136 results about "Source material" patented technology

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.

Silicon carbide as a radioactive isotope energy source material, containing a single crystalline phase of a silicon carbide semiconductor structure in the form of a film, having n-type or p-type electrical conductivity for separating electron-hole pairs, comprising the elements: carbon isotope C 12 and additionally carbon isotope C 14 for converting its radiation energy into electrical energy, characterized in that the concentration of radioactive isotope C 14 in one of the n-type or p-type conductivity layers is from 5·10 17 to 10 20 cm ‑3 -3 14 , wherein the n-type or p-type conductivity silicon carbide layer is formed on the surface of a monocrystalline silicon substrate, the n-type or p-type conductivity silicon carbide layer with C 14 has a porous surface topography.

A deposition system includes a deposition source and a scan stage disposed within a deposition path of the deposition source. The scan stage includes a support platform configured to support a wafer thereon and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform relative to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scan stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scan stage, the controller configured to control the mechanical actuator to translate the wafer relative to the slit such that a deposition angle remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is not aligned with the slit from contacting the wafer.

A silicon carbide crystal growth sublimation system is provided. The system comprises a crucible, a seed holder, an insulation material at least partially surrounding the crucible, and a source material comprising silicon carbide contained within the crucible. At least a portion of the source material, crucible, seed holder, or insulation material is 3D printed from a 3D printing composition comprising a ceramic material and a binder.

Provided is a system (100) for simultaneously producing a first and a second epitaxial monocrystalline layer on a respective first and second substrate, comprising a first inner container (3) defining a first cavity for accommodating a first source material and the first substrate, a second inner container (4) defining a second cavity for accommodating a second source material and the second substrate, an insulation container (6) arranged to accommodate the first and second inner containers (3, 4) therein, an outer container (7) arranged to accommodate the insulation container (6) and the first and second inner containers (3, 4) therein and heating means (8) arranged outside the outer container (7) and configured to heat the first and second cavities simultaneously.

The method for forming an electrode according to an exemplary embodiment includes a shielding pattern formation process, a loading process, and a conductive layer formation process. In the shielding pattern formation process, a shielding pattern is formed on a surface of a substrate using a shielding material to expose a localized area of ​​that surface. The shielding material is a polymer comprising ends having at least one bond structure having covalent and double bonds. In the loading process, the substrate on which the shielding pattern is formed is loaded into a chamber. In the conductive layer formation process, a copper-containing source material and a reactive material reacting with the source material are alternately sprayed into the chamber using atomic layer deposition to form a copper-containing conductive layer on the exposed surface of the substrate. Therefore, according to the method for forming an electrode according to the exemplary embodiment, a thin film made of the material used to form the electrode is not formed on the surface of the shielding pattern. No residue is left when the shielding pattern is removed, preventing defects caused by residue.

A method for producing silicon carbide, SiC, epitaxial wafers in a wafer growth system (1) comprising an outer container, an insulating container arranged inside the outer container, a growth container (2) arranged inside the insulating container, and a heating arrangement arranged outside the outer container to heat an inside of the growth container (2). The method comprises providing a source material (3) of polycrystalline SiC in the growth container (2), providing a substrate (4) of monocrystalline SiC in the growth container (2) substantially parallel to the source material (3), the substrate (4) having a doping concentration of ≤5—1016 cm−3, increasing the temperature in the growth container (2) to a sublimation temperature of the source material (3), maintaining the temperature in the growth container (2) until a conductive layer (6) of monocrystalline SiC having a thickness of ≥10 μm and having a doping concentration of ≥1·1018 cm−3 has grown on the substrate (4). The substrate (4) and the grown conductive layer (6) together define an epitaxial boule. The method further comprises cooling the epitaxial boule to room temperature, and slicing the epitaxial boule, through the substrate (4) in a plane substantially parallel to the grown conductive layer (6), into an excess substrate (8) and an epitaxial wafer comprising a substrate layer (7) having the grown conductive layer (6) thereon.

An apparatus for process-safe production of single crystals includes a process chamber that is fillable with a process gas and that receives a heatable growth cell, a heating device for heating the growth cell, which is adapted to receive a source material and a seed, and a vessel at least radially enclosing the process chamber and comprising at least first and second segments. A related method is also disclosed.

This application relates to the technical field of lithium-ion batteries, and discloses a method for preparing a composite carbon-coated anode material and a lithium-ion battery. The preparation method includes the following steps: adding a carbon source material containing carboxylic acid, a nitrogen source material containing amino groups, and a phosphorus source material containing phosphate groups to a solvent and mixing them evenly to obtain a precursor solution; adding graphite to the precursor solution and mixing it evenly; subjecting the resulting slurry to rotary evaporation to remove the solvent, and then vacuum drying at 100-120°C to obtain a primary material; heating the primary material under inert gas conditions, first raising it to 250-260°C and holding it for 60-70 min; then raising it to 550-600°C and holding it for 120-140 min; finally raising it to 900-950°C and holding it for 60-70 min, and then cooling it in a furnace to obtain the anode material. The anode material obtained in this application, when used in lithium-ion batteries, has the advantages of high initial coulombic efficiency and long cycle stability.

The application relates to the field of material data processing and discloses a cross-source material data semantic alignment method and device, a complete technical path from multi-source material data collection, semantic feature extraction, semantic embedding representation, object entity alignment, attribute alignment to relationship organization is constructed, the method and device can face multi-source heterogeneous material data such as literature, experiments, calculation and industrial production, fully combine semantic representation learning and intelligent analysis capability, realize unified semantic modeling and alignment at the attribute layer and the relationship layer, further eliminate the semantic gap between cross-source data, realize unified semantic modeling and standardized expression of cross-source material data, and improve material data integration, organization, retrieval and reuse capability.

An example thin-film transistor includes a source, including a body of source material, and a drain spaced apart from the source, the drain including a body of drain material. The thin-film transistor further includes a structure of layers between the source and the drain. The structure of layers includes a layer of metal-oxide semiconductor channel material, a layer of dielectric material, and a layer of gate material. The source, the drain, and the structure of layers terminate at a common planar surface. During manufacture, planarization, such as etching or chemical mechanical polishing, is used to form the common planar surface.

The subject invention provides safe, environmentally-friendly, compositions and methods for extracting minerals and / or metals from rock, ore, tailings, and / or coal combustion wastes. More specifically, the subject invention provides for enhanced froth flotation, including direct flotation or reverse flotation, of rock, ore, tailings, and / or coal fly ash using a composition comprising one or more biosurfactants.

The invention discloses a source furnace control method and device. The control method of the source furnace comprises the steps that in the crucible heating process, the temperature of the end is controlled to rise to a first preset temperature; controlling the base part to be heated to a second preset temperature, wherein the second preset temperature is smaller than the first preset temperature. In the heating process of the crucible, the end part is controlled to be heated to the first preset temperature, and when the source material has the adhesion characteristic, the residual source material at the end part and the source material on the baffle plate can be evaporated before a new beam is provided at the base part of the crucible, so that the residual source material at the end part and on the baffle plate can be reduced; and the probability of baffle adhesion caused by source material residues on the baffle is reduced. And then the base part is controlled to be heated to the second preset temperature, so that the source furnace can provide the beam of the source material to the substrate of the material to be deposited, normal use of the source furnace is realized, the use reliability and the use stability of the source furnace can be improved, and meanwhile, the use efficiency of the source material can be improved.

The embodiment of the invention discloses a microwave plasma chemical vapor deposition system. The microwave plasma chemical vapor deposition system comprises a deposition cavity, a first gas supply pipeline and a first bypass cavity. Wherein a sample table is arranged in the deposition cavity; one end of the first bypass cavity is communicated with the deposition cavity, the other end of the first bypass cavity is communicated with the first gas supply pipeline, the first bypass cavity comprises a first main body part, a first temperature control assembly is arranged on the body wall of the first main body part, and a first source material placement area is arranged in the first main body part; during use, a heterogeneous substrate is placed on the sample table, a buffer source material is placed in the first source material placement area, and after vacuumizing, the buffer source material is decomposed into first atoms through mutual cooperation of the deposition cavity, the first gas supply pipeline and the first bypass cavity, and the first atoms are deposited on the surface of the heterogeneous substrate to form a buffer layer; and diamond is formed on the buffer layer. According to the scheme, the diamond quality can be improved.

The invention provides a metro foundation pit carbon emission calculation method and system. The metro foundation pit carbon emission calculation method comprises the steps that carbon emission factors are imported, and a carbon emission factor database is established; based on the database, performing Monte Carlo simulation on different source materials, mechanical machine teams and energy data of the same name to analyze the uncertainty and obtain a corresponding confidence interval; subway foundation pit engineering data are imported, and an engineering list is established; in the primitive analysis, each project is defined as different primitives, the carbon emission of each primitive is calculated by using a carbon emission calculation formula, and the uncertainty of the carbon emission is analyzed; and on the basis of an element carbon emission calculation formula, the carbon emission average value of the subway foundation pit and the confidence interval thereof are obtained. According to the method, the accuracy and reliability of carbon emission calculation can be effectively improved, and an important reference basis is provided for subway construction and related fields.

A transistor structure includes a first channel layer over a second channel layer, where the first and the second channel layers include monocrystalline silicon. An epitaxial source material is coupled to a first end of the first and second channel layers. An epitaxial drain material is coupled to a second end of the first and second channel layers, a gate electrode is between the epitaxial source material and the epitaxial drain material, and around the first channel layer and around the second channel layer. The transistor structure further includes a first gate dielectric layer between the gate electrode and each of the first channel layer and the second channel layer, where the first gate dielectric layer has a first dielectric constant. A second gate dielectric layer is between the first gate dielectric layer and the gate electrode, where the second gate dielectric layer has a second dielectric constant.

A method of manufacturing a functional label includes providing a source material having one or more label layers and performing a first printing process and thereby forming a print on the source material using a first printing device. The method further includes performing a first die cutting process and thereby forming a functional die cut in the source material using a first die cutting device. The method further includes performing a second printing process separate from the first printing process and thereby forming a digital print on the source material using a second printing device. The method further includes performing a second die-cutting operation separate from the first die cutting operation and thereby forming a format die-cut in the source material using a second die cutting device and thereby forming the functional label.

The application discloses a transition metal fluoride super ionic conductor dielectric film and a preparation method thereof. The super ionic conductor dielectric film is prepared by a thermal evaporation method from a transition metal fluoride super ionic conductor. The transition metal fluoride super ionic conductor is selected from scandium fluoride, yttrium fluoride, titanium fluoride, hafnium fluoride, manganese fluoride, ferrous fluoride and nickel fluoride. In the application, the source material of the transition metal fluoride is heated and evaporated into a gaseous state in an evaporation system by the thermal evaporation method. The gaseous fluoride is directly adhered to a substrate placed on the upper side of the source material and recrystallized, so that the thickness of the transition metal fluoride is controllable, the number of defects is controllable and the integration is very high. The super ionic transition metal fluoride dielectric material can show great potential in the design and manufacture of new functional devices.

This invention relates to a molecular beam epitaxy shutter and apparatus, and pertains to the field of epitaxial growth technology. In the molecular beam epitaxy shutter of this invention, the first and second blades of the shutter plate have an included angle, such that when the shutter plate blocks the furnace opening, the molecular beam stream and thermal radiation emitted from the furnace opening intersect the shutter plate at an angle. The molecular beam stream and thermal radiation are reflected by the shutter plate and fall outside the furnace, thus avoiding the problem that existing shutter structures cannot effectively prevent source material splashing and thermal reflection to the furnace opening, affecting the stability of epitaxial growth and the coating quality.

This invention discloses a thermal transistor based on a MEMS thermal bridge device. Its structure includes a silicon substrate and a silicon nitride support film. The silicon substrate has a hollow center with a source, drain, gate, and thermocouple suspended platforms. Source, drain, and gate suspended platforms house source, drain, and gate resistance temperature sensors for heating and temperature measurement, respectively. Thermocouple suspended platforms house a pair of thermocouple temperature sensors for temperature measurement. The thermal interface material and parts of the source, drain, and gate materials are also in contact with the upper surface of the thermocouple suspended platforms. The transistor material consists of source, drain, gate, and thermal interface materials, arranged in a T-shape. The left end of the source material is in contact with the upper surface of the source substrate, the right end of the drain material is in contact with the upper surface of the drain substrate, and the lower end of the gate material is in contact with the upper surface of the gate substrate.

This method for manufacturing a solid electrolyte comprises the steps of: preparing a lithium source material, a phosphorus source material, and a halogen source material; mixing the lithium source material, the phosphorus source material, and the halogen source material by using a dry bead mill to form a mixture; and heat-treating the mixture to form a sulfide-based compound having an argyrodite crystal structure. By performing a mixing process using a dry bead mill, a simple process without solvent treatment is applied, and continuous production up to pulverization and classification processes is possible, thereby reducing process costs while improving the quality of a sulfide-based solid electrolyte.

Provided is a system (100) for simultaneously producing a first and a second epitaxial monocrystalline layer on a respective first and second substrate, comprising a first inner container (3) defining a first cavity for accommodating a first source material and the first substrate, a second inner container (4) defining a second cavity for accommodating a second source material and the second substrate, an insulation container (6) arranged to accommodate the first and second inner containers (3, 4) therein, an outer container (7) arranged to accommodate the insulation container (6) and the first and second inner containers (3, 4) therein and heating means (8) arranged outside the outer container (7) and configured to heat the first and second cavities simultaneously.

The invention relates to a semiconductor diffusion donor source material, and provides a high-purity silicon donor source crystal growth film and application thereof. According to the preparation method, PVA, PVP, PVB, PVF, PAA, HPMC, PEO, PMMA and PAN organic film forming matrixes are cooperated with inorganic matters such as AlO, SiO, ZrO, TiO, SiN, AlN and h-BN, the organic film forming matrixes are compounded with a high-purity donor stock solution containing phosphorus / antimony / indium / arsenic, the self-made high-purity donor stock solution containing phosphorus, antimony, indium and arsenic is compounded with slurry, and the compact, uniform and thickness-controllable donor source crystal growth film is prepared by film forming processes such as coating or tape casting. The film can be used as a main diffusion source in a high-purity silicon wafer thermal diffusion process, and has the advantages of uniform doping, low sheet resistance and good junction depth consistency.

The present invention refers to a method for the production of at least or exactly one monocrystalline SiC solid (20), in particular wafer. The method according to the present invention comprises at least the steps: Providing a PVT reactor (100), wherein the PVT reactor (100) comprises a source material receiving section (118) and a SiC seed solid, in particular SiC seed wafer, holding device (122), Coupling a SiC seed solid (18) to the SiC seed solid holding device (122), wherein the SiC seed solid (18) has a diameter of at least 10cm, Positioning of a ring-shaped SiC source material complex (120) in the source material receiving section (118), wherein the ring-shaped SiC source material complex (120) is formed by one or multiple pieces (140, 142) of SiC source material, Generating gaseous SiC by subliming the SiC source material complex (120), Growing monocrystalline SiC (20) by depositing the gaseous SiC onto the SiC seed solid (18).