391 results about "Source material" patented technology

A large language model (LLM) is used to broaden a search for supporting material for a media project. The LLM is provided with contextual material from the media project and optional grounding material and generates a list of types of supporting material. The list is provided to a machine-learning-based encoder, which encodes the list items into embedding space vectors. A body of source material, which may multimodal, is also encoded into the embedding space. A search engine is used to locate items of source material having embedded space vectors closest to vectors corresponding to the list of types of supporting material. Located items are provided to a media editing application as suggested supporting material. The body of source material may include live external sources. A small language model fine-tuned with a training data set generated by a LLM may be used instead of the LLM.

Assemblies, apparatuses, and methods to extract or convey a material from a source of the material may include a vacuum generation and sound attenuation assembly and a material receiver to enhance conveyance the material from the source of the material. The vacuum generation and sound attenuation assembly may include a vacuum source positioned to cause a vacuum flow between the source of the material, the material receiver, and the vacuum generation and sound attenuation assembly. The vacuum generation and sound attenuation assembly may further include a sound attenuation chamber positioned to receive at least a portion of the vacuum flow from, and attenuate sound generated by, the vacuum source. The material receiver may be positioned an elevated location relative to a source of the material and be capable of staging and metering the conveyance of material when moving material at the top of a structure, such as a refinery tower.

Disclosed herein are devices, systems, and methods for detecting, understanding, and classifying malicious actions and / or behaviors in software (e.g., malware), including hidden malicious actions. Specifically, disclosed embodiments use natural language approaches to understand malicious software and provide explanations for classification results. At least one embodiment constructs a knowledge graph that includes textual explanations from source materials (e.g., articles), collecting one or more sets of dynamic program traces from one or more instances of malware, and constructing and training a model (also referred to herein as Trace-BERT) using the one or more sets of dynamic program traces. Forced execution of sample segments of computer code can also be used to identify hidden or novel malicious actions.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention relates to an inorganic sodium ion solid electrolyte material screening method, system, equipment and medium, sodium-based inorganic compound data is extracted from an open source material database, and a candidate library is formed through preliminary screening; constructing a regression model by using training data of the dynamic solid electrolyte database, and optimizing and selecting an optimal machine learning model; inputting the preliminary candidate library into the model, and predicting and screening out a preliminary screening material of which the ionic conductivity is higher than a first threshold value; performing simulation calculation on the primarily screened material based on a first principle, simulating sodium ion diffusion tracks at different temperatures by using de novo molecular dynamics, calculating a diffusion coefficient, and extrapolating the diffusion coefficient to ionic conductivity at room temperature; and comparing the electrical conductivity predicted by machine learning and the electrical conductivity simulated by the first principle, and selecting a material of which the two electrical conductivity are both higher than a second threshold value and the migration energy barrier is relatively low as the optimal sodium ion solid electrolyte. Compared with the prior art, the method can efficiently and accurately screen out the high-performance sodium ion solid electrolyte material.

A method for edge passivation of crystalline silicon-based shingle cells, in which multiple crystalline silicon-based shingle cells are stacked to form a shingle cell group with cut edges thereof co-planar to form a to-be-passivated surface, and then the shingle cell group is placed in a fixing tooling to form a passivation unit. The passivation unit is conveyed by a conveying mechanism to an evaporation and annealing mechanism. A first source material is evaporated at 20-300° C. under vacuum in the evaporation and annealing mechanism to form a first gaseous source material, which is deposited on the to-be-passivated surface to form a first passivation layer. The shingle cell group with the first passivation layer is annealed at 100-350° C. A passivation device for implementing such method is further provided.

The invention provides a large-area coated lithium manganate positive electrode material and a preparation method thereof, and belongs to the technical field of energy materials, and the large-area coated lithium manganate positive electrode material comprises a lithium manganate positive electrode material body subjected to grain boundary pretreatment and a coating layer coating the surface of the lithium manganate positive electrode material body. The general molecular formula of the lithium manganate positive electrode material body subjected to grain boundary pretreatment is Li < 1 + a > Mn < 2-b > MbO4, M is a doping element, a is more than or equal to-0.1 and less than or equal to 0.3, and b is more than or equal to 0 and less than or equal to 0.3; the surface coating layer comprises an M'coating element. The lithium manganate positive electrode material body subjected to grain boundary pretreatment can realize large-area coating, and the lithium manganate positive electrode material subjected to special grain boundary pretreatment and large-area coating has excellent structural stability, so that corrosion of an electrolyte to lithium manganate is relieved, Mn dissolution at a high temperature is inhibited, and the lithium manganate positive electrode material has good electrochemical performance. Therefore, the lithium manganate positive electrode material has excellent high-temperature circulation and high-temperature storage performance, and the method is simple in process and can be implemented and popularized.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

An additive manufacturing system includes a first robotic arm and a print head with a nozzle. The first robotic arm is configured to hold a build part during a build process. The print head is configured to deposit source material layer by layer during the build process to construct the build part. The first robotic arm is configured to reorient the build part relative to the print head during the build process to modify an angle of a surface layer of the build part relative to the print head.

The application provides a negative electrode material and a preparation method thereof and a secondary battery, and relates to the technical field of battery materials. The negative electrode material comprises a silicon-based inner core and a carbon layer coated on the surface of the silicon-based inner core, wherein the silicon-based inner core comprises nanosilicon and a silicate containing a metal element M; the negative electrode material is subjected to section analysis and energy spectrum analysis, and meets the conditions of k1<=10, k2<=5 and 0.1 The preparation method of the negative electrode material comprises the following steps: heating and evaporating pre-disproportionated silicon monoxide material and M metal source material to obtain silicon monoxide gas and metal source gas; mixing and condensing the two kinds of gas to obtain an inner core material; and performing carbon coating treatment to obtain the negative electrode material. In the negative electrode material prepared by the application, the metal silicate effectively separates the nanosilicon domain and the silicon oxide domain, and is uniformly distributed, and the negative electrode material has high initial efficiency and excellent cycle performance.

The invention relates to a source arrangement (10) for a TLE system (100) for providing a source element (12) comprising or consisting of a source material (14) to be evaporated and / or sublimated by a laser beam (112), comprising a support (20) carrying said source element. Further, the invention relates to a TLE system (100) comprising a laser source (110) for providing a laser beam (112), a reaction chamber (120) for containing a reaction atmosphere (124), a source arrangement (10) for providing a source element (12) comprising or consisting of a source material (14) to be evaporated and / or sublimated by the laser beam (112) within the reaction chamber (120), and a substrate arrangement (130) for providing a substrate (132) to be coated within the reaction chamber (120) with the evaporated and / or sublimated source material (14). In addition, the invention relates to a method for using a TLE system (100), the TLE system (100) comprising a laser source (110) for providing a laser beam (112), a reaction chamber (120) for containing a reaction atmosphere (124), a source arrangement (10) for providing a source element (12) comprising or consisting of a source material (14) to be evaporated and / or sublimated by the laser beam (112) within the reaction chamber (120), and a substrate arrangement (130) for providing a substrate (132) to be coated within the reaction chamber (120) with the evaporated and / or sublimated source material (14).

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

The invention discloses a method for judging the source material allowance of an MBE source furnace based on the surface of an epitaxial wafer, and the method comprises the steps: selecting proper points on the surface of the epitaxial wafer, measuring the cycle, the half-peak width and the mismatch value of the surface of the epitaxial wafer through XRD, and respectively calculating the cycle, the half-peak width and the mismatch value of the epitaxial wafer through standard deviation; whether the source materials of the source furnace are insufficient or not is judged by designing a control group, an experience control group and an evidence group and comparing standard deviation ratios of the groups, and the allowance of the source materials of the molecular beam epitaxy source furnace is judged more rigorously. The method allows the sufficiency of the source material of the molecular beam epitaxy source furnace to be monitored in real time, and stable epitaxial wafer growth is ensured through XRD and data analysis. Compared with a traditional statistical method, the method is more accurate and scientific, resource waste is avoided, and the quality of the epitaxial material is improved.

The present invention relates to a method of forming a layer of a compound having a thickness selected in the range of a monolayer to several mm on a substrate, such as a single crystal wafer, the substrate being arranged in a process chamber comprising one or more sources of source material. The invention further relates to a compound optionally obtained by this method.

The application discloses a preparation method and application of a ferroelectric full water-splitting photocatalyst. The preparation method comprises the following steps: S1: pretreating a ferroelectric material to obtain a pretreated ferroelectric material; S2: after atomic layer deposition of the pretreated ferroelectric material and a metal organic complex source material, non-active gas I is introduced to perform blowing I, water is introduced, non-active gas II is introduced again to perform blowing II, and the first deposition is completed; and S3: according to the thickness of the ferroelectric full water-splitting photocatalyst, the step S2 is circularly performed to obtain the ferroelectric full water-splitting photocatalyst. The ferroelectric material can efficiently photocatalyze full water splitting through accurate regulation and modification of the surface of the ferroelectric material by the atomic layer deposition technology. The method not only provides an experimental basis for researching the limiting factors of the ferroelectric material in a photocatalytic reaction, but also provides a new idea for constructing an efficient photocatalyst by using efficient charge separation and depolarization electric field of the ferroelectric material.

The invention provides an SPH semi-implicit solving method for a landslide and debris flow movement process, and the method comprises the steps: generating a background grid and an SPH particle model of a landslide body or a debris flow body according to the information of a research region and an object source, and applying calculation parameters and boundary conditions; the method comprises the following steps: dividing a momentum conservation equation of a landslide body or a debris flow body into a pressure item, a gradient item and a source item, and carrying out explicit solution on the gradient item and the source item by adopting Runge-Kutta time integral to obtain an explicit speed increment; constructing a finite element solution format for the implicit velocity increment equation by adopting a Galerkin method, and solving to obtain an implicit velocity increment; and combining the explicit speed increment and the implicit speed increment to obtain the SPH particle speed value of the next time step.

To continue to seek improved SiC wafers with larger dimensions and related solid-state devices while overcoming challenges associated with conventional SiC wafers.SOLUTION: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.SELECTED DRAWING: Figure 1B

The invention discloses a preparation method and a structure of a novel electro-absorption modulated laser, and the method comprises the steps: symmetrically dividing a substrate into a double-end modulation region, a gain region, a grating region and a phase region, manufacturing a first mask pattern on the surface of the gain region, growing an active layer containing a quantum well structure in a mask gap through a selective region epitaxy technology, forbidden band red shift of the gain region is realized; manufacturing a mask covering the gain region and the modulation region, and etching a non-functional region to expose the substrate; a passive material with a wider band gap is grown in the exposed substrate area in a butt joint mode, and a photon limiting structure is formed; manufacturing a sampling grating through electron beam direct writing, growing a cladding layer and a contact layer, and etching an inverted table shallow ridge waveguide; and finally, etching an electrical isolation trench and manufacturing a double-sided electrode to complete device integration. Through the selective area epitaxial growth technology, active materials with two forbidden bandwidths of the gain area and the modulation area are achieved through one-time epitaxial growth, and a solution with extremely low cost is provided for the wavelength tunable electro-absorption modulated laser.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

According to some embodiments, an apparatus configured to release at least one substance from a source material is provided, the apparatus including: a housing; a plurality of source material segments positioned at fixed locations relative to the housing; a plurality of air flow paths, each air flow path associated with at least one source material segment, each air flow path associated with at least one blocking element that prevents air flow through the path; and an actuator operatively coupled to the blocking element, the actuator configured to unblock the air flow path of at least one selected source material segment to allow air flow to reach and pass through the source material within the selected segment.

The invention discloses a laser single crystal optical fiber doped with ions in a gradient manner and a preparation method of the laser single crystal optical fiber, when the single crystal optical fiber is prepared, firstly, raw materials with different doping concentrations are uniformly mixed respectively, then the raw materials are pressed into sheets respectively, the sheets are pressed for the second time to enhance compactness, then the pressed sheets are sintered to obtain a polycrystal material, and the polycrystal material is sintered to obtain the laser single crystal optical fiber doped with ions in a gradient manner. The preparation method comprises the following steps: respectively grinding a polycrystalline material until the polycrystalline material passes through a 400-mesh sieve, filling polycrystalline material powder into a strip balloon in a gradient segmentation manner, compacting and sealing, pressing and sintering to obtain a ceramic material rod, cutting the ceramic material rod into a ceramic square rod, and performing seeding growth by adopting a laser heating base method and taking the ceramic square rod as a source material rod to obtain the gradient ion-doped laser single crystal optical fiber. Compared with the prior art that the laser single crystal fiber doped with the ions in the gradient mode is prepared through a welding process, the method is low in process difficulty, welding interface diameter fluctuation does not need to be accurately controlled, the yield is high, the procedure is simple, and the production efficiency is high.

The present invention refers to a furnace apparatus comprising a furnace unit, wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface, at least one crucible unit, wherein the crucible unit is arranged inside the furnace housing, wherein the crucible unit comprises a crucible housing, wherein the crucible housing has an outer surface and an inner surface, wherein the inner surface at least partially defines a crucible volume, wherein a receiving space for receiving a source material is arranged or formed inside the crucible volume, wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume, at least one heating unit for heating the source material, wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit, characterized in that a position adjustment unit for adjustment of the position of the seed holder unit during operation of the furnace apparatus is provided, wherein the position adjustment unit is configured to increase the distance between the seed holder unit and the receiving space by moving the seed holder unit away from the receiving space.

The invention relates to the technical field of advertisement material auditing methods, in particular to an advertisement material auditing method and device and a storage medium, and the method specifically comprises the following steps: 1, carrying out the standardized collection of multi-source advertisement materials: firstly, carrying out the unified collection of the advertisement materials from different delivery platforms, the types of the collected materials comprise image materials, video materials, text materials and audio materials, and the materials in different formats are converted into a unified auditing input format by adopting a standardized processing algorithm; according to the method, through the seven steps of multi-source material standardized collection, multi-dimensional feature extraction, feature weight dynamic allocation, preliminary screening compliance judgment, secondary screening multi-modal fusion auditing, manual rechecking triggering and model iteration updating, compared with manual auditing, through machine automatic processing, the auditing efficiency is improved, and the corresponding comprehensive analysis ability is achieved.

Semiconductor devices are disclosed. A semiconductor device may include a hybrid transistor configured in a vertical orientation. The hybrid transistor may include a gate electrode, a drain material, a source material, and a channel material operatively coupled between the drain material and the source material. The source material and the drain material include a first material and the channel material includes a second, different material.

The invention provides a germanium-on-insulator structure and a preparation method thereof. The preparation method comprises the following steps: providing a silicon-based epitaxial germanium wafer; forming a dielectric layer on the surface of the epitaxial germanium layer of the silicon-based epitaxial germanium wafer; performing oxygen injection on the surface of the dielectric layer, and forming an oxygen injection layer at the junction of the silicon substrate of the silicon-based epitaxial germanium wafer and the epitaxial germanium layer; performing heat treatment on the silicon-based epitaxial germanium wafer, and forming a silicon oxide layer at the junction of the silicon substrate and the epitaxial germanium layer; and removing the dielectric layer to form the germanium-on-insulator structure. According to the invention, the silicon-based epitaxial germanium wafer is used as the source material of the germanium-on-insulator, and a wafer bonding step in a common SmartCut process is avoided, so that the problem of bubbles in the wafer bonding step is avoided. And compared with a bonding interface, the strength of an epitaxial growth interface is higher, and the reliability of a final product is better.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

Disclosed are a method of forming an oxide film including at least two non-oxygen elements, a method of manufacturing a semiconductor device, a method of forming a dielectric film, and a semiconductor device. The method of forming an oxide film including at least two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element; providing an electron donor compound to combine with the first source material; providing a second source material on the substrate after providing the electron donor compound, the second source material including a second central element; and providing an oxidizing agent on the substrate.

The invention relates to the technical field of lock parts and electromechanical materials, in particular to a lock part and electromechanical material full-process traceability material management device and method.The lock part and electromechanical material full-process traceability material management device comprises a supporting base, the top of the supporting base is fixedly connected with a conveying table, and the rear side of the top of the supporting base is fixedly connected with a labeling machine; a three-dimensional contour printing mechanism is fixedly connected to the right side of the top of the conveying table, a blocking mechanism is arranged at the bottom of the inner side of the three-dimensional contour printing mechanism, the three-dimensional contour printing mechanism comprises a printing frame, and a printing control assembly is fixedly connected to the top of the inner side of the printing frame. Through the arrangement of the conveying table, the labeling machine, the three-dimensional contour printing mechanism and the blocking mechanism, full-process traceability management of lock parts and electromechanical materials from warehousing, processing, warehouse-out to subsequent use is achieved, the materials are marked through the labeling machine, it is ensured that each material has a unique identity label, and then the materials are subjected to automatic identification. And the three-dimensional contour printing mechanism is used for carrying out accurate three-dimensional contour printing on the material.

The invention discloses a preparation method of a g-C3N4 / ZnO composite material capable of efficiently degrading tetracycline, and relates to the technical field of preparation of degraded tetracycline, and the preparation method comprises the following steps: preparing materials; uniformly mixing the graphene precursor, the zinc source material, the composite additive and the surface modifier; the mixture is subjected to a hydrothermal reaction, and a g-C3N4 / ZnO composite material is synthesized; and washing and drying the synthesized composite material to obtain the final g-C3N4 / ZnO composite material. The treated g-C3N4 / ZnO composite material is subjected to surface morphology and phase analysis, and it is ensured that the morphology and composition of the material meet the requirements. The specific surface area of g-C3N4 is increased by introducing the graphene precursor, the compounding effect of g-C3N4 and ZnO is enhanced, ZnO particles are synthesized by adopting a hydrothermal method, the photocatalytic activity is improved, efficient tetracycline degradation is achieved, the water treatment requirement is met, the manufacturing cost is reduced, and the method has industrial production potential and wide application prospects.