57results about How to "Reduce device voltage" patented technology

A vertical Hall device includes: a semiconductor substrate including a magnetic field detection portion, a current portion and an output portion. The output portion includes a pair of output terminals. The current portion is capable of supplying the current to the magnetic field detection portion and retrieving the current from the magnetic field detection portion. The current portion is sandwiched between a pair of the output terminals in such a manner that the current portion is disposed apart from a line connecting between a pair of the output terminals.

An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive base-plate of doped silicon is then bonded to the reflective layer.

A light emitting polymer composition comprising a light emitting polymer and a compound selected from the following formulae (1a) to (1d):

(wherein, X represents an atom or atomic group forming a 5-membered or 6-membered ring together with four carbon atoms on two benzene rings in the formula, Q and T represent each independently a hydrogen atom, halogen atom, alkyl group, alkyloxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkyloxy group, arylalkylthio group, alkenyl group, alkynyl group, arylalkenyl group, arylalkynyl group, substituted silyloxy group, substituted silylthio group, substituted silylamino group, substituted amino group, amide group, acid imide group, acyloxy group, mono-valent heterocyclic group, heteroaryloxy group, heteroarylthio group, cyano group or nitro group).

The present invention relates to an EL device which is driven with a lower voltage or power amount, which is superior in interface stability between layers in the device and which has a higher luminance as compared with the use of a conventional electrode, and is characterized in that in the EL device comprising a light emitting layer disposed as an essential layer between two electrodes facing each other, at least one of the electrodes includes a crystalline conductive film whose diffraction intensity ratio of (400)/(222) is 1.0 or more in X-ray diffraction by a θ/2θ method.

Circuit module designs that incorporate dual gate field effect transistors are implemented with fully depleted silicon-on-insulator (FD-SOI) technology. Lowering the threshold voltages of the transistors can be accomplished through dynamic secondary gate control in which a back-biasing technique is used to operate the dual gate FD-SOI transistors with enhanced switching performance. Consequently, such transistors can operate at very low core voltage supply levels, down to as low as about 0.4 V, which allows the transistors to respond quickly and to switch at higher speeds. Performance improvements are shown in circuit simulations of an inverter, an amplifier, a level shifter, and a voltage detection circuit module.

A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.

An organic compound with characteristics excelling in hole-injecting/transporting performance and having an electron blocking ability, a highly stable thin-film state, and excellent heat resistance is provided as material for an organic electroluminescent device of high efficiency and high durability, and the organic electroluminescent device of high efficiency and high durability is provided using this compound. The compound of a general formula (Chemical Formula 1) having a substituted acridan ring structure is used as a constituent material of at least one organic layer in the organic electroluminescent device that includes a pair of electrodes and one or more organic layers sandwiched between the pair of electrodes.

The present invention relates to an organic thin film transistor (OTFT) comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer formed on the gate electrode, a source electrode (5) and a drain electrode (6) formed on the gate insulation layer including a first insulation layer (3) and a second insulation layer (4) with different dielectric constants, and an active layer (7) which overlays the source electrode (5) and the drain electrode (6). Without adding the conventional complicated processes like photolithography but adding two simple processes of spin coating or vaporously coating the second insulation film and self-aligned dry RIE, the present invention not only can improve the carrier's injection property so as to improve the OTFT device's properties, but also can block the leakage current of the gate insulation layer and reduce the device's parasitic capacitance. Therefore, the material with high dielectric constant can be used as the insulation layer to increase the channel capacitance so as to reduce threshold voltage of the device and reduce the adverse effect of the leakage between the source and gate electrodes, the gate and drain electrodes.

Objects of the present invention are to provide an organic compound having excellent properties, which is excellent in electron-injecting/transporting performances, has hole-blocking ability and is highly stable in a thin-film state, as a material for an organic electroluminescent device having a high efficiency and a high durability; and to provide an organic electroluminescent device having a high efficiency and a high durability using the compound. The invention relates to a compound having a substituted pyridyl group and a pyridoindole ring structure linked through a phenylene group, which is represented by the general formula (1); and an organic EL device comprising a pair of electrodes and at least one organic layer interposed between the electrodes, wherein the at least one organic layer contains the compound:

wherein Ar represents a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted condensed polycyclic aromatic group; R₁ to R₁₄ may be the same or different from each other and each represents a hydrogen atom, a fluorine atom, a chlorine atom, a cyano group, a trifluoromethyl group, a linear or branched alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted condensed polycyclic aromatic group; n represents an integer of 1 to 3; and W, X, Y, and Z respectively represent a carbon atom or a nitrogen atom, provided that only one of W, X, Y, and Z represents a nitrogen atom, and the nitrogen atom does not have the substituent of R₇, R₈, R₉, or R₁₀).

A compound having a benzotriazole ring structure and a formula (1):

wherein Ar is a substituted or unsubstituted aromatic hydrocarbon group, aromatic heterocyclic group, or condensed polycyclic aromatic group; A and B are the same as or different from each other and each represent a hydrogen atom or a monovalent group of formula (2), provided that A and B are not simultaneously hydrogen atoms:

wherein R₁ to R₈ are the same as or different and each represent a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a cyano group, a trifluoromethyl group, a linear or branched alkyl group having 1 to 6 carbon atoms, aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or condensed polycyclic aromatic group; m is an integer of 0, 1 or 2; X represents a carbon atom or a nitrogen atom; when X is a nitrogen atom, the nitrogen atom does not have substituents or bonding groups of R₁, R₂, R₃ and R₄; and when m is 2, a plurality of R₁, R₂, R₃, R₄ and X each are the same or different.

The present invention relates to a novel heterocyclic derivative and an organic light emitting device using the compound, and the heterocyclic derivative may largely improve a life span, efficiency, electrochemical stability and thermal stability of the organic light emitting device.

An organic compound with excellent characteristics excelling in hole injecting and transporting performance and having an electron-blocking ability, high stability in a thin film state and excellent heat resistance is provided as a material for an organic electroluminescent device of high efficiency and high durability, and the organic electroluminescent device of high luminous efficiency and high durability is provided using this compound. The compound of a general formula (1) having an indenoacridan ring structure is used as a constituent material of at least one organic layer in the organic electroluminescent device that includes a pair of electrodes and one or more organic layers sandwiched between the pair of electrodes.

Provided is a white organic electroluminescent device, composed of a substrate, an anode layer, an anode modification layer, a hole transporting-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole blocking-electron transporting layer, a cathode modification layer, and a cathode layer arranged in turn, wherein the electron-dominated light-emitting layer is composed of an organic sensitive material, a blue organic light-emitting material, and an electron-type organic host material. A rare earth complex having a matched energy level, such as Tm(acac)₃Phen or Dy(acac)₃phen is selected as the organic sensitive material, and a trace amount of the same is doped into the electron-dominated light-emitting layer, which has the function of an energy transporting ladder and a deep binding center for charge carriers, so as to improve the light-emitting effectiveness, spectral stability, and service life of the device, reduce the operating voltage of the device, and delay the attenuation of the effectiveness of the device.

A silicon controlled rectifier, an electrostatic discharge (ESD) protection circuit including the silicon controlled rectifier and an integrated circuit including the silicon controlled rectifier or ESD protection circuit. The silicon controlled rectifier includes a first region having a first conductivity type and a second region having a second conductivity type located adjacent the first region in a semiconductor substrate. A junction is formed at a boundary between the first region and the second region. Contact regions of the first conductivity type and the second conductivity type located in each of the first region and the second region. A further contact region of the second conductivity type is located in the second region, in between the contact region of the first conductivity type and the junction. The further contact region and the contact region of the second conductivity type in the second region are connected together for biasing the second region.

A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

The present invention provides a novel compound that is capable of largely improving a life span, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer.