25 results about "Sb element" patented technology

The invention provides a magnesium alloy, a magnesium alloy shell and electronic equipment. The magnesium alloy comprises the following components in percentage by weight: 2.5%-4.5% of aluminum, 0.5%-1.0% of zinc, 0.2%-0.8% of manganese, 0.01%-1.0% of titanium, 0.01%-0.5% of antimony and the balance of magnesium, additive elements and inevitable impurities, the additive element is a lanthanum-cerium mixed element, and the total weight percentage of the lanthanum element and the cerium element is 0.5%-1.5%. The magnesium alloy can be applied to a magnesium alloy shell, a small amount of low-price mixed rare earth (La / Ce) is added into an alloy of an Mg-Al-Zn system with the low Al content, the refining effect of trace Ti and Sb elements is matched, the corrosion resistance of the magnesium alloy can be greatly improved, meanwhile, the use amount of the rare earth element and the aluminum element is reduced, the manufacturing cost is reduced, and the service life of the magnesium alloy is prolonged. The method is suitable for mass production of electronic products.

The invention discloses a lithium dendrite gradient shell neutralizer for a solid-state battery and a preparation method thereof, the lithium dendrite gradient shell neutralizer comprises a BiSbTe3 porous inner core, a BiSbTe3 porous outer core, a BiSbTe3 porous inner core, a BiSbTe3 porous outer core, a BiSbTe3 porous inner core, a BiSbTe3 porous outer core, a BiSbTe3 porous outer core, a BiSbTe3 porous outer core, a BiSbTe3 porous inner core, a BiSbTe3 porous outer core, a The Li2Bi pre-activation layer is a 1-3nm continuous coating layer formed by atomic layer deposition; the inner layer of the gradient shell layer is an ion conductor layer with the chemical formula of Li < 3.25 > Ge < 0.25 > P < 0.75 > S < 4 >, and the thickness of the inner layer is 8-12 nm; the middle layer is a composite reinforcement layer of Li3PS4 and 5-15wt% of LiF, and the thickness of the middle layer is 2-5nm; the outer layer is a Li4SnS4 hypersensitive response layer, and the thickness of the outer layer is 1-3 nm; and the neutralizer is guided and enriched to the tip of the lithium dendrite through an electric field, and triggers gradient shell fracture under local high pressure, so that in-situ passivation of the subsecond dendrite is realized. According to the invention, through the gradient shell structure of the hypersensitive outer layer, the enhanced middle layer and the ion conduction inner layer, the fracture threshold and the mechanical strength are balanced; the microwave synthesis is combined with the solid-phase mechanical fusion process, the preparation efficiency is improved by 5 times compared with a traditional ALD technology, and nanoscale precise positioning is achieved through a neutralizer enrichment system based on electric field guidance.

The invention discloses a heat-treatment-free high-toughness die-casting aluminum alloy and a preparation method thereof. The heat-treatment-free high-toughness die-casting aluminum alloy comprises the following components in percentage by mass: 6.5-9.5% of Si, 0.1-0.3% of Fe, 0.4-0.85% of Mn, 0.1-0.6% of Mg, 0.1-0.9% of Cu, 0.02-0.12% of Ti, 0.05-0.15% of Sb and the balance of Al and other inevitable impurity elements. Meanwhile, Fe + Mn is greater than or equal to 0.65%, and Mn / Fe is equal to 2.0-6.6. According to the heat-treatment-free die-casting alloy and the preparation method thereof, the problem that the elongation is unstable due to melt air suction caused by deterioration of the Sb element of the heat-treatment-free die-casting alloy is solved, an alloy die-casting piece can obtain a structure without obvious hole loosening defects at all positions inside, and therefore it is guaranteed that the elongation at all positions of a part is larger than 10% while the as-cast tensile strength is larger than 230 MPa and the yield strength is larger than 150 MPa.

The invention discloses a dysprosium-based half-Heusler polycrystalline material and a preparation method and application thereof, the chemical formula of the polycrystalline material is Dy < 1-x > Y < x > Pt < 1-y > Ni < y > Sb, x and y represent atomic percent, x is more than or equal to 0 and less than 1.0, and y is more than or equal to 0 and less than or equal to 0.4; the preparation method comprises the following steps: weighing metal raw materials according to the stoichiometric ratio of the raw material composition Dy < 1-x > Y < x > Pt < 1-y > Ni < y > Sb, mixing Pt, Ni and Sb, and smelting to obtain a precursor Pt < 1-y > Ni < y > Sb; and carrying out secondary smelting on Dy and Y metal raw materials and the precursor Pt1-yNiySb to obtain a smelted cast ingot, and carrying out crushing, ball milling and sintering to obtain the polycrystalline material. The material is composed of dysprosium and yttrium as main rare earth elements matched with Pt and Sb elements, the peak thermoelectric figure of merit and the average thermoelectric figure of merit are remarkably improved through regulation and control of the component content and the double-layer synergistic effect of the preparation method, and the highest thermoelectric figure of merit can reach 1.33.

The invention discloses a novel thermoelectric material based on N-type BiSbSe3 polycrystal and a preparation method thereof, and belongs to the technical field of thermoelectric material preparation, the thermoelectric material is S solid solution and halogen doped N-type BiSbSe3 polycrystal, the chemical general formula of the thermoelectric material is BiSbSe3-x-y SxMy, M is one of Br, Cl and I, the molar ratio of Bi to Sb to Se to S to M is 1: 1: 3-x-y: x: y, x is greater than or equal to 0.12 and less than or equal to 0.48, and y is greater than or equal to 0 and less than or equal to 0.06. The preparation method comprises the following steps: (1) weighing required raw materials including a Bi elementary substance, a Sb elementary substance, a Se elementary substance, Bi2S3 and a halogen introducing substance, ensuring that the molar ratio of Bi to Sb to Se to S to M is 1: 1: (3-x-y): x: y, M is Br or Cl or I, x is more than or equal to 0.12 and less than or equal to 0.48, y is more than or equal to 0 and less than or equal to 0.06, and mixing the raw materials after weighing; and (2) carrying out high-temperature melting synthesis reaction on the mixed raw materials, and cooling along with a furnace after the reaction is finished, so as to finally obtain the N-type BiSbSe3 polycrystal. The problems that in the prior art, when BiSbSe3 is prepared, a quenching technology is needed for assistance, energy consumption is large, time is long, and part of media are low in safety and not environmentally friendly are solved.

The invention relates to the technical field of zinc-nickel batteries, and discloses a multiphase high-entropy alloy additive for a zinc-nickel battery and a preparation method of the multiphase high-entropy alloy additive, and the multiphase high-entropy alloy additive is composed of Zn, Ni, Al, Sn, In and Sb elements according to a preset atomic ratio. The preparation method comprises the following steps: preparing a mother alloy cast ingot from metal raw materials in a vacuum induction melting furnace through a staged temperature control melting and multiple remelting process; and crushing the cast ingot, and carrying out high-energy ball milling under the protection of an inert atmosphere to prepare the additive powder. The additive is applied to the negative electrode of the zinc-nickel battery. The additive effectively inhibits dendritic crystal growth and hydrogen evolution side reaction of a zinc negative electrode by using a high-entropy structure, a multiphase synergistic effect and a corrosion resistance characteristic, and solves the technical problems of poor high-rate performance and short floating charge life of a zinc-nickel battery. According to the zinc-nickel battery prepared by adopting the additive, the high-rate cycle life and the high-temperature floating charge equivalent life of the zinc-nickel battery are both prolonged, and the comprehensive electrochemical performance is excellent.

The invention discloses a high-strength corrosion-resistant Sb-containing aluminum alloy and a plate preparation method thereof, and belongs to the technical field of aluminum alloy material performance research. The method comprises the following steps: smelting and alloying: smelting high-purity Al as a matrix to 700-750 DEG C, and sequentially adding Zn, Mg and Cu; keeping the temperature, and adding 0.3 wt% of Sc and 0.2 wt% of Zr into the melt; 0.1 wt%-0.5 wt% of Sb element is added for microalloying, and uniform stirring is carried out; casting the melt into a cast ingot, and cooling to room temperature; carrying out homogenizing annealing on the cast ingot; and carrying out hot rolling or room-temperature cold rolling processing to obtain the required thickness and plate shape. According to the invention, Sb microalloying is innovatively combined with Sc and Zr modification to form a synergistic effect of grain refinement, precipitation optimization and corrosion resistance improvement. And clear guidance of the optimal Sb addition amount (0.4 wt.%) is provided, and the problem that system research and optimization are lacked in the prior art is solved.

The invention discloses various low-cost zinc antimonate-based conductive powder and a preparation method thereof, Zn and Sb elements rich in earth crust are used as raw materials, the forbidden band width, the carrier concentration and the mobility of the raw materials are regulated and controlled through doping modification, the high-purity conductive powder is prepared by combining a co-precipitation method and a low-temperature sintering process, and the chemical formula of the high-purity conductive powder is Zn0. 92In0. 08Sb2O6, Zn0. 92Ge0. 08Sb2O6, Zn0. 92Al0. 08Sb2O6 or Zn0. 92Sn0. 08Sb2O6. The method has the advantages of simple equipment, low cost, easiness in control of doping concentration and the like.

The present invention belongs to the technical field of melting of cast steel parts, and particularly relates to a melting method for controlling antimony elements during the refining process of heat-resistant cast steel parts; mainly by adding slag materials such as active lime, aluminum ingots, aluminum-calcium, and lime during the second refining process to improve the reducibility and alkalinity of the molten steel, making it have strong reducibility and strong alkalinity; and by taking measures such as controlling the argon flow rate and increasing the smelting time during the smelting process to reduce the Sb element content from 0.003% to 0.0008%, meeting the requirements of technical specifications.

The present invention relates to the technical field of semiconductor material preparation, and specifically to a dual-zone synthesis device and method for InGaSb ternary alloy polycrystals, comprising a synthesis chamber, a multi-section heater, a dual-zone synthesis tube, a synthesis chamber rotation mechanism, and a synthesis chamber base. The present invention uses a dual-zone structure synthesis tube to synthesize InGaSb polycrystals, first synthesizing GaSb and InSb in different temperature zones, and then fusing GaSb and InSb to synthesize InGaSb. Compared with directly synthesizing using In, Ga, and Sb elements, this method can effectively control the element ratio in InGaSb by controlling the ratio of GaSb and InSb. At the same time, it can effectively avoid the segregation of In in InGaSb during direct synthesis using In, Ga, and Sb elements, thereby improving the uniformity of the components and ensuring the consistency of the material.

The invention discloses a method for improving the high-temperature strength of an A357 alloy through manganese-antimony combined microalloying, which comprises the following steps: (1) adding Mn and Sb in the smelting process of an A357 alloy raw material, and pouring into a casting mold to form a casting or a cast ingot; and (2) the casting / cast ingot obtained in the step (1) is subjected to solution treatment and aging treatment, a large number of nanoscale Al15Mn3Si2 heat-resistant phases are separated out in a matrix, and more beta ''and beta 'strengthening phases are promoted to be separated out by adding the Sb element, so that the high-temperature strength of the alloy is improved. According to the invention, the high-temperature strength of the A357 alloy at 200 DEG C and 250 DEG C can be obviously improved, and the preparation process is simple and does not cause pollution to the environment.

The application belongs to the technical field of thermoelectric materials, and particularly relates to a half-Heusler structure thermoelectric material and a preparation method and application thereof. The thermoelectric material is an N-type thermoelectric material formed by substituting Ru in NbRuSb with Ni element, and has a chemical formula of NbRu 1‑x Ni x Sb, wherein x is in a range of 0 < x <= 0.1; the half-Heusler structure thermoelectric material is prepared by using Nb element, Ru element, Ni element and Sb element as raw materials and by adopting high-energy ball milling, spark plasma sintering and annealing methods; and the material can be applied to thermoelectric device manufacturing. Compared with the prior art, the thermoelectric material prepared by the application optimizes the thermoelectric performance of the half-Heusler structure thermoelectric material, wherein NbRu 0.9 Ni 0.1 Sb has the highest thermoelectric performance, the power factor is as high as 34.8 muW·cm ‑1 ·K ‑2 at 682K, and zT is 0.404 at 982K.

The present invention discloses an Al-Si alloy filler metal for brazing 5000 series aluminum alloys and a preparation method thereof. During the process of using the Al-Si alloy filler metal for brazing 5000 series aluminum alloys, the Mg element in the base metal diffuses into the filler metal and reacts with Si in the filler metal to form the Mg<subgt;2< / subgt;Si phase, and its morphology and distribution affect the performance of the brazed joint. The combined addition of Be and Sb can improve the morphology of Mg<subgt;2< / subgt;Si. The Sb element and the Mg element diffused into the reaction zone combine to form Mg<subgt;3< / subgt;Sb<subgt;2< / subgt> particles, providing nucleation sites for the crystallization of the Mg2Si phase and reducing the size of the Mg<subgt;2< / subgt>Si phase. After adding the Be element, Be tends to adsorb on the {100} crystal plane of the Mg<subgt;2< / subgt>Si phase and combines with Mg atoms, inhibiting the growth of the Mg<subgt;2< / subgt>Si phase along the <100> crystal direction, making Mg

The application belongs to the technical field of brazing, and particularly relates to a medium-temperature lead-containing filler metal and a preparation method and application thereof. The medium-temperature lead-containing filler metal comprises Ag, Sn, Sb and Pb elements and essential impurity elements, wherein the mass percentage of the Ag element is 0.5-2%, the mass percentage of the Sn element is 5-15%, and the mass percentage of the Sb element is 5-15%. Metal raw materials containing the elements are mixed and melted to obtain the medium-temperature lead-containing filler metal. The filler metal is used in a welding product in the field of electronic packaging. The welding interface of the welding product has reliable connection strength, and the interface is continuous and has good consistency. In addition, the welding product has strong applicability to external environment.

The invention discloses a bismuth telluride-based thermoelectric material preparation method, which comprises the steps of S1, weighing high-purity Bi, Te and Sb elementary substance powder as raw materials according to a P-type bismuth telluride thermoelectric material chemical formula (Bi1-ySby) 2Te3; s2, pouring the uniformly mixed materials into a quartz crucible, placing the quartz crucible in a closed atmosphere furnace, introducing protective gas into the furnace, and inserting a fixed stirring paddle; raising the temperature of the atmosphere furnace constantly, lowering a stirring paddle for forced stirring after reaching a set temperature, raising the stirring paddle after constant-temperature intensified smelting for a period of time, and taking out a product after cooling the product to room temperature along with the furnace; and S3, uniformly refining the product obtained in the step S2 into powder, filling the powder into a mold, compacting and sintering to obtain the high-performance bismuth telluride-based thermoelectric material. The bismuth telluride-based thermoelectric material prepared through the method is more uniform in alloy component, smaller in grain size and more excellent in thermoelectric performance, and compared with a traditional zone melting method and a smelting-annealing method, the method is easy to operate, simple and convenient in process and suitable for large-scale commercial production.

The invention discloses an In and Sb synergistically strengthened Sn < 260-2x > Ag < 10 > Cu < 2 > In < x > Sb < x > lead-free solder alloy which comprises the following components in percentage by mass: 3.4% of Ag, 0.4% of Cu, 1.4-5.7% of In, 1.5-6.1% of Sb and the balance of Sn, and the atomic ratio of In to Sb is 1: 1. According to the lead-free solder alloy and the preparation method thereof, the Sn-Ag-Cu series solder alloy is optimally designed, and meanwhile, the In element and the Sb element are added, so that the Sn 260-2x Ag10Cu2InxSbx lead-free solder alloy synergistically strengthened by In and Sb is obtained, and the lead-free solder alloy has excellent shear strength and plasticity. The lead-free solder alloy disclosed by the invention can be brazed by adopting a current mainstream reflow process of Sn-3. 0Ag-0. 5Cu lead-free solder alloy, has the advantages of high welding strength, good shearing performance before and after aging, moderate cost, no lead, more environmental friendliness and the like, and is particularly suitable for BGA (Ball Grid Array) and WLCSP (Wafer Level Chip Scale Package).

The invention discloses a europium-doped bismuthate radiation-resistant optical glass material and a preparation method thereof, 50 to 56 parts of H3BO3, 0.9 to 1.8 parts of La2O3, 1.1 to 2.8 parts of Na2CO3, 4.8 to 5.5 parts of K2CO3, 30 to 45 parts of Bi2O3, 0.5 to 3.8 parts of Eu2O3 and 1.2 to 4.5 parts of Sb2O3 are mixed and then are subjected to high-temperature melting, and obtained high-temperature glass liquid is subjected to molding and annealing treatment to obtain the europium-doped bismuthate radiation-resistant optical glass material. According to the radiation-resistant glass prepared by the invention, the novel variable valence element Eu is added, so that the formation of a color center in a microstructure after high-dose gamma radiation can be effectively inhibited. Meanwhile, the novel variable valence element Eu can practically solve the problems that the radiation-resistant glass is discolored and the initial transmittance is reduced due to the traditional variable valence element Ce. On the basis of the gamma absorption coefficient of the element, the Bi oxide in the radiation-resistant glass is used as one of network forming bodies, so that the problem of toxicity of the Pb element is avoided while the radiation resistance is ensured. The Sb element oxide is added, so that the problems that the Bi element causes glass discoloration and the initial transmittance of the glass is reduced are effectively solved.

The present invention discloses a Sn synergistically strengthened by In and Sb 260‑2x Ag 10 Cu2In x Sb x The lead-free solder alloy comprises the following components by mass percentage: 3.4% Ag, 0.4% Cu, 1.4-5.7% In, 1.5-6.1% Sb, and the balance Sn, wherein the atomic ratio of In to Sb is 1:1. The present invention optimizes the design of the Sn-Ag-Cu solder alloy and simultaneously adds In and Sb elements to obtain a Sn-Ag-Cu solder alloy synergistically strengthened by In and Sb. 260‑2x Ag 10 Cu2In x Sb x The lead-free solder alloy has excellent shear strength and plasticity. It can be soldered using the reflow process of the currently mainstream Sn-3.0Ag-0.5Cu lead-free solder alloy. It has the advantages of high soldering strength, good shear performance before and after aging, moderate cost, and environmental friendliness due to its lead-free nature. It is particularly suitable for BGA and WLCSP packaging.

The application discloses anode-oxidizable super-high-strength aluminum alloy and a preparation method thereof. Al 83.85~90.46wt%, Mg 6.0~9.5wt%, Zn 3.51~5.0wt%, Si 0.025~0.45wt%, and at least one of Mn, Cu, Ti, Be, Sb elements with a total content of not more than 0.70wt%, wherein the content of Mg, Zn and Si satisfies the relationship formula: -3.3≤[(2.31×Si)+(1.76×Zn)-Mg]×100≤3.6, and the grain length-diameter ratio is ≤3. The preparation method of the aluminum alloy deformed material comprises the following steps: (1) manufacturing an aluminum alloy ingot; (2) homogenizing heat treatment; (3) processing into a processing material; (4) solid solution heat treatment on the processing material; (5) cooling to room temperature; and (6) aging treatment. The aluminum alloy has low density, high strength and excellent surface treatment adaptability.

The application belongs to the field of laser selective melting rapid forming, and discloses a magnesium alloy powder containing Sb element for laser selective melting and application of the magnesium alloy powder, the magnesium alloy powder for laser selective melting is composed of the following components with mass percentage: Al element: 8.5-9.5%, Zn element: 0.5-0.9%, Mn element: 0.2-0.4%, Sb element: 0.1-0.5%, impurities: ≤0.1%, and the rest is Mg element. The application improves the specific composition of the magnesium alloy powder for laser selective melting, introduces Sb element into the magnesium alloy, cooperates with the SLM process, and correspondingly obtains the SLM magnesium alloy forming piece, which has the characteristics of high yield strength and prolonged creep life, effectively improves the strength of the magnesium alloy forming piece, and deepens the application of the magnesium alloy in the SLM process.

The present application relates to a solar cell comprising: a silicon substrate containing an Sb element; an aluminum oxide layer formed on the silicon substrate; wherein the aluminum oxide layer contains antimony. The present application also relates to a photovoltaic module comprising the solar cell.

The invention relates to the technical field of semiconductor material preparation, in particular to an InGaSb ternary alloy polycrystal double-zone synthesis device and method.The InGaSb ternary alloy polycrystal double-zone synthesis device comprises a synthesis cavity, a multi-section heater, a double-zone synthesis pipe, a synthesis cavity rotating mechanism and a synthesis cavity base; according to the invention, InGaSb polycrystal synthesis is carried out by adopting a double-region structure synthesis tube, firstly GaSb and InSb are synthesized in different temperature regions respectively, and then GaSb and InSb are fused to synthesize InGaSb. Compared with a method for synthesizing by directly adopting In, Ga and Sb elements, the method disclosed by the invention has the advantage that the element ratio in InGaSb can be effectively controlled by controlling the ratio of GaSb to InSb. And meanwhile, segregation of In in InGaSb in direct synthesis of In, Ga and Sb elements can be effectively avoided, and the uniformity of components is improved, so that the consistency of the material is ensured.

A method for improving the strength and long-term service performance of brazed joints in skutterudite thermoelectric devices using a cobalt-based barrier layer belongs to the technical field of thermoelectric material connection. In order to solve the problems of poor long-term service performance and low strength of brazed joints of the existing skutterudite and electrode, a cobalt-based barrier layer is added between the skutterudite and the electrode, which is cobalt and refractory metal. The refractory metal has high melting point, large bond energy and high diffusion activation energy, thereby inhibiting the diffusion of Sb element through the barrier layer to the electrode. Therefore, the composition of the cobalt-based barrier layer can be flexibly adjusted so that the thermal expansion coefficient of the barrier layer is easily matched with that of the skutterudite. Moreover, the barrier layer powder and the skutterudite powder are integrated by hot-pressing sintering, and a staggered interface is formed between the powder and the powder, which can well relieve the interface stress. The barrier layer of the present application can better inhibit the diffusion of Sb element because it contains fewer grain boundaries. The shear strength of the brazed joint of the skutterudite and the electrode obtained by the present application reaches 33.6 MPa.

The application belongs to the technical field of battery materials, and discloses a kind of secondary ball positive active material, the primary particle of the secondary ball positive active material is doped with Sb and S.By the common doping of S and Sb element, the primary particle of the secondary ball is reduced, the uniformity of the primary particle is improved, which is beneficial to reduce the migration resistance, improve the cycle performance and the first coulomb efficiency of the material.The preparation method of the secondary ball positive active material is also disclosed, the S-containing compound and the Sb-containing compound are added simultaneously in the primary mixing process, which can effectively control the size of the primary particle, and the simultaneous addition of the two elements can make the primary particle smaller and more close to the spherical particle, and the uniformity of the primary particle is also very good.The primary particle can be made smaller and the particle is more inclined to spherical morphology, which is beneficial to reduce the lithium intercalation dynamics characteristics of the material in the charging and discharging process, and thus improve the first coulomb efficiency of the material.

The invention discloses a production method of a low-temperature-resistant reinforcing steel bar for a frozen soil environment, and belongs to the technical field of low-temperature high-strength reinforcing steel bar manufacturing. According to the method, deep purification and grain refinement of molten steel are achieved by optimizing the design of a low-carbon Cu-Ni-Cr-Sb-rare earth composite alloy system and combining a converter-LF-VD smelting purification process, a full-protection continuous casting process and a precise controlled rolling and controlled cooling process; a three-section accelerated cooling process and surface diffusion tempering treatment are adopted, so that Cu, Ni and Sb elements form an enrichment layer on the surface layer of the steel bar; and then a Cu2O-Cr2O3-Sb2O5-rare earth oxide composite film layer is formed through rare earth composite passivation treatment, so that the corrosion resistance and low-temperature toughness of the reinforcing steel bar are remarkably improved. The method is stable in process, low in cost and high in adaptability, the obtained reinforcing steel bar still keeps excellent strength and impact toughness in the environment of 60 DEG C, and the method is suitable for production of reinforcing steel bars for bridges, railways, tunnels and ocean structures in frozen soil regions.