31 results about "Monolayer graphene" patented technology

The invention belongs to the technical field of gas sensors, and particularly relates to an ultra-low power consumption nano-electromechanical resonant NO2 gas sensor based on an audio frequency comb and a method. Wherein the drain electrode and the source electrode are respectively arranged on the silicon dioxide insulating layer, an I-shaped groove is embedded in the silicon dioxide insulating layer between the drain electrode and the source electrode, an I-shaped gate electrode is arranged in the I-shaped groove, and the adsorption layer is laid on the silicon dioxide insulating layer and covers the surfaces of the drain electrode and the source electrode. The middle part of the adsorption layer is suspended above the I-shaped gate electrode, and the silicon dioxide insulating layer is arranged on the monocrystalline silicon substrate; specific detection of NO2 is achieved through single-layer graphene, the internal resonance excitation audio frequency comb phenomenon is introduced, the gas detection sensitivity and resolution are greatly improved, and sub-ppb-level NO2 gas detection is achieved.

The invention relates to a method for fabricating a two-dimensional (2D) heterostructure comprising depositing graphene on a substrate in an ultrahigh vacuum (UHV) chamber at a first temperature and a first chamber pressure to form sub-monolayer graphene on the substrate; and subsequently depositing borophene onto the sub-monolayer graphene on the substrate in the UHV chamber at a second temperature and a second chamber pressure so as to couple the borophene with the graphene on the substrate to form a 2D borophene-graphene heterostructure comprising lateral and / or vertical heterostructures.

The invention belongs to the technical field of graphene preparation, and particularly discloses a graphene preparation method and device based on coupling of an ultrasonic phased array and a micro-fluidic chip, and the preparation method comprises the following steps: graphite oxide dispersion liquid enters a micro-fluidic main channel through a sample inlet of the micro-fluidic chip; in a standing wave sound field and a laminar flow state of an ultrasonic phased array, stripping the graphite oxide dispersion liquid through a micro-jet shear force generated by a cavitation effect of the standing wave sound field to obtain a graphene oxide sheet layer; graphene oxide lamellas are synchronously separated to a specified separation flow channel through fluid shear force generated by a micro-channel contraction section and an inertia focusing effect caused by curvature of an arc-shaped separation section, and non-single-layer graphene oxide lamellas are separated to a flow channel. The proportion of the single-layer graphene obtained by the preparation method provided by the invention is as high as 95%, and the problem of microchannel blockage can be relieved.

The present invention relates to a method for manufacturing single crystal graphene having a large area and extremely low surface roughness, and graphene manufactured by the manufacturing method. The method for manufacturing graphene according to the present invention comprises the steps of: (S1) introducing a metal substrate into a sealed chamber, and then heating and pressurizing the inside of the sealed chamber; (S2) supplying a gaseous carbon-containing compound into the chamber to grow graphene on the metal substrate; and (S3) cooling the chamber, wherein a first gas is continuously supplied to the sealed chamber in steps (S1) to (S3).

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

The invention discloses a multi-component synergistically modified three-dimensional electro-catalytic material and a preparation method thereof, and relates to the technical field of environmental catalytic materials.The material is prepared by taking columnar activated carbon as a carrier and synergistically loading cobalt-manganese-nickel-iron-copper-molybdenum-lanthanum-niobium multi-principal-element metal salt, acidic silica sol, phytic acid, a KH550 silane coupling agent and single-layer graphene oxide; all the components are compounded according to a specific mass ratio and are subjected to modification, impregnation and high-temperature curing. The preparation method comprises the steps of KH550 modified activated carbon preparation, multi-component composite steeping liquor preparation, co-adsorption / coating, air atmosphere high-temperature heat treatment and the like. According to the material, a three-dimensional structure of an activated carbon framework, a high-entropy active center and a Si-C-GO network is constructed, the material is applied to an MFEC heterogeneous catalytic electrolysis process to serve as a catalytic filler, and the technical problems that a traditional electro-catalytic material is narrow in pH adaptation range, poor in stability and low in mass transfer efficiency, and the treatment effect of refractory industrial wastewater is poor are solved. Good industrial application prospects are realized.

The invention relates to the field of research, development and application of semiconductor devices, in particular to a silicon / graphene / germanium barrier transistor array based on the technology of epitaxial growth of graphene on germanium and a construction method. The transistor comprises the following components from top to bottom: a first layer comprises a base electrode and silicon thin film combined structure, a second layer comprises an emitting electrode and epitaxially-grown single-crystal single-layer graphene, a third layer is a germanium substrate, and a fourth layer is a collector electrode; wherein the bottom of the base electrode is connected with the graphene through a silicon thin film, and the graphene is a layer of single crystal graphene growing on the surface of the germanium substrate through chemical vapor deposition; the base electrode, the emitter electrode and the collector electrode are all metal electrodes, and the metal electrodes are of a titanium / gold laminated composite structure. According to the invention, Schottky heterojunctions of graphene and germanium and Schottky heterojunctions of graphene and silicon are respectively constructed, and different barrier heights of the two heterojunctions are utilized, so that a 4 * 105 common emitter current gain, a 2 * 106 power gain and a prototype device with THz characteristic frequency theoretically are realized.

The invention relates to a graphene-based high-switch-ratio vertical organic transistor and a preparation method thereof, and belongs to the technical field of organic semiconductor devices. The transistor comprises a first metal electrode, a rubrene single-crystal active layer, a second metal electrode, a single-layer graphene electrode, a silicon dioxide dielectric layer and a silicon substrate which are sequentially stacked from top to bottom, wherein the silicon substrate is also used as a grid electrode. The graphene electrode is prepared by a mechanical stripping method, and is transferred to the surface of silicon dioxide at a low temperature of 50-120 DEG C after being pretreated by ozone or plasma to form a porous structure so as to improve the vertical charge injection performance; the rubrene single crystal active layer is deposited through a two-step sublimation method, high crystal quality is obtained through annealing treatment, then the rubrene single crystal active layer is transferred to the surface of the graphene electrode by means of the flexible polymer microneedle, and interface defects are reduced. And finally, respectively depositing metal electrodes with the thickness of 20-80nm above and below the rubrene to construct a vertical organic transistor structure. The device shows excellent switching performance under the condition of low power consumption, the switching ratio is larger than 2.5 * 10 < 6 >, the off-state current density is not larger than 10 [mu] A / cm < 2 >, and the device is suitable for flexible logic devices and neuromorphic calculation application.

The application relates to the field of packaging films, and particularly discloses a high-barrier polyolefin composite film and a preparation method thereof. The high-barrier polyolefin composite film comprises, from outside to inside, a PE outer film, a water-blocking layer, a PVA high-barrier coating layer, a bonding layer and a PE inner film. The PE inner film comprises the following raw materials in percentage by weight: 10-20% of HDPE, 30-50% of MDPE, 20-26% of LLDPE, 10-20% of LDPE, 8-12% of water-oxygen blocking masterbatch and 1-3% of an additive. The water-oxygen blocking masterbatch comprises the following raw materials in parts by weight: 10-20 parts of polycarbonate, 0.1-0.3 parts of a compatilizer, 10-20 parts of ethylene-vinyl acetate copolymer, 1-2 parts of monolayer graphene and 1-2 parts of cage polysilsesquioxane. The high-barrier polyolefin composite film has the advantages of high water-oxygen blocking capacity, high tensile strength, good transparency and convenient recycling.

An anode material for an aqueous calcium ion battery and an aqueous calcium ion battery. The anode material for the aqueous calcium ion battery includes nitrogen and antimony co-doped graphene that can reversibly chemisorb / desorb cations Ca<supgt;2+< / supgt> that make up calcium salts, and the graphene is monolayer graphene; the nitrogen doping content of the nitrogen and antimony co-doped graphene is 6.94 at%, and the antimony doping content is 0.74 at%. The monolayer rate of the monolayer graphene is ≥90%. The specific doping structure of the nitrogen and antimony co-doped graphene anode material for the aqueous calcium ion battery of the present invention also combines the pseudocapacitance effect brought about by the doping of nitrogen and antimony heteroelements. It has chemisorption at specific sites, generating good pseudocapacitive Ca<supgt;2+< / supgt> storage capacity; in addition to having a high capacity, this material also has a high power density, with an energy density of 2.16 Whkg<supgt;‑1< / supgt> and a power density of 777.6 Wkg<supgt;‑1< / supgt>.

This invention relates to a method for preparing easily dispersible pigments using graphene-modified CI Pigment Red 179. Monolayer graphene or monolayer graphene oxide powder and a solvent are added to water and stirred to mix. CI Pigment Red 179 is then added, and the mixture is stirred and slurried to obtain a pigment slurry. A nonionic surfactant is added, and the mixture is stirred and slurried again. The slurry is then dispersed by grinding in a sand mill. An anionic surfactant is added to the dispersed slurry, and the mixture is dried in a spray dryer to obtain an easily dispersible pigment. The easily dispersible pigment obtained by this invention using graphene-modified CI Pigment Red 179 exhibits high tinting strength, small particle size, more concentrated particle size distribution, and good dispersibility when used in coatings and inks. The tinting strength can reach 129%, the average particle size is reduced from 24.140 μm to 4.482 μm, the particle size distribution is more concentrated, and soft, easily dispersible pigment particles are obtained.

This invention belongs to the field of two-dimensional graphene oxide nanomaterial technology. This invention provides a method for separating the size of monolayer graphene oxide, comprising the following steps: mixing water and an organic solvent and allowing the mixture to stand to obtain an oil / water two-phase system containing an oil phase and an aqueous phase; adding a surfactant and an aqueous solution of monolayer graphene oxide to the oil phase and the aqueous phase respectively, allowing the mixture to stand, repeatedly collecting the oil-water interface layer solution, and sequentially washing and centrifuging the interface layer solution to obtain large-sized monolayer graphene oxide; centrifuging the remaining aqueous phase solution to obtain small-sized monolayer graphene oxide. The method for separating the size of monolayer graphene oxide of this invention has good separation accuracy; and compared with ultrasonic methods, centrifugation methods, and membrane filtration methods, it has milder reaction conditions, lower energy consumption, and does not cause changes in the structure and size of graphene oxide; compared with precipitation methods and liquid crystal methods, the reaction time is shorter; and compared with electrophoresis methods, it does not change the structure of graphene oxide.

The invention belongs to the technical field of single crystal material preparation, and provides a barium-magnesium bimetal boron nitride compound-based solvent (Ba-Mg DMB), which significantly improves the yield of hexagonal boron nitride (h-BN) single crystals under high temperature and high pressure (HPHT) conditions, and further improves the crystal quality. Compared with the yield of about 12% of a barium-based solvent, the yield of the Ba-Mg DMB solvent is increased by 4.8 times, and the stable yield of about 57.3% is achieved. Researches find that under the HPHT condition, the magnesium element in Ba-Mg DMB can effectively remove carbon and oxygen impurities, which plays a key role in promoting the obtaining of h-BN single crystals with excellent quality. The high-quality characteristic is verified through detailed characterization of Raman spectrum, X-ray diffraction, X-ray photoelectron spectroscopy and the like, and is particularly reflected in photoluminescence and cathode luminescence characteristics. Through the high carrier mobility shown in the single-layer graphene, it is directly proved that the h-BN single crystal derived from Ba-Mg DMB can be used as an ideal packaging material of a two-dimensional device.

This invention discloses a composite electrode material and its preparation method, belonging to the field of functional materials technology. The composite electrode material is composed of metal oxides, alkaline phenolic resin, phytic acid, monolayer graphene oxide, coupling agent KH5500, alkaline silica sol, and niobium ammonium oxalate. A continuous carbon network carbonized from phenolic resin serves as the substrate, monolayer graphene oxide as the conductive framework, and niobium pentoxide from the pyrolysis of niobium ammonium oxalate as the interfacial conductive bridging structure. These three components crosslink to form a three-dimensional conductive network. The preparation method includes KH550-modified graphene oxide, construction of the phytic acid composite system, ball milling of the main slurry, low-temperature introduction of phenolic resin for molding, and curing and sintering. This invention possesses high conductivity, high heat resistance, corrosion resistance, and high mechanical strength. The three-dimensional conductive network effectively reduces internal resistance and exhibits excellent cycle stability, making it widely applicable to supercapacitors and lithium-ion batteries. It solves the problems of poor heat resistance, weak interfacial bonding, and easy corrosion of traditional electrode materials.

This invention belongs to the field of electrokinetic remediation of heavy metals in soil, specifically relating to a method for preparing and applying an auxiliary electrode made of PANI@monolayer graphene oxide / MWCNT material. This invention functionalizes two carbon materials by acid treatment with hydrochloric acid, and then synthesizes polyaniline from aniline and loads it onto the polyaniline to form the auxiliary electrode. The carbon materials are monolayer graphene oxide and MWCNT (multi-walled carbon nanotubes). Under the synergistic effect of the acid-modified monolayer graphene oxide, MWCNT, and PANI, the auxiliary electrode exhibits higher structural stability and superior electrochemical properties, resulting in a longer high-stability time for electrokinetic remediation. The auxiliary electrode prepared using this method has significant advantages in terms of shape and conductivity.

The application provides a monolayer graphene single crystal copper wire material and a preparation method thereof. A vertical roll-to-roll technology is used to fasten the copper wire to a winding shaft of a lower unwinding chamber, so that the starting end of the copper wire passes through a tubular furnace body from bottom to top and is fixed to a winding shaft of an upper winding chamber, a tension in a specific range is applied at a winding end, the winding speed is 10 mm / min-100 mm / min, a specific temperature gradient is applied along the running direction of the copper wire, the growth of the copper single crystal grains is promoted, carbon source gas is introduced into the chamber, the growth of graphene on the surface of the copper wire is carried out through a chemical vapor deposition method, and the monolayer graphene single crystal copper wire material is obtained after continuous growth. In the process, the single crystallization of the copper wire and the coating of graphene on the surface of the copper wire are simultaneously realized, and the conductivity of the prepared monolayer graphene single crystal copper wire material is greatly improved compared with that of the original copper wire.

A water-based adhesive for the manufacture of laminated cellulosic boards includes monolayer graphene oxide as a glue enhancer. Laminated cellulosic boards may be obtained by providing cellulosic plies, applying a water-based adhesive, and contacting the surface of another cellulosic ply to the first cellulosic ply. A method for producing the water-based adhesive includes mixing starch, water and glue enhancer. The glue enhancer is a suspension of between 0.1 wt % and 0.001 wt % of monolayer graphene oxide in water.

The invention relates to the technical field of terahertz metamaterial sensors, and provides a tunable terahertz metamaterial sensor based on triple plasma induced transparency in order to solve the problems that an existing terahertz wave band sensor is insufficient in sensitivity and tunability and the like. The designed single-layer graphene structure can be divided into three parts, wherein the middle part is composed of a cross-shaped ellipse and four elliptical rings, and the periphery is obtained by rotating a quarter of a circle. Wherein graphene is manufactured on the surface of a silicon dioxide substrate, and a layer of ionic gel with the dielectric constant of 1.82 is coated on a graphene pattern. Due to the central symmetry of the metamaterial, when incident light is terahertz waves, the transmission spectrum of the metamaterial can generate the same triple plasma induced transparency (PIT) phenomenon in two polarization directions. The terahertz metamaterial sensor formed by the invention has high sensitivity as high as 1.84 Thz / RIU, high quality factor and insensitivity to polarization and incident angle change. In addition, the device also has tunability, can control the frequency shift and switch-on and switch-off of the triple PIT window by adjusting the external voltage, and is suitable for a complex experimental environment.

The invention belongs to the field of analytical chemistry, and relates to electrochemical sensing measurement of pesticide residues. The invention provides a cerium vanadate / nitrogen-doped graphene composite material, a GCE sensor and a preparation method and application thereof, and the composite material is prepared by the following steps: adding an ammonium metavanadate solution into an ammonium ceric nitrate solution, stirring, adding urea, uniformly mixing, and recording as a solution A; adding urea into the single-layer graphene oxide dispersion liquid, uniformly mixing, and recording as a liquid B; uniformly mixing the solution A and the solution B, carrying out a hydrothermal reaction, centrifuging, washing, drying and grinding the product obtained after the reaction is finished to obtain the cerium vanadate / nitrogen-doped graphene composite material, and an electrochemical sensor prepared from the composite material can be used for independently determining fenitrothion and imidacloprid and can also be used for simultaneously detecting the fenitrothion and the imidacloprid, so that the electrochemical sensor has a wide application prospect. The method has good reproducibility, stability, anti-interference performance and selectivity. Practical verification shows that the sensor disclosed by the invention can be used for detecting fenitrothion and imidacloprid in an actual sample.

The present invention discloses a preparation method of antibacterial and warm graphene quantum dot cloud fluff, which relates to the technical field of cloud fluff. First, monolayer graphene is prepared by a chemical method, and then monolayer graphene quantum dots are prepared through an electrochemical reaction. Not only does it reach the nanometer level in terms of size, but its monolayer structure is also sharper, which can improve the sterilization effect; it is modified to make its surface rich in carboxyl groups, which are attached to cellulose to improve the agglomeration problem; secondly, the strong interaction between ball milling and polar solvents rich in hydroxyl groups is utilized, combined with ultrasound to break the intermolecular hydrogen bonds of cellulose macromolecules; then it is combined with hydroxy cashew phenol with a hydroxyl group in the side chain, and synergistically and efficiently catalyzes the generation of reactive oxygen with the graphene quantum dots attached to cellulose to achieve the sterilization effect; then the modified nanocellulose is prepared into an aerogel, which is added into polyester as an antibacterial masterbatch to prepare cloud fluff, improving the warming effect. The cloud fluff prepared by the present invention has antibacterial and warming effects.

The invention discloses a synthesis method of a biphenyl vinyl derivative BPVAn and application of the biphenyl vinyl derivative BPVAn in a high-performance vertical field effect transistor (VFET). In particular, the present invention describes in detail how to accurately control the mobility of carriers through a gate pulse voltage in a VFET using a biphenyl vinyl derivative single crystal, thereby significantly reducing the power consumption of the VFET. In the manufacturing process of the VFET, a BPVAn single crystal is firstly transferred to a single layer of graphene, and the graphene layer is located on a silicon dioxide layer formed on a silicon wafer. Then, a cesium fluoride (CsF) layer, a calcium (Ca) layer and a silver (Ag) layer are sequentially deposited on the BPVAn, and the silver layer serves as a drain electrode; the core innovation of the VFET design lies in the regulation and control mechanism of the grid pulse voltage, and the mechanism not only optimizes the carrier mobility, realizes quick switching through quick response to the pulse grid voltage, but also improves the overall equipment performance through reducing the energy consumption. The implementation of the technology shows the potential of BPVAn in improving the performance of the organic field effect transistor, especially the application value of BPVAn in the aspect of realizing low-energy-consumption high-speed electronic equipment.

The invention belongs to the technical field of negative ion coatings, and particularly relates to a graphene negative ion coating which comprises the following raw materials in percentage by weight: 15-25% of titanium dioxide, 4-6% of kaolin, 10-20% of high-calcium powder, 20-40% of natural resin emulsion, 1-2% of tourmaline, 1-2% of cryolite powder, 25-30% of water and 1-2.5% of single-layer graphene solution.

This invention addresses the shortcomings of existing terahertz sensors in terms of sensitivity and tunability by proposing a high-sensitivity metamaterial sensor based on plasmon-induced transparency (PIT) and Fano resonance in monolayer graphene. The specific graphene sensing structure of this invention consists of a vertical graphene strip and proportionally designed graphene resonant rings on both sides. This symmetrical graphene structure is attached to a SiO2 dielectric layer with a suitable relative permittivity, forming a typical transmission-type metamaterial sensor. The resulting terahertz metamaterial sensor possesses an excellent sensitivity of up to 2.84 THz / RIU, a superior quality factor, and insensitivity to changes in polarization and incident angle. Furthermore, by adjusting the structural parameters, flexible switching between dual functions can be achieved, significantly enhancing the accuracy of material detection and the range of sensing applications. This invention offers advantages such as high sensitivity, strong tunability, simple structure, and high stability. This design integrates the excellent characteristics of Fano resonance and the PIT effect, achieving the high sensitivity requirements of the sensor and successfully overcoming the performance limitations of traditional single-function sensors.

The invention discloses a La-doped cuprous oxide electrocatalyst loaded on graphene oxide and a preparation method of the La-doped cuprous oxide electrocatalyst. The preparation method comprises the following steps: 1) preparing a single-layer graphene oxide dispersion liquid; and 2) the La-doped cuprous oxide electrocatalyst loaded on graphene oxide is prepared by using the single-layer graphene oxide dispersion liquid, and the stability of the catalyst prepared by the method is relatively high.

This invention presents a comprehensive evaluation method and application for mitigating microplastic toxicity in maize seedlings. It utilizes the biological concepts of relative mitigation effect index and absolute mitigation intensity coefficient for individual traits in maize seedlings affected by polystyrene (PS) microplastics, derived from the application of different concentrations of nano-zinc oxide (ZnONPs) / monolayer graphene (GO) solutions. This method scientifically, objectively, accurately, and comprehensively evaluates the overall mitigation effect and intensity of different concentrations of ZnONPs / GO solutions on PS microplastic toxicity in maize seedlings after 7 or 21 days of growth. Through comprehensive comparison, a scientific and efficient application method for mitigating PS microplastic toxicity in maize seedlings using ZnONPs / GO solution treatment is proposed. This invention is simple to operate, requires small amounts of ZnONPs / GO, is economical and practical, does not pollute the environment, and has a good overall mitigation effect on microplastic toxicity in maize seedlings, showing great potential for application in green, efficient, and clean maize production.

A transparent flexible substrate structure comprises an optically transparent cyclo-olefin polymer flexible substrate, an optically transparent dielectric bonding film on the cyclo-olefin polymer surface, a monolayer graphene circuitry on the bonding film, copper traces on the bonding film and electrically connected to the graphene circuitry at edges of a transparent area, and a layer of transparent permanent resist on top of the graphene circuitry and portions of the copper traces.

The application provides a preparation method of Janus polysiloxane modified monolayer graphene oxide, and belongs to the technical field of chemical modification of graphene oxide. First, toluene and water are mixed and then are allowed to stand to be layered, then monolayer graphene oxide is added into water, a cationic surfactant is added into toluene, and then is allowed to stand again; after the standing is completed, a single-end hydrogen-containing polysiloxane and trifluorophenyl boron are added into toluene to perform a standing reaction, part of toluene and water are extracted, and a remaining interfacial layer is obtained; finally, the interfacial layer is sequentially subjected to washing and drying to obtain Janus polysiloxane modified monolayer graphene oxide. The Janus polysiloxane modified monolayer graphene oxide prepared by the application has stronger amphiphilicity, and when used as a Pickering emulsifier, can make the emulsion more stable.

This invention provides a method for preparing ultra-smooth, wrinkle-free graphene films, belonging to the field of graphene film preparation technology. The method includes: smoothing the surface of a highly oriented pyrolytic graphite substrate; depositing a copper or nickel atomic layer on the substrate surface by electron beam evaporation; forming an atomically smooth copper or nickel surface by high-temperature treatment of the copper or nickel atomic layer; using a gaseous carbon source, growing a wrinkle-free monolayer graphene film on the atomically smooth copper surface via chemical vapor deposition; or using highly oriented pyrolytic graphite as a solid carbon source, growing a wrinkle-free multilayer graphene film on an atomically smooth nickel surface via a carbon dissolution-precipitation method. This invention solves the technical problem of wrinkle defects that may occur when using existing CVD methods to prepare graphene films.

This invention relates to an interlayer ferroelectric transistor with 25 polarization states and its fabrication method, belonging to the field of ferroelectric functional devices. The interlayer ferroelectric transistor is fabricated based on a graphene / hexagonal boron nitride (hBN) heterostructure. The heterojunction graphene / hBN is placed on a SiO2 / Si substrate, with an hBN sheet as the bottom layer and a monolayer graphene as the top layer. The rotation angle between the graphene and hBN is controlled within 1° by dry transfer. The graphene / hBN interlayer ferroelectric transistor is further fabricated using electron beam lithography and electron beam evaporation processes. It can achieve more than 25 stable polarization states at room temperature and can be further used as an artificial neural synapse in neuromorphic computing, exhibiting excellent computational accuracy.

This invention discloses a pressure sensor based on a molybdenum disulfide heterojunction and its fabrication method, belonging to the field of pressure sensor technology. The sensor includes a base, electrodes, and a heterojunction. A microcavity is provided in the center of the base, and the heterojunction is correspondingly positioned within the microcavity. The heterojunction comprises a monolayer graphene film connected to the electrodes and a monolayer molybdenum disulfide film connected to the monolayer graphene. When the pressure changes, a pressure difference is formed inside and outside the microcavity, acting on the surface of the monolayer molybdenum disulfide film. The molybdenum disulfide converts the mechanical deformation into an electrical signal, regulating the carrier concentration of the graphene. Simultaneously, under the triple synergistic effect of graphene providing a high-speed carrier transport channel and the band structure modulation of the heterojunction interface formed by graphene and molybdenum disulfide, the sensor reflects pressure changes through different regulation of carrier concentration under different pressure environments, achieving high-precision and high-sensitivity pressure monitoring under weak pressure conditions.