This application relates to a low-power, high-reliability Schottky
chip with self-adjusting injection efficiency, belonging to the field of
semiconductor processing technology, comprising: a substrate layer, wherein the substrate layer is highly doped with N. + A substrate layer for reducing the on-resistance of the
chip; an epitaxial layer disposed on the substrate layer; a Schottky junction region located on the epitaxial layer; and a Speed structure region containing several small P-type transistors. ++ Grid; P + The protective ring, the P + The junction protection rings are located at both ends of the Schottky junction region; N ++ A junction cutoff ring is located at the
chip terminal; multilayer
passivation regions are used to enhance the product's resistance to high temperature,
high humidity, and
radiation; front and back
metal electrodes are used for electrical connections. This application employs highly doped N... + The substrate layer effectively reduces the on-resistance of the chip, thereby significantly improving the current transmission efficiency.