759 results about "Contact region" patented technology

The invention provides a method for automatically measuring the thickness of an oxide layer on the surface of an aluminum profile, and the method comprises the steps: scanning a hanging tool contact region on the surface of the aluminum profile, obtaining an aluminum profile surface image, carrying out the edge contour recognition of the aluminum profile surface image, determining the coordinate position of a hanging tool contact point, and obtaining a contact point region range; dynamically adjusting a measurement probe avoidance path according to the boundary coordinates of the uncertain measurement area, generating a measurement track bypassing the uncertain measurement area, and determining a compensation measurement point position sequence according to the boundary of the effective measurement area and the uncertain measurement area; the measuring probe is guided to execute thickness scanning in the effective measuring area through the compensation measuring point position sequence, the oxide layer thickness value of each measuring point is obtained through scanning, and an oxide layer thickness data set is formed; and generating a final oxide layer thickness evaluation report according to the corrected thickness value and the effective measurement area range, and fusing the boundary coordinates of the uncertain measurement area and the oxide layer thickness distribution characteristics to determine the surface oxide layer thickness of the aluminum profile.

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

The invention relates to a plug connector component (7) for a multi-part plug connector (8), having - a connection interface (10) for connecting to at least one other compatible plug connector component (9) of the multi-part plug connector (8); - a primary contact region (15) for forming at least part of a primary plug interface (16) for connecting to a corresponding mating plug connector (3, 3') of the multi-part plug connector (8); - a connection region (13) for connecting at least one electrical conductor (6); and - at least one electrical contact element (11), which can be connected to the electrical conductor (6) in the connection region (13) and which extends from the connection region (13) at least into the connection interface (10), the electrical contact element (11) being connectable to a compatible electrical contact element (12) of the compatible plug connector component (9) in the connection interface (10).

The invention discloses a semiconductor device which comprises a cellular structure, and the cellular structure comprises an N + substrate, an N-drift layer and a functional area. The N-drift layer is located on the N + substrate; the functional region is embedded into one side, away from the N + substrate, of the N-drift layer, the functional region comprises two subunits and a second N + source region, and each subunit comprises a P + contact region, a P-type body region, a first N + source region and a first trench gate structure; the first N + source region is located on the P-type body region, the first groove is located between the P-type body region and the P + contact region, the first gate oxide layer covers the inner wall of the first groove, a first filling groove is formed in the inner wall of the first gate oxide layer, the first gate is filled in the first filling groove, and the P + shielding region of the P + contact region covers the bottom of the first gate oxide layer; and a second N + source region is arranged between the first trench gate structures of the two subunits. According to the device, the effective utilization rate of a channel can be improved, the specific on-resistance is further reduced, and the problem of long reverse recovery time is solved.

The invention relates to the technical field of program control, in particular to a reamer machining path intelligent optimization method and system based on artificial intelligence, and the method comprises the following steps: collecting a reamer main shaft load torque and a Z-axis feed current in the process that a reamer cuts into a workpiece, and generating a reaming contact area resistance characterization quantity; and mapping the resistance characterization quantity of the reaming contact area to generate a hardness distribution characteristic value of the workpiece material. According to the method, differential operation is carried out on a generated nonlinear track, the acceleration change rate of the nonlinear track is extracted, the dynamic complexity of a motion state is quantitatively evaluated, the dynamic complexity is combined with a contour error predicted by AI, a dynamically weighted feed-forward compensation amount is formed, and when a motion instruction is complex and the system following capability faces challenges, the compensation effect is enhanced; according to the predictive compensation mechanism, active suppression can be carried out before the servo error actually occurs, and the contour tracking precision of a complex nonlinear instruction is improved.

The invention relates to the technical field of digital twinning, and discloses a cultural relic virtual restoration simulation method and system based on digital twinning. The method comprises the following steps: constructing a cultural relic digital twinborn body fusing geometric morphology and physical attributes; collision contact between the virtual tool and the model is detected in real time; calculating stress, deformation and counter-acting force of the contact area through real-time finite element analysis; the reactive force is decomposed into joint torque and high-frequency vibration signals of multi-degree-of-freedom force feedback equipment, and force tactile feedback dynamically matched with material characteristics is provided; and physical parameters and geometric morphology of the model are updated according to the stress overrun condition, so that visual simulation of damage accumulation and fracture is realized. The system comprises a digital twinning construction module, a user interaction interface module, a physical simulation engine module, a force feedback rendering module and a model state updating module. Through a high-frequency closed-loop physical-force sense coupling mechanism, the authenticity, immersion and training reliability of virtual repair are improved.

The invention discloses a uniformity removal trajectory planning method and system suitable for flexible grinding and polishing machining, and the method comprises the steps: S100, building a material removal depth model and a material removal profile at a grinding and polishing point after a flexible grinding and polishing contact wheel is in contact with a workpiece according to the contact pressure in a flexible grinding and polishing profile contact region; s200, correcting the material removal depth model by considering the variable quantity of the chord height error caused by the compliant contact deformation to obtain a corrected material removal depth model; and S300, based on the corrected material removal depth model, the material removal profile is fused into the corrected material removal depth model to realize uniformity removal trajectory planning considering material removal characteristics, and a processing trajectory sequence containing attitude information is obtained. According to the method, equal chord height error step length calculation of contact deformation and equal residual height line spacing calculation of uniform material removal are considered, so that uniform removal trajectory planning of smooth grinding and polishing is realized, and the problem of trajectory discontinuity caused by elastic deformation is remarkably reduced.

The invention relates to a method for manufacturing a bipolar plate (10, 51) for an electrochemical cell unit (53) for converting electrochemical energy into electrical energy as a fuel cell unit (1) and / or for converting electrical energy into electrochemical energy as an electrolytic cell unit (49) having stacked electrochemical cells (52), the method comprising the steps of: providing a first plate 64) and a second plate (65), stacking the first plate (64) and the second plate (65) on top of one another such that inner surfaces (66) of the first and second plate (64, 65) lie on top of one another, applying contact forces to the first and second plates (64, 65) by means of negative pressure in a negative pressure chamber (104) relative to an ambient pressure so that, as a result of the contact forces applied by the ambient pressure, the inner surfaces (66) of the first and second plate (64, 65) lie on top of one another with an additional compression force in a contact region (68) due to the applied contact forces, producing at least one welded joint (69) between the first and second plate (64, 65) by means of a laser beam (74), forming connection channels (89) for process fluids in the first and / or second plate (64, 65), the channels opening into fluid openings (41) in the bipolar plates (10), 51) and into channels (12, 13, 14) for process fluids in the bipolar plates (10, 51), forming connection openings (93) in the first and / or second plate (64, 65) which connect the connection channels (89) to the channels (12, 13, 14) for process fluids in the bipolar plates (10, 51), the connection openings (93) being formed in the first and / or second plate (64, 65) by means of a laser beam (74).

The invention provides a robot and a grabbing control method thereof, and the method comprises the steps: extracting a contour feature point set of a target object, converting the contact pressure distribution data of the robot during the current grabbing of the target object into a contact state matrix, and recognizing a stable contact region and a potential sliding region based on the contour feature point set and the contact state matrix; further determining a stress mapping matrix of the target object in the grabbing process, and determining the stability margin of the target object grabbed by the robot through the stress mapping matrix; based on the stability margin, a dynamic coupling coefficient of interaction between the dexterous finger of the robot and the target object is determined, and according to the dynamic coupling coefficient, the self-adaptive adjustment requirement of the current grabbing state of the robot is judged; and dynamically adjusting the grabbing force closed-loop control parameters when the robot dexterous finger executes the grabbing action according to the self-adaptive adjustment requirement. By the adoption of the scheme, self-adaptive grabbing force control based on contact state prediction can be achieved, so that the grabbing performance of the robot in the complex object grabbing process is improved.

A metal-ceramic substrate and an electronic component comprising a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body, in a planar manner, the metal layer having a structuring region which comprises: (i) solid material in some areas and (ii) non-solid material in some areas, and c) a contact region comprising silver arranged on the metal layer, wherein, in a cross section through the metal-ceramic substrate perpendicular to the main extension plane, the structuring region has a geometry in which the following requirement is met:A⁡(BCDsolid) / A⁡(BCDtotal)>70⁢%,wherein A (BCDtotal) represents the total area of the triangle described by the points B, C and D, and A (BCDsolid) represents the area of the triangle described by the points B, C and D which is occupied by solid material.

The invention relates to a laser arrangement comprising at least two edge-emitting laser ridges, each with an integrated active zone and an output coupling plane. The at least two edge-emitting laser ridges are spatially separated from one another and share a common, and in particular a single-piece, semiconductor layer sequence with a contact region. Each ridge has a contact terminal, particularly on a surface, for supplying charge carriers to the active zone. A support substrate with at least one contact region is electrically coupled and mechanically connected to the contact region of the common semiconductor layer sequence. Furthermore, a heating element is provided, which is applied to a surface consisting of one of the common semiconductor layer sequences and the support substrate, and comprises two contact terminals and a meandering conductor between the two contact terminals.

There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The semiconductor memory device includes a conductive gate contact penetrating a contact region of a stepped stack structure including a plurality of interlayer insulating layers and a plurality of conductive patterns, which are alternately stacked.

The invention relates to a metal-ceramic substrate, to an electronic component comprising a metal-ceramic substrate, and to a method for producing a metal-ceramic substrate. The metal-ceramic substrate comprises: a) a ceramic body which has a main extension plane, b) a metal layer which is connected to the ceramic body in a planar manner, the metal layer having a structuring region which comprises (i) partially solid material and (ii) partially non-solid material, and c) a contact area which is arranged on the metal layer and comprises silver, the structuring region having a geometry in a cross-section through the metal-ceramic substrate perpendicular to the main extension plane, the following requirement being met: S(BCsolid) / S(BCtotal)>60%, wherein: S(BCtotal) represents the total length of the line between points B and C, and S(BCsolid) represents the length of the line between points B and C that intersects the solid material.

Method for testing the tightness of a sealing device (54) of a flow chamber component (40) for an electrochemical cell system (11) comprising the steps of: providing a test fluid in a flow chamber (41) of the flow chamber component (40) for the electrochemical cell system (11), wherein the flow chamber component (40) for the electrochemical cell system (11) comprises the sealing device (54) for sealing the flow chamber (41) for the process fluid by having a first component (43) directly or indirectly rest on a second component (44) at a contact area (47), such that the sealing device (54) is formed between the first component (43) and the second component (44) due to the direct or indirect contact between the first component (43) and the second component (44) at the contact area (47); arranging a detection device (50) for the test fluid in a space outside the flow chamber (41).Detect the test fluid flowing from the flow chamber (41) through the sealing device (54) as leakage fluid with the detection device (50), wherein the leakage fluid is directed into a collection chamber (57) bounded by the flow chamber component (40) itself after flowing through the sealing device (54) and the leakage fluid directed into the collection chamber (57) is detected with the detection device (50).

The invention relates to the technical field of Hall sensors, and provides a Hall element with a triple isolation structure and a preparation method thereof.The Hall element comprises two pairs of Hall contact areas participating in electrical connection and oxide isolation structures located on the two sides of the Hall contact areas and having a certain gap distance. The oxide buried layer completely isolates the Hall plate area in the vertical direction, the Hall plate is completely isolated from the outside through the isolation structure and the oxide buried layer, external direct current interference is reduced to the maximum extent, meanwhile, the thickness and the current path of the Hall plate are controlled, and the effect of reducing noise interference while the sensitivity is improved is achieved. A three-circle surrounding structure is formed by utilizing a P well in contact with the side face of a Hall plate, a PBL in contact with the vertical bottom of an oxide buried layer and connected with the P well on the side face of the Hall plate, an NBL tightly attached to the lower surface of the PBL, an N well connected with the NBL and surrounding the Hall plate and the P well, and a P well connected with a substrate and surrounding the outermost layer, and Hall voltage changes caused by substrate noise and EMI electromagnetic interference are prevented.

A power semiconductor device is provided. The power semiconductor device mainly comprises a first conductive-type highly-doped substrate and a second conductive-type contact region formed thereon. The contact region has a dual-layer doping structure comprising a highly-doped region and a lightly-doped region. Accordingly, the active area of the power device has a five-layer structure of a second conductive-type highly-doped region, a second conductive-type lightly-doped region, an intrinsic semiconductor epitaxial layer, a first conductive-type lightly-doped layer, and a first conductive-type highly-doped substrate, for improving the breakdown voltage of the power device. In addition, metal silicide layers are introduced on the front and back sides of the device and form ohmic contacts with the metal layers thereof to shorten the reverse recovery time (trr) of the device. The metal electrode on the front of the device has a plurality of ring-shaped designs, including at least one second conductive-type metal ring and one first conductive-type metal ring.

The invention relates to a vehicle comprising a floor (1), one face of the floor (1) being divided into several modules for receiving electric batteries (5), at least one non-continuous sealing bead on either side of longitudinal members (7) fixed to the floor (1), at least one inflatable insert (8) being placed in a contact zone between each edge of the floor (1) and the longitudinal members (7), at the points where the sealing bead is interrupted. Each inflatable insert (8) extends only between the edge of the floor (1) and a portion (11) of the longitudinal member (7) with which it is in contact, and at least one sealing gasket (14) is positioned on a portion (12) of the edge of the floor (1), the sealing gasket (14) and the inflatable insert (8) together forming a continuous sealing bead. Figure to be published with the abbreviation: Fig. 8

The invention relates to the technical field of intelligent protection, and discloses a metal plate stamping anti-collision system based on force feedback, which comprises a data acquisition module, a data processing module, a feature extraction module, a collision risk prediction module, a dynamic anti-collision control module and a real-time anti-collision intervention module, force signal data in the stamping process is obtained; performing noise cleaning on the force signal data to obtain a clean force signal in the stamping process; extracting a time domain feature and a frequency domain feature in the clean power signal to obtain a time domain feature vector and a frequency domain feature vector in the stamping process; performing collision risk prediction on the stamping process based on the time domain feature vector and the frequency domain feature vector to obtain a collision risk level of the stamping process; dynamically generating an anti-collision control instruction of the stamping equipment according to the collision risk grade; the stamping process is intervened in real time based on the anti-collision control instruction; according to the invention, the efficiency of production operation, quality control, mold maintenance and automation level can be improved.

The invention provides a semiconductor device and a preparation method thereof. The semiconductor device includes a substrate, a channel layer, a barrier layer, a source, and a drain. The channel layer is located on one side of the substrate; the barrier layer is located on the side, away from the substrate, of the channel layer, the barrier layer comprises a first surface deviating from the channel layer, the first surface comprises ohmic contact areas, and the ohmic contact areas comprise at least one first ohmic contact area and at least one second ohmic contact area; the surface of the same ohmic contact area comprises a first sub-surface and a second sub-surface, and the second sub-surface is located on at least one side of the first sub-surface; in the first ohmic contact area and the second ohmic contact area which are adjacent, the second sub-surface of the first ohmic contact area at least comprises a first sub-area which is located on the side, facing the second ohmic contact area, of the first sub-surface, and at least part of the first sub-area of the first ohmic contact area is sunken relative to the first sub-surface of the first ohmic contact area. The current conduction efficiency of the semiconductor device can be improved.

Coaxial interconnects formed by additive manufacturing. In one example, a method of electrically connecting an integrated circuit chip to an off-chip radio frequency (RF) waveguide includes providing an integration substrate having the integrated circuit chip and the RF waveguide mounted thereon, and printing, using an additive manufacturing apparatus, a coaxial interconnect extending between a plurality of first metal contact regions on the integrated circuit chip and a plurality of second metal contact regions on the RF waveguide, the coaxial interconnect including a metal core and a metal shield at least partially surrounding the metal core and arranged to be coaxial with the metal core.

The disclosure relates to a semiconductor chip (100) comprising: a semiconductor body (10), an insulating layer (20) and a metallization (30), wherein a conductor track (31) is formed in the metallization (30) and is arranged outside an active region (101) of the semiconductor chip (100), wherein a first contact opening (21) is formed in the insulating layer (20) under the conductor track (31), wherein the conductor track (31) is electrically connected to the semiconductor body (10) in a first contact area (41) in the first contact opening (21), the first contact opening (21) is subdivided along a longitudinal extent (110) of the conductor track (31) into a plurality of first contact opening sections (21.1-21.3), wherein the first contact area (41) is provided with a respective first interruption (51, 51.1, 51.2) between adjacent first contact opening sections (21.1-21.3).

The utility model provides a photovoltaic module ground -connection frame with puncture function relates to photovoltaic support technical field, including frame and puncture subassembly. This photovoltaic module ground -connection frame with puncture function fixes puncture subassembly in the side of frame, makes the sharp of moving plate aim at the contact area of photovoltaic support, ensures that the sharp and support surface preliminary contact. Spring exerts the thrust along the spring axis direction to moving plate because of precompression state, and the sharp punctures the oxide film on the surface of support and contacts with aluminium alloy base material along the vertical groove of outer frame and is pushed to the support direction sliding, and forms the conductive path. With the lapse of time, the aluminium alloy base material of support contact point reacts with air, and when the oxide film is regenerated, the moving plate is manually pushed to slide, the sharp cuts the newly generated oxide film again, maintains the conductive state of contact point, avoids the contact interruption, realizes the continuous puncture of oxide film, ensures that the ground -connection path is long -term stable.

The invention relates to a cooling arrangement (1) with at least one busbar (2, 3) or with two busbars (2, 3), which are used in particular as electrical supply lines (8, 9) in an electrically powered motor vehicle, wherein the at least one busbar (2, 3) has a substantially flat contact area (4) on which at least one Peltier element (5) is arranged, wherein the respective Peltier element (5) has a first side (6) and an opposing second side (7) and two electrical supply lines (8, 9) to the Peltier element (5), wherein the first side (6) is arranged in contact with the busbar (2, 3), wherein a cooling element (10) is provided which is arranged such that the second side (7) of the Peltier element (5) is arranged in contact with the cooling element (10).

A vertical III-V Hall sensor, which has a substrate layer with an upper side and an underside, and a first insulating layer formed on the substrate layer, and a III-V semiconductor layer formed on the insulating layer, and a second insulating layer formed on the III-V semiconductor layer, the second insulating layer being structured and having at least three openings designed as contact regions, and the III-V semiconductor layer having a length formed in the X direction and a width formed in the Y direction, and the at least three contact regions being arranged along a straight line, and the III-V semiconductor layer having an n doping, and the III-V semiconductor layer having a peripheral insulation.

According to various embodiments, an electronic component comprises: a housing including a synthetic resin injection part and a first metal member; a second metal member supported by the housing and including a first portion that is thermally bonded to at least a portion of the first metal member and a second portion that is electrically connected to the first portion; and at least one bonding portion in which at least a portion of the first metal member and at least a portion of the first portion of the second metal member are thermally bonded, wherein the synthetic resin that forms the synthetic resin injection part includes plant-derived polyamide and semi-aromatic polyamide, and the synthetic resin injection part may include at least one contact area in contact with the at least one bonding portion. Various other embodiments may be possible.

A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes a drift region being a first-conductivity type, a body region being a second-conductivity type and provided on the drift region, a source region being the first-conductivity type and provided on the body region such that the source region is separated from the drift region, a contact region being the second-conductivity type and provided on the body region. Gate trenches are provided in the first main surface, and extend in a first direction parallel to the first main surface. The contact region is in contact with a first gate trench from both sides in a second direction orthogonal to the first direction and spaced apart from a second gate trench adjacent to the first gate trench in the second direction.

The invention relates to an interface element (1) for electrically contacting an electrically conductive structure (2), wherein the electrically conductive structure (2) is arranged substantially in a main body (3) made of a polymer material of a multi-layer composite body (4), wherein the interface element (1) has a contacting element (5), wherein the electrically conductive structure (2) can be electrically conductively connected to the end of the contacting element (5) in a contacting region. The interface element (1) has at least one sealing element (6) for protecting the contacting region from the effect of external chemical and / or physical influences.

Semiconductor device package assemblies and associated methods are disclosed herein. In some embodiments, the semiconductor device package assembly includes (1) a base component having a front side and a back side opposite the first side, the base component having a first metallization structure at the front side, the first metallization structure being exposed in a contacting area at the front side; (2) a semiconductor device package having a first side and a second side, the semiconductor device package having a second metallization structure at the first side; and (3) a metal bump at least partially positioned in the recess and electrically coupled to the second metallization structure and the first metallization structure.

A three-dimensional source contact structure and fabrication process method thereof are provided. A lithography process and shallow trench process are sequentially performed to form a metal contact window in a power device. A source heavily doped area is divided by the metal contact window into a first and second heavily doped region. A lateral etching process is applied to an inter-layer dielectric to form a first and a second dielectric layer, each of which is in a trapezoid shape. Meanwhile, a first and a second metal-source surface contact regions are exposed. A longitudinal surface exposed by the shallow trench process is beneficial to increase vertical contact when depositing a source contact metal, thereby a step-like three-dimensional source contact structure can be formed. The present invention achieves in reducing cell pitch effectively and can be widely applied to various power devices having MOSFET structure thereof.