Display device

a technology of display device and display screen, which is applied in the direction of semiconductor devices, instruments, electrical apparatus, etc., can solve the problems that the transistor is not always suitable for a larger glass substrate, and achieve the effects of enhancing the function of the protective circuit, facilitating the operation, and facilitating the operation

Inactive Publication Date: 2010-03-18
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0016]According to an embodiment of the present invention, a display device having a structure suitable as a protective circuit can be provided by forming the protective circuit with use of a non-linear element including an oxide semiconductor. In the connection structure between the first oxide semiconductor layer of the non-linear element and the wiring

Problems solved by technology

On the other hand, a thin film transistor manufactured using polycrystalline silicon has high field effect mobility, but a crys

Method used

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embodiment 1

[0046]In Embodiment 1, an example of a display device including a pixel portion and a protective circuit including a non-linear element provided around the pixel portion is described with reference to drawings.

[0047]FIG. 1 illustrates a positional relationship signal input terminals, scan lines, signal lines, protective circuits including non-linear elements, and a pixel portion in a display device. Over a substrate 10 having an insulating surface, scan lines 13 and signal lines 14 intersect with each other to form a pixel portion 17.

[0048]The pixel portion 17 includes a plurality of pixels 18 arranged in matrix. The pixel 18 includes a pixel transistor 19 connected to the scan line 13 and the signal line 14, a storage capacitor portion 20, and a pixel electrode 21.

[0049]In the pixel structure illustrated here, one electrode of the storage capacitor portion 20 is connected to the pixel transistor 19 and the other electrode is connected to a capacitor line 22. Moreover, the pixel ele...

embodiment 2

[0071]In Embodiment 2, an embodiment of a process for manufacturing the protective circuit illustrated in FIG. 4A in Embodiment 1 is described with reference to FIGS. 6A to 6C and FIGS. 7A to 7C. FIGS. 6A to 6C and FIGS. 7A to 7C are cross-sectional views taken along line Q1-Q2 of FIG. 4A.

[0072]In FIG. 6A, a glass substrate of barium borosilicate glass, aluminoborosilicate glass, aluminosilicate glass, or the like available in the market can be used as the substrate 100 having a light-transmitting property. For example, a glass substrate which includes more barium oxide (BaO) than boric acid (B2O3) in composition ratio and whose strain point is 730° C. or higher is preferable. This is because the glass substrate is not strained even in the case where the oxide semiconductor layer is thermally processed at high temperatures of about 700° C.

[0073]Next, a conductive layer is formed entirely over the substrate 100. After that, a resist mask is formed by a first photolithography process,...

embodiment 3

[0098]In Embodiment 3, the protective circuit illustrated in FIG. 4A in Embodiment 1 is formed using a non-linear element with a different structure from that described in Embodiment 2. That is, in a non-linear element of this example, source regions and drain regions are provided above and below a source electrode layer and a drain electrode layer. A thin film transistor having a different structure from that of Embodiment 2 and its manufacturing method are described with reference to FIGS. 8A to 8C and FIGS. 9A to 9C.

[0099]In Embodiment 3, the same portions as those of FIGS. 6A to 6C and FIGS. 7A to 7C are denoted with the same reference numerals and the description of the same steps is not made because Embodiment 3 is only partly different from Embodiment 1.

[0100]First, in a manner similar to Embodiment 2, a conductive layer is formed over the substrate 100 and then a first photolithography process is performed to form a resist mask, and an unnecessary portion is removed by etchi...

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Abstract

A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Description

TECHNICAL FIELD[0001]The present invention relates to a display device including an oxide semiconductor.BACKGROUND ART[0002]A thin film transistor formed over a flat plate such as a glass substrate is manufactured using amorphous silicon or polycrystalline silicon, as typically seen in a liquid crystal display device. A thin film transistor manufactured using amorphous silicon has low field effect mobility, but such a transistor can be formed over a glass substrate with a larger area. On the other hand, a thin film transistor manufactured using polycrystalline silicon has high field effect mobility, but a crystallization step such as laser annealing is necessary and such a transistor is not always suitable for a larger glass substrate.[0003]In view of the foregoing, attention has been drawn to a technique by which a thin film transistor is manufactured using an oxide semiconductor, and such a transistor is applied to an electronic device or an optical device. For example, Patent Doc...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCG02F1/13624G02F1/1368H01L27/124H01L27/1225H01L29/7869H01L27/0266H01L27/1214G02F1/133305G02F1/1339G02F1/13394G02F1/134309H01L27/1255H01L29/247H01L29/78693H01L29/78696
Inventor YAMAZAKI, SHUNPEIAKIMOTO, KENGOKOMORI, SHIGEKIUOCHI, HIDEKIFUTAMURA, TOMOYAKASAHARA, TAKAHIRO
Owner SEMICON ENERGY LAB CO LTD
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