43 results about "Source material" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

A deposition system includes a deposition source and a scan stage disposed within a deposition path of the deposition source. The scan stage includes a support platform configured to support a wafer thereon and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform relative to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scan stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scan stage, the controller configured to control the mechanical actuator to translate the wafer relative to the slit such that a deposition angle remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is not aligned with the slit from contacting the wafer.

The method for forming an electrode according to an exemplary embodiment includes a shielding pattern formation process, a loading process, and a conductive layer formation process. In the shielding pattern formation process, a shielding pattern is formed on a surface of a substrate using a shielding material to expose a localized area of ​​that surface. The shielding material is a polymer comprising ends having at least one bond structure having covalent and double bonds. In the loading process, the substrate on which the shielding pattern is formed is loaded into a chamber. In the conductive layer formation process, a copper-containing source material and a reactive material reacting with the source material are alternately sprayed into the chamber using atomic layer deposition to form a copper-containing conductive layer on the exposed surface of the substrate. Therefore, according to the method for forming an electrode according to the exemplary embodiment, a thin film made of the material used to form the electrode is not formed on the surface of the shielding pattern. No residue is left when the shielding pattern is removed, preventing defects caused by residue.

A method for producing silicon carbide, SiC, epitaxial wafers in a wafer growth system (1) comprising an outer container, an insulating container arranged inside the outer container, a growth container (2) arranged inside the insulating container, and a heating arrangement arranged outside the outer container to heat an inside of the growth container (2). The method comprises providing a source material (3) of polycrystalline SiC in the growth container (2), providing a substrate (4) of monocrystalline SiC in the growth container (2) substantially parallel to the source material (3), the substrate (4) having a doping concentration of ≤5—1016 cm−3, increasing the temperature in the growth container (2) to a sublimation temperature of the source material (3), maintaining the temperature in the growth container (2) until a conductive layer (6) of monocrystalline SiC having a thickness of ≥10 μm and having a doping concentration of ≥1·1018 cm−3 has grown on the substrate (4). The substrate (4) and the grown conductive layer (6) together define an epitaxial boule. The method further comprises cooling the epitaxial boule to room temperature, and slicing the epitaxial boule, through the substrate (4) in a plane substantially parallel to the grown conductive layer (6), into an excess substrate (8) and an epitaxial wafer comprising a substrate layer (7) having the grown conductive layer (6) thereon.

This application relates to the technical field of lithium-ion batteries, and discloses a method for preparing a composite carbon-coated anode material and a lithium-ion battery. The preparation method includes the following steps: adding a carbon source material containing carboxylic acid, a nitrogen source material containing amino groups, and a phosphorus source material containing phosphate groups to a solvent and mixing them evenly to obtain a precursor solution; adding graphite to the precursor solution and mixing it evenly; subjecting the resulting slurry to rotary evaporation to remove the solvent, and then vacuum drying at 100-120°C to obtain a primary material; heating the primary material under inert gas conditions, first raising it to 250-260°C and holding it for 60-70 min; then raising it to 550-600°C and holding it for 120-140 min; finally raising it to 900-950°C and holding it for 60-70 min, and then cooling it in a furnace to obtain the anode material. The anode material obtained in this application, when used in lithium-ion batteries, has the advantages of high initial coulombic efficiency and long cycle stability.

The application relates to the field of material data processing and discloses a cross-source material data semantic alignment method and device, a complete technical path from multi-source material data collection, semantic feature extraction, semantic embedding representation, object entity alignment, attribute alignment to relationship organization is constructed, the method and device can face multi-source heterogeneous material data such as literature, experiments, calculation and industrial production, fully combine semantic representation learning and intelligent analysis capability, realize unified semantic modeling and alignment at the attribute layer and the relationship layer, further eliminate the semantic gap between cross-source data, realize unified semantic modeling and standardized expression of cross-source material data, and improve material data integration, organization, retrieval and reuse capability.

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

This method for manufacturing a solid electrolyte comprises the steps of: preparing a lithium source material, a phosphorus source material, and a halogen source material; mixing the lithium source material, the phosphorus source material, and the halogen source material by using a dry bead mill to form a mixture; and heat-treating the mixture to form a sulfide-based compound having an argyrodite crystal structure. By performing a mixing process using a dry bead mill, a simple process without solvent treatment is applied, and continuous production up to pulverization and classification processes is possible, thereby reducing process costs while improving the quality of a sulfide-based solid electrolyte.

Provided is a system (100) for simultaneously producing a first and a second epitaxial monocrystalline layer on a respective first and second substrate, comprising a first inner container (3) defining a first cavity for accommodating a first source material and the first substrate, a second inner container (4) defining a second cavity for accommodating a second source material and the second substrate, an insulation container (6) arranged to accommodate the first and second inner containers (3, 4) therein, an outer container (7) arranged to accommodate the insulation container (6) and the first and second inner containers (3, 4) therein and heating means (8) arranged outside the outer container (7) and configured to heat the first and second cavities simultaneously.

The present application relates to the production line material scheduling technical field, especially to a kind of double-source material dynamic priority scheduling method based on production line station state driving, comprising the following steps: S1, real-time acquisition production line each station's working state signal, double-source material's inventory state and availability signal, conveying equipment's task state signal;S2, based on station's working state signal quantitative evaluation station state, in combination with double-source material's inventory state and availability, conveying equipment's task state, dynamically calculate each station from double-source material supply source obtains the distribution priority of material;S3, according to distribution priority generation global optimal task execution sequence, issues scheduling instruction to corresponding execution unit;S4, receives the task execution feedback signal of execution unit, updates system state and triggers new round of scheduling decision.The present application can solve the staticity, local optimization and response lag problem of existing scheduling method.

Aspects of the present disclosure relate to efficiently trapping ions for QIP systems. A system may include an ablation laser beam source and an ion trapping structure including: an enclosure with an orifice, a source material that is arranged in the enclosure and receives an ablation laser pulse to provide a plume of atoms. A system may include at least one LED that is arranged in the enclosure and onto which at least a portion of the plume of atoms is deposited, wherein the at least one LED is configured to emit light that desorbs at least one deposited atom through the orifice. A system may include an ion trap with a gap through which the at least one deposited atom desorbed travels from the orifice, and a laser beam source configured to generate a laser beam towards the at least one deposited atom creating a trapped ion.

This application provides a method, device, medium, and program product for identifying change risks, relating to the field of software release and maintenance technology. The method includes: in the process of identifying change risks, performing structured analysis on multi-source material data based on a risk analysis model and according to the first analysis prompt, extracting a change analysis summary that can characterize the semantics of the change, which can comprehensively and accurately capture change risks at different levels, and recalling corresponding risk knowledge items from the risk knowledge base based on the change analysis summary, greatly expanding the coverage and benchmark of risk knowledge, and further performing correlation reasoning through the risk analysis model, reasoning based on the change content and historical knowledge (i.e., risk knowledge items, etc.), generating a more accurate risk judgment that is more in line with the specific change, effectively improving the accuracy of risk identification.

The invention relates to a protective device (10) for a coating system (100), said coating system (100) comprising a recipient (110) having a reaction volume (114) enclosed by a wall (112) of the recipient (110) for receiving a source arrangement (120) having one or more source materials (122) and a substrate arrangement (130) having one or more substrates (132), wherein, by irradiating laser light (300) onto at least one of the one or more source materials (122), at least one of the one or more substrates (132) can be coated using the corresponding source material (122). The invention also relates to a coating system (100) having such a protective device.

The application belongs to the technical field of electric power warehousing, and discloses a multi-source material demand prediction and replenishment decision method for electric power warehousing, wherein a cross-system dynamic federal query system is constructed, an OPC UA protocol and a RESTful API fusion gateway are adopted, seamless docking of multiple systems such as electric power warehousing, power grid monitoring and weather warning is realized, data is standardized into a four-dimensional structure of materials, time, scene and attributes, and then implicit space-time correlation is completed through a space-time enhanced knowledge graph to form a standardized fusion data set; a hybrid prediction model combining migration learning is constructed, small sample scenes are adapted through similar scene data migration, and differentiated sub-models are designed for regular consumption materials and emergency materials, combined with time series trend decomposition and attention mechanism to strengthen the influence of key scenes; meanwhile, an adaptive data cleaning module and an automatic feature extraction mechanism are adopted, abnormal data is removed through double verification, missing values are intelligently completed, and core features are dynamically screened.

A method, computer program product, and computing system for: receiving a request from a user to use grounding material in a generative AI system; establishing a network connection with trusted-source material to allow access to the trusted-source material; processing the grounding material to confirm the integrity of the grounding material; and allowing the grounding material to be utilized in the generative AI system if the integrity of the grounding material is confirmed.

This application provides a grasping control method, device, medium, product, and grasping control system. Responding to grasping control commands, based on a 3D image of the space inside the source material box acquired by a 3D vision system, the robotic arm is controlled to grasp materials from the source material box and transfer them to a pallet. Once the pallet is full, the robotic arm unloads the materials into the target material box, and the grasping operation continues. When the source material box is empty, the roles of the source and target material boxes are switched, and the above processing flow continues. This method automatically switches the roles of the source and target material boxes when the source material box is empty, turning a material box that was originally a feeder into a material receiver, and vice versa. This solves the problem of traditional transfer methods that can only operate in one direction and require manual intervention when the source box is empty, thus achieving bidirectional material transfer, effectively improving the flexibility of material transfer, and ensuring the continuity of material transfer operations between different material boxes.

A neutron flux detector comprising a source material and a solid state radiation detector is disclosed. The source material is configured to produce gamma photons greater than or equal to 6.8 MeV during neutron capture. The solid state radiation detector comprises a Schottky diode and an emitter layer comprising a Compton and photoelectron source material. The emitter layer is configured to receive the gamma photons produced by the source material. The emitter layer is spaced apart from the Schottky diode a distance such that a gap is defined between the emitter layer and the Schottky diode. The distance is selected such that only electrons produced by the emitter layer as a result of the emitter layer absorbing the gamma photons will contribute to a measured output signal of the Schottky diode.

Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and / or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.

This disclosure relates to a laser system for source material conditioning in an EUV light source. An apparatus and method are disclosed in which multiple (e.g., two or more) pulses from a single laser source, generated by a common laser source, are applied to the source material prior to the application of a master ionization pulse. When the source material is in a first position, a first pulse is directed toward the source material, and when the source material is in a second position, a second pulse is directed toward the source material.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The application discloses a kind of Te x Se 1‑x Controllable growth method of nanowire and its device application.The method is based on three-zone tube furnace structure, places Se source material in upstream low-temperature zone and controls its evaporation flux by setting flow-limiting cover plate with through-hole structure, places Te source material in middle-stream high-temperature zone for independent evaporation, and places substrate in downstream growth zone to realize nanowire growth.Under the action of inert gas carrier flow, Se vapor and Te vapor are transported to the growth zone and deposited on the substrate surface to realize the accurate control of two vapor partial pressures and fluxes by synergistic control of Se source temperature, Te source temperature and flow-limiting cover plate through-hole structure, so that Te x Se 1‑x Controllable adjustment of nanowire composition and morphology.The obtained nanowire has good single crystal structure and uniform element distribution.The field effect transistor constructed based on the nanowire shows excellent electrical performance, and the mobility can reach 93.6 cm² / V·s, and the on-off ratio reaches 10³-10⁴ order of magnitude.The method has the advantages of simple process, strong controllability and good repeatability, and can be applied to the field of high-performance electronic and optoelectronic devices.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

Provided is a method for depositing a metal thin film by atomic layer deposition (ALD) using an organometallic complex as a source material and without using radical species such as plasma and ozone, which have a possibility of deactivation. The method is an atomic layer deposition (ALD) method for metal thin films which includes: a process of supplying an organometallic complex having an aromatic anionic ligand and / or an alkyl ligand into a reaction chamber in which a substrate is installed; and a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber, the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.

A thin-film transistor can include: a body of source material; a source-channel interface at the body of source material; a drain; a gate; and a body of channel material disposed within an influence of the gate between the source and the drain. The body of channel material is adjacent to the source-channel interface and includes a channel metal oxide. The source-channel interface includes a majority of an oxide of a majority metal and a minority of an oxide of an oxide-stabilizing metal, where an oxide of the oxide-stabilizing metal has a greater hydrogen stability than an oxide of the majority metal. A method of manufacturing a thin-film transistor can include: forming a body of source material; forming a source-channel interface at the body of source material; forming a body of drain material; forming a body of channel material; and forming a body of gate material.