1734 results about "Contact region" patented technology

The invention relates to the technical field of semiconductor manufacturing, in particular to an accurate detection method and system for a flat-edge sheet wafer placement rotary chuck, and the method comprises the steps: when a wafer is placed on the rotary chuck, scanning the lap joint condition of a wafer edge and a chuck contact area through a laser sensor, and obtaining the real-time distribution data of an edge lap joint sheet; flat edge position information is extracted from the edge lap joint distribution data, an image matching algorithm is adopted to compare a preset orientation reference, and a specific angle value of orientation deviation is determined; according to the orientation deviation angle value and the edge lapping piece distribution data, the rotating speed and the angle of the rotating chuck are adjusted through a cooperative control algorithm, and a final positioning result of the wafer on the chuck is obtained; after a final positioning result is obtained, the in-place state of the wafer is classified and judged through a deep learning model, and whether the residual deviation or wafer lapping phenomenon exists or not is determined; and extracting abnormal data from a classification judgment result, and adjusting collaborative parameters of carrying and placing according to the abnormal data to obtain an optimized process control scheme.

The invention provides a full-focusing ultrasonic imaging method for multi-modal damage of a composite material, and the method comprises the steps: calculating the correlation of the reflection intensity of a sound wave signal at different moments and spatial positions through employing an established quantitative corresponding relation, recognizing a close contact region and a loose separation region between a bonding layer and a substrate, and carrying out the recognition of the close contact region and the loose separation region. Judging the continuity distribution condition of the interface contact state; according to the continuous distribution condition of the interface contact state, key feature points of dynamic damage evolution are extracted, a time sequence analysis method is adopted to track the feature points to adapt to damage features of dynamic changes, and prediction data of the damage expansion trend are obtained; and according to the dynamic representation result of the interface state, fusing the obtained multi-period signal characteristic data, carrying out quantitative calculation on the area change of the debonding region, judging the residual distribution state of the bonding strength, and obtaining a comprehensive evaluation report of the damage degree of the bonding interface.

The invention provides a grid-controlled junction field effect transistor, which comprises a substrate and an epitaxial layer formed on the substrate, the channel region of the second doping type is formed downwards from the top surface of the epitaxial layer; the second doping type source electrode contact region is formed downwards from the top surface of the epitaxial layer and is connected to the outer edge of the channel region; the grid electrode of the first doping type is formed on the channel region in the vertical direction, and the outer edge of the grid electrode is located in the outer edge of the channel region in the transverse direction, so that a preset distance is kept between the grid electrode and the source electrode contact region of the second doping type in the transverse direction; and the well region is positioned below the second doping type source contact region. According to the invention, the technical problem that the input capacitance and grid leakage of a traditional grid-controlled junction field effect transistor are relatively large is solved.

The invention provides a method for automatically measuring the thickness of an oxide layer on the surface of an aluminum profile, and the method comprises the steps: scanning a hanging tool contact region on the surface of the aluminum profile, obtaining an aluminum profile surface image, carrying out the edge contour recognition of the aluminum profile surface image, determining the coordinate position of a hanging tool contact point, and obtaining a contact point region range; dynamically adjusting a measurement probe avoidance path according to the boundary coordinates of the uncertain measurement area, generating a measurement track bypassing the uncertain measurement area, and determining a compensation measurement point position sequence according to the boundary of the effective measurement area and the uncertain measurement area; the measuring probe is guided to execute thickness scanning in the effective measuring area through the compensation measuring point position sequence, the oxide layer thickness value of each measuring point is obtained through scanning, and an oxide layer thickness data set is formed; and generating a final oxide layer thickness evaluation report according to the corrected thickness value and the effective measurement area range, and fusing the boundary coordinates of the uncertain measurement area and the oxide layer thickness distribution characteristics to determine the surface oxide layer thickness of the aluminum profile.

The invention relates to a cooling device for cooling an electrical and / or electronic assembly (2), said cooling device comprising: a top plate (3) and a bottom plate (4), the bottom plate (4) being a deep-drawn component having a depression (40), the top plate (3) and the bottom plate (4) being arranged such that, due to the depression (40) a cooling channel (5) is formed between the top plate (3) and the bottom plate (4), the top plate (3) and the bottom plate (4) being connected to one another at a contact region (8) outside the depression (40), it being possible for a cooling fluid flow of a cooling fluid to flow through the cooling channel (5) along the longitudinal direction (11), the cooling device (1) also comprising at least one turbulator (6) that is arranged inside a turbulator section (56) of the cooling channel (5). According to the invention, a turbulence portion (61) for generating local turbulence in the flow of the cooling fluid and a blocking region (62) for locally blocking the flow of the cooling fluid are formed on the turbulator (6).

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

This application discloses an optical module housing and a manufacturing method thereof, an optical module, and an optical communication device. The optical module housing includes a housing body and a plating layer, where the plating layer is located on a surface of the housing body, a roughness Ra of the plating layer at least in a contact area does not exceed 0.6 μm, and the contact area is an area that is of the optical module housing and that is configured to be in contact with a heat sink. According to this application, the roughness Ra of the plating layer in the contact area is set not to exceed 0.6 μm, so that when the optical module is connected to an optical module connector, a gap between the contact area of the optical module housing and the heat sink is smaller.

An example of a controller according to an exemplary embodiment includes a housing including an opening, an input device including a movable member penetrating through the opening in a first direction to inside of the housing, and a contact area that is provided inside the housing. The movable member is configured to be able to be pressed and tilted relative to an axis in the first direction. When the movable member is tilted, the movable member comes into contact with the contact area and is restricted from being further tilted. The contact area is inclined to face the movable member relative to a plane perpendicular to the axis in the first direction.

The invention relates to the technical field of semiconductors, in particular to a source heterojunction contact semiconductor structure and device and a manufacturing method, the semiconductor structure comprises a gate structure, a body region structure, a source structure and a drain structure, and the source structure comprises a polycrystalline silicon source contact layer; the semiconductor structure comprises a body region structure and a polycrystalline silicon source contact layer, the body region structure is surrounded by the gate structure, a source contact region is arranged in the body region structure, the polycrystalline silicon source contact layer is in contact with the source structure through the source contact region so as to form a heterojunction diode with the source structure, and the heterojunction diode is a freewheeling diode of the semiconductor structure. The drain electrode structure is located on one side, back to the gate electrode structure, of the body region structure; the semiconductor structure can be a SiC MOSFET structure, reverse conduction voltage drop during follow current of the SiC MOSFET can be greatly reduced, and conduction loss and loss caused during switching are reduced.

Pixel circuits may be symmetrically arranged with respect to a boundary between neighboring pixels. Neighboring pixels may have pixel circuits which are symmetric to each other and may share at least one transistor and at least one contact area. Accordingly, a high-resolution display apparatus is provided which may be implemented by increasing integration efficiency of a pixel circuit and increasing pixel density.

The invention discloses a semiconductor device and a manufacturing method thereof, and electronic equipment, and belongs to the technical field of semiconductors, and the semiconductor device comprises a plurality of layers of storage units which are stacked in the direction perpendicular to a substrate; the memory cell includes: a transistor; the transistor comprises a grid electrode extending in the direction perpendicular to a substrate, a semiconductor layer surrounding the side wall of the grid electrode, and a transition layer surrounding the side wall of the semiconductor layer and making contact with the semiconductor layer. Wherein the transition layer comprises two conductive contact areas which are isolated from each other, and two insulating areas which are positioned between the two conductive contact areas.

The present invention relates to a contact (70) for a flat plug connector (50), and a flat plug connector (50) for a flat plug connector system (1), wherein the flat plug connector (50) has at least one contact (70) according to the contact (70) for a flat plug connector, andwherein the contact (70) has a terminal portion (71) for electrically conductive connection to an electronic component;wherein the contact (70) has a retaining portion (73) for fixing in a plug connector housing (51);wherein the contact (70) has a contact portion for electrically conductively contacting a complementary contact (34),wherein the contact portion is connected to the retaining portion (73) by means of a bent portion (74) of the contact (70),wherein the contact portion has a bent contact region (76) for electrically conductively contacting a complementary contact (34),wherein the contact portion has a first portion (75) which is arranged between the bent contact region (76) and the retaining portion (73), wherein the first portion (75) and the retaining portion (73) enclose an acute angle, andwherein the contact portion has a second portion (77) which is arranged opposite the first portion (75) relative to the bent contact region (76), and wherein the second portion (77) has a support portion (78) which is configured to be supported at the retaining portion (73) by the support portion (78) upon deflection of the contact portion towards the retaining portion (73).

The invention relates to an indirect rear viewing system for a motor vehicle having a supporting element for fastening at least one reflective element, wherein the supporting element has a coupling region for a position variable fastening / attachment to an adjusting element, which in turn can be attached to the vehicle, wherein the coupling region contacts a counter contact regions, of the adjusting element, wherein interlocking anti rotation means are present on the supporting element and on the adjusting element, wherein the anti rotation means are forming an index geometry, which, in a first operating state, permits an adjustment of the supporting element relative to the adjusting element about two axes of rotation, which are transverse to one another, and, in at least a second operating state, permits a basic position change of the supporting element relative to the adjusting element about a third axis of rotation which is aligned transversely to the two other axes of rotation.

The invention relates to a plug connector component (7) for a multi-part plug connector (8), having - a connection interface (10) for connecting to at least one other compatible plug connector component (9) of the multi-part plug connector (8); - a primary contact region (15) for forming at least part of a primary plug interface (16) for connecting to a corresponding mating plug connector (3, 3') of the multi-part plug connector (8); - a connection region (13) for connecting at least one electrical conductor (6); and - at least one electrical contact element (11), which can be connected to the electrical conductor (6) in the connection region (13) and which extends from the connection region (13) at least into the connection interface (10), the electrical contact element (11) being connectable to a compatible electrical contact element (12) of the compatible plug connector component (9) in the connection interface (10).

The invention relates to a cooling device for cooling an electrical and / or electronic assembly (2), said cooling device comprising: a top plate (3) and a bottom plate (4), the bottom plate (4) being a deep-drawn component comprising a depression (40), the top plate (3) and the bottom plate (4) being arranged such that, due to the depression (40), a cooling channel (5) is formed between the top plate (3) and the bottom plate (4), the top plate (3) and the bottom plate (4) being connected to one another at a contact region (8) outside the depression (40), it being possible for a cooling fluid flow of a cooling fluid to flow through the cooling channel (5), the cooling device (1) further comprising at least one turbulator (6) arranged inside the depression (40) of the cooling channel (5), the turbulator (6) adjoining a bottom surface (44) in the depression (40) of the bottom plate (4) and the bottom surface (44) facing the top plate (3). According to the invention, the bottom plate (4) comprises an embossment (7) in a bending region (43) on the edge of the bottom surface (44).

The invention discloses a semiconductor device which comprises a cellular structure, and the cellular structure comprises an N + substrate, an N-drift layer and a functional area. The N-drift layer is located on the N + substrate; the functional region is embedded into one side, away from the N + substrate, of the N-drift layer, the functional region comprises two subunits and a second N + source region, and each subunit comprises a P + contact region, a P-type body region, a first N + source region and a first trench gate structure; the first N + source region is located on the P-type body region, the first groove is located between the P-type body region and the P + contact region, the first gate oxide layer covers the inner wall of the first groove, a first filling groove is formed in the inner wall of the first gate oxide layer, the first gate is filled in the first filling groove, and the P + shielding region of the P + contact region covers the bottom of the first gate oxide layer; and a second N + source region is arranged between the first trench gate structures of the two subunits. According to the device, the effective utilization rate of a channel can be improved, the specific on-resistance is further reduced, and the problem of long reverse recovery time is solved.

A two-dimensional semiconductor is configured for contacting two metals and includes a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer includes a channel region and two metal contacting regions. The two metal contacting regions are connected to two sides of the channel region, respectively. A plurality of heterojunctions having type-II band alignment are formed by the second semiconductor layers and the two metal contacting regions of the first semiconductor layer, respectively, and the heterojunctions are arranged and spaced away from each other.

The invention discloses a power device with a drain electrode led out from the front side and a manufacturing method thereof, the power device comprises a substrate, an epitaxial layer and an isolation layer, and the power device is divided into a gate contact region, an active region, a terminal region and a terminal peripheral region along the horizontal direction; gate metal is arranged on the isolation layer of the gate contact region and is connected with the gate interconnection structure; source electrode metal is arranged on the isolation layer of the active region and is connected with the source region; the terminal region is provided with a voltage-withstanding ring and a cut-off ring structure, the isolation layer of the terminal peripheral region is provided with drain electrode metal, and the drain electrode metal is connected with the first injection region of the terminal peripheral region. According to the invention, the drain electrode metal of the power device is changed into the terminal peripheral area arranged on the front surface of the power device, so that the source electrode metal, the drain electrode metal and the grid electrode metal of the power device are all located on the same plane, the demand of clip materials can be effectively reduced, the performance of the power device can be improved, and the parasitic effect can be reduced.

The invention relates to the technical field of program control, in particular to a reamer machining path intelligent optimization method and system based on artificial intelligence, and the method comprises the following steps: collecting a reamer main shaft load torque and a Z-axis feed current in the process that a reamer cuts into a workpiece, and generating a reaming contact area resistance characterization quantity; and mapping the resistance characterization quantity of the reaming contact area to generate a hardness distribution characteristic value of the workpiece material. According to the method, differential operation is carried out on a generated nonlinear track, the acceleration change rate of the nonlinear track is extracted, the dynamic complexity of a motion state is quantitatively evaluated, the dynamic complexity is combined with a contour error predicted by AI, a dynamically weighted feed-forward compensation amount is formed, and when a motion instruction is complex and the system following capability faces challenges, the compensation effect is enhanced; according to the predictive compensation mechanism, active suppression can be carried out before the servo error actually occurs, and the contour tracking precision of a complex nonlinear instruction is improved.

A transistor, a 3D memory and a manufacturing method therefor, and an electronic device are provided in the present application. The 3D memory includes a plurality of layers of memory cells stacked in a direction perpendicular to a substrate, and a word line. A memory cell includes a transistor which includes a source and a drain, a gate extending in the direction perpendicular to the substrate, a semiconductor layer surrounding a sidewall of the gate. The semiconductor layer includes a source contact region and a drain contact region arranged at intervals. A channel between the source contact region and the drain contact region is a horizontal channel, and the word line extends in the direction perpendicular to the substrate and penetrates through the memory cells of different layers.

The invention discloses a method for metalizing a wafer-level glass through hole, which comprises the following steps of: providing a glass wafer which is provided with a micro through hole; a carrier wafer is provided, the size of the carrier wafer is 12 inches, and the size of the carrier wafer is larger than that of the glass wafer; sputtering a seed layer on the first surface of the carrier wafer, wherein the material of the seed layer is Ti / Cu; temporarily bonding the glass wafer and the seed layer on the first surface of the carrier wafer, and forming a PIN contact area at the edge of the seed layer; a single-face electroplating process is carried out on the glass wafer, so that the micro through hole is metalized, and the electroplating PIN realizes current transmission through a PIN contact area; and de-bonding, and removing the carrier wafer and the seed layer to obtain the glass wafer filled with the micro-through-hole metallization. According to the method, the technological process and technical difficulty of TGV through hole metallization are simplified, micro through hole metallization can be achieved through single-face electroplating, and the effects of saving cost and improving efficiency are achieved to a great extent.

The invention relates to the technical field of digital twinning, and discloses a cultural relic virtual restoration simulation method and system based on digital twinning. The method comprises the following steps: constructing a cultural relic digital twinborn body fusing geometric morphology and physical attributes; collision contact between the virtual tool and the model is detected in real time; calculating stress, deformation and counter-acting force of the contact area through real-time finite element analysis; the reactive force is decomposed into joint torque and high-frequency vibration signals of multi-degree-of-freedom force feedback equipment, and force tactile feedback dynamically matched with material characteristics is provided; and physical parameters and geometric morphology of the model are updated according to the stress overrun condition, so that visual simulation of damage accumulation and fracture is realized. The system comprises a digital twinning construction module, a user interaction interface module, a physical simulation engine module, a force feedback rendering module and a model state updating module. Through a high-frequency closed-loop physical-force sense coupling mechanism, the authenticity, immersion and training reliability of virtual repair are improved.

The invention provides a power device and a preparation method thereof. The preparation method comprises the following steps: forming a P-type layer and an N-type layer on an N-type substrate; forming a groove; performing ion implantation to form an N-type source region; forming a gate oxide layer in the groove; forming a first polycrystalline silicon layer, a thick oxide layer and a second polycrystalline silicon layer in the groove; depositing a dielectric layer; forming a source contact region, wherein the source contact region exposes a part of the N-type source region and a part of the P-type layer; forming an insulating layer; forming a gate contact region, wherein the gate contact region extends into the first polycrystalline silicon layer; forming a drain contact region, wherein the N-type layer is exposed out of the drain contact region; and forming a source electrode, a grid electrode and a drain electrode, wherein the source electrode is simultaneously contacted with the N-type source region and the P-type epitaxial layer. According to the invention, the source electrode, the grid electrode and the drain electrode can be attached to the heat dissipation substrate at the same time, so that the heat dissipation path is greatly optimized, and the access inductance of the source electrode is reduced; the connection of the P-type layer and the N-type source region is formed in the device through the groove, so that the process can be effectively simplified, an additional lead-out process is avoided, and the manufacturing cost is effectively saved.

Disclosed is a method and IC, comprising: a p-type substrate layer (410), an ESD protection device (420), and a further region (430); wherein the ESD protection device comprises: a n-well region (422) having therein a n+ contact region (424) and a p+ anode contact region (426), and a trigger device (428) connected between the n+ contact region and a further p+ contact region (446) outside of the n-well, wherein the trigger device is operable, in response to an ESD event trigger, to provide a low-resistance path between the anode contact region and the further p+ contact region; wherein the further region comprises a further n-well (432), spaced apart from the ESD protection device lower-doped n-well region (422); and wherein the further n-well is operable as a cathode of an SCR comprising the anode, and the ESD protection device n-well and the p-doped substrate layer as a n- and p-intermediate nodes.

The invention discloses a uniformity removal trajectory planning method and system suitable for flexible grinding and polishing machining, and the method comprises the steps: S100, building a material removal depth model and a material removal profile at a grinding and polishing point after a flexible grinding and polishing contact wheel is in contact with a workpiece according to the contact pressure in a flexible grinding and polishing profile contact region; s200, correcting the material removal depth model by considering the variable quantity of the chord height error caused by the compliant contact deformation to obtain a corrected material removal depth model; and S300, based on the corrected material removal depth model, the material removal profile is fused into the corrected material removal depth model to realize uniformity removal trajectory planning considering material removal characteristics, and a processing trajectory sequence containing attitude information is obtained. According to the method, equal chord height error step length calculation of contact deformation and equal residual height line spacing calculation of uniform material removal are considered, so that uniform removal trajectory planning of smooth grinding and polishing is realized, and the problem of trajectory discontinuity caused by elastic deformation is remarkably reduced.

The present invention provides a laser cutting device for profile cutting, which belongs to the field of profile laser cutting equipment, including a feed bracket, a cutting bracket fixedly connected to the feed bracket, a material receiving assembly fixedly connected to the cutting bracket, a cutting assembly arranged inside the cutting bracket, and further including: a front clamping assembly, the front clamping assembly arranged below the cutting assembly, the front clamping assembly used to stabilize the position of the rectangular tube and reduce heat transfer; a cleaning assembly arranged inside the front clamping assembly, the cleaning assembly used to keep the surface of the rectangular tube clean; an auxiliary heat dissipation assembly, the auxiliary heat dissipation assembly arranged below the front clamping assembly, the auxiliary heat dissipation assembly used to enhance the heat dissipation effect of the front clamping assembly. This invention effectively suppresses the problem of heat accumulation caused by the continuous action of the laser, prevents local overheating in the contact area between the clamp and the profile, and significantly improves the stability of the clamping system.

The invention relates to a contacting bolt 2 for connection to a conductor track 102, comprising a bolt head 6, a substantially cylindrical bolt body 4 and a contacting region 10 formed in the direction of a longitudinal axis 12 between the bolt body 4 and the bolt head 6 for connection to the conductor track 102 and is characterized in that the bolt head 6, in particular on a side facing away from the contacting region 10, has a first tooth structure 30 with at least one first tooth 32. During assembly of the contacting bolt 2 to a conductor track 102, the contacting area 10 is preferably positively connected to the conductor track 102, wherein the positive connection is formed by plastic deformation of the material of the conductor track 102. The first tooth structure 30 enables a positive connection with an electrical insulator 106 during overmolding of the bolt head 6. Furthermore, a conductor element 100 is proposed in which at least one conductor track 102 is formed and at least one conductor track 102 is connected to a corresponding contacting bolt 2. The contacting bolt 2 improves the absorption of forces and moments in the conductor track 2 or the conductor element 100, so that when a contact means 110 and / or a connecting means 116 is mounted on the contacting bolt 2, the risk of damage to the conductor element 100 is reduced.

The invention relates to a method for manufacturing a bipolar plate (10, 51) for an electrochemical cell unit (53) for converting electrochemical energy into electrical energy as a fuel cell unit (1) and / or for converting electrical energy into electrochemical energy as an electrolytic cell unit (49) having stacked electrochemical cells (52), the method comprising the steps of: providing a first plate 64) and a second plate (65), stacking the first plate (64) and the second plate (65) on top of one another such that inner surfaces (66) of the first and second plate (64, 65) lie on top of one another, applying contact forces to the first and second plates (64, 65) by means of negative pressure in a negative pressure chamber (104) relative to an ambient pressure so that, as a result of the contact forces applied by the ambient pressure, the inner surfaces (66) of the first and second plate (64, 65) lie on top of one another with an additional compression force in a contact region (68) due to the applied contact forces, producing at least one welded joint (69) between the first and second plate (64, 65) by means of a laser beam (74), forming connection channels (89) for process fluids in the first and / or second plate (64, 65), the channels opening into fluid openings (41) in the bipolar plates (10), 51) and into channels (12, 13, 14) for process fluids in the bipolar plates (10, 51), forming connection openings (93) in the first and / or second plate (64, 65) which connect the connection channels (89) to the channels (12, 13, 14) for process fluids in the bipolar plates (10, 51), the connection openings (93) being formed in the first and / or second plate (64, 65) by means of a laser beam (74).