1284 results about "Contact region" patented technology

The invention relates to the technical field of semiconductor manufacturing, in particular to an accurate detection method and system for a flat-edge sheet wafer placement rotary chuck, and the method comprises the steps: when a wafer is placed on the rotary chuck, scanning the lap joint condition of a wafer edge and a chuck contact area through a laser sensor, and obtaining the real-time distribution data of an edge lap joint sheet; flat edge position information is extracted from the edge lap joint distribution data, an image matching algorithm is adopted to compare a preset orientation reference, and a specific angle value of orientation deviation is determined; according to the orientation deviation angle value and the edge lapping piece distribution data, the rotating speed and the angle of the rotating chuck are adjusted through a cooperative control algorithm, and a final positioning result of the wafer on the chuck is obtained; after a final positioning result is obtained, the in-place state of the wafer is classified and judged through a deep learning model, and whether the residual deviation or wafer lapping phenomenon exists or not is determined; and extracting abnormal data from a classification judgment result, and adjusting collaborative parameters of carrying and placing according to the abnormal data to obtain an optimized process control scheme.

The invention provides a full-focusing ultrasonic imaging method for multi-modal damage of a composite material, and the method comprises the steps: calculating the correlation of the reflection intensity of a sound wave signal at different moments and spatial positions through employing an established quantitative corresponding relation, recognizing a close contact region and a loose separation region between a bonding layer and a substrate, and carrying out the recognition of the close contact region and the loose separation region. Judging the continuity distribution condition of the interface contact state; according to the continuous distribution condition of the interface contact state, key feature points of dynamic damage evolution are extracted, a time sequence analysis method is adopted to track the feature points to adapt to damage features of dynamic changes, and prediction data of the damage expansion trend are obtained; and according to the dynamic representation result of the interface state, fusing the obtained multi-period signal characteristic data, carrying out quantitative calculation on the area change of the debonding region, judging the residual distribution state of the bonding strength, and obtaining a comprehensive evaluation report of the damage degree of the bonding interface.

The invention provides a method for automatically measuring the thickness of an oxide layer on the surface of an aluminum profile, and the method comprises the steps: scanning a hanging tool contact region on the surface of the aluminum profile, obtaining an aluminum profile surface image, carrying out the edge contour recognition of the aluminum profile surface image, determining the coordinate position of a hanging tool contact point, and obtaining a contact point region range; dynamically adjusting a measurement probe avoidance path according to the boundary coordinates of the uncertain measurement area, generating a measurement track bypassing the uncertain measurement area, and determining a compensation measurement point position sequence according to the boundary of the effective measurement area and the uncertain measurement area; the measuring probe is guided to execute thickness scanning in the effective measuring area through the compensation measuring point position sequence, the oxide layer thickness value of each measuring point is obtained through scanning, and an oxide layer thickness data set is formed; and generating a final oxide layer thickness evaluation report according to the corrected thickness value and the effective measurement area range, and fusing the boundary coordinates of the uncertain measurement area and the oxide layer thickness distribution characteristics to determine the surface oxide layer thickness of the aluminum profile.

The invention relates to a cooling device for cooling an electrical and / or electronic assembly (2), said cooling device comprising: a top plate (3) and a bottom plate (4), the bottom plate (4) being a deep-drawn component having a depression (40), the top plate (3) and the bottom plate (4) being arranged such that, due to the depression (40) a cooling channel (5) is formed between the top plate (3) and the bottom plate (4), the top plate (3) and the bottom plate (4) being connected to one another at a contact region (8) outside the depression (40), it being possible for a cooling fluid flow of a cooling fluid to flow through the cooling channel (5) along the longitudinal direction (11), the cooling device (1) also comprising at least one turbulator (6) that is arranged inside a turbulator section (56) of the cooling channel (5). According to the invention, a turbulence portion (61) for generating local turbulence in the flow of the cooling fluid and a blocking region (62) for locally blocking the flow of the cooling fluid are formed on the turbulator (6).

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

An example of a controller according to an exemplary embodiment includes a housing including an opening, an input device including a movable member penetrating through the opening in a first direction to inside of the housing, and a contact area that is provided inside the housing. The movable member is configured to be able to be pressed and tilted relative to an axis in the first direction. When the movable member is tilted, the movable member comes into contact with the contact area and is restricted from being further tilted. The contact area is inclined to face the movable member relative to a plane perpendicular to the axis in the first direction.

The invention relates to the technical field of semiconductors, in particular to a source heterojunction contact semiconductor structure and device and a manufacturing method, the semiconductor structure comprises a gate structure, a body region structure, a source structure and a drain structure, and the source structure comprises a polycrystalline silicon source contact layer; the semiconductor structure comprises a body region structure and a polycrystalline silicon source contact layer, the body region structure is surrounded by the gate structure, a source contact region is arranged in the body region structure, the polycrystalline silicon source contact layer is in contact with the source structure through the source contact region so as to form a heterojunction diode with the source structure, and the heterojunction diode is a freewheeling diode of the semiconductor structure. The drain electrode structure is located on one side, back to the gate electrode structure, of the body region structure; the semiconductor structure can be a SiC MOSFET structure, reverse conduction voltage drop during follow current of the SiC MOSFET can be greatly reduced, and conduction loss and loss caused during switching are reduced.

The invention discloses a semiconductor device and a manufacturing method thereof, and electronic equipment, and belongs to the technical field of semiconductors, and the semiconductor device comprises a plurality of layers of storage units which are stacked in the direction perpendicular to a substrate; the memory cell includes: a transistor; the transistor comprises a grid electrode extending in the direction perpendicular to a substrate, a semiconductor layer surrounding the side wall of the grid electrode, and a transition layer surrounding the side wall of the semiconductor layer and making contact with the semiconductor layer. Wherein the transition layer comprises two conductive contact areas which are isolated from each other, and two insulating areas which are positioned between the two conductive contact areas.

The present invention relates to a contact (70) for a flat plug connector (50), and a flat plug connector (50) for a flat plug connector system (1), wherein the flat plug connector (50) has at least one contact (70) according to the contact (70) for a flat plug connector, andwherein the contact (70) has a terminal portion (71) for electrically conductive connection to an electronic component;wherein the contact (70) has a retaining portion (73) for fixing in a plug connector housing (51);wherein the contact (70) has a contact portion for electrically conductively contacting a complementary contact (34),wherein the contact portion is connected to the retaining portion (73) by means of a bent portion (74) of the contact (70),wherein the contact portion has a bent contact region (76) for electrically conductively contacting a complementary contact (34),wherein the contact portion has a first portion (75) which is arranged between the bent contact region (76) and the retaining portion (73), wherein the first portion (75) and the retaining portion (73) enclose an acute angle, andwherein the contact portion has a second portion (77) which is arranged opposite the first portion (75) relative to the bent contact region (76), and wherein the second portion (77) has a support portion (78) which is configured to be supported at the retaining portion (73) by the support portion (78) upon deflection of the contact portion towards the retaining portion (73).

The invention relates to an indirect rear viewing system for a motor vehicle having a supporting element for fastening at least one reflective element, wherein the supporting element has a coupling region for a position variable fastening / attachment to an adjusting element, which in turn can be attached to the vehicle, wherein the coupling region contacts a counter contact regions, of the adjusting element, wherein interlocking anti rotation means are present on the supporting element and on the adjusting element, wherein the anti rotation means are forming an index geometry, which, in a first operating state, permits an adjustment of the supporting element relative to the adjusting element about two axes of rotation, which are transverse to one another, and, in at least a second operating state, permits a basic position change of the supporting element relative to the adjusting element about a third axis of rotation which is aligned transversely to the two other axes of rotation.

The invention relates to a plug connector component (7) for a multi-part plug connector (8), having - a connection interface (10) for connecting to at least one other compatible plug connector component (9) of the multi-part plug connector (8); - a primary contact region (15) for forming at least part of a primary plug interface (16) for connecting to a corresponding mating plug connector (3, 3') of the multi-part plug connector (8); - a connection region (13) for connecting at least one electrical conductor (6); and - at least one electrical contact element (11), which can be connected to the electrical conductor (6) in the connection region (13) and which extends from the connection region (13) at least into the connection interface (10), the electrical contact element (11) being connectable to a compatible electrical contact element (12) of the compatible plug connector component (9) in the connection interface (10).

The invention relates to a cooling device for cooling an electrical and / or electronic assembly (2), said cooling device comprising: a top plate (3) and a bottom plate (4), the bottom plate (4) being a deep-drawn component comprising a depression (40), the top plate (3) and the bottom plate (4) being arranged such that, due to the depression (40), a cooling channel (5) is formed between the top plate (3) and the bottom plate (4), the top plate (3) and the bottom plate (4) being connected to one another at a contact region (8) outside the depression (40), it being possible for a cooling fluid flow of a cooling fluid to flow through the cooling channel (5), the cooling device (1) further comprising at least one turbulator (6) arranged inside the depression (40) of the cooling channel (5), the turbulator (6) adjoining a bottom surface (44) in the depression (40) of the bottom plate (4) and the bottom surface (44) facing the top plate (3). According to the invention, the bottom plate (4) comprises an embossment (7) in a bending region (43) on the edge of the bottom surface (44).

The invention discloses a semiconductor device which comprises a cellular structure, and the cellular structure comprises an N + substrate, an N-drift layer and a functional area. The N-drift layer is located on the N + substrate; the functional region is embedded into one side, away from the N + substrate, of the N-drift layer, the functional region comprises two subunits and a second N + source region, and each subunit comprises a P + contact region, a P-type body region, a first N + source region and a first trench gate structure; the first N + source region is located on the P-type body region, the first groove is located between the P-type body region and the P + contact region, the first gate oxide layer covers the inner wall of the first groove, a first filling groove is formed in the inner wall of the first gate oxide layer, the first gate is filled in the first filling groove, and the P + shielding region of the P + contact region covers the bottom of the first gate oxide layer; and a second N + source region is arranged between the first trench gate structures of the two subunits. According to the device, the effective utilization rate of a channel can be improved, the specific on-resistance is further reduced, and the problem of long reverse recovery time is solved.

The invention relates to the technical field of program control, in particular to a reamer machining path intelligent optimization method and system based on artificial intelligence, and the method comprises the following steps: collecting a reamer main shaft load torque and a Z-axis feed current in the process that a reamer cuts into a workpiece, and generating a reaming contact area resistance characterization quantity; and mapping the resistance characterization quantity of the reaming contact area to generate a hardness distribution characteristic value of the workpiece material. According to the method, differential operation is carried out on a generated nonlinear track, the acceleration change rate of the nonlinear track is extracted, the dynamic complexity of a motion state is quantitatively evaluated, the dynamic complexity is combined with a contour error predicted by AI, a dynamically weighted feed-forward compensation amount is formed, and when a motion instruction is complex and the system following capability faces challenges, the compensation effect is enhanced; according to the predictive compensation mechanism, active suppression can be carried out before the servo error actually occurs, and the contour tracking precision of a complex nonlinear instruction is improved.

The invention discloses a method for metalizing a wafer-level glass through hole, which comprises the following steps of: providing a glass wafer which is provided with a micro through hole; a carrier wafer is provided, the size of the carrier wafer is 12 inches, and the size of the carrier wafer is larger than that of the glass wafer; sputtering a seed layer on the first surface of the carrier wafer, wherein the material of the seed layer is Ti / Cu; temporarily bonding the glass wafer and the seed layer on the first surface of the carrier wafer, and forming a PIN contact area at the edge of the seed layer; a single-face electroplating process is carried out on the glass wafer, so that the micro through hole is metalized, and the electroplating PIN realizes current transmission through a PIN contact area; and de-bonding, and removing the carrier wafer and the seed layer to obtain the glass wafer filled with the micro-through-hole metallization. According to the method, the technological process and technical difficulty of TGV through hole metallization are simplified, micro through hole metallization can be achieved through single-face electroplating, and the effects of saving cost and improving efficiency are achieved to a great extent.

The invention relates to the technical field of digital twinning, and discloses a cultural relic virtual restoration simulation method and system based on digital twinning. The method comprises the following steps: constructing a cultural relic digital twinborn body fusing geometric morphology and physical attributes; collision contact between the virtual tool and the model is detected in real time; calculating stress, deformation and counter-acting force of the contact area through real-time finite element analysis; the reactive force is decomposed into joint torque and high-frequency vibration signals of multi-degree-of-freedom force feedback equipment, and force tactile feedback dynamically matched with material characteristics is provided; and physical parameters and geometric morphology of the model are updated according to the stress overrun condition, so that visual simulation of damage accumulation and fracture is realized. The system comprises a digital twinning construction module, a user interaction interface module, a physical simulation engine module, a force feedback rendering module and a model state updating module. Through a high-frequency closed-loop physical-force sense coupling mechanism, the authenticity, immersion and training reliability of virtual repair are improved.

The invention provides a power device and a preparation method thereof. The preparation method comprises the following steps: forming a P-type layer and an N-type layer on an N-type substrate; forming a groove; performing ion implantation to form an N-type source region; forming a gate oxide layer in the groove; forming a first polycrystalline silicon layer, a thick oxide layer and a second polycrystalline silicon layer in the groove; depositing a dielectric layer; forming a source contact region, wherein the source contact region exposes a part of the N-type source region and a part of the P-type layer; forming an insulating layer; forming a gate contact region, wherein the gate contact region extends into the first polycrystalline silicon layer; forming a drain contact region, wherein the N-type layer is exposed out of the drain contact region; and forming a source electrode, a grid electrode and a drain electrode, wherein the source electrode is simultaneously contacted with the N-type source region and the P-type epitaxial layer. According to the invention, the source electrode, the grid electrode and the drain electrode can be attached to the heat dissipation substrate at the same time, so that the heat dissipation path is greatly optimized, and the access inductance of the source electrode is reduced; the connection of the P-type layer and the N-type source region is formed in the device through the groove, so that the process can be effectively simplified, an additional lead-out process is avoided, and the manufacturing cost is effectively saved.

The invention discloses a uniformity removal trajectory planning method and system suitable for flexible grinding and polishing machining, and the method comprises the steps: S100, building a material removal depth model and a material removal profile at a grinding and polishing point after a flexible grinding and polishing contact wheel is in contact with a workpiece according to the contact pressure in a flexible grinding and polishing profile contact region; s200, correcting the material removal depth model by considering the variable quantity of the chord height error caused by the compliant contact deformation to obtain a corrected material removal depth model; and S300, based on the corrected material removal depth model, the material removal profile is fused into the corrected material removal depth model to realize uniformity removal trajectory planning considering material removal characteristics, and a processing trajectory sequence containing attitude information is obtained. According to the method, equal chord height error step length calculation of contact deformation and equal residual height line spacing calculation of uniform material removal are considered, so that uniform removal trajectory planning of smooth grinding and polishing is realized, and the problem of trajectory discontinuity caused by elastic deformation is remarkably reduced.

The present invention provides a laser cutting device for profile cutting, which belongs to the field of profile laser cutting equipment, including a feed bracket, a cutting bracket fixedly connected to the feed bracket, a material receiving assembly fixedly connected to the cutting bracket, a cutting assembly arranged inside the cutting bracket, and further including: a front clamping assembly, the front clamping assembly arranged below the cutting assembly, the front clamping assembly used to stabilize the position of the rectangular tube and reduce heat transfer; a cleaning assembly arranged inside the front clamping assembly, the cleaning assembly used to keep the surface of the rectangular tube clean; an auxiliary heat dissipation assembly, the auxiliary heat dissipation assembly arranged below the front clamping assembly, the auxiliary heat dissipation assembly used to enhance the heat dissipation effect of the front clamping assembly. This invention effectively suppresses the problem of heat accumulation caused by the continuous action of the laser, prevents local overheating in the contact area between the clamp and the profile, and significantly improves the stability of the clamping system.

The invention relates to a method for manufacturing a bipolar plate (10, 51) for an electrochemical cell unit (53) for converting electrochemical energy into electrical energy as a fuel cell unit (1) and / or for converting electrical energy into electrochemical energy as an electrolytic cell unit (49) having stacked electrochemical cells (52), the method comprising the steps of: providing a first plate 64) and a second plate (65), stacking the first plate (64) and the second plate (65) on top of one another such that inner surfaces (66) of the first and second plate (64, 65) lie on top of one another, applying contact forces to the first and second plates (64, 65) by means of negative pressure in a negative pressure chamber (104) relative to an ambient pressure so that, as a result of the contact forces applied by the ambient pressure, the inner surfaces (66) of the first and second plate (64, 65) lie on top of one another with an additional compression force in a contact region (68) due to the applied contact forces, producing at least one welded joint (69) between the first and second plate (64, 65) by means of a laser beam (74), forming connection channels (89) for process fluids in the first and / or second plate (64, 65), the channels opening into fluid openings (41) in the bipolar plates (10), 51) and into channels (12, 13, 14) for process fluids in the bipolar plates (10, 51), forming connection openings (93) in the first and / or second plate (64, 65) which connect the connection channels (89) to the channels (12, 13, 14) for process fluids in the bipolar plates (10, 51), the connection openings (93) being formed in the first and / or second plate (64, 65) by means of a laser beam (74).

A light-emitting diode chip is specified with - a p-contact region (40) formed with GaP, - a p-type semiconductor region (4), - an n-conducting semiconductor region (3), - an active region (2) between the n-type semiconductor region (3) and the p-type semiconductor region (4), - an outer side surface (14) which limits the p-contact region (40), the p-conducting semiconductor region (4), the n-conducting semiconductor region (3) and the active region (2) in a lateral direction, and - a mixing area (1) at least in the area of ​​the active area (2) on the outer side surface (14) and / or on an inner side surface (19) in an open area (18). The LED chip could be, among other things, a micro-LED.

To provide a semiconductor device capable of reducing on-resistance.SOLUTION: A semiconductor device 1 according to one embodiment includes: a semiconductor substrate 11 of a first conductivity type; and a semiconductor layer 12 of the first conductivity type, and the semiconductor layer includes: a trench gate 14, a source region 15 of the first conductivity type; a contact region 16 of a second conductivity type, and a column region 17 of the second conductivity type. In the semiconductor layer, a plurality of trench gates 14 are discretely formed along a first direction X and a second direction Y; the source region 15 is in contact with the trench gates 14 and surrounds the trench gates 14; the contact region 16 is located between the source regions adjacent in the second direction Y; and the column region 17 extends from an end 16a of the contact region 16 closer to the semiconductor substrate toward the semiconductor substrate 11.SELECTED DRAWING: Figure 3

The invention provides a robot and a grabbing control method thereof, and the method comprises the steps: extracting a contour feature point set of a target object, converting the contact pressure distribution data of the robot during the current grabbing of the target object into a contact state matrix, and recognizing a stable contact region and a potential sliding region based on the contour feature point set and the contact state matrix; further determining a stress mapping matrix of the target object in the grabbing process, and determining the stability margin of the target object grabbed by the robot through the stress mapping matrix; based on the stability margin, a dynamic coupling coefficient of interaction between the dexterous finger of the robot and the target object is determined, and according to the dynamic coupling coefficient, the self-adaptive adjustment requirement of the current grabbing state of the robot is judged; and dynamically adjusting the grabbing force closed-loop control parameters when the robot dexterous finger executes the grabbing action according to the self-adaptive adjustment requirement. By the adoption of the scheme, self-adaptive grabbing force control based on contact state prediction can be achieved, so that the grabbing performance of the robot in the complex object grabbing process is improved.

A developing apparatus comprises a development chamber with a developer bearing member and supply member, and a developer accommodation chamber above it. A stirring member with a sheet member rotates to stir developer. All members rotate along the longitudinal direction, with an opening along the chamber walls. In cross-section, the opening has upstream and downstream ends relative to the stirring member's rotation. At the longitudinal center, the distance from the upstream end to the contact region between the developer bearing member and supply member is shorter than the same distance measured at the longitudinal end.

A metal-ceramic substrate and an electronic component comprising a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body, in a planar manner, the metal layer having a structuring region which comprises: (i) solid material in some areas and (ii) non-solid material in some areas, and c) a contact region comprising silver arranged on the metal layer, wherein, in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, the structuring region has a geometry in which the following requirement is met:A⁡(BCDsolid) / A⁡(BCDtotal)>70⁢%,wherein A (BCDtotal) represents the total area of the triangle described by the points B, C and D, and A (BCDsolid) represents the area of the triangle described by the points B, C and D which is occupied by solid material.

According to the machining method and system for the stainless steel rectangular groove plate, the material thickness and elastic modulus parameters of a 316L stainless steel thin plate are obtained, the stress distribution state in the machining process is monitored in real time through a sensor, and if the stress value exceeds a preset threshold value, the cutting force and machining speed parameters are adjusted; a support vector machine algorithm is adopted to analyze the nonlinear relation between the material thickness and the elastic deformation, and an optimized mechanical parameter control model is obtained; according to stress control data output by the mechanical parameter control model, the machining temperature and vibration frequency information of a contact area of a tool and a workpiece is obtained, if the vibration frequency exceeds a stable machining range, the rotating speed and the feeding amount of a spindle are adjusted in real time, and the influence of thermal deformation on the groove depth precision is corrected through a temperature compensation algorithm; and determining a dynamic processing parameter combination adapted to the characteristics of the thin plate. Intelligent control over the thin plate precision machining process is achieved, and the machining precision and efficiency are effectively improved.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

The utility model discloses a high-temperature fretting fatigue testing device, which belongs to the technical field of tenon connection structure testing and comprises an upper clamp and a lower clamp which are used for fixing a tenon sample and applying acting force to the tenon sample, and a digital integrated circuit (DIC) camera used for observing material deformation and crack progress of the tenon sample, a micro-motion cushion block used for supporting a tenon sample is arranged in the upper clamp, the upper clamp is sleeved with an electromagnetic induction coil, the electromagnetic induction coil is located at the contact area of the tenon sample and the micro-motion cushion block, an observation window is arranged between every two adjacent turns of coils of the electromagnetic induction coil, and the DIC camera faces the observation window and is as high as the observation window; the observation window is reserved between the two turns of coils, and the material deformation and crack initiation progress of the tenon sample can be recorded in real time through the DIC camera; and the clamp is connected with the bearing seat through the joint bearing, so that self-centering of the tenon sample can be realized, deflection torque is prevented from being introduced, and the shape control precision of a friction surface of a contact area is improved.

There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device includes a conductive gate contact penetrating a contact region of a stepped stack structure including a plurality of interlayer insulating layers and a plurality of conductive patterns, which are alternately stacked.

The invention provides an automatic dispensing and curing machine for an optical lens, and relates to the technical field of optical lens equipment. The transfer seat is used for placing and fixing a lens cone, and the transfer seat can move along the Y-axis direction of the workbench under the action of the driving structure so as to move the lens cone to a dispensing position; the dispensing head comprises a dispensing rod, clamping plates and an adjusting piece, and the adjusting piece can drive the clamping plates to relatively open or close to clamp the outer wall of the lens cone; wherein at least one clamping plate is provided with a glue spraying channel, a glue spraying opening can extend into a mounting groove in the outer wall of the lens barrel, and glue is injected into a contact area through a communication hole which is communicated to the contact area of the lens and the lens barrel from the mounting groove; the curing part is installed on the sliding frame, the UV light source can conduct illumination curing on glue at the communicating hole after glue injection is completed at the glue spraying opening and the glue spraying opening is moved away, compared with the prior art, the consistency of glue layer morphology and the repeatability between batches can be remarkably improved, and meanwhile the equipment cost and the outage rate are effectively reduced.