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21222 results about "Gas supply" patented technology

Film deposition apparatus and film deposition method

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms

A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

Ceramic heater system and substrate processing apparatus having the same installed therein

A ceramic heater system has a ceramic heater base having a substrate-mounting surface formed on the top surface thereof and a heater, buried in the heater base, for heating a substrate. A fluid passage is formed buried in the heater base below where the heater is buried. The heater base is cooled as a fluid whose temperature is lower than the temperature of the heater base is let flow in the fluid passage. A substrate processing apparatus has the ceramic heater system installed in a process chamber whose vacuum state can be maintained, a gas supply mechanism for feeding a gas into the process chamber, and a power supply. The substrate processing apparatus performs a heat treatment, etching and film deposition on a substrate placed in the process chamber.

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

Method and apparatus for treating article to be treated

A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2; and a second gas supply pipe 14 for carrying hydrogen gas into the reaction tube 2. Oxygen gas and hydrogen gas are supplied through the first gas supply pipe 13 and the second gas supply pipe 14, respectively, into the reaction tube 2, and the heater 12 heats the reaction tube 2 at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube 2 and thereby the organic substances adhering to the wafers 10 are oxidized, decomposed and removed.

Method for forming thin film

Method for forming a thin film at low temperature by using plasma pulses is disclosed. While a purge gas or a reactant purge gas activated by plasma is continuously supplied into a reactor, a source gas is supplied intermittently into the reactor during which period plasma is generated in the reactor so that the source gas and the purge gas activated by plasma reacts, so that a thin film is formed according to the method. Also, a method for forming a thin layer of film containing a plural of metallic elements, a method for forming a thin metallic film containing varied contents by amount of the metallic elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , and a method for forming a thin film containing continuously varying compositions of the constituent elements by using a supercycle Tsupercycle comprising a combination of simple gas supply cycles Tcycle, . . . , are disclosed. The methods for forming thin films disclosed here allows to shorten the purge cycle duration even if the reactivity between the source gases is high, to reduce the contaminants caused by the gas remaining in the reactor, to form a thin film at low temperature even if the reactivity between the source gases is low, and also to increase the rate of thin film formation.

Film deposition apparatus

A film deposition apparatus including a rotational member is rotated by a rotation mechanism around a vertical axis inside a chamber, a pedestal in the chamber and including substrate receiving areas formed along a circle having the vertical axis as a center, and first and second reaction gas supplying parts provided separately along a circumferential direction of the circle and supplying first and second reaction gases to the pedestal, a separating area in the rotational member and between first and second process areas to which first and second reaction gases are supplied, an evacuation port to evacuate an atmosphere inside the chamber, a separation gas supplying part in the separating area for supplying a separation gas, and an opposing surface part in the separating area on both sides of the separation gas supplying part and at a position forming a thin space between the opposing surface part and the pedestal.

Plasma processing apparatus

In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

Plasma processing apparatus, plasma processing method, and tray

A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.

Plasma processing system

A processing system having a processing chamber that includes a substrate holder and an electrode. The processing system can include a pressure control system, gas supply system, and monitoring system. A multi-frequency RF source is coupled to the electrode using a reduced-element matching network having a single variable element. The multi-frequency RF source is set to a first frequency to ignite a plasma and to a second frequency to maintain the plasma.

High density plasma chemical vapor deposition apparatus

A high density plasma chemical vapor deposition apparatus includes an upper gas supply nozzle which includes a nozzle body, a gas supply passage formed vertically in the nozzle body, a nozzle cover attached to a lower surface of the horizontal portion of the nozzle body, and a plurality of gas inlets formed through the nozzle cover to uniformly supply the processing gas towards a semiconductor wafer within the processing chamber.

Method and apparatus for substrate temperature control

A method and apparatus for gas control is provided. The apparatus may be used for controlling gases delivered to a chamber, controlling the chamber pressure, controlling the delivery of backside gas between a substrate and substrate support and the like. In one embodiment, an apparatus for controlling gas control includes at least a first flow sensor having a control valve, a first pressure sensor and at least a second pressure sensor. An inlet of the first flow sensor is adapted for coupling to a gas supply. A control valve is coupled to an outlet of the flow sensor. The first pressure sensor is adapted to sense a metric indicative of the pressure upstream of the first flow sensor. The second pressure sensor is adapted to sense a metric indicative of the pressure downstream of the control valve.
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