308 results about "Source material" patented technology

Disclosed herein are devices, systems, and methods for detecting, understanding, and classifying malicious actions and / or behaviors in software (e.g., malware), including hidden malicious actions. Specifically, disclosed embodiments use natural language approaches to understand malicious software and provide explanations for classification results. At least one embodiment constructs a knowledge graph that includes textual explanations from source materials (e.g., articles), collecting one or more sets of dynamic program traces from one or more instances of malware, and constructing and training a model (also referred to herein as Trace-BERT) using the one or more sets of dynamic program traces. Forced execution of sample segments of computer code can also be used to identify hidden or novel malicious actions.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention relates to an inorganic sodium ion solid electrolyte material screening method, system, equipment and medium, sodium-based inorganic compound data is extracted from an open source material database, and a candidate library is formed through preliminary screening; constructing a regression model by using training data of the dynamic solid electrolyte database, and optimizing and selecting an optimal machine learning model; inputting the preliminary candidate library into the model, and predicting and screening out a preliminary screening material of which the ionic conductivity is higher than a first threshold value; performing simulation calculation on the primarily screened material based on a first principle, simulating sodium ion diffusion tracks at different temperatures by using de novo molecular dynamics, calculating a diffusion coefficient, and extrapolating the diffusion coefficient to ionic conductivity at room temperature; and comparing the electrical conductivity predicted by machine learning and the electrical conductivity simulated by the first principle, and selecting a material of which the two electrical conductivity are both higher than a second threshold value and the migration energy barrier is relatively low as the optimal sodium ion solid electrolyte. Compared with the prior art, the method can efficiently and accurately screen out the high-performance sodium ion solid electrolyte material.

A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

The application provides a negative electrode material and a preparation method thereof and a secondary battery, and relates to the technical field of battery materials. The negative electrode material comprises a silicon-based inner core and a carbon layer coated on the surface of the silicon-based inner core, wherein the silicon-based inner core comprises nanosilicon and a silicate containing a metal element M; the negative electrode material is subjected to section analysis and energy spectrum analysis, and meets the conditions of k1<=10, k2<=5 and 0.1 The preparation method of the negative electrode material comprises the following steps: heating and evaporating pre-disproportionated silicon monoxide material and M metal source material to obtain silicon monoxide gas and metal source gas; mixing and condensing the two kinds of gas to obtain an inner core material; and performing carbon coating treatment to obtain the negative electrode material. In the negative electrode material prepared by the application, the metal silicate effectively separates the nanosilicon domain and the silicon oxide domain, and is uniformly distributed, and the negative electrode material has high initial efficiency and excellent cycle performance.

Crystal growth systems for growing crystalline material comprising silicon carbide are provided. In one example, the crystal growth system includes a crucible at least partially defining a crystal growth chamber. The crystal growth chamber has a plurality of zones, each zone associated with a different processing profile. The system includes a silicon carbide crystal. The system includes a source material.

The present invention relates to a method of forming a layer of a compound having a thickness selected in the range of a monolayer to several mm on a substrate, such as a single crystal wafer, the substrate being arranged in a process chamber comprising one or more sources of source material. The invention further relates to a compound optionally obtained by this method.

The application discloses a preparation method and application of a ferroelectric full water-splitting photocatalyst. The preparation method comprises the following steps: S1: pretreating a ferroelectric material to obtain a pretreated ferroelectric material; S2: after atomic layer deposition of the pretreated ferroelectric material and a metal organic complex source material, non-active gas I is introduced to perform blowing I, water is introduced, non-active gas II is introduced again to perform blowing II, and the first deposition is completed; and S3: according to the thickness of the ferroelectric full water-splitting photocatalyst, the step S2 is circularly performed to obtain the ferroelectric full water-splitting photocatalyst. The ferroelectric material can efficiently photocatalyze full water splitting through accurate regulation and modification of the surface of the ferroelectric material by the atomic layer deposition technology. The method not only provides an experimental basis for researching the limiting factors of the ferroelectric material in a photocatalytic reaction, but also provides a new idea for constructing an efficient photocatalyst by using efficient charge separation and depolarization electric field of the ferroelectric material.

The invention discloses a preparation method and a structure of a novel electro-absorption modulated laser, and the method comprises the steps: symmetrically dividing a substrate into a double-end modulation region, a gain region, a grating region and a phase region, manufacturing a first mask pattern on the surface of the gain region, growing an active layer containing a quantum well structure in a mask gap through a selective region epitaxy technology, forbidden band red shift of the gain region is realized; manufacturing a mask covering the gain region and the modulation region, and etching a non-functional region to expose the substrate; a passive material with a wider band gap is grown in the exposed substrate area in a butt joint mode, and a photon limiting structure is formed; manufacturing a sampling grating through electron beam direct writing, growing a cladding layer and a contact layer, and etching an inverted table shallow ridge waveguide; and finally, etching an electrical isolation trench and manufacturing a double-sided electrode to complete device integration. Through the selective area epitaxial growth technology, active materials with two forbidden bandwidths of the gain area and the modulation area are achieved through one-time epitaxial growth, and a solution with extremely low cost is provided for the wavelength tunable electro-absorption modulated laser.

Systems and methods for defect mitigation in silicon carbide crystal growth systems are provided. In an aspect, an example method includes providing a crystalline material in a first zone of the crystal growth chamber. In some implementations, the example method includes providing a silicon carbide vapor source material in a second zone of the crystal growth chamber. The example method includes providing an etching agent in the crystal growth chamber. The example method includes controlling a temperature gradient in the crystal growth chamber such that a first temperature in the first zone is greater than a second temperature in the second zone to implement an etching process on the crystalline material in the crystal growth chamber.

According to some embodiments, an apparatus configured to release at least one substance from a source material is provided, the apparatus including: a housing; a plurality of source material segments positioned at fixed locations relative to the housing; a plurality of air flow paths, each air flow path associated with at least one source material segment, each air flow path associated with at least one blocking element that prevents air flow through the path; and an actuator operatively coupled to the blocking element, the actuator configured to unblock the air flow path of at least one selected source material segment to allow air flow to reach and pass through the source material within the selected segment.

The invention discloses a laser single crystal optical fiber doped with ions in a gradient manner and a preparation method of the laser single crystal optical fiber, when the single crystal optical fiber is prepared, firstly, raw materials with different doping concentrations are uniformly mixed respectively, then the raw materials are pressed into sheets respectively, the sheets are pressed for the second time to enhance compactness, then the pressed sheets are sintered to obtain a polycrystal material, and the polycrystal material is sintered to obtain the laser single crystal optical fiber doped with ions in a gradient manner. The preparation method comprises the following steps: respectively grinding a polycrystalline material until the polycrystalline material passes through a 400-mesh sieve, filling polycrystalline material powder into a strip balloon in a gradient segmentation manner, compacting and sealing, pressing and sintering to obtain a ceramic material rod, cutting the ceramic material rod into a ceramic square rod, and performing seeding growth by adopting a laser heating base method and taking the ceramic square rod as a source material rod to obtain the gradient ion-doped laser single crystal optical fiber. Compared with the prior art that the laser single crystal fiber doped with the ions in the gradient mode is prepared through a welding process, the method is low in process difficulty, welding interface diameter fluctuation does not need to be accurately controlled, the yield is high, the procedure is simple, and the production efficiency is high.

The present invention refers to a furnace apparatus comprising a furnace unit, wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface, at least one crucible unit, wherein the crucible unit is arranged inside the furnace housing, wherein the crucible unit comprises a crucible housing, wherein the crucible housing has an outer surface and an inner surface, wherein the inner surface at least partially defines a crucible volume, wherein a receiving space for receiving a source material is arranged or formed inside the crucible volume, wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume, at least one heating unit for heating the source material, wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit, characterized in that a position adjustment unit for adjustment of the position of the seed holder unit during operation of the furnace apparatus is provided, wherein the position adjustment unit is configured to increase the distance between the seed holder unit and the receiving space by moving the seed holder unit away from the receiving space.

The invention relates to the technical field of advertisement material auditing methods, in particular to an advertisement material auditing method and device and a storage medium, and the method specifically comprises the following steps: 1, carrying out the standardized collection of multi-source advertisement materials: firstly, carrying out the unified collection of the advertisement materials from different delivery platforms, the types of the collected materials comprise image materials, video materials, text materials and audio materials, and the materials in different formats are converted into a unified auditing input format by adopting a standardized processing algorithm; according to the method, through the seven steps of multi-source material standardized collection, multi-dimensional feature extraction, feature weight dynamic allocation, preliminary screening compliance judgment, secondary screening multi-modal fusion auditing, manual rechecking triggering and model iteration updating, compared with manual auditing, through machine automatic processing, the auditing efficiency is improved, and the corresponding comprehensive analysis ability is achieved.

The invention provides a germanium-on-insulator structure and a preparation method thereof. The preparation method comprises the following steps: providing a silicon-based epitaxial germanium wafer; forming a dielectric layer on the surface of the epitaxial germanium layer of the silicon-based epitaxial germanium wafer; performing oxygen injection on the surface of the dielectric layer, and forming an oxygen injection layer at the junction of the silicon substrate of the silicon-based epitaxial germanium wafer and the epitaxial germanium layer; performing heat treatment on the silicon-based epitaxial germanium wafer, and forming a silicon oxide layer at the junction of the silicon substrate and the epitaxial germanium layer; and removing the dielectric layer to form the germanium-on-insulator structure. According to the invention, the silicon-based epitaxial germanium wafer is used as the source material of the germanium-on-insulator, and a wafer bonding step in a common SmartCut process is avoided, so that the problem of bubbles in the wafer bonding step is avoided. And compared with a bonding interface, the strength of an epitaxial growth interface is higher, and the reliability of a final product is better.

This invention relates to a method for remote epitaxial growth of single-crystal lead-free perovskite microsheets on germanium, comprising the following steps: using CsBr and SnBr2 as source materials placed in a reaction region, using argon as a carrier gas, placing germanium-based graphene in a deposition region, and then heating to react the source materials, followed by evaporation and deposition onto the germanium-based graphene to form single-crystal lead-free perovskite microsheets. The method of this invention can obtain perovskite microsheets with good orientation and is environmentally friendly. Furthermore, germanium is a mature semiconductor material with well-established wafer fabrication, cleaning, and surface treatment processes, making large-scale production possible and providing a new path for perovskite to move from the laboratory to high-performance, multifunctional integrated optoelectronic devices.

Disclosed are a method of forming an oxide film including at least two non-oxygen elements, a method of manufacturing a semiconductor device, a method of forming a dielectric film, and a semiconductor device. The method of forming an oxide film including at least two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element; providing an electron donor compound to combine with the first source material; providing a second source material on the substrate after providing the electron donor compound, the second source material including a second central element; and providing an oxidizing agent on the substrate.

The invention relates to the technical field of lock parts and electromechanical materials, in particular to a lock part and electromechanical material full-process traceability material management device and method.The lock part and electromechanical material full-process traceability material management device comprises a supporting base, the top of the supporting base is fixedly connected with a conveying table, and the rear side of the top of the supporting base is fixedly connected with a labeling machine; a three-dimensional contour printing mechanism is fixedly connected to the right side of the top of the conveying table, a blocking mechanism is arranged at the bottom of the inner side of the three-dimensional contour printing mechanism, the three-dimensional contour printing mechanism comprises a printing frame, and a printing control assembly is fixedly connected to the top of the inner side of the printing frame. Through the arrangement of the conveying table, the labeling machine, the three-dimensional contour printing mechanism and the blocking mechanism, full-process traceability management of lock parts and electromechanical materials from warehousing, processing, warehouse-out to subsequent use is achieved, the materials are marked through the labeling machine, it is ensured that each material has a unique identity label, and then the materials are subjected to automatic identification. And the three-dimensional contour printing mechanism is used for carrying out accurate three-dimensional contour printing on the material.

The invention discloses a preparation method of a g-C3N4 / ZnO composite material capable of efficiently degrading tetracycline, and relates to the technical field of preparation of degraded tetracycline, and the preparation method comprises the following steps: preparing materials; uniformly mixing the graphene precursor, the zinc source material, the composite additive and the surface modifier; the mixture is subjected to a hydrothermal reaction, and a g-C3N4 / ZnO composite material is synthesized; and washing and drying the synthesized composite material to obtain the final g-C3N4 / ZnO composite material. The treated g-C3N4 / ZnO composite material is subjected to surface morphology and phase analysis, and it is ensured that the morphology and composition of the material meet the requirements. The specific surface area of g-C3N4 is increased by introducing the graphene precursor, the compounding effect of g-C3N4 and ZnO is enhanced, ZnO particles are synthesized by adopting a hydrothermal method, the photocatalytic activity is improved, efficient tetracycline degradation is achieved, the water treatment requirement is met, the manufacturing cost is reduced, and the method has industrial production potential and wide application prospects.

An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.

The application discloses a multi-modal large model driven character knowledge graph construction method and system, relates to the field of knowledge graph modeling, and comprises the following steps: acquiring a target character name and multi-character attribute description information, and constructing a knowledge graph framework; acquiring corresponding target multi-source material data according to the target character name; for each character attribute description information, extracting at least one attribute matching material segment corresponding to the character attribute description information from the target multi-source material data, and performing fusion processing on each attribute matching material segment corresponding to the character attribute description information based on a multi-modal large model to output corresponding attribute multi-modal generation data; and filling each attribute multi-modal generation data into a corresponding attribute node in the knowledge graph framework according to the character attribute description information to construct a multi-modal character knowledge graph. Thus, a high-quality character knowledge graph generated by multi-modal data fusion is obtained through the driving of the multi-modal large model.

The invention provides a molecular beam rectifying device, a doping source furnace and a use method of the molecular beam rectifying device. The doping source furnace comprises a fixing device and a molecular beam rectifying device. The device comprises a crucible body and an insertion piece, the crucible body is used for containing a source material, and the insertion piece is used for being placed in the crucible body and can cover the whole cross section of the crucible body; a through hole is formed in the insertion piece, and the hole is used for allowing molecular beams formed by heating the source material to pass through. According to the device, the injection amount of the molecular beam can be adjusted through the holes in the insertion piece, so that the uniformity of the molecular beam at the outlet of the crucible body is improved, and the product yield is improved.

An engine identifying segments or portions of one source material or source file common to or found in another source material or file. The engine may receive a first data stream in binary form as well as a second stream in binary form. The engine may include a data stream processor or pre-processor programed to translate the first and second data streams to generate respective first and second processed data streams. The commonality between the first and second processed data streams may be greater than the commonality between the first and second data streams themselves. Also, a comparator may be programmed to compare the first and second process data streams and identify binary segments found in both the first and second processed data streams.

It is possible to selectively form a metal-containing film starting from a specific region on a substrate. There is provided a technique that includes: (a) forming an adsorption promoting layer capable of promoting an adsorption of an organic-containing agent on a substrate by supplying a halogen-containing agent to the substrate; (b) forming a modification layer on the substrate by supplying the organic-containing agent to the substrate; (c) supplying a source material containing a metal element to the substrate; (d) supplying a reactant to the substrate; and (e) forming a metal-containing film in a region of the substrate where the modification layer is not formed, by performing (b), (c) and (d) N times after (a).

The present invention belongs to the field of two-dimensional material preparation, and specifically relates to a method for preparing WS2-WSe2 lateral heterojunctions with different numbers of layers, wherein WSe2 powder is heat-treated at a temperature of 1150-1200°C; using the heat-treated WSe2 as the source material and the WS2 nanosheet as the substrate, a gas-variable deposition method is used to heat the source material to a volatilization temperature under a reverse carrier gas, and then change to a forward carrier gas, and the volatilized source material is laterally deposited on the edge of the WS2 nanosheet, and then the deposited product is quenched from the deposition temperature to room temperature to obtain the WS2-WSe2 lateral heterojunction; the direction of the reverse carrier gas refers to the direction from the substrate to the source material; the volatilization temperature is less than the heat treatment temperature, and the temperature difference is 10-25°C; the temperature of the lateral deposition is 800-950°C. In the present invention, through the combined control of the means and parameters, WSe2 can be synergistically induced to grow laterally at the edge of WS2, successfully preparing the lateral heterojunction, improving the boundary and smoothness, and realizing artificial control of the thickness of the lateral heterojunction nanosheet.

Evaporation arrangement (1) for an evaporation system designed for the evaporation of a mixture material consisting of at least two different evaporation source materials, comprising at least - a crucible (10) with an evaporation material storage volume (100), fillable with at least two different evaporation source materials, - at least one partition (11) arranged within the crucible (10) such that the evaporation material storage volume (100) is divided into at least two evaporation material storage subvolumes (101, 102) within the crucible (10), wherein each evaporation material storage subvolume (101, 102) is designed to accommodate one of the at least two different evaporation source materials, wherein an evaporation opening area of ​​each evaporation material storage subvolume (101, 102) corresponds to a desired ratio of the respective evaporation source material within the evaporated mixture, the evaporation properties of the respective evaporation source material and the evaporation parameters.

Silicon carbide as a radioactive isotope energy source material, containing a single crystalline phase of a silicon carbide semiconductor structure in the form of a film, having n-type or p-type electrical conductivity for separating electron-hole pairs, comprising the elements: carbon isotope C 12 and additionally carbon isotope C 14 for converting its radiation energy into electrical energy, characterized in that the concentration of radioactive isotope C 14 in one of the n-type or p-type conductivity layers is from 5·10 17 to 10 20 cm ‑3 -3 14 , wherein the n-type or p-type conductivity silicon carbide layer is formed on the surface of a monocrystalline silicon substrate, the n-type or p-type conductivity silicon carbide layer with C 14 has a porous surface topography.

A neutron flux detector comprising a source material and a solid state radiation detector is disclosed. The source material is configured to produce gamma photons greater than or equal to 6.8 MeV during neutron capture. The solid state radiation detector comprises a Schottky diode and an emitter layer comprising a Compton and photoelectron source material. The emitter layer is configured to receive the gamma photons produced by the source material. The emitter layer is spaced apart from the Schottky diode a distance such that a gap is defined between the emitter layer and the Schottky diode. The distance is selected such that only electrons produced by the emitter layer as a result of the emitter layer absorbing the gamma photons will contribute to a measured output signal of the Schottky diode.

A deposition system includes a deposition source and a scan stage disposed within a deposition path of the deposition source. The scan stage includes a support platform configured to support a wafer thereon and a mechanical actuator coupled to the support platform. The mechanical actuator is configured to translate the support platform relative to the deposition source. The deposition system includes a proximity mask disposed within the deposition path of the deposition source between the deposition source and the scan stage, the proximity mask defining a slit. The deposition system includes a controller in communication with the scan stage, the controller configured to control the mechanical actuator to translate the wafer relative to the slit such that a deposition angle remains substantially constant. In operation, the proximity mask prevents deposition source material having a trajectory that is not aligned with the slit from contacting the wafer.