solution for dipping to obtain a metal-loaded type molecular sieve; adding the metal-loaded molecular sieve into a triethyl phosphine ethanol solution for treatment to obtain a phosphorus-modified molecular sieve; uniformly mixing the phosphorus-modified molecular sieve, pseudo-boehmite, sesbania powder and water, kneading, performing extrusion molding, drying and calcining to obtain the catalyst. The catalyst prepared by the invention is used for n-butene isomerization reaction, and has excellent catalytic activity and isobutene selectivity.

The invention relates to the technical field of crystal furnaces, in particular to a temperature control system and method for a crystal furnace, and the method comprises the steps: setting the target temperature of the crystal furnace, heating the crystal furnace through a heater, and monitoring the internal temperature of the crystal furnace in real time through a temperature sensor; crystal growth is guided through seed crystals in the crystal furnace, and airflow distribution in the crystal furnace is guided through a guide plate; determining whether the temperature control stability of the crystal furnace meets the requirement or not based on the maximum temperature difference quantity in the crystal furnace; if the temperature control stability of the crystal furnace does not meet the requirement, whether the duty ratio of a heater needs to be increased or not is determined; determining whether thermal management in the crystal furnace meets requirements based on the growth rate of the crystal in the crystal furnace; determining whether the rotation speed of the seed crystal needs to be increased; and determining whether the angle of the guide plate in the crystal furnace needs to be increased based on the fluctuation amplitude of the pressure in the crystal furnace. The temperature control stability of the crystal furnace is improved.

The invention relates to a method for preparing a KFI molecular sieve membrane by utilizing a secondary growth method, in particular to a method for preparing the KFI molecular sieve membrane through rapid induction under the conditions of no template agent, no fluorine medium and no heavy metal. According to the method for preparing the KFI molecular sieve membrane by adopting the seed crystal method under the condition of not using a template agent, fluoride and noble metal ions, the membrane synthesis time and the membrane application cost can be remarkably reduced, and the industrial application of the KFI molecular sieve membrane is promoted.

An ingot puller apparatus for producing a single crystal ingot includes a housing defining a growth chamber and a growth chamber outlet, a crucible positioned in the growth chamber for containing a melt of semiconductor material, a cooling jacket positioned in the growth chamber between the crucible and the growth chamber outlet, the cooling jacket defining a cooling passage having an inlet proximate the crucible and an outlet proximate the growth chamber outlet, a puller positioned to contact a seed crystal with a surface of the melt and pull the single crystal ingot from the melt and through the cooling passage, and an actuator connected to the cooling jacket and operable to move the cooling jacket in the growth chamber to control a cooling profile of the single crystal ingot.

The invention discloses a preparation method and application of an MFI zeolite membrane.The preparation method comprises the steps that an MFI zeolite nanosheet serves as a seed crystal, a uniformly-distributed and compact seed crystal layer is prepared on a carrier through a vacuum filtration method, namely, a nucleation center crystallized into a membrane is loaded on the surface of the carrier, and directional growth and membrane forming of the zeolite nanosheet can be effectively controlled; the highly b-oriented MFI zeolite membrane can be prepared within several hours, the prepared b-oriented MFI zeolite membrane shows a continuous and compact microstructure and almost has no defects, and compared with a traditional hydrothermal method, the method overcomes the defects that the reaction process is too long in time consumption, uneven in heating is prone to occurring, and the like. And therefore, the time required by crystal growth is greatly shortened. The prepared MFI zeolite membrane can be applied to pervaporation separation of xylene isomers, shows good size screening separation performance, and has important industrial application value.

The invention discloses a method for reducing the content of rare earth carbonate oil, which comprises the following steps: adding rare earth carbonate seed crystals and pure water into a precipitation tank, feeding a rare earth chloride solution after extraction separation into the precipitation tank, adding an ammonium bicarbonate solution, and carrying out precipitation reaction to obtain rare earth carbonate; the method comprises the following steps: treating rare earth carbonate with hydrochloric acid, converting into a rare earth chloride solution, and filtering the rare earth chloride solution to remove oil to obtain a refined rare earth chloride solution; adding rare earth carbonate into a precipitation tank as a seed crystal, adding the refined rare earth chloride solution and the prepared ammonium bicarbonate solution into the precipitation tank, and carrying out precipitation reaction to produce oil-free rare earth carbonate. According to the invention, oil entrained in the extraction feed liquid and oil dissolved in the feed liquid can be removed, and the quality of the rare earth carbonate product is improved.

The invention provides a method and system for recovering phosphate radicals, fluorine ions and sulfate radicals from phosphogypsum washing water step by step, and belongs to the technical field of industrial wastewater resourceful treatment. The method comprises the following steps: (1) adjusting the pH value of the wastewater to 3.0 + / -0.5, adding ferric sulfate according to the molar ratio of Fe to PO4 < 3-> of (1.0-1.5): 1, and selectively precipitating phosphate radicals to generate iron phosphate with the purity of more than or equal to 97%; (2) adjusting the pH value of the first filtrate to 4.7 + / -0.5, adding calcium fluoride seed crystals with the particle size of 50-200mm and CaCl2 (the molar ratio of Ca to F <-> is 0.5: 1-0.6: 1), and carrying out induced crystallization to recover calcium fluoride with the purity of more than or equal to 96%; and (3) adding Ca (OH) 2 (Ca: SO4 < 2-> molar ratio of 1.0: 1-1.2: 1) into the second filtrate, and directionally precipitating sulfate radicals to generate calcium sulfate dihydrate with the purity of more than or equal to 98%. According to the method, the pH and the precipitation sequence are controlled step by step, so that the problem of polyanion competition is solved, the recovery rates of phosphate radical, fluorine ion and sulfate radical respectively reach 98.8%, 96.3% and 97.5%, the content of PO4 < 3-> in purified water is less than or equal to 10 mg.L <-1 >, the content of F <-1 > is less than or equal to 5 mg.L <-1 >, and the content of SO4 < 2-> in purified water is less than or equal to 100 mg.L <-1 >, and the purified water can be directly recycled.

The invention relates to the technical field of iron phosphate preparation, in particular to a preparation method of low-impurity iron phosphate with a high iron-phosphorus ratio, which at least comprises the following steps: preparing an iron source solution and a phosphorus source solution; mixing an oxidizing agent and a phosphorus source solution as a phosphorus source mixed solution; adding the phosphorus source mixed solution into the iron source solution, and controlling the molar ratio of iron to phosphorus to be 1: (1.1-1.3) to prepare slurry; dividing the slurry into two parts, respectively adding an impurity removal agent, and then carrying out segmented aging at 90 DEG C to prepare crystallized slurry; and filtering, washing, drying and calcining the crystallized slurry to obtain a target product iron phosphate finished product. The impurity removal agent is selected from one or more of ferrous sulfate, ferrous chloride, ferrous nitrate and ferrous oxalate. Seed crystals are formed through segmented aging crystal transformation to promote crystal growth, and autonomous grain size distribution is achieved; an impurity removing agent is added in the aging stage, impurities are reduced by using the same ion effect, the iron-phosphorus ratio is increased, and the compaction density and the electrical property of the prepared lithium iron phosphate are remarkably improved.

The invention discloses a solid waste-based low-carbon gel material and a preparation method thereof. The material comprises the following components in percentage by mass: 40%-60% of high-activity slag, 20%-35% of tower bottom ash subjected to stage treatment, 3%-8% of a pH sensitive composite exciting agent, 0.5%-2% of nano C-S-H seed crystal, 0.1%-1% of modified cellulose nanocrystals and 15%-25% of water, and the water-solid ratio is controlled to be 0.15-0.28. The preparation method comprises the steps of tower bottom ash grading pretreatment, nano C-S-H seed crystal preparation and dispersion, pH sensitive composite exciting agent preparation, mixing and slurry preparation. Sulfate release is optimized through staged treatment, alkalinity is dynamically regulated and controlled through a pH sensitive exciting agent, ordered hydration and a multi-stage pore structure are induced through nano C-S-H seed crystals and modified cellulose nanocrystals, and the compressive strength, the impermeability and the low expansion rate are remarkably improved. Industrial solid waste is effectively utilized, energy consumption and carbon emission are reduced, the problems of non-uniform hydration and expansion cracking are solved, and the method is suitable for the fields of green buildings and resource recycling.

The invention discloses a forming method of a flash memory unit. The forming method comprises the following steps: providing a semiconductor substrate; forming a tunneling oxide layer on the semiconductor substrate; forming nanocrystalline silicon particles on the tunneling oxide layer; forming an isolation insulating layer on the tunneling oxide layer and the nanocrystalline silicon particles; and forming a control grid on the isolation insulating layer, wherein the step of forming the nanocrystalline silicon particles on the tunneling oxide layer comprises: forming an amorphous silicon layer on the tunneling oxide layer; and performing repeated seed crystal particle forming processes on the amorphous silicon layer, wherein surface annealing treatment is performed between two adjacent seed crystal particle forming processes, and an annealing process is performed after the last seed crystal particle forming process. The flash memory unit can be used for storing a large quantity of electrons, and has high performance.

The invention relates to the technical field of crystal growth, in particular to a device and a method for diversion growth of silicon carbide single crystals. The invention provides a device for diversion growth of silicon carbide single crystals. The device comprises a crucible, a first rotary lifting shaft and a turbine liquid pump kit, the turbine liquid pump kit comprises a flow guide baffle, the upper portion of the flow guide baffle is connected with the first rotary lifting shaft, a seed crystal support with seed crystals is installed on the lower portion of the flow guide baffle, turbine blades are installed on the flow guide baffle and evenly distributed around the seed crystals, and the height of the lower ends of the turbine blades is smaller than that of the seed crystals. The invention provides a device and a method for diversion growth of silicon carbide single crystals, which can improve the transmission stability and transmission efficiency of solute in a solution and improve the long-time growth stability of crystals.

The invention relates to the field of functional gel composite material preparation and application thereof, in particular to an alpha-FeOOH gel composite material and a preparation method thereof.The preparation method includes the steps that 1, mixed solid powder is prepared and added into humic acid to be mixed to obtain gel, and the gel is added into a FeSO4 solution to be stirred and mixed; 2, a NaOH solution is dropwise added into the mixture, the mass ratio of FeSO4 to NaOH and the pH value of the NaOH solution are controlled, air is introduced for oxidation, and a supported alpha-FeOOH seed crystal suspension compound is obtained; 3, dispersing chitosan in a mixed aqueous solution of humic acid and acetic acid to obtain a mixed aqueous solution of chitosan and humic acid; 4, mixing the suspension compound with the mixed aqueous solution to obtain a cross-linked mixture solution; and 5, adding the FeSO4 solution again, introducing air to oxidize, and dropwise adding the NaOH solution to control the pH value of the cross-linked mixture solution, so that alpha-FeOOH is precipitated and grows on the seed crystal, and the alpha-FeOOH-gel slow-release composite material is obtained. The humic acid enables the degradable plastic to age, exposes functional groups, and is easier to mix.

The invention relates to a wide-distribution large-particle high-nickel ternary precursor as well as a preparation method and application thereof. The preparation method comprises the following steps: adding a precipitant solution, a complexing agent solution, a dispersing agent, seed crystal slurry and a growth base solution into a reaction container; adding a nickel-cobalt-manganese ternary salt mixed solution, a precipitant solution and a complexing agent solution into the obtained reaction base solution in a parallel flow manner, and carrying out first coprecipitation; after the first particle size is reached, adding the seed crystal slurry, and carrying out second coprecipitation; after the second particle size is reached, adjusting the feeding volume of the seed crystal slurry per hour, introducing the seed crystal slurry into an overflow container, continuously carrying out second coprecipitation, and reaching and maintaining the seed crystal slurry at a third particle size; and when the maximum particle size reaches the cut-off particle size, stopping the reaction, and aging to obtain the wide-distribution large-particle high-nickel ternary precursor. According to the invention, wide particle size distribution regulation and control of the large-particle high-nickel ternary precursor are realized through dynamic feeding of the seed crystal slurry, feeding and continuous discharging can be realized at the same time, material waste of an intermittent method is reduced, and the preparation yield of a single-batch precursor is increased.

The invention belongs to the technical field of magnesium desulfurization wastewater treatment, and particularly relates to a magnesium desulfurization wastewater ammonia nitrogen and heavy metal ion cooperative treatment system which is characterized by comprising a vertical flow sedimentation tank, a stirring reaction device and a cyclone separator, and an outlet of the vertical flow sedimentation tank is connected with an inlet of the cyclone separator through a material transfer pipeline; a bottom outlet of the cyclone separator is connected with a stirring reaction device, the stirring reaction device is connected with an inlet of the vertical flow sedimentation tank through a seed crystal pump and a seed crystal pipeline, the stirring reaction device is connected with an automatic phosphate dosing feeder, the bottom of the stirring reaction device is connected with a blow-off pipeline through an automatic blow-off valve, and the treated desulfurization wastewater enters a downstream sewage treatment plant or is subjected to slag flushing. The method has the advantages that denitrification efficiency is high, reaction is stable, ammonia nitrogen and heavy metal ions in the magnesium desulfurization wastewater are synergistically removed, separated magnesium ammonium phosphate (struvite) precipitate crystals are used as seed crystals to return and adsorb, excessive addition of phosphate agents is reduced, and the effect of mixed reaction can be guaranteed.

The invention belongs to the technical field of industrial wastewater treatment and resource recovery, and particularly relates to an enhanced treatment method for recovering fluorine resources in semiconductor processing fluorine-containing wastewater. And step-by-step efficient recovery of sodium fluosilicate and calcium fluoride is realized through cooperation of precipitant compounding and pH regulation. The method comprises the following steps: firstly, adding a NaCl-NaHCO3 composite precipitator and sodium fluosilicate seed crystals to induce crystallization and recover hexagonal prism-shaped sodium fluosilicate single crystals; and after filtering, adding a CaCl2-Ca (OH) 2 composite precipitator and calcium fluoride seed crystals into the filtrate to generate large-particle calcium fluoride. And the impurity content in the recovered product respectively reaches the industrial sodium fluosilicate superior product standard and the metallurgical grade calcium fluoride secondary product standard. And the treated wastewater is neutral or weakly alkaline, so that the subsequent mixed treatment with other wastewater is facilitated.

A device for crystal growth and a crystal growth method. The device comprises a seed crystal holder, a seed crystal connecting rod, and a state detection assembly. The seed crystal holder is connected to one end of the seed crystal connecting rod, and the state detection assembly is configured to detect a seed crystal holder state of the seed crystal holder, wherein the seed crystal holder state reflects the state of the seed crystal holder relative to a melt, and the melt is used for crystal growth.

A Czochralski round silicon core growth furnace, comprising a furnace body, a pulling and rotating device, a multi-axis pulling disc device and a heat shield lifting device, wherein the furnace body comprises a main furnace chamber and an auxiliary furnace chamber, and the auxiliary furnace chamber is detachably connected to the main furnace chamber; the pulling and rotating device comprises a crystal pulling and lifting mechanism and a rotating mechanism; the multi-axis pulling disc device comprises a housing and a gear transmission mechanism located in the housing; the crystal pulling and lifting mechanism is connected to the housing; the rotating mechanism is connected to the gear transmission mechanism; the gear transmission mechanism is connected to a plurality of sets of seed crystals; and the heat shield lifting device comprises a lifting drive device and a perforated water-cooled jacket connected to the lifting drive device. The perforated water-cooled jacket is lifted by means of the lifting device to move up and down, and the auxiliary furnace chamber is detachably connected to the main furnace chamber, such that the function of cleaning ash without furnace shutdown is achieved, thereby effectively preventing impurities from falling, and ensuring the purity of a silicon melt.

The present invention discloses a wastewater crystallization granulation fluidized bed treatment device and a treatment method thereof. The wastewater crystallization granulation fluidized bed treatment device comprises a crystal seed delivery system, an alkali solution dosing system, a coagulation system, a sludge discharge system, a coarse particle collection system and a fluidized bed reactor. The crystallization granulation fluidized bed treatment device of the present invention adopts a variable diameter design so that the rising water velocity is distributed with the height, which facilitates the suspension of crystal seeds of different particle sizes, improves the utilization rate of the crystal seeds and the hardness removal efficiency, and has the functions of removing hardness and turbidity.