56results about "Thermoelectric device junction materials" patented technology

The present invention provides apparatuses comprising a plurality of junctions providing a Seebeck effect, configured as alternating hot and cold junctions. The apparatus can be configured such that the cold junctions exhibit a different thermal behavior than the hot junctions in response to incident radiation. The junctions can be connected in series, such that the sum of the Seebeck effect from the plurality of junctions provides a sensitive, inherently calibrated indication of heating of the apparatus responsive to incident radiation, and therefore of the radiation itself.

To provide a thermoelectric conversion material having a high dimensionless thermoelectric figure of merit over a wide temperature range, and a thermoelectric power generation module and a Peltier cooling module using the thermoelectric conversion material.SOLUTION: A thermoelectric conversion material according to the present invention includes a base material containing PbTe, and at least one element selected from the group consisting of elements whose ionic radius with a valence of +1 is smaller than the ionic radius of Pb with a valence of +2, which is contained in the base material, and the element whose ionic radius with a valence of +1 is smaller than the ionic radius of Pb with a valence of +2 is contained in the base material as an ion with a valence of +1, and the content is more than 0at% and less than 10.0at%.SELECTED DRAWING: Figure 8

To provide a thermoelectric conversion material capable of improving the efficiency of thermoelectric conversion.SOLUTION: A thermoelectric conversion material includes a base material composed of SiGe, a first additive element functioning as a dopant, a second additive element different from the first additive element, and oxygen. The second additive element includes at least one of Mg, Ca, and Ti. A content ratio of the second additive element relative to the base material is 0.5 at% or more and 5 at% or less. In a field of view selected such that a grain boundary crosses opposite sides of the field of view to each other that is the field of view of a cross-section of the base material, distributions of the second additive element and oxygen have a positive correlation. A correlation coefficient of the correlation is in a range of 0.2 or more and less than 1.0.SELECTED DRAWING: Figure 7

To provide a thermoelectric conversion element having a thermoelectric element layer excellent in shape controllability and capable of being highly integrated, and a method of manufacturing the thermoelectric conversion element.SOLUTION: The thermoelectric conversion element is provided that includes: a substrate having an electrode; a pattern layer having a plurality of spaced openings; and P-type thermoelectric element layers and N-type thermoelectric element layers, each present in the spaced openings, wherein the pattern layer includes a resin, each of the P-type thermoelectric element layers and the N-type thermoelectric element layers is made of a thermoelectric semiconductor composition including a thermoelectric semiconductor material. The method of manufacturing the thermoelectric conversion element is also provided.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion module in which residual voids in a solder material layer are suppressed and bonding of a thermoelectric conversion material chip to an electrode is improved.SOLUTION: A thermoelectric conversion module in which the chips of a P-type thermoelectric conversion material and the chips of an N-type thermoelectric conversion material, which are alternately spaced apart, are joined to electrodes via a solder material includes wall structures spaced apart from each other and arranged outside the entire perimeter of the regions on the electrode that are joined to the chips of the P-type thermoelectric conversion material and the chips of the N-type thermoelectric conversion material, and a distance between at least one wall surface among the inner wall surfaces of the wall structure and each side surface of the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material facing and closest to the wall surface is 1 μm or more.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion element which can be produced from a material having high biological safety, and which enables the materialization of a flexible and slim thermoelectric conversion module, and provide a method for producing a thermoelectric conversion element having a self-standing property without needing a complicated process.SOLUTION: A thermoelectric conversion element is arranged by laminating a first conductive substrate 1, a thermoelectric conversion oxide layer 2 provided on an upside of the first conductive substrate, and a second conductive substrate 3 on an upside of the thermoelectric conversion oxide layer in this order. In the thermoelectric conversion element, the second conductive substrate is formed so as to have an outer periphery located on or inside an outer periphery of the thermoelectric conversion oxide layer. As to respective areas of the layers, the relation given by the following expressions holds: [Area of the first conductive substrate ]≥[Area of the thermoelectric conversion oxide layer]≥[Area of the second conductive substrate], and [Area of the first conductive substrate]>[Area of the second conductive substrate]. For respective thicknesses of the layers, the relation given by the following equation holds: [Thickness of the thermoelectric conversion oxide layer]:([Thickness of the first conductive substrate]+[Thickness of the second conductive substrate])=1:1 to 1:10.SELECTED DRAWING: Figure 1

To provide a manufacturing method of a thermoelectric conversion module capable of an integral multi-bevelling in a thin film without a substrate base material or a solder layer.SOLUTION: A manufacturing method of a thermoelectric conversion module contains steps of (A) to (D): (A) a step of arranging chips of P-type and N-type thermoelectric conversion materials and forming a thermoelectric conversion material layer; (B) a step of forming an insulation layer L1 having P-type and N-type contact holes; (C) a step of forming an insulation layer L2 having P-type and N-type contact holes; and (D) a step of arranging electrode pieces M1 for connecting a pair of P-type and N-type adjacent contact holes onto the insulation layer L1 in a chip arrangement direction with an interval so that the adjacent electrode pieces M1 are not contacted to each other, arranging electrode pieces M2 for connecting a pair of N-type and P-type adjacent contact holes onto the insulation layer L2 in the chip arrangement direction with an interval so that the adjacent electrode pieces M2 are not contacted to each other, and thereby electrically connecting each electrode piece M1, the P-type thermoelectric conversion material, each electrode piece M2, and the N-type thermoelectric conversion material in this order.SELECTED DRAWING: Figure 2

The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining the brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: the linear speed of rollers is 0.01 mm / s to 10 mm / s, preferably 0.1 mm / s to 5 mm / s, and the amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; the temperature of the annealing being 100°C to 800°C, preferably 300°C to 500°C, and the duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.

A thermoelectric element according to one embodiment of the present invention includes a first substrate, a first buffer layer disposed on the first substrate, a first electrode disposed on the first buffer layer, P-type thermoelectric legs and N-type thermoelectric legs disposed on the first electrode, second electrodes disposed on the P-type thermoelectric legs and N-type thermoelectric legs, a second buffer layer disposed on the second electrode, and a second substrate disposed on the second buffer layer, wherein at least one of the first buffer layer and the second buffer layer contains a silicone resin and an inorganic material, and at least one of the first buffer layer and the second buffer layer has a Young's modulus of 1 to 65 MPa.

To provide a phosphorus-based p-type thermoelectric conversion material and a thermoelectric conversion element using the same having less environmental load and having better thermoelectric characteristics than before.SOLUTION: In a thermoelectric conversion material consisting of a phosphorus-based compound represented by a chemical formula of Ag6-xAxGe10-yByP12, in the above chemical formula, the A site is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Cu, and Au, and the B site is at least one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Al, Ga, In, Tl, Sb, and Bi.SELECTED DRAWING: Figure 1

To obtain fine and homogeneous intermetallic compound powder in pulverization by a medium stirring type pulverizer.SOLUTION: A method for producing intermetallic compound powder includes a step of adding nanoceramic powder to metal raw material powder containing a plurality of metal elements to pulverize it using a medium stirring type pulverizer.SELECTED DRAWING: Figure 1

To provide an infrared sensor that can attain a high optical absorption efficiency and a high thermoelectric conversion efficiency.SOLUTION: The infrared sensor includes: a first graphene layer for absorbing infrared rays by using plasmon resonance; a second graphene layer having a connection unit connected to the first graphene layer; a first electrode and a second electrode connected to the second graphene layer, with the connection unit in between; and a control electrode for controlling the distribution of Fermi energy of the second graphene layer between the first and second electrodes, asymmetrically.SELECTED DRAWING: Figure 1

To provide a liquid thermoelectric conversion element in which a small heat flow causes a large temperature difference between a positive electrode and a negative electrode to obtain high electromotive force, and a method for controlling the electrochemical Seebeck coefficient of the liquid thermoelectric conversion element.SOLUTION: A liquid thermoelectric conversion element 10 includes a first electrode 21, a second electrode 22, and an electrolytic solution 30 interposed between the first electrode 21 and the second electrode 22, and the electrolytic solution 30 contains an organic solvent, and oxide ions, and reduction ions.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion film having excellent thermoelectric conversion properties and excellent mechanical properties, and a manufacturing method thereof.SOLUTION: A thermoelectric conversion film includes a complex containing a poly(3,4-ethylenedioxythiophene) cation, and a polystyrene sulfonate anion and a tetracyanoborate anion, a peak area derived from the poly(3,4-ethylenedioxythiophene) cation is A(PEDOT) and a peak area derived from the polystyrene sulfonate anion is A(PSS), measured by X-ray photoelectron spectroscopy, A(PEDOT) and A(PSS) satisfy the following formula (1). 0.50≤A(PEDOT) / A(PSS)≤0.90 (1).SELECTED DRAWING: None

An inorganic light emitting diode device includes: a substrate including a plurality of sub-pixels; a thin film transistor (TFT) in each of the plurality of sub-pixels, wherein the TFT has at least one inorganic layer; an encapsulation layer on an organic light emitting layer, wherein the encapsulation layer includes at least one organic encapsulation layer and at least one inorganic encapsulation layer; and an opening exposing the inorganic layer of the TFT, wherein the opening connects the at least one inorganic encapsulation layer with the inorganic layer of the TFT.

To provide a semiconductor device and a method for manufacturing the same that can easily improve the cooling effect and make the device thinner.SOLUTION: A semiconductor device has: a semiconductor chip having a first surface on which electrode terminals are formed and a second surface on the opposite side of the first surface; and a Peltier element provided on the second surface or on the first surface. The Peltier element has a thermoelectric semiconductor layer including a plurality of thermoelectric semiconductor elements, and the thermoelectric semiconductor element is a sintered body of a coating film of a composition including a thermoelectric semiconductor material.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion module with a low electric resistance.SOLUTION: A thermoelectric conversion module comprises a plurality of lengthy thermoelectric conversion elements electrically connected in series to one another, the lengthy thermoelectric conversion elements comprising at least one kind of thermoelectric conversion element (A) selected from the group consisting of a thermoelectric conversion element (a1) that comprises a lengthy thermoelectric conversion structure body that has a slit extending in a longitudinal direction, and has two ends terminated in the thermoelectric conversion structure body, a thermoelectric conversion element (a2) that comprises a length thermoelectric conversion structure body having at least one slit that extends in the longitudinal direction and has a first end terminated in the thermoelectric conversion structure and an opened second end, and a junction part that is electrically connected to the end on a side where the slit of the thermoelectric conversion structure is opened over an opening of the slit, and a thermoelectric conversion element (a3) that comprises a plurality of lengthy thermoelectric conversion structure bodies disposed in parallel in a direction perpendicular to the longitudinal direction, each of which has a first end and a second end, and a first junction part and a second junction parts that electrically connect the first and the second ends to one another respectively.SELECTED DRAWING: Figure 1

A method of manufacturing a display apparatus includes: forming a plurality of displays including a light-emitting diode on a surface of a first mother substrate; preparing a second mother substrate; forming a first sealed area on a surface of at least one of the first mother substrate or the second mother substrate, wherein the first sealed area surrounds each of the plurality of displays and includes a frit; firstly bonding the first mother substrate to the second mother substrate by melting the frit in the first sealed area by radiating a first laser beam; and secondly bonding the first mother substrate to the second mother substrate by forming a second sealed area in which the frit and the first mother substrate, and / or the frit and the second mother substrate, are melted and mixed with each other by radiating a second laser beam partially in the first sealed area.

A power generating device according to one embodiment of the present invention includes a cooling unit, a thermoelectric module including a thermoelectric element disposed on one surface of the cooling unit and a heat sink disposed on the thermoelectric element, a guide plate disposed opposite the thermoelectric module, and a branch portion disposed on another surface perpendicular to the one surface of the cooling unit, the heat sink including a plurality of heat dissipation fins spaced apart from each other, and a ratio of the shortest horizontal distance between the heat sink and the guide plate to the shortest horizontal distance between the branch portion and the guide plate is 0.0625 to 0.25.

To provide a method for manufacturing Mg3Sb2-based thermoelectric material which is different from conventional mechanical alloying method by ball mill, melting method, and the like.SOLUTION: A method for manufacturing a thermoelectric element includes weighing raw materials (for example, magnesium (Mg) powder and antimony (Sb) powder) (S1), mixing the raw material powders so that the raw material powders weighed in the weighing step S1 are uniform (S2), producing a composite compact by performing pressure-molding on the raw material powders which have been uniformly mixed in the mixing step S2 (S3), and heat-treating the composite compact produced in the molding step S3 at a temperature less than melting points of magnesium and antimony to cause a solid-solid phase reaction between magnesium and antimony, thereby synthesizing a Mg3Sb2-based thermoelectric material (S4).SELECTED DRAWING: Figure 1

To provide a method for manufacturing a thermoelectric conversion module capable of achieving high output.SOLUTION: A method for manufacturing a thermoelectric conversion module includes, in the following order, a first step of preparing a substrate having a first main surface on which a first electrode and a second electrode spaced apart from each other are arranged, a second step of arranging a dam material having an opening portion on the first main surface, a third step of supplying a dispersion liquid including dispersed thermoelectric conversion material therein to the opening portion, a fourth step of removing the dam material, and a fifth step of heating the substrate from a second main surface side located on an opposite side to the first main surface in the thickness direction of the substrate to form a thermoelectric conversion layer in contact with the first electrode and the second electrode.SELECTED DRAWING: Figure 1

Provided is a particle-immobilized substrate (1) that can be easily produced and has inorganic nanoparticles (3) present in a nanometer-scale region. Also provided is a method for easily producing a substrate (2) in which nanoparticles are arranged in a nanometer-scale region on a solid surface. A particle-immobilized substrate (1) includes a substrate (2) and a plurality of inorganic nanoparticles (3) disposed on the substrate (2), in which the plurality of inorganic nanoparticles (3) is disposed in contact with each other in a region having a width (D1) of 1 µm or less on the substrate (2).

To provide a technique capable of enhancing thermoelectric conversion efficiency in a thermoelectric conversion module.SOLUTION: A thermoelectric conversion module includes carbon nanotube yarn that is helically wound around a base material. P-type parts and N-type parts are alternately arranged and are series-connected in an extension direction of the carbon nanotube yarn. One side part of a helix formed by the carbon nanotube yarn is formed as a heat reception part, and the other side part across the base material from the one side part is formed as a heat dissipation part. Lengths of the P-type parts and lengths of the N-type parts are shorter than a length of a one-turn portion of the helix, and the P-type parts and the N-type parts are arranged such that respective one end parts are included in the heat reception part and respective other end parts are included in the heat dissipation part.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion module that improves heat transfer efficiency by efficiently transferring heat applied from the outside and obtains high electromotive force.SOLUTION: A thermoelectric conversion module includes a support, and a thermoelectric element layer in which P-type thermoelectric elements and N-type thermoelectric elements formed on a support are alternately arranged, and adjacent P-type thermoelectric elements and N-type thermoelectric elements are electrically arranged such that electrons move in the direction of the arrangement, and the thermoelectric element layer is made of a coating film, and the thickness difference tdif in the cross section of at least one of the P-type thermoelectric element and the N-type thermoelectric element along the direction perpendicular to the direction of the arrangement is 50 um or less.SELECTED DRAWING: Figure 5

To provide n-type semiconductor materials containing high manganese silicide with excellent thermoelectric properties.SOLUTION: An n-type semiconductor sintered compact contains a polycrystalline material containing high manganese silicide partially substituted with one or more elements other than Mn of Groups 5 to 10, with an electrical conductivity of 10,000 S / m or higher.SELECTED DRAWING: None

To provide a photosensor capable of improving sensitivity.SOLUTION: A photosensor 11a includes: a support film 13, a thermoelectric conversion material part 12, a heat sink 14, a light absorption film, a first electrode 24 and a second electrode 25. The thermoelectric conversion material part 12 includes a plurality of first material layer 21 and a plurality of second material layers 22, and the support film 13 includes: a first layer 17 arranged in the thickness direction on the side of the heat sink 14 and constituted of a phononic structure having a lot of holes; and a second layer 18 formed on the first layer 17, arranged to contact the thermoelectric conversion material part 12 and having insulation properties.SELECTED DRAWING: Figure 5

A thermoelectric element according to one embodiment of the present invention includes a lower metal substrate, a lower insulating layer disposed on the lower metal substrate, a plurality of lower electrodes disposed on the lower insulating layer and spaced apart from each other, a plurality of P-type thermoelectric legs and N-type thermoelectric legs disposed on the plurality of lower electrodes, a plurality of upper electrodes disposed on the plurality of P-type thermoelectric legs and N-type thermoelectric legs and spaced apart from each other, an upper insulating layer disposed on the plurality of upper electrodes, and an upper metal substrate disposed on the upper insulating layer, wherein the lower insulating layer includes a first insulating layer disposed on the lower metal substrate and a plurality of second insulating layers disposed on the first insulating layer and spaced apart from each other.

To provide a silicide alloy material that allows for a reduced environmental load and an increased thermoelectric performance.SOLUTION: A silicide alloy material is primarily composed of silicon and ruthenium and contains boron. The constituent elements of the alloy material are, in an atomic ratio: 45 atm%≤Si / (Ru+Si+B)≤49.5 atm%, 45 atm%≤Ru / (Ru+Si+B)≤49.5 atm%, and 1 atm%≤B / (Ru+Si+B)≤10 atm%, where Si, Ru, and B denote the contents of silicon, ruthenium, and boron respectively.SELECTED DRAWING: None

To provide a silicon-containing composite, a manufacturing method therefor, a carbon composite using the same, an electrode containing the same, the lithium battery and the electronic element.SOLUTION: There is provided a silicon-containing composite 11 containing a porous core 1 containing a porous silicon secondary particle, and a shell 2 containing second graphene 10b on at least a surface of the porous core, in which the porous silicon secondary particle contains an aggregate of 2 or more silicon composite primary particles 10, the silicon composite primary particle contains silicon, silicon suboxide (SiOx) (O<x<2) on at least a surface of the silicon, and one or more containing the first graphene 10a on at least a surface of the silicon suboxide and selected from the first graphene and the second graphene contains one or more element selected from nitrogen (N), phosphorus (P) and sulfur (S).SELECTED DRAWING: Figure 1A

To provide a thermoelectric conversion material which can achieve both thermoelectric conversion performance and conductivity.SOLUTION: The thermoelectric conversion material comprises a prescribed compound and / or a salt of the prescribed compound, and a conductive material (such as a carbon material, a metallic material, and a conductive polymer).SELECTED DRAWING: None