1722results about How to "Increase computing speed" patented technology

A DRAM capacitor uses ruthenium or ruthenium oxide as an upper electrode and hafnium dioxide or zirconium oxide as an insulation layer. The DRAM capacitor is intended to suppress diffusion of ruthenium, etc. into hafnium dioxide. Tantalum pentoxide or niobium oxide having a higher permittivity than that of the insulation layer is inserted as a cap insulation layer to the boundary between the upper electrode of ruthenium or ruthenium oxide and the insulation layer of hafnium dioxide or zirconium oxide to thereby suppress diffusion of ruthenium, etc. into hafnium dioxide, etc.

A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Malfunction caused by leakage current of the transistor and shift in threshold voltage is prevented in the shift register in which the signal can be shifted bi-directionally. The bi-directional unit shift register includes a first transistor Q1 for providing a first clock signal CLK to an output terminal OUT, a second transistor Q2 for discharging the output terminal OUT based on a second clock signal, third and fourth transistors Q3, Q4 for providing first and second voltage signals Vn, Vr complementary to each other to a first node, which is a gate node of the first transistor Q1, and a fifth transistor Q5 connected between the first node and the output terminal OUT. The fifth transistor Q5 is in an electrically conducted state based on the first clock signal CLK when the gate of the transistor Q1 is at L (Low) level.

A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.

Magnetic levitation methods and apparatus use arrays of vehicle magnets to provide three forces: suspension, guidance and propulsion. The magnets, which can be permanent magnets or superconducting magnets operating in the persistent current mode, have associated control coils that allow the magnets to provide a controllable attractive force to a laminated steel rail. The control coils adjust the gap between the magnets and the rails so as to be in stable equilibrium without requiring significant power dissipation in the control coils. These same magnets and steel rails also provide lateral guidance to keep the vehicle on the track and steer the vehicle on turns. The suspension control coils can provide lateral damping by means of offset magnets in the suspension arrays. Windings in transverse slots in the steel rails are excited with currents that react against the field produced by the vehicle magnets to create vehicle propulsion. The magnet size is adjusted to provide negligible cogging force even when there are as few as three winding slots per wavelength along the rail. Means are used to mitigate end effects so that a multiplicity of magnet pods can be used to support the vehicle.

A method and apparatus for omni-directional image and 3-dimensional data acquisition with data annotation and dynamic rage extension method is capable of omni-directionally photographing, acquiring 3-dimensional images photographed by cameras having each different exposure amount in connection with the direction of height of an object, extending dynamic range, and generating an geographical information by entering an annotation such as photographing location and time into the photographed images, which can be connected with other geographical information system database. The apparatus includes one or more multi camera module(s) which are stacked and formed multi layers in the direction of height for acquiring 3-dimensional images and extending dynamic range of the 3-dimensional images, wherein each multi camera module includes a plurality of cameras symmetrically arranged with a specific point in a plane.

The invention described relates to a radio positioning system primarily for a mobile telephone network, in which a list of offsets in time, phase, frequency, or derivatives thereof, or their equivalents expressed as offsets in distance or derivatives thereof, of a plurality of transmission source signals, received at a given location, relative to a common reference are generated. Data is acquired from one or more receivers, the positions of which may be known or determined. Such data are offsets in time, phase, frequency, or derivatives thereof, respectively of signals received from the transmission sources relative to a reference source in each receiver or to each other. The acquired data is combined for calculating the list of offsets relative to the common reference.

Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

A method of establishing a multicast transfer route is disclosed that can reduce the cost of entire route under a constraint on delay incurred between starting point and ending points. The method includes the steps of: computing the shortest route with respect to delay connecting the starting point and the plural ending points based on measurement result; computing delay from a node on the shortest route to each ending point and the greatest delay; removing, if the greatest delay satisfies a delay condition, the greatest-cost route from the shortest route in accordance with selection criteria effective for cost reduction; dividing the multicast transfer route into two route trees; and establishing separately computed route as a complementary route that complement the removed route for connecting the two route trees. A method of multicast label switching for realizing the above method is also disclosed. A multicast label switching route is established using hierarchical labels by establishing a common multicast label switching route using a first layer label and establishing plural partial multicast label switching routes for subgroup destinations using lower layer labels. A relay node recognizes the hierarchical labels thereby to label-switch using all hierarchical labels.

The invention discloses a regional depth edge detection and binocular stereo matching-based three-dimensional reconstruction method, which is implemented by the following steps: (1) shooting a calibration plate image with a mark point at two proper angles by using two black and white cameras; (2) keeping the shooting angles constant and shooting two images of a shooting target object at the same time by using the same camera; (3) performing the epipolar line rectification of the two images of the target objects according to the nominal data of the camera; (4) searching the neighbor regions of each pixel of the two rectified images for a closed region depth edge and building a supporting window; (5) in the built window, computing a normalized cross-correlation coefficient of supported pixels and acquiring the matching price of a central pixel; (6) acquiring a parallax by using a confidence transmission optimization method having an acceleration updating system; (7) estimating an accurate parallax by a subpixel; and (8) computing the three-dimensional coordinates of an actual object point according to the matching relationship between the nominal data of the camera and the pixel and consequently reconstructing the three-dimensional point cloud of the object and reducing the three-dimensional information of a target.

A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. Furthermore, the HDTMOS includes an n-type high concentration Si body region, an n⁻ Si region, a SiGe channel region containing n-type low concentration impurities, an n-type low concentration Si cap layer, and a contact which is a conductor member for electrically connecting the gate electrode and the Si body region. The present invention extends the operation range while keeping the threshold voltage small by using, for the channel layer, a material having a smaller potential at the band edge where carriers travel than that of a material constituting the body region.

A solid-state image sensor has a chip-size package, which can be easily fabricated. The element-formation regions are formed in the semiconductor substrate (21) of the light-receiving element layer (20) corresponding to the pixel regions. The semiconductor light-receiving elements (PD) are formed in the respective element-formation regions and covered with the light-transmissive insulator films (25a), (25b) and (26). The light-introducing layer (40), which includes the light-introducing cavity (42) and the quartz cap (51) for closing the cavity, is formed on the film (26). The microlenses (43) are incorporated into the cavity (42). The electric output signals of the semiconductor light-receiving elements (PD) are taken out to the bottom of the substrate (21) by way of the buried interconnections of the substrate (21) and then, derived to the outside of the image sensor by way of the output layer (10) or the interposer (10A).

An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

A method for receiving messages containing data conveyed over a network, using a network adapter coupled to a computing device having a system memory associated therewith. At least one queue of descriptors is generated in the system memory, each such descriptor indicating a disposition of the data contained in the messages to be received over the network. At least one of the descriptors is prefetched from the at least one queue in the system memory to a cache memory in the network adapter. When one of the messages is received at the network adapter, the adapter processes the at least one of the received messages so as to cause the data contained therein to be distributed in accordance with the at least one prefetched descriptor in the cache memory.

A method of improving the computation speed of the sum of absolute transformed distances (SATD) for different intra-prediction modes is described. Determining the SATD quicker provides the benefits of better coding performance without suffering the drawbacks of longer computation times. The method of reducing intra-prediction and mode decision processes in a video encoder, implements Hadamard transforms with improvements. Hadamard transforms are performed on an original block and predicted blocks and calculations are only performed where coefficients are non-zero thus skipping the coefficients that are zero. Using such an approach, the calculations required for the Vertical Prediction, Horizontal Prediction and DC Prediction are reduced significantly. Thus, the best intra-prediction mode is able to be determined very efficiently.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.

The invention discloses a short-term load prediction method based on similar day segmentation and an LM-BP network. According to the method, through quantitative calculation of comprehensive correlative coefficients between meteorological factors and a historical load curve corresponding to a to-be-predicted day, the load curve of the to-be-predicted day is segmented, and according to prediction load curves within different time intervals, corresponding similar days are separately figured out; selection of the similar days is conducted through comprehensive consideration of a multi-feature similarity judgement standard of tendency similarity and shape similarity which are based on historical day meteorological similarity and historical load data. A similar day sample with the highest similarity is selected form historical data of the same kind; different neural network models are constructed through different training samples within different load prediction time intervals, and therefore the prediction precision of the neural network models is further improved. By means of the method, the calculation speed and convergence speed of a prediction algorithm are increased.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

The present invention provides for a one or more layer graphene optical modulator. In a first exemplary embodiment the optical modulator includes an optical waveguide, a nanoscale oxide spacer adjacent to a working region of the waveguide, and a monolayer graphene sheet adjacent to the spacer. In a second exemplary embodiment, the optical modulator includes at least one pair of active media, where the pair includes an oxide spacer, a first monolayer graphene sheet adjacent to a first side of the spacer, and a second monolayer graphene sheet adjacent to a second side of the spacer, and at least one optical waveguide adjacent to the pair.

Direct optical imaging of anatomical features and structures from within a biological organ in a dynamic environment (where the tissue being imaged is in motion due to cardiac rhythms, respiration, etc) presents certain image stability issues due (and/or related) to the motion of the target structure and may limit the ability of the user to visually interpret the image for the purposes of diagnostics and therapeutics. Systems and mechanisms for the purpose of actively stabilizing the image or for compiling and re-displaying the image information in a manner that is more suitable to interpretation by the user are disclosed.