3results about How to "Stable electrical characteristics" patented technology

The high-frequency signal transmission line (101) includes a resin layer stack (3) having a first resin layer (11, 12, 13) and a second resin layer (21, 22) stacked thereon, a signal conductor pattern (4) formed on the first resin layer (11), and a ground conductor layer (5) sandwiching part or all of the resin layer stack (3) and opposite to the signal conductor pattern (4). The Young's modulus of the second resin layer (21, 22) is lower than that of the first resin layer (11, 12, 13). An opening is formed in the first resin layer (12) at least along the position of the signal conductor pattern (4) in the resin layer stack (3), thereby providing a hollow portion (HP) in the resin layer stack (3) by means of the opening.

The invention aims to disclose an expansion bus system for expansion of a programmable logic controller, and relates to the technical field of signal transmission. At least one slave station module; wherein the master station module and the slave station modules are sequentially cascaded to form a closed annular data link, and the annular data link forms an expansion bus; the expansion bus adopts a differential high-speed physical layer and LVDS (Low Voltage Differential Signaling) transceiving circuits arranged in the master station module and the slave station modules; the master station module comprises a master control processor and a master station programmable logic device. The master station programmable logic device comprises an expansion bus sending interface and an expansion bus receiving interface which are used for being connected with an expansion bus. According to the invention, the communication efficiency, the anti-interference capability, the real-time performance and the system expansibility are obviously improved, and the requirements of a modern industrial control system on a high-performance expansion link can be met.

This application relates to a low-power, high-reliability Schottky chip with self-adjusting injection efficiency, belonging to the field of semiconductor processing technology, comprising: a substrate layer, wherein the substrate layer is highly doped with N. + A substrate layer for reducing the on-resistance of the chip; an epitaxial layer disposed on the substrate layer; a Schottky junction region located on the epitaxial layer; and a Speed ​​structure region containing several small P-type transistors. ++ Grid; P + The protective ring, the P + The junction protection rings are located at both ends of the Schottky junction region; N ++ A junction cutoff ring is located at the chip terminal; multilayer passivation regions are used to enhance the product's resistance to high temperature, high humidity, and radiation; front and back metal electrodes are used for electrical connections. This application employs highly doped N... + The substrate layer effectively reduces the on-resistance of the chip, thereby significantly improving the current transmission efficiency.