89 results about "Charge compensation" patented technology

The invention belongs to the technical field of nano fluorescent powder, and particularly relates to Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing Ca (NO3) 2 and RE (NO3) 3 solutions in proportion to prepare a cation solution, dropwise adding a certain amount of H3PO4 to prepare a mixed solution, adjusting the pH value by using a charge compensation agent, uniformly stirring, performing ultrasonic dispersion, performing hydrothermal reaction on the obtained solution, and purifying to obtain the final product Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder. The charge compensation agent is at least one of KOH and LiOH. By utilizing the methods, the invention provides the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder taking K < + > / Li < + > as the charge compensation agent, and the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder has the advantages of thermal stability, color stability and high luminescence, and is suitable for temperature sensing, cheilogramma and anti-counterfeiting detection.

The invention discloses a charge compensation MOSFET with a graded epitaxial distribution and a method of manufacturing the same. A vertical power semiconductor transistor device includes: a drain region of a first conductivity type; a body region of a second conductivity type; a drift region of the first conductivity type separating the body region from the drain region; a source region of the first conductivity type separated from the drift region by the body region; a gate trench extending through the source region and the body region and into the drift region, the gate trench including a gate electrode; and a field electrode in the gate trench or in the separate trench. The drift region has a generally linearly tapered first doping profile that increases from the body region toward a bottom of the trench including the field electrode, and a tapered second doping profile that increases from an end of the first doping profile toward the drain region at a greater ratio than the first doping profile.

The invention discloses a multi-wavelength light-induced photoelectron charge compensation device and method for SIMS analysis, and the device comprises an adjustable wavelength light source which is used for generating light of which the wavelength is adjustable in a range from ultraviolet to visible light; the optical system is used for guiding the light generated by the adjustable wavelength light source to the surface of a sample bombarded by an SIMS primary ion beam, and ensuring that a photon beam spot is accurately overlapped with an ion beam bombarded area; and the control unit is used for dynamically adjusting the wavelength and the light intensity of the adjustable wavelength light source according to the stability of the SIMS secondary ion signal so as to optimize photoelectron emission and realize charge neutralization. The invention has the following beneficial effects: the technical scheme avoids physical damage of the electron gun to the sample and damage to the vacuum environment; the wavelength can be adjusted to cover ultraviolet light to visible light, and the device is suitable for various materials.

The invention discloses an up-conversion luminescence time sequence regulation color-changing material, color-changing ink and a preparation method and application thereof, the chemical general formula of the material is SrMoO4: xYb < 3 + >, yHo < 3 + > and zNa < + >, x is the molar doping amount of Yb < 3 + >, y is the molar doping amount of Ho < 3 + >, z is the molar doping amount of Na < + >, 0.10 < = x < = 0.40, 0.01 < = y < = 0.03, and 0.21 < = z < = 0.31. According to the material, under the condition of charge compensation ion Na < + > co-doping, the solid solubility of sensitizer ions Yb < 3 + > in SrMoO4 crystal lattices is remarkably improved, and under the condition of Na < + > excessive charge compensation, the material is remarkably superior to the upconversion luminescence effect of other charge compensation enhanced heterovalent doping systems reported in literatures; the color-changing ink for advanced dynamic anti-counterfeiting and the application method thereof are designed and developed by combining the remarkably enhanced up-conversion luminescence and the excellent time sequence regulation color-changing characteristic of the material, and the color-changing ink has a wide application prospect in the field of dynamic fluorescent anti-counterfeiting.

A semiconductor device includes a semiconductor layer having a first conductivity type, a well region within the semiconductor layer having a second conductivity type opposite to the first conductivity type, a source region having the first conductivity type within the well region, and a charge compensation region formed by injection below the well region within the semiconductor layer. The source region is adjacent to a channel region within the well region. A method for forming a semiconductor device includes forming a well region having a second conductivity type within a semiconductor layer having a first conductivity type opposite to the second conductivity type, forming a source region having the first conductivity type within the well region, and injecting ions into the semiconductor layer to form a charge compensation region below the well region within the semiconductor layer. The source region is adjacent to a channel region within the well region.

The invention provides a semiconductor device and a manufacturing method thereof, a drift region is arranged to be a layered structure along the height direction, a deep groove is formed in the drift region, a plurality of epitaxial layers are epitaxially grown layer by layer from the inner wall of the deep groove in the deep groove, and the doping type of each epitaxial layer is opposite to that of the drift region. The sub-drift layers are in first concentration distribution from bottom to top, and the epitaxial layers are in second concentration distribution from the inner wall of the deep trench to the center of the deep trench. Meanwhile, the first concentration distribution and the second concentration distribution have a layer-by-layer matching relationship. By means of the structure, on the transverse cross section of the semiconductor device, the doping concentration between the corresponding sub-drift layer and the epitaxial layer is mutually counteracted in the aspect of integration, so that a quasi-electric neutral region is formed near the side wall of the deep groove, and approximate transverse charge compensation is realized by the charge quantity in a local region. Therefore, the transverse charge balance is realized under the condition that the basic device structure is not changed, so that the compromise relationship between the breakdown voltage and the on-resistance is obviously optimized.

The application provides a preparation method of a specific stoichiometric ratio of O3 type layered sodium ion battery positive electrode material. By finely controlling the ratio of Ni, Fe and Mn, the main redox activity is controlled in a specific electric pair range, the structure stability and the electrochemical performance can be improved, and the phase transition can be effectively inhibited. The performance improvement is attributed to the favorable electronic structure given by the specific component ratio, which promotes the Mn 3+ / Mn 4+ and Fe 2+ / Fe 3+ redox couples to participate in cooperation, thereby expanding the charge compensation window and improving the structure stability. The precursor material is obtained by a simple coprecipitation method, and the obtained material has good consistency and low cost after further high-temperature calcination. The prepared sodium ion battery positive electrode material has excellent performance and is suitable for large-scale production.

The application discloses a method for improving the performance of oxide solid electrolyte by calcium doping, and belongs to the technical field of solid-state batteries. The method comprises the following steps: mixing raw materials containing a calcium source, a sodium source, a rare earth source and a phosphorus source to obtain a precursor; sintering the precursor to obtain a calcium-doped sodium superionic conductor precursor; and performing ion exchange on the precursor and a lithium salt to obtain a calcium-doped oxide solid electrolyte with a chemical formula of Li 3+ x La 1‑x Ca x (PO4)2, and 0 < x <= 0.1. By partially replacing lanthanum ions with calcium ions, lithium vacancies are introduced, the crystal lattice is relaxed, and the lithium ion migration path is optimized by using the charge compensation mechanism, so that the room-temperature ionic conductivity of the material is significantly improved. The method has low raw material cost, simple process and strong universality, can be expanded to various oxide solid electrolyte systems such as NASICON and garnet, and has good application prospect in the field of solid-state lithium ion batteries.

The application provides a chromium-titanium bimetallic layered sulfide positive electrode material and a preparation method and application thereof, and belongs to the technical field of lithium ion battery materials. x Ti y S2, and x+y=1, belongs to a hexagonal O1 type structure, and a space group is Pm1. Micro-morphology analysis shows that the material is in a granular form, a particle size distribution is 2-15 mu m, a particle surface is in a layered structure feature, and each element is uniformly distributed on the particle surface and in a bulk phase. The capacity of the material is mainly derived from oxidation and reduction between titanium and sulfur, chromium has a stable structure frame effect, and does not participate in a charge compensation process. Electrochemical analysis shows that the LiCr 2 / 3 Ti 1 / 3 S2 positive electrode material has a reversible capacity of 223 mAh g ‑1 , and is close to a theoretical value of the system positive electrode material. In addition, the material shows excellent rate performance and cycle stability, and still maintains a capacity retention rate of 80% after 330 cycles.

The application relates to the technical field of semiconductor power devices, and discloses a SiC MOSFET structure with a low input capacitance and a STI structure and a manufacturing method thereof. The structure comprises a silicon carbide substrate, an N-type drift layer, a P well, and a heavily doped N region and a P region. A shallow groove is embedded in the surface of a JFET region between adjacent P wells, and a silicon dioxide layer is filled in the shallow groove to form a STI structure. The upper surface of the structure is flush with the upper surface of the unetched drift layer. The sidewall and the bottom of the shallow groove are covered with an N-type charge compensation layer with a higher doping concentration. A thin gate oxide layer covers the surface of the P well and the STI structure, and a gate electrode is arranged on the thin gate oxide layer. The application increases the insulating physical distance between the gate and the epitaxial layer by introducing the STI structure, reduces the parasitic capacitance and the high-frequency switching loss, compensates for the problem of the rise of the conduction resistance caused by the narrowing of the channel by using the N-type charge compensation layer, eliminates the physical step through surface planarization treatment, and improves the blocking withstand voltage level of the device.

The invention discloses a preparation method of an yttrium oxide-zirconium oxide composite coating, which comprises the following steps: step S11, mounting a cleaned and dried glass substrate on a rotary base frame table in a coating chamber, and introducing argon plasma into the coating chamber to bombard and clean the surface of the glass substrate; and S12, argon and oxygen are introduced into the coating chamber, and the yttrium target and the zirconium target are started at the same time for magnetron sputtering, so that the yttrium oxide-zirconium oxide composite coating is deposited on the surface of the glass substrate which rotates in a reciprocating manner. The charge compensation effect is introduced through Zr < 4 + > doping, so that the oxygen vacancy concentration in the coating is reduced, and the visible light transmittance and chemical stability of the coating are improved. And meanwhile, through formation of zirconium oxide, columnar crystal growth of yttrium oxide is broken, so that the microstructure of the coating is optimized, and the coating has good etching resistance.

The application relates to the technical field of inorganic photoluminescence materials, and discloses a rare earth doped layered stannate-based white light fluorescent powder material and a preparation method thereof, a chemical molecular formula of which is A1-xSn2-xO6:Eu3+, wherein 0 < x <= 0.05, A is one or more divalent alkali earth metal ions in Ca, Sr and Ba, and is doped in different proportions, the A provides a red light emission component, the A provides a blue and yellow light emission component, the emission intensity of the red light and the blue and yellow light can be adjusted by regulating and the doping proportion, the ionic radius of the A is similar to that of the A, and the A substitutes the lattice position. Through the synergic doping of the A and the A and the proportion regulation, the charge compensation and the lattice position optimization of the A and the A are combined, the accurate matching of the red light and the blue and yellow light emission intensity of the fluorescent powder is realized, white light emission effects with excellent color rendering and stable color tone are obtained, and the problems of red light loss or light emission efficiency decay caused by the mixing of multi-color fluorescent powder in traditional white light LED fluorescent powder are effectively overcome.

The invention relates to the technical field of electron emission, and discloses a large-current pulse micro-channel plate electron emission source and an X-ray generation device. According to the electron emission source, an electron emission function layer at the head end of an MCP assembly is excited by adopting a rapidly regulated and controlled UV LED light source, and ultrafast time sequence modulation of electron beams is realized through an avalanche multiplication process of the electron beams in the MCP. By adopting a specific high-lead, low-alkali or alkali-free glass component or ceramic substrate composite functional film layer structure, the MCP assembly has long service life stability of low resistance, high current output and high power density operation. Independent bias voltage and gating voltage synchronous with electronic pulse are applied to the MCP assembly through the driving control unit, accurate thermal management is carried out in combination with a pulse-charging circulation mode, and the problems of charge compensation and thermal limitation under large current output are effectively solved. The electron emission source breaks through the bottleneck, supports peak current density exceeding 100 mA / cm under submicrosecond pulse, and realizes hundred microampere level steady-state current output under millisecond level long pulse.

The application relates to the technical field of battery materials, and discloses a lithium secondary battery positive electrode coating material as well as a preparation method and application thereof. 3+z Nb 1‑ x M x O 4‑y R y wherein M is selected from one of Fe, Ti, Mn, Mo, W, V, Ta and Cr; R is selected from one of F, Cl, Br and I; 0<=x<1, 0<=y<=4, and the values of x, y and z satisfy the charge balance of the positive electrode coating material. The application integrates the triple functions of thermodynamic interface protection, fast ion conduction and charge compensation in a single material through cation, anion or anion-cation co-doping design based on Li3NbO4 as a matrix; the positive electrode coating material can significantly reduce the solid-solid interface impedance in a full solid-state battery, improve the first circle coulomb efficiency, and greatly improve the long cycle stability of an electrode; meanwhile, the positive electrode coating material can effectively inhibit the decomposition of high-voltage electrolyte in a traditional liquid battery, and improve the cycle life of a positive electrode material.

The invention discloses a low-temperature charging compensation method and a new energy source vehicle. The low-temperature charging compensation method comprises the steps that whether the current lowest monomer temperature Tmin is lower than a preset low-temperature threshold value or not is judged; if yes, charging preheating is carried out, and charging compensation is carried out in the charging preheating process; and if not, a charging and heating stage is entered, the WPTC continuously works to heat the battery, the battery charging window is released, and the battery is allowed to be charged. According to the low-temperature charging compensation method and the new energy material source vehicle, when the current lowest monomer temperature Tmin is lower than the preset low-temperature threshold value, the charging preheating process based on the charging compensation strategy is carried out, the low-temperature charging efficiency of the new energy material source vehicle is improved, and the charging waiting time is shortened; the charging current value request problem when the battery temperature is below 0 DEG C is optimized, the charging energy complementing efficiency is improved, and the low-temperature charging problem when the Tmin is below-20 DEG C can be solved.

The application discloses a driving circuit and a method thereof of a display panel, the display panel and a display device, and relates to the technical field of display. The circuit comprises a picture detection module, the picture detection module is arranged to detect a picture scene type of an input picture, and determine a picture detection signal according to the picture scene type; a compensation trigger module, a signal trigger end of the compensation trigger module is electrically connected with a first signal interface of the picture detection module, the compensation trigger module is arranged to receive the picture detection signal sent by the picture detection module, and trigger a level signal of a heavy load picture according to the picture detection signal, and generate a clock signal; and a charging compensation module, a signal input end of the charging compensation module is electrically connected with a signal output end of the compensation trigger module, the charging compensation module is arranged to perform charging compensation according to the clock signal sent by the compensation trigger module. The application aims to improve the surface uniformity of a super-large size screen picture display.

The application discloses a pixel circuit, a driving method thereof and a display panel. The pixel circuit comprises a light-emitting module, a driving module, a coupling module, a second voltage transmission unit and a voltage interval unit. The second voltage transmission unit is connected between a first power supply and a first end of the driving module, and is used for transmitting a voltage of the first power supply to the first end of the driving module in a compensation stage. A first end of the coupling module is connected with a control end of the driving module. The voltage interval unit is connected between a second end of the driving module and a second end of the coupling module, and is used for being turned on in the compensation stage, so that the first power supply charges the coupling module, and a threshold voltage of the driving module is written to the second end of the coupling module. Through the charging compensation mode, the dispersion of the threshold voltage of the driving module is compensated, the compensation of the positive or negative bias of the threshold voltage is realized, the display uniformity is improved, and the display effect is improved.

The application discloses a displacement detection circuit and piezoelectric circuit of a piezoelectric actuator. The piezoelectric actuator is used to generate haptic feedback according to a received haptic voltage signal under external force application. The displacement detection circuit comprises a charge storage element for detecting a first charge generated by the piezoelectric actuator due to deformation; a compensation circuit for performing multiple charging operations or discharging operations on the charge storage element to provide a second charge opposite to the first charge to the charge storage element; a counting circuit for counting the number of charging operations or discharging operations of the compensation circuit to obtain a counting value; and a logic output circuit for calculating the total amount of the second charge provided by the compensation circuit according to the counting value, and obtaining the real-time displacement amount of the piezoelectric actuator according to the total amount of the charge, so that the displacement amount of the piezoelectric element in the haptic feedback process can be detected without setting a sensor, and the circuit is simplified, the cost is reduced, the product performance is improved, and the power consumption is reduced.

This application discloses a glass powder, a conductive paste, a conductive electrode, and a crystalline silicon solar cell, relating to the field of semiconductor technology. The glass powder, by weight, comprises the following components: 56.5 mol%–72.5 mol% of a first glass forming body; 12 mol%–22 mol% of a glass intermediate; 7.5 mol%–14.5 mol% of a corrosive oxide; and 2.5 mol%–10 mol% of a modifier. In this application, the amount of corrosive oxide is limited to provide the etching activity required for effective contact formation while suppressing excessive chemical etching. The glass intermediate provides cations with high field strength, which form strong ionic covalent interactions with oxygen, thereby enhancing the bonding strength of the glass network. The modifier provides high-valence cations to adjust the charge compensation and coordination environment in the network to obtain good structural stability.

The invention discloses a BMS (Battery Management System) metering self-correction method and device for sensing an internal state, and relates to the technical field of battery management. The method comprises the following steps: acquiring basic information of a target battery; based on the basic information, a charge compensation relation based on a baseline charge state is mined by introducing the baseline charge state, and an aging compensation relation based on an aging factor and battery capacity attenuation is mined by introducing the aging factor; performing sample driving training according to the baseline charge state, and constructing an electric quantity metering module; and performing battery electric data sampling, performing electric quantity metering in combination with an electric quantity metering module, and determining the battery electric quantity based on compensation of a real-time charge state and a real-time aging factor. The technical problem of inaccurate measurement of the electric quantity of the battery caused by the aging of the battery in the prior art is solved, and the technical effects of accurately measuring the electric quantity in the whole life cycle of the battery, improving the monitoring reliability of the wireless BMS and prolonging the service life of the battery are achieved by adaptively compensating the aging effect.

The application discloses a successive approximation analog-to-digital converter and relates to an analog circuit, which comprises a capacitor array composed of an N-end capacitor array and a P-end capacitor array, which is used for sampling a signal and outputting a first upper plate voltage V N and a second upper plate voltage V P ; a comparator, which is used for comparing the first upper plate voltage V N and the second upper plate voltage V P ; a logic circuit, which is used for controlling switch switching in the N-end capacitor array and the P-end capacitor array according to a comparison result, so that the voltage under a corresponding capacitor is switched from a common-mode voltage VCM to a first reference voltage VREFP or a second reference voltage VREFN; the logic circuit is further provided with control logic for controlling an RRN circuit; and the RRN circuit is embedded at a power supply of the SAR ADC, so that the RRN circuit is simultaneously connected to a delivery line of the first reference voltage VREFP and the second reference voltage VREFN. The application improves the charge compensation effect of a ripple neutralization circuit on an ADC, reduces the power supply ripple of an on-chip circuit, and greatly improves the signal-to-noise ratio and the spurious-free dynamic range of the SAR ADC.

A driver includes a data voltage output terminal electrically coupled to a data line through a data line switch of an electro-optical panel, a capacitor driving circuit configured to output first to nth capacitor driving voltages corresponding to gradation data to first to nth capacitor driving nodes, a capacitor circuit including first to nth capacitors provided between an output node and the first to nth capacitor driving nodes, a processing circuit configured to calculate an excess / deficient charge amount of the output node when the data line switch is turned on, and a charge compensation circuit configured to inject into the output node or discharge from the output node a compensation charge based on the excess / deficient charge amount calculated by the processing circuit, by using a charge compensation capacitor circuit.

The invention belongs to the technical field of display driving, and particularly relates to a gate driving circuit and a display panel, the gate driving circuit comprises N cascaded gate driving units, and each gate driving unit comprises a pull-up module configured to pre-charge a driving control node according to an (n-i) th level transmission signal output by an (n-i) th level output module; the output module is configured to output a stage transmission signal of the current stage and at least two gate driving signals under the action of the driving voltage on the driving control node and at least two clock signals; the charge compensation module is configured to be pre-charged to an initial compensation voltage under the action of the (n-i) th level transmission signal, and when the driving voltage of the driving control node is within a preset voltage threshold range, in at least two driving signal output periods of the output module, the (n-i) th level transmission signal is output to the (n-i) th level transmission signal; and the control node is driven to maintain the target driving voltage under the action of the initial compensation voltage and the external compensation signal. The stability of the gate driving voltage can be improved.

The invention discloses an MOS (Metal Oxide Semiconductor) transistor grid charge balancing method and system for parasitic capacitance charge counteracting logic, and relates to the field of power electronic device driving. According to the method, a gate voltage second derivative characteristic signal is extracted through a cascade analog differentiating circuit to identify parasitic capacitance transient disturbance, and asynchronous quantization is triggered to generate a digital quantized value when an amplitude exceeds a threshold value; a clockless asynchronous combinatorial logic retrieval circuit retrieves a charge compensation control index from a charge compensation lookup table; after the programmable current mirror array is decoded, the current mirror branch is selectively conducted, and quantitative compensation charges are applied to a grid node; the waveform deviation integral circuit obtains compensated waveforms, detects characteristic moments to achieve time domain synchronization, calculates a waveform deviation integral value and dynamically modifies a lookup table mapping relation to form closed-loop feedback. According to the scheme, transient disturbance and normal switching are distinguished through second derivative characteristics, synchronous sampling delay is eliminated through a clock-free architecture, and online self-adaptive optimization of compensation parameters is achieved through closed-loop negative feedback.

The application discloses a positive electrode capable of limiting lattice oxygen escape, and a preparation method and application thereof. The specific method is to add a lattice oxygen inhibitor into the positive electrode in the secondary battery. The lattice oxygen inhibitor can not only play a role of a "physical passivation film" to constrain the particle volume change and prevent direct contact between the electrode and the electrolyte, but also play a role of an "electron reservoir" to inhibit the loss of the interface lattice oxygen and the conversion of the harmful interface phase transition in a way of interface charge compensation. The two aspects greatly inhibit the lattice oxygen release of the nickel-rich layered oxide, lithium cobaltate, lithium manganate, lithium-rich manganese-based and sodium-based layered oxide positive electrode material at high temperature, weaken the chemical crosstalk reaction between the active oxygen and the organic solvent and the lithiated negative electrode. Therefore, the heat accumulation of the thermal runaway trigger point can be effectively suppressed, the occurrence of the battery thermal runaway is delayed or avoided, and the safety of the battery is improved.

A semiconductor device is disclosed. The semiconductor device includes a plurality of cell units. A cell unit includes a body region having opposite first and second surfaces, the body region having a first doping type; an implanted region extending from the first surface into the body region, the implanted region having a second doping type opposite the first doping type, wherein the implanted region includes a first sub-region; and a second sub-region located circumferentially from the first sub-region, the second sub-region having a higher doping concentration than the first sub-region. Charge compensation is provided by the high concentration of the second sub-region, thereby improving current uniformity.

The application discloses a kind of by multi-phase Eu 2+ And charge compensation agent doped blue cyan fluorescent powder and its preparation method, belong to fluorescent powder technical field, by multi-phase Eu 2+ And charge compensation agent doped blue cyan fluorescent powder molar ratio general formula is: KAlSi3O8:3mol%Eu 2+ :Xmol%M + , and 1.0≤x≤11.0, wherein M + It is selected from Li + , Na + , Rb + , Cs + Four charge compensation ions, and the ionic radius of M + With K + There is controllable difference.Benefiting from the unique structural design, the prepared fluorescent powder can emit adjustable strong blue cyan light under near ultraviolet-blue light excitation, and the luminescence thermal quenching performance, quantum efficiency and spectral stability are all significantly improved.The fluorescent powder is applied to white light LED device packaging, and the efficient and wide-spectrum blue cyan emission and cyan spectral component can be used.Only by matching with a blue light chip and a single yellow / red fluorescent powder, high-quality full-spectrum white light with high color rendering index can be realized under the conditions of simplifying packaging process and reducing cost, and the fluorescent powder shows important application prospects in the fields of healthy lighting, high-end display and precise spectral design.

The application discloses a MOS transistor gate charge balancing method and system of parasitic capacitance charge offsetting logic, and relates to the field of power electronic device driving. The method identifies parasitic capacitance transient disturbance by extracting a second derivative characteristic signal of a gate voltage through a cascade analog differential circuit, triggers asynchronous quantization to generate a digital quantization value when the amplitude exceeds a threshold value, searches a charge compensation control index from a charge compensation lookup table through a clockless asynchronous combination logic retrieval circuit, selectively turns on a current mirror branch of a programmable current mirror array after decoding to apply quantization compensation charge to a gate node, and obtains a compensated waveform through a waveform deviation integration circuit, realizes time domain synchronization when detecting a characteristic moment, calculates a waveform deviation integral value, dynamically modifies a lookup table mapping relationship, and forms a closed loop feedback. The scheme distinguishes transient disturbance from normal switching through a second derivative characteristic, eliminates synchronous sampling delay through a clockless architecture, and realizes online adaptive optimization of compensation parameters through closed loop negative feedback.

A method of operating a particle beam system comprises determining values of operating parameters of the particle beam system, and operating the particle beam system with the determined values of the operating parameters, and also recording a particle-microscopic image of a sample via the particle beam system. The operating parameters can represent at least a magnitude of a flow of a gas fed to the sample for charge compensation, a current of a particle beam directed at the sample for recording the image, a kinetic energy of the particles of the particle beam upon impinging on the sample, a scanning speed of the particle beam over the sample for recording the image, and a magnification of the recorded image.