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P-type Cu2.856In4Te8 base medium-high temperature thermoelectric material containing Sb and manufacturing technology thereof

A cu2.856in4te8, cu2.856sb0.6in4te8 technology, applied in the field of new materials, can solve the problems of insufficient performance of ternary semiconductors, low operating temperature, poor thermoelectric performance, etc., and achieve low cost, reliable operation and long life. Effect

Active Publication Date: 2018-08-31
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the problem of insufficient performance of wide bandgap Cu-In-Te ternary semiconductor, the present invention aims to provide a kind of P-type Cu containing Sb with higher performance to the art. 2.856 In 4 Te 8 Based on high-temperature thermoelectric materials and their preparation process, it can solve the technical problems of poor thermoelectric performance and low service temperature of existing similar materials

Method used

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  • P-type Cu2.856In4Te8 base medium-high temperature thermoelectric material containing Sb and manufacturing technology thereof
  • P-type Cu2.856In4Te8 base medium-high temperature thermoelectric material containing Sb and manufacturing technology thereof

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Effect test

Embodiment 1

[0013] According to the chemical formula Cu 2.856 In 4 Te 8 The three-element particles of Cu, In and Te with a purity greater than 99.999wt.% are weighed and directly placed in a quartz tube for vacuum packaging. Then melt and synthesize at 850°C for 24 hours, then cool down to 390°C and anneal for 72 hours after melting and synthesis, crush and ball mill the annealed ingot. The ball milling time is controlled at 5 hours. Sintering, sintering time 8 minutes, sintering temperature 650 ° C, sintering pressure 55MPa, prepared Cu 2.856 In 4 Te 8 thermoelectric materials.

Embodiment 2

[0015] According to the chemical formula Cu 2.856 Sb 0.25 In 4 Te 8 Cu, Sb, In, and Te four-element particles with a purity greater than 99.999wt.% are weighed and directly placed in a quartz tube for vacuum packaging. Then melt and synthesize at 850°C for 24 hours, then cool down to 390°C and anneal for 72 hours after melting and synthesis, crush and ball mill the annealed ingot. The ball milling time is controlled at 5 hours. Sintering, sintering time 8 minutes, sintering temperature 650 ° C, sintering pressure 55MPa, prepared Cu 2.856 Sb 0.25 In 4 Te 8 thermoelectric materials.

Embodiment 3

[0017] According to the chemical formula Cu 2.856 Sb 0.5 In 4 Te 8 Cu, Sb, In, and Te four-element particles with a purity greater than 99.999wt.% are weighed and directly placed in a quartz tube for vacuum packaging. Then melt and synthesize at 850°C for 24 hours, then cool down to 390°C and anneal for 72 hours after melting and synthesis, crush and ball mill the annealed ingot. The ball milling time is controlled at 5 hours. Sintering, sintering time 8 minutes, sintering temperature 650 ° C, sintering pressure 55MPa, prepared Cu 2.856 Sb 0.5 In 4 Te 8 thermoelectric materials.

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Abstract

The invention relates to P-type Cu2.856In4Te8 base medium-high temperature thermoelectric material containing Sb and manufacturing technology thereof. A design main point is characterized by directlyadding a Sb element with a molar fraction of 0.0388 to a Cu2.856In4Te8 alloy to form a Cu2.856In4Te8 base thermoelectric material containing Sb, wherein a chemical formula is Cu2.856Sb0.6In4Te8. The manufacturing technology comprises the following steps of weighing the corresponding amount of four elements of Cu, In, Sb, Te according to the chemical formula, and carrying out vacuum smelting at 800to 900 DEG C for 24 hours; after the melting is ended, cooling to 390 DEG C and annealing for 72 hours, smashing annealed ingot casting and carrying out ball milling, sintering and forming a powder after ball milling by discharge plasma sparks in a short time, and manufacturing and acquiring a Cu2.856Sb0.6In4Te8 thermoelectric material, wherein sintering time is 5 to 10 minutes, a sintering temperature is 600-700 DEG C and sintering pressure is 50-60MPa. The thermoelectric material is not polluted and there is no noise. The material can be used for manufacturing a medium-high temperature power generation component and has advantages that operation is reliable, a service life is long and the manufacturing technology is simple.

Description

technical field [0001] The invention relates to the field of new materials, and is suitable for the key component material of medium and high temperature power generation for direct conversion of heat energy and electric energy, and is a P-type Cu containing Sb 2.856 In 4 Te 8 Base medium high temperature thermoelectric materials and their preparation process. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, the potential application range: household refrigerators, freezers, superconducting electronic device cooling and waste heat power generation, waste heat utilizati...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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