1503results about "Charge supports" patented technology

A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

Methods and apparatuses to improve the temperature uniformity of a workpiece being processed on a heated platen of a thermal processing station. A heated platen is enclosed in a housing incorporating an additional heat source that uniformly outputs thermal energy into the process chamber in which the heated platen is positioned. In preferred embodiments, this heat source is positioned in the lid of the housing. It is additionally preferred that the heated lid includes features that provide a gas flow path to introduce to and / or purge gas from the process chamber. In terms of photoresist performance, the improved thermal uniformity provided by using such an additional heat source in the housing, e.g., in the lid, offers improved line width control and line uniformity across a wafer.

A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.

A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.

The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The present invention is directed to a wafer support tool for heat treatment comprising: a plurality of wafer support members for supporting a wafer to be heat treated; and a support member holder for holding the wafer support members, wherein the wafer support members each has a contact portion with the wafer, at least one of the contact portions being movable relative to the support member holder.

A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.

A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.

A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough.

A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.

Implementations described herein provide a pixilated substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a heating assembly. The pixilated substrate support assembly comprises an upper surface and a lower surface; one or more main resistive heaters disposed in the pixilated substrate support; and a plurality of pixel heaters in column with the main resistive heaters and disposed in the substrate support. A quantity of the pixel heaters is an order of magnitude greater than a quantity of the main resistive heaters and the pixel heaters are independently controllable relative to each other as well as the main resistive heater.

A temperature measurement apparatus for measuring a temperature profile of a substrate mounted on a rotating table, including a radiation temperature measurement unit configured to measure the temperature of plural temperature measurement areas on a surface of the rotating table in a radius direction of the rotating table by scanning the surface of the rotating table in the radius direction; a temperature map generating unit that specifies the address of the temperature measurement area based on the number of the temperature measurement areas measured by the radiation temperature measurement unit for each of the scanning operations in the radius direction of the rotating table, and the rotating speed of the rotating table, and stores the temperature in correspondence with the corresponding address in a storing unit; and a temperature data display processing unit that displays a temperature profile of the rotating table.

A gas injector tube usable in a batch thermal treatment oven including two silicon shells joined together with an adhesive formed of a fine silicon powder and a curable silica-forming agent, such as a spin-on glass, which is ultrasonically homogenized. The tube may have a gas outlet on its distal end or be sealed with a silicon cap and have side outlet holes formed along its side. The silicon injector tube may be used in combination with a silicon tower and a silicon liner so that all bulk parts within the furnace hot zone are formed of silicon.

A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).

A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

A heat treatment apparatus includes a support sheet placed on an upper surface of a heat-treating plate. The support sheet has, formed on an upper surface thereof, projections for contacting and supporting a substrate, and a lip for contacting edge regions of the substrate. The support sheet is formed by an etching process, and therefore areas of the sheet around the projections are recessed, rather than being perforated as in the case of laser processing. These heat-treating plate and support sheet constitute a substrate support structure capable of supporting the substrate properly.

A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

A jig for firing ceramics, which is used by being piled up in multiple stages upon firing a ceramic formed body, of the present invention has a through hole and / or a cut-out portion formed in a portion thereof.

An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.

Methods and devices for thermal processing of multiple samples at the same time are disclosed. The sample processing devices provide process arrays that include conduits useful in distributing sample materials to a group pf process chambers located in fluid communication with the main conduits. The sample processing devices may include one or more of the following features in various combinations: deformable seals, process chambers connected to the main conduit by feeder conduits exiting the main conduit at offset locations, U-shaped loading chambers, and a combination of melt bonded and adhesively bonded areas.

Devices, systems, and methods for processing sample materials. The sample materials may be located in a plurality of process chambers in the device, which is rotated during heating of the sample materials.

A degreasing jig according to the present invention is a degreasing jig for degreasing of a ceramic molded body containing a ceramic powder, a binder, and a dispersion medium, comprising a bottom plate for placing the ceramic molded body thereon, and an air-permeable cover member provided in a manner to cover the ceramic molded body.

PCT No. PCT / JP97 / 00526 Sec. 371 Date Aug. 31, 1998 Sec. 102(e) Date Aug. 31, 1998 PCT Filed Feb. 25, 1997 PCT Pub. No. WO97 / 32339 PCT Pub. Date Sep. 4, 1997An heat-treating ring boat (20) for semiconductor wafers (W) has a top plate (21), a bottom plate (22), six columns (23-28), and 63 ring trays (31). The trays (31) are mounted in grooves (20a) of the columns (23-28). To fix the trays (31), a fixing rod (33) is detachably mounted between the top plate (21) and bottom plate (22). A through hole (21a) and a recessed portion (22a) to mount the fixing rod (33) therein are formed in the top plate (21) and bottom plate (22). Notches (34) to engage with the fixing rod (33) are formed in the trays (31). A notch (32) to engage with the fixing rod (33) is formed in the column (23). A projection (41) is formed on each tray (31) to abut against the side surface of the column (24).

A firing jig for a honeycomb molded body includes a housing body configured to place a pillar-shaped honeycomb molded body including silicon carbide as a main component with a side face of the honeycomb molded body facing down, and a coat layer formed on at least a placing face of the housing body configured to place the honeycomb molded body thereon. A main component of the coat layer is silicon carbide, the coat layer having an arithmetic average height Ra of about 10 μm or less obtained in conformity with JIS B 0601 (2001).

A manufacturing method of a honeycomb structured body including a honeycomb fired body of the present invention comprises: fabricating a pillar-shaped honeycomb molded body having a large number of cells longitudinally placed in parallel with one another with a cell wall there between by molding a ceramic raw material, and firing of the honeycomb molded body, wherein the manufacturing method further includes removing of extraneous matters adhered to a surface of the honeycomb fired body after the honeycomb molded body has been fired.