23results about "Thermoelectric device junction materials" patented technology

To provide a thermoelectric conversion material having a high dimensionless thermoelectric figure of merit over a wide temperature range, and a thermoelectric power generation module and a Peltier cooling module using the thermoelectric conversion material.SOLUTION: A thermoelectric conversion material according to the present invention includes a base material containing PbTe, and at least one element selected from the group consisting of elements whose ionic radius with a valence of +1 is smaller than the ionic radius of Pb with a valence of +2, which is contained in the base material, and the element whose ionic radius with a valence of +1 is smaller than the ionic radius of Pb with a valence of +2 is contained in the base material as an ion with a valence of +1, and the content is more than 0at% and less than 10.0at%.SELECTED DRAWING: Figure 8

To provide a thermoelectric conversion material capable of improving the efficiency of thermoelectric conversion.SOLUTION: A thermoelectric conversion material includes a base material composed of SiGe, a first additive element functioning as a dopant, a second additive element different from the first additive element, and oxygen. The second additive element includes at least one of Mg, Ca, and Ti. A content ratio of the second additive element relative to the base material is 0.5 at% or more and 5 at% or less. In a field of view selected such that a grain boundary crosses opposite sides of the field of view to each other that is the field of view of a cross-section of the base material, distributions of the second additive element and oxygen have a positive correlation. A correlation coefficient of the correlation is in a range of 0.2 or more and less than 1.0.SELECTED DRAWING: Figure 7

To provide a manufacturing method of a thermoelectric conversion module capable of an integral multi-bevelling in a thin film without a substrate base material or a solder layer.SOLUTION: A manufacturing method of a thermoelectric conversion module contains steps of (A) to (D): (A) a step of arranging chips of P-type and N-type thermoelectric conversion materials and forming a thermoelectric conversion material layer; (B) a step of forming an insulation layer L1 having P-type and N-type contact holes; (C) a step of forming an insulation layer L2 having P-type and N-type contact holes; and (D) a step of arranging electrode pieces M1 for connecting a pair of P-type and N-type adjacent contact holes onto the insulation layer L1 in a chip arrangement direction with an interval so that the adjacent electrode pieces M1 are not contacted to each other, arranging electrode pieces M2 for connecting a pair of N-type and P-type adjacent contact holes onto the insulation layer L2 in the chip arrangement direction with an interval so that the adjacent electrode pieces M2 are not contacted to each other, and thereby electrically connecting each electrode piece M1, the P-type thermoelectric conversion material, each electrode piece M2, and the N-type thermoelectric conversion material in this order.SELECTED DRAWING: Figure 2

To obtain fine and homogeneous intermetallic compound powder in pulverization by a medium stirring type pulverizer.SOLUTION: A method for producing intermetallic compound powder includes a step of adding nanoceramic powder to metal raw material powder containing a plurality of metal elements to pulverize it using a medium stirring type pulverizer.SELECTED DRAWING: Figure 1

To provide an infrared sensor that can attain a high optical absorption efficiency and a high thermoelectric conversion efficiency.SOLUTION: The infrared sensor includes: a first graphene layer for absorbing infrared rays by using plasmon resonance; a second graphene layer having a connection unit connected to the first graphene layer; a first electrode and a second electrode connected to the second graphene layer, with the connection unit in between; and a control electrode for controlling the distribution of Fermi energy of the second graphene layer between the first and second electrodes, asymmetrically.SELECTED DRAWING: Figure 1

To provide a liquid thermoelectric conversion element in which a small heat flow causes a large temperature difference between a positive electrode and a negative electrode to obtain high electromotive force, and a method for controlling the electrochemical Seebeck coefficient of the liquid thermoelectric conversion element.SOLUTION: A liquid thermoelectric conversion element 10 includes a first electrode 21, a second electrode 22, and an electrolytic solution 30 interposed between the first electrode 21 and the second electrode 22, and the electrolytic solution 30 contains an organic solvent, and oxide ions, and reduction ions.SELECTED DRAWING: Figure 1

An inorganic light emitting diode device includes: a substrate including a plurality of sub-pixels; a thin film transistor (TFT) in each of the plurality of sub-pixels, wherein the TFT has at least one inorganic layer; an encapsulation layer on an organic light emitting layer, wherein the encapsulation layer includes at least one organic encapsulation layer and at least one inorganic encapsulation layer; and an opening exposing the inorganic layer of the TFT, wherein the opening connects the at least one inorganic encapsulation layer with the inorganic layer of the TFT.

To provide a semiconductor device and a method for manufacturing the same that can easily improve the cooling effect and make the device thinner.SOLUTION: A semiconductor device has: a semiconductor chip having a first surface on which electrode terminals are formed and a second surface on the opposite side of the first surface; and a Peltier element provided on the second surface or on the first surface. The Peltier element has a thermoelectric semiconductor layer including a plurality of thermoelectric semiconductor elements, and the thermoelectric semiconductor element is a sintered body of a coating film of a composition including a thermoelectric semiconductor material.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion module with a low electric resistance.SOLUTION: A thermoelectric conversion module comprises a plurality of lengthy thermoelectric conversion elements electrically connected in series to one another, the lengthy thermoelectric conversion elements comprising at least one kind of thermoelectric conversion element (A) selected from the group consisting of a thermoelectric conversion element (a1) that comprises a lengthy thermoelectric conversion structure body that has a slit extending in a longitudinal direction, and has two ends terminated in the thermoelectric conversion structure body, a thermoelectric conversion element (a2) that comprises a length thermoelectric conversion structure body having at least one slit that extends in the longitudinal direction and has a first end terminated in the thermoelectric conversion structure and an opened second end, and a junction part that is electrically connected to the end on a side where the slit of the thermoelectric conversion structure is opened over an opening of the slit, and a thermoelectric conversion element (a3) that comprises a plurality of lengthy thermoelectric conversion structure bodies disposed in parallel in a direction perpendicular to the longitudinal direction, each of which has a first end and a second end, and a first junction part and a second junction parts that electrically connect the first and the second ends to one another respectively.SELECTED DRAWING: Figure 1

To provide a technique capable of enhancing thermoelectric conversion efficiency in a thermoelectric conversion module.SOLUTION: A thermoelectric conversion module includes carbon nanotube yarn that is helically wound around a base material. P-type parts and N-type parts are alternately arranged and are series-connected in an extension direction of the carbon nanotube yarn. One side part of a helix formed by the carbon nanotube yarn is formed as a heat reception part, and the other side part across the base material from the one side part is formed as a heat dissipation part. Lengths of the P-type parts and lengths of the N-type parts are shorter than a length of a one-turn portion of the helix, and the P-type parts and the N-type parts are arranged such that respective one end parts are included in the heat reception part and respective other end parts are included in the heat dissipation part.SELECTED DRAWING: Figure 1

To provide a photosensor capable of improving sensitivity.SOLUTION: A photosensor 11a includes: a support film 13, a thermoelectric conversion material part 12, a heat sink 14, a light absorption film, a first electrode 24 and a second electrode 25. The thermoelectric conversion material part 12 includes a plurality of first material layer 21 and a plurality of second material layers 22, and the support film 13 includes: a first layer 17 arranged in the thickness direction on the side of the heat sink 14 and constituted of a phononic structure having a lot of holes; and a second layer 18 formed on the first layer 17, arranged to contact the thermoelectric conversion material part 12 and having insulation properties.SELECTED DRAWING: Figure 5

To provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.SOLUTION: There is provided a bolometer manufacturing method which includes the steps of: fabricating a set of two carbon nanotube wires that are approximately parallel to each other at edges of a line shape, or fabricating a circular shape carbon nanotube wire at a circular circumference of a circular shape, by applying a semiconducting carbon nanotube dispersion liquid in the line shape or the circular shape on a substrate, and drying the dispersion liquid, a line width of each wire being 5 μm or more; and connecting a part of each wire to a first electrode and a second electrode.SELECTED DRAWING: Figure 4

To provide a bolometer having a high TCR value and low resistance and a method for manufacturing the same.SOLUTION: According to the present invention, a method for manufacturing a bolometer is provided that includes the processes of fabricating an intermediate layer on a substrate in a predetermined shape that functions to enhance the bonding between the substrate and carbon nanotubes, and moving a semiconductor-type carbon nanotube dispersion in one direction relative to the intermediate layer on the fabricated intermediate layer.SELECTED DRAWING: Figure 2

To provide a nanocarbon material that is of a controlled n-type and has thermostability at high temperatures, and an n-type doping agent and an n-type doping method therefor.SOLUTION: The present invention discloses an n-type doping method that uses an n-type doping agent containing at least one compound selected from amidine and guanidine compounds to make the n-type doping agent contact and permeate the surface of a nanocarbon material. The method can provide a nanocarbon material that can retain n-type properties for a long time even in the air and at high temperatures, allowing stable operation of molecular elements.SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion material having excellent thermoelectric conversion performance and excellent stability over time at high temperature and high humidity, and a thermoelectric conversion element using the same.SOLUTION: The thermoelectric conversion material includes 1,5,7-triazabicyclo[4.4.0]deca-5-ene (A), a conductive material (B), and a polymer (C) including a monomer unit derived from (meth)acrylonitrile. The thermoelectric conversion element has a thermoelectric conversion film formed using the thermoelectric conversion material and an electrode. The thermoelectric conversion film and the electrode are electrically connected to each other.SELECTED DRAWING: None

An organic electroluminescence device includes: a cathode; an anode; and an organic thin-film layer disposed between the cathode and the anode, the organic thin-film layer having one or more layers including an emitting layer, in which the emitting layer includes a first material represented by the following formula (1) and a second material in a form of a fluorescent dopant material.

To provide a thermoelectric conversion material layer having high thermoelectric performance and a thermoelectric conversion module including it, the thermoelectric conversion material layer containing thermoelectric conversion material having further improved electric conductivity.SOLUTION: A thermoelectric conversion material layer contains thermoelectric conversion material composed of a thermoelectric semiconductor composition containing thermoelectric semiconductor particles, binder resin, and ionic liquid. The average particle diameter of the thermoelectric semiconductor particles is equal to or larger than 8.0 μm and less than 50.0 μm.SELECTED DRAWING: Figure 1

To provide a novel thermoelectric conversion material which is low in thermal conductivity, exhibits excellent thermoelectric effects in the temperature range from room temperature to 500°C, and contains, as main constituents, a half-Heusler compound having semiconductor characteristics that can be adjusted to both P type and N type, and a method for producing the same, and also to provide a thermoelectric conversion element and a thermoelectric conversion module which include the thermoelectric conversion material.SOLUTION: Provided is a thermoelectric conversion material which contains at least magnesium (Mg), vanadium (Vd), nickel (Ni), and antimony (Sb), which has a composition represented by general formula: Mg2-pV1+pNi3Sb3-qMq (where, p and q satisfy -0.5≤p≤0.5 and 0≤q≤1.0, and M represents one or both of tin (Sn) and tellurium (Te)), and which contains, as main constituents, a half-Heusler compound.SELECTED DRAWING: Figure 17

To provide thermoelectric conversion modules capable of dealing with such as a wide surface or a curved surface, and also to provide methods of manufacturing such thermoelectric conversion modules.SOLUTION: There is provided, a photoelectric conversion module 101 in which a metal layer 2 and a conductive polymer layer 1 are alternately stacked without gaps therebetween; an insulating layer 3 and an electrode layer 4, and an insulating layer 3 and an electrode layer 5 are joined on both faces of the conductive polymer layer 1, respectively; the electrode layers 4, 5 are located respectively on a first end side of a first face of the conductive polymer layer 1 and a second end side of a second face on an opposing side of the first end side; and the conductive polymer layer 1 and the metal layer 2 are electrically connected via the electrode layer 4 or the electrode layer 5. The metal layer 2, the conductive polymer layer 1, the insulating layer 3, and the electrode layers 4, 5 are laminated to be step-like overall. In addition, provided is a method of manufacturing a thermoelectric conversion module, in which, when a metal layer 2, an insulating layer 3 and a conductive polymer layer 1 are laminated to manufacture a thermoelectric conversion module 101, these layers are laminated to be step-like overall.SELECTED DRAWING: Figure 2

To provide an optical sensor capable of reducing a noise equivalent power.SOLUTION: An optical sensor including: a supporting film having a first main surface and a second main surface that is positioned opposite in a thickness direction to the first main surface; a thermoelectric conversion material part that incudes a plurality of band-like first material layers composed of SiGe with a p-type conductive type, and converting thermal energy into electric energy, and a plurality of band-like second material layers composed of SiGe having an n-type conductive type, and converting the thermal energy into the electric energy, and is arranged on the first main surface; a heat sink arranged on the second main surface; and a light absorption film that is arranged so as to from a temperature difference in each of a longer direction of the first material layer and a longer direction of the second material layer in view of a direction vertical to the first main surface, and converts the received light into the thermal energy. The plurality of first material layers and the plurality of second material layers are constructed by a first phononic structure having a plurality of vacancies.SELECTED DRAWING: Figure 4

To provide an electrolyte for thermal conversion capable of improving a dimensionless figure of merit (ZT), a thermochemical battery comprising the same, a temperature control device, and a thermoelectric sensor.SOLUTION: An electrolyte for thermoelectric conversion according to an embodiment of the present invention includes a redox pair and an acidic aqueous solvent, and the redox pair is an oxo aqua vanadium complex.SELECTED DRAWING: Figure 2

To provide a Cu2Se-based thermoelectric conversion material with excellent thermoelectric performance, and a thermoelectric conversion element based thereon.SOLUTION: A thermoelectric conversion material is a composite containing: a doped or undoped Cu2Se-based compound containing a substance represented by the general formula M12M2, where M1 is copper (Cu) and / or silver (Ag), and M2 is at least one selected from the group consisting of selenium (Se), sulfur (S), iron (Fe) and tellurium (Te); and an oxide containing M1, M2, and oxygen (O).SELECTED DRAWING: Figure 1

To provide a thermoelectric conversion material with excellent thermal power conversion performance and chemical resistance.SOLUTION: A thermoelectric conversion element includes a thermoelectric conversion material containing a hydrogenation nitrile rubber (A) and a conductive material (B), a thermal power conversion film formed by containing the thermoelectric conversion material, and an electrode. The thermal power conversion film and the electrode are electrically connected. Preferably, in the thermoelectric conversion material, the hydrogenation nitrile rubber (A) contains a unit derived from acrylonitrile of 10 mass% or more and less than 50 mass%.SELECTED DRAWING: None