6146 results about "Contact region" patented technology

A tissue approximation device and processes for using the device are provided. The device is an implantable, biodegradable construct that has attachment points emanating from a supportive backing. The device improves the mechanical phase of wound healing and optimally distributes tension over the contact area between the device and tissue. Processes for using the device include soft tissue attachment and soft tissue to bone attachment. Several variations are particularly applicable to facilitating tissue approximation in surgical cosmetic applications, particularly chin lifts. Generally, tissue to be lifted may be set on a chin lift device via attachment points before or after the device is secured to a patient's bone. Variations of the device are described along with a method of installing the chin lift device. Also described is a tool particularly useful for installing a chin lift device.

A fastening apparatus includes a fastener and a fastener receiving member. The apparatus enables the fastener to be affixed to the fastener receiving member at a variable insertion angle selected by the user. The fastener includes an elongate section and an adjoining head section. Both the elongate section and the head section are threaded. The fastener receiving member includes one or more apertures through which one or more corresponding fasteners can be inserted. Each aperture includes a contact region formed or disposed on an inside surface defining the aperture. The contact region includes a porous matrix of protrusions or fiber metal having a density and strength sufficient to render contact region tappable by the thread of the head section of the fastener. The thread on the head section is driven into the contact region at the selected insertion angle. As a result, the thread of the head section taps into the material of the contact region such that the fastener is affixed to the fastener receiving member and maintained at the insertion angle.

Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.

A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.

A structurally supported tire includes a ground contacting tread portion, a reinforced annular band disposed radially inward of the tread portion, and a plurality of web spokes extending transversely across and radially inward from the reinforced annular band and anchored in a wheel or hub. The reinforced annular band comprises an elastomeric shear layer, at least a first membrane adhered to the radially inward extent of the elastomeric shear layer and at least a second membrane adhered to the radially outward extent of the elastomeric shear layer. Each of the membranes has a longitudinal tensile modulus sufficiently greater than the shear modulus of the shear layer so that when under load the ground contacting portion of the tire deforms to a flat contact region through shear strain in the shear layer while maintaining constant the length of the membranes, the web spokes transmitting load forces between the annular band and the hub through tension in the web spokes not connected to the ground contacting portion of the tire.

First, second and third lighting devices each comprise a thermal conduction element, solid state light emitters and a reflective element. In the second device, the conduction element defines an opening; and the emitters and reflective element are mounted on a first side of the conduction element. In the third device, the conduction element defines an opening; a first portion of a first side of the conduction element is in contact with a contact region of a construction surface; and the emitters and reflective element are mounted on the first side. A fourth device comprises a conduction element and emitters; a first portion of a first side of the conduction element is in contact with a contact region of a construction surface; the emitters are mounted on a second portion of the first side of the conduction element; and a second side of the conduction element is exposed to ambient air.

An input device includes: a contact detector configured to detect at least a size of contact area by detecting a physical contact with a control input section; a pressure detector configured to detect a pressure applied by the physical contact; and a controller configured to output signals in response to detection outputs from the contact detector and the pressure detector. The controller outputs a first signal carrying a value which varies in response to the pressure detected under a state of contact in which a contact detection result indicates that the detected contact area is equal to or smaller than a predetermined contact area, and outputs a second signal carrying a value which varies in response to the pressure detected under a state of contact in which the contact detection result indicates that the detected contact area is greater than the predetermined contact area.

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

The present invention provides an intervertebral implant for implantation in a treated area of an intervertebral space between vertebral bodies of a spine. The implant includes a spacer portion having an inferior and superior surface, wherein the inferior and superior surfaces each have a contact area capable of engaging with anatomy in the treated area, and the inferior and superior surfaces define a through-hole extending through the spacer body. The present invention further provides screw holes extending from a side portion to the inferior and superior surfaces of the spacer portion and a plate portion rigidly coupled to the spacer portion through a coupling means, wherein the plate portion contains screws holes for receiving screws. A screw back out prevention mechanism adapted on the plate portion and prevents the back out of screws from the screw holes.

Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.

Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a contact layer on the exposed contact region of the nitride-based channel layer, for example, using a low temperature deposition process, forming an ohmic contact on the contact layer and forming a gate contact disposed on the barrier layer adjacent the ohmic contact. A high electron mobility transistor (HEMT) and methods of fabricating a HEMT are also provided. The HEMT includes a nitride-based channel layer on a substrate, a barrier layer on the nitride-based channel layer, a contact recess in the barrier layer that extends into the channel layer, an n-type nitride-based semiconductor material contact region on the nitride-based channel layer in the contact recess, an ohmic contact on the nitride-based contact region and a gate contact disposed on the barrier layer adjacent the ohmic contact. The n-type nitride-based semiconductor material contact region and the nitride-based channel layer include a surface area enlargement structure.

Back contact solar cells including rear surface structures and methods for making same. The rear surface is doped to form an n⁺ emitter and then coated with a dielectric layer. Small regions are scribed in the rear surface and p-type contacts are then formed in the regions. Large conductive grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.

A semiconductor device according to an aspect of the invention comprises an n-type FinFET which is provided on a semiconductor substrate and which includes a first fin, a first gate electrode crossing a channel region of the first fin via a gate insulating film in three dimensions, and contact regions provided at both end of the first fin, a p-type FinFET which is provided on the semiconductor substrate and which includes a second fin, a second gate electrode crossing a channel region of the second fin via a gate insulating film in three dimensions, and contact regions provided at both end of the second fin, wherein the n- and the p-type FinFET constitute an inverter circuit, and the fin width of the contact region of the p-type FinFET is greater than the fin width of the channel region of the n-type FinFET.

An intermediate element for a detachable, lockable, ball joint-like connection in a device for the dynamic fixation of bones has a longitudinal axis, an outer wall concentric with the longitudinal axis, and an inner wall forming a coaxial cavity. Either the outer wall or the inner wall comprises one of two contact zones that form the ball joint-like connection. The intermediate element is at least partly made of a super-elastic or visco-elastic material.