19 results about "Monolayer graphene" patented technology

The invention relates to a method for fabricating a two-dimensional (2D) heterostructure comprising depositing graphene on a substrate in an ultrahigh vacuum (UHV) chamber at a first temperature and a first chamber pressure to form sub-monolayer graphene on the substrate; and subsequently depositing borophene onto the sub-monolayer graphene on the substrate in the UHV chamber at a second temperature and a second chamber pressure so as to couple the borophene with the graphene on the substrate to form a 2D borophene-graphene heterostructure comprising lateral and / or vertical heterostructures.

The present invention relates to a method for manufacturing single crystal graphene having a large area and extremely low surface roughness, and graphene manufactured by the manufacturing method. The method for manufacturing graphene according to the present invention comprises the steps of: (S1) introducing a metal substrate into a sealed chamber, and then heating and pressurizing the inside of the sealed chamber; (S2) supplying a gaseous carbon-containing compound into the chamber to grow graphene on the metal substrate; and (S3) cooling the chamber, wherein a first gas is continuously supplied to the sealed chamber in steps (S1) to (S3).

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

The invention discloses a multi-component synergistically modified three-dimensional electro-catalytic material and a preparation method thereof, and relates to the technical field of environmental catalytic materials.The material is prepared by taking columnar activated carbon as a carrier and synergistically loading cobalt-manganese-nickel-iron-copper-molybdenum-lanthanum-niobium multi-principal-element metal salt, acidic silica sol, phytic acid, a KH550 silane coupling agent and single-layer graphene oxide; all the components are compounded according to a specific mass ratio and are subjected to modification, impregnation and high-temperature curing. The preparation method comprises the steps of KH550 modified activated carbon preparation, multi-component composite steeping liquor preparation, co-adsorption / coating, air atmosphere high-temperature heat treatment and the like. According to the material, a three-dimensional structure of an activated carbon framework, a high-entropy active center and a Si-C-GO network is constructed, the material is applied to an MFEC heterogeneous catalytic electrolysis process to serve as a catalytic filler, and the technical problems that a traditional electro-catalytic material is narrow in pH adaptation range, poor in stability and low in mass transfer efficiency, and the treatment effect of refractory industrial wastewater is poor are solved. Good industrial application prospects are realized.

The invention relates to the field of research, development and application of semiconductor devices, in particular to a silicon / graphene / germanium barrier transistor array based on the technology of epitaxial growth of graphene on germanium and a construction method. The transistor comprises the following components from top to bottom: a first layer comprises a base electrode and silicon thin film combined structure, a second layer comprises an emitting electrode and epitaxially-grown single-crystal single-layer graphene, a third layer is a germanium substrate, and a fourth layer is a collector electrode; wherein the bottom of the base electrode is connected with the graphene through a silicon thin film, and the graphene is a layer of single crystal graphene growing on the surface of the germanium substrate through chemical vapor deposition; the base electrode, the emitter electrode and the collector electrode are all metal electrodes, and the metal electrodes are of a titanium / gold laminated composite structure. According to the invention, Schottky heterojunctions of graphene and germanium and Schottky heterojunctions of graphene and silicon are respectively constructed, and different barrier heights of the two heterojunctions are utilized, so that a 4 * 105 common emitter current gain, a 2 * 106 power gain and a prototype device with THz characteristic frequency theoretically are realized.

The invention relates to a graphene-based high-switch-ratio vertical organic transistor and a preparation method thereof, and belongs to the technical field of organic semiconductor devices. The transistor comprises a first metal electrode, a rubrene single-crystal active layer, a second metal electrode, a single-layer graphene electrode, a silicon dioxide dielectric layer and a silicon substrate which are sequentially stacked from top to bottom, wherein the silicon substrate is also used as a grid electrode. The graphene electrode is prepared by a mechanical stripping method, and is transferred to the surface of silicon dioxide at a low temperature of 50-120 DEG C after being pretreated by ozone or plasma to form a porous structure so as to improve the vertical charge injection performance; the rubrene single crystal active layer is deposited through a two-step sublimation method, high crystal quality is obtained through annealing treatment, then the rubrene single crystal active layer is transferred to the surface of the graphene electrode by means of the flexible polymer microneedle, and interface defects are reduced. And finally, respectively depositing metal electrodes with the thickness of 20-80nm above and below the rubrene to construct a vertical organic transistor structure. The device shows excellent switching performance under the condition of low power consumption, the switching ratio is larger than 2.5 * 10 < 6 >, the off-state current density is not larger than 10 [mu] A / cm < 2 >, and the device is suitable for flexible logic devices and neuromorphic calculation application.

The application relates to the field of packaging films, and particularly discloses a high-barrier polyolefin composite film and a preparation method thereof. The high-barrier polyolefin composite film comprises, from outside to inside, a PE outer film, a water-blocking layer, a PVA high-barrier coating layer, a bonding layer and a PE inner film. The PE inner film comprises the following raw materials in percentage by weight: 10-20% of HDPE, 30-50% of MDPE, 20-26% of LLDPE, 10-20% of LDPE, 8-12% of water-oxygen blocking masterbatch and 1-3% of an additive. The water-oxygen blocking masterbatch comprises the following raw materials in parts by weight: 10-20 parts of polycarbonate, 0.1-0.3 parts of a compatilizer, 10-20 parts of ethylene-vinyl acetate copolymer, 1-2 parts of monolayer graphene and 1-2 parts of cage polysilsesquioxane. The high-barrier polyolefin composite film has the advantages of high water-oxygen blocking capacity, high tensile strength, good transparency and convenient recycling.

This invention relates to a method for preparing easily dispersible pigments using graphene-modified CI Pigment Red 179. Monolayer graphene or monolayer graphene oxide powder and a solvent are added to water and stirred to mix. CI Pigment Red 179 is then added, and the mixture is stirred and slurried to obtain a pigment slurry. A nonionic surfactant is added, and the mixture is stirred and slurried again. The slurry is then dispersed by grinding in a sand mill. An anionic surfactant is added to the dispersed slurry, and the mixture is dried in a spray dryer to obtain an easily dispersible pigment. The easily dispersible pigment obtained by this invention using graphene-modified CI Pigment Red 179 exhibits high tinting strength, small particle size, more concentrated particle size distribution, and good dispersibility when used in coatings and inks. The tinting strength can reach 129%, the average particle size is reduced from 24.140 μm to 4.482 μm, the particle size distribution is more concentrated, and soft, easily dispersible pigment particles are obtained.

The invention belongs to the technical field of single crystal material preparation, and provides a barium-magnesium bimetal boron nitride compound-based solvent (Ba-Mg DMB), which significantly improves the yield of hexagonal boron nitride (h-BN) single crystals under high temperature and high pressure (HPHT) conditions, and further improves the crystal quality. Compared with the yield of about 12% of a barium-based solvent, the yield of the Ba-Mg DMB solvent is increased by 4.8 times, and the stable yield of about 57.3% is achieved. Researches find that under the HPHT condition, the magnesium element in Ba-Mg DMB can effectively remove carbon and oxygen impurities, which plays a key role in promoting the obtaining of h-BN single crystals with excellent quality. The high-quality characteristic is verified through detailed characterization of Raman spectrum, X-ray diffraction, X-ray photoelectron spectroscopy and the like, and is particularly reflected in photoluminescence and cathode luminescence characteristics. Through the high carrier mobility shown in the single-layer graphene, it is directly proved that the h-BN single crystal derived from Ba-Mg DMB can be used as an ideal packaging material of a two-dimensional device.

This invention discloses a composite electrode material and its preparation method, belonging to the field of functional materials technology. The composite electrode material is composed of metal oxides, alkaline phenolic resin, phytic acid, monolayer graphene oxide, coupling agent KH5500, alkaline silica sol, and niobium ammonium oxalate. A continuous carbon network carbonized from phenolic resin serves as the substrate, monolayer graphene oxide as the conductive framework, and niobium pentoxide from the pyrolysis of niobium ammonium oxalate as the interfacial conductive bridging structure. These three components crosslink to form a three-dimensional conductive network. The preparation method includes KH550-modified graphene oxide, construction of the phytic acid composite system, ball milling of the main slurry, low-temperature introduction of phenolic resin for molding, and curing and sintering. This invention possesses high conductivity, high heat resistance, corrosion resistance, and high mechanical strength. The three-dimensional conductive network effectively reduces internal resistance and exhibits excellent cycle stability, making it widely applicable to supercapacitors and lithium-ion batteries. It solves the problems of poor heat resistance, weak interfacial bonding, and easy corrosion of traditional electrode materials.

This invention belongs to the field of electrokinetic remediation of heavy metals in soil, specifically relating to a method for preparing and applying an auxiliary electrode made of PANI@monolayer graphene oxide / MWCNT material. This invention functionalizes two carbon materials by acid treatment with hydrochloric acid, and then synthesizes polyaniline from aniline and loads it onto the polyaniline to form the auxiliary electrode. The carbon materials are monolayer graphene oxide and MWCNT (multi-walled carbon nanotubes). Under the synergistic effect of the acid-modified monolayer graphene oxide, MWCNT, and PANI, the auxiliary electrode exhibits higher structural stability and superior electrochemical properties, resulting in a longer high-stability time for electrokinetic remediation. The auxiliary electrode prepared using this method has significant advantages in terms of shape and conductivity.

The application provides a monolayer graphene single crystal copper wire material and a preparation method thereof. A vertical roll-to-roll technology is used to fasten the copper wire to a winding shaft of a lower unwinding chamber, so that the starting end of the copper wire passes through a tubular furnace body from bottom to top and is fixed to a winding shaft of an upper winding chamber, a tension in a specific range is applied at a winding end, the winding speed is 10 mm / min-100 mm / min, a specific temperature gradient is applied along the running direction of the copper wire, the growth of the copper single crystal grains is promoted, carbon source gas is introduced into the chamber, the growth of graphene on the surface of the copper wire is carried out through a chemical vapor deposition method, and the monolayer graphene single crystal copper wire material is obtained after continuous growth. In the process, the single crystallization of the copper wire and the coating of graphene on the surface of the copper wire are simultaneously realized, and the conductivity of the prepared monolayer graphene single crystal copper wire material is greatly improved compared with that of the original copper wire.

A water-based adhesive for the manufacture of laminated cellulosic boards includes monolayer graphene oxide as a glue enhancer. Laminated cellulosic boards may be obtained by providing cellulosic plies, applying a water-based adhesive, and contacting the surface of another cellulosic ply to the first cellulosic ply. A method for producing the water-based adhesive includes mixing starch, water and glue enhancer. The glue enhancer is a suspension of between 0.1 wt % and 0.001 wt % of monolayer graphene oxide in water.

The invention belongs to the technical field of negative ion coatings, and particularly relates to a graphene negative ion coating which comprises the following raw materials in percentage by weight: 15-25% of titanium dioxide, 4-6% of kaolin, 10-20% of high-calcium powder, 20-40% of natural resin emulsion, 1-2% of tourmaline, 1-2% of cryolite powder, 25-30% of water and 1-2.5% of single-layer graphene solution.

This invention addresses the shortcomings of existing terahertz sensors in terms of sensitivity and tunability by proposing a high-sensitivity metamaterial sensor based on plasmon-induced transparency (PIT) and Fano resonance in monolayer graphene. The specific graphene sensing structure of this invention consists of a vertical graphene strip and proportionally designed graphene resonant rings on both sides. This symmetrical graphene structure is attached to a SiO2 dielectric layer with a suitable relative permittivity, forming a typical transmission-type metamaterial sensor. The resulting terahertz metamaterial sensor possesses an excellent sensitivity of up to 2.84 THz / RIU, a superior quality factor, and insensitivity to changes in polarization and incident angle. Furthermore, by adjusting the structural parameters, flexible switching between dual functions can be achieved, significantly enhancing the accuracy of material detection and the range of sensing applications. This invention offers advantages such as high sensitivity, strong tunability, simple structure, and high stability. This design integrates the excellent characteristics of Fano resonance and the PIT effect, achieving the high sensitivity requirements of the sensor and successfully overcoming the performance limitations of traditional single-function sensors.

This invention presents a comprehensive evaluation method and application for mitigating microplastic toxicity in maize seedlings. It utilizes the biological concepts of relative mitigation effect index and absolute mitigation intensity coefficient for individual traits in maize seedlings affected by polystyrene (PS) microplastics, derived from the application of different concentrations of nano-zinc oxide (ZnONPs) / monolayer graphene (GO) solutions. This method scientifically, objectively, accurately, and comprehensively evaluates the overall mitigation effect and intensity of different concentrations of ZnONPs / GO solutions on PS microplastic toxicity in maize seedlings after 7 or 21 days of growth. Through comprehensive comparison, a scientific and efficient application method for mitigating PS microplastic toxicity in maize seedlings using ZnONPs / GO solution treatment is proposed. This invention is simple to operate, requires small amounts of ZnONPs / GO, is economical and practical, does not pollute the environment, and has a good overall mitigation effect on microplastic toxicity in maize seedlings, showing great potential for application in green, efficient, and clean maize production.

The application provides a preparation method of Janus polysiloxane modified monolayer graphene oxide, and belongs to the technical field of chemical modification of graphene oxide. First, toluene and water are mixed and then are allowed to stand to be layered, then monolayer graphene oxide is added into water, a cationic surfactant is added into toluene, and then is allowed to stand again; after the standing is completed, a single-end hydrogen-containing polysiloxane and trifluorophenyl boron are added into toluene to perform a standing reaction, part of toluene and water are extracted, and a remaining interfacial layer is obtained; finally, the interfacial layer is sequentially subjected to washing and drying to obtain Janus polysiloxane modified monolayer graphene oxide. The Janus polysiloxane modified monolayer graphene oxide prepared by the application has stronger amphiphilicity, and when used as a Pickering emulsifier, can make the emulsion more stable.

This invention provides a method for preparing ultra-smooth, wrinkle-free graphene films, belonging to the field of graphene film preparation technology. The method includes: smoothing the surface of a highly oriented pyrolytic graphite substrate; depositing a copper or nickel atomic layer on the substrate surface by electron beam evaporation; forming an atomically smooth copper or nickel surface by high-temperature treatment of the copper or nickel atomic layer; using a gaseous carbon source, growing a wrinkle-free monolayer graphene film on the atomically smooth copper surface via chemical vapor deposition; or using highly oriented pyrolytic graphite as a solid carbon source, growing a wrinkle-free multilayer graphene film on an atomically smooth nickel surface via a carbon dissolution-precipitation method. This invention solves the technical problem of wrinkle defects that may occur when using existing CVD methods to prepare graphene films.

The present invention describes a system and method for the selective separation and purification of gaseous isotopes and mixtures, with particular application in the production of Protium (H1) and Deuterium (D2). The system comprises a hyperboloid reactor equipped with a monolayer graphene membrane reinforced with boron nitride. The technical process is based on the induction of a quantum metamorphosis by means of an electromagnetic resonance emitter tuned to a spectral window of 1.0 THz to 2.5 THz. This excitation tunes the wavefunction of the target light species, increasing its probability of tunneling through the membrane's potential barrier. A differential pressure vector acts as a pneumatic motor to facilitate permeate flow, while non-resonant species are rejected by Pauli repulsion. The operating cycle is managed by the SITCR-Logic control unit, ensuring a continuous, efficient, and high-purity process.