20408results about How to "Simple manufacturing process" patented technology

Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

A biosensor comprises a space part for sucking and housing a sample formed of two upper and lower plates, the two plates being stuck together by an adhesive layer, the space part for sucking and housing the sample being constituted so as to be partially opened in the peripheral part and partially closed by the adhesive layer, and has a working electrode having at least glucose oxidase immobilized thereon and a counter electrode on the same plane of the plate.

Provided is a capacitance type input device, in which a plurality of first light transmission electrodes extending in a first direction and a plurality of second light transmission electrodes extending in a second direction crossing the first direction are formed in an input region of a light transmission substrate, wherein, when the light transmission substrate is viewed from the top, dummy patterns formed of the same light transmission conductive film as the first light transmission electrodes and the second light transmission electrodes are formed in regions sandwiched between the first light transmission electrodes and the second light transmission electrodes.

A semiconductor device includes a stacked structure having first conductive layers stacked stepwise and first insulating layers interposed between the first conductive layers, wherein undercuts are formed under the first conductive layers and each of the first conductive layers includes a first region covered by the first conductive layer and a second region extending from the first region, contact pads coupled to the second regions of the respective first conductive layers, and a liner layer formed on the contact pads and filling the undercuts.

A structure of an interference display cell is provided. The cell comprises a first plate and a second plate, wherein a support is located between the first plate and the second plate. The second plate is a deformable and reflective plate. An incident light from one side of the first plate is modulated and only specific frequency light reflects by the second plate. The frequency of the reflected light is related to the distance between the first plate and the second plate. The support has at least one arm. The arm's stress makes the arm hiking upward or downward. The distance between the first plate and the second plate is also changed. Therefore, the frequency of the reflected light is altered.

The memory device contains control structures that allow media content to be stored securely and distributed in a manner envisioned by the content owner, or service providers involved in the distribution. A wide variety of different avenues become available for distributing media content using such memory devices, such as where the devices contain one or more of the following: abridged preview media content, encrypted unabridged media content, prepaid content, rights and/or rules governing access to such content. The memory device has a type of control structures that enable a service provider (who can also be the content owner) to create a secure environment for media content distribution where end users and terminals register with the service provider, and gain access to the content in a manner controlled by the service provider. The various components to be loaded (e.g. abridged preview media content, encrypted unabridged media content, prepaid content, rights and/or rules governing access to such content) may be generated and loaded in a secure and efficient manner.

In a display device including a backlight and a display panel, the area of the backlight is divided into a plurality of unit regions; the display panel includes pixels which are larger in number than the unit regions; a frame rate of image data input to the device is converted to perform display while part of the unit regions in which black is displayed is in a non-light emission state; and the driving frequency of the backlight is converted in accordance with the display.

The present invention relates to an electronic cigarette case, includes a case body, a charging device disposed in the case body for charging electronic cigarettes. The charging device includes a charging base, a rechargeable battery, and a control circuit board integrated with a circuit processing unit. The charging base has an electrode support where first and second electrode elements, and a trigger element spaced apart from the second electrode element are all disposed on the electrode support. The second electrode element is flexibly deformable when one of the electronic cigarettes is inserted into the case body to create a charging circuit. The circuit processing unit automatically controls the rechargeable battery for charging the electronic cigarette being inserted until it is full of power, whereby the electronic cigarette case is readily to be assembled and to sue, and has a reliable electrical connection with an outer power source.

In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.

A portable atomizing apparatus according to the present invention includes a battery case, an atomizing device, a body case, a control unit, and a suction adjustment. The battery case receives a battery, and the atomizing device includes a heating member electrically connected to the battery for generating heat to atomize a source material. The body case is connected between the battery case and the atomizing device. Besides, the control unit is mounted inside the body case, electrically connected to the battery and to the heating member, so that the control unit receives an electrical power from the battery to control the output signal delivered to the heating member. Also, the suction adjustment opens or closes an air inlet of the atomizing apparatus so as to adjust the amount of air entering the atomizing apparatus.

A light-emitting device (10) using an LED is proposed. This light-emitting device (10) is provided with a packaging substrate (1), a light-emitting element (2) which is mounted on this packaging substrate (1) with its face down, a fluorescent member (3) that is arranged face to face with a light-extracting surface (S) of the light-emitting element (2) without contacting the light-emitting element (2) and an optical member (4) which receives light that has been emitted from the light-emitting element (2) and made incident thereon through the fluorescent member (3), and aligns the incident light toward the outside of the device. Light, emitted from the light-emitting element (2), is made incident on the fluorescent member (3) to excite the fluorescent material so that the fluorescent material re-emits light having a wavelength different from that of the incident light. Those light rays, emitted from the light-emitting element (2), which have not been absorbed by the fluorescent member (3) and have passed through the fluorescent member (3) and those light rays that have been emitted from the fluorescent material are made incident on the optical member (4) and are aligned. Because the fluorescent member (3) is not made in contact with the light-emitting element (2), it does not receive the heat from the light-emitting element (2) through heat conduction, and consequently becomes less susceptible to degradation due to heat. Moreover, with the face-down mounting structure, the fluorescent member (3) and the optical member (4) can be placed closer to the light-emitting element (2) as long as they dose not contact the light-emitting element (2). Consequently, the service life of the fluorescent material or the fluorescent-material-mixed resin that tends to deteriorate can be lengthened, lights can be extracted more efficiently, and light rays can be properly aligned in a predetermined direction.

A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

The invention relates to a transistor, a semiconductor device comprising the transistor and manufacturing methods for the transistor and the semiconductor device. The transistor according to the invention comprises: a substrate comprising at least a base layer, a first semiconductor layer, an insulating layer and a second semiconductor layer stacked sequentially; a gate stack formed on the second semiconductor layer; a source region and a drain region located on both sides of the gate stack respectively; a back gate comprising a back gate dielectric and a back gate electrode formed by the insulating layer and the first semiconductor layer, respectively; and a back gate contact formed on a portion of the back gate electrode. The back gate contact comprises an epitaxial part raised from the surface of the back gate electrode, and each of the source region and the drain region comprises an epitaxial part raised from the surface of the second semiconductor layer. As compared to a conventional transistor, the manufacturing process of the transistor of the invention is simplified and the cost of manufacture is reduced.

Improved, adaptable tissue-type heart valves and methods for their manufacture are disclosed wherein a dimensionally stable, pre-aligned tissue leaflet subassembly is formed and its peripheral edge clamped between and attached to an upper shaped wireform and a lower support stent. A variety of adaptable structural interfaces including suture rings, flanges, and conduits may be attached to the support stent with or without an outlet conduit disposed about the wireform to provide a tissue-type heart valve adaptable for use in either a natural heart or in mechanical pumping devices. The methods include forming individual leaflets with a template and using the template to attach the leaflets together to form a tissue leaflet subassembly. The template and leaflets include a straight edge terminating in oppositely directed tabs, and a curvilinear cusp edge extending opposite the straight edge. The template may include a guide slot in its straight edge and the assembly includes aligning two leaflet tabs with the template and passing sutures through the guide slot and through the leaflet tabs. The leaflet subassembly is mated to a wireform with the tabs extending through commissure posts of the wireform. A support stent having an upper surface matching the lower surface of the wireform sandwiches the edges of the leaflet subassembly therebetween. Separated tabs on the leaflet subassembly are passed through the wireform commissures and attached to adjacent stent commissures so as to induce clamping of the leaflet tabs between the stent commissures and wireform commissures upon a radially inward force being applied to the leaflets.

A color changeable pixel comprises a first plate, a second plate and a third plate. The three plates are settled in parallel. The second plate is a deformable and reflective plate. An incident light from one side of the first plate is modulated and only specific frequency light reflects by the second plate. The frequency of the reflected light is related to the distance between the first plate and the second plate. The second plate shifts by the voltage added on the third plate to change the distance between the first plate and the second plate. Therefore, the frequency of the reflected light is altered.

A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention adjusts a threshold voltage with a common contact, which has a portion outside the source or drain region extending to the back-gate region and provides an electrical contact of the source or drain region and the back-gate region, which leads to a simple manufacturing process, an increased integration level and a lowered manufacture cost. Moreover, the asymmetric design of the back-gate structure further increases the threshold voltage and improves the performance of the device.

A color changeable pixel comprises a first plate, a second plate and a third plate. The three plates are settled in parallel. The second plate is a deformable and reflective plate. An incident light from one side of the first plate is modulated and only specific frequency light reflects by the second plate. The frequency of the reflected light is related to the distance between the first plate and the second plate. The second plate shifts by the voltage added on the third plate to change the distance between the first plate and the second plate. Therefore, the frequency of the reflected light is altered.

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used.