78results about "Photo-emissive cathodes" patented technology

The invention relates to an electron source, a preparation method of the electron source, an electron gun and application of the electron source. The electron source comprises an optical fiber and an electron emission layer, the optical fiber comprises a fiber core used for transmitting laser and a wrapping layer wrapping the fiber core, and the end face of the light outlet end of the optical fiber and the extending direction of the fiber core are arranged at an angle. The electron emission layer is arranged on the end face of the light emitting end of the optical fiber, and the electron emission layer at least comprises an electron excitation layer covering the fiber core. The electron excitation layer comprises at least one of a zero-dimensional material, a one-dimensional material and a two-dimensional material. Low-dimensional materials such as zero-dimensional materials, one-dimensional materials or two-dimensional materials are adopted as materials of the electron excitation layer, the low-dimensional materials have the atomic-scale thickness, back-incident electrons can be emitted without in-vivo transmission, and the electron emission efficiency is high; and the low-dimensional material has the characteristics of no dangling bond, stable property, high melting point, difficulty in damage, good stability, long service life and the like.

In an electron tube, the meta-surface emits an electron in response to an incidence of the electromagnetic wave. The first and second electrodes are spaced away from each other, and apply potentials different from each other to the meta-surface. A holder is disposed in the housing and holds the electron emitter. A first conductive line of the meta-surface is electrically connected to the first electrode. A second conductive line of the meta-surface is spaced away from the first conductive line, and is electrically connected to the second electrode. The first conductive line extends from the first electrode to the second conductive line. The second conductive line extends from the second electrode to the first conductive line.

A metasurface element includes a support body and a metasurface formed on a surface of the support body. The metasurface includes a metal pattern that is disposed to emit an electron in response to incidence of an electromagnetic wave, and a metal layer that contains an alkali metal and is formed on the metal pattern. The metal layer extends beyond the metal pattern to reach a region on the surface of the support body, the region being not formed with the metal pattern.

A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.

Examples include a photoelectric film that emits electrons by irradiation of an excitation light, an extraction electrode for extracting emitted electrons, and a differential exhaust diaphragm through which extracted electrons pass. A control unit controls an electric field formed in relation to the extraction electrode to make the extracted electrons pass through the differential exhaust diaphragm both in a first case in which the excitation light is irradiated to a first position of the photoelectric film, and in a second case in which the excitation light is irradiated to a second position different from the first position of the photoelectric film.

This invention discloses a horizontally structured nano-air channel transistor based on multilayer thin films, belonging to the field of transistor technology. It includes an insulating substrate, a multilayer thin film cathode and anode disposed on its front side, with a nano-air channel formed between the cathode and anode. The multilayer thin film cathode is composed of alternating layers of conductive and insulating thin films. The anode is composed of a conductive material, or is composed of alternating layers of conductive and insulating thin films. Conductive sidewalls are also provided on one side of the multilayer thin film cathode and anode for electrical connection between the conductive thin film layers. This invention achieves a large field enhancement factor through the sharp edge structure of the multilayer thin films and effectively increases the field emission current of the transistor by utilizing the tandem emission of the multilayer thin films. Simultaneously, because vertical etching or corrosion processes can easily achieve 90-degree sidewalls, the isomorphism of the emission structure of each layer in the multilayer thin film is maintained, enabling simultaneous electron emission from the multilayer thin films in series to maintain a stable emission current.

An electron tube includes a vacuum container having a translucent substrate; a photoelectric element disposed on the inner surface of the translucent substrate; an anode disposed within the vacuum container; and a prism. The prism has a bottom surface bonded to the outer surface of the translucent substrate; a light incident surface; and a light reflecting surface that further reflects light that enters the photoelectric element via the prism and the translucent substrate and is reflected at the interface between the photoelectric element and the vacuum space, causing the light to enter the photoelectric element again. The light reflecting surface has an outwardly convex curved surface. The light incident surface is located inward of an imaginary spherical surface extending along the light reflecting surface.

A photomultiplier includes a housing including a proximal end and a distal end, an optical window disposed at the proximal end of the housing, an end-wall plate disposed at the distal end of the housing, a feedthrough that penetrates through the end-wall plate, and a gas electron multiplier (GEM) board disposed between the optical window and the end-wall plate.

An electron emitter comprises a tapered-shaped emission tip having a base face and an apex opposite the base face, the emission tip consisting essentially of semiconductor material, the semiconductor material being partially doped n-type and partially doped p-type, wherein the base face is doped one of n-type or p-type and the apex is doped opposite type of the base face and a p-n junction is thereby formed at a position between the base face and the apex.

To provide an electron source that can improve performance.SOLUTION: According to an embodiment, an electron source 110 includes a first member 30. The first member includes a first region 31 including InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, x+y≤1) and a second region 32 including diamond including boron. In one example, the first member is irradiated with light, causing electrons to be emitted from the second region. This allows electrons to be supplied from the first region to the second region with relatively low energy (e.g., light), resulting in highly efficient electron emission.SELECTED DRAWING: Figure 1

The invention provides an electron source, which comprises an optical fiber, a conductive connection layer and an electron excitation layer, the conductive connection layer is arranged on the outer surface of the optical fiber, the electron excitation layer is arranged on a laser light emitting path of the optical fiber and is electrically connected with the conductive connection layer, and the electron emission layer comprises the electron excitation layer which is electrically connected with the conductive connection layer. The electron excitation layer comprises a one-dimensional material and a zero-dimensional material, and laser emitted by the optical fiber can directly irradiate the electron emission layer, so that the electron excitation layer is excited by the laser and emits electrons. The electron source provided by the invention is long in service life and good in stability.

A night vision system along with an image intensifier tube and method for forming the tube are provided. The night vision system incorporates the image intensifier tube in both an analog channel as well as a digital channel, with an addressable display within the analog image intensifier tube analog channel configured to create an electronically addressable output. An analog image intensifier tube is included in the digital imager for presenting binary digital signals representative of an image, or of symbol indicia, and registering those digital representation from the digital imager onto one or more electron multipliers of the analog image intensifier tube within the analog channel. The provided night vision system also utilizes a cathodoluminescent screen, which is a highly efficient light source that reduces system power.

A photocathode epitaxial structure. The photocathode epitaxial structure includes a binary compound substrate material. The photocathode epitaxial structure further includes an active device absorber layer forming a portion of a p-type device photocathode formed on the binary compound substrate material. The active device absorber layer comprising a material structure configured to be lattice matched with the substrate material to reduce strain to allow charge carriers to go further in the active device absorber layer implemented in the photocathode of a nightvision system.

An electron beam device has a semiconductor ultraviolet light source (SULS), a photocathode attached to the SULS, a photocathode electrode attached to the photocathode, an anode having a first surface facing towards a first surface of the photocathode, and a separation layer located between and in contact with the first surface of the photocathode and the first surface of the anode. The separation layer is configured to create a gap between the first surface of the photocathode and the first surface of the anode. The SULS generates photoelectrons at the first surface of the photocathode that are transmitted via the gap to the anode. The SULS, the photocathode, the photocathode electrode, the anode, and the separation layer are configured together as a monolithic integrated element. An alternate electron beam device has a SULS spaced from the photocathode, an anode located between the SULS and the photocathode, a controlling electrode located between the anode and the photocathode, and a separation layer located to create a gap.

An object is to provide an electron gun, an electron beam applicator, and a multi-electron beam forming method that can form more electron beams than the number of lenses of a multi-lens array. The object can be achieved by an electron gun including: an electron source configured to generate releasable electrons; an anode configured to form an electric field between the electron source and the anode, extract the releasable electrons by the formed electric field, and form electron beams; and a multi-lens array, in which when electron beams with which the multi-lens array is irradiated are defined as first electron beams, m first electron beams (m is any integer of two or greater) are formed, the multi-lens array has n lenses (n is any integer of two or greater), and when electron beams emitted from the multi-lens array are defined as second electron beams, a maximum of m x n second electron beams can be formed.

The invention relates to the technical field of electron emission, and discloses a large-current pulse micro-channel plate electron emission source and an X-ray generation device. According to the electron emission source, an electron emission function layer at the head end of an MCP assembly is excited by adopting a rapidly regulated and controlled UV LED light source, and ultrafast time sequence modulation of electron beams is realized through an avalanche multiplication process of the electron beams in the MCP. By adopting a specific high-lead, low-alkali or alkali-free glass component or ceramic substrate composite functional film layer structure, the MCP assembly has long service life stability of low resistance, high current output and high power density operation. Independent bias voltage and gating voltage synchronous with electronic pulse are applied to the MCP assembly through the driving control unit, accurate thermal management is carried out in combination with a pulse-charging circulation mode, and the problems of charge compensation and thermal limitation under large current output are effectively solved. The electron emission source breaks through the bottleneck, supports peak current density exceeding 100 mA / cm under submicrosecond pulse, and realizes hundred microampere level steady-state current output under millisecond level long pulse.

A measurement device for measuring a photocathode current of a photomultiplier tube, the measurement device includes: (a) a voltage amplifier configured to amplify a shunt resistor voltage proportional to the photocathode current; (b) a leakage tolerant circuit configured to generate a first leakage tolerant voltage, based on a first amplified voltage and a first reference voltage having an absolute value that exceeds an absolute value of a leakage associated with the measurement device; (c) a voltage to current transducer that is configured to convert the first leakage tolerant voltage to a first leakage tolerant current; and (d) an output unit that is configured to convert the first leakage tolerant current to an output voltage that is indicative of the photocathode current.

Image intensifier systems incorporating a microchannel plate (MCP) and methods for producing the same are disclosed. In some examples, a device is disclosed that includes a first substrate having a radiation-receiving first surface and an opposed second surface through which electromagnetic radiation is transmitted. A second substrate is coupled to the first substrate to define a vacuum cavity therebetween. An electron-emitting photocathode is disposed within the vacuum cavity for generating electrons from electromagnetic radiation transmitted through the second surface. A microchannel plate is disposed within the vacuum cavity and defines microchannels extending from an input end to an output end. Each of the microchannels is configured to generate electrons in response to an electron generated by the photocathode being received through the input end of the respective microchannel. A phosphorescent layer also is disposed within the vacuum cavity and adjacent the output ends of the microchannels of the microchannel plate.

The invention relates to an electron source, a preparation method of the electron source, an electron gun and application of the electron source. The electron source includes an optical fiber and an electron emission layer. The optical fiber comprises a fiber core used for transmitting laser and a wrapping layer wrapping the fiber core. A light leakage notch is formed in the light outlet end of the optical fiber along the radial direction of the optical fiber; the electron emission layer is arranged on the bottom wall surface of the light leakage gap, the electron emission layer at least comprises an electron excitation layer, the bottom wall surface of the light leakage gap is constructed to be a plane, and the projection of the electron excitation layer on the bottom wall surface covers the projection of the fiber core on the bottom wall surface. Low-dimensional materials such as zero-dimensional materials, one-dimensional materials or two-dimensional materials are adopted as materials of the electron excitation layer, the low-dimensional materials have the atomic-scale thickness, excited electrons can be emitted without in-vivo transmission, and the electron emission efficiency is high; and the low-dimensional material has the characteristics of no dangling bond, stable property, high melting point, difficulty in damage, good stability, long service life and the like.

The photocathode comprises, in this order, a substrate, a photoelectric conversion layer containing two or more alkali metals, and a surface layer containing tellurium and cesium. In the photocathode, the tellurium content measured by X-ray fluorescence analysis in the thickness direction from the outermost surface of the surface layer is 0.15 μg / cm 2 The following is the result.

The invention relates to a composite photocathode which comprises a substrate, a semiconductor photocathode layer, an insulating supporting structure and a grid electrode, the substrate comprises a substrate body and a micro-nano structure, the micro-nano structure is formed on the upper surface of the substrate body, the semiconductor photocathode layer and the insulating supporting structure are both arranged on the substrate body, and the grid electrode is arranged on the substrate body. The semiconductor photocathode layer covers the micro-nano structure, the grid electrode is located above the semiconductor photocathode and is supported by the insulating supporting structure, and the insulating supporting structure is used for electrically isolating the grid electrode from the substrate; the grid electrode is provided with at least one through hole, the grid electrode and the semiconductor photocathode layer are arranged at intervals, bias voltage exists between the grid electrode and the substrate, the bias voltage forms a bias electric field, and the micro-nano structure is arranged to locally enhance the bias electric field.

Semiconductor-based direct emitter (33) for use in surface chemistry, comprising: an electron emitter structure (11), comprising: a) an atmosphere-stable electron emission layer (17) made of a mixture of metals, wherein the atmosphere-stable electron emission layer has a first side and a second side; and b) an electron acceleration structure (18) on the first side of the electron emission layer (17) with at least one electrode (22) electrically insulated from the electron acceleration structure (18) to form an acceleration section configured to allow electrons (26) released from the electron emission layer (17) to be selectively accelerated by generating an adjustable electric field, wherein the acceleration section has a length l in a range from 10 nm to 1 µm, an insulating layer (30) arranged on the second side of the electron emission layer (17) and having a tunnelable layer thickness, and a semiconductor (34) arranged on one side of the insulating layer (30) facing away from the electron emission layer (17), which has alternating n-doped regions (36) and p-doped regions (38), wherein the n-doped regions (36) and the p-doped regions (38) have boundary regions (39) adjacent to the insulating layer (30).

The application provides a kind of optical input window of cascade enhancement type for photocathode, belong to the field of optoelectronic devices, optical input window of cascade enhancement type for photocathode includes: substrate layer and cascade structure;Cascade structure is located between substrate layer and photoemissive layer;Cascade structure is used to modulate incident light;Cascade structure is in turn nano pattern layer, waveguide layer and plasmonic layer along the direction of incident light;Incident light enters from one side of substrate layer, is deflected after being modulated by nano pattern layer, forms waveguide in waveguide layer, so that plasmonic layer produces localized plasmon resonance effect, to promote photoemissive layer to carry out photoabsorption.The application improves the quantum efficiency of photocathode, and further improves the photoelectric response capability of photoelectric device.

The present invention discloses a photoelectric energy conversion device and a preparation method, comprising a cathode substrate and an anode substrate arranged in parallel; the cathode substrate comprises a transparent cathode substrate, a cathode electrode layer located on the cathode substrate, a cathode growth source film located on the cathode electrode layer, cathode nanowires located on the cathode growth source film, and a covering layer of thermoelectric material coated on the surface of the cathode nanowires; the anode substrate comprises a transparent anode substrate and an anode electrode layer located on the anode substrate; the cathode substrate and the anode substrate are separated and fixed by a high-voltage insulating separator so that a vacuum gap is left between the cathode substrate and the anode substrate. During operation, the nanowire cathode emits electrons under the combined action of external light and an external electric field applied by the anode. During the electron emission process, due to the action of Joule heat, a temperature gradient exists in the nanowire. The temperature gradient causes an axial potential to appear in the thermoelectric material, which increases the emission current, thereby improving the conversion efficiency.

A night vision system along with an image intensifier tube and method for forming the tube are provided. The night vision system incorporates the image intensifier tube in both an analog channel as well as a digital channel, with an addressable display within the analog image intensifier tube analog channel configured to create an electronically addressable output. An analog image intensifier tube is included in the digital imager for presenting binary digital signals representative of an image, or of symbol indicia, and registering those digital representation from the digital imager onto one or more electron multipliers of the analog image intensifier tube within the analog channel. The provided night vision system also utilizes a cathodoluminescent screen, which is a highly efficient light source that reduces system power.

The invention discloses a low-temperature hydrophilic bonding method for a GaAs photocathode and AVG glass, and the method comprises the following steps: depositing a barrier / flexible SiO2 isolation layer on the surface of the clean AVG glass to obtain deposited AVG glass; after the AVG glass and the GaAs material are cleaned and deposited, surface activation is carried out by adopting a super-atomic beam advanced activation method, and to-be-laminated AVG glass and a to-be-laminated GaAs material with a large number of hydroxyl groups formed on the surface are obtained; laminating the to-be-laminated AVG glass and the to-be-laminated GaAs material which are aligned at room temperature in a manner of unfolding from one side to the other side in a rolling laminating manner; and annealing to obtain the bonding device. The method comprises the following steps: depositing a barrier / smooth SiO2 buffer layer on the surface of AVG glass to isolate transferable ions and reduce the interface modulus, and activating by using a super-atomic beam advanced activation technology to form hydroxyl groups; and after lamination, low-temperature segmented annealing is adopted, so that hydroxyl groups are condensed into stable chemical bonds, meanwhile, thermal stress is released at a controllable rate, and the stress peak value and warping caused by CET imbalance are reduced to the maximum extent.

A photocathode is formed with a first absorber assembly on a first substrate for a first spectral band and a second absorber assembled on a second substrate for a second spectral band. The second substrate is different from the first substrate, and the second spectral band is different from the first spectral band. The first absorber and the second absorber can be joined using a direct semiconductor wafer bonding process. The integration of a second absorber such as an SWIR absorber layer can extend the spectral response of image intensifier tubes.

This invention relates to a photodetector comprising a support layer (10), a grating structure (20), and an active layer (30). The grating structure (20), referred to as a photonic crystal structure, comprises a pattern (22.1) and a non-zero constant thickness e. ccs The structured layer (22) is formed by the continuous sublayer (22.2), and the pattern (22.1) widens along the direction toward the continuous sublayer (22.2). Furthermore, the size of the photonic crystal structure (20) is such that the structured layer (22) forms a photonic crystal that supports at least one guided mode that can be excited by the incident light of interest. The photonic crystal is optically coupled to the active layer (30), such that the guided mode is optically confined in the structured layer (22) and the active layer (30).