195 results about "Charge compensation" patented technology

The invention discloses a method for detecting trace elements in a GH4169 high-temperature alloy by using secondary ion mass spectrometry, which specifically comprises the following steps: A1, firstly, carrying out necessary pretreatment on a GH4169 high-temperature alloy sample to remove surface pollution and an oxide layer; a2, selecting a time-of-flight secondary ion mass spectrometer, setting proper analysis parameters, and selecting a double-plasma O2 + ion source. The invention relates to the technical field of metal material trace chemical component analysis. According to the method for detecting the trace elements in the GH4169 high-temperature alloy by using the secondary ion mass spectrometry, a sample pretreatment process of the GH4169 high-temperature alloy is optimized, a double-plasma O2 + ion source and a low-energy electron gun charge compensation system of a time-of-flight secondary ion mass spectrometer are innovatively configured, deep analysis and a three-dimensional reconstruction algorithm are combined, and the trace elements in the GH4169 high-temperature alloy are detected. The sensitivity, the spatial resolution and the data reliability of trace element detection are obviously improved.

Disclosed in the present invention are a displacement detection circuit for a piezoelectric actuator, and a piezoelectric actuator. The piezoelectric actuator is used for generating haptic feedback on the basis of a received haptic voltage signal when an external force is applied. The displacement detection circuit comprises: a charge storage element, which is used for detecting first charges generated by a piezoelectric actuator due to deformation; a compensation circuit, which is used for performing multiple charging operations or discharging operations on the charge storage element, so as to provide the charge storage element with second charges which are opposite to the first charges; a counting circuit, which is used for counting the number of charging operations or discharging operations performed on the compensation circuit, so as to obtain a count value; and a logic output circuit, which is used for calculating, on the basis of the count value, a total charge amount of the second charges provided by the compensation circuit, and obtaining a real-time displacement amount of the piezoelectric actuator on the basis of the total charge amount. A displacement amount of a piezoelectric element during a haptic feedback process can be detected without the provision of sensors, thereby being conducive to simplifying a circuit, reducing costs, improving the product performance and reducing the power consumption.

The invention relates to the technical field of quartz sand purification processing, in particular to a purification process for improving the sodium ion removal rate of high-purity quartz sand. The technology aims at solving the technical problems that when soluble sodium salt and lattice embedded state sodium (such as Al < 3 + > charge compensation type) coexist in high-purity quartz sand, removal is not thorough through a traditional technology, and precipitates are likely to be generated. Efficient removal is achieved through a hydrothermal dissolution-acid pickling impurity removal-flotation separation synergistic mechanism. Firstly, soluble sodium salt is dissolved out preferentially under the hydrothermal condition of 65 DEG C, so that it is avoided that in subsequent acid pickling, HF reacts with the sodium salt to generate Na2SiF6 sediment; then, an HF-HCl mixed acid system is adopted to selectively etch lattice channels at 70 DEG C and open a gas-liquid inclusion, so that embedded sodium is promoted to migrate and dissolve out; and finally, separating sodium-containing gangue (such as albite) exposed by pickling through flotation. According to the process, the hydrothermal times (2-3 times) can be dynamically adjusted according to the ore characteristics, stable production of semiconductor-grade quartz sand is achieved with low energy consumption which saves more than 30% of energy compared with a chloridizing roasting process, and the process is suitable for high-valued utilization of domestic vein quartz ore.

The invention discloses a control method of a PTC heater, a battery device, a vehicle and a storage medium, and the control method comprises the steps: controlling the heater to carry out gear switching to enter a preheating mode to heat the battery when the remaining electric quantity of the battery is lower than a first preset electric quantity and the current temperature of the battery is lower than a first preset temperature; when the battery enters the charging compensation mode, controlling the heater to carry out gear switching to cooperate with the battery to carry out charging compensation; when the remaining electric quantity of the battery is larger than or equal to second preset electric quantity, the heater is controlled to conduct gear switching to enter a maximum power mode to heat the battery, and the second preset electric quantity is larger than the first preset electric quantity. The heater can heat the battery when the battery is at the preset environment temperature such as low temperature, the performance of the battery and / or the heater is improved, the working mode of the heater is dynamically determined, and the working mode of the heater is dynamically switched, so that the heater heats the battery in the target working mode and / or cooperates with the battery for charging compensation.

The invention discloses a barium ion single-doped / double-doped brookite titanium dioxide nanorod catalyst as well as preparation and application, the catalyst synthesized by a thermal decomposition method comprises brookite phase titanium dioxide and doped barium ions, and the nanorod-shaped catalyst containing oxygen vacancy defects has the width of 4-6 nanometers and the length of 20-50 nanometers. The piezoelectric property of brookite titanium dioxide is induced through doping of barium ions, charge separation is promoted through a built-in electric field, meanwhile, oxygen vacancies are induced through a charge compensation mechanism, the piezoelectric catalysis and photocatalytic efficiency is promoted, and the problems mentioned in the background technology are solved.

The invention relates to the technical field of batteries, and discloses a sodium-ion battery positive electrode material and a preparation method thereof, a sodium-ion battery and electric equipment. The positive electrode material comprises a base body and a coating layer coating the surface of the base body, and the base body comprises a layered oxide; the coating layer comprises Na < x > Mn < 1-y > M'y > O < z > F < beta > with a P2 phase, wherein 0.6 lt; xlt; 0.8, 0 lt; y is less than or equal to 0.05, 1.9 lt; z is less than or equal to 2.1, 0lt; beta is less than or equal to 0.05, and M'is selected from at least one of Ni, Fe, Co, Ti, Li and Mn. According to the sodium ion battery positive electrode material provided by the invention, on one hand, the P2-phase coating layer has good structural stability and can also remarkably improve the cycle performance of the battery, and on the other hand, the coating layer can reduce residual sodium on the surface of a matrix and can also provide charge compensation and a rapid Na < + > diffusion channel in the sodion deintercalation / intercalation process, so that the performance of the battery is improved. And the voltage drop trend in discharge is relieved, so that the battery has both capacity and cycle performance.

The invention relates to the technical field of silicon carbide semiconductor devices, in particular to an integrally-formed equal-depth double-groove SiC MOSFET structure and a preparation method thereof. According to the structure, an N + buffer layer and an N-drift layer are sequentially formed on an N-type SiC substrate, and a main groove and an auxiliary groove which are consistent in depth are formed in the surface of the N-type SiC substrate; a gate oxide layer and a polycrystalline silicon gate are sequentially formed in the main groove, and the auxiliary groove is filled with a SiC epitaxial material which is doped with the drift layer in the same type, so that a charge compensation and electric field regulation and control unit is formed; the P-type body region surrounds the trench structure and forms an N + source region, and the drain electrode is formed through a back metallization process. Through the collaborative design of the equal-depth double grooves, the uniformization of electric field distribution is realized, the on-resistance and the switching loss are effectively reduced, the thermal stability and the reliability of the device are improved, the integrated process is adopted for integration, the process is simplified, the production efficiency and the yield are improved, and the semiconductor device is suitable for high-frequency and high-voltage application scenes and has a wide industrialization prospect.

The invention belongs to the technical field of nano fluorescent powder, and particularly relates to Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing Ca (NO3) 2 and RE (NO3) 3 solutions in proportion to prepare a cation solution, dropwise adding a certain amount of H3PO4 to prepare a mixed solution, adjusting the pH value by using a charge compensation agent, uniformly stirring, performing ultrasonic dispersion, performing hydrothermal reaction on the obtained solution, and purifying to obtain the final product Ca10 (PO4) 6 (OH) 2: RE < 3 + > nano fluorescent powder. The charge compensation agent is at least one of KOH and LiOH. By utilizing the methods, the invention provides the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder taking K < + > / Li < + > as the charge compensation agent, and the Ca10 (PO4) 6 (OH) 2: RE3 + nano fluorescent powder has the advantages of thermal stability, color stability and high luminescence, and is suitable for temperature sensing, cheilogramma and anti-counterfeiting detection.

The invention discloses a graphene oxide nanofiltration membrane constructed by a charge compensation cross-linking agent and a preparation method of the graphene oxide nanofiltration membrane. The nanofiltration membrane is prepared by the following steps: cross-linking the charge compensation cross-linking agent and graphene oxide nanosheets, diluting the cross-linked nanosheet dispersion liquid, and carrying out ultrasonic treatment and suction filtration. The invention also discloses a preparation method and application of the nanofiltration membrane. According to the preparation method, a macroporous polymer membrane is taken as a supporting layer, and a charge compensation cross-linked graphene oxide nanosheet is loaded on the supporting layer in a vacuum filtration manner, so that the charge compensation cross-linked graphene oxide nanofiltration membrane is prepared. The method is simple and convenient to operate, and the interlayer electronegativity is compensated while the interlayer spacing of the nanofiltration membrane is stabilized by adopting a charge compensation cross-linking agent to be cross-linked with the graphene oxide nanosheets, so that the selectivity of the membrane is improved; meanwhile, the cross-linking agent with a sulfonic acid group improves the permeability of the cross-linked graphene oxide nanofiltration membrane due to the hydrophilicity of the sulfonic acid group.

The invention provides a chromium-titanium bimetallic layered sulfide positive electrode material and a preparation method and application thereof, and belongs to the technical field of lithium ion battery materials. The chemical general formula of the material is LiCrxTiyS2, x + y = 1, the material belongs to a hexagonal crystal system O1 type structure, and the space group is Pm1. Microtopography analysis shows that the material is granular, the particle size distribution is 2-15 [mu] m, the particle surface has a layered structure characteristic, and each element is uniformly distributed on the particle surface and in a bulk phase. The capacity of the material mainly comes from oxidation reduction between titanium and sulfur, and chromium has the effect of stabilizing a structural framework and does not participate in the charge compensation process. Electrochemical analysis shows that the reversible capacity of the LiCr2 / 3Ti1 / 3S2 positive electrode material reaches up to 223 mAh g <-1 > and is close to the theoretical value of the positive electrode material of the system. In addition, the material shows excellent rate capability and cycling stability, and still keeps the capacity retention ratio of 80% after 330 times of cycling.

The invention relates to the technical field of sensors, and discloses a capacitive touch detection circuit and method.The capacitive touch detection circuit comprises a charge compensation module, a voltage and current conversion module, an integrating capacitor, a quantization circuit module and a counter; the charge compensation module is used for performing charge and discharge compensation on the external touch capacitor and adjusting the charge quantity on the touch capacitor to be within a preset charge quantity range corresponding to the reference voltage; the voltage and current conversion module is used for converting residual charges on the touch capacitor compensated by the charge compensation module into current and outputting the current; the integrating capacitor is used for integrating the current to obtain an integrated voltage; the quantization circuit module is used for quantizing the integral voltage and controlling the integral voltage to be stabilized in a preset voltage range of the reference voltage; and the counter is used for counting the output of the quantization circuit module to obtain a digital code representing a touch capacitance value. According to the invention, the touch detection performance with high linearity, low power consumption, small area and high noise resistance can be realized.

The invention provides a charge distribution compensation circuit and method based on a touch sensing channel, and the circuit comprises a compensation moving unit which receives and processes a square wave signal, and generates and outputs a compensation charge; the distribution unit is used for receiving and transmitting the compensation charge; the receiving unit is used for generating a reference charge quantity, receiving the compensation charge output by the distribution unit and outputting a net charge quantity; wherein the compensation moving unit comprises a charge moving device, and a multi-stage operational amplifier circuit is arranged in the charge moving device. Through the cascade design of the compensation moving unit, the distribution unit and the receiving unit, a complete charge compensation path is formed, and charge compensation in a touch channel can be effectively achieved. The compensation transfer unit adopts a charge transfer device structure of a multi-stage operational amplifier circuit, so that the accuracy and the stability of charge transfer are improved, and the generation of compensation charges is more accurate.

An HVAC system includes a first heat exchange coil with a plurality of coil circuits. For each coil circuit of the plurality of circuits, there is a manifold line fluidly coupling the coil circuit to a compressor. A first controllable valve is positioned in a first manifold line coupling a first coil circuit of the plurality of coil circuits to the compressor. A second controllable valve is located in a conduit fluidly coupling the first coil circuit to a second heat exchange coil. A controller is communicatively coupled to the first and second controllable valves and operates the valves to provide charge compensation in a heating and / or cooling mode.

The invention provides a doped and coated lithium nickel manganese oxide positive electrode material, a preparation method thereof and a lithium ion battery. The lithium nickel manganese oxide positive electrode material comprises lithium nickel manganese oxide particles, the coating layer contains an F and P double-doped carbon material, and the coating layer is positioned on the outer side of the lithium nickel manganese oxide particle; wherein the coating layer contains F and P, the electron withdrawing effect of F is relatively strong, the electron activity of the coating layer can be reduced, and electrolyte decomposition and Mn < 2 + > oxidation can be inhibited; meanwhile, the compactness of the coating layer can be improved through P doping, Mn < 2 + > on the surface of the coating layer is balanced through charge compensation, and the situation of manganese dissolution is reduced, so that the cycle life of the battery is prolonged.

Provided are: a new compound exhibiting hydride ionic conduction performance with high conductivity; a method for producing the same; and a use for batteries or the like using the same.　A compound represented by general formula (I).　(I): Ba1.75-xSrxLiHaOb (In the formula, x represents a number satisfying 0<x≤1.65, b represents a number satisfying 0<b≤1.5, and a represents a number satisfying charge compensation for b.)

The invention discloses a Micro-LED device based on a charge compensation method and a preparation method of the Micro-LED device, relates to the technical field of nano luminescent materials and display, and solves the problems that the luminous efficiency of the Micro-LED device is reduced, the driving voltage is increased, the service life of the device is shortened and the like due to reduction of the crystal size during Mn < 4 + > doped fluoride nanocrystalline through Mg < 2 + > charge compensation. The Micro-LED device sequentially comprises a driving substrate layer, a blue light Micro-LED array layer, a light extraction layer, a color conversion layer and a packaging layer from bottom to top; the light extraction layer is a titanium dioxide nanoparticle layer; the color conversion layer is a Micro-LED device formed by mixing a solution of dispersed silver silicon core shell-cesium sodium manganese fluoride composite nanomaterial Ag (at) SiO2 / Cs2NaF6: Mn < 4 + > and Mg < 2 + > nanocrystal particles with a methyl methacrylate solution and coating the mixture on a substrate. By introducing the Micro-LED color conversion layer based on the charge compensation method, lattice charge unbalance is neutralized, lattice defects are reduced, and formation of a Micro-LED device with high brightness and high stability is facilitated.

The invention discloses a charge compensation MOSFET with a graded epitaxial distribution and a method of manufacturing the same. A vertical power semiconductor transistor device includes: a drain region of a first conductivity type; a body region of a second conductivity type; a drift region of the first conductivity type separating the body region from the drain region; a source region of the first conductivity type separated from the drift region by the body region; a gate trench extending through the source region and the body region and into the drift region, the gate trench including a gate electrode; and a field electrode in the gate trench or in the separate trench. The drift region has a generally linearly tapered first doping profile that increases from the body region toward a bottom of the trench including the field electrode, and a tapered second doping profile that increases from an end of the first doping profile toward the drain region at a greater ratio than the first doping profile.

The invention discloses a multi-wavelength light-induced photoelectron charge compensation device and method for SIMS analysis, and the device comprises an adjustable wavelength light source which is used for generating light of which the wavelength is adjustable in a range from ultraviolet to visible light; the optical system is used for guiding the light generated by the adjustable wavelength light source to the surface of a sample bombarded by an SIMS primary ion beam, and ensuring that a photon beam spot is accurately overlapped with an ion beam bombarded area; and the control unit is used for dynamically adjusting the wavelength and the light intensity of the adjustable wavelength light source according to the stability of the SIMS secondary ion signal so as to optimize photoelectron emission and realize charge neutralization. The invention has the following beneficial effects: the technical scheme avoids physical damage of the electron gun to the sample and damage to the vacuum environment; the wavelength can be adjusted to cover ultraviolet light to visible light, and the device is suitable for various materials.

The invention discloses a reference power supply fluctuation stabilization method for a successive approximation analog-to-digital converter, which is applied to a sectional successive approximation analog-to-digital converter. Designing a linear charge compensation circuit, and improving a reference power supply circuit of the fine quantization ADC; the reference power supply circuit of the fine quantization ADC comprises a buffer and a linear charge compensation circuit. The linear charge compensation circuit comprises a binary capacitor array used for providing compensation charges and a control circuit, serves as an auxiliary power supply circuit and is used for rapidly stabilizing reference power supply fluctuation generated by most significant bit switching of the fine quantization ADC before comparison of least significant bits, and the conversion precision of fine quantization is improved. According to the invention, the influence of the reference power supply fluctuation on the conversion precision can be reduced, and the conversion speed and the conversion precision of the SAR ADC can be improved; and meanwhile, the requirements on a high-power-consumption on-chip reference power supply driver and a large-area on-chip decoupling capacitor are greatly reduced, and the power consumption and the area overhead of the SAR ADC are reduced.

The application discloses a charging compensation method and device of a display panel. The method comprises the following steps: adjusting charging sequences of multiple rows of sub-pixels; charging the multiple rows of sub-pixels in sequence according to the adjusted charging sequences, so that the display panel displays a light-load picture of a single color; charging the multiple rows of sub-pixels in sequence according to the adjusted charging sequences, so that the display panel displays a heavy-load picture of the single color; and performing charging compensation on the heavy-load picture of the display panel according to the light-load picture. The application can improve the charging compensation effect of the display panel, and further improve the display effect of the display panel.

The present invention provides a charge distribution compensation circuit and method based on a touch sensing channel. The circuit includes: a compensation transfer unit that receives a square wave signal, processes it, generates and outputs compensation charges; a distribution unit that receives the compensation charges and transmits them; a receiving unit that generates a reference charge amount and simultaneously receives the compensation charges output by the distribution unit, and outputs a net charge amount. Among them, the compensation transfer unit includes a charge transfer device, and a multi-stage operational amplifier circuit is provided inside the charge transfer device. Through the cascaded design of the compensation transfer unit, the distribution unit and the receiving unit, a complete charge compensation path is formed, which can effectively achieve charge compensation in the touch channel. The compensation transfer unit adopts the structure of a charge transfer device with a multi-stage operational amplifier circuit, which improves the accuracy and stability of charge transfer, and makes the generation of compensation charges more accurate.

The invention discloses an up-conversion luminescence time sequence regulation color-changing material, color-changing ink and a preparation method and application thereof, the chemical general formula of the material is SrMoO4: xYb < 3 + >, yHo < 3 + > and zNa < + >, x is the molar doping amount of Yb < 3 + >, y is the molar doping amount of Ho < 3 + >, z is the molar doping amount of Na < + >, 0.10 < = x < = 0.40, 0.01 < = y < = 0.03, and 0.21 < = z < = 0.31. According to the material, under the condition of charge compensation ion Na < + > co-doping, the solid solubility of sensitizer ions Yb < 3 + > in SrMoO4 crystal lattices is remarkably improved, and under the condition of Na < + > excessive charge compensation, the material is remarkably superior to the upconversion luminescence effect of other charge compensation enhanced heterovalent doping systems reported in literatures; the color-changing ink for advanced dynamic anti-counterfeiting and the application method thereof are designed and developed by combining the remarkably enhanced up-conversion luminescence and the excellent time sequence regulation color-changing characteristic of the material, and the color-changing ink has a wide application prospect in the field of dynamic fluorescent anti-counterfeiting.

The invention relates to a passively-driven capacitor array structure, a gradual approximation type analog-to-digital converter and a method. The capacitor array structure comprises a DAC capacitor array and a compensation capacitor array connected with the DAC capacitor array, the DAC capacitor array outputs a target reference signal used for being compared with an input signal, and the compensation capacitor array comprises a first capacitor which is connected with the DAC capacitor array and used for following an initial reference voltage and sharing charges corresponding to the initial reference voltage with the DAC capacitor array; and the plurality of second capacitors are connected with the DAC capacitor array and are used for compensating charge loss in the voltage conversion process of the DAC capacitor array, so that target reference signals output by the DAC capacitor array conform to a bipartite relationship. According to the invention, passive driving is carried out through the first capacitor, and the use of high-bandwidth active driving can be avoided, so that the power consumption is greatly reduced. Meanwhile, due to the fact that the second capacitor serves as charge compensation, the first capacitor does not need to be large, and only small area expenditure is needed.

The present invention discloses a method and device for multi-scan charging compensation of an AMOLED display screen, which eliminates the bright edge phenomenon under black characters on a white background by dynamically counting and adjusting the voltage of the current row data charged. The method includes: selecting the current point data and the pre-charged data of the current point; converting the current point data and the pre-charged data to voltage values ​​in the voltage domain; judging whether the difference between the current point voltage and the pre-charged voltage is less than a threshold value, if it is met, directly outputting the compensation value as 0; if it is not met, selecting the two-dimensional compensation table of the corresponding channel according to the channel to which the current point belongs, and performing a two-dimensional table lookup on the current point voltage and the pre-charged voltage to calculate the compensation voltage; converting the compensation voltage to compensation data in the data domain; finally, using the current point data and the compensation data to calculate the output data.

A semiconductor device includes a semiconductor layer having a first conductivity type, a well region within the semiconductor layer having a second conductivity type opposite to the first conductivity type, a source region having the first conductivity type within the well region, and a charge compensation region formed by injection below the well region within the semiconductor layer. The source region is adjacent to a channel region within the well region. A method for forming a semiconductor device includes forming a well region having a second conductivity type within a semiconductor layer having a first conductivity type opposite to the second conductivity type, forming a source region having the first conductivity type within the well region, and injecting ions into the semiconductor layer to form a charge compensation region below the well region within the semiconductor layer. The source region is adjacent to a channel region within the well region.

The invention provides a semiconductor device and a manufacturing method thereof, a drift region is arranged to be a layered structure along the height direction, a deep groove is formed in the drift region, a plurality of epitaxial layers are epitaxially grown layer by layer from the inner wall of the deep groove in the deep groove, and the doping type of each epitaxial layer is opposite to that of the drift region. The sub-drift layers are in first concentration distribution from bottom to top, and the epitaxial layers are in second concentration distribution from the inner wall of the deep trench to the center of the deep trench. Meanwhile, the first concentration distribution and the second concentration distribution have a layer-by-layer matching relationship. By means of the structure, on the transverse cross section of the semiconductor device, the doping concentration between the corresponding sub-drift layer and the epitaxial layer is mutually counteracted in the aspect of integration, so that a quasi-electric neutral region is formed near the side wall of the deep groove, and approximate transverse charge compensation is realized by the charge quantity in a local region. Therefore, the transverse charge balance is realized under the condition that the basic device structure is not changed, so that the compromise relationship between the breakdown voltage and the on-resistance is obviously optimized.

The application provides a preparation method of a specific stoichiometric ratio of O3 type layered sodium ion battery positive electrode material. By finely controlling the ratio of Ni, Fe and Mn, the main redox activity is controlled in a specific electric pair range, the structure stability and the electrochemical performance can be improved, and the phase transition can be effectively inhibited. The performance improvement is attributed to the favorable electronic structure given by the specific component ratio, which promotes the Mn 3+ / Mn 4+ and Fe 2+ / Fe 3+ redox couples to participate in cooperation, thereby expanding the charge compensation window and improving the structure stability. The precursor material is obtained by a simple coprecipitation method, and the obtained material has good consistency and low cost after further high-temperature calcination. The prepared sodium ion battery positive electrode material has excellent performance and is suitable for large-scale production.

The application discloses a method for improving the performance of oxide solid electrolyte by calcium doping, and belongs to the technical field of solid-state batteries. The method comprises the following steps: mixing raw materials containing a calcium source, a sodium source, a rare earth source and a phosphorus source to obtain a precursor; sintering the precursor to obtain a calcium-doped sodium superionic conductor precursor; and performing ion exchange on the precursor and a lithium salt to obtain a calcium-doped oxide solid electrolyte with a chemical formula of Li 3+ x La 1‑x Ca x (PO4)2, and 0 < x <= 0.1. By partially replacing lanthanum ions with calcium ions, lithium vacancies are introduced, the crystal lattice is relaxed, and the lithium ion migration path is optimized by using the charge compensation mechanism, so that the room-temperature ionic conductivity of the material is significantly improved. The method has low raw material cost, simple process and strong universality, can be expanded to various oxide solid electrolyte systems such as NASICON and garnet, and has good application prospect in the field of solid-state lithium ion batteries.

A multi-beam charged particle system and a method of operating a multi-beam charged particle system with reduced impact of charging is provided. Surface charge present on a surface of a sample, which are for example generated during a first image scanning operation, is compensated during a second scanning operation in mirror mode for charge compensation.

The application provides a chromium-titanium bimetallic layered sulfide positive electrode material and a preparation method and application thereof, and belongs to the technical field of lithium ion battery materials. x Ti y S2, and x+y=1, belongs to a hexagonal O1 type structure, and a space group is Pm1. Micro-morphology analysis shows that the material is in a granular form, a particle size distribution is 2-15 mu m, a particle surface is in a layered structure feature, and each element is uniformly distributed on the particle surface and in a bulk phase. The capacity of the material is mainly derived from oxidation and reduction between titanium and sulfur, chromium has a stable structure frame effect, and does not participate in a charge compensation process. Electrochemical analysis shows that the LiCr 2 / 3 Ti 1 / 3 S2 positive electrode material has a reversible capacity of 223 mAh g ‑1 , and is close to a theoretical value of the system positive electrode material. In addition, the material shows excellent rate performance and cycle stability, and still maintains a capacity retention rate of 80% after 330 cycles.