7 results about "Skutterudite" patented technology

The invention discloses a high-performance N-type skutterudite thermoelectric material barrier layer with a composite structure and a preparation method thereof, and belongs to the technical field of thermoelectric conversion. The preparation method comprises the following steps that a Mo target is installed at a radio frequency target position, a W target is installed at a direct current target position, a skutterudite wafer substrate is fixed to a substrate, and the substrate is heated and vacuumized; and the argon flow is set and introduced, bias voltage is started, radio frequency and direct current power supplies are synchronously started to pre-sputter the target material, then radio frequency sputtering of the Mo connecting layer and direct current sputtering of the W barrier layer are sequentially carried out, and the W-Mo composite barrier layer is prepared. The method is used for solving the technical problems that due to the limitation of the high melting point of refractory metal W, a compact tungsten barrier layer is difficult to prepare through a common sintering process, the diffusion capacity of barrier elements is reduced, mismatch of thermal expansion coefficients of the metal W and a skutterudite matrix is large, and the barrier layer is prone to failure in a thermal cycle service environment.

The application relates to a method for connecting a skutterudite thermoelectric material and an electrode by using a surface-textured barrier layer, and relates to the technical field of connection of a skutterudite thermoelectric material and an electrode. The application aims to solve the problem that the existing welding method for the skutterudite thermoelectric material cannot obtain a joint with high mechanical performance and low contact resistance. The method comprises the following steps: etching a plurality of parallel grooves on the surface of the barrier layer to be welded by using a laser, integrating the skutterudite thermoelectric material and the barrier layer subjected to the texturing treatment by means of hot-pressing sintering, and making the surface of the barrier layer subjected to the texturing treatment face the skutterudite thermoelectric material; placing a filler between the skutterudite thermoelectric material and the electrode to be welded to obtain a workpiece A to be welded, and carrying out brazing on the workpiece A to be welded, or directly contacting the skutterudite thermoelectric material and the electrode to be welded to obtain a workpiece B to be welded, and carrying out diffusion welding on the workpiece B to be welded. The application can obtain a method for connecting a skutterudite thermoelectric material and an electrode by using a surface-textured barrier layer.

The invention relates to a filled skutterudite crystal and a preparation method thereof, and belongs to the technical field of skutterudite materials. The chemical formula of the crystal is TexRh4Sb12, wherein x ranges from 0.1 to 1; the crystal is a cubic system, the space group is Im-3 (NO.204), the lattice constant alpha = beta = gamma = 90 degrees, and the theoretical density of the primitive cell volume of the crystal is 8.1-8.5 g / cm < 3 >. The crystal is subjected to semiconductor-insulator conversion along with temperature reduction, has sensitivity and relatively high resistivity at low temperature, is a potential energy material, and has obvious application value in the fields of thermoelectric conversion, temperature sensing and the like.

Provided is a method for manufacturing a thermoelectric conversion element. If upsizing is performed for mass production, the pressure during pressure sintering is likely to be insufficient, and the relative density of the thermoelectric conversion element is likely to be insufficient, due to insufficient load and the like resulting from upsizing of the area of the pressure surface. As a solution, a method for manufacturing a thermoelectric conversion element is characterized by comprising: a step of mixing a powder of a skutterudite-type thermoelectric conversion material containing Sb and a sintering aid containing a compound composed of Mn and Sb to obtain a mixture; and a step of sintering the mixture.

A method for preparing a bimetallic stacked barrier layer with adjustable thermal expansion coefficient and improved stability is disclosed, relating to the field of thermoelectric device technology. The method includes the following steps: Nb and Cu metal foils are stacked alternately to form a multilayer stacked structure, and interfacial bonding is performed via diffusion bonding to obtain an Nb-Cu barrier layer; raw materials are weighed according to the atomic ratios of n-type and p-type cobaltite thermoelectric materials, and the prepared raw materials are vacuum melted to obtain n-type and p-type cobaltite ingots, respectively; the n-type and p-type cobaltite ingots are respectively subjected to melt spinning treatment to obtain corresponding n-type and p-type cobaltite powders; the obtained barrier layer and cobaltite powder are placed together in a mold, with the barrier layer located at the bottom of the mold and the n-type or p-type cobaltite powder placed on top of the barrier layer; after flattening, hot-pressing sintering is performed, followed by furnace cooling to obtain an n-type or p-type cobaltite thermoelectric material with a barrier layer on its surface.

The skutterudite thermoelectric device comprises an electrode layer, a brazing layer, a barrier layer, an adhesion layer and a skutterudite thermoelectric material layer, the electrode layer is made of a molybdenum-copper alloy material, the barrier layer is made of a tungsten material, the molybdenum-copper electrode layer and the tungsten barrier layer are in brazed connection, and the adhesion layer is made of an adhesion layer. The tungsten barrier layer and the skutterudite thermoelectric material layer are connected through an adhesion layer. According to the design scheme of the interface structure of the high-stability thermoelectric device provided by the invention, the problem of device failure caused by disconnection of the copper electrode in the service period is solved, and the performance and efficiency of the skutterudite thermoelectric device are greatly improved.

A method for improving the strength and long-term service performance of brazed joints in skutterudite thermoelectric devices using a cobalt-based barrier layer belongs to the technical field of thermoelectric material connection. In order to solve the problems of poor long-term service performance and low strength of brazed joints of the existing skutterudite and electrode, a cobalt-based barrier layer is added between the skutterudite and the electrode, which is cobalt and refractory metal. The refractory metal has high melting point, large bond energy and high diffusion activation energy, thereby inhibiting the diffusion of Sb element through the barrier layer to the electrode. Therefore, the composition of the cobalt-based barrier layer can be flexibly adjusted so that the thermal expansion coefficient of the barrier layer is easily matched with that of the skutterudite. Moreover, the barrier layer powder and the skutterudite powder are integrated by hot-pressing sintering, and a staggered interface is formed between the powder and the powder, which can well relieve the interface stress. The barrier layer of the present application can better inhibit the diffusion of Sb element because it contains fewer grain boundaries. The shear strength of the brazed joint of the skutterudite and the electrode obtained by the present application reaches 33.6 MPa.