2402 results about "Contact region" patented technology

Temperature-dependent switch (10) comprising: a switch housing (12) with a lower part (16) and a cover part (18) closing the lower part (16);a temperature-dependent switching mechanism (14) which is arranged in the switch housing (12) and has a movable contact part (30), a bimetallic element (26) and a spring element (24) cooperating with the movable contact part (30), wherein the switching mechanism (14) is configured to switch between a low-temperature position, in which it presses the movable contact part (30) against a contact surface (34) arranged inside the switch housing (12) and thereby establishes an electrical connection between a first electrical external terminal (56) of the switch (10) and a second electrical external terminal (58) of the switch (10), and a high-temperature position, in which it keeps the movable contact part (30) spaced away from the contact surface (34) and thereby interrupts the electrical connection between the first electrical external terminal (56) and the second electrical external terminal (58);and a spacer element (44) which is arranged inside the switch housing (12) between the lower part (16) and the cover part (18); wherein at least one section (42) of the spring element (24) is arranged between the spacer element (44) and the switch housing (12) and is fixed in position by an interaction of the spacer element (44) and the switch housing (12), and wherein at least one section (52) of the bimetallic element (26) is arranged between the spring element (24) and the spacer element (44) and is supported on the spacer element (44) in the high-temperature position of the switching mechanism (14).

The invention discloses a method and a system for controlling test lapping of a stamping die. The method comprises the following steps: scanning an actual molded surface of the stamping die to generate actual three-dimensional point cloud data; determining a difference value according to the actual three-dimensional point cloud data and the virtual three-dimensional point cloud data; determining a first to-be-repaired area according to the difference value and a preset tolerance range; simulating deformation conditions of the stamping part under different pressures based on a preset virtual combined simulation model, and predicting a contact area and pressure distribution of the stamping die and the stamping part in an actual stamping process; determining a second to-be-repaired area according to the contact area and the pressure distribution; determining a to-be-polished area according to the first to-be-repaired area and the second to-be-repaired area; a polishing path is generated according to the to-be-polished area through a path planning algorithm; and grinding equipment is controlled to grind the stamping die according to the grinding path. Therefore, the efficiency of the whole test lapping process is improved.

The invention relates to the technical field of semiconductor manufacturing, in particular to an accurate detection method and system for a flat-edge sheet wafer placement rotary chuck, and the method comprises the steps: when a wafer is placed on the rotary chuck, scanning the lap joint condition of a wafer edge and a chuck contact area through a laser sensor, and obtaining the real-time distribution data of an edge lap joint sheet; flat edge position information is extracted from the edge lap joint distribution data, an image matching algorithm is adopted to compare a preset orientation reference, and a specific angle value of orientation deviation is determined; according to the orientation deviation angle value and the edge lapping piece distribution data, the rotating speed and the angle of the rotating chuck are adjusted through a cooperative control algorithm, and a final positioning result of the wafer on the chuck is obtained; after a final positioning result is obtained, the in-place state of the wafer is classified and judged through a deep learning model, and whether the residual deviation or wafer lapping phenomenon exists or not is determined; and extracting abnormal data from a classification judgment result, and adjusting collaborative parameters of carrying and placing according to the abnormal data to obtain an optimized process control scheme.

The invention discloses a cellular structure of a shield gate trench MOSFET and a manufacturing method thereof, the cellular structure of the shield gate trench MOSFET comprises a substrate, a drift region and an interlayer dielectric layer, the drift region is provided with a deep trench, and the deep trench is internally provided with a shield gate, an intermediate oxide layer and a control gate; a body region and a source region are formed at the upper part of the drift region through injection, the interlayer dielectric is provided with a source electrode contact hole which penetrates through the source region and extends into the body region, and highly doped contact regions are formed on the side wall and the bottom of the source electrode contact hole through injection; and a charge balance region is formed below the source electrode contact hole through high-energy ion implantation. According to the invention, by arranging the charge balance region, the lateral depletion of the shield gate to the adjacent drift region can be enhanced when the shield gate trench MOSFET device is in a reverse bias state, the specific on-resistance of the device is reduced, the depletion of the drift region of the epitaxial layer is accelerated, and the reliability and radiation resistance of the device are improved.

The invention provides a full-focusing ultrasonic imaging method for multi-modal damage of a composite material, and the method comprises the steps: calculating the correlation of the reflection intensity of a sound wave signal at different moments and spatial positions through employing an established quantitative corresponding relation, recognizing a close contact region and a loose separation region between a bonding layer and a substrate, and carrying out the recognition of the close contact region and the loose separation region. Judging the continuity distribution condition of the interface contact state; according to the continuous distribution condition of the interface contact state, key feature points of dynamic damage evolution are extracted, a time sequence analysis method is adopted to track the feature points to adapt to damage features of dynamic changes, and prediction data of the damage expansion trend are obtained; and according to the dynamic representation result of the interface state, fusing the obtained multi-period signal characteristic data, carrying out quantitative calculation on the area change of the debonding region, judging the residual distribution state of the bonding strength, and obtaining a comprehensive evaluation report of the damage degree of the bonding interface.

The invention provides a grid-controlled junction field effect transistor, which comprises a substrate and an epitaxial layer formed on the substrate, the channel region of the second doping type is formed downwards from the top surface of the epitaxial layer; the second doping type source electrode contact region is formed downwards from the top surface of the epitaxial layer and is connected to the outer edge of the channel region; the grid electrode of the first doping type is formed on the channel region in the vertical direction, and the outer edge of the grid electrode is located in the outer edge of the channel region in the transverse direction, so that a preset distance is kept between the grid electrode and the source electrode contact region of the second doping type in the transverse direction; and the well region is positioned below the second doping type source contact region. According to the invention, the technical problem that the input capacitance and grid leakage of a traditional grid-controlled junction field effect transistor are relatively large is solved.

The invention provides a method for automatically measuring the thickness of an oxide layer on the surface of an aluminum profile, and the method comprises the steps: scanning a hanging tool contact region on the surface of the aluminum profile, obtaining an aluminum profile surface image, carrying out the edge contour recognition of the aluminum profile surface image, determining the coordinate position of a hanging tool contact point, and obtaining a contact point region range; dynamically adjusting a measurement probe avoidance path according to the boundary coordinates of the uncertain measurement area, generating a measurement track bypassing the uncertain measurement area, and determining a compensation measurement point position sequence according to the boundary of the effective measurement area and the uncertain measurement area; the measuring probe is guided to execute thickness scanning in the effective measuring area through the compensation measuring point position sequence, the oxide layer thickness value of each measuring point is obtained through scanning, and an oxide layer thickness data set is formed; and generating a final oxide layer thickness evaluation report according to the corrected thickness value and the effective measurement area range, and fusing the boundary coordinates of the uncertain measurement area and the oxide layer thickness distribution characteristics to determine the surface oxide layer thickness of the aluminum profile.

The invention relates to a cooling device for cooling an electrical and / or electronic assembly (2), said cooling device comprising: a top plate (3) and a bottom plate (4), the bottom plate (4) being a deep-drawn component having a depression (40), the top plate (3) and the bottom plate (4) being arranged such that, due to the depression (40) a cooling channel (5) is formed between the top plate (3) and the bottom plate (4), the top plate (3) and the bottom plate (4) being connected to one another at a contact region (8) outside the depression (40), it being possible for a cooling fluid flow of a cooling fluid to flow through the cooling channel (5) along the longitudinal direction (11), the cooling device (1) also comprising at least one turbulator (6) that is arranged inside a turbulator section (56) of the cooling channel (5). According to the invention, a turbulence portion (61) for generating local turbulence in the flow of the cooling fluid and a blocking region (62) for locally blocking the flow of the cooling fluid are formed on the turbulator (6).

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

A rotor assembly for an electric machine, having a rotor shaft rotateable about an axis of rotation, a rotor body. The rotor shaft is arranged coaxially in a receiving opening of the rotor body and is connected to the rotor body for conjoint rotation, a plurality of spacing regions distributed around the circumference about the axis of rotation between an outer circumference of the rotor shaft and an inner circumference of the receiving opening, and contact regions, the rotor shaft and the rotor body spaced apart from one another in the spacing regions and in contact with one another in the contact regions, wherein each of the spacing regions is divided into an inlet channel and an outlet channel which are fluidically interconnected on a first axial rotor end face via a deflection region and fluidically separated from one another on a second axial rotor end face in a connection region.

The invention relates to an out-ear audio device comprising a bone conductor transducer (1) configured to transfer an audio signal by means of bone conduction to an ear of a user, the device comprising a housing (2) accommodating the bone conductor transducer (1), the device further comprising holding means (3) configured to releasably attach the housing (2) to the tragus of the user, wherein:the holding means (3) together with a portion (4) of the outer surface of the housing (2) of the audio device forms a substantially U-shaped structure, where the holding means (3) comprises a contact member (10, 28) formed for contact with an inner surface of the tragus that faces towards the head of the user; andwherein a contact region that is formed for contact with an outer surface of the tragus corresponding to said inner surface of the tragus is provided by a portion (4) of the housing (2), which portion (4) is in vibrational contact with the bone conduction transducer (1), such that vibrations generated by the bone conductor transducer (1) is transmitted to the contact region;where the contact member and the contact region form a gap (27) between the contact member (10, 28) and the contact region (4); andwherein the holding means (3) is displaceably or pivotally connected to the bone conductor transducer (1) either directly or via the housing (2), such that the distance between the contact member (10) and contact region (4) can be varied, andwherein the housing (2) and / or the holding means (3) is provided with biasing means, such as a spring member 5, 6, 7; 15, 18), that is configured to force the contact member (10, 28) and the contact region (4) against each other, whereby the contact member (10, 28) and the contact region (4), respectively, presses against said inner and outer surfaces of the tragus, when the audio device is provided on the tragus.

This application discloses an optical module housing and a manufacturing method thereof, an optical module, and an optical communication device. The optical module housing includes a housing body and a plating layer, where the plating layer is located on a surface of the housing body, a roughness Ra of the plating layer at least in a contact area does not exceed 0.6 μm, and the contact area is an area that is of the optical module housing and that is configured to be in contact with a heat sink. According to this application, the roughness Ra of the plating layer in the contact area is set not to exceed 0.6 μm, so that when the optical module is connected to an optical module connector, a gap between the contact area of the optical module housing and the heat sink is smaller.

An example of a controller according to an exemplary embodiment includes a housing including an opening, an input device including a movable member penetrating through the opening in a first direction to inside of the housing, and a contact area that is provided inside the housing. The movable member is configured to be able to be pressed and tilted relative to an axis in the first direction. When the movable member is tilted, the movable member comes into contact with the contact area and is restricted from being further tilted. The contact area is inclined to face the movable member relative to a plane perpendicular to the axis in the first direction.

The invention provides a semiconductor and a manufacturing method thereof. The semiconductor device comprises a semiconductor substrate; an epitaxial layer disposed on the substrate; a plurality of trenches formed in the epitaxial layer; a shielding insulating layer formed inside the plurality of grooves; a shield electrode surrounded by the shield insulating layer and disposed inside the plurality of trenches; an inter-electrode insulating layer formed on top of the shield insulating layer and the shield electrode; a gate insulating layer disposed on the inter-electrode insulating layer; a gate electrode disposed on the gate insulating layer; a body region formed on an upper portion of the epitaxial layer between the plurality of trenches; a source region formed on the body region; an interlayer insulating layer formed on the gate electrode and the source region; and a body contact region in contact with the source region and the body region.

The invention relates to the technical field of semiconductors, in particular to a source heterojunction contact semiconductor structure and device and a manufacturing method, the semiconductor structure comprises a gate structure, a body region structure, a source structure and a drain structure, and the source structure comprises a polycrystalline silicon source contact layer; the semiconductor structure comprises a body region structure and a polycrystalline silicon source contact layer, the body region structure is surrounded by the gate structure, a source contact region is arranged in the body region structure, the polycrystalline silicon source contact layer is in contact with the source structure through the source contact region so as to form a heterojunction diode with the source structure, and the heterojunction diode is a freewheeling diode of the semiconductor structure. The drain electrode structure is located on one side, back to the gate electrode structure, of the body region structure; the semiconductor structure can be a SiC MOSFET structure, reverse conduction voltage drop during follow current of the SiC MOSFET can be greatly reduced, and conduction loss and loss caused during switching are reduced.

Pixel circuits may be symmetrically arranged with respect to a boundary between neighboring pixels. Neighboring pixels may have pixel circuits which are symmetric to each other and may share at least one transistor and at least one contact area. Accordingly, a high-resolution display apparatus is provided which may be implemented by increasing integration efficiency of a pixel circuit and increasing pixel density.

The invention discloses a semiconductor device and a manufacturing method thereof, and electronic equipment, and belongs to the technical field of semiconductors, and the semiconductor device comprises a plurality of layers of storage units which are stacked in the direction perpendicular to a substrate; the memory cell includes: a transistor; the transistor comprises a grid electrode extending in the direction perpendicular to a substrate, a semiconductor layer surrounding the side wall of the grid electrode, and a transition layer surrounding the side wall of the semiconductor layer and making contact with the semiconductor layer. Wherein the transition layer comprises two conductive contact areas which are isolated from each other, and two insulating areas which are positioned between the two conductive contact areas.

A semiconductor device includes a trench in a substrate, a gate electrode in the trench, a source contact region on a first surface of the substrate, a drain contact region on a second surface of the substrate, a heavily doped region directly below the trench, and a current spreading layer in the substrate to surround the bottom of the trench and the heavily doped region. The heavily doped region has a first conductivity type, and the width of the heavily doped region is smaller than the width of the trench in a first direction. The current spreading layer has a second conductivity type and a gradual doping concentration that is gradually increased along the first direction from the heavily doped region to the outside of the current spreading layer.

The present invention relates to a contact (70) for a flat plug connector (50), and a flat plug connector (50) for a flat plug connector system (1), wherein the flat plug connector (50) has at least one contact (70) according to the contact (70) for a flat plug connector, andwherein the contact (70) has a terminal portion (71) for electrically conductive connection to an electronic component;wherein the contact (70) has a retaining portion (73) for fixing in a plug connector housing (51);wherein the contact (70) has a contact portion for electrically conductively contacting a complementary contact (34),wherein the contact portion is connected to the retaining portion (73) by means of a bent portion (74) of the contact (70),wherein the contact portion has a bent contact region (76) for electrically conductively contacting a complementary contact (34),wherein the contact portion has a first portion (75) which is arranged between the bent contact region (76) and the retaining portion (73), wherein the first portion (75) and the retaining portion (73) enclose an acute angle, andwherein the contact portion has a second portion (77) which is arranged opposite the first portion (75) relative to the bent contact region (76), and wherein the second portion (77) has a support portion (78) which is configured to be supported at the retaining portion (73) by the support portion (78) upon deflection of the contact portion towards the retaining portion (73).

The invention relates to an indirect rear viewing system for a motor vehicle having a supporting element for fastening at least one reflective element, wherein the supporting element has a coupling region for a position variable fastening / attachment to an adjusting element, which in turn can be attached to the vehicle, wherein the coupling region contacts a counter contact regions, of the adjusting element, wherein interlocking anti rotation means are present on the supporting element and on the adjusting element, wherein the anti rotation means are forming an index geometry, which, in a first operating state, permits an adjustment of the supporting element relative to the adjusting element about two axes of rotation, which are transverse to one another, and, in at least a second operating state, permits a basic position change of the supporting element relative to the adjusting element about a third axis of rotation which is aligned transversely to the two other axes of rotation.

The invention relates to a solar cell, a preparation method thereof and a photovoltaic module. The solar cell comprises a semiconductor substrate which is provided with a first surface and a second surface which are opposite to each other, the first surface is provided with a first doped region and a second doped region which are arranged in a staggered mode, the second doped region comprises a contact region and isolation regions located on the two sides of the contact region, and the isolation regions are connected with the first doped region; the first doped layer is positioned in the first doped region; the first isolation layer is located in the isolation region; the second doping layer at least covers the contact region and one side, deviating from the semiconductor substrate, of the first isolation layer; the conduction type of the second doping layer is opposite to that of the first doping layer; and a first electrode and a second electrode, the first electrode being in electrical contact with the first doped layer, and the second electrode being in electrical contact with the second doped layer located in the contact region. The isolation effect can be improved.

An electric machine having a rotor assembly with a hollow shaft rotatable about a rotational axis and a rotor element. The rotor element is coaxial to the hollow shaft and rotates with the hollow shaft. Contact and spacing regions are formed in the circumferential direction between the outer circumference of the hollow shaft and the inner circumference of the rotor element. The rotor element is arranged to contact the hollow shaft in the contact regions and be at a distance in the spacing regions. A conducting tube is arranged in a cavity of the hollow shaft coaxial to the hollow shaft and to the rotor element. The cooling fluid can flow out of the conducting tube along a first flow path and along a second flow path to cool the components of the electric machine.

The invention relates to a plug connector component (7) for a multi-part plug connector (8), having - a connection interface (10) for connecting to at least one other compatible plug connector component (9) of the multi-part plug connector (8); - a primary contact region (15) for forming at least part of a primary plug interface (16) for connecting to a corresponding mating plug connector (3, 3') of the multi-part plug connector (8); - a connection region (13) for connecting at least one electrical conductor (6); and - at least one electrical contact element (11), which can be connected to the electrical conductor (6) in the connection region (13) and which extends from the connection region (13) at least into the connection interface (10), the electrical contact element (11) being connectable to a compatible electrical contact element (12) of the compatible plug connector component (9) in the connection interface (10).

Integrated circuit structures that significantly reduce the resistance associated with the body contact region and substrate region contact of a field-effect transistor (FET) compared to conventional designs. Embodiments include a FET having a body contact region, and optionally a substrate region contact, that includes germanium (Ge) alone or as an alloy with silicon (SiGe) and / or as a layered combination with silicon (e.g., a layer of Ge on a layer of Si). A first method includes fabricating a body contact region of a field-effect transistor by fabricating the field-effect transistor with an Si body contact region, and diffusing or implanting Ge within the Si. A second method includes fabricating a body contact region of a field-effect transistor by fabricating the field-effect transistor with an Si body contact region, etching away at least part of the Si body contact region to form a well, and depositing Ge within the well.

The invention provides a multi-axis linkage rotating laser processing control method, device and equipment and a storage medium, and the method comprises the steps: generating laser-workpiece contact area entity data according to entity data of a target workpiece and current motion data of multi-axis linkage rotating laser equipment, and carrying out two-dimensional image projection and function conversion on the data, and obtaining a laser-workpiece contact window function. And then, correcting the preset ideal laser energy density distribution based on the contact window function to obtain effective laser energy density distribution. And according to the effective distribution, processing parameters of the multi-axis linkage rotating laser equipment are subjected to collaborative optimization, parameter adjusting instructions are generated, and the equipment is controlled through the instructions to carry out precise processing on the target workpiece. According to the entity data of the workpiece and the motion data of the equipment, the laser energy density distribution is corrected in real time, and the machining parameters are dynamically optimized, so that the machining precision and efficiency are improved, and the high-precision machining requirement of the complex workpiece is met.

A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.

The invention relates to a cooling device for cooling an electrical and / or electronic assembly (2), said cooling device comprising: a top plate (3) and a bottom plate (4), the bottom plate (4) being a deep-drawn component comprising a depression (40), the top plate (3) and the bottom plate (4) being arranged such that, due to the depression (40), a cooling channel (5) is formed between the top plate (3) and the bottom plate (4), the top plate (3) and the bottom plate (4) being connected to one another at a contact region (8) outside the depression (40), it being possible for a cooling fluid flow of a cooling fluid to flow through the cooling channel (5), the cooling device (1) further comprising at least one turbulator (6) arranged inside the depression (40) of the cooling channel (5), the turbulator (6) adjoining a bottom surface (44) in the depression (40) of the bottom plate (4) and the bottom surface (44) facing the top plate (3). According to the invention, the bottom plate (4) comprises an embossment (7) in a bending region (43) on the edge of the bottom surface (44).

The invention discloses a semiconductor device which comprises a cellular structure, and the cellular structure comprises an N + substrate, an N-drift layer and a functional area. The N-drift layer is located on the N + substrate; the functional region is embedded into one side, away from the N + substrate, of the N-drift layer, the functional region comprises two subunits and a second N + source region, and each subunit comprises a P + contact region, a P-type body region, a first N + source region and a first trench gate structure; the first N + source region is located on the P-type body region, the first groove is located between the P-type body region and the P + contact region, the first gate oxide layer covers the inner wall of the first groove, a first filling groove is formed in the inner wall of the first gate oxide layer, the first gate is filled in the first filling groove, and the P + shielding region of the P + contact region covers the bottom of the first gate oxide layer; and a second N + source region is arranged between the first trench gate structures of the two subunits. According to the device, the effective utilization rate of a channel can be improved, the specific on-resistance is further reduced, and the problem of long reverse recovery time is solved.

A busbar assembly for installation in a battery for a motor vehicle, comprising a housing in which at least one busbar is arranged, and a retainer for fixing the busbar in the housing, where the retainer comprises a retaining region and a contact region, wherein the retaining region is adapted to retain the at least one busbar, and the contact region is adapted to fix the retainer in the housing.