21253 results about "Gas supply" patented technology

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.