1075results about How to "Uniform deposition" patented technology

High performance flow batteries, based on alkaline zinc/ferro-ferricyanide rechargeable (“ZnFe”) and similar flow batteries, may include one or more of the following improvements. First, the battery design has a cell stack comprising a low resistance positive electrode in at least one positive half cell and a low resistance negative electrode in at least one negative half cell, where the positive electrode and negative electrode resistances are selected for uniform high current density across a region of the cell stack. Second, a flow of electrolyte, such as zinc species in the ZnFe battery, with a high level of mixing through at least one negative half cell in a Zn deposition region proximate a deposition surface where the electrolyte close to the deposition surface has sufficiently high zinc concentration for deposition rates on the deposition surface that sustain the uniform high current density. The mixing in the flow may be induced by structures such as: conductive and non-conductive meshes; screens; ribbons; foam structures; arrays of cones, cylinders, or pyramids; and other arrangements of wires or tubes used solely or in combination with a planar electrode surface. Third, the zinc electrolyte has a high concentration and in some embodiments has a concentration greater than the equilibrium saturation concentration—the zinc electrolyte is super-saturated with Zn ions.

An assembly and method for delivering a reactant material onto a substrate is described and which includes a delivery member which has a first surface, and an opposite second surface, and wherein the second surface is positioned adjacent to a substrate, and wherein an elongated substantially continuous channel is formed in the second surface of the delivery member, and which is coupled in fluid flowing relation relative to a source of reactant material, and wherein the elongated substantially continuous channel delivers the reactant material onto the substrate.

A surface-enabled, metal ion-exchanging battery device comprising a cathode, an anode, a porous separator, and a metal ion-containing electrolyte, wherein the metal ion is selected from (A) non-Li alkali metals; (B) alkaline-earth metals; (C) transition metals; (D) other metals such as aluminum (Al); or (E) a combination thereof; and wherein at least one of the electrodes contains therein a metal ion source prior to the first charge or discharge cycle of the device and at least the cathode comprises a functional material or nano-structured material having a metal ion-capturing functional group or metal ion-storing surface in direct contact with said electrolyte, and wherein the operation of the battery device does not involve the introduction of oxygen from outside the device and does not involve the formation of a metal oxide, metal sulfide, metal selenide, metal telluride, metal hydroxide, or metal-halogen compound. This energy storage device has a power density significantly higher than that of a lithium-ion battery and an energy density dramatically higher than that of a supercapacitor.

A method and system for coating the internal surfaces of a workpiece is presented. A bias voltage is connected to a workpiece, which functions as a cathode. A gas source and a vacuum source are coupled to each opening through a flow control system. The flow control system is capable of a first mode which enables a first opening to function as a gas inlet and a second opening to function as a vacuum exhaust. The flow control system also has a second mode which enables a first opening to function as a vacuum exhaust and a second opening to function as a gas inlet. The cycling may also be used to coat internal surfaces of a workpiece with a single opening. Cycling the flow control system between the first mode and second mode is performed until a uniform coating along the internal surfaces of the workpiece is achieved.

The embodiments of the invention are directed to coatings and their uses. More particularly, the embodiments of the invention are directed to coating compositions that include silane-based precursors that are used to form coatings through a sol-gel process. The coatings so formed are characterized by anti-reflective, abrasion resistant, and anti-soiling properties. The coatings also have extended weatherability to heat, humidity, and protection against ambient corrosives. The coatings formed from the compositions described herein have wide application, including, for example, use as coatings on the outer glass of solar cells.

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surface. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the sane reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

A preloaded cathode layer, comprising: (A) An integral porous structure having massive surfaces greater than 100 m²/g or pores with a size from 1.0 nm to 100 nm, wherein multiple conductive particles, platelets or filaments, without a conductive filler, form a 3-D conductive network; and (B) a metal polysulfide preloaded in the pores or deposited on the massive surfaces, selected from: (a) an M_xS_y, (x=1-3 and y=1-10) wherein M is a metal element selected from a non-lithium alkali metal, an alkaline metal selected from Mg or Ca, a transition metal, a metal from groups 13 to 17, or a combination thereof, or (b) Li₂S₆, Li₂S₇, Li₂S₈, Li₂S₉, or Li₂S₁₀, wherein the metal polysulfide contains a thin coating or small particles with a thickness or diameter less than 20 nm and occupies a weight fraction of from 1% to 99%.

An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

An energy storage stack of at least two surface-mediated cells (SMCs) internally connected in parallel or in series. The stack includes: (A) At least two SMC cells, each consisting of (i) a cathode comprising a porous cathode current collector and a cathode active material; (ii) a porous anode current collector; and (iii) a porous separator disposed between the cathode and the anode; (B) A lithium-containing electrolyte in physical contact with all the electrodes, wherein the cathode active material has a specific surface area no less than 100 m²/g in direct physical contact with the electrolyte to receive lithium ions therefrom or to provide lithium ions thereto; and (C) A lithium source. This new-generation energy storage device exhibits the highest power densities of all energy storage devices, much higher than those of all the lithium ion batteries, lithium ion capacitors, and supercapacitors.

The invention provides a method for preparing an N-type crystalline silicon solar cell with aluminum-based local emitters on the back side. The method comprises the following steps: firstly, selecting N-type silicon wafers to carry out the surface-textured etching process; further forming a front surface field through phosphorous diffusion; depositing a passivating film on the front surface after the phosphorosilicate glass is formed during the removal of diffused phosphorous; carrying out the back-side chemical polishing process on the silicon wafers to remove the N+ layer formed on the back side during the phosphorous diffusion; then, sequentially printing an aluminum layer or a silver-aluminum layer through the passivating film deposited on the back side, local holes or grooves on the back side and screens on the back side; then, printing silver paste on the front surface; and finally, carrying out the one-step sintering process to form a local P+ layer on the back side and allowing the P+ layer to coming into ohmic contact with the electrodes on the front and back surfaces. By using the N-type substrate, forming local aluminum-based P-N junctions on the back side and further using the back-side chemical polishing process to remove the edge junctions, the invention can substitute for the conventional stacking-type plasma etching process, simplify the technological procedures and further bring a series of performance improvement to cells.

The invention provides a method for preparing a hydrogenation catalyst with high activation. A disposition method is adopted to carry out step-by-step loading to the active components of the metals of VIB and VIII families; the VIB metal comprises tungsten or molybdenum, while the VIII metal comprises nickel or cobalt; a carrier is alumina. The loading of VIB metal takes a corresponding soluble salt as raw material, an acid solution as a precipitator and a cationic surface active agent as a dispersant. In a hydrothermal condition, the corresponding soluble salt, the acid solution and the cationic surface active agent produce metallic oxide particles by a liquid deposition reaction; the loading of VIII metal also takes a corresponding soluble salt as raw material and carbamide as a precipitator; the adding of the precipitator and the generation of precipitation are separated by controlling reaction temperature in sections and even precipitation is realized to disperse the particles of the active components on the carrier evenly. The hydrogenation catalyst prepared shows good effects in the respects of desulfurization and denitrification activation and can greatly reduce the usage of the active components.

A rechargeable lithium-sulfur cell comprising a cathode, an anode, a separator electronically separating the two electrodes, a first electrolyte in contact with the cathode, and a second electrolyte in contact with the anode, wherein the first electrolyte contains a first concentration, C₁, of a first lithium salt dissolved in a first solvent when the first electrolyte is brought in contact with the cathode, and the second electrolyte contains a second concentration, C₂, of a second lithium salt dissolved in a second solvent when the second electrolyte is brought in contact with the anode, wherein C₁ is less than C₂. The cell exhibits an exceptionally high specific energy and a long cycle life.

A method of depositing a bond coating to a surface of an article includes the steps of depositing an inner layer of the bond coating consisting of β-NiAl comprising Fe, Ga, Mo, B, Hf or Zr or γ/β-MCrAlY comprising Fe, Ga, Mo, B, Hf or Zr or γ/γ′- or γ-MCrAlY, and depositing an outer layer of the bond coating, which is more coarse the in the inner layer, consisting of β-NiAl comprising Fe, Ga, Mo, B, Hf or Zr or γ/β-MCrAlY comprising Fe, Ga, Mo, B, Hf or Zr or γ/γ′- or γ-MCrAlY, wherein said elements Fe, Ga, Mo, B, Hf or Zr above mentioned are present individually or in combination. The coating also includes a noble metal selected from the group consisting of platinum, palladium and rhodium in the inner and outer layer or as a separate layer.

A head-box for depositing slurry upon a moving web including a main metering roll, a companion roll disposed in closely spaced relation to the metering roll and a vibrating gate which forms a nip between the metering roller and the gate. The nip is arranged to retain a supply of the slurry, and the rolls are driven so slurry retained in the nip progresses over an upper outer peripheral surface of the metering roll to be deposited upon the web. Also, preferably included is a doctor blade disposed in operational relationship to the metering roll for directing the slurry downwardly from the outer metering roll surface to a point above the surface of a carrier for a fiberglass layer upon which the slurry layer is deposited. The vibrating gate and doctor blade may be pivotally mounted to either side of the surfaces of the head-box.

The invention relates to a silicon-containing distillate oil hydrofining method, which adopts the method that the silicon-containing distillate oil raw material and hydrogen pass through at least two hydrofining catalyst beds under the hydrofining condition, the silicon-containing distillate oil raw material first passes through a hydrogenising catalyst bed with the silicon catching function, and then passes through a conventional hydrofining catalyst bed; wherein the hydrogenising catalyst with the silicon catching function has a greater pore volume and a specific surface area and a relatively lower metal content. Compared with the prior art, the method has the advantages that the process is simple, the good hydrodesulfurization and hydrodedenitrification performance is kept on the premise of enhancing the silicon-containing ability, and the running period of the device is effectively prolonged. The method can be applied to various silicon-containing distillate oil hydrofining processes.

One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

The invention discloses a self-heating type alcohol reforming hydrogen production micro channel reactor with the micro-lug boss array structure. Three layers of platy reaction carriers are all provided with micro-lug boss array structures; an upper layer and a lower layer are single-side micro-lug boss array structures; a middle layer is a double-side micro-lug boss array structure; the micro-lug bosses are arranged in the mode of parallel array; the three layers are cascaded to form a reaction channel with an inlet of 90 degrees; both ends of the channel are respectively provided with connector lugs; the gas inlet is provided with a detachable adapter and an outlet is provided with a fixed-type adapter. An upper layer channel is a catalytic reforming hydrogen production channel, and a lower layer channel is a combustion channel. The two layers of channel structures both adopt an open structural type being beneficial for the sediment of the catalytic coating. Fuel gases such as hydrogen and the like are combusted in the combustion channel and generate lot of heat which is transferred into the catalytic reforming hydrogen production channel by the middle layer of the reactor so as to meet the requirement of the steam reforming hydrogen production reaction; the reactor can produce hydrogen in a self-heating type. The invention increases the specific volume of the reactor and increases the yield of the alcohol reforming hydrogen production.