8results about "Photo-emissive cathodes" patented technology

A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.

This invention relates to a photodetector comprising a support layer (10), a grating structure (20), and an active layer (30). The grating structure (20), referred to as a photonic crystal structure, comprises a pattern (22.1) and a non-zero constant thickness e. ccs The structured layer (22) is formed by the continuous sublayer (22.2), and the pattern (22.1) widens along the direction toward the continuous sublayer (22.2). Furthermore, the size of the photonic crystal structure (20) is such that the structured layer (22) forms a photonic crystal that supports at least one guided mode that can be excited by the incident light of interest. The photonic crystal is optically coupled to the active layer (30), such that the guided mode is optically confined in the structured layer (22) and the active layer (30).

Photocathode device for sub-nanosecond gating comprising an active photo-emissions region surrounded by an electrode region, the device comprising: - a substrate; - a photocathode layer deposited on the substrate; wherein the device also comprises: - a conductive underlayer deposited between the substrate and the photocathode layer in the active photo-emission region and preferably in the electrode region; - a layer of aluminium oxide deposited between the conductive underlayer and the photocathode layer. Method of manufacturing of the photocathode device, and visible light detection device comprising the photocathode device.

Photocathode device for sub-nanosecond gating comprising an active photo-emission region surrounded by an electrode region, the device comprising: - a substrate; - a photocathode layer deposited on the substrate; wherein the device also comprises: - a conductive underlayer deposited between the substrate and the photocathode layer in the active photo-emission region; - a layer of aluminium oxide deposited between the conductive underlayer and the photocathode layer. Method of manufacturing of the photocathode device, and visible and ultraviolet radiation detection device comprising the photocathode device.

The present invention relates to a solar blind photocathode device, comprising: a substrate, a photocathode layer disposed on the substrate, characterized by a conductive underlayer disposed between the substrate and the photocathode layer, wherein the conductive underlayer comprises a first layer of nickel (130) deposited directly on the substrate, and a second layer of aluminum oxide (140) deposited onto the first layer of nickel, wherein the second layer was obtained through natural oxidation of aluminum or direct evaporation of aluminum oxide. Aluminum oxide was configured to form an aluminum oxide interface with the photocathode layer. The conductive underlayer is arranged to provide electrical conductivity for the photocathode while maintaining high quantum efficiency in the deep ultraviolet spectrum.

Photocathode device for sub-nanosecond gating comprising an active photoemissions region (3) surrounded by an electrode region (5), the device comprising: - a substrate (7); - a photocathode layer (9) deposited on the substrate; wherein the device also comprises: - a conductive underlayer (11) deposited between the substrate and the photocathode layer in the active photo-emission region and preferably in the electrode region; - a layer of aluminium oxide (15) deposited between the conductive underlayer and the photocathode layer. Method of manufacturing of the photocathode device, and visible light detection device comprising the photocathode device.

Photocathode device for sub-nanosecond gating comprising an active photo-emission region (3) surrounded by an electrode region (5), the device comprising: - a substrate (7); - a photocathode layer (9) deposited on the substrate; wherein the device also comprises: - a conductive underlayer (11) deposited between the substrate and the photocathode layer in the active photo-emission region; - a layer of aluminium oxide (17) deposited between the conductive underlayer and the photocathode layer. In a preferred embodiment, the underlayer comprises a gold layer (15) deposited on a seed layer (13). Method of manufacturing of the photocathode device, and visible and ultraviolet radiation detection device comprising the photocathode device.